404 results about "Abnormal discharge" patented technology

A titanium sputtering target that contains a concentration of oxygen in an amount of 20 ppm or less and has a maximum grain diameter of 20 mum or less. The target permits a sputtering operation to be accomplished substantially free from the formation of particles or the occurrence of an abnormal discharge phenomenon. In addition, the target contains a reduced amount of contaminants and is soft.

To shorten time for an abnormal discharge test and time for cleaning; and to reduce the amount of drain ink used at the time of the abnormal discharge test and the cleaning. A liquid drop discharging apparatus comprising: a plurality of nozzles that discharge liquid drops; a sensor that detects a malfunctioning nozzle at which abnormal discharge occurs when the liquid drop is supposed to be discharged therefrom; and a controller that determines whether the liquid drop is discharged or not from each of the nozzles on the basis of image data, the controller causing the sensor to detect the malfunctioning nozzle among the nozzles that are determined to discharge the liquid drops on the basis of the image data.

The invention provides a deep brain stimulation FPGA experimental platform of a basal ganglia and thalamencephalon network for the parkinson's disease. The experimental platform comprises an FPGA development board and an upper computer, which are connected with each other; the FPGA development board is used for realizing a basal ganglia and thalamencephalonneuron network model and a deep brain stimulation controller; the upper computer is used for designing an upper computer software interface and being communicated with the FPGA development board. The experimental platform has the benefits that as an animal-free experiment means of a biological neural network, and on the basis of the high-speed computation FPGA neuron network, the experimental platform realizes the modeling of the neuron network of a complex parkinson's disease focus area, and the neuron network model can be consistent with real biological neuron on a time scale. The platform provides a visual research platform, closer to the real neuron network, for researching the discharging mechanism of the parkinson's disease and the abnormal discharging mode of the basal ganglia and thalamencephalonneuron network controlled by deep brain stimulation, and has a significant practical value in researching the treatment of the parkinson's disease.

In a plasma processing apparatus which includes a chamber (1) equipped with a wafer stage (3) for mounting thereon a substrate (2) to be processed, and which processes the substrate (2) by exposure to a plasma (4), a photon detection sensor (5) for measuring an ultraviolet-light-induced current is placed on a circumferential portion of a substrate mounting surface (3a) of the wafer stage (3) so that the occurrence of an abnormal discharge can be detected, in real time, from a change in the output of the photon detection sensor (5).

A plasma processing apparatus having an evacuation ring with high plasma resistance and capable of minimizing abnormal discharge is provided. A processing chamber 100 includes a ceiling unit 110 at which an upper electrode 112 is provided and a container unit 120 having a lower electrode 122 provided to face opposite the upper electrode 112, on which a substrate can be placed. An evacuation ring 126 is provided around the lower electrode 122 so as to divide the space in the processing chamber 100 into a plasma processing space 102 and an evacuation space 104. At the evacuation ring 126, through holes 126a and blind holes 126b which are fewer than the through holes 126a and open toward the plasma processing space 102 are formed. An insulation coating constituted of Y₂O₃ is applied onto the surface of the evacuation ring 126 towards the plasma processing space 102.

The present apparatus comprises a vacuum process chamber 100 that contains an upper electrode 110 having a conductive plate 115 with gas supply holes for supplying a process gas and a lower electrode 130 having a platform on which a sample is to be mounted; process gas supply means 117 for supplying the process gas to the gas supply holes in the upper electrode 110 and exhaust means 106 for exhausting the vacuum process chamber; a high frequency power supply 121 for applying a high frequency power to the upper electrode to generate a plasma between the upper and lower electrodes; a high frequency bias power supply 122 for applying a high frequency power to the upper electrode to generate a direct current bias potential in the upper electrode; and abnormal discharge determination means 152 for determining whether an abnormal discharge has occurred or not based on the direct current bias potential generated in the upper electrode.

The present invention relates to a plasma display apparatus and method of driving the same, wherein erroneous discharge, miss-discharge and abnormal discharge are prevented, dark room contrast is increased, and operational margin is widened. According to the plasma display apparatus and driving method thereof, a negative voltage is applied to a first electrode, and a positive voltage is applied to a second electrode, whereby wall charges of a positive polarity are accumulated on the first electrode and wall charges of a negative polarity are accumulated on the second electrode, within discharge cells during a pre-reset period. The discharge cells are then initialized using the wall charge distribution of the discharge cells during a reset period.

The invention provides an oxide sintered body which takes the zinc oxide as main components and further includes aluminum and gallium, as well as a production method thereof. The invention comprises targets which can produce no abnormal discharge and can form membranes continuously and long-time with spurting method, transparent electric membranes with the advantages of low resistance, high transmission performance and high quality; and solar batteries with a high conversion rate. The oxide sintered body includes zinc, aluminum and gallium, actually consisting of crystal phases of wurtzite zinc oxide phase and spinel lithium manganese oxide phase. The invention is characterized in that (1) the aluminum and the gallium contents (Al+Ga)/(Zn+Al+Ga) of the oxide sintered body are 0.3 to 6.5 atom percentages by atom quantity, and the aluminum and the gallium contents (Al+Ga)/(Zn+Al+Ga) of the oxide sintered body are 30 to 70 atom percentages by atom quantity; (2) the aluminum contents of the spinel lithium manganese oxide phase are 10 to 90 atom percentages by atom quantity.

The battery pack according to the present invention is to avoid any trouble or the like of the primary or secondary battery inside the battery pack with a simple mechanical construction when a load is intermittently connected between the external terminals of the battery pack. For this end, the battery pack includes at least the battery cell and a protection circuit for shutting off overcurrent discharge and features in the provision of shut-off holding means and releasing means. The shut-off holding means maintains discharge shut-off condition after abnormal discharge shut-off by shorting or connecting a low resistance between the external plus terminal and the external minus terminal from outside of the battery pack. The releasing means releases the shut-off condition of the shut-off holding means when a predetermined voltage is applied between the external plus terminal and the external minus terminal.

The invention discloses a self-discharge detection method for lithium iron phosphate batteries, which relates to the technical field of screening of lithium batteries. The self-discharge detection method is characterized in that the batteries are fully charged, and placed in a uniform magnetic field with magnetic intensity ranging from 0.01T to 1.3T, self-discharge of the batteries is accelerated by the aid of an effect of the high-intensity magnetic field to the lithium iron phosphate batteries, the lithium iron phosphate batteries are taken out from the high-intensity magnetic field after standing in the high-intensity magnetic field for 1 day to 15 days, self-discharge rates of the shelved batteries are tested after the batteries are degaussed, and batteries with abnormal discharge properties can be selected according to actually measured data of self-discharge rates. The method is used for screening the self-discharge properties of the lithium batteries, disqualified batteries can be selected within a short period of time, and the method has an important popularization value.

In a plasma processing apparatus having an electrostatic chuck for holding a semiconductor wafer by an electrostatic adsorption force and a DC power supply for applying an electrostatic adsorption voltage to the electrostatic chuck, abnormal discharge in plasma is suppressed by providing the apparatus with a signal detector that detects a foresee signal that foresees occurrence of abnormal discharge in plasma, and a controller that controls ESC leakage current based upon the foresee signal. If the foresee signal is outside a prescribed range, control is exercised so as to reduce the absolute value of the electrostatic adsorption voltage, thereby suppressing the occurrence of an abnormal discharge.

According to the present invention, since the inside of a hole formed in a sidewall of a process vessel of a plasma processing unit is filled with a dielectric, a propagation rate of the electromagnetic wave to a pickup antenna is improved when an electromagnetic wave generated due to abnormality in plasma such as abnormal discharge is to be detected via the hole. Accordingly, it is possible to improve detection sensitivity without any change in size or length of the hole. Consequently, abnormal discharge in plasma processing can be detected with high accuracy.

An image forming apparatus, includes: a plurality of image forming stations each including an electrostatic latent image carrier, a static eliminator that eliminates charges on the electrostatic latent image carrier, and a charging member that is arranged to face the electrostatic latent image carrier while defining a specified gap; a bias applicator that collectively applies charging bias voltages including alternating-current components to the charging members provided in collective bias image forming stations, the collective bias image forming stations being at least two of the plurality of image forming stations; a current sensor that collectively detects currents flowing in the charging members provided in the respective collective bias image forming stations; and a detector that detects an abnormal discharge in the gap between the electrostatic latent image carrier and the charging member based on a current detection result by the current sensor, wherein the detector selects one of the collective bias image forming stations as a selected image forming station, and determines presence or absence of the abnormal discharge in the gap between the electrostatic latent image carrier and the charging member in the selected image forming station based on the current detection result by the current sensor when the bias applicator applies the charging bias voltages to the charging members in the respective collective bias image forming stations while causing the static eliminator provided in the selected image forming station to operate and causing the static eliminators provided in the collective bias image forming stations other than the selected image forming station to stop operating.

The present invention is directed to an apparatus for suppressing abnormal electrical discharge used for vacuum equipment which supplies power from a high-frequency power source to a plasma reaction chamber and executes a film formation process, provided with a power controller for controlling the high-frequency power source based on a deviation between a power command value and a power feedback value, and a cutoff controller for cutting off the power supply from the high-frequency power source to the plasma reaction chamber, based on a detection of the abnormal electrical discharge within the plasma reaction chamber. The cutoff controller exercises a first handling cutoff control and a second handling cutoff control, each having a different cutoff time. The first handling cutoff allows ions to remain in the plasma reaction chamber, and exercises the cutoff control over the high-frequency power source within a time duration which allows an arcing element to disappear. On the other hand, the second handling cutoff control exercises cutoff control over the high-frequency power source within a time range which allows abnormal arc ions to disappear. Accordingly, it is possible to supply power to plasma stably.

A substrate processing apparatus (10A) using a microwave plasma is disclosed wherein an inner partition wall (15) is provided within a process chamber (11) so that the inside of the process chamber (11) is divided into a space (11A) where a substrate to be processed is housed and a space (11B) which is defined by the inner partition wall (15) and the outer wall of the process chamber (11). By having such a structure, contamination of the substrate by a gas separated from the sealing material and contamination of the substrate caused by abnormal discharge can be prevented, thereby enabling clean processing of the substrate.

A plasma processing apparatus including a chamber having an inner wall with a protective film thereon and a sample stage disposed in the chamber in which plasma is generated by supplying high-frequency wave energy to processing gas to conduct plasma processing for a sample on the sample stage using the plasma. The apparatus includes a control device which determines, based on monitor values of a wafer attracting current monitor (Ip) to monitor a current supplied from a wafer attracting power source, an impedance monitor (Zp) to monitor plasma impedance viewed from a plasma generating power source, and an impedance monitor (Zb) to monitor a plasma impedance viewed from a bias power supply, presence or absence of occurrence of an associated one of abnormal discharge in inner parts, deterioration in insulation of an insulating film of a wafer attracting electrode, and abnormal injection in a gas injection plate.

The invention provides a machining method of a target assembly. The method comprises the steps that the sputtering target assembly is provided and comprises a target backboard, and aluminum is contained in target materials; and after the surface of the target backboard is subjected to the turning process, the surface, obtained after the turning process, of the target backboard is subjected to the polishing process at least two times. By means of the polishing process, pores in the surface of the target backboard are closed, the target backboard has the antioxidation function under the natural condition, and therefore the problem that the electric conductivity of the target backboard is reduced due to oxidation of the target backboard is avoided, then the phenomenon of abnormal discharge or outage of a sputtering target in the sputtering process is avoided, and the quality of the sputtering target is guaranteed.