The present disclosure relates to the technical field of piezoelectric materials, and disclosed is the use of a half-Heusler
alloy as a piezoelectric material. The half-Heusler
alloy has a
chemical formula of XYZ, where X= any one of Ti, Zr, Hf, V, Nb, Ta and Re or a
solid solution in any ratio thereof, Y= Fe, Co or Ni, and Z= Sn, Sb or Bi. The inventors have found through research that the above-mentioned half-Heusler
alloy can exhibit good piezoelectric properties, in which a
piezoelectric coefficient of 22 pC / N can be obtained at 300 K for a [111]-
cut single‑
crystal ZrNiSn
wafer material. In addition, the half-Heusler alloy exhibits a good
thermal stability and
structural stability in a temperature range from
room temperature to 1173 K, and has great potential for high-temperature piezoelectric application. Piezoelectric sensors prepared based on the half-Heusler alloy described above can generate a sub-mV
voltage response under a typical human pressing force, and can be used in the development of electronic devices such as piezoelectric sensors, piezoelectric vibration energy harvesters, and piezoelectric self-powered systems.