285 results about "Dielectric membrane" patented technology

The invention relates to a preparation method of a porous polyimide low-dielectric material. The method comprises the following specific steps: preparing a polyamide acid solution with a certain solid content under an ice-water bath condition; after the solution is recovered to normal temperature, adding a certain amount of sodium alginate, and after the solution is homogenized, adding a catalyst and a dehydrating agent for chemical imidization; the method comprises the following steps: coating a substrate medium with a solution after a certain time of reaction, standing in air for a certain time, sequentially and respectively placing the substrate medium in ethanol and a hot water bath for replacement for a certain time, airing at normal temperature, and transferring to a high-temperature oven for gradient cyclization to realize complete imidization. According to the method, conditions are mild and easy to control, and the low-dielectric film material which is flat in appearance and ordered in structure is prepared only through a normal-pressure drying method.

To provide a thin film capacitor having a pair of terminal electrodes capable of being disposed on the same plane. A thin film capacitor 1 includes a metal foil having a non-roughened center portion and a roughened upper surface, a dielectric film covering the roughened upper surface of the metal foil, an electrode layer contacting the non-roughened center portion of the metal foil through an opening formed in the dielectric film, and an electrode layer contacting the dielectric film without contacting the metal foil. A thickness of the center portion of the metal foil at a position overlapping the electrode layer is larger than a thickness thereof at a position overlapping the electrode layer.

An acoustic wave device includes a piezoelectric layer including lithium tantalate or lithium niobate, a dielectric film on the piezoelectric layer, the dielectric film including a dielectric material having a higher dielectric constant than that of the lithium tantalate or lithium niobate, and an IDT electrode on the dielectric film.

A trench capacitor manufacturing method is provided. The method includes forming a deep trench in a wafer, forming a trench capacitor structure including a plurality of dielectric films and a plurality of conductive layers in the deep trench; determining if the wafer has a tensile stress based on the forming of the trench capacitor structure; performing a high temperature heat treatment to the trench capacitor structure to change a form of the wafer to a direction that offsets the tensile stress; forming an inter-layer insulating film on the trench capacitor structure; and forming a metal interconnect on the inter-layer insulating film.

An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, a functional electrode on the piezoelectric layer, first and second electrode films on the piezoelectric layer, facing each other, and having different electric potentials from each other, and a dielectric film between at least one of at least a portion of the first electrode film and the piezoelectric layer and at least a portion of the second electrode film and the piezoelectric layer.

A semiconductor structure including a dielectric film wherein stress has been inducted into one or more stressed portions of the dielectric film to create one or more stress zones. The stress zones correspond to locations of warpage in the semiconductor structure and reduce warpage. In some examples, the stress zones can be created by exposing portions of the dielectric film to different amounts of heat. In some examples, the stress zones can be created by one or more recesses in the dielectric film.

A capacitor that includes a substrate having a surface; a lower electrode opposing the surface of the substrate; a dielectric film on the lower electrode; an upper electrode on the dielectric film; a protective layer on the lower electrode, the dielectric film, and the upper electrode, the protective layer defining a through-hole exposing at least one of the lower electrode and the upper electrode; at least one protrusion in the through-hole; and an outer electrode covering the through-hole and the at least one protrusion.

A plasma processing apparatus including a processing chamber and a cylindrical sample stage disposed within the processing chamber and having an upper surface on which the wafer is placed, the sample stage including a disc-like substrate; a dielectric film covering an upper surface of the substrate; and a heater layer disposed inside the dielectric film. The heater layer includes a plurality of film heaters disposed in a plurality of rectangular regions each disposed with one side of the rectangular shapes facing to adjacent regions. A cylindrical power supply connector detachable from a bottom of the substrate is configured to be electrically connected to each of the plurality of film heaters, and a wiring component includes a plurality of lines and is made of a resin-made plate-like component connected to a bottom of the power supply connector, and has an arm part extending along a bottom surface of the substrate.

The invention discloses a coplanar parallel capacitance-piezoelectric multi-mode tactile sensor and a preparation method thereof. The coplanar parallel capacitance-piezoelectric multi-mode tactile sensor comprises a substrate, a lower electrode, a middle functional layer, an upper electrode and a packaging protection layer which are sequentially arranged from bottom to top, the middle functional layer is a high-molecular polyvinylidene fluoride (PVDF) polymer film layer; the middle functional layer is divided into a capacitance functional area and a piezoelectric functional area which are coplanar and parallel, the piezoelectric functional area is located in the middle area of the polymer film layer, and the capacitance functional area surrounds the periphery of the piezoelectric functional area; the packaging protection layer is arranged at the top of the upper electrode; different functional areas of a capacitance functional area and a piezoelectric functional area are arranged on the same film layer surface, so that a capacitance dielectric film layer and a piezoelectric functional film layer are designed to be the same film layer, in combination with an in-situ plasma polarization process, directional high-voltage polarization processing is carried out on film surfaces of different areas of the same film layer, the overall thickness of the sensor after packaging can be effectively reduced, and the packaging cost is reduced. The sensor precision is improved.

The present application provides a mutually matched dual-chamber system for preparing a high-k dielectric film, comprising: a first chamber, a second chamber, an inner chamber total air inlet pipe, an inner chamber total air outlet pipe, an outer chamber total air inlet pipe and an outer chamber total air outlet pipe, wherein the first chamber and the second chamber are used to process different substrates at the same time. The dual-chamber system of the present application comprises a first chamber and a second chamber with a consistent structure, and the reaction chamber of the first chamber and the reaction chamber of the second chamber share an air inlet and outlet pipe, and the transmission chamber of the first chamber and the transmission chamber of the second chamber also share an air inlet and outlet pipe, so that the two chambers match in structure and air inlet and outlet, so that the process performance of the two chambers matches, and can be used to simultaneously process and obtain two substrates with consistent performance, thereby improving production and yield.

Disclosed are a method of forming an oxide film including at least two non-oxygen elements, a method of manufacturing a semiconductor device, a method of forming a dielectric film, and a semiconductor device. The method of forming an oxide film including at least two non-oxygen elements includes providing a first source material on a substrate, the first source material including a first central element; providing an electron donor compound to combine with the first source material; providing a second source material on the substrate after providing the electron donor compound, the second source material including a second central element; and providing an oxidizing agent on the substrate.

The invention relates to a semiconductor device and a manufacturing method thereof. A semiconductor device includes a ferroelectric memory cell, and the ferroelectric memory cell includes a select transistor and a memory transistor. The gate dielectric film of the select transistor includes a ferroelectric film, and the gate dielectric film of the memory transistor includes a ferroelectric film.

A capacitor according to the present invention includes a dielectric film that has a first surface and a second surface that faces the opposite direction from the first surface, a high-potential-side first electrode that is provided on the first surface of the dielectric film, and a low-potential-side second electrode that is provided on the second surface of the dielectric film. The work function of the first electrode is greater than the work function of the second electrode.

The invention belongs to the field of polymers, and relates to biaxially oriented polypropylene dielectric film, a modified polypropylene material and use thereof. The preparation raw materials of the biaxially oriented polypropylene dielectric film comprise a modified polypropylene grafted with an alkenyl-containing functional monomer. The modified polypropylene grafted with an alkenyl-containing functional monomer comprises a structural unit derived from polypropylene as a matrix phase and a structural unit derived from an alkenyl-containing functional monomer as a dispersion phase. The ash content of the modified polypropylene grafted with an alkenyl-containing functional monomer is less than 50 ppm. In the modified polypropylene grafted with an alkenyl-containing functional monomer, the mass ratio of the structure unit which is derived from an alkenyl-containing functional monomer and in a grafted state to the structure unit which is derived from an alkenyl-containing functional monomer and in a self-polymerization state is greater than or equal to 1.0. D50 of the dispersion phase is less than 450 nm. The biaxially oriented polypropylene dielectric film of the present invention can keep good dielectric performance and energy storage performance at a relatively high working temperature, and is suitable for high-temperature and high-operation field intensity working conditions.

A method (200) for selectively forming a low-k dielectric film (140) on an exposed dielectric position (130) in a substrate (10), the method (200) comprising: selectively depositing (210) a metal-containing film (110) on the exposed dielectric position (130) using an area selective deposition method using one or more deposition cycles; providing (220) at least one organic ligand vapor to the deposited metal-containing film (110) at least once to cause a gas phase chemical reaction, thereby obtaining a metal-organic framework (140), the metal-organic framework (140) being a low-k dielectric film (140), wherein the low-k dielectric film (140) has a gap (142) at a position where the metal-containing film is not deposited.

We disclose in this article a fluid and heat conduction sensor, comprising: a semiconductor substrate, which includes an etched portion; a dielectric region, which is located on the semiconductor substrate, wherein the dielectric region includes at least one dielectric film located above the etched portion of the semiconductor substrate; and a heating element, which is located within the dielectric film. The dielectric film includes one or more discontinuities located between the heating element and the edge of the dielectric film.

This film formation method comprises: a first film formation step; a second film formation step; and a third film formation step. In the first film formation step, a dielectric film is formed on a first conductive film. In the second film formation step, a metal oxide film is formed on the dielectric film. In addition, in the second film formation step, a metal oxide film is formed using heated oxygen gas and a vapor of an organic metal compound. In the third film formation step, a second conductive film is formed on the metal oxide film.

A Metal-containing film forming composition comprising a precursor having the formula: M(=NR1)(OR2)(OR3)mL. Wherein, M=V or Nb or Ta; R1-R3=independently H or C1-C10 alkyl group; L=Substituted or unsubstituted cyclopentadienes, cyclohexadienes, cycloheptadienes, cyclooctadienes, fluorenes, indenes, fused ring systems, propene, butadiene, pentadienes, hexadienes, heptadienes: m=0 or 1.

The present invention provides a highly flexible display device and a method for manufacturing the same. [Solution] A transistor comprising a translucent semiconductor film on a flexible substrate, A capacitive element in which a dielectric film is provided between the first electrode and the second electrode, and a semiconductor film covering the second electrode A dielectric film is formed with the first electrode. The capacitive element has a region where the first electrode and the dielectric film are in contact, and the The insulating film in 1 does not cover the region in question.

The invention relates to a coating material for a processing chamber. Embodiments described herein relate to methods of controlling the uniformity of SiN films deposited on large substrates. When a precursor gas or gas mixture in a chamber is excited by applying radio frequency (RF) power to the chamber, an RF current flowing through the plasma produces a standing wave effect (SWE) in an inter-electrode gap. When the substrate or electrode size approaches the RF wavelength, SWE becomes significant. Process parameters, such as process power, process pressure, electrode pitch, and gas flow ratio, may affect the SWE. These parameters may be altered in order to minimize SWE problems and achieve acceptable thickness and property uniformity. In some embodiments, methods of depositing a dielectric film over a large substrate at various process power ranges, at various process pressure ranges, at various gas flow rates while achieving various plasma densities will be used to reduce the SWE to yield greater plasma stability.

The invention relates to a semiconductor device and a manufacturing method thereof. The semiconductor device includes: a substrate including a memory cell region and a peripheral circuit region, the memory cell region having a first active region and the peripheral circuit region having a second active region; a capacitor structure formed in the memory cell region and including a lower electrode connected to the first active region, an upper electrode surrounding the lower electrode, and a capacitor dielectric film disposed therebetween; a lower insulating film disposed in the memory cell region and the peripheral circuit region and covering the capacitor structure; a first interlayer insulating film including a first lower interlayer insulating film and a first upper interlayer insulating film sequentially stacked on the lower insulating film; and a wiring line disposed in the first interlayer insulating film and electrically connected to the capacitor structure, in which the first upper interlayer insulating film includes a first material including a benzene ring.

This disclosure relates to a dry film structure that includes a carrier substrate; and a dielectric film supported by the carrier substrate. The dielectric film includes at least one dielectric polymer and low amounts of metals.

Embodiments are described that include semiconductor processing methods for forming a dielectric film on a semiconductor substrate. The method may include providing a silicon-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The method may include providing an inert precursor to the processing region of the semiconductor processing chamber. The method may include generating a plasma effluent of the silicon-containing precursor, the nitrogen-containing precursor, and the inert precursor. The method may include depositing a silicon-containing material on the substrate.

Semiconductor devices are provided. The semiconductor devices includes a landing pad on a substrate, a lower electrode on the landing pad and connected to the landing pad, a capacitor dielectric film that is on the lower electrode and includes both a tetragonal crystal system and an orthorhombic crystal system, a first doping layer that is between the lower electrode and the capacitor dielectric film and includes a first metal, and an upper electrode on the capacitor dielectric film.

The siloxanes containing compositions and methods are disclosed. The disclosed method relates to a method of depositing a dielectric film on a substrate, the method involving the steps of a) placing the substrate in a reaction chamber; b) introducing a process gas comprising a cyclic silicon-containing compound and an oxidant; and c) exposing the substrate to the process gas under conditions such that the cyclic silicon-containing compound and the oxidant react to form a flowable film on the substrate surface. The method can further involve converting the flowable film into a solid dielectric material (e.g., a silicon oxide film). In certain embodiments, conversion of the film may be accomplished by annealing the as-deposited film by a thermal, plasma anneal and / UV curing.

A method of processing a substrate that includes: loading the substrate in a processing system, the substrate including a metal having a metal surface and a first dielectric material having a dielectric material surface, the metal surface and the dielectric material surface being at the same level; etching the metal to form a recessed metal surface below the dielectric material surface; selectively forming a self-assembled monolayer (SAM) on the recessed metal surface using a spin-on process; and depositing a dielectric film including a second dielectric material on the dielectric material surface.

The invention relates to a dielectric film activator, a semiconductor substrate manufactured using the same, and a semiconductor device. According to the present invention, by using a dielectric film activator capable of reducing the content of a by-product carbon compound between a precursor mixed in a dielectric film and a reaction gas and providing a thin film density increasing effect, the capacitance of the dielectric film is improved, and the thin film density increasing effect is provided through a simple process.

A cable includes an inner conductor and a dielectric layer extending around the inner conductor. The dielectric layer includes a bi-directionally stretched polypropylene film having a porous structure that includes a plurality of pores that extend through a thickness of the bi-directionally stretched polypropylene film. The dielectric layer includes air molecules trapped within the pores of the bi-directionally stretched polypropylene film such that the dielectric layer includes polypropylene and air. The cable includes an outer conductor extending around the dielectric layer.

The invention relates to a funnel diode realized based on a nanopore modified dielectric polymer molecule monolayer, and relates to the technical field of semiconductor devices. The preparation method of the funnel diode comprises the following steps: forming a three-layer PVP dielectric film through bi-crosslinking treatment, and constructing a nanopore array on the surface of the three-layer PVP dielectric film by using a soft nanoimprint technology to form a polymer nano dielectric layer; sequentially depositing an organic semiconductor layer and a top electrode to complete a diode main body structure; and finally, integrating a molecular memory monolayer formed by gold nanoclusters or copper stearate. The device is compact in structure, the unidirectional convergence of current carriers is realized by utilizing a funnel effect generated by the nanopores, and the device has the characteristics of high-voltage rectification ratio and ultralow working voltage under the coordination of a single molecular layer, and has nonvolatile storage and synaptic plasticity.

We disclose herein a flow and thermal conductivity sensor comprising a semiconductor substrate comprising an etched portion, a dielectric region located on the semiconductor substrate, wherein the dielectric region comprises at least one dielectric membrane located over the etched portion of the semiconductor substrate and a heating element located within the dielectric membrane. The dielectric membrane comprises one or more discontinuities located between the heating element and an edge of the dielectric membrane.