1404results about "Piezoelectric/electrostrictive/magnetostrictive devices" patented technology

The invention discloses a preparation method of a vertical comb-driven MEMS (Micro Electro Mechanical System) micromirror, which comprises the following steps of: forming a through alignment mark and a pre-etched comb structure on a device layer by using a first composite mask, and forming the through alignment mark and the pre-etched comb structure on the back surface of the device layer on a first substrate through a composite mask process, after the first substrate and the second substrate are bonded, the self-alignment composite mask of the comb tooth structure is aligned with the back face pre-etched comb tooth structure through the through alignment mark, high-precision alignment of the comb tooth structure is achieved, accumulated errors are avoided, and the yield of device preparation is improved.

The invention provides a manufacturing method of an MEMS device and the MEMS device, and the manufacturing method comprises the steps: providing a first wafer which is provided with a groove; a protective layer is arranged in the groove; providing a second wafer, and bonding the second wafer and the first wafer to seal the groove to obtain a first cavity; the second wafer is etched to form a comb tooth structure, and the protection layer is used for protecting the comb tooth structure. According to the embodiment of the invention, the protection layer is arranged in the first cavity of the first wafer as a buffer layer, so that when the second wafer is etched to form the comb tooth structure, the plasma backwash in the over-etching stage can be reduced, the comb tooth structure is further protected, the damage to the bottom of the comb tooth caused by the backwash of etching particles is reduced and solved, and the service life of the comb tooth structure is prolonged. Therefore, the mechanical strength and the anti-failure capability of the device are enhanced.

The invention provides a preparation method of an inertial sensor and the sensor. The preparation method comprises the following steps: sequentially forming a first cavity and a first oxide layer on a first silicon wafer; bonding the first silicon wafer and a second silicon wafer, wherein the second silicon wafer is a low-resistance silicon wafer; forming an inertia sensitive structure in the second silicon wafer; correspondingly forming a second cavity on a third silicon wafer, wherein the third silicon wafer is a low-resistance silicon wafer; bonding the third silicon wafer and the second silicon wafer; an isolation groove penetrating through the third silicon wafer is formed through etching, a conductive silicon column and an electric signal isolation ring are formed, and the conductive silicon column is connected with the inertia sensitive structure; and forming a sealing insulating layer on the surface of the third silicon wafer, and forming a signal lead-out pin in the sealing insulating layer. According to the scheme, thermal stress caused by thermal expansion coefficient mismatch among the three layers of wafers is reduced through an all-silicon wafer level packaging process, and the full-temperature characteristic of the device is greatly enhanced; and the preparation process flow is optimized, the process control difficulty is reduced, and the preparation cost is reduced.

The invention relates to the technical field of infrared sensors, in particular to a monolithic integrated MEMS out-of-plane thermopile chip and a preparation method thereof, and the thermopile chip comprises a substrate, and a bottom electrode, a thermocouple array, a top electrode and an optical radiation absorption layer which are sequentially arranged on the substrate; the thermocouple array is vertically arranged on the bottom electrode; the thermocouple array comprises a plurality of thermocouple pairs, and each thermocouple pair comprises an N-type thermocouple and a P-type thermocouple; the N-type thermocouple and the P-type thermocouple form a current and heat flow loop in an electric series connection and heat parallel connection mode. According to the invention, the bismuth telluride-based thermoelectric material with low thermal conductivity and high Seebeck coefficient difference is used as the thermocouple material of the out-of-plane thermopile chip, the heat conduction path of the out-of-plane thermopile chip is more direct, the temperature difference in the vertical direction can be directly utilized, and the higher response speed and high sensitivity are expected to be realized due to the more efficient thermal gradient.

The invention discloses a piezoelectric air cooling device based on a piezoelectric film PZT technology, and relates to the technical field of MEMS. The device adopts a two-layer packaging structure of a piezoelectric cantilever beam MEMS chip and a PCB (Printed Circuit Board) with a vent hole. A cantilever beam of the MEMS chip is integrated with an SOI top silicon layer and an ultrathin PZT driving stack, low rigidity and high driving force are achieved, and the surface of the cantilever beam is covered with a PDMS flexible sealing layer to achieve dynamic sealing. When the device works, the cantilever beam is driven to resonate in an ultrasonic frequency band, and efficient synthetic jet is generated at the vent hole by periodically changing the volume of the pump cavity. The technical bottleneck that miniaturization and high performance are difficult to consider at the same time is broken through, and the device has the advantages of being compact in structure, mute and efficient and is suitable for precise heat dissipation of miniature electronic equipment.

The invention provides an MEMS (Micro Electro Mechanical System) micromirror array chip, a module and optical scanning equipment. The MEMS micromirror array chip comprises a plurality of micromirror structures, a substrate, a vertical lead structure and a capacitance angle sensing structure, according to the micro-mirror array chip integrated with the capacitive sensor, array-level real-time angle detection, feedback control and high-precision scanning angle detection are realized, and the micro-mirror array chip is fast in driving and resistant to interference; meanwhile, the wiring density is reduced by frequency division multiplexing isolation signals; in addition, the application of a monolithic integrated capacitance angle sensor in a high-density micro-mirror array chip is realized by a thick substrate with a silicon through hole; and finally, the micromirror array chip of the monolithic integrated capacitance angle sensor is used for precision optical scanning equipment, a photoelectric angle detector is omitted, optical scanning high-precision real-time angle detection and feedback control, high-precision angle detection and high-speed scanning are realized, the use design is convenient, and the cost is low.

The invention provides a large-mirror-surface MEMS two-dimensional scanning micromirror which comprises a fast scanning shaft, a slow scanning shaft, a balance frame with multiple turns of coils, a micromirror surface and reinforcing ribs on the back face of the micromirror, the fast scanning shaft extends in the first direction, one end of the fast scanning shaft is connected with the micromirror surface, the slow scanning shaft extends in the second direction, and the other end of the fast scanning shaft is connected with the micromirror surface. The other end is connected with a balance frame with a plurality of turns of coils; the slow scanning shaft extends in a second direction perpendicular to the first direction, one end of the slow scanning shaft is connected with the balance frame with the multi-turn coil, and the other end of the slow scanning shaft is used for being connected with an external substrate; the balance frame with a plurality of turns of coils is of a hollow structure and is arranged around the mirror surface of the micro-mirror; the reinforcing ribs on the back face of the micro-mirror are of an oval hollow structure and are fixedly arranged on the lower surface of the mirror face of the micro-mirror, and the reinforcing ribs are connected in the first direction and the second direction to form a supporting structure. According to the structure, the rigidity of the mirror surface is greatly improved, and the capability of resisting external force interference is remarkably enhanced.

The invention provides an MEMS pressure sensor and a manufacturing method thereof, and an electronic device, and the method comprises the steps: providing a first substrate, forming at least two first pressure structures on the surface of the first substrate, each first pressure structure comprises a first electrode layer, a first sacrificial layer, a first supporting layer, a second electrode layer, a second supporting layer, and a first cavity, and a first release hole; a second substrate is provided, at least two second pressure structures are formed on the surface of the second substrate, and each second pressure structure comprises a third electrode layer, a second sacrificial layer and a second cavity; bonding the second supporting layer with the second sacrificial layer; the second substrate is removed to expose the third electrode layer, the third electrode layer and the second electrode layer form a variable capacitance structure, the second electrode layer and the first electrode layer form a reference capacitance structure, and the two variable capacitance structures and the two reference capacitance structures jointly form a Wheatstone bridge. According to the scheme, the measurement precision is improved, and the device performance is further improved.

The invention provides an MEMS pressure sensor, a manufacturing method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, forming a first pressure structure on the first substrate, and forming a second pressure structure on the second substrate; bonding the first pressure structure and the second pressure structure; the first substrate is removed, the first pressure structure and the second pressure structure jointly form a third pressure structure, the third pressure structure comprises a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer and a fifth electrode layer which are arranged at intervals from top to bottom, and a dielectric layer is formed between every two adjacent electrode layers; and cavities penetrating through the dielectric layers are formed in the dielectric layers. According to the scheme, the multiple electrode layers arranged from bottom to top are formed, the multiple electrode layers form the first capacitor, the second capacitor, the third capacitor and the fourth capacitor respectively, then the Wheatstone bridge is formed jointly, the measurement precision of the MEMS pressure sensor is improved, meanwhile, the plane size of the MEMS pressure sensor is reduced, and the integration level of the device is improved.

The invention relates to the technical field of semiconductor devices, in particular to an MEMS inertial sensor and a preparation method thereof, and the sensor comprises a first supporting substrate and a first wafer which are stacked; a first groove is formed in one side, close to the first wafer, of the first supporting substrate; the first wafer comprises a fixed electrode, the projection of the fixed electrode on the first supporting substrate is located in the first groove, and a gap is formed between the bottom surface of the first groove and the fixed electrode; and a supporting column which extends along the direction vertical to the first wafer and is connected with the fixed electrode is arranged in the first groove. On the premise of ensuring sufficient mechanical support, stray capacitance between the bottom electrode and the substrate is effectively reduced so as to adapt to engineering application requirements in diversified working condition environments.

A piezoelectric vibration element includes a piezoelectric piece having a main surface; an excitation electrode disposed on the main surface of the piezoelectric piece; and a connection electrode disposed on the main surface of the piezoelectric piece and electrically connected to the excitation electrode, wherein when the main surface of the piezoelectric piece is viewed in a plan, the piezoelectric piece has a through-hole in an area between the excitation electrode and the connection electrode, and wherein an internal wall of the through-hole located closer to the excitation electrode has at least four slopes.

The invention discloses an electroplating process method for preparing a deep-etching thick metal mask, and belongs to the technical field of micro electro mechanical system electroplating processes. Comprising the following steps: firstly, carrying out photoetching and patterning on the surface of a wafer by using positive photoresist; then, carrying out seed layer sputtering on the wafer subjected to pattern photoetching, and forming a to-be-electroplated region with a preset pattern through a stripping process; then, photoetching is carried out on the to-be-electroplated area through negative photoresist, and a thick photoresist layer with the thickness larger than that of a preset metal coating is formed; and finally, the electroplating area is electroplated, and the metal coating with the preset thickness is obtained. According to the method, the negative photoresist process is adopted, so that the transverse growth of the metal coating is effectively inhibited, the perpendicularity of the side wall of the metal coating is improved, and meanwhile, the damage to the surface of the wafer when the seed layer in the non-electroplating area is removed is avoided. The problems that mushroom-shaped protrusions are easily formed on the edge of a plating layer, crystal grains are coarsened and the like in the electroplating process of an existing electroplating method are solved.

A method for fabricating a MEMS device comprising the following steps: providing a first bonding surface (1) on a first substrate (2) with a first substrate doping; providing a second bonding surface (3) on a second substrate (4) with a second substrate doping; aligning and joining the first and second bonding surfaces (1, 3) by a Si-Si direct bonding process, wherein both bonding surfaces (1, 3) have a silicon surface, and wherein an additional near-surface first doping layer (5) is produced below at least one of the bonding surfaces (1).

The invention belongs to the technical field of power equipment monitoring, and discloses a quantum sensing and MEMS sensing integrated partial discharge detection device and method. Partial discharge signals are collected through the quantum sensor and the electric field sensor; the data acquisition card transmits data to the microprocessor, the microprocessor judges the discharge type by using a wavelet transform method, extracts characteristic parameters, transmits the data to the computer, analyzes and determines calculation weights of different sensors according to the characteristic parameters to perform data fusion, and calculates and displays the partial discharge electric field intensity. According to the method, data fusion of the quantum sensor and the MEMS sensor is realized, more comprehensive and accurate information is provided, the source and characteristics of partial discharge can be better identified, the diagnosis accuracy and the reliability of a detection system are improved, false alarm and missing alarm are reduced, and reliable data are provided for the operation state, fault diagnosis and maintenance of power equipment.

The invention relates to the technical field of pressure sensors, and discloses a piezoresistive multi-range MEMS pressure sensor and a processing method thereof. The piezoresistive multi-range MEMS pressure sensor comprises: a pressed diaphragm; the mass blocks comprise a central mass block and a fixed mass block; the insulating layer is clamped between the pressed diaphragm and the mass block; the piezoresistor is arranged on one side, deviating from the mass block, of the pressed diaphragm; the at least two supporting frames are located in the pressure groove, each supporting frame surrounds the center mass block and is spaced from the center mass block, the supporting frame adjacent to the center mass block is connected with the center mass block through a first connecting beam, and the supporting frame adjacent to the fixed mass block is connected with the fixed mass block through a second connecting beam; every two adjacent supporting frames are connected through a third connecting beam. The piezoresistive multi-range MEMS pressure sensor disclosed by the invention is simple in structure and easy to process, and not only realizes multi-range acting force detection, but also realizes micro-range high overload measurement.

The invention belongs to the technical field of integrated circuit design, and particularly relates to a flexible thermoelectric flow velocity sensor for surface flow field monitoring, which comprises a flexible substrate, and a central heating circuit and a thermopile arranged on the flexible substrate, wherein the thermopile surrounds the periphery of the heating circuit, and a thermoelectric junction close to the heating circuit and a thermoelectric junction far away from the heating circuit are formed. The structure of the central heating circuit and the surrounding thermopile is adopted, the temperature difference output voltage generated by the heating circuit and the flow field is utilized to measure the flow velocity, and the use scene of the sensor is expanded through the arrangement of the flexible substrate.

The invention relates to an airflow sensor testing structure and a packaging method and packaging structure thereof, each chip unit of an airflow sensor wafer is composed of a substrate (1), a vibrating diaphragm (2) and a back plate which are stacked, the substrate (1) is provided with a back cavity (42) penetrating in the thickness direction of the substrate (1), a slot (10) is formed in the bottom of the substrate (1), and the vibrating diaphragm (2) is arranged in the slot (10). The open groove (10) penetrates through the substrate (1) and the back cavity (42), and the open groove (10) is used for establishing a continuous air flow path in a space outside the back cavity (42) and the air flow sensor. During packaging, the airflow sensor chip is fixed on the packaging substrate through silica gel, a packaging shell is installed outside the airflow sensor chip, the open groove (10) is filled with the silica gel, and blocking and sealing of the open groove (10) are achieved. According to the invention, the requirement of each tube core on the test wafer can be met, the production cost is not increased, and the risk of wafer fragmentation can be effectively avoided.

The invention discloses an outdoor static measurement MEMS sensor sensitivity calibration method, and relates to the technical field of sensor calibration, and the method comprises the specific steps: firstly constructing dual references including a factory reference and a field relation; synchronously collecting multi-source data according to a set period, and preprocessing to obtain an effective sequence; then double check chain fitting key indexes are started in parallel; if a collaborative judgment result is conflicted, high-grade diagnosis is triggered; after diagnosis, the acquisition period of sensitivity drift is prolonged, and parameters are recalculated; and finally, if the conditions are met, solidifying calibration parameters, installing a fault output alarm, and uploading whole-process data records to the cloud. According to the method, the sensitivity calibration of the sensor is guaranteed by constructing double references, multi-source data are synchronously acquired, and the performance is evaluated through double check chains. The efficiency is improved through round-robin scheduling of time slices, effective data are reserved through data preprocessing, differential processing is carried out after fault diagnosis, whole-process data recording and uploading are carried out, calibration parameters are solidified, it is guaranteed that the result is effective, and the application range is widened.

The invention provides a symmetrical clamped micro-beam electric power sensing device based on MEMS resonators, and belongs to the technical field of MEMS sensing. The sensing device comprises a sensing assembly. The sensing assembly comprises a vibration beam, an excitation electrode, a tuning electrode and an auxiliary electrode. The two ends of the vibration beam in the axial direction of the vibration beam are connected with the auxiliary electrodes, and the exciting electrodes and the tuning electrodes are arranged at intervals in the length direction of the vibration beam and arranged on the same side of the vibration beam. Excitation voltage is applied to the excitation electrode so that the excitation electrode can excite the vibration beam to generate resonance. Tuning voltage is applied to the tuning electrode so that the tuning electrode can adjust the rigidity of the vibration beam according to the environment temperature, and the thermal power corresponding to the heat source can be inverted. The two sensing assemblies are arranged in a central symmetry mode, so that interference of electrostatic fields generated by the excitation electrodes and the tuning electrodes corresponding to different vibration beams can be weakened mutually. According to the invention, high-precision power inversion in a wide temperature range can be realized.

The invention provides a resonant pressure sensor with adjustable measuring range and sensitivity, and relates to the technical field of sensors, and the resonant pressure sensor comprises a pressure sensitive film which is used for detecting external pressure; the resonator layer comprises a double-end clamped resonant beam, the double-end clamped resonant beam is arranged above the pressure sensitive film, a movable part of the double-end clamped resonant beam is suspended, one side of the double-end clamped resonant beam is provided with two driving electrodes for applying an alternating current driving signal and a parameter pumping alternating current signal respectively, and the other side of the double-end clamped resonant beam is provided with two detection electrodes; the silicon sealing cover layer is provided with a resonant cavity, and the resonant cavity is located above the pressure sensitive film and the double-end clamped resonant beam and used for providing a deformation space for the pressure sensitive film and providing a vibration space for the double-end clamped resonant beam; in the first working mode, the first-order mode of the resonant beam is split into two amplitude peak values by applying a parameter pumping alternating current signal, and the sensitivity of the output amplitude ratio is adjusted by adjusting the amplitude of the parameter pumping alternating current signal; the measurement range is adjusted by adjusting the frequency of the parameter pumping alternating current signal.

The invention belongs to the field of hydrogen sensors, and particularly relates to an MEMS hydrogen sensor based on a high-entropy alloy and a preparation method of the MEMS hydrogen sensor. The hydrogen sensor comprises an insulating substrate, an interdigital electrode and a hydrogen sensitive layer, the hydrogen sensitive layer is formed by compounding high-entropy alloy nanoparticles composed of at least five transition metal elements and a semiconductor metal oxide substrate, and the high-entropy alloy nanoparticles are uniformly dispersed on the surface of the semiconductor metal oxide substrate to form a heterojunction; the atomic percent of each transition metal element in the high-entropy alloy nanoparticles is 5%-35%; the semiconductor metal oxide substrate is of a SnO2 or ZnO nano structure, and the specific surface area is larger than or equal to 50 m < 2 > / g. The preparation method is the preparation method of the hydrogen sensor. The hydrogen sensor provided by the invention has an ultralow hydrogen detection limit, the response speed is within a second level, the consumption of noble metal is greatly reduced, and the activity attenuation in a high-temperature environment is small.

The invention discloses a tunable MEMS (Micro Electro Mechanical System) structure based on a piezoelectric laminated structure, which comprises a substrate, the substrate is provided with a front surface and a back surface, the back surface of the substrate is provided with a back cavity, the back cavity provides a vibration space for a vibrating diaphragm, and a piezoelectric layer grows on the front surface of the substrate. A height plate is arranged on the front side of the substrate in a sealed mode, a dielectric cavity is formed by the internal space of the height plate and the substrate, the piezoelectric layer is located in the dielectric cavity, a through hole communicated with the dielectric cavity is formed in the side wall of the height plate, and a Helmholtz resonant cavity of the vibrating diaphragm is constructed by the dielectric cavity. According to the tunable MEMS structure based on the piezoelectric laminated structure, the height plate can form a Helmholtz resonant cavity of the vibrating diaphragm, the resonant frequency of the vibrating diaphragm is adjusted, and energy is efficiently coupled.

The invention relates to the technical field of piezoelectric micropumps, in particular to an ultrasonic traveling wave piezoelectric micropump which comprises a semiconductor substrate and further comprises a piezoelectric film arranged on the semiconductor substrate. The plurality of driving electrodes are arranged on the piezoelectric film; the micro-channel cavity is bonded with the piezoelectric film to form a sealed channel for liquid flowing, and the micro-channel cavity is provided with a liquid inlet / outlet; wherein the plurality of driving electrodes are configured to input alternating current electric signals with fixed phase difference, so as to excite ultrasonic traveling waves used for driving liquid in the sealed flow channel to directionally flow in the piezoelectric film. The invention aims to solve the technical problems that the piezoelectric micropump is low in directional driving efficiency and difficult to adapt to complex working conditions.

The invention provides a three-wafer bonding MEMS device and a preparation method thereof, the three-wafer bonding MEMS device comprises a first wafer, a second wafer, a third wafer, an insulating layer and a metal electrode, the first wafer comprises a plurality of first grooves, the bottom of each first groove is communicated with at least one silicon groove, and each silicon groove is filled with an insulating material; protruding silicon-silicon bonding platforms are arranged between the first grooves and inside the first grooves. The second wafer is connected with the first wafer through a silicon-silicon bonding platform, and a plurality of strip holes are formed in the second wafer; the third wafer comprises a plurality of second grooves; a limiting bulge can be arranged in the second groove; a raised eutectic bonding platform is arranged between the interior of the second groove and the second groove, and the third wafer is bonded with the second wafer; the insulating layer covers the first wafer; the plurality of metal electrodes are disposed on the insulating layer. According to the invention, the problem that the electrical parameters of the silicon-silicon bonding process cannot be tested and represented in the production and manufacturing of the MEMS device is solved.

The invention provides a semiconductor device and a manufacturing method thereof, and the method comprises the steps: providing a substrate, forming a plurality of MEMS standard devices and at least one MEMS test device on the front surface of the substrate, enabling a vibrating diaphragm of the MEMS test device to be provided with an opening, and enabling vibrating diaphragms of the MEMS standard devices not to be provided with an opening; the back surface of the substrate is provided with a back cavity forming area corresponding to each device; forming a gas guide groove in the back surface of the substrate, wherein the gas guide groove is connected with the MEMS standard device and the back cavity forming area of the MEMS test device; a back cavity is formed in a back cavity forming area on the back face of the substrate, and the back cavities of the MEMS standard device and the MEMS test device are communicated through a gas guide groove. According to the invention, through the arrangement of the air guide groove, the diaphragm in the MEMS standard device can be prevented from being absorbed or even broken, so that the CP test can be carried out on the MEMS standard device at the delivery end, and the reliability of the product is improved.

The invention provides a capacitive MEMS device and a manufacturing method thereof. The capacitive MEMS device comprises at least one MEMS chip, each MEMS chip comprises a wafer substrate and a structural layer arranged on the top surface of the wafer substrate, and a first cavity structure is formed in the wafer substrate. The structural layer covers the first cavity structure and comprises a vibrating diaphragm fixed on the top surface of the wafer substrate and a back polar plate which is fixed on the wafer substrate and is spaced from the vibrating diaphragm to form a capacitor, the bottom surface of the wafer substrate is provided with a groove structure which is sunken towards the direction of the structural layer, and the groove structure partially penetrates through the wafer substrate; the first cavity structure penetrates through the groove bottom of the groove structure and the top surface of the wafer substrate along a first direction; the groove structure and the first cavity structure jointly form an air flowing channel, and the groove structure is communicated with the first cavity structure and the outside of the MEMS chip. According to the capacitive MEMS device, balance control over the air pressure in the device is achieved, and the influence of the air pressure on the capacitive MEMS device is avoided.

The invention provides a silicon-based free space type optical MEMS accelerometer and a manufacturing method, the upper layer of the accelerometer is a glass substrate free space optical sensitive structure, the lower layer of the accelerometer is a silicon-based horizontal axis MEMS sensitive structure, and the upper layer structure is fixed on the lower layer structure through a bonding process. Wherein the upper-layer optical sensitive structure consists of a pair of Michelson interferometers, a glass anchor point and a glass mass block; and the lower-layer MEMS sensitive structure consists of four groups of cantilever beams, a silicon anchor point and a silicon mass block. The lower layer MEMS sensitive structure converts the horizontal shaft input acceleration into the displacement of the silicon mass block, the displacement is synchronously transmitted to the glass mass block, and the pair of oppositely arranged Michelson interferometers converts the displacement into the reverse transformation of an interference light phase, so that the high-precision differential detection of the acceleration is realized. The micro-optical accelerometer scheme provided by the invention has the outstanding advantages of high detection sensitivity, strong common-mode error resistance and high integration level.

The invention discloses an MEMS device and a preparation method thereof, and relates to the technical field of semiconductor devices. The MEMS device comprises a substrate layer, a stress matching layer and a doped polycrystalline silicon structure layer which are sequentially stacked from bottom to top, and the preparation method comprises the following steps: forming a sacrificial layer on the substrate layer, patterning the sacrificial layer, and defining anchor regions of the stress matching layer and the doped polycrystalline silicon structure layer; depositing a stress matching layer on the patterned sacrificial layer, wherein the stress matching layer is a silicon nitride-based composite film with stress increased from bottom to top in a gradient manner; depositing a doped polycrystalline silicon structure layer on the stress matching layer; and sequentially carrying out patterning treatment and anchor region annealing treatment on the doped polycrystalline silicon structure layer, and carrying out removal treatment and drying treatment on the sacrificial layer to prepare the MEMS device. The MEMS device prepared by the invention has the characteristics of high stress matching, uniform doping concentration and relatively good process compatibility.

The invention relates to a MEMS mirror array module (100) for use in semiconductor technology equipment. The MEMS mirror array module (100) comprises at least one MEMS micromirror unit (200) with a MEMS mirror array structure (210) and an elongated interface element (250) over which the MEMS mirror array structure (210) projects laterally, and a higher-level assembly (300) with at least one receptacle (350) for the interface element (250) of the MEMS micromirror unit (200), wherein the MEMS micromirror unit (200) is mounted in a receptacle (350) of the higher-level assembly (300) such that the MEMS mirror array structure (210) of the MEMS micromirror unit (200) abuts the higher-level assembly (300). A gas atmosphere with a thermal conductivity of more than 0.05 W / (m·K) is introduced into a gap (400) between the interface element (250) and the receptacle (350).

The invention relates to an MEMS-CMOS device vertical interconnection integrated packaging preparation method, which comprises the following steps of: processing a TSV (Through Silicon Via) on a first silicon wafer (3), and filling crystalline silicon (2a); respectively processing a CMOS circuit layer and an RDL layer on the first silicon wafer, and processing a germanium bonding point (8) on the other surface of the first silicon wafer; a second SOI silicon wafer (10) and a third SOI silicon wafer (11) are fused and bonded to form a cavity (9), an aluminum / titanium / aluminum bonding point (12) is prepared on the third silicon wafer, an MEMS movable microstructure (13) is prepared on the third silicon wafer, the metal aluminum / titanium / aluminum bonding point and the MEMS movable microstructure are electrically connected, and the aluminum-germanium bonding point of the first silicon wafer and the aluminum-germanium bonding point of the third silicon wafer are subjected to eutectic bonding. According to the invention, the size of an integrated packaging chip of the MEMS device and the CMOS processing circuit is greatly reduced, and meanwhile, the RDL structure can realize wafer-level bonding packaging without considering the types, layout and size of the MEMS device and the CMOS circuit.