121 results about "Dielectric membrane" patented technology

An acoustic wave device includes a support substrate, a piezoelectric layer on the support substrate, a functional electrode on the piezoelectric layer, first and second electrode films on the piezoelectric layer, facing each other, and having different electric potentials from each other, and a dielectric film between at least one of at least a portion of the first electrode film and the piezoelectric layer and at least a portion of the second electrode film and the piezoelectric layer.

The invention discloses a coplanar parallel capacitance-piezoelectric multi-mode tactile sensor and a preparation method thereof. The coplanar parallel capacitance-piezoelectric multi-mode tactile sensor comprises a substrate, a lower electrode, a middle functional layer, an upper electrode and a packaging protection layer which are sequentially arranged from bottom to top, the middle functional layer is a high-molecular polyvinylidene fluoride (PVDF) polymer film layer; the middle functional layer is divided into a capacitance functional area and a piezoelectric functional area which are coplanar and parallel, the piezoelectric functional area is located in the middle area of the polymer film layer, and the capacitance functional area surrounds the periphery of the piezoelectric functional area; the packaging protection layer is arranged at the top of the upper electrode; different functional areas of a capacitance functional area and a piezoelectric functional area are arranged on the same film layer surface, so that a capacitance dielectric film layer and a piezoelectric functional film layer are designed to be the same film layer, in combination with an in-situ plasma polarization process, directional high-voltage polarization processing is carried out on film surfaces of different areas of the same film layer, the overall thickness of the sensor after packaging can be effectively reduced, and the packaging cost is reduced. The sensor precision is improved.

A capacitor according to the present invention includes a dielectric film that has a first surface and a second surface that faces the opposite direction from the first surface, a high-potential-side first electrode that is provided on the first surface of the dielectric film, and a low-potential-side second electrode that is provided on the second surface of the dielectric film. The work function of the first electrode is greater than the work function of the second electrode.

The invention belongs to the field of polymers, and relates to biaxially oriented polypropylene dielectric film, a modified polypropylene material and use thereof. The preparation raw materials of the biaxially oriented polypropylene dielectric film comprise a modified polypropylene grafted with an alkenyl-containing functional monomer. The modified polypropylene grafted with an alkenyl-containing functional monomer comprises a structural unit derived from polypropylene as a matrix phase and a structural unit derived from an alkenyl-containing functional monomer as a dispersion phase. The ash content of the modified polypropylene grafted with an alkenyl-containing functional monomer is less than 50 ppm. In the modified polypropylene grafted with an alkenyl-containing functional monomer, the mass ratio of the structure unit which is derived from an alkenyl-containing functional monomer and in a grafted state to the structure unit which is derived from an alkenyl-containing functional monomer and in a self-polymerization state is greater than or equal to 1.0. D50 of the dispersion phase is less than 450 nm. The biaxially oriented polypropylene dielectric film of the present invention can keep good dielectric performance and energy storage performance at a relatively high working temperature, and is suitable for high-temperature and high-operation field intensity working conditions.

This film formation method comprises: a first film formation step; a second film formation step; and a third film formation step. In the first film formation step, a dielectric film is formed on a first conductive film. In the second film formation step, a metal oxide film is formed on the dielectric film. In addition, in the second film formation step, a metal oxide film is formed using heated oxygen gas and a vapor of an organic metal compound. In the third film formation step, a second conductive film is formed on the metal oxide film.

The present invention provides a highly flexible display device and a method for manufacturing the same. [Solution] A transistor comprising a translucent semiconductor film on a flexible substrate, A capacitive element in which a dielectric film is provided between the first electrode and the second electrode, and a semiconductor film covering the second electrode A dielectric film is formed with the first electrode. The capacitive element has a region where the first electrode and the dielectric film are in contact, and the The insulating film in 1 does not cover the region in question.

The invention relates to a coating material for a processing chamber. Embodiments described herein relate to methods of controlling the uniformity of SiN films deposited on large substrates. When a precursor gas or gas mixture in a chamber is excited by applying radio frequency (RF) power to the chamber, an RF current flowing through the plasma produces a standing wave effect (SWE) in an inter-electrode gap. When the substrate or electrode size approaches the RF wavelength, SWE becomes significant. Process parameters, such as process power, process pressure, electrode pitch, and gas flow ratio, may affect the SWE. These parameters may be altered in order to minimize SWE problems and achieve acceptable thickness and property uniformity. In some embodiments, methods of depositing a dielectric film over a large substrate at various process power ranges, at various process pressure ranges, at various gas flow rates while achieving various plasma densities will be used to reduce the SWE to yield greater plasma stability.

Embodiments are described that include semiconductor processing methods for forming a dielectric film on a semiconductor substrate. The method may include providing a silicon-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The method may include providing an inert precursor to the processing region of the semiconductor processing chamber. The method may include generating a plasma effluent of the silicon-containing precursor, the nitrogen-containing precursor, and the inert precursor. The method may include depositing a silicon-containing material on the substrate.

The invention relates to a funnel diode realized based on a nanopore modified dielectric polymer molecule monolayer, and relates to the technical field of semiconductor devices. The preparation method of the funnel diode comprises the following steps: forming a three-layer PVP dielectric film through bi-crosslinking treatment, and constructing a nanopore array on the surface of the three-layer PVP dielectric film by using a soft nanoimprint technology to form a polymer nano dielectric layer; sequentially depositing an organic semiconductor layer and a top electrode to complete a diode main body structure; and finally, integrating a molecular memory monolayer formed by gold nanoclusters or copper stearate. The device is compact in structure, the unidirectional convergence of current carriers is realized by utilizing a funnel effect generated by the nanopores, and the device has the characteristics of high-voltage rectification ratio and ultralow working voltage under the coordination of a single molecular layer, and has nonvolatile storage and synaptic plasticity.

We disclose herein a flow and thermal conductivity sensor comprising a semiconductor substrate comprising an etched portion, a dielectric region located on the semiconductor substrate, wherein the dielectric region comprises at least one dielectric membrane located over the etched portion of the semiconductor substrate and a heating element located within the dielectric membrane. The dielectric membrane comprises one or more discontinuities located between the heating element and an edge of the dielectric membrane.

The utility model provides a self-powered vibration sensor based on a friction nanometer generator, and the sensor comprises a vibration sensor body which comprises a housing; the sleeve is arranged on the shell in a sleeving manner, and a mounting cavity is defined between the sleeve and the shell; the friction nanometer generator is arranged in the mounting cavity, the friction nanometer generator comprises a first dielectric film, a second dielectric film and a moving assembly, the second dielectric film is arranged on the shell, the moving assembly comprises a lantern ring and an elastic piece, the lantern ring movably sleeves the shell, the first dielectric film is arranged on the lantern ring and is in contact fit with the second dielectric film, and the elastic piece is arranged on the first dielectric film. The two ends of the elastic piece are connected to the lantern ring and the sleeve respectively. According to the self-powered vibration sensor based on the friction nanometer generator, the structure of the friction nanometer generator is simple, the friction nanometer generator can adjust the power generation friction area according to the vibration amplitude of a product tested by the vibration sensor, and the power generation amount of the friction nanometer generator can be improved.

Disclosed is a semiconductor device. The semiconductor device includes a lower electrode disposed on a substrate; a first lower interfacial film disposed on the lower electrode; a dielectric film disposed on the first lower interfacial film; a first upper interfacial film disposed on the dielectric film; and an upper electrode disposed on the first upper interfacial film, wherein each of the first lower interfacial film and the first upper interfacial film is a conductive single film, and the first lower interfacial film and the first upper interfacial film include the same metal element, wherein electronegativity of the metal element included in each of the first lower interfacial film and the first upper interfacial film is greater than electronegativity of a metal element included in the dielectric film.

Wavelength converter including: a phosphor layer; and a filter layer where the filter layer is attached directly to the phosphor layer, wherein the wavelength converter has a total thickness between 20 µm and 80 µm, wherein the filter layer comprises at least two different metal oxides selected from the group consisting of SiO2, Al2O3, TiO2, Nb2O5, Ta2O5, HfO2 and Y2O3.

The present invention provides a metal laminate that has both high-frequency characteristics and close adhesion of a laminate interface. The present invention relates to a metal laminate, a method for manufacturing the same, and a printed wiring board. The metal laminate is a metal laminate in which a metal layer composed of at least one layer containing a metal foil is laminated on at least one surface of a low-dielectric film, wherein a plurality of protrusions of the metal foil are formed on the surface of the metal foil on the low-dielectric film side, the width of the protrusions is set as a, the height of the protrusions is set as b, the average value of b / a + 3σ (where σ is the standard deviation of b / a) is 2.5 or less, and the peeling strength of the low-dielectric film and the metal layer is 3 N / cm or more.

Provided is a composite substrate capable of accommodating a conductor pattern having a desired thickness between an inorganic material substrate and a support substrate, and of improving heat dissipation and bonding reliability. A composite substrate according to one embodiment of the present invention comprises an inorganic material substrate, a conductor pattern, a dielectric film, and a support substrate. The inorganic material substrate has a substrate surface. A recess is provided on the substrate surface. The conductor pattern is embedded in the recess. The conductor pattern exposes at least a part of the substrate surface. The dielectric film is provided so as to cover the conductor pattern and the substrate surface exposed from the conductor pattern. The support substrate is positioned on the side opposite to the inorganic material substrate with respect to the dielectric film. The dielectric film and the support substrate are directly bonded to each other.

An acoustic wave device including an IDT electrode on a piezoelectric film, in which a Z-axis direction of a crystal is different from a direction of a normal to a major surface. An overlap region of the IDT electrode includes a central region and first and second edge regions. First and second dielectric films are stacked between the piezoelectric film and first and second electrode fingers in the first and second edge regions. When an angle between a first side surface of the first dielectric film and a major surface of the piezoelectric film is α1 and an angle between a second side surface of the second dielectric film and the major surface of the piezoelectric film is α2, α1≠α2 between at least one electrode finger of the first and second electrode fingers and the piezoelectric film.

To provide a substrate processing method for embedding a film in a recess, a method for manufacturing a semiconductor device, and a microwave plasma apparatus.SOLUTION: A substrate processing method comprising: preparing a substrate having a concavo-convex structure; forming a dielectric film containing at least silicon and nitrogen on the concavo-convex structure to form the dielectric film having a heterogeneous portion in a concave portion of the concavo-convex structure; and forming a protective film on a surface of the dielectric film by exposing the dielectric film to a first plasma containing an oxygen gas and forming a protective film including a cap layer that covers the heterogeneous portion by bonding an upper side of the heterogeneous portion of the concavo-convex structure.SELECTED DRAWING: Figure 1

A method for improving the nucleation of the γ phase in polyvinylidene fluoride (PVDF), a γ phase PVDF dielectric film based on the nucleation method, and a preparation method thereof are disclosed. The method involves using ceramic powder in the PVDF film material to enhance the nucleation ability of the γ phase crystals, improve the hydrophilicity of the PVDF film, and enhance the high-temperature dielectric properties of the PVDF film material. The dielectric film raw materials include 0-0.2 parts of ceramic powder (NBT), 10 parts of polyvinylidene fluoride (PVDF), and 200-204 parts of N,N-dimethylformamide (DMF). The preparation method is as follows: 1) Using N,N-dimethylformamide... 1) Prepare a 5% ceramic powder / polyvinylidene fluoride solution using amide as a solvent; 2) Drop the solution from step 1) onto a glass slide and cure it into a film in a vacuum oven at 68-72℃; 3) Melt the cured film obtained in step 2) on a hot stage at 200℃-220℃ to eliminate thermal history, and then rapidly cool it to 150-170℃ for isothermal crystallization until the blended film is completely crystallized; The preparation method of the γ-phase polyvinylidene fluoride dielectric film of the present invention is simple, convenient to operate, and has excellent performance, such as high temperature resistance, corrosion resistance, and strong piezoelectricity and ferroelectricity.

The present invention addresses the problem of providing a light-emitting device capable of both improving light extraction efficiency and improving bonding strength between a dielectric film and a translucent member. According to the technical scheme, the light-emitting device comprises a semiconductor part containing a light-emitting layer, a dielectric film which is arranged on the upper surface of the semiconductor part and contains an oxide, and a light-transmitting member which is arranged on the upper surface of the dielectric film, the refractive index of the dielectric film is smaller than that of the semiconductor part, and the refractive index of the dielectric film is smaller than that of the semiconductor part. The refractive index of the transparent member is closer to the refractive index of the transparent member, the oxide contains Al and Ta, and when the sum of a first content of Al contained in the oxide and a second content of Ta contained in the oxide is 100 at%, the second content is greater than 0 at% and 60 at% or less.

This suppresses the deterioration of ESR in hybrid-type electrolytic capacitors under low-temperature conditions. [Solution] An electrolytic capacitor is used, for example, in smoothing circuits and filter circuits, and comprises an anode body on which a dielectric film is formed, a cathode body facing the anode body, and an electrolyte interposed between the anode body and the cathode body. The electrolyte contains a conductive polymer and an electrolyte solution. The electrolyte solution contains glycerin accounting for 8 wt% to 55 wt% in the solvent and a polyhydric alcohol accounting for 70 wt% or less. The electrolytic capacitor is manufactured by comprising an anode manufacturing step for producing an anode body, a cathode manufacturing step for producing a cathode body, a solid electrolyte layer formation step for adhering the conductive polymer to the dielectric film by impregnating at least a dispersion of conductive polymer into the dielectric film and drying it, an element formation step for forming a capacitor element, and an electrolyte impregnation step for impregnating the capacitor element with the electrolyte solution prepared in the electrolyte solution preparation step.

Methods for repairing and replenishing carbon content of low-k dielectric films are provided. In some embodiments, the methods include generating plasma radicals in a remote plasma source, flowing a precursor gas comprising a recovery precursor into a processing region, and exposing the precursor gas and a low-k film on a substrate in the processing region to plasma radicals from the remote plasma source to decrease a k-value and increase a carbon content of the low-k film.

Aspects and embodiments disclosed herein include an acoustic wave device comprising a substrate, a pair of IDT electrodes formed on the substrate, a respective finger of one IDT electrode being separated from an adjacent finger of the other IDT electrode by a first pitch distance, and reflectors formed on the substrate interposing the pair of IDT electrodes therebetween, the reflectors and the pair of IDT electrodes arranged along a propagation direction of a main acoustic wave, each of the reflectors including a plurality of fingers separated from each other by a second pitch distance and extending in a same direction of extension as the plurality of fingers of the pair of IDT electrodes.

A semiconductor device includes an amorphous fluorinated carbon thin film having a dielectric constant of 10 or more as a gate dielectric film. The semiconductor device includes: a substrate; source / drain regions arranged facing each other on the substrate; a gate electrode disposed on the substrate to apply an electric field; and a gate dielectric film interposed between the gate electrode and the substrate.

Procedure with the following steps: Producing a first crack-stopping layer (106-A) of a first crack-stopping structure (106) over a first integrated circuit die (50A) and along side walls of the first integrated circuit die (50A); Forming a dielectric film (106-B) over the first crack-stopping layer (106-A); Forming a second crack-stopping layer (106-C) of the first crack-stopping structure (106) over the dielectric film (106-B); and Deposition of a first gap-filling dielectric (108) around the first crack-stopping structure (106) and the first integrated circuit die (50A).

A chemical vapor deposition method for preparing a dielectric film, the method comprising: providing a substrate into a reaction chamber; introducing a gaseous reagent into the reaction chamber, wherein the gaseous reagent comprises a silicon precursor comprising a silicon compound having the formula R n H 4‑n Si as defined herein, and applying energy to the gaseous reagent in the reaction chamber to induce a reaction of the gaseous reagent to deposit a film on the substrate. The deposited film is suitable for its intended use without the need to apply an optional additional curing step to the film as deposited.

The present application relates to a capacitor, a manufacturing method and an electronic device. The capacitor comprises: a bottom electrode, the bottom electrode comprising a plurality of stacked cylindrical portions, the plurality of stacked cylindrical portions gradually decreasing in diameter from bottom to top; a dielectric film, covering the outside of the bottom electrode; and a top electrode, covering the outside of the dielectric film. The plurality of stacked cylindrical portions gradually decreasing in diameter from bottom to top form the bottom electrode, so that the height of the bottom electrode is easy to adjust during manufacturing, and the bottom electrode is not easy to collapse when the height is higher.

An acoustic wave device is provided that includes a piezoelectric layer and first and second resonators. The first resonator includes a first functional electrode and a first dielectric film on the piezoelectric layer. The second resonator includes a second functional electrode and a second dielectric film on the piezoelectric layer. The piezoelectric layer includes first and second resonator portions respectively including portions of the first and second resonators. Moreover, a resonant frequency of the first resonator is lower than that of the second resonator. A thickness of the first resonator portion is greater than that of the second resonator portion, and ts1 / tp1≤ts2 / tp2 is satisfied, where tp1, tp2, ts1, and ts2 are respectively thicknesses of the first and second resonator portions and the first and second dielectric films.

The application discloses a full-silicon rubber dielectric elastomer driver, a preparation method and application, the dielectric elastomer driver is sequentially from top to bottom a soft electrode layer, a dielectric composite film and a hard electrode layer, the soft electrode layer and the hard electrode layer form an asymmetric electrode structure; the dielectric composite film is prepared into a composite film, namely a CCSR film, by a solution blending method through silicon rubber SR and silane coupling modified carbon black, namely CTES@CB particles; under the action of an applied electric field, the dielectric composite film is deformed under the action of Maxwell electro-elastic force, the hard electrode layer limits the deformation of the corresponding side, and the soft electrode layer releases the deformation of the corresponding side, so that the driver generates enhanced out-of-plane driving displacement. The application provides a preparation technology of a high-dielectric-constant and high-breakdown-strength silicon rubber dielectric film, proposes a strategy of releasing normal deformation by an asymmetric electrode, obtains a DEA driver with enhanced out-of-plane deformation, and realizes continuous dynamic display of a Braille pattern.

Embodiments of the present disclosure generally relate to methods of plasma curing a dielectric material layer formed on a substrate. More specifically, the methods disclosed herein utilize a xenon (Xe) containing gas to generate a plasma that allows for greater dielectric compositional modulation. In some embodiments, a method of curing a substrate includes depositing a dielectric film onto a substrate to form a dielectric layer on a surface of a substrate, and performing a plasma cure operation on the formed dielectric layer. The plasma cure operation includes generating a plasma over a surface of the formed dielectric layer by delivering a RF power to a plasma process gas. The plasma process gas include Xe and H2.

A battery structure is provided that includes a single layer dielectric film coating organic composite ceramic particles. [Solution] The battery structure of the present invention includes a negative electrode (10), a positive electrode (20), and a dielectric film (30) positioned between the positive and negative electrodes. The dielectric film includes a polymer material (321) serving as the base of the dielectric film, the polymer material including a mixture of polyvinylidene fluoride-hexafluoropropylene copolymer, hydrogenated nitrile butadiene rubber, and succinonitrile. A lithium salt (322) is dispersed in the polymer material. A plurality of composite ceramic particles (100) are dispersed in the polymer material. Each composite ceramic particle includes ceramic particles for guiding and dispersing lithium ions, a dopamine layer coating the outer surface of the ceramic particle to form a primary particle, and a PVDF layer coating the outer surface of the primary particle.