16results about How to "Reduce edge effects" patented technology

The application discloses a kind of parallel coupling self-imaging external cavity coherent array semiconductor laser, comprising: semiconductor laser chip array, light transmission dielectric layer and external cavity reflection layer;Semiconductor laser chip array includes multiple light emitting units, light transmission dielectric layer and external cavity reflection layer form laser self-imaging external cavity;The non-light emitting area of semiconductor laser chip array light emitting surface is coated with high reflection film, and the feedback light that cannot be injected into the light emitting unit due to incomplete self-imaging at the edge of semiconductor laser chip array can oscillate in self-imaging external cavity multiple times to reform the self-imaging that can be completely injected into the light emitting unit.The application improves the injection of laser outside the light emitting area, can efficiently parallel coupling all light emitting units including edge in chip array, eliminate the edge effect of chip array generated by self-imaging external cavity feedback, enhance the feedback efficiency of self-imaging external cavity, obtain the coherent array laser output of high parallel coupling efficiency, high efficiency optical mutual injection.

The application discloses a high-pressure injector for improving injection process sensing precision, relates to medical devices, and aims at the problem of edge effect of reflected light of a reflecting sheet in the prior art. The reflecting sheet is characterized in that the edge thereof is outwardly convex towards an infrared emission detection array. The advantage of the application is that the infrared light reflected at the edge will have an obvious mutation effect after the reflecting surfaces at both ends of the reflecting sheet are made outwardly convex, thereby reducing the edge effect in the original reflected light. The light intensity curve obtained by the infrared emission detection array will have an obvious mutation at the edge of the interval, and the electric control program of the machine head can easily and accurately intercept the required position interval for midpoint value taking.

The utility model provides a modularized fluorine ion exchange column, which adopts a column body structure formed by connecting a plurality of sections of flanges to realize height adjustability and adapt to different fluorine concentration and flow requirements. Spiral flow guide ribs are arranged in the column to guide wastewater to spirally flow, fluid distribution is optimized through centrifugal force, and the fringe effect is reduced; the assembling precision between the columns is ensured through a concave-convex positioning mechanism, and the corrosion resistance is enhanced by matching with a polytetrafluoroethylene lining. The system integrates a water distribution plate and funnel combined structure, realizes flow equalization through groove water distribution holes, eliminates a bias flow phenomenon, and improves the resin utilization rate. And the saturation of the resin can be observed at any time through fluorine ion color-changing exchange resin and an observation window. The resin bracket is of a pull ring type quick release structure, and quick maintenance is achieved through a tap bolt and a sealing ring annular groove. According to the device, through modular combination, flow field optimization and visual monitoring, the fluorine ion deep purification efficiency and the operation convenience are remarkably improved.

The application discloses an acceleration sensor and a manufacturing method thereof. The acceleration sensor comprises a first capacitor, a second capacitor, a third capacitor and a fourth capacitor on a substrate. The first capacitor comprises a second detection mass and a first detection electrode. The second capacitor comprises a first detection mass and a first detection electrode. The third capacitor comprises a second detection mass and a second detection electrode. The fourth capacitor comprises a first detection mass and a second detection electrode. The first detection electrode and the second detection electrode are located between the first detection mass and the second detection mass and are independent of each other and located in the same plane. The application forms a full-bridge capacitor detection structure by the first detection mass, the second detection mass, the first detection electrode and the second detection electrode located between the first detection mass and the second detection mass, which can effectively reduce parasitic capacitance, optimize noise, improve stability and sensitivity.

The application discloses a laser shock peening method based on partition iteration double constraint, and relates to the technical field of laser processing. The method comprises the following steps: dividing a to-be-processed surface area of a to-be-processed component into a plurality of subareas, and setting laser shock points in each subarea; performing partition iteration double constraint traversal shock; in each iteration, firstly randomly disturbing the macro processing sequence of all subareas, then selecting one point from the unshocked points of each subarea, arranging the selected points according to the disturbed subarea sequence to form a shock subsequence of the current iteration; repeating the iteration until all the points are traversed to form a first layer of shock strengthening layer; and continuously repeating the superposition until a preset shock layer number is reached. The application can significantly inhibit the anisotropy of residual stress and the edge effect, and realize uniform strengthening.

The application relates to the field of advanced optical manufacturing technology, in particular to an optical element processing method realized by using a large-size ion source, which comprises the following steps: surface shape detection and surface shape error analysis, outputting a target removal amount distribution and an ion beam removal function, obtaining the removal function of the ion beam flux by using a spot method, calculating the residence time distribution according to the removal amount distribution and the removal function of the ion beam flux, obtaining the spatial distribution of the ion beam flux density, and adjusting the uniformity of the ion beam flux emitted by the ion source; controlling the ignition of the aperture ion source, processing the ion beam flux emitted by the ion source according to the residence time distribution; after processing, the surface shape of the optical element is detected and the surface shape error is analyzed, and if the requirement is met, the processing is completed. The ion source with an aperture of 220 mm is used for surface correction, the uniformity of the ion source beam is optimized, the ion source beam is in a Gaussian distribution, and precise removal of a large-aperture high-slope optical element to be processed is realized.

This application provides a spraying device, relating to the field of semiconductor technology, comprising: a chamber substrate having opposing first and second end faces, the chamber substrate including at least two jet chambers, each jet chamber having a jet outlet on the first end face; the at least two jet chambers including a cylindrical central jet chamber and at least one annular jet chamber arranged sequentially around the central jet chamber, with an annular isolation plate disposed between adjacent jet chambers; an air inlet assembly disposed on the second end face, the air inlet assembly communicating with the jet chambers; at least two stages of flow equalization and mixing structures, stacked between the first and second end faces, with a flow equalization plate disposed between the flow equalization and mixing structures, the flow equalization and mixing structures communicating between the air inlet assembly and the jet chambers. This application sprays process gas into different regions of the wafer in the radial direction through the jet outlets of different jet chambers, independently controlling the gas flow rate and ratio sprayed onto the wafer in the radial direction, thereby reducing the edge effect of the wafer.

The utility model relates to an igniter for a sintering machine, which is applied to the technical field of sintering production, solves the problems that the edge effect is easy to generate on the edge of the existing sintering pallet, and the productivity of the sintering machine and the quality of sintered ore are restricted. An ignition assembly I and an ignition assembly II are sequentially arranged on the upper end face of the furnace body in the running direction of the sintering pallet, the ignition assembly I comprises at least two edge ignition nozzles, and the two edge ignition nozzles are oppositely arranged on the two sides of the furnace body in the transverse direction. The two edge ignition nozzles are used for igniting sintering materials laid on the edges of the two transverse sides of the sintering pallet, the ignition assembly II comprises a plurality of first ignition nozzles, the first ignition nozzles are distributed on the furnace body in at least one row, and the ignition assembly further comprises a gas source assembly for supplying gas to the edge ignition nozzles and the first ignition nozzles; the method has the effects of increasing the thickness of a combustion layer, inhibiting the edge effect, improving the ignition strength of a mixture at the edge of the sintering pallet and effectively reducing the return rate of sintered ore.

The utility model relates to PCR plate technical field especially relates to a 96 hole PCR plate, including the plate body, the plate body evenly is provided with several reaction tubes, the hole wall thickness of reaction tube is linearly reduced along the radial distance from the center to the periphery, the hole wall of reaction tube includes plastic base body, heat conducting metal foil, insulating layer, the hole wall thickness is linearly reduced along the radial distance from the center to the periphery, can effectively reduce the thermal resistance, the reaction tube of periphery can be in contact with the heat source completely, reduces the thermal loss and appears the edge effect, and the heat conducting metal foil is inbedded in the reaction tube, and the plastic base body is combined and conducts heat, and the heat conducting metal foil does not contact with the reaction liquid directly, avoids the influence PCR reaction, can effectively improve the heat conducting performance of plastic base body simultaneously, and the heating rate is fast, effectively solves the heat loss difference, reduces the biological pollution risk.

The application discloses a pseudo-virtual element method for a small-scale tightly-coupled electric scanning array, which comprises the following steps: S1, performing period boundary debugging and determining basic unit parameters; S2, establishing a complete array comprising effective units (1) and pseudo-virtual elements (2), and performing small signal feeding on the pseudo-virtual elements (2) to determine the size of the pseudo-virtual elements (2) and small signal power; S3, setting the input impedance of the pseudo-virtual elements (2) as Z1, setting the input impedance of the effective units (1) as Z2, simultaneously connecting the virtual elements without adjacent effective units (1) to a preset load as real virtual elements (3), simulating the complete array, and fine-tuning structure parameters and the size of a power divider (4) to complete the design. The application can significantly suppress the performance deterioration caused by the edge effect, improve low-frequency standing wave and radiation performance, maintain array phase consistency and scanning performance, and is suitable for super wideband small-scale tightly-coupled electric scanning arrays and has strong engineering implementation.

This invention relates to the field of chemical mechanical polishing (CMP) pad technology, specifically to a highly hydrophilic and wear-resistant CMP polishing pad, its preparation method, and its application. The invention uses cyanosiloxane monomers as raw materials, preparing highly active carboxylate silsesquioxane powder through one-step alkaline hydrolysis, and achieving nanoscale uniform dispersion of this powder in polyurethane. After pre-treating the base fabric with an acid-base oscillating impregnation agent, the nanoscale uniformly dispersed slurry is coated onto the base fabric, and then solidified to obtain the target product. This invention solves the technical problems of difficulty in balancing hydrophilicity and wear resistance, and poor polishing uniformity in existing hydrophilic modification polishing pads. The polishing pad produced is used for wafer polishing, exhibiting less than 3% intra-wafer non-uniformity, fewer surface defects, and extended service life. The process of this invention is fully compatible with existing wet production lines for polyurethane polishing pads, requiring no additional equipment. The process is simplified, batch stability is strong, and industrial mass production is possible, adapting to the high-precision, low-defect polishing requirements of advanced semiconductor processes below 14nm.

The invention discloses a liquid metal battery electrode material separation device, and relates to the technical field of energy storage batteries, the liquid metal battery electrode material separation device comprises a fixed seat, a reaction cavity, a corundum crucible, a temperature control assembly, an electrolysis structure, an anti-dissipation structure, a collection structure, a negative electrode extraction pipe and a positive electrode extraction pipe; the fixed seat comprises a bottom plate and a heat insulation supporting seat; the heat insulation supporting seat is mounted at the top of the bottom plate; the invention also discloses a use method of the liquid metal battery electrode material separation device. According to the liquid metal battery electrode material separation device, through cooperation of the annular anode basket and the cathode rod in the center, the electric field edge effect can be eliminated, and the electrolysis uniformity is improved; in addition, directional separation of the dual-electrode metal is achieved through efficient conduction of the Mg-stabilized zirconia diaphragm on lithium ions and efficient blocking of the Mg-stabilized zirconia diaphragm on antimony and bismuth ions, and efficient and directional separation and recovery of the high-purity positive and negative electrode metal can be achieved by combining the density difference of the positive and negative electrode metal and a designed bimetal exclusive extraction path.

The application discloses a non-contact high-voltage measuring device with self-checking capability and a measuring method thereof. The device comprises an electric field sensing device, a signal conditioning circuit and a received signal processing device. The core of the electric field sensing device is two measuring electrode plates and a shielding electrode plate. The two measuring electrode plates are placed inside the shielding electrode plate and symmetrically distributed relative to the measured wire. Electrical insulation is realized between each electrode plate through insulating elastic material. The signal conditioning circuit is used to sample the voltage signals on the two measuring electrode plates capable of representing the electric field intensity and to amplify and filter the voltage signals. The received signal processing device is used to process and output the sampled voltage signals and to judge the correctness of the measurement data. The electric field sensing device of the application can effectively improve the accuracy of the measuring device and make the measuring device have self-checking capability, thereby improving the reliability of the measurement.

A mixture is placed in a cup hole of a cup body of the sintering cup, sintering grate bars are arranged at the end, away from a cup opening, of the cup body, gaps of the sintering grate bars communicate with the cup hole, and the air draft requirement in the sintering process is met. The material distribution pipe is movably inserted into the cup hole, the mixture is placed in the material distribution pipe and supported on the sintering grid section, a sealing groove is formed between the peripheral wall of the material distribution pipe and the cup hole, and the powder filling layer is filled in the sealing groove. The material distribution pipe can be pulled out after material distribution is completed, the powder filling layer can achieve automatic sealing between the mixture and the hole wall of the cup hole, the possibility that gaps exist between the mixture and the hole wall of the cup hole is effectively reduced, the edge effect caused by the gaps is reduced, the uniformity of the mixture in the sintering process is guaranteed, and the sintering quality is improved. The accuracy of parameters and results obtained by a sintering cup test is improved, and the technical problem that the accuracy of the results of the sintering cup test is not ideal enough is solved to a certain extent.

The invention discloses a terrace side wall lateral evaporation blocking control and yield increasing binary covering method and structure, and belongs to the technical field of dry farming water and soil conservation. In order to solve the problems of lateral migration of soil moisture and low edge yield caused by strong evaporation of terraced field ridges (side walls), the method adopts a'straw and sunscreen net 'binary coupling covering mode. The structure comprises a flat soil substrate layer, a diffusion resistance layer formed by crop straws, and a radiation decoupling and fixing layer formed by a black HDPE (High-Density Polyethylene) sunscreen net from inside to outside. According to the method, lateral evaporation is effectively inhibited and the transverse water potential gradient in the terrace is eliminated through multiple synergistic mechanisms such as radiation interception and cooling by the sunscreen net, water vapor diffusion resistance increase by the straw layer and near-surface wind speed weakening by the composite structure of the sunscreen net and the straw layer, so that soil moisture homogenization is realized, and the yield of crops at the edge of the terrace and the rainfall utilization efficiency of the system are remarkably improved. The method is low in cost, easy to construct, eco-friendly and suitable for dry farming terraced fields such as loess plateau.