322 results about "Block layer" patented technology

Embodiments of the present application relate to the technical field of display, and provide a display panel and a display device, for use in improving the wide-angle anti-peeping effect of the display panel. The display panel comprises: a substrate; a plurality of light-emitting elements located on one side of the substrate, wherein each of the light-emitting elements comprises a first light-emitting unit and a second light-emitting unit; a first light blocking layer located on the side of the first light-emitting unit distant from the substrate, wherein the first light blocking layer comprises a first opening; and a second light blocking layer located on the side of the first light blocking layer distant from the substrate, wherein the second light blocking layer comprises a second opening. In a direction perpendicular to the plane where the substrate is located, both the first opening and the second opening at least partially overlap the first light-emitting unit; and the area of the first opening is greater than that of the second opening, and the orthographic projection of the second light blocking layer on the plane where the substrate is located at least partially covers the edge of the first opening.

Semiconductor devices including one or more hydrogen-blocking layers are described. In one example, a semiconductor device comprises a semiconductor substrate including a source region, a gate region, a drain region, and a drain access region, where a heterojunction structure is disposed over the semiconductor substrate. The heterojunction structure includes a buffer layer over the semiconductor substrate and a barrier layer over the buffer layer. A p-doped III-N layer is disposed over the barrier layer in the gate region and a gate electrode is formed over the p-doped III-N layer. A first hydrogen-blocking layer is disposed over the gate electrode where the first hydrogen-blocking layer is configured to arrest diffusion of hydrogen into the p-doped III-N layer from a dielectric layer formed after forming the gate electrode.

This invention relates to an aromatic amine organic compound and an organic electroluminescent device containing the same, belonging to the field of semiconductor materials technology. The structure of the compound provided by this invention is shown in general formula (1): When the hole transport material or electron blocking layer material of the organic electroluminescent device is prepared by using the aromatic amine compound of this invention, the device voltage can be reduced and the device life can be extended at the same time, especially the device high temperature life is significantly improved.

A method for manufacturing a semiconductor device includes: forming a first conductive interconnect which penetrates a dielectric layer disposed over a substrate; forming a patterned dielectric layer on the dielectric layer, the patterned dielectric layer being formed with a trench and the first conductive interconnect being exposed from the trench; selectively forming a blocking layer to cover the first conductive interconnect, the blocking layer being formed using an acidic solution including a blocking material; selectively forming a barrier material layer on the dielectric layer and the patterned dielectric layer; removing the blocking layer; forming a conductive material layer on the barrier material layer; and removing a portion of the conductive material layer and a portion of the barrier material layer to form a second conductive connected to the first conductive interconnect.

The invention relates to a blue-green dual-band light-emitting diode epitaxial wafer which comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type semiconductor layer which are sequentially stacked in the epitaxial direction. The multi-quantum light-emitting layer comprises a first blue light InGaN layer, a first blue light barrier layer, a first green light barrier layer, a first green light InGaN layer, a second green light barrier layer, a second blue light InGaN layer and a second blue light barrier layer which are sequentially, periodically and alternately grown in the epitaxial direction. The first green light barrier layer comprises a pre-well low-energy-level barrier layer, a pre-well high-energy-level barrier layer and a pre-well polarization compensation barrier layer which are sequentially grown along the epitaxial direction; the second green light barrier layer comprises a post-well polarization compensation barrier layer, a post-well high-energy-level barrier layer and a post-well low-energy-level barrier layer which are sequentially grown along the epitaxial direction; the preparation cost of the backlight source can be effectively reduced, the use of fluorescent powder is reduced, the luminous efficiency is high, and the color rendering performance is good.

The invention relates to the technical field of semiconductor devices, in particular to a blue-green dual-waveband LED epitaxial wafer which comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type semiconductor layer which are sequentially arranged in the epitaxial direction. The multi-quantum well light-emitting layer comprises a non-light-emitting region superlattice layer, a non-light-emitting region quantum well layer, a green light quantum well layer and a blue light quantum well layer which are sequentially, periodically and alternately grown in the epitaxial direction. The backlight source is low in cost, the use of fluorescent powder can be reduced, and the display effect is good.

Embodiments of the present application provide a semiconductor structure manufacturing method and a semiconductor structure. The manufacturing method comprises: providing a substrate; the substrate comprises a substrate, a dielectric structure on the substrate, and a blocking material layer on the dielectric structure; the dielectric structure comprises at least one dielectric layer; forming a first mask layer on the blocking material layer; the first mask layer comprises a first opening exposing a top surface of the blocking material layer; forming a second mask layer in the first opening, and removing the first mask layer; the second mask layer comprises a second opening exposing a top surface of the blocking material layer; using the second mask layer as a mask to pattern the blocking material layer, to form a blocking layer for patterning the dielectric structure; the blocking layer comprises a third opening exposing a top surface of the dielectric structure; the third opening has a size greater than that of the second opening.

A display device includes a plurality of pixels disposed in a display area, each of the pixels including a plurality of pixel electrodes spaced apart from each other, a first light blocking layer disposed in the display area and including a plurality of holes overlapping the plurality of pixel electrodes, a plurality of color filters disposed on the first light blocking layer and respectively corresponding to the plurality of holes, and a second light blocking layer disposed on the color filters and corresponding to the pixel electrodes of some of the plurality of pixels. The second light blocking layer surrounds the corresponding pixel electrodes of the some of the plurality of pixels in a plan view and includes a plurality of light blocking patterns having a constant width.

The invention provides a light emitting diode capable of reducing dislocation density and a preparation method thereof, and belongs to the technical field of photoelectron manufacturing. The light-emitting diode comprises a buffer layer, a dislocation barrier layer and an epitaxial layer which are stacked in sequence, the dislocation barrier layer comprises a first sub-layer, a second sub-layer and a third sub-layer which are stacked in sequence, the first sub-layer comprises a GaN layer, the second sub-layer comprises a carbon-doped GaN layer, and the third sub-layer comprises an AlGaN layer. According to the embodiment of the invention, the dislocation density of the epitaxial layer can be reduced, and the light-emitting effect of the light-emitting diode is improved.

A quantum dot light emitting structure and a method for manufacturing the quantum dot light emitting structure, and an array substrate are disclosed. The quantum dot light emitting structure includes: a quantum dot light emitting layer; an electrode; and an electron transport layer located between the quantum dot light emitting layer and the electrode, the quantum dot light emitting structure further comprises an electron blocking layer located in the electron transport layer, a root-mean-square (RMS) roughness of a surface, close to the quantum dot light emitting layer, of the electron transport layer is different from a root-mean-square (RMS) roughness of a surface, away from the quantum dot light emitting layer, of the electron transport layer.

The embodiment of the invention provides an array substrate, a preparation method of the array substrate and a display panel, and relates to the technical field of display, the array substrate comprises a substrate and a driving wiring layer, the driving wiring layer is located on one side of the substrate, and the driving wiring layer comprises a transistor; the driving wiring layer comprises a first active layer located on one side of the substrate, a first conductive layer located on the side, away from the substrate, of the first active layer and a first barrier layer located on the side, away from the substrate, of the first conductive layer, the first barrier layer comprises a first barrier part, the transistor comprises a first grid electrode and a first active part, and the first grid electrode is located on the first conductive layer; the first active part is located on the first active layer, and the orthographic projection of the first blocking part on the substrate is at least partially overlapped with the orthographic projection of the first active part on the substrate. The risk that the transistor generates channel negative bias can be reduced, so that the convergence of the transistor can be improved.

This invention provides a GaN-based light-emitting diode epitaxial structure and its fabrication method. By introducing a Zn source as a surface activator throughout the growth process of the P-type AlGaN electron blocking layer, a P-type AlGaN electron blocking layer structure with a gradient distribution of Zn concentration along the direction of the P-type AlGaN electron blocking layer is constructed. Specifically, through the core role of the Zn surface activator and the innovative design of the Zn concentration gradient distribution, a smooth rise in the conduction band Ec and no loss of strong electron blocking capability are achieved, while ensuring that the valence band Ev is smooth and without spikes throughout and that hole injection is unimpeded throughout.

The present disclosure provides a light-emitting device and a display device, the light-emitting device comprising a plurality of functional layers stacked in sequence, the plurality of functional layers comprising an anode, a hole transport layer, an electron blocking layer, a light-emitting layer, a hole blocking layer, an electron transport layer and a cathode, the light-emitting layer comprising at least two light-emitting bodies, different light-emitting bodies corresponding to different color sub-pixels; the light-emitting device further comprising at least one energy level transition film layer, the energy level transition film layer being arranged between at least one light-emitting body and the hole transport layer and / or the hole blocking layer, wherein the energy band gap difference between two functional film layers adjacent to the energy level transition film layer is greater than a predetermined value, and the energy level of the energy level transition film layer is between the two functional film layers adjacent thereto. The light-emitting device and the display device provided by the embodiments of the present disclosure can improve the light-emitting efficiency of the light-emitting body, so as to improve the problems such as poor display caused by the difference in light-emitting characteristics of RGB three sub-pixels.

A photomask, a method of forming a pattern, a method of manufacturing a display device, and an electronic device are provided. The photomask includes a transparent substrate having a first surface and a second surface opposite each other, a first semi-transparent layer disposed on the first surface of the transparent substrate, a light-blocking layer disposed on the second surface of the transparent substrate, and a second semi-transparent layer disposed between the second surface of the transparent substrate and the light-blocking layer. The second semi-transparent layer has a transmittance higher than that of the first semi-transparent layer.

Methods and apparatus for substrate processing include: depositing a bulk layer of a dielectric material comprising a metal onto a device attached to a device substrate; depositing a graded layer of the dielectric material with a compositional gradient, onto the bulk layer; and depositing a bonding cap layer of the metal, having a purity of at least 99% by weight, onto the graded layer, wherein the graded layer has a dielectric gradient from substantially dielectric adjacent to the bulk layer to substantially conductive adjacent the bonding cap layer.

The embodiment of the utility model provides a color film substrate, a display panel and a display device. The color film substrate comprises a substrate; the light shielding layer is located on one side of the substrate, the light shielding layer comprises a first light shielding part located in the display area and a second light shielding part located in the first sub-frame area, the second light shielding part comprises a plurality of sub-light shielding blocks arranged in the first direction, and a first gap is formed between every two adjacent sub-light shielding blocks; the first direction is a direction from the display area to the first sub-frame area; the color film layer is located in the display area and located on one side of the substrate and comprises a first color film, a second color film and a third color film; the barrier layer is located on one side of the substrate, the barrier layer comprises a first barrier part located in the first sub-frame area, and the orthographic projection of the first gap on the substrate is located in the orthographic projection of the first barrier part on the substrate. According to the invention, the gap light leakage phenomenon of the product is improved.

IC die package routing structures including a bulk layer of a first metal composition on an underlying layer of a second metal composition. The lower layer may be sputter deposited to a thickness sufficient to support plating of the bulk layer upon a first portion of the lower layer. Following the plating process, a second portion of the lower layer may be removed selectively to the bulk layer. Multiple IC die may be attached to the package with the package routing structures responsible for the transmission of high-speed data signals between the multiple IC die. The package may be further assembled to a host component that conveys power to the IC die package.

An organic compound and a use thereof. The organic compound, by means of the design of the molecular structure thereof, has excellent optoelectronic properties and suitable HOMO and LUMO energy levels, with high hole mobility and good stability, and is capable of exhibiting excellent electron-blocking performance and hole-transport performance. The organic compound is applied in an organic electroluminescent device and is suitable for use as a hole transport layer material and / or an electron blocking layer material, and can effectively improve the luminous efficiency and stability of the device, extend the device lifetime, and reduce voltage and energy consumption.

A display device includes a window, and a display module including a base layer including first and second areas, a first group of light-emitting elements the first area to be deactivated during a first operation mode, and activated during a second operation mode, a second group of light-emitting elements in the second area to be activated during the first and second operation modes, a first light-sensing element between the first and second groups, a first light-blocking layer defining a first opening corresponding to the first group, a second opening corresponding to the second group, and a third opening corresponding to the first light-sensing element, and a second light-blocking layer above the first light-blocking layer, apart from the first area in plan view, overlapping the second area, and defining a fourth opening corresponding to the second opening.

A semiconductor device and a manufacturing method thereof, the method comprising: providing a semiconductor substrate, the semiconductor substrate comprising an active region, a gate structure formed on the active region, and a gate sidewall formed on a sidewall of the gate structure; forming a metal silicide blocking layer; performing a first etching on the metal silicide blocking layer to form a field plate dielectric layer and a sidewall covering layer, the sidewall covering layer covering the gate sidewall; forming a metal silicide layer on a surface of the semiconductor substrate and the gate structure exposed by the metal silicide blocking layer remaining after the first etching; forming an interlayer dielectric layer; and performing a second etching to synchronously form a field plate contact hole and a shared contact hole, the field plate contact hole exposing part of the field plate dielectric layer, and the shared contact hole exposing part of the sidewall covering layer, the metal silicide layer on a top surface of the gate structure, and the metal silicide layer on a top surface of the active region. The application can increase the process window when multiple contact holes are etched together.

The invention provides a display device, an electronic device and a method of driving the display device. The display device includes: a first pixel and a second pixel disposed in a first unit area of a display area including a unit area, each of the first pixel and the second pixel including a first sub-pixel and a second sub-pixel, and the first pixel and the second pixel sharing a third sub-pixel; a first light blocking layer disposed on a light emitting element layer including a light emitting element of a sub-pixel disposed in each of the unit regions, and surrounding an emission region in which the light emitting element is disposed; and a second light blocking layer disposed on the first light blocking layer and surrounding emission regions of the first and second sub-pixels of the second pixel in the first unit region, in which the first pixel and the second pixel are driven in different periods.

A display device according to an exemplary embodiment of the present disclosure includes a substrate in which an emission area and a non-emission area are divided and a plurality of sub-pixels are defined, a first electrode disposed in each of the plurality of sub-pixels, a bank disposed on an insulating layer above the substrate and exposing the first electrode through an opening, a trench formed by removing a partial area of the bank between the plurality of sub-pixels to expose the insulating layer, an organic layer disposed above the substrate on which the bank is provided, a charge blocking layer interposed in the organic layer in the trench, and a second electrode disposed on the organic layer.

A light receiving device includes a substrate including first and second areas, an element layer on the substrate and including a pixel defining film including first and second openings in the first and second areas, respectively, first and second light receiving areas respectively defined by the first and second openings, and an optical layer on the element layer and including a first light blocking layer and a light guide layer on the first light blocking layer. The first light blocking layer includes first light blocking patterns respectively including first transmission holes, the light guide layer includes first and second light guide patterns respectively including first and second light guide holes corresponding to the first and second openings, respectively. The first light guide hole overlaps the first opening in a plan view, and the second light guide hole is shifted with respect to the second opening in the plan view.

The present invention relates to an electronic device comprising at least at least two subpixels, where the subpixels comprise a common hole-transport layer c-HTL and different electron-blocking layers EBL1 and EBL2, where the interface charge density ICD at the interface of c-HTL / EBL1 and c-HTL / EBL2, fulfils specific criteria.

The present application relates to a kind of perovskite solar cells and its passivation method, the electron blocking layer is made of acyl chloride group derivative, on the one hand, the carbonyl group in acyl chloride group can be coordinated with the Pb 2+ Ion forms Lewis acid-base pair, thereby significantly reduce the defect state density of perovskite surface.Let go of group Cl ‑ Ion can increase the grain size of perovskite, improve the crystalline quality of perovskite layer.In addition, acyl chloride group and perovskite component reaction generates electron blocking layer cesium acetate, reduces the charge recombination at interface, while it can promote energy level gradient arrangement, effectively improve the separation and extraction capacity of carrier, successfully improve the photoelectric conversion efficiency and stability of carbon-based hole-free all-inorganic perovskite solar cell, and significantly reduce the hysteresis effect.The present application process is simple and has universality, is conducive to promoting the commercialization of perovskite, has wide market demand and application prospect.

The application discloses a light emitting diode epitaxial wafer and a preparation method thereof and a light emitting diode, and relates to the field of semiconductor photoelectric devices. The light emitting diode epitaxial wafer comprises a substrate and a buffer layer, a non-doped GaN layer, an N-type GaN layer, a multi-quantum well layer, an intercalation layer, an electron blocking layer and a P-type GaN layer arranged on the substrate in sequence; the intercalation layer comprises an AlN layer and a superlattice layer; the superlattice layer comprises P-AlN layers, P-InN layers and P-GaN layers which are stacked in sequence, and the number of periods is greater than or equal to 2. By implementing the application, the light emitting efficiency of the light emitting diode can be improved.

The application discloses a kind of copolymer organic semiconductor devices based on isolation and interconnection and preparation method, including substrate, photoetching blocking layer, insulating isolation layer, N organic field effect transistor and N-1 interconnection line;Photoetching blocking layer includes isolation layer and inorganic dielectric layer;Isolation layer is opened with N longitudinal through isolation groove along length direction;Inorganic dielectric layer includes lower dielectric layer and upper dielectric layer;Lower dielectric layer is located in N isolation, and upper dielectric layer is laid on the top of isolation layer and lower dielectric layer;Each organic field effect transistor includes semiconductor layer, source, drain and gate;Semiconductor layer is laid in the isolation groove at the bottom of corresponding lower dielectric layer section, and its material is organic copolymer.The application effectively utilizes isolation groove and photoetching blocking layer, and the semiconductor layer of different semiconductor materials is wrapped and isolated, so as to realize the integration of different organic field effect transistors on the same substrate, and the organic field effect transistor can realize effective interconnection.

A structure of a semiconductor device is provided, including a circuit substrate. A first metal bulk layer is disposed on the circuit substrate. A buffer layer is disposed on the first metal bulk layer. An absorbing layer is disposed on the buffer layer. A first electrode layer is disposed on the absorbing layer. A plurality of piezoelectric material units are disposed on the first electrode layer. A protection layer is conformally disposed on the piezoelectric material units. A second metal bulk layer is disposed over the piezoelectric material units, and including a first part and a second part. The first part penetrating through the protection layer is disposed on the piezoelectric material units, serving as a second electrode layer. The second part is at a same level of the first part, and at least electrically connecting to the first electrode layer.

The application relates to a preparation method of an epitaxial structure, the epitaxial structure and application thereof. The preparation method of the epitaxial structure comprises the following steps: providing a substrate; introducing a nitrogen source and a group III source, and epitaxially growing at least one dislocation blocking layer on the substrate by adopting a molecular beam epitaxy process; the dislocation blocking layer comprises a first growth layer and a second growth layer which are stacked in sequence, the first growth layer has a three-dimensional island-shaped morphology, the bottom surface of the second growth layer is in contact with the surface of the first growth layer which is away from the substrate, and the surface of the second growth layer which is away from the substrate has a planar structure; during the growth of the first growth layer, the stoichiometric ratio of the flow rates of the nitrogen source and the group III source is greater than 1, and during the growth of the second growth layer, the stoichiometric ratio of the flow rates of the nitrogen source and the group III source is less than 1; and a group III nitride material layer is epitaxially grown on the dislocation blocking layer by adopting the molecular beam epitaxy process. In this way, part of the dislocations can be terminated in the dislocation blocking layer, so that the dislocation density in the epitaxial structure is reduced.

A display apparatus includes a substrate including a display area and a non-display area; a gate line and a data line disposed on the substrate, wherein the gate line and the data line intersect each other; a plurality of light-emitting elements disposed on the gate line and the data line, wherein each of the plurality of light-emitting elements includes a first electrode, a light-emissive layer, and a second electrode; a first thin-film transistor and a second thin-film transistor disposed under each of the plurality of light-emitting elements; and a light-blocking layer disposed on the first thin-film transistor or the second thin-film transistor, wherein the light-blocking layer and the first electrode are disposed at the same vertical level, wherein the light-blocking layer overlaps at least one of the first thin-film transistor or the second thin-film transistor.