16 results about "Dielectric membrane" patented technology

The present invention provides a highly flexible display device and a method for manufacturing the same. [Solution] A transistor comprising a translucent semiconductor film on a flexible substrate, A capacitive element in which a dielectric film is provided between the first electrode and the second electrode, and a semiconductor film covering the second electrode A dielectric film is formed with the first electrode. The capacitive element has a region where the first electrode and the dielectric film are in contact, and the The insulating film in 1 does not cover the region in question.

The utility model provides a self-powered vibration sensor based on a friction nanometer generator, and the sensor comprises a vibration sensor body which comprises a housing; the sleeve is arranged on the shell in a sleeving manner, and a mounting cavity is defined between the sleeve and the shell; the friction nanometer generator is arranged in the mounting cavity, the friction nanometer generator comprises a first dielectric film, a second dielectric film and a moving assembly, the second dielectric film is arranged on the shell, the moving assembly comprises a lantern ring and an elastic piece, the lantern ring movably sleeves the shell, the first dielectric film is arranged on the lantern ring and is in contact fit with the second dielectric film, and the elastic piece is arranged on the first dielectric film. The two ends of the elastic piece are connected to the lantern ring and the sleeve respectively. According to the self-powered vibration sensor based on the friction nanometer generator, the structure of the friction nanometer generator is simple, the friction nanometer generator can adjust the power generation friction area according to the vibration amplitude of a product tested by the vibration sensor, and the power generation amount of the friction nanometer generator can be improved.

An acoustic wave device including an IDT electrode on a piezoelectric film, in which a Z-axis direction of a crystal is different from a direction of a normal to a major surface. An overlap region of the IDT electrode includes a central region and first and second edge regions. First and second dielectric films are stacked between the piezoelectric film and first and second electrode fingers in the first and second edge regions. When an angle between a first side surface of the first dielectric film and a major surface of the piezoelectric film is α1 and an angle between a second side surface of the second dielectric film and the major surface of the piezoelectric film is α2, α1≠α2 between at least one electrode finger of the first and second electrode fingers and the piezoelectric film.

Methods for repairing and replenishing carbon content of low-k dielectric films are provided. In some embodiments, the methods include generating plasma radicals in a remote plasma source, flowing a precursor gas comprising a recovery precursor into a processing region, and exposing the precursor gas and a low-k film on a substrate in the processing region to plasma radicals from the remote plasma source to decrease a k-value and increase a carbon content of the low-k film.

The application discloses a full-silicon rubber dielectric elastomer driver, a preparation method and application, the dielectric elastomer driver is sequentially from top to bottom a soft electrode layer, a dielectric composite film and a hard electrode layer, the soft electrode layer and the hard electrode layer form an asymmetric electrode structure; the dielectric composite film is prepared into a composite film, namely a CCSR film, by a solution blending method through silicon rubber SR and silane coupling modified carbon black, namely CTES@CB particles; under the action of an applied electric field, the dielectric composite film is deformed under the action of Maxwell electro-elastic force, the hard electrode layer limits the deformation of the corresponding side, and the soft electrode layer releases the deformation of the corresponding side, so that the driver generates enhanced out-of-plane driving displacement. The application provides a preparation technology of a high-dielectric-constant and high-breakdown-strength silicon rubber dielectric film, proposes a strategy of releasing normal deformation by an asymmetric electrode, obtains a DEA driver with enhanced out-of-plane deformation, and realizes continuous dynamic display of a Braille pattern.

A semiconductor device includes a lower structure; a lower electrode on the lower structure; an upper electrode covering the lower electrode on the lower structure; and a dielectric structure disposed between the lower electrode and the upper electrode. The dielectric structure includes a first dielectric film including a first material and a second dielectric film including a second material different from the first material. The first dielectric film includes a first surface in contact with or facing the lower electrode and a second surface facing the first surface. The second dielectric film includes a first portion disposed in an opening of the first dielectric film and extending in a direction from the second surface toward the first surface.

A method includes forming a structure in which a first conductive film, a dielectric film, a second conductive film, and a capping layer are sequentially stacked on a substrate; forming a mask pattern on the capping layer; etching the capping layer by using the mask pattern; forming a control gate line by etching the second conductive film by using the mask pattern as an etch mask, the control gate line comprising an inclined surface; etching a portion of the dielectric film and the first conductive film using the mask pattern as an etch mask to form a floating gate line from the first conductive film, and a remaining dielectric film from the dielectric film; forming an insulating spacer covering a sidewall of the floating gate line and the inclined surface of the control gate line; and forming a selection gate structure covering the insulating spacer and the capping layer.

A semiconductor device is disclosed. The semiconductor device may include a ground pad and a lower electrode, the lower electrode being located on and connected to the ground pad and including an outer portion and an inner portion within the outer portion. The outer portion includes a first region and a second region. The semiconductor device may further include a dielectric film on the first region of the outer portion of the lower electrode and an upper electrode located on the dielectric film. The first region of the outer portion of the lower electrode may include a silicon (Si) dopant, and the dielectric film does not extend along the second region of the outer portion. The concentration of silicon dopant in the first region of the outer portion is different from the concentration of silicon dopant in the second region of the outer portion and is higher than the concentration of silicon dopant in the inner portion.

A capacitor that includes an insulating substrate; a capacitance forming portion including a metal porous body, a dielectric film, and a conductive film; and a sealing portion that seals the capacitance forming portion. The capacitance forming portion is on a first main surface of the insulating substrate. A first external connection line including a first via conductor penetrating the insulating substrate from the first main surface side toward the second main surface side is connected to the metal porous body; and a second external connection line including a second via conductor penetrating the insulating substrate from the first main surface side toward the second main surface side is connected to the conductive film. When viewed in a normal direction of the first main surface, the first via conductor and the second via conductor are both in a region where the capacitance forming portion is disposed.

Disclosed is a display device with improved reliability and a method for manufacturing the display device. In the display device, at least one of a plurality of dielectric films provided between an oxide semiconductor layer and a light-emitting element includes a lower region provided on the oxide semiconductor layer and an upper region provided on the lower region, the upper region including a trapping element configured to trap hydrogen, whereby the reliability of a thin film transistor including the oxide semiconductor layer is improved.

A method for fabricating a semiconductor device includes sequentially stacking an etching stop film, first mold layer, first supporter layer, second mold layer, second supporter layer, third mold layer, and third supporter layer on a substrate extending in a first direction and a second direction, perpendicular to the first direction, forming a lower electrode which penetrates the etching stop film, the first mold layer, the first supporter layer, the second mold layer, the second supporter layer, the third mold layer, and the third supporter layer, removing the first mold layer, the second mold layer and the third mold layer, forming a dielectric film extending along the lower electrode and the first to third supporter layers, and forming an upper electrode on the dielectric film. The second mold layer includes a first film including no nitrogen, and a second film, disposed on the first film, including nitrogen.

The present disclosure pertains to a dielectric film-forming composition comprising: (a) at least one resin selected from the group consisting of: i) a fully imidized polyimide polymer; ii) a polyamic acid ester; iii) a cyclized polydiene resin; and iv) a mixture of a cyclized polydiene resin and a cyanate ester compound; and (b) at least one additive selected from the group consisting of: i) a polybenzoxazole (PBO) precursor; ii) a PBO particle; iii) a mixture of PBO and silica particles; and iv) a PBO resin containing at least two reactive functional groups.

This application relates to a polyimide-oxide-based composite dielectric film, comprising a polyimide layer formed by molecular layer deposition on a substrate and an inorganic oxide layer formed by atomic layer deposition. This application also relates to a method for preparing this polyimide-oxide-based composite dielectric film. This polyimide-inorganic oxide-based composite dielectric film possesses intrinsic flexibility and excellent insulating gate dielectric properties, and can be widely used in flexible electronic circuits. Using this polyimide-inorganic oxide-based composite dielectric film, all-carbon nanotube transistors with the composite dielectric film as the insulating gate dielectric layer and various flexible integrated circuit units, including inverters, ring oscillators, and logic gate circuits, can be fabricated. These flexible devices and circuits exhibit good mechanical properties; the inverter circuit has excellent gain performance and can be used as an analog amplifier to amplify small signals at the millivolt level; ultra-low drive voltage and ultra-low power consumption characteristics can also be achieved.

To provide a thin film capacitor having high flexibility. A thin film capacitor includes: a metal foil having a roughened upper surface; a dielectric film covering the upper surface of the metal foil and having an opening through which the metal foil is partly exposed; a first electrode layer contacting the metal foil through the opening; and a second electrode layer contacting the dielectric film without contacting the metal foil. The particle diameter of crystal at a non-roughened center part of the metal foil is less than 15 μm in the planar direction and less than 5 μm in the thickness direction. This can not only enhance the flexibility of the metal foil to reduce a short-circuit failure in a state where the thin film capacitor is incorporated in a multilayer substrate but also enhance positional accuracy.

This invention discloses a triboelectric nanogenerator based on suppressing interfacial charge loss and improving the maximum energy extraction of load voltage. It includes a slider and a stator arranged vertically. The slider comprises a slider substrate (1) made of a rigid dielectric polymer material and an electronegative dielectric film (2) disposed on the upper side of the slider substrate (1). A left electrode (3) and a right electrode (4) are respectively disposed on the left and right sides of the stator. The stator comprises a stator substrate (5) made of a rigid dielectric polymer material, with an electropositive material (6) covering the upper side of the stator substrate (5). The slider is placed on the stator. The slider unit can be integrated by adding internal electrodes. The spacing between adjacent internal electrodes is 0.5mm-6mm. The thickness of the electropositive material (6) is greater than 0.5mm, and the thickness of the stator substrate (5) is greater than 1mm. This triboelectric generator is simple and flexible in design, has excellent output performance, low cost, and wide applicability, facilitating its practical application.

A semiconductor device includes an underlying substrate, two stack units disposed over the underlying substrate, and a feature disposed between the stack units. The stack units are spaced apart from each other. Each of the stack units includes a plurality of conductive films and a plurality of dielectric films disposed to alternate with the conductive films, an inter-metal dielectric (IMD) portion, and a hard mask film. An uppermost one of the dielectric films of each of the stack units is disposed over the conductive films, and has a dimension smaller than those of the conductive films and those of remaining ones of the dielectric films of each of the stack units. The feature includes a plurality of repeating units and a plurality of separators which are disposed to alternate with the repeating units. A method for manufacturing the semiconductor device is also disclosed.