35991results about How to "Increase temperature" patented technology

An electrosurgical stapling apparatus is provided which uses thermogenic energy as well as surgical fasteners or staples for strengthening tissue, providing hemostasis, tissue joining or welding. The thermogenic energy also strengthens tissue in proximity to a staple line and knife cut line and provides hemostasis along the staple and cut lines formed by the staples and a knife blade during surgical stapling. The use thermogenic energy provides short-term hemostasis and sealing, and reduces or prevents staple line and cut line bleeding, while the stapling features provide short and long-term tissue strength and hemostasis. The stapling apparatus further substantially reduces or prevents knife cut line bleeding by energizing a knife blade for cauterizing tissue while it is being cut. In one embodiment, energy is applied to the anvil to energize the staples as they make contact with the anvil.

Apparatus for forming a lesion in body tissue includes a probe having an active region with an electrode for contacting tissue to be treated, and an inactive region including an insulative sleeve around a portion of the electrode. The temperature of the inactive region is monitored using a temperature sensor. A controller supplies radio frequency energy to the electrode and samples signals from the temperature sensor. By performing a calculation using the sampled signals and a predetermined inactive region threshold temperature, and by adjusting the supplied radio frequency power, the inactive region of the probe can be maintained at or below an inactive region maximum temperature while the controller continues to supply radio frequency energy to the electrode. The probe has a second temperature sensor, mounted at a distal end of the electrode, the controller being configured to reduce the supplied radio frequency power when the electrode temperature reaches a predetermined maximum electrode temperature.

The present invention relates to curing of semiconductor wafers. More particularly, the invention relates to cure chambers containing multiple cure stations, each featuring one or more UV light sources. The wafers are cured by sequential exposure to the light sources in each station. In some embodiments, the wafers remain stationary with respect to the light source during exposure. In other embodiments, there is relative movement between the light source and the wafer during exposure. The invention also provides chambers that may be used to independently modulate the cross-linking, density and increase in stress of a cured material by providing independent control of the wafer temperature and UV intensity.

A UV light irradiating apparatus for irradiating a semiconductor substrate with UV light includes: a reactor in which a substrate-supporting table is provided; a UV light irradiation unit connected to the reactor for irradiating a semiconductor substrate placed on the substrate-supporting table with UV light through a light transmission window; and a liquid layer forming channel disposed between the light transmission window and at least one UV lamp for forming a liquid layer through which the UV light is transmitted. The liquid layer is formed by a liquid flowing through the liquid layer forming channel.

Disclosed is a heat treatment system for semiconductor devices. The heat treatment system is used in a heat treatment process for semiconductor devices, such as a crystallization process for an amorphous silicon thin film or a dopant activation process for a poly-crystalline silicon thin film formed on a surface of a glass substrate of a flat display panel including a liquid crystal display (LCD) or an organic light emitting device (OLED). The heat treatment system transfers a semiconductor device after uniformly preheating the semiconductor device in order to prevent deformation of the semiconductor device during the heat treatment process, rapidly performs the heat treatment process under the high temperature condition by heating the semiconductor device using a lamp heater and induction heat derived from induced electromotive force, and unloads the semiconductor device after uniformly cooling the semiconductor device such that the semiconductor device is prevented from being deformed when the heat treatment process has been finished. The heat treatment system rapidly performs the heat treatment process while preventing deformation of the semiconductor device by gradually heating or cooling the semiconductor device.

A semiconductor wafer is processed while being supported without mechanical contact. Instead, the wafer is supported by gas streams emanating from a large number of passages in side sections positioned very close to the upper and lower surface of the wafer. The gas heated by the side sections and the heated side sections themselves quickly heat the wafer to a desired temperature. Process gas directed to the “device side” of the wafer can be kept at a temperature that will not cause deposition on that side section, but yet the desired wafer temperature can be obtained by heating non-process gas from the other side section to the desired temperature. A plurality of passages around the periphery of the wafer on the non-processed side can be employed to provide purge gas flow that prevents process gas from reaching the non-processed side of the wafer and the adjacent area of that side section.

A method for cleaning a process chamber, comprising the steps of introducing at least one cleaning gas to the process chamber; and employing a rapid heating module located in the process chamber, wherein the rapid heating module increases the temperature of chamber parts and improves the surface temperature uniformity of chamber parts when the module is turned on, thereby assisting the cleaning activity of the cleaning gas such that the process chamber is cleaned.

A gas inlet manifold for a plasma chamber having a perforated gas distribution plate suspended by a side wall comprising one or more sheets. The sheets preferably provide flexibility to alleviate stress in the gas distribution plate due to thermal expansion and contraction. In another aspect, the side wall provides thermal isolation between the gas distribution plate and other components of the chamber.

A relatively low cost, easy to install and aesthetically pleasing digital video broadcast from satellite (DVBS) elliptical horn antenna designed to receive satellite television broadcast signals with circular polarity. This type antenna may be implemented as a multi-beam, multi-band antenna with closely spaced antenna feed horns operable for simultaneously receiving signals from multiple satellites that are closely spaced from the perspective of the antenna.