7829results about How to "Increase width" patented technology

Depth maps are generated from a monoscopic source images and asymmetrically smoothed to a near-saturation level. Each depth map contains depth values focused on edges of local regions in the source image. Each edge is defined by a predetermined image parameter having an estimated value exceeding a predefined threshold. The depth values are based on the corresponding estimated values of the image parameter. The depth map is used to process the source image by a depth image based rendering algorithm to create at least one deviated image, which forms with the source image a set of monoscopic images. At least one stereoscopic image pair is selected from such a set for use in generating different viewpoints for multiview and stereoscopic purposes, including still and moving images.

A shower head for adjusting distribution of a reactant gas in a process region of a semiconductor manufacturing reaction chamber, wherein a top plate has a gas port for introducing the reactant gas into the reaction chamber; a face plate, having through holes, disposed opposite the process region; a first baffle plate, having through holes, disposed between the top plate and the face plate and capable of moving up or down, wherein the first baffle plate has a top surface that defines a first gap for forming a first lateral flow passage; a second baffle plate, having through holes, disposed between the first baffle plate and the face plate and capable of moving up or down, wherein the second baffle plate has a top surface that defines a second gap for forming a second lateral flow passage; and a gap controller for determining widths of the first and second gaps.

A flexible display substrate, a flexible organic light emitting display device, and a method of manufacturing the same are provided. The flexible display substrate comprises a flexible substrate including a display area and a non-display area extending from the display area, a first wire formed on the display area of the flexible substrate, and a second wire formed on the non-display area of the flexible substrate, wherein at least a part of the non-display area of the flexible substrate is curved in a bending direction, and the second wire formed on at least a part of the non-display area of the flexible substrate includes a first portion formed to extend in a first direction and a second portion formed to extend in a second direction.

A system and method capable of performing multiple types of non-invasive tomographic techniques. The system is capable, via electronic control, of detecting and imaging materials within a volume using electrical capacitance, displacement phase current, magnetic inductance, and magnetic pressure sensing. The system is also able to control the amplitude, phase, and frequency of individual electrode excitation to increase imaging resolution and phase detection. This allows many dimensions of non-invasive data to be captured without the need for multiple instruments or moving parts, at a high data capture rate.

A floating gate memory cell's channel region (104) is at least partially located in a fin-like protrusion (110P) of a semiconductor substrate. The floating gate's top surface may come down along at least two sides of the protrusion to a level below the top (110P-T) of the protrusion. The control gate's bottom surface may also comes down to a level below the top of the protrusion. The floating gate's bottom surface may comes down to a level below the top of the protrusion by at least 50% of the protrusion's height. The dielectric (120) separating the floating gate from the protrusion can be at least as thick at the top of the protrusion as at a level (L2) which is below the top of the protrusion by at least 50% of the protrusion's height. A very narrow fin or other narrow feature in memory and non-memory integrated circuits can be formed by providing a first layer (320) and then forming spacers (330) from a second layer without photolithography on sidewalls of features made from the first layer. The narrow fin or other feature are then formed without further photolithography in areas between the adjacent spacers. More particularly, a third layer (340) is formed in these areas, and the first layer and the spacers are removed selectively to the third layer. The third layer is used as a mask to form the narrow features.

Plasma damage in ultra low k dielectric materials during formation of a dual damascene metal interconnect structure is reduced by providing a protective spacer on sidewalls of a line trench. A densified trench bottom region may be additionally formed directly beneath an exposed horizontal surface of the line trench. The protective spacer and/or the densified trench bottom region protects an ultra low k intermetal dielectric layer from plasma damage during a plasma strip process that is used to remove a disposable via fill plug employed in the dual damascene metal interconnect structure.

In one aspect, the present disclosure relates to a surgical device including an anchor body having an opening, the anchor body having a copolymer composition including polylactide-co-glycolide and calcium carbonate, wherein the calcium carbonate comprises more than 30% but less than 40% of the weight of the composition; and a flexible member passing through the opening, wherein deformation of the device occurs at body temperature. The present disclosure also relates to an oriented polymer material having a copolymer composition including a polylactide-co-glycolide and calcium carbonate, the calcium carbonate comprising more than 30% but less than 40% of the weight of the composition, wherein the material changes shape upon introduction to an environment having a temperature that is lower than a relaxation temperature of the material. A method of repairing soft tissue and other surgical devices are also disclosed.

A vacuum cleaner comprises adjacent housings, which contain the filtration and suction fan motor assembly of the vacuum cleaner.

A mitral annuloplasty ring with an inner core and an outer band located therearound is disclosed. The ring has an anterior region, a posterior region opposite the anterior region, and two side regions therebetween. A cross-sectional width dimension of the outer band is greater in the posterior region of the ring than in the anterior region. A cross-sectional width dimension of a semi-flexible core is thinner in the anterior and posterior regions than in the side regions so that the mitral ring is more rigid in the anterior-posterior direction. A tricuspid annuloplasty ring of the invention has an inner core and an outer band located therearound. The inner core has an anterior region separated across a gap from a septal region, and a posterior region. A cross-sectional width dimension of the outer band is greater in the septal region than either the anterior or posterior regions.

A medical foot implant (1) with a fastening section (2) for fixing the foot implant (1) to two adjacent bones or bone segments and with a wedge section (3). The wedge section (3) has an end-side tip (12), in a plan view at least approximately punctiform, for easier introduction of the foot implant (1) into bone or into tarsometatarsal joint.

A T-shaped pole tip portion of an upper pole of a write element for a magnetic disk drive is provided. One end of the pole tip portion, constituting the bottom of the “T,” forms a narrow nose segment at an air bearing surface, while a wing segment at the opposite end of the pole tip portion constitutes the cross-bar top of the “T.” A transition segment extends between the nose segment and the wing segment. A yoke portion of the upper pole includes a surface that is parallel to the air bearing surface and recessed therefrom by a P3R depth. The transition segment does not widen significantly until after the P3R depth, accordingly, the wing segment is recessed from the air bearing surface by more than the P3R depth.

An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.

A subsonic aircraft having backswept lifting wings is equipped with individually rotatable winglets at the wing tips thereof, in order to reduce drag during cruise flight, to minimize the dangers posed by wing tip vortices to following aircraft during take-off and landing, and to minimize the total wingspan during ground operations, with respective different positions of the winglets. A streamline-shaped rotation body made up of at least two individually rotatably supported rotation segments is mounted on the wing tip of each lifting wing. A respective winglet is mounted on each respective rotation segment. Each rotation segment with its associated winglet is individually rotatable about a rotation axis of the rotation body extending substantially parallel to the aircraft lengthwise axis. Thereby, each winglet is individually pivotable to any selected pivot angle relative to a horizontal plane extending through the rotation axis. Each winglet and its associated rotation segment is rotatable through an angular range between maximum end limits of at least +90° (vertically upward) and at least -90° (vertically downward) relative to the horizontal plane.

An apparatus for measuring the coordinates of a point on the surface of an object comprises a projection system for projecting a beam of energy onto the surface of the object, a receiving system for receiving reflected beam energy from the target surface, and a detector for detecting the received energy. The projection system comprises a beam expander for expanding the width of the beam, and a focussing device for focussing the projected beam. The position of the reflected beam energy at the detector provides a measure of the range of the point on the target surface using triangulation and the direction of the projected beam provides the x and y coordinates. The focussing device can be controlled to vary the focal length of the projected beam and to control the beam size at the target object to vary the area of the target surface illuminated by the beam and thereby to control the resolution of the measurements.

Each golfer (1-3) on a golf range (4) has an individual display (12-14) showing at least a predicted outcome of each of his/her shots, and a launch-analyser (6-8) to measure velocity vectors of the ball and/or club at strike for central-computation (9) of the prediction. Vibration and piezo-cable sensors (54,55;68,69) at instrumented targets (5;41-45,47) distributed throughout the range (4), detect the presence of balls arriving in their respective locations for matching with launched balls using the computed predictions and probability; active or passive radio-frequency identification and location of balls may also be used. Where a match is found, error between predicted and actual outcome is applied to adaptive correction of the prediction-computing process, and the actual outcome is displayed to the golfer instead of the prediction. Ball and/or club velocity vectors, and ball spin, at launch are measured from light changes occurring in detection planes (96,97;105;114-117;134;144-146) defined by slit apertures (94,95;104), and resulting from retro-reflection from ball (91;110;131) and/or club (130).

A fabrication method of a semiconductor wafer can fill trenches formed in a semiconductor substrate with an epitaxial film with high crystal quality without leaving cavities in the trenches. The trenches are formed in the first conductivity type semiconductor substrate. Planes exposed inside the trenches are made clean surfaces by placing the substrate in a gas furnace, followed by supplying the furnace with an etching gas and carrier gas, and by performing etching on the exposed planes inside the trenches by a thickness from about a few nanometers to one micrometer. The trenches have a geometry opening upward through the etching. Following the etching, a second conductivity type semiconductor is epitaxially grown in the trenches by supplying the furnace with a growth gas, etching gas, doping gas and carrier gas, thereby filling the trenches. Instead of making the trenches slightly-opened upward, their sidewalls may be made planes enabling facet formation.