2849 results about "High frequency power" patented technology

A rotational antenna and a semiconductor manufacturing device provided with the same are disclosed. The rotational antenna includes a plurality of coils connected in parallel to a high frequency power source and arranged at a regular interval around an axis in a symmetrical relationship with respect to the axis, wherein an electromagnetic field for generating inductively coupled plasma is uniformly formed when the coils are rotated about the axis.

A substrate processing apparatus includes a chamber, a susceptor to receive a substrate and provided in the chamber, a gas supply source to supply a predetermined gas into the chamber, and a high frequency power source to treat the substrate by plasma. The susceptor includes a first ceramics base member including a flow passage to let a coolant pass through, a first conductive layer formed on a principal surface and a side surface on a substrate receiving side of the first ceramics base member, and an electrostatic chuck stacked on the first conductive layer and configured to electrostatically attract the wafer received thereon. A volume of the flow passage is equal to or more than a volume of the first ceramics base member. The high frequency power source is configured to supply high frequency power to the first conductive layer.

Methods and apparatus for resecting and ablating tissue at a target site of a patient, the apparatus including a probe having an elongate shaft. The shaft includes a shaft distal end portion and a shaft proximal end portion, and a resection unit located at the shaft distal end portion. The resection unit includes a resection electrode support and at least one resection electrode arranged on the resection electrode support. The at least one resection electrode includes a resection electrode head. The probe and resection electrode head are adapted for concurrent electrical ablation and mechanical resection of target tissue. The shaft may include at least one digestion electrode capable of aggressively ablating resected tissue fragments. At least one fluid delivery port on the shaft distal end portion may provide an electrically conductive fluid to the resection unit or to the target site. The shaft may include at least one aspiration port, located proximal to the resection unit, for aspirating excess or unwanted fluids and resected tissue fragments from the target site. The at least one aspiration port is coupled to an aspiration lumen. The at least one digestion electrode may be arranged within the aspiration lumen for ablation of tissue fragments therein. In use, the digestion and resection electrodes of the probe are coupled to a high frequency power supply. A surgical kit comprising the probe is also disclosed, together with a method of making the probe.

The present invention relates to a plasma processing apparatus in which it is possible to efficiently perform maintenance of a processing chamber. A plasma processing apparatus 1 has a processing chamber 11 including a lower chamber 12 and an upper chamber 13, a platen 20 on which a silicon substrate K is placed, a processing gas supply device 27, coils 32, high-frequency power supply unit for coil 33, an elevating board 41 with a through hole 41a provided to be vertically movable, an elevating mechanism 42 for supporting and moving up and down the elevating board 41, and a fixing mechanism 46 for fixing the upper chamber 13. The fixing member 46 is configured from a fixing board 47, first fixing bolts 48, 49 for connecting and fixing an top plate 16 to the elevating board 41 using the fixing board 47, second fixing bolts 50 for fixing a flange portion 32b of a holding member 32 to an annular plate 14, and third fixing bolts 51 for fixing the annular plate 14 to a sidewall 12a of the lower chamber 12.

An impedance matching device is provided, for which the electric characteristics at an output terminal are accurately analyzed. The matching device is provided with an input detector for detecting RF voltage and current at the input terminal, and an output detector for detecting RF voltage outputted from the output terminal. The matching device also includes a controller for achieving impedance matching between a high frequency power source connected to the input terminal and a load connected to the output terminal. The impedance matching is performed by adjusting variable capacitors based on the detection data supplied from the input detector. When the impedance of the power source is matched to that of the load, the controller calculates the output impedance, RF voltage and RF current at the output terminal, based on the adjusted capacitances of the capacitors, a pre-obtained reactance-impedance data and the detection data supplied from the output detector.

An etching apparatus is provided, in which a plurality of electrodes are disposed for placing a substrate, high-frequency power sources as many as electrodes are provided, and the electrodes and the high-frequency power sources are connected to each other independently. Among a plurality of electrodes, a high-frequency power applied to an electrode disposed below the central portion of the substrate and a high-frequency power applied to electrodes disposed below comer portions of the substrate are controlled respectively, whereby in-plane uniformity of etching can be enhanced.

A treatment apparatus to treat a tissue in a body cavity is disclosed. The apparatus comprises a base disposed in the vicinity of a tip-end portion of an endoscope, and an in-tissue inserting portion including a base end supported by the base and a tip end insertable in the tissue in the body cavity in a direction substantially parallel to the surface of the tissue, and extending to the tip end from the base end in a tapered shape. The in-tissue inserting portion has an inner side disposed in the vicinity of the surface of the tissue when inserted into the tissue. The apparatus further comprises a high-frequency electrode, for treating the tissue, supported by the base and disposed in the vicinity of the inner side of the in-tissue inserting portion, and a cable which supplies power to the high-frequency electrode from a high-frequency power source outside the body.

A substrate supporting structure (50) for semiconductor processing, comprising a mounting table (51) for placing a processed substrate (W) disposed in a processing chamber (20), wherein temperature control spaces (507) for storing the fluid used as a heat exchange medium are formed in the mounting table (51), a conductive transmission path (502) is disposed to lead a high frequency power to the mounting table (51), and flow channels (505, 506) feeding or discharging the heat exchange medium fluid to or from the temperature control spaces (507) are formed in the transmission path (502).

An intensity distribution of an electric field of a high frequency power used for generating plasma is controlled by using an electrode made of a homogeneous material and a moving body. There is provided a plasma processing apparatus for introducing a processing gas into an evacuable processing chamber 100 and generating plasma by a high frequency power and performing a plasma process on a wafer W by the plasma. The plasma processing apparatus includes a dielectric base 105a having a multiple number of fine holes A; a varying member 200 as the moving body provided with a multiple number of rod-shaped members B capable of being inserted into and separated from the fine holes A; and a driving mechanism 215 configured to drive the varying member 200 to allow the rod-shaped members B to be inserted into and separated from the fine holes A.

Electrosurgical methods and apparatus for treating tissue at a target site of a patient. An electrosurgical instrument includes a shaft, having a shaft distal end and a shaft proximal end, and an electrode assembly disposed at the shaft distal end. The electrode assembly includes at least one active electrode disposed on an electrode support. The instrument is adapted for coupling to a high frequency power supply or electrosurgical generator. Each active electrode is adapted for removing tissue from a target site and/or for localized coagulation of the target tissue. In one embodiment, the instrument is adapted for laparoscopic procedures.

An electrosurgical device for treating a body tissue with a high-frequency power includes an electrode for exposing the body tissue to the high-frequency power for treatment, and a high-frequency cautery power supply having a control circuit that outputs a high-frequency power generator for outputting the high-frequency power to the electrode. The control circuit of the high-frequency cautery power supply includes a timer for measuring output time and suspension time of the high-frequency power applied to the body tissue, a counting unit for counting the number of output of the high-frequency power, an impedance detector for detecting an impedance of the body tissue in the coagulated state thereof when the body tissue is treated using the high-frequency power applied from the electrode, an impedance comparator for comparing the impedance of the coagulated tissue detected by the impedance detector with an impedance predetermined for the purpose of the treatment of a region to be treated, and a high-frequency power switch for switching the output of the high-frequency power generator.

A high-frequency power supply system includes an anomaly detector 3 which detects an anomaly occurring in a circuit on the side of a load L as from an outputting end A of a high-frequency power source 1. The anomaly detector 3 includes a first detector 21 which detects a voltage value Vf of a high-frequency forward wave, a second detector 22 which detects a voltage value Vr of a high-frequency reflected wave, a reflection coefficient calculator 23 and a differentiator 24 which calculate a reflection coefficient differential value dΓ/dt from the forward wave voltage value Vf and the reflected wave voltage value Vr, and an anomaly determiner 25 which determines of an occurrence of an anomaly based on the reflection coefficient differential value dΓ/dt. When the anomaly detector 3 outputs an anomaly detection signal to the high-frequency power source 1, high-frequency power source 1 stops its power output operation.

A non-contact power supply system includes a power supply device for transmitting high frequency power and a load device which receives the high frequency power in a non-contact mode by electromagnetic induction to supply it to a load. The power supply device includes a power transmission unit having a primary power coil and an inverter circuit, an inquiry unit having at least one primary signal coil and an oscillation circuit, a signal detection unit and a control unit. The load device includes a power reception unit having a secondary power coil magnetically coupled to the primary power coil and a power conversion unit, a secondary signal coil magnetically coupled to the primary signal coil, and a response unit which is operated by electromotive force induced in the secondary signal coil. The control unit stops power transmission when no signal is detected and executes power transmission which a signal is detected.

The reliability of a plasma processing apparatus can be improved, and the yield of plasma processing can be improved. A plasma etching apparatus 100 has a susceptor ring 113 covering the surface of a sample stage, a conductor ring 131 disposed in the interior of the susceptor ring 113 and to which second high frequency electric power is supplied from a second high frequency power source, and an electric power supply connector 161 configuring a path for supplying the second high frequency electric power to the conductor ring 131. Further, the electric power supply connector 161 includes a plate spring 135 disposed in the interior of an insulating boss 144 disposed in a through hole 120c of the sample stage and having resiliency in such a manner that the plate spring 135 is connected to an upper terminal 143 and a lower terminal 145, is biased in an up-down direction P, and is expanded and contracted.