111results about How to "Excellent gap filling" patented technology

A method is described for forming a low-k dielectric film, in particular, a pre-metal dielectric (PMD) on a semiconductor wafer which has good gap-filling characteristics. The method uses a thermal sub-atmospheric CVD process that includes a carbon-containing organometallic precusor such as TMCTS or OMCTS, an ozone-containing gas, and a source of dopants for gettering alkali elements and for lowering the reflow temperature of the dielectric while attaining the desired low-k and gap-filling properties of the dielectric film. Phosphorous is a preferred dopant for gettering alkali elements such as sodium. Additional dopants for lowering the reflow temperature include, but are not limited to boron, germanium, arsenic, fluorine or combinations thereof.

A semiconductor device having metal gate includes a substrate, a first metal gate positioned on the substrate, and a second metal gate positioned on the substrate. The first metal gate includes a first work function metal layer, and the first work function metal layer includes a taper top. The second metal gate includes a second work function metal layer. The first work function metal layer and the second work function metal layer are complementary to each other.

A method for forming an L-shaped spacer using disposable polysilicon top spacers. A semiconductor structure is provided having a gate structure thereon. A liner oxide layer is formed on the gate structure. A dielectric spacer layer is formed on the liner oxide layer. A disposable polysilicon top spacer layer is formed on the dielectric spacer layer. The disposable polysilicon top spacer layer is anisotropically etched to form disposable polysilicon top spacers. The dielectric spacer layer is etched to form L-shaped dielectric spacers, using the disposable polysilicon top spacers as an etch mask. The disposable polysilicon top spacers are removed leaving an L-shaped dielectric spacer. In one embodiment, lightly doped source and drain regions are formed prior to forming the liner oxide layer and the L-shaped spacers.

The present invention relates to a method for fabricating a semiconductor device with realizable advanced fine patterns. The method includes the steps of: forming a hard mask insulation layer on an etch target layer; forming a hard mask sacrificial layer on the hard mask insulation layer; coating a photoresist on the hard mask insulation layer; performing selectively a photo-exposure process and a developing process to form a photoresist pattern having a first width for forming a line pattern; etching selectively the hard mask sacrificial layer by using the photoresist pattern as an etch mask to form a sacrificial hard mask having a second width; removing the photoresist pattern; etching the hard mask insulation layer by controlling excessive etching conditions with use of the sacrificial hard mask as an etch mask to form a hard mask having a third width; and etching the etch target layer by using the sacrificial hard mask and the hard mask as an etch mask to form the line pattern having a fourth width, wherein the first width is wider than the fourth width.

A HDP CVD process for depositing a USG liner followed by a FSG dielectric layer on a metal line pattern is described. The substrate is heated in a chamber with a plasma comprised of Ar and O₂. A USG liner is deposited in two steps wherein the first step is without an RF bias and the second step is with a moderate RF bias that does not damage the metal lines or an anti-reflective coating on the metal. The moderate RF bias is critical in forming a sputtering component that redeposits USG to form more uniform sidewalls and better coverage at top corners of metal lines. The USG deposition process has a good gap filling capability and significantly reduces device failure rate by preventing corrosion of metal lines during subsequent thermal process cycles. The method also includes a PECVD deposited FSG layer that is planarized to complete an IMD layer.

A method for forming an L-shaped spacer using a sacrificial organic top coating. A semiconductor structure is provided having a gate structure thereon. A liner oxide layer is formed on the gate structure. A dielectric spacer layer is formed on the liner oxide layer. In the preferred embodiment, the dielectric spacer layer comprises a silicon nitride layer or a silicon oxynitride layer. A sacrificial organic layer is formed on the dielectric spacer layer. The sacrificial organic layer and the dielectric spacer layer are anisotropically etched to form spacers comprising a triangle-shaped sacrificial organic structure and an L-shaped dielectric spacer. The triangle-shaped sacrificial organic structure is removed leaving an L-shaped dielectric spacer.

A method of fabricating a dielectric layer includes the following steps. At first, a dielectric layer is formed on a substrate, and a chemical mechanical polishing (CMP) process is performed on the dielectric layer. Subsequently, a surface treatment process is performed on the dielectric layer after the chemical mechanical polishing process, and the surface treatment process includes introducing an oxygen plasma.

A method of fabricating a trench isolation with high aspect ratio. The method comprises the steps of: providing a substrate with a trench; depositing a first isolation layer filling the trench by low pressure chemical vapor deposition; etching the first isolation layer so that its surface is lowered to the opening of the trench; depositing a second isolation layer to fill the trench without voids by high density plasma chemical vapor deposition and achieving global planarization by chemical-mechanical polishing then providing a rapidly annealing procedure. Accordingly, the present invention achieves void-free trench isolation with high aspect ratio.

The method for manufacturing an STI in a semiconductor device with an enhanced gap-fill property and leakage property is disclosed by introducing a nitridation process instead of forming a liner nitride. The method includes steps of: preparing a semiconductor substrate obtained by a predetermined process on which a pad oxide and a pad nitride are formed on predetermined locations thereof; forming an isolation trench with a predetermined depth in the semiconductor substrate; forming a wall oxide on the trench; forming a liner oxide on the wall oxide and an exposed surface of the pad nitride; carrying out a nitridation process for forming a nitrided oxide; forming an insulating layer over the resultant structure, wherein the isolation trench is filled with the insulating layer; and planarizing a top face of the insulating layer.

A thin film comprising a composition obtained by polymerizing a monomer having the formula I:

wherein:

• • R₁ is a hydrolysable group,
  • R₂ is a polarizability reducing organic group, and
  • R₃ is a bridging hydrocarbon group, to form a siloxane material. The invention also concerns methods for producing the thin films. The thin film can be used a low k dielectric in integrated circuit devices. The novel dielectric materials have excellent properties of planarization resulting in good local and global planarity on top a semiconductor substrate topography, which reduces or eliminates the need for chemical mechanical planarization after dielectric and oxide liner deposition.

The invention discloses a method for preparing a copper-based solder. The method comprises the following steps: (1) burdening: preparing a furnace burden from copper, manganese, nickel, cobalt, silicon, a copper-ferrous intermediate alloy, a copper-boron intermediate alloy and a copper-mixed rare earth intermediate alloy serving as raw materials; (2) casting: putting the prepared furnace burden into the a corundum crucible according to the sequence of manganese, copper, nickel, cobalt, silicon, copper-boron intermediate alloy, copper-mixed rare earth intermediate alloy and copper-ferrous intermediate alloy, smelting by adopting medium-frequency induction, and cooling along with the furnace to obtain an alloy blank, wherein the smelting process is performed under the protection of argon gas; and (3) rolling: rolling the alloy blank with a cold-rolling mill to obtain the copper-based solder. The copper-based solder provided by the invention can be applied to an ODS (Oxide Dispersion Strengthened) high-temperature alloy welding joint, has high brazing process performance, heat resistance, corrosion resistance and machining process, and is low in cost.

The invention relates to a collecting pipe material for a micro-channel heat exchanger, which consists of a layer of brazing layer alloy and a layer of matrix alloy, wherein the brazing layer alloy comprises the following components in percentage by weight: 9-11% of Si, 0.2-0.4% of Fe, 0.005-0.05% of Cu, 0.005-0.05% of Mn, 0.005-0.05% of Mg, 0.005-0.05% of Cr, 0.3-0.7% of Zn, 0.005-0.05% of Zr, 0.005-0.10% of Ti and the balance of A1; the preparation method of the brazing layer alloy comprises the processes of casting, modifying and founding; the preparation method of the matrix alloy comprises the processes of casting, founding and homogenizing; processes of compositing, hot rolling, cold rolling and intermediate annealing are carried out on the brazing layer alloy and the matrix alloy to obtain the collecting pipe material; the brazing layer alloy has favorable grain refining effect so that favorable fluidity, wettability and gap filling capability are provided during the brazing of the material; cold machining is carried out on the material with a machining rate of 25-35% after the intermediate annealing treatment; and the machining rate can ensure that the forming property is favorable during the pipe making of the material and the fluidity of the brazing layer is favorable during the brazing of the collecting pipe.

An apparatus and method for depositing thin films. The apparatus generally comprises a process chamber having one or more walls and a lid and two heat exchangers. A first heat exchanger is coupled to the walls and a second heat exchanger is coupled to the lid. The two heat exchangers are configured to provide separate temperature control of the walls and lid. Separate control of the lid and wall temperatures inhibits reaction of the organosilane within the lid while optimizing a reaction within the chamber. The apparatus implements a method, in which a process gas comprising ozone and an organosilane are admitted through the into a processing while a substrate is heated to form a carbon-doped silicon oxide layer over the substrate. During deposition, the lid is kept cooler than the walls.

A hot-melt silicone adhesive comprising: (A) an organopolysiloxane resin with a softening point in the range of 40 to 250° C.; (B) an organopolysiloxane that at 25° C. is liquid or in the state of a crude rubber, which contains in one molecule at least two alkenyl groups; (C) a composition selected from a mixture of (i) an organopolysiloxane that contains silicon-bonded hydrogen atoms and (ii) an organic silicon compound that contains a silicon-bonded alkoxy group; or (iii) an organopolysiloxane that contains silicon-bonded hydrogen atoms and a silicon-bonded alkoxy group; (D) a hydrosilylation catalyst; and (E) a hydrosilylation-reaction inhibitor, demonstrates good gap-filling ability during thermo-compressive bonding to adherends with high surface roughness, even at low pressures, and that provides strong adhesion to the adherend after cross-linking.