Multiple precursor cyclical deposition system

Abstract

Embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing three or more precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap. One embodiment of depositing a ternary material layer over a substrate structure comprises providing at least one cycle of gases to deposit a ternary material layer. One cycle comprises introducing a pulse of a first precursor, introducing a pulse of a second precursor, and introducing a pulse of a third precursor in which the pulse of the second precursor and the pulse of the third precursor at least partially overlap. In one aspect, the ternary material layer includes, but is not limited to, tungsten boron silicon (WBxSiy), titanium silicon nitride (TiSixNy), tantalum silicon nitride (TaSixNy), silicon oxynitride (SiOxNy), and hafnium silicon oxide (HfSixOy). In one aspect, the composition of the ternary material layer may be tuned by changing the flow ratio of the second precursor to the third precursor between cycles.

Description

BACKGROUND OF THE INVENTION1. Field of the InventionEmbodiments of the present invention generally relate to an apparatus and method of deposition utilizing multiple precursors. More particularly, embodiments of the present invention relate to an apparatus and method of cyclical deposition utilizing multiple precursors in which delivery of at least two of the precursors to a substrate structure at least partially overlap.2. Description of the Related ArtReliably producing sub-micron and smaller features is one of the key technologies for the next generation of very large scale integration (VLSI) and ultra large scale integration (ULSI) of semiconductor devices. However, as the fringes of circuit technology are pressed, the shrinking dimensions of interconnects in VLSI and ULSI technology have placed additional demands on the processing capabilities. The multilevel interconnects that lie at the heart of this technology require precise processing of high aspect ratio features, such as...

AI Technical Summary

Benefits of technology

The present invention relates to a method and apparatus for depositing a layer of tungsten boron silicon, titanium silicon nitride, tantalum silicon nitride, silicon oxynitride, or hafnium silicon oxide over a substrate structure using three or more precursors. The method involves delivering at least two precursors to the substrate structure at least partially overlapping. The composition of the layer can be controlled by adjusting the flow ratio of the second precursor to the third precursor between cycles. The technical effect of this invention is to provide a more precise and controlled method for depositing ternary material layers over substrate structures.

Problems solved by technology

However, as the fringes of circuit technology are pressed, the shrinking dimensions of interconnects in VLSI and ULSI technology have placed additional demands on the processing capabilities.

Many traditional deposition processes have difficulty filling sub-micron structures where the aspect ratio exceeds 4:1.

Therefore, there is a great amount of ongoing effort being directed at the formation of substantially void-free and seam-free sub-micron features having high aspect ratios.

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