1202 results about "Block layer" patented technology

The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, a buffer layer, an N-type semiconductor layer, a low-temperature stress release layer, a multi-quantum well light-emitting layer, an electron blocking layer and a P-type semiconductor layer. The multi-quantum well light-emitting layer comprises a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer which are stacked in sequence, and each of the first sub-layer, the second sub-layer, the third sub-layer and the fourth sub-layer comprises an InGaN quantum well layer and a GaN quantum barrier layer which are periodically and alternately stacked; an electron injection layer is inserted into at least one of the GaN quantum barrier layer of the first sub-layer, the GaN quantum barrier layer of the second sub-layer and the GaN quantum barrier layer of the third sub-layer; and a hole injection layer is inserted into the GaN quantum barrier layer of the fourth sub-layer. By implementing the invention, the electron hole matching degree of the multi-quantum well light-emitting layer can be improved, so that the luminous efficiency of the light-emitting diode is improved.

A distributed storage management system comprising nodes that form a cluster, a distributed block layer that spans the nodes in the cluster, and file system instances deployed on the nodes. Each file system instance comprises a data management subsystem and a storage management subsystem disaggregated from the data management subsystem. The storage management subsystem comprises a node block store that forms a portion of the distributed block layer and a storage manager that manages a key-value store and virtualized storage supporting the node block store. A file system volume hosted by the data management subsystem maps to a logical block device hosted by the virtualized storage in the storage management subsystem. The key-value store includes, for a data block of the logical block device, a key that comprises a block identifier for the logical block device and a value that comprises the data block.

The embodiment of the invention provides a display panel and a display device, relates to the technical field of display, and aims to improve the large-viewing-angle peep-proof effect of the display panel. The display panel includes: a substrate; a plurality of light-emitting elements located at one side of the substrate, wherein the light-emitting elements comprise a first light-emitting unit and a second light-emitting unit; the first light blocking layer is located on the side, away from the substrate, of the first light emitting unit, and the first light blocking layer comprises a first opening; the second light blocking layer is located on the side, away from the substrate, of the first light blocking layer, and the second light blocking layer comprises a second opening; the first opening and the second opening are at least partially overlapped with the first light-emitting unit in the direction perpendicular to the plane where the substrate is located; the area of the first opening is larger than that of the second opening, and the orthographic projection of the second light blocking layer on the plane where the substrate is located at least partially covers the edge of the first opening.

A GaN-based blue-green LED epitaxial structure, relating to the field of semiconductor photoelectric devices. The GaN-based blue-green LED epitaxial structure comprises a substrate, and a buffer layer, a dislocation regulation layer, a U-GaN layer, an N-GaN layer, a multi-quantum-well layer, an electron blocking layer and a P-GaN layer which are sequentially stacked on the substrate, wherein the dislocation regulation layer is of a periodic structure with the number of periods ranging from 2 to 10, and each period comprises a GaN layer and an Si-doped GaN layer that are sequentially stacked. The crystal quality of the epitaxial structure can be improved, thereby improving the light-emitting efficiency and the antistatic performance of the blue-green LED based on the epitaxial structure.

Embodiments of the present application relate to the technical field of display, and provide a display panel and a display device, for use in improving the wide-angle anti-peeping effect of the display panel. The display panel comprises: a substrate; a plurality of light-emitting elements located on one side of the substrate, wherein each of the light-emitting elements comprises a first light-emitting unit and a second light-emitting unit; a first light blocking layer located on the side of the first light-emitting unit distant from the substrate, wherein the first light blocking layer comprises a first opening; and a second light blocking layer located on the side of the first light blocking layer distant from the substrate, wherein the second light blocking layer comprises a second opening. In a direction perpendicular to the plane where the substrate is located, both the first opening and the second opening at least partially overlap the first light-emitting unit; and the area of the first opening is greater than that of the second opening, and the orthographic projection of the second light blocking layer on the plane where the substrate is located at least partially covers the edge of the first opening.

A display device includes a display area in which a plurality of first pixels and second pixels including a plurality of pixel electrodes spaced apart from each other are disposed, a first light blocking layer disposed in the display area and including a plurality of holes disposed to overlap the pixel electrodes, a plurality of color filters disposed on the first light blocking layer to correspond to the holes, and a second light blocking layer disposed on the color filter and disposed to correspond to the pixel electrodes of the second pixels, the first light blocking layer including a plurality of divided portions disposed around the holes of the second pixel and penetrating the first light blocking layer, and the color filters disposed in the second pixel and disposed to cover the hole of the first light blocking layer, where the divided portions are disposed to correspond to the holes.

Provided is a semiconductor laser and a display device thereof. The semiconductor laser includes a first semiconductor layer, a second semiconductor layer, and an active layer located therebetween; a first waveguide layer is disposed between the first semiconductor layer and the active layer, and a second waveguide layer is disposed between the second semiconductor layer and the active layer; an electron blocking layer is disposed between the second waveguide layer and the second semiconductor layer; the electron blocking layer includes at least a part of a P-type doped layer on a side close to the second semiconductor layer, in which a composition of the P-type doped layer is greater than 1E19−3; and a P-type doping concentration of the side of the electron blocking layer close to the second semiconductor layer is higher than a P-type doping concentration of the electron blocking layer away from the second semiconductor layer.

The invention belongs to the technical field of solar cells, and particularly relates to a fluorinated biguanide salt synergistically passivated perovskite solar cell and a preparation method thereof. The method comprises the following steps: S1, coating the surface of a perovskite light absorption layer with a fluorinated biguanide hydrochloride solution to form a synergistic layer; coating the surface of the synergistic layer with a halogenated phenylethylamine solution to form a synergistic passivation layer; and S2, arranging an electron transport layer and a hole blocking layer on the surface of the passivation layer. According to the invention, the synergistic passivation layer is introduced in the preparation process of the perovskite solar cell. The introduction of the fluorinated biguanide salt passivation layer can modify the perovskite crystal and generate the low-dimensional perovskite at the crystal boundary, and the second passivation layer can interact with the low-dimensional perovskite structure, thereby further protecting the perovskite film, improving the interface of the perovskite light absorption layer and the electron transport layer, and improving the short-circuit current density, open-circuit voltage and cell efficiency of the cell.

The invention discloses a light-emitting diode epitaxial wafer, a preparation method thereof and a light-emitting diode, and relates to the field of semiconductor photoelectric devices. The light-emitting diode epitaxial wafer sequentially comprises a substrate, a buffer layer, an intrinsic semiconductor layer, an N-type semiconductor layer, a multi-quantum well layer, an electron blocking layer and a P-type semiconductor layer. The P-type semiconductor layer comprises a Si3N4 layer, a first superlattice layer and a second superlattice layer which are sequentially stacked on the electron blocking layer, the first superlattice layer comprises a Mg-doped Al < x > Ga < 1-x > N layer and a Mg-doped GaN layer which are alternately stacked, and the second superlattice layer comprises a non-doped GaN layer and a Mg-doped In < y > Ga < 1-y > N layer which are alternately stacked. By implementing the invention, the luminous efficiency of the light-emitting diode can be improved.

The invention discloses a GaN-based blue-green light LED epitaxial structure and a preparation method thereof. The GaN-based blue-green light LED epitaxial structure comprises a substrate, and a buffer layer, a 3D layer, a U-GaN layer, an N-GaN layer, a multi-quantum well layer, an electron blocking layer and a P-GaN layer which are stacked on the substrate in sequence, the multi-quantum well layer comprises a shallow well transition layer, a high-temperature quantum well layer, a stress release layer and a low-temperature quantum well layer which are sequentially stacked, and the stress release layer comprises AlN layers and GaN layers which are periodically and alternately stacked. By implementing the invention, the luminous efficiency of the light-emitting diode under high current density can be effectively improved.

A semiconductor device includes: a lower structure; a plurality of horizontal layers horizontally oriented over the lower structure; a first conductive line commonly coupled to first ends of the horizontal layers and extending in a direction perpendicular to the lower structure; a plurality of second conductive lines crossing the horizontal layers, respectively; a plurality of data storage elements coupled to second ends of the horizontal layers, respectively, and stacked in a direction perpendicular to the lower structure; capping layers disposed between the second conductive lines and the first conductive line; and blocking layers disposed between the capping layers and the first conductive line.

Semiconductor devices including one or more hydrogen-blocking layers are described. In one example, a semiconductor device comprises a semiconductor substrate including a source region, a gate region, a drain region, and a drain access region, where a heterojunction structure is disposed over the semiconductor substrate. The heterojunction structure includes a buffer layer over the semiconductor substrate and a barrier layer over the buffer layer. A p-doped III-N layer is disposed over the barrier layer in the gate region and a gate electrode is formed over the p-doped III-N layer. A first hydrogen-blocking layer is disposed over the gate electrode where the first hydrogen-blocking layer is configured to arrest diffusion of hydrogen into the p-doped III-N layer from a dielectric layer formed after forming the gate electrode.

The embodiment of the invention provides a laser array and a laser radar, and relates to the technical field of optical perception. The differential resistance of the laser array is adjustable, and the optical power of the output emitted laser is adjustable. The laser array comprises a first laser and a second laser; the first laser comprises a first reflecting layer, a first active layer and a second reflecting layer which are sequentially arranged along the epitaxial direction, and a first oxidation hole is formed in the second reflecting layer; the second laser comprises a third reflecting layer, a second active layer and a fourth reflecting layer which are sequentially arranged in the epitaxial direction, a second oxidation hole is formed in the fourth reflecting layer, and a light blocking layer is further arranged on the side, away from the second active layer, of the fourth reflecting layer. The projection of the light blocking layer on the second active layer is overlapped with the projection of the second oxidation hole on the second active layer; the first laser is electrically connected with the second laser.

To provide a nitride semiconductor light-emitting element which emits ultraviolet light with improved luminous efficiency.SOLUTION: The light-emitting element includes an n-side semiconductor layer, a p-side semiconductor layer, and an active layer positioned between the n-side semiconductor layer and the p-side semiconductor layer and also includes an electron blocking layer between the p-side semiconductor layer and the active layer. The active layer includes a first barrier layer containing Al, a first well layer containing Al and emitting ultraviolet light, a second barrier layer containing Al, and a second well layer being in contact with the electron blocking layer, containing Al, and emitting ultraviolet light in order from the n-side semiconductor layer side. The Al composition ratio of the second well layer is higher than the Al composition ratio of the first well layer. The film thickness of the second well layer is smaller than the film thickness of the first well layer.SELECTED DRAWING: Figure 2

The invention discloses a compound containing triazine and spiroanthracene fluorene structures and an organic electroluminescent device thereof, and belongs to the technical field of semiconductor materials. The compound containing the triazine and spiroanthracene fluorene structure is shown as a general formula (1): # imgabs0. The compound containing the triazine and spiroanthracene fluorene structure is applied to an organic thin film layer of an organic electroluminescent device, and is particularly applied to a hole blocking layer in an electron transmission region thin film layer of the organic thin film layer. The compound containing the triazine and spiroanthracene fluorene structure has good stability and good hole blocking capability, and when the compound containing the triazine and spiroanthracene fluorene structure is used as a material of an organic electroluminescent device, the efficiency of the device is remarkably improved, and the service life of the device is remarkably prolonged.

A display device includes: a substrate including a display area having a plurality of pixel areas and a non-display area surrounding at least one side of the display area; a light-blocking layer disposed on a first surface of the substrate and including light transmissive areas to allow incident light to pass therethrough; a circuit-element layer disposed on the light-blocking layer and including a plurality of conductive layers; a light-emitting element layer disposed on the circuit-element layer and including light-emitting elements; and a sensor layer disposed on a second surface of the substrate opposing the first surface to sense the light passing through the light transmissive areas. The light-blocking layer is electrically coupled to at least one of the plurality of conductive layers.

A semiconductor device is provided. The semiconductor device includes a semiconductor device comprising: a first stacked field effect transistor (FET) structure in a first device area, the first stacked FET structure comprising a first pull down (PD) transistor, and a first pull up (PU) transistor disposed over the first PD transistor, a first metal gate that is shared by the first PD transistor and the first PU transistor; and an oxygen blocking layer provided on the first metal gate.

A display device includes a display area in which a plurality of pixels, each including a plurality of pixel electrodes spaced apart from each other, are disposed. A first light blocking layer is disposed in the display area and includes a plurality of holes overlapping the plurality of pixel electrodes. A plurality of color filters is disposed on the first light blocking layer and respectively corresponds to the plurality of holes. A second light blocking layer is disposed on the color filter and corresponds to the pixel electrodes of some of the plurality of pixels. The second light blocking layer surrounds the pixel electrodes of some of the plurality of pixels in a plan view and includes a plurality of light blocking patterns having different widths.

An electronic device includes a first substrate, a second substrate overlapped with the first substrate and having a first side and a second side opposite to the first side, a sensor unit disposed between the first substrate and the second substrate, a first blocking layer disposed on the first side, and a second blocking layer disposed on the sensor unit. The second side is disposed between the sensor unit and the first side. The first blocking layer has a first opening, and the second blocking layer has a second opening. A width of the first opening is smaller than a width of the second opening.

A thin film transistor substrate for a display device can include a light blocking layer disposed on a substrate, an active layer overlapping with the light blocking layer, a first lower hole penetrating through the active layer, a gate electrode overlapping with the active layer, a source electrode penetrating through the active layer and contacting with the light blocking layer, an insulating layer disposed on the active layer, and a first upper hole penetrating through the insulating layer. Also, the source electrode includes a first lower electrode disposed in the first lower hole and a first upper electrode disposed in the first upper hole, in which a width of the first upper electrode is greater than a width of the first lower electrode.

The invention provides a trans-perovskite solar cell containing a fluorine arene phosphoric acid function compensation layer and a preparation method thereof, and the solar cell comprises a conductive substrate, a hole transport layer, a self-assembly monomolecular layer, a function compensation layer, a light active layer, an electron transport layer, a hole blocking layer and a back electrode which are sequentially stacked from bottom to top. The material of the function compensation layer is fluorine-containing aromatic hydrocarbon phosphoric acid. The fluorine-containing aromatic phosphoric acid provided by the invention can make up the anchoring defect on the basis of a self-assembled monomolecular layer, and can effectively passivate the defect at the bottom of perovskite through a plurality of active sites at the same time; the problem of non-ideal performance and stability caused by excessive defects at the self-assembled monomolecular layer / perovskite buried bottom interface of the trans-perovskite solar cell is solved, and a valuable scheme is provided for commercialization of the trans-perovskite solar cell in the future.

The invention discloses a special-shaped structure heat-proof layer forming method, and belongs to the technical field of composite material forming. The forming method comprises the following steps: preparing a first prepreg, cutting the first prepreg according to a first angle to obtain an inner-layer prepreg block, and cutting the first prepreg according to a second angle to obtain an outer-layer prepreg block; the inner-layer prepreg blocks are laid on the force bearing body layer by layer in a warp and weft staggered mode, the outer-layer prepreg blocks are laid on the inner-layer prepreg blocks layer by layer in a warp and weft staggered mode, and a large-area heat-proof layer laying layer set is obtained; preparing to obtain an edge heat-proof layer blank body; cutting off a thin-wall area on the edge heat-proof layer blank body; placing the edge heat-proof layer blank body after the thin-wall area is cut off on a mould pressing tool, laying a second prepreg in the area of the mould pressing tool corresponding to the cut-off part, and pre-pressing to obtain an edge heat-proof layer composite blank body; embedding the edge heat-proof layer composite blank body into the prepreg laying layer group to obtain a heat-proof layer blank body with a special-shaped structure; and performing curing treatment on the heat-proof layer blank with the special-shaped structure to obtain the heat-proof layer with the special-shaped structure.

A display device includes a substrate, a semiconductor layer on the substrate, a gate insulating layer on the semiconductor layer, a first upper hydrogen blocking layer on the gate insulating layer and having a positive hydrogen formation energy, a first upper hydrogen capturing layer on the first upper hydrogen blocking layer corresponding to a central portion of the semiconductor layer and having a negative hydrogen formation energy, a gate electrode on the first upper hydrogen capturing layer, a source electrode and a drain electrode connected to both end portions of the semiconductor layer, and a passivation layer on the gate electrode, the source electrode and the drain electrode.

The present disclosure provides techniques to reduce or eliminate contaminants in a waveguide resulting from the waveguide fabrication process. A blocking layer is deposited on a grating layer to protect the grating layer from contamination, e.g., via diffusion, from a hardmask layer that is used to pattern the grating layer. Accordingly, the optical gratings resulting from the patterning of the grating layer have little or no contamination from the hardmask layer, thereby increasing the optical performance of the final waveguide product.

The invention provides a display panel and a display device. The display panel comprises a substrate, a light emitting structure layer, a light barrier layer and a pixel defining layer. Wherein the light-emitting structure layer is located on one side of the substrate, and the light-emitting structure layer comprises a plurality of peep-proof sub-pixels. The light blocking layer and the light-emitting structure layer are located on the same side of the substrate, the light blocking layer comprises at least one light blocking structure, and each light blocking structure surrounds the light-emitting area of one peep-proof sub-pixel and is used for blocking part of light emitted by the peep-proof sub-pixel. The pixel limiting layer is located on the side, away from the substrate, of the light blocking structure and covers the light blocking structure. The pixel limiting layer is provided with a plurality of pixel openings, and each peep-proof sub-pixel is at least partially located in one pixel opening. The display device comprises the display panel.

The invention provides a light-emitting diode chip and a preparation method thereof, and the preparation method of the light-emitting diode chip comprises the steps: providing a substrate needed by growth, and sequentially depositing an N-type semiconductor layer, an active light-emitting layer and a P-type semiconductor layer on the substrate; preparing an N-type conductive through hole in the P-type semiconductor layer; preparing a current expansion layer on the P-type semiconductor layer and the N-type conductive through hole; preparing a current blocking layer on the current expansion layer, the P-type semiconductor layer which is not covered by the current expansion layer and the N-type conductive through hole which is not covered by the current expansion layer; preparing a current blocking layer through hole in the current blocking layer; preparing a first semiconductor layer on the current blocking layer and the current blocking layer through hole; stripping the substrate to completely expose the bottom of the N-type semiconductor layer; preparing a second semiconductor layer at the bottom of the N-type semiconductor layer; and preparing an N-type bonding pad on the first semiconductor layer.

According to the GaN-based LED epitaxial structure, the preparation method thereof and the LED chip provided by the invention, electron leakage is reduced through the electron blocking layer, and meanwhile, the hole injection layer comprising the thin AlN layer is adopted between the multi-quantum well layer and the electron blocking layer in the epitaxial structure, so that the barrier barrier height during hole transport can be reduced, and the hole transport efficiency can be improved. In addition, an effective path for hole tunneling is provided, energy during hole injection is increased, hole injection efficiency is remarkably improved, the concentration of holes injected into the multi-quantum well layer is increased, and then the luminous efficiency of the LED is improved.

The invention relates to a preparation method of a back contact solar cell and a photovoltaic module, and the preparation method comprises the steps: providing a silicon substrate which comprises a first surface and a second surface, and the first surface comprises a first region and a second region; forming a tunneling oxide layer, a doped semiconductor layer and a laser barrier layer on the first surface; performing laser removal on the laser barrier layer in the first region and the doped semiconductor layer and the tunneling oxide layer at the adjacent positions of the first region and the second region; texturing treatment and etching treatment are carried out on the silicon substrate, the doped semiconductor layer and the tunneling oxide layer located in the first region and the laser barrier layer located in the second region are removed, an isolation region is formed at the position where the first region is adjacent to the second region, the isolation region comprises a groove, and textured structures are formed on the side wall and the bottom wall of the groove and the second surface. The preparation process of the battery can be simplified, the probability of electric leakage of the battery is reduced, the manufacturing efficiency and the yield of the battery are improved, and the reliability of the battery is improved.

A method, device, and system for starting containers is provided. The method includes (i) in response to determining to start a container, determining whether a container layer for the container has been previously converted to a block storage format; (ii) in response to determining that the container layer has not been previously converted to a block storage format, downloading an archived version of the container layer, converting the archived version into a block storage format version of the container layer, storing the block storage format version of the container layer into a blob storage, and starting the container; and (iii) in response to determining that the container layer has been previously converted to a block storage format, starting the container based at least in part on the block storage format version.

A semiconductor device may include a gate structure including stacked conductive layers and insulating regions disposed between the conductive layers; a channel layer extending through the gate structure; data storage patterns surrounding the channel layer and disposed between the channel layer and the conductive layers, respectively; oxidation patterns surrounding the channel layer and disposed between the channel layer and the insulating regions, respectively; and a blocking layer surrounding the data storage patterns and the oxidation patterns and including concave portions disposed to correspond to the insulating regions.