20 results about "Charge layer" patented technology

This invention discloses a superlattice multiplication layer avalanche diode and its fabrication method. The single-photon avalanche diode includes a graphene transparent electrode and, from bottom to top, an InP substrate, an n-type buffer layer, a superlattice absorption region, a p-type charge layer, a superlattice gradient region, a superlattice multiplication region, a p-type contact layer with a p-type contact window, and a passivation layer. The graphene transparent electrode is grown on the passivation layer and the p-type contact window, forming an ohmic contact with the p-type contact region. Magnetic metal nanoparticles that generate a local magnetic field are embedded in the superlattice multiplication region. The magnetic metal nanoparticles are uniformly distributed in-plane within a depth range of 5-400 nm from the interface in the light-gathering direction of the superlattice multiplication region. This invention combines the internal bandgap optimization of the superlattice with the external limiting pump capability of graphene to produce a synergistic effect, providing a single-photon avalanche diode with low dark count rate, weak afterpulse effect, high detection efficiency, and the ability to operate at relatively high temperatures.

The application belongs to the technical field of lithium ion battery electrode materials, and discloses a method for in-situ coating of magnesium borate on a lithium ion battery positive electrode material. By adjusting the feeding ratio of a magnesium source and a boron source, and by using the positive charge layer on the surface of the lithium ion battery positive electrode material, the borohydride groups with negative charges dispersed in the solution, and the magnesium ion groups with positive charges, a positive-negative-positive charge distribution layer is constructed. Then, through a hydrolysis reaction, a uniform and complete amorphous magnesium borate coating is in-situ coated on the surface of the positive electrode material, a series of in-situ coating of magnesium borate (Mg2B2O5, Mg3B2O6, MgB4O7) is realized, and a lithium ion battery positive electrode material with good interface stability in air and electrolyte is prepared. The method provided by the application has remarkable effects, simple and efficient steps, low cost, and is easy to realize industrialized preparation.

This invention discloses a cerium-doped InP-based single-photon avalanche detector for space communication and its fabrication method. The detector's epitaxial structure, from bottom to top, includes a substrate, an N-type buffer layer, an absorption layer, a band transition layer, an N-type charge layer, an intrinsic multiplication layer, an intrinsic InP layer, and a cerium-doped P-type contact layer. The core innovation lies in the dual radiation-resistant design of the Ce-doped P-type contact layer and the Ce-doped modified stacked passivation film. The fabrication method involves MOCVD epitaxial growth, spin-coating source diffusion to prepare the P-type contact layer, ICP etching and wet repair, magnetron sputtering doping, and electrode fabrication. This invention utilizes Ce's unique electronic structure to suppress radiation-induced defects and combines this with an SACM structure to optimize the electric field distribution, achieving low dark count rate, high detection sensitivity, and excellent neutron radiation resistance. The process is compatible with existing semiconductor production lines and is suitable for wafer-level mass production, meeting the high-reliability single-photon detection requirements of aerospace missions such as space laser communication and quantum key distribution.

Avalanche photodiode designs having separate absorption and multiplication regions are disclosed. The avalanche photodiode designs include a charge layer tailored to allow charge carrier transport from the absorption layer to the multiplication layer and reduce the dark current when the avalanche photodiode is reverse biased.

The application discloses a SPAD detector based on an epitaxial structure design and a preparation method thereof. 0.53 Ga 0.47 As / In 0.52 Al 0.48 As superlattice transition layer, i-In 0.53 Ga 0.47 As absorption layer, AlAsSb / InAlAs composite barrier layer, InAlAs band transition layer, InAlAs charge layer, InAlAs multiplication layer and InGaAs cap layer, after epitaxial structure growth is completed, a guard ring and an active area step diffusion region are formed through process design and semiconductor technology, and then a uniform electric field can be formed in the center of the SPAD through one-time diffusion; the application can promote efficient and low-loss transmission of electrons, effectively inhibit trap-assisted tunneling TAT and SRH recombination to generate dark counts, and the uniform electric field formed can inhibit edge breakdown; and the single-photon detector based on the above epitaxial structure has low dark counts and after-pulses at room temperature.

An avalanche photodiode (APD) includes a first electrode, a substrate layer, a buffer layer, a gain layer, a gradient layer, an absorption layer, a diffusion barrier layer, a contact layer, and a second electrode. The gain layer, the gradient layer, and the absorption layer are arranged vertically in sequence. The gain layer, the gradient layer, and the absorption layer are located between the buffer layer and the diffusion barrier layer. The gain layer includes at least two gain units, and the gain units are arranged in a stacked manner. Each of the gain units includes a multiplication layer and a charge layer that are arranged vertically. A distance between the charge layer and the gradient layer is less than a distance between the multiplication layer and the gradient layer.

This invention provides a technology for effectively reducing noise caused by through-holes and through-electrodes in a photoelectric conversion device constructed by stacking multiple substrates. [Solution] The photoelectric conversion device comprises a first semiconductor layer on which a photoelectric conversion element is provided, a second semiconductor layer having a first surface and a second surface opposite to the first surface, with an element electrically connected to the photoelectric conversion element provided on the first surface, a through electrode provided in a through hole penetrating the second semiconductor layer, a fixed charge layer provided in contact with the inner surface of the through hole, a first insulating layer provided between the fixed charge layer and the through electrode, and a second insulating layer made of an insulating material containing silicon and provided in contact with the second surface.

A photoelectric conversion device includes a first semiconductor layer provided with a photoelectric conversion element, a second semiconductor layer having a first face and a second face opposite to the first face and provided with an element electrically connected to the photoelectric conversion element on the first face, a through-electrode provided in a through-hole penetrating the second semiconductor layer, a fixed charge containing layer provided in contact with an inner face of the through-hole, a first insulating layer provided between the fixed charge containing layer and the through-electrode, and a second insulating layer including an insulating material and provided in contact with the second face and the fixed charge containing layer.

To provide a power generation element that is easy to manufacture and capable of improving power generation performance. [Solution] The present invention relates to a power generation element comprising two electrodes spaced apart from each other, and a charged body placed in contact between the two electrodes, wherein the charged body includes a positively charged layer and a negatively charged layer in surface contact with the positively charged layer, and the positively charged layer includes rubber as a matrix material and a conductive filler with higher conductivity than the rubber.

A semiconductor device comprises a stacked structure in which a plurality of insulating layers and a plurality of electrode layers are alternately and repeatedly stacked. A channel structure is disposed penetrating the stacked structure. The channel structure comprises a channel layer; and an information storage pattern between the channel layer and the plurality of electrode layers. The information storage pattern comprises a tunnel insulating layer between the channel layer and the plurality of electrode layers; a charge storage layer between the tunnel insulating layer and the plurality of electrode layers; and a blocking layer between the charge storage layer and the plurality of electrode layers. The blocking layer comprises one or more sub-blocking layers having an oxide of a first element; and one or more fixed charge layers. Each of the one or more fixed charge layers comprises an oxide of a second element and a third element doped into the oxide of the second element. The proportion of the third element within the one or more fixed charge layers is 0.5 wt% to 5 wt%.

This invention discloses a laterally driven electrophoretic display device and electronic device. The electrophoretic display device includes: a transparent upper substrate and a transparent lower substrate disposed opposite to each other, transparent electrodes, a charged layer with a hysteresis electric field dipole effect, and an electronic ink containing component. The transparent electrodes include a transparent common electrode disposed on the entire lower surface of the transparent upper substrate and first and second pixel electrodes spaced apart on the upper surface of the transparent lower substrate. The charged layer is disposed on the upper surfaces of the first pixel electrode, the transparent lower substrate, and the second pixel electrode, and is made of a hydrophilic coating and a charged material with a hysteresis electric field dipole effect. The electronic ink containing component is disposed between the common electrode and the charged layer, and contains electronic ink composed of a non-polar electrophoretic medium, weakly polar electrophoretic particles, a charge control agent, and a thickener. This invention enables the electrophoretic display device to maintain display for a long time when power is off, improving its lateral bistable performance, drive response speed, and display refresh rate.

The invention provides a sulfide solid electrolyte, a preparation method thereof and an all-solid-state battery, and relates to the field of all-solid-state battery preparation. The sulfide solid electrolyte comprises positive electrode particles, a chemical passivation core layer, an ion conduction gradient layer and a mechanical buffer layer, the chemical passivation core layer coats the positive electrode particles, the ion conduction gradient layer coats the chemical passivation core layer, and the mechanical buffer layer coats the ion conduction gradient layer; the chemical passivation core layer is an amorphous lithium phosphate layer; the ion conduction gradient layer comprises a lithium phosphate layer and a lithium thiophosphate layer; and the mechanical buffer layer is an argyrodite type sulfide solid electrolyte layer containing a nano whisker structure. The structure realizes continuous gradient transition of interface components, ionic conductivity and Young modulus, and synchronously solves the problems of chemical side reaction, space charge layer effect and mechanical contact failure.

The application discloses an avalanche photodiode and a manufacturing method thereof. The substrate of the avalanche photodiode is a semi-insulating InP substrate, and the multiplication layer and the charge layer of the avalanche photodiode are InAlAs / GaAsSb superlattices. The application uses InAlAs / GaAsSb superlattice material as the multiplication layer of the InP-based avalanche photodiode, and has the advantages of low excess noise factor and low-cost MOCVD growth, compared with the InP, InAlAs or InAlAsSb multiplication layer in the prior art.

This invention provides a silicon-based germanium avalanche photodetector, comprising a substrate; an N-type doped silicon layer disposed on the substrate and electrically isolated from it; an intrinsic silicon layer disposed on the side of the N-type doped silicon layer away from the substrate; a P-type doped silicon charge layer disposed on the side of the intrinsic silicon layer away from the substrate; and a P-type doped germanium absorption layer disposed on the side of the P-type doped silicon charge layer away from the substrate. The detector employs a silicon waveguide structure design, allowing optical signals to couple into the P-type doped germanium absorption layer via the silicon layer beneath the P-type doped germanium absorption layer. A distributed Bragg reflector is provided at the detector's output end to reflect any remaining unabsorbed optical signals emitted by the detector. This silicon-based germanium avalanche photodetector achieves low dark current, low voltage, and high speed, thereby improving detector sensitivity and detection performance.

Photodetectors, transistors, and metal interconnect structures may be formed on a front side of the semiconductor substrate. A trench is formed through a backside surface of the semiconductor substrate toward the front side by an anisotropic etch process, which provides a vertical or tapered surface with a first root-mean-square surface roughness greater than 0.5 nm. A single crystalline semiconductor liner is deposited by performing an epitaxial growth process at a growth temperature less than 500 degrees Celsius on the vertical or tapered surface of the trench. A physically exposed side surface of the single crystalline semiconductor liner may have a second root-mean-square surface roughness less than 0.5 nm. At least one dielectric metal oxide liner having a uniform thickness may be formed on the physically exposed side surface to provide a uniform negatively charged film, which may be advantageously used to reduce dark current and white pixels.

A wearable comprising (1) a flexible battery that includes coated electrode segments that each contain positively charged and negatively charged layers, (2) an exoskeleton coupled to the flexible battery and fitted to contour the coated electrode segments, and (3) a band that forms a cavity shaped to fit the flexible battery and the exoskeleton. Various other apparatuses, devices, systems, and methods are also disclosed.

A self-cleaning cable for lunar surfaces with self-collection of environmental electrostatic charge relates to the field of cable structure technology suitable for lunar environments. Addressing the problems of existing cables easily accumulating lunar dust, experiencing decreased thermal management performance, and insulation wear in the high-static, high-dust environment of the moon, this invention proposes a self-cleaning solution based on the utilization of environmental electrostatic energy. The cable employs a coaxial multi-layer structure consisting of a conductive core, a basic insulation layer, a micro-electrostatic rectifier network, a repulsive field output electrode, and a geometric induction shell, arranged sequentially from the inside out. The geometric induction shell captures environmental charges and introduces them into the micro-electrostatic rectifier network for rectification and storage. The obtained high-voltage electrical energy is output to the repulsive field output electrode, forming a charge layer on the cable surface with the same polarity as lunar dust, thereby creating a continuous electrostatic repulsive field around the cable. This design is suitable for the long-term stable operation of cables in lunar power transmission and communication systems.

The application discloses a radioactive measurement sensor and belongs to the technical field of radioactive quantitative measurement. The radioactive measurement sensor solves the problems of poor energy resolution and large occupied volume of a radioactive measurement element in the prior art. The radioactive measurement sensor comprises a silicon substrate layer, an avalanche photodiode located on the silicon substrate layer, and an ion exciter arranged in a ring array on the avalanche photodiode. The ion exciter comprises a charge layer embedded on the avalanche photodiode, a first electrode layer located on the charge layer, a CsI crystal lens layer located on the first electrode layer, and a micro-hole arranged in the center of the first electrode layer. A spherical protrusion is arranged on one side of the CsI crystal lens layer, away from the avalanche photodiode. The CsI crystal lens layer collects rays and performs gas ionization in the micro-hole. A second electrode layer is located at the bottom of the silicon substrate layer. The radioactive measurement sensor has the advantages of simple structure, accurate and reliable measurement, and the like.

This invention discloses a single-photon avalanche diode based on multi-element rare-earth co-doping and its fabrication method, aiming to solve the problems of excessively high room-temperature dark count rate caused by bulk and interface defects in existing InP / InGaAs-based SPADs, and the trade-off between core performance indicators. The core structure of the device includes an InP substrate and sequentially epitaxial layers of a buffer layer, an absorption layer, a gradient layer, a charge layer, and a multiplication layer, with at least one functional layer using two or more rare-earth co-doped materials selected from Gd. 3+ La 3+ Pr 3+ 、Nd 3+ Eu 3+ Rare-earth ion co-doping enables targeted cross-scale defect passivation and the construction of shallow trap energy level networks. This invention suppresses the dark count core generation mechanism at the intrinsic material level, synergistically improving photon detection efficiency and reducing afterpulse probability. Furthermore, the fabrication process is fully compatible with existing semiconductor production lines, facilitating industrial-scale mass production and making it suitable for fields such as quantum communication, lidar, and fluorescence lifetime imaging.

This application relates to an electrolyte, its preparation method, and its application, belonging to the field of seawater electrolysis for hydrogen production and electrochemical corrosion prevention technology. The electrolyte of this application includes an additive and seawater; the additive comprises at least one substance satisfying the general formula HS-R-X or its in-situ deprotonated form S. ‑ -R-X is an amphiphilic mercapto-containing compound or its salt, wherein R is an organic linker group and X is an anionic terminal group, wherein the anionic terminal group is a sulfonate group -SO3. ‑ and / or carboxylate group -COO ‑ During electrolysis, an M-S adsorption layer is formed in situ between the thiol end and the anode substrate. Simultaneously, a highly hydrated negatively charged layer is formed at the interface facing the solution side using the anionic ends. This highly hydrated negatively charged layer enhances the adsorption of Cl-. ‑ Electrostatic repulsion and hydration repulsion occur, reducing Cl... ‑ The enrichment and specific adsorption probability at the anode interface inhibits chloride ion-induced corrosion. This application is applicable to the interface protection of the anode substrate in the process of hydrogen production by electrolysis of natural seawater, and features universal raw materials, ease of use, and suitability for on-site addition.