The invention is a method for preparing focal plane (FPA) of a quantum well infrared probe (QWIP), starting with two heterogeneous wafers, silicon wafer and GaAs wafer, where the silicon wafer and the GaAs wafer are made with a silicon-base read integrated circuit, and terminating layer, lower electrode layer, quantum well layer, upper electrode layer, and 2D grating, respectively; firstly using the chemical-mechanical flattening process to make the surface of the silicon wafer smooth, flat and clean and then aligning the upper electrodes of the smooth, flat and clean GaAs wafer with the corresponding metallic electrodes on the silicon wafer, using low-temperature heterogeneous wafer bonding method to bond the two wafers and make low-temperature thermal treatment until they are bonded together, then thinning the substrate of the GaAs wafer, selectively eating off the residual substrate, using corrosive solution to eat off the terminating layer, and finally completing the connection between the QWIP and the corresponding electrodes of the silicon-base read integrated circuit to obtain the productí¬FPA of QWIP. The method has the advantages of low cost, strong mechanical strength and good reliability.