910 results about "Flow ratio" patented technology

A method of etching silicon-containing material is described and includes a SiConi™ etch having a greater or lesser flow ratio of hydrogen compared to fluorine than that found in the prior art. Modifying the flow rate ratios in this way has been found to reduce roughness of the post-etch surface and to reduce the difference in etch-rate between densely and sparsely patterned areas. Alternative means of reducing post-etch surface roughness include pulsing the flows of the precursors and/or the plasma power, maintaining a relatively high substrate temperature and performing the SiConi™ in multiple steps. Each of these approaches, either alone or in combination, serve to reduce the roughness of the etched surface by limiting solid residue grain size.

An implementing mode of the invention provides an improved technology for depositing materials containing tungsten. The technology utilizes an infusion technology and a gaseous phase deposition technology, such as atomic layer deposition (ALD), to provide tungsten-containing materials with obviously improved surface evenness and yield. In one implementing mode, a method for forming tungsten-containing materials on a substrate is provided. The method comprises deposing a substrate, which contains a bottom coating deposited thereon, in a technological chamber; exposing the substrate orderly in a precursor of tungsten and reducing gases so as to deposit a tungsten nucleation layer on the bottom coating, during the ALD technology; and depositing a tungsten block layer on the tungsten nucleation layer. The invention is characterized in that the reducing gases comprise a hydrogen gas/hydride flow ratio of 40:1, 100:1, 500:1, 800: 1, 1000:1 or more, and comprise hydride such as diborane, silicane or silicoethane.

The present invention provides a method for prioritizing packet flows within a switching network. The method includes the steps of receiving packets at an input port, stamping the packets with an arrival time, and classifying the packet into a flow, wherein the flow is determined based upon at least a class of service of the packet, assigning the packet to a queuing ring according to the flow of the packet, and maintaining a flow ratio pending within the switch based upon the classification of the packet.

An ejector cycle system with a refrigerant cycle through which refrigerant flows includes an ejector disposed downstream of a radiator, a first evaporator that evaporates refrigerant flowing out of the ejector, a throttling unit located in a branch passage and depressurizes refrigerant to adjust a flow rate of refrigerant, and a second evaporator located downstream of the throttling unit. In the ejector cycle system, a flow ratio adjusting means adjusts a flow ratio between a first refrigerant flow amount depressurized and expanded in a nozzle portion of the ejector and a second refrigerant flow amount drawn into a refrigerant suction port of the ejector, based on a physical quantity related to at least one of a state of refrigerant in the refrigerant cycle, a temperature of a space to be cooled by the first and second evaporators, and an ambient temperature of the space.

A multilayer, thermoplastic stretch wrap film containing at least three polymeric film layers and comprised of a first layer and a second layer. The first and second layers may comprise a polymer of two or more monomers, wherein a first monomer is ethylene, in a major amount by weight, and a second monomer is an alpha olefin of from about 3 to about 12 carbon atoms, in a minor amount by weight. If the first and second layers are outer layers, they have a cling force to each other of at least about 140 grams/inch. The stretch wrap film also has at least one inner polymeric layer, located between the first and second layers. The inner polymeric layer comprises a low polydispersity polymer having a polydispersity of from about 1 to about 4, a melt index (I.sub.2) of from about 0.5 to about 10 g/10 min., and a melt flow ratio (I.sub.20 /I.sub.2) of from about 12 to about 22. The inner layer(s) comprise(s) from about 5 wt. % to about 40 wt. % of the stretch wrap film so as to produce a film having a maximum stretch of at least 340%, a F-50 dart drop value of at least about 130 g/mil, a machine directional tear resistance of at least about 125 g/mil and a transverse directional tear resistance of at least about 500 g/mil. It is contemplated that additional outer layers may be added such an outer high cling layer or an outer slip layer, as well as additional inner layers.

The present invention generally comprises TFTs having semiconductor material comprising oxygen, nitrogen, and one or more element selected from the group consisting of zinc, tin, gallium, cadmium, and indium as the active channel. The semiconductor material may be used in bottom gate TFTs, top gate TFTs, and other types of TFTs. The TFTs may be patterned by etching to create both the channel and the metal electrodes. Then, the source-drain electrodes may be defined by dry etching using the semiconductor material as an etch stop layer. The active layer carrier concentration, mobility, and interface with other layers of the TFT can be tuned to predetermined values. The tuning may be accomplished by changing the nitrogen containing gas to oxygen containing gas flow ratio, annealing and/or plasma treating the deposited semiconductor film, or changing the concentration of aluminum doping.

Electronic packaging films, tapes, bags and pouches having excellent optical properties and heat sealability, low hexane extractables and a good balance of physical properties may be prepared from linear low density polyethylene having a melt flow ratio (I₂₁/I₂) from about 23 to about 32, prepared in a tandem dual reactor solution phase polymerization in the presence of a phosphinimine catalyst and a co-catalyst system which comprises an aluminum based co-catalyst, an ionic activator or a mixture thereof.

The invention discloses a coordination control method for a crossroad left-turning pre-signal and a straight-going successive signal, which comprises the steps that: a main signal lamp is arranged at first in the middle of a crossroad, left-turning pre-signal lamps are respectively arranged at first stop lines of four left-turning entrance lanes for left turning vehicles, straight-going successive signal lamps are respectively arranged in front of second stop lines of four exit lanes for straight-going vehicles; a main signal phase, a phase difference between the left-turning pre-signals and the straight-going successive signals, and a phase difference between the straight-going successive signals and the main signal are then configured, time allocation is prepared, the sum of key flow ratios of the phases is calculated, and the time for green light is finally allocated; according to the method disclosed by the invention, the contradiction in the aspect of time between the left-turning vehicles and the straight-going vehicles is thoroughly settled by means of the coordination control for the main signal, the pre-signals and the successive signals, thereby guaranteeing drive safety; the entire cycle for the coordination control only needs to be calculated once, which is fast and convenient, and the method effectively avoids that the adoption of traditional time allocation method is likely to lead to the jam of left-turning vehicles.

The invention discloses a method for predicting the influence of a heavy passenger flow of an urban rail transit network, which comprises the following step: (1) constructing an abstract model of the urban rail transit network; (2) generating a heavy passenger flow event; (3) setting the passenger flow ratio of a destination station/source station of a heavy passenger flow; and (4) analyzing the influence of the heavy passenger flow on the network. The method can be applied to the development of an urban rail transit network heavy passenger flow organization simulation system. The system can be used in an emergency handling center of the urban rail transit network to realize the automation and intellectualization of the analysis on the influence of the heavy passenger flow event and emergency handling. Meanwhile, the system is often used by an emergency handling department in a daily emergency monitoring process for simulating the handling process of the heavy passenger flow event anddeveloping the emergency handling capability of emergency handling personnel, and the system obtains good actual effect and enterprise benefit.

Ethylene copolymers having a relatively high melt flow ratio and a multimodal profile in a temperature rising elution fractionation (TREF) plot are disclosed. The copolymers can be made into film having good dart impact values and good stiffness properties under decreased extruder pressures.

The invention relates to a coal direct liquefaction method. It includes the following steps: mixing coal slurry which is made up of coal dust, hydrogenation cycle solvent, and iron catalyst with freshness or cycle hydrogen; reacting by the first and second reactor; sending the product from the second reactor to high temperature separator to separate; the weight flow ratio of the recycle and freshness materials is 2-20. The method can reduce hydrogen consumption and gas yield.

The invention which discloses a preparation method for metal/ceramic nanometer multilayer films with antibacterial and wear resistant surfaces relates to a preparation method for nanometer multilayer films and solves the problem of high cost and great difficulty in preparing wholly antibacterial materials and low wear resistance of surfaced treated antibacterial materials. The method comprises the following steps: a magnetron sputtering method is adopted, the background vacuum degree is 10<- 4> to 10<- 2> Pa; sputtering against targets in the conditions of the gas flow ratio of 2 to 17:1 of argon to one gas of the three gases of nitrogen, acetylene or methane, total air pressure of 0.1 - 1.0Pa, magnetron sputtering currents of 0.2 - 50A, voltage of 300 - 600V, substrate bias voltage of minus 50 to minus 400V and deposition temperatures of 80 - 400 DEG C. The nanometer ceramic/metal multilayer films prepared by the invention have good wear resistance and the antibacterial rate of more than 95 percent; the invention has the advantages of no pollution, low cost, easy realization and good industrial application prospects.

The disclosed ZnO impurity barrier layer and electrical isolation layer on metallic substrate is suitable to flexible photo-volt battery. Using pure zinc target or ZnO ceramics target etc, through sputtering technique, the invention deposits ZnO thin film on metal substrate. Adjusting flow ratio between Ar and O2 obtains ideal ZnO film. The ZnO film with compact structure of thin film possesses better effect for blocking off impurity inside metal substrate, and better effect of insulation. The disclosed ZnO is in use for preparing batteries and subassembly with flexible metal substrate.

An oxide and an oxynitride films and their methods of fabrication are described. The oxide or the oxynitride film is grown on a substrate that is placed in a deposition chamber. A silicon source gas (or a silicon source gas with a nitridation source gas) and an oxidation source gas are decomposed in the deposition chamber using a thermal energy source. A silicon oxide (or an oxynitride) film is formed above the substrate wherein total pressure for the deposition chamber is maintained in the range of 50 Torr to 350 Torr and wherein a flow ratio for the silicon source gas (or the silicon source gas with the nitridiation source gas) and the oxidation source gas is in the range of 1:50 to 1:10000 during a deposition process.

An information recording medium has an excellent jitter characteristic with a considerable difference in reflectance between prior to and subsequent to recording. The information recording medium includes a recording layer which contains a material having a reflectance which varies by irradiation of a light beam, on which information is recorded as reflectance variations, and a substrate for supporting the recording layer, the recording layer including a metal nitride as a major component. In a method of manufacturing the information recording medium having a recording layer which includes a material having a reflectance which varies by irradiation of a light beam, on which information is recorded as reflectance variations, and the substrate for supporting the recording layer, the recording layer including a metal nitride as a major component, the method includes a recording layer forming step for forming the recording layer by a reactive sputtering method which uses a target comprised of a metal constituting a metal nitride, wherein a flow ratio Ar:N₂ in an atmosphere including Ar and N₂ in the recording layer forming step is set within the range of 80:10 to 10:80.