4850 results about "Low stress" patented technology

Prior electrochromic devices frequently suffer from high levels of defectivity. The defects may be manifest as pin holes or spots where the electrochromic transition is impaired. This is unacceptable for many applications such as electrochromic architectural glass. Improved electrochromic devices with low defectivity can be fabricated by depositing certain layered components of the electrochromic device in a single integrated deposition system. While these layers are being deposited and/or treated on a substrate, for example a glass window, the substrate never leaves a controlled ambient environment, for example a low pressure controlled atmosphere having very low levels of particles. These layers may be deposited using physical vapor deposition.

Reactive halogen-ion plasmas, having for example, generating chloride ions, generated from low-pressure halogen gases using a radio-frequency plasma are employed for producing low-friction carbon coatings, such as a pure carbon film, at or near room temperature on a bulk or thin film of a compound, such as titanium carbide.

A device having thin-film transistor (TFT) floating gate memory cell structures is provided. The device includes a substrate, a dielectric layer on the substrate, and one or more source or drain regions being embedded in the dielectric layer. the dielectric layer being associated with a first surface. Each of the one or more source or drain regions includes an N⁺ polysilicon layer on a diffusion barrier layer which is on a first conductive layer. The N⁺ polysilicon layer has a second surface substantially co-planar with the first surface. Additionally, the device includes a P⁻ polysilicon layer overlying the co-planar surface and a floating gate on the P⁻ polysilicon layer. The floating gate is a low-pressure CVD-deposited silicon layer sandwiched by a bottom oxide tunnel layer and an upper oxide block layer. Moreover, the device includes at least one control gate made of a P⁺ polysilicon layer overlying the upper oxide block layer. A method of making the same memory cell structure is provided and can be repeated to integrate the structure three-dimensionally.

A high strength fastener for bone fractures. This fastener consists of two members, a male and female. The male member has external machine screw threads that screw into matching internal threads in the female member at a predictable torque so that the force of fixation exerted upon the bone can be approximated by the installer. Because of the effective length of the threads, this fastener is easily adjusted to the proper length without cutting. Both members have a smooth shoulder region proximal to the heads and this shoulder region presents a low-stress bearing surface to each cortical wall. Each member has a head that fits rigidly into an installation tool providing for ease of insertion and fastening in the patient with minimal invasion and little periosteal stripping. Each head has a semi-spherical face that articulates with matching washers and plates, thus allowing the washer to assume the plane of the surrounding bone therefore distributing the load over a greater area.

A device is provided, in direct skin contact, surrounding an injured area for the treatment, reduction of joint inflammation, edema and excitation of neural and muscular stimulation associated with human and mammal tissues. This therapeutic light source includes a multiplicity of light emitting diodes (LED's) found in the ranges of 350 nm to 1000+ nm and fiber optic connections. A neoprene type material or other non-allergenic material is used to set the LED's and fiber optics in layers consisting of contact with the skin to few centimeters from the skin tissue. Distance will vary from contact or near contact with devices to several millimeters of separation. Each LED array is independently controlled allowing for optimal modulation of light frequencies and wavelengths. Technology is integrated allowing for biomedical feedback of tissue temperature and other statistical information. A low voltage, portable power supply, is integrated into the device as well as an analog/digital, input/output connection device. The design will be created for continuous wear, flexibility and comfort.

Silicon oxide layer is deposited on a semiconductor substrate by PECVD at a temperature of less than about 200° C. and is treated with helium plasma to reduce stress of the deposited layer to an absolute value of less than about 80 MPa. Plasma treatment reduces hydrogen content in the silicon oxide layer, and leads to low stress films that can also have high density and low roughness. In some embodiments, the film is deposited on a semiconductor substrate that contains one or more temperature-sensitive layers, such as layers of organic material or spin-on dielectric that cannot withstand temperatures of greater than 250° C. In some embodiments the silicon oxide film is deposited to a thickness of between about 100-200 Å, and is used as a hardmask layer during etching of other layers on a semiconductor substrate.

Large gas turbine blades made from separate cast segments of superalloys are disclosed. The turbine blade is designed such that bond lines between adjacent segments are placed in low stress regions of the blade. The cast superalloy segments of the blades are aligned and fitted together with specified tolerances. The turbine blade segments are then joined by transient liquid phase bonding, followed by a controlled heat treatment which produces the desired microstructure in the bond region. The method allows for the production of large, high quality turbine blades by joining small, high quality cast superalloy sections, in comparison with prior attempts to cast large turbine blades as single pieces which have produced very low yields and high individual component costs.

A low-power, area and pin efficient signaling alternative to serial differential links used for chip-to-chip, backplane, optical and other signaling applications. The multi-bit differential signaling (MBDS) generally comprises a driver and link termination network design coupled with a coding system based on n choose M (nCm) coding. MBDS has comparable electrical characteristics to conventional low-voltage differential signaling (LVDS) and is fully compatible with existing LVDS receivers in point-to-point and multi-point bus topologies. However, MBDS uses up to 40% less power, with up to 33% fewer I/O pads than equivalent LVDS links.

A method is provided for the fabrication of fuses within a semiconductor IC structure, which fuses are delectable by a laser pulse or a low voltage electrical pulse typically below 3.5 V to reroute the electrical circuitry of the structure to remove a faulty element. The fuses are formed on the surface of circuitry which is coplanar with a surrounding dielectric such as the circuitry formed by a Damascene method. A preferred fuse material is silicon-chrome-oxygen and the preferred circuitry is copper.

Methods are provided for fabricating silicon carriers with conductive through-vias that allow high-yield manufacture of silicon carrier with, low defect density. In particular, methods are provided which enable fabrication of silicon, carries with via diameters such as 1 to 10 microns in diameter for a vertical thickness of less than 10 micrometers to greater than 300 micrometers, which are capable robust to thermal-mechanical stresses during production to significantly minimize the thermal mechanical movement at the via sidewall interface between the silicon, insulator, liner and conductor materials.

Scalable silicon (Si) interposer configurations that support low voltage, low power operations are provided. In one aspect, a Si interposer is provided which includes a plurality of through-silicon vias (TSVs) within a first plane thereof adapted to serve as power, ground and signal interconnections throughout the first plane such that the TSVs that serve as the power and ground interconnections are greater in number and/or size than the TSVs that serve as the signal interconnections; and a plurality of lines within a second plane of the interposer in contact with one or more of the TSVs in the first plane, the second plane being adjacent to the first plane, adapted to serve as power, ground and signal interconnections throughout the second plane such that the lines that serve as the power and the ground interconnections are greater in number and/or size than the lines that serve as the signal interconnections.

A complementary SCR-based structure enables a tunable holding voltage for robust and versatile ESD protection. The structure are n-channel high-holding-voltage low-voltage-trigger silicon controller rectifier (N-HHLVTSCR) device and p-channel high-holding-voltage low-voltage-trigger silicon controller rectifier (P-HHLVTSCR) device. The regions of the N-HHLVTSCR and P-HHLVTSCR devices are formed during normal processing steps in a CMOS or BICMOS process. The spacing and dimensions of the doped regions of N-HHLVTSCR and P-HHLVTSCR devices are used to produce the desired characteristics. The tunable HHLVTSCRs makes possible the use of this protection circuit in a broad range of ESD applications including protecting integrated circuits where the I/O signal swing can be either within the range of the bias of the internal circuit or below/above the range of the bias of the internal circuit.

A low voltage/power ratio photovoltaic power generation panel includes a plurality of photovoltaic cells, wherein at least a subset of the cells are arranged in an array of “x” columns and “y” rows of cells connected in a two dimensional matrix configuration, wherein the cells in each row are connected in parallel and the cells in each column are connected in series. The cells in the panel are connected by arranging the plurality of cells in a plurality of columns, each column having a number of cells; arranging the plurality of columns in the number of rows; and connecting the plurality of cells together in a two dimensional matrix configuration by connecting the cells in each row together in parallel and the cells in each column in series.

The present invention generally relates to low compressive stress doped silicate glass films for STI applications. By way of non-limited example, the stress-lowering dopant may be a fluorine dopant, a germanium dopant, or a phosphorous dopant. The low compressive stress STI films will generally exhibit a compressive stress of less than 180 MPa, and preferably less than about 170 MPa. In certain embodiment, the STI films of the invention will exhibit a compressive stress less than about 100 MPa. Further, in certain embodiments, the low compressive stress STI films of the invention will comprise between about 0.1 and 25 atomic % of the stress-lowering dopant.

The static mixer comprising mixing elements for separating the material to be mixed into a plurality of streams and a mechanism for the layered junction of the same, a transversal edge and guide walls that extend at an angle to said transversal edge, as well as deflecting elements arranged at an angle to the longitudinal axis and provided with openings, includes mixing elements comprising a transversal edge and a following transversal guide wall and at least two guide walls with lateral end sections and at least one bottom section disposed between said guide walls, thereby defining at least one opening on one side of said transversal edge and at least two openings on the other side of said transversal edge. In addition to a high mixing efficiency and a low pressure drop, a mixer of this kind provides reduced dead volumes and is thus more effective than mixers of the prior art.

The end of the elongated tubular element of the appliance that is designed to be inserted into a body cavity or vessel is formed entirely of soft, compliant material. That end carries an inflatable balloon formed in its fully inflated shape. The balloon is inflated to a predetermined low pressure level to prevent pressure necrosis in the adjacent tissue. A method and apparatus for introducing the soft end of the appliance into the body cavity are also provided. The introducer apparatus includes rigid core surrounded by a soft, compliant sleeve. The sleeve extends beyond the rigid core to form an invertable section. The soft end of the appliance is situated adjacent the apparatus, the balloon is wrapped around the apparatus, and the sleeve section is inverted over the appliance, compressing the balloon and forming a soft, rounded insertion tip. The unit is then introduced into the body cavity. After the appliance is separated from the apparatus, the apparatus is withdrawn.