The invention discloses high-density Sn < 2 + >-doped
silicon-
boron-
gadolinium scintillation glass as well as a preparation method and application thereof, and belongs to the field of
scintillation luminescent materials. The high-density Sn < 2 + > doped
silicon-
boron-
gadolinium scintillation glass comprises a main body component, a
reducing agent and externally doped Sn < 2 + >, the main body components comprise SiO2, B2O3, Gd2O3, GdF3 and X, and the X is one or more of Al2O3, AlF3, BaO and BaF2; the
molar percentages of SiO2, B2O3, Gd2O3, GdF3 and X are as follows: the
molar percentage of SiO2 is 5 to 10 mol percent, the
molar percentage of B2O3 is 15 to 30 mol percent, the molar percentage of Gd2O3 is 25 to 35 mol percent, the molar percentage of GdF3 is 25 to 35 mol percent, and the molar percentage of X is 5 to 15 mol percent; the sum of the main components is 100 mol%; the molar percentage of the
reducing agent is 0.5-2 mol%; the molar percentage of the externally doped Sn < 2 + > is 0.5-2 mol%; the density of the high-density Sn < 2 + > doped
silicon-
boron-
gadolinium scintillation glass is 6-6.26 g / cm < 3 >, the
photoluminescence quantum efficiency is 75%-90%, the density, the
photoluminescence quantum efficiency and the X-
ray imaging resolution of the scintillation glass are greatly improved, and the preparation cost of the high-density scintillation glass is reduced.