170 results about "Charge layer" patented technology

The invention provides a preparation method of an electron-ion mixed conductor sulfide electrolyte material, which is characterized by comprising the following steps: taking a sulfide solid electrolyte as an inner core, taking a two-dimensional transition metal layered material MXene as a surface coating layer, and coating the surface of the inner core with the two-dimensional transition metal layered material MXene, and carrying out ball milling and calcining to obtain the electron-ion mixed conductor sulfide electrolyte material. The two-dimensional transition metal layered material MXene is used as a surface coating layer, the air stability of the sulfide solid electrolyte is improved, calcination treatment is carried out, S in the sulfide solid electrolyte is combined with metal ions in MXene, the sulfide solid electrolyte has high electronic conductivity, the appearance of a space charge layer can be inhibited, and the performance of the sulfide solid electrolyte is improved. The electronic conductivity of the positive electrode is improved, the multiplying power of a battery cell is improved, the content of conductive carbon is reduced, and the intrinsic ion conductivity of sulfide electrolyte can be kept to the maximum extent.

The invention discloses a stress balance InP-InGaAs avalanche photodetector and a preparation method thereof. An n-type InP buffer layer, an unintentionally doped In < 0.53 > Ga < 0.47 > As bottom absorption layer, a plurality of groups of unintentionally doped stress matching InGaAs absorption layers, an unintentionally doped In < 0.53 > Ga < 0.47 > As top absorption layer, an n-type InP charge layer and an unintentionally doped InP cover layer are sequentially grown on an n-type InP substrate; the optimal photosensitive wavelength of the avalanche photodetector is 2.0 microns, and the device can stably work at room temperature at low dark current.

The invention relates to a high-speed low-dark-current three-step structure avalanche photodetector and a preparation method thereof, and belongs to the technical field of semiconductor devices. Comprising an intrinsic InP substrate, an N-type InAlAs ohmic contact layer, an intrinsic InAlAs transition layer, an N-type InAlAs charge layer, an intrinsic InAlAs multiplication layer, a P-type InAlAs charge layer, an intrinsic InAlGaAs transition layer, an intrinsic InGaAs absorption layer, a gradient-doped P-type InGaAs absorption layer and a P-type InAlAs ohmic contact layer which are stacked from bottom to top. The intrinsic InGaAs absorption layer 8 and the N-type InAlAs ohmic contact layer 2 are both of a step structure so as to form a three-stage step structure of the photoelectric detector. According to the invention, through growing the SiNx antireflection film with the refractive index of 1.85 and the thickness of 210 nm on the light incident surface, the reflectivity of incident light can be less than 1%. For an optical signal with the wavelength of 1550 nm, the single light absorption quantum efficiency can reach 0.45.

The invention provides an avalanche photodetector chip, which can be applied to the technical field of optoelectronic devices, and comprises a substrate; the epitaxial layer is located on the substrate, the epitaxial layer comprises an N-type contact layer, a multiplication layer, a charge layer, a first transition layer, an absorption layer, a second transition layer, a cap layer and a P-type contact layer which are sequentially arranged, the epitaxial layer comprises an inclined mesa structure, and the top surface of the inclined mesa structure is the surface, away from the substrate, of the P-type contact layer; and the bottom surface of the inclined mesa structure is an N-type contact layer. Through the design of the inclined mesa structure, the opposite area between the layers of the upper mesa and the lower mesa can be reduced, the parasitic capacitance of the chip is reduced, the high-speed characteristic of the chip is improved, no extra process is added, and the preparation is simpler. The invention also provides a preparation method of the avalanche photodetector chip.

A method of making a single-photon detector includes growing an epitaxial multi-layer structure that includes a buffer layer, an absorption layer, a transition layer, a field control charge layer, a multiplication layer, an inversion layer, a migration layer, a window layer, and an Ohmic contact layer sequentially on a substrate. A curved diffusion region is formed in the window layer and the Ohmic contact layer via a diffusion process. A mesa structure is formed by etching the epitaxial multi-layer. A light input window is formed on the substrate. A p-type electrode is formed on the Ohmic contact layer, and an n-type electrode is formed on the substrate. The inversion layer provides supplementary regulation of an electric field distribution that is regulated by the field control charge layer. A single-photon detector made from the method, and a single-photon detector array made with a multitude of the single-photon detectors are also provided.

The invention discloses a preparation method of a high-conductivity and stable sulfide electrolyte and an all-solid-state battery, the preparation method comprises the following steps: in an inert atmosphere, manually grinding an original sulfide electrolyte and an ammonium salt, and then carrying out ball-milling mixing treatment to obtain a mixture; then pressing the mixture into a flaky mixed solid; and carrying out heat treatment on the flaky mixed solid, and then grinding to obtain the high-conductivity stable sulfide electrolyte. The prepared sulfide solid electrolyte can be stably matched with an unmodified oxide positive electrode and a lithium negative electrode, the problems of positive electrode interface side reaction, space charge layer effect and the like are inhibited, and the problems of negative electrode interface dendritic crystal growth, electrolyte reduction and the like are solved; sulfur atoms in the sulfide electrolyte are replaced by halogen atoms in a site-occupying manner, so that the structure disorder degree is increased, the ion migration barrier is reduced, and the self ion conductivity is further improved; the halide coating layer can isolate water molecules in air and improve the air stability of the electrolyte.

The invention provides an array type composite emitter ionic liquid electrospray thruster containing a far-end electrode, and relates to the technical field of spaceflight thrusters, an insulating material is adopted to process a composite emitter assembly, so that a double charge layer is generated at an ionic liquid electrode component, electrochemical reaction cannot be generated at an inner flow channel of a composite emitter, and the composite emitter assembly is made to be uniform. The problem that an electrochemical reaction product is directly generated in the composite emitter to block an internal flow channel of the emitter is avoided, and through the arrangement of a transverse flow channel, a vertical flow channel and a liquid collecting tank, a zigzag liquid flow channel is formed, so that the electrochemical reaction product generated at the electrode component is more uniform and uniform. When the ionic liquid flows, the ionic liquid is limited at the position of the electrode component by the flow channel wall surface and cannot enter the inlet of the base flow channel of the composite emitter assembly along with the ionic liquid, so that the influence of electrochemical reaction on the work of the composite emitter is prevented.

The infrared-enhanced single-photon avalanche diode device comprises a P + photosensitive region located at the center of the surface of the device, a P-injection region surrounding the outer side of the P + photosensitive region, a deep N well surrounding the outer side of the P-injection region, and a P-type substrate surrounding the outer side of the deep N well; the P + photosensitive region, the P-injection region and the deep N well are flush with the upper surface of the P-type substrate; the P + photosensitive region is used as a photosensitive surface to absorb photons, and a metal anode is led out from the surface to form ohmic contact; a P-type charge layer is embedded in the P-injection region, an N-buried layer is embedded in the deep N well, the N-buried layer is located below the P-type charge layer, and the P-type charge layer and the N-buried layer are located at the central position of the device; and the N buried layer forms a main avalanche region with a deeper depth. According to the invention, the detection efficiency of the silicon-based single-photon avalanche diode in a near-infrared band can be effectively improved.

The invention relates to the field of infrared photoelectric devices, in particular to a planar indium gallium arsenic avalanche photodiode which comprises a diffusion layer, an avalanche layer, a charge layer, a component gradient layer, a light absorption layer, a buffer layer and a substrate. The diffusion layer includes a convex diffusion region and a step diffusion region. The convex diffusion region is located above the step diffusion region. The avalanche layer is located below the step diffusion region. And the charge layer, the component gradient layer, the light absorption layer, the buffer layer and the substrate are sequentially arranged below the avalanche layer. The invention also comprises a method. The double-step diffusion avalanche photodiode has the advantages that the doping morphology of a traditional double-step diffusion avalanche photodiode can be modulated, an electric field is in step distribution with a strong center and a weak edge, the generated electric field is converged forwards, an effective photosensitive surface is not greatly attenuated, a protection ring structure can be omitted, the edge breakdown probability is reduced, and the effective duty ratio of the photosensitive surface is improved. Meanwhile, the method is compatible with the prior art, production equipment does not need to be changed, and the method is suitable for manufacturing the planar indium gallium arsenic avalanche photodiode.

The invention relates to the field of fiber manufacturing, in particular to a magnetic far-infrared dual-response fiber and a preparation method thereof.The magnetic far-infrared dual-response fiber comprises a polymer matrix and a magnetic far-infrared composite material evenly distributed in the polymer matrix; the magnetic far-infrared composite material comprises a nano ferroferric oxide core body and a zirconium carbide coating layer coating the core body, the interior of the nano ferroferric oxide core is doped with transition metal elements, so that the Curie point temperature of the nano ferroferric oxide core is 40-50 DEG C, and the surface of the nano ferroferric oxide core is modified by a cationic surface active agent to form a positive charge layer; hydroxyl is grafted on the surface of the zirconium carbide material. The Curie temperature of ferroferric oxide is precisely regulated and controlled to range from 40 DEG C to 50 DEG C through transition metal doping, a magnetic-far infrared synergistic energy transfer channel is designed and constructed in combination with a core-shell structure, intelligent response with the far infrared emissivity larger than or equal to 0.90 is achieved under body temperature triggering, and the functional strength and large-scale production feasibility are both achieved.

The disclosure relates to a method of manufacturing an avalanche photodetector (APD) (100). The method comprises: providing a silicon-on-insulator substrate comprising an oxide layer (101) and a silicon layer (102) disposed on the oxide layer, the silicon-on-insulator substrate comprising a central region (110) in which an n+ doped layer (103) is embedded in the silicon layer, an embedded intrinsic layer (104) is overlaying the n+ doped layer and an intrinsic multiplication layer (105) is overlaying the embedded intrinsic layer and the n+ doped layer; forming in the silicon layer on the central region, by a thermal drive-in process, a p+ doped charge layer (106) above the intrinsic multiplication layer, wherein the p+ doped charge layer forms with the embedded intrinsic layer, the intrinsic multiplication layer and the n+ doped layer a PIN junction of the APD which is configured to cause a photoelectric effect to convert light energy to electrical energy; and depositing on the central region a germanium absorption layer (107) overlaying the p+ doped charge layer, the germanium absorption layer being configured to function as a light absorption layer to absorb light.

The invention relates to the technical field of unmanned ship charging devices, in particular to an autonomous charging dock for linkage patrol unmanned ships and a charging method. The charging dock comprises a floating bank layer, a bottom plate layer and a charging layer, the floating bank layer is provided with a floating plate, the floating plate floats on the water surface, a charging notch is formed in one side of the floating plate, lifting mechanisms are arranged on the floating plate on the two sides of the charging notch, and a fixing frame is arranged on the floating plate at the inner end of the charging notch; the bottom plate layer comprises a lifting plate, the lifting plate is located at the charging notch of the floating plate, and the lifting mechanism is in driving connection with the lifting plate; the charging layer comprises a floating electromagnet and a fixed magnetic attraction charging head, the floating electromagnet is installed on the fixing frame in a sliding mode in the vertical direction, and the fixed magnetic attraction charging head is fixed to the end of the fixing frame. The problems that in the prior art, a dock is complex in structure, poor in anti-interference performance, insufficient in charging stability and the like are solved.

A photonic device includes a substrate, a P-type doped component disposed over the substrate, an N-type doped component disposed over the substrate, an optical absorption layer disposed over the substrate, and a charging layer disposed over the substrate. The optical absorption layer is disposed between the P-type doped component and the N-type doped component. The optical absorption layer and the substrate have different material compositions. A charging layer is disposed between the P-type doped component and the N-type doped component. The charging layer has a first side surface that is substantially linear. The first side surface is in direct contact with the optical absorption layer.

The present application belongs to the field of semiconductor process technology, and discloses a germanium on insulator short-wave infrared image sensor and a manufacturing method thereof, wherein the image sensor comprises: a readout circuit, a passivation layer, an N-type electrode and a P-type electrode, and a second silicon substrate, a thermal oxide layer, an aluminum oxide layer, a P-type heavily doped germanium layer, an intrinsic germanium sensing layer, a P-type charge layer, an intrinsic germanium quantum well layer, an intrinsic germanium layer and an N-type heavily doped germanium layer stacked in sequence, and a plurality of rectangular grooves of the same shape and distributed at preset intervals; the length of the P-type charge layer is less than the preset interval, and the number is greater than 0 and less than the number of rectangular grooves minus 1; the N-type electrode passes through the passivation layer to connect the P-type heavily doped germanium layer; the P-type electrode passes through the passivation layer to connect the N-type heavily doped germanium layer; each N-type electrode and each P-type electrode are connected to the readout circuit. The present application can process strong light signals and weak light signals at the same time, expands the dynamic response range of the image sensor, and enables it to adapt to a wider range of application scenarios.

To provide, in a device that performs display by applying an electric field to charged material, a structure for reducing after-images and a manufacturing method therefor.SOLUTION: A display device comprises a plurality of pixel electrodes and a charged layer (layer including a charged substance) provided on the pixel electrodes. In end parts of the adjacent two pixel electrodes of the plurality of pixel electrodes, one end has a concave part in an end face direction and the other end has a convex part in the end face direction, and the concave part and convex part form a pair to form a gap between the two pixel electrodes.SELECTED DRAWING: Figure 1

The present invention addresses the problem of providing a photoelectric conversion element which achieves both mass productivity and uniformity in photoelectric conversion efficiency. In order to solve the problem, the present invention provides a method for manufacturing a photoelectric conversion element, the method including: a step (A) in which a photoelectric conversion layer that includes a crystal having a perovskite structure is formed using a large-area film formation method; and a step (B) in which a charge transport layer is formed by applying a coating material for a charge transport layer onto the surface of the photoelectric conversion layer and subsequently drying the coating material. This method for manufacturing a photoelectric conversion element is characterized in that the coating material for a charge transport layer contains charge transport particles and an insulating resin.

The present invention addresses the problem of providing a photoelectric conversion element that exhibits enhanced durability. In order to solve the problem, the present invention provides a photoelectric conversion element comprising a first electrode, a second electrode, and a photoelectric conversion layer which is disposed between the first electrode and the second electrode and includes perovskite-structure crystals. The photoelectric conversion element is characterized by having a charge transfer layer between the photoelectric conversion layer and the first electrode, and is characterized in that: the charge transfer layer contains a charge transfer substance and an insulating resin which are phase-separated; the ratio of the volume of the region of the charge transfer substance with respect to the volume of the region of the insulating resin is 5-30; and in a binary image of a two-dimensional spatial distribution of a region A and a region B, which is obtained by measuring the charge transfer layer with an optical microscope, when a value which is obtained by subjecting the binary image to Fourier analysis and is acquired by a calculation method for D is defined as D [μm], said D [μm] satisfies 4≤D≤12.

This invention discloses a superlattice multiplication layer avalanche diode and its fabrication method. The single-photon avalanche diode includes a graphene transparent electrode and, from bottom to top, an InP substrate, an n-type buffer layer, a superlattice absorption region, a p-type charge layer, a superlattice gradient region, a superlattice multiplication region, a p-type contact layer with a p-type contact window, and a passivation layer. The graphene transparent electrode is grown on the passivation layer and the p-type contact window, forming an ohmic contact with the p-type contact region. Magnetic metal nanoparticles that generate a local magnetic field are embedded in the superlattice multiplication region. The magnetic metal nanoparticles are uniformly distributed in-plane within a depth range of 5-400 nm from the interface in the light-gathering direction of the superlattice multiplication region. This invention combines the internal bandgap optimization of the superlattice with the external limiting pump capability of graphene to produce a synergistic effect, providing a single-photon avalanche diode with low dark count rate, weak afterpulse effect, high detection efficiency, and the ability to operate at relatively high temperatures.

A semiconductor device includes a substrate, a gate stack structure, and a channel structure. The gate stack structure includes a plurality of interlayer insulating layers and a plurality of gate electrodes alternately stacked on the substrate. The channel structure at least partially penetrates the gate stack structure and extends in one direction. The channel structure includes: a channel layer coupled to the substrate; a ferroelectric layer at least partially surrounding the channel layer and including a ferroelectric material; and a charge-bound layer at least partially surrounding the ferroelectric material and including an insulating material. At least one of a conduction band level or a valence band level of the insulating material is disposed between a conduction band level and a valence band level of the ferroelectric material.

The invention discloses a low-noise near-infrared single-photon avalanche detector and a preparation method thereof, the low-noise near-infrared single-photon avalanche detector comprises an n-type InP substrate, and an InP buffer layer, a GaAs < 0.51 > Sb < 0.49 > absorption layer, an In Ga < 1-a > As Sb < 1-b > energy band gradient layer, a composite charge layer containing an indium quantum dot array, an InP avalanche layer and an i-InP diffusion layer which grow on the front surface of the n-type InP substrate from bottom to top in sequence, the composite charge layer containing the indium quantum dot array comprises an InP gradient charge layer, an In quantum dot deposition layer and an InP constant charge thin layer which are sequentially grown from bottom to top. On the premise of keeping high photon detection efficiency of the detector, the dark counting rate and the post-pulse probability of the detector can be effectively reduced, and the performance and the reliability of the detector are remarkably improved.

The invention discloses a single-photon avalanche detector with high detection efficiency and a preparation method of the single-photon avalanche detector. The single-photon avalanche detector comprises a semi-insulating substrate, an n + InGaAs substrate epitaxial layer, an n + InAlAs substrate epitaxial layer, an i: InAlAs epitaxial multiplication layer, a p + InAlAs charge layer, an InAlAs / InAlGaAs superlattice gradient layer, an InAlGaAs / InGaAs superlattice absorption layer, a p +: InAlAs epitaxial layer and a p +: InP epitaxial layer which are sequentially arranged from bottom to top, the InAlAs / InAlGaAs superlattice gradient layer is arranged in a periodic cycle mode, and the InAlGaAs / InGaAs superlattice absorption layer is arranged in a periodic cycle mode. Compared with the prior art, the quantum efficiency of the device can be improved, the width of a depletion region can be increased, the electric field of the absorption layer is reduced, and the carrier collection efficiency is improved.

The embodiment of the invention provides a photonic device, a photonic device structure and a forming method thereof. The photonic device includes a substrate, a P-type doping component disposed over the substrate, an N-type doping component disposed over the substrate, an optical absorption layer disposed over the substrate, and a charging layer disposed over the substrate. The optical absorption layer is located between the P-type doped component and the N-type doped component. The optical absorbing layer and the substrate have different material compositions. The charging layer is located between the P-type doped component and the N-type doped component. The charging layer has a substantially linear first side surface. The first side surface is in direct contact with the optical absorbing layer.

The application belongs to the technical field of semiconductor process, and discloses an indium arsenide quantum dot single-photon avalanche diode and a manufacturing method thereof, which comprises a substrate layer, a buffer layer, an N-type indium phosphide doped layer, an intrinsic indium gallium arsenide absorption layer, an N-type indium gallium arsenide phosphorus light-doped gradient layer, an N-type indium phosphide light-doped charge layer, an intrinsic indium arsenide quantum dot avalanche layer and a P-type indium phosphide light-doped contact layer which are sequentially stacked; the quantum dot size of the intrinsic indium arsenide quantum dot avalanche layer ranges from 2 nm to 10 nm. The application can reduce excessive noise, improve the bandwidth of a device and improve the response speed of a diode.

The utility model discloses a single photon avalanche diode structure integrated with an active quenching device, and belongs to the technical field of semiconductor photoelectrons. The structure comprises an InP substrate, an InP buffer layer, an InGaAs absorption layer, an InGaAsP gradient layer, an InP charge layer integrated with an active quenching device, an InP cap layer, a SiN dielectric layer, an N electrode and a P electrode. The device is a positive irradiation single photon avalanche diode. Wherein the InP cap layer is integrated with a metal-insulator-semiconductor field effect transistor (MISFET), and the drain electrode of the field effect transistor and the P electrode of the InGaAs / InP single photon avalanche diode share a diffusion region. According to the utility model, the passive quenching and active recovery functions of the single photon avalanche diode are realized, and an active quenching device is integrated on the InP cap layer, so that parasitic parameters introduced in a circuit connection process are reduced, and therefore, avalanche charges of the avalanche diode can be reduced, and post-pulses can be suppressed. And the integration mode can be based on a manufacturing process of a standard single photon avalanche diode, and integration can be realized by only adding a photoetching step.

The application relates to the technical field of photoelectric detection, and provides an avalanche multiplication photoelectric detector and a preparation method, the detector comprising a super surface structure, a second doped layer, a first doped layer, a multiplication layer, a charge layer, an absorption layer and a dielectric super surface layer which are arranged in sequence, the super surface structure is arranged on the dielectric super surface layer or arranged on the side surface of the dielectric super surface layer and the absorption layer close to the dielectric super surface layer, and the super surface structure penetrates along the thickness direction of the dielectric super surface layer; the second doped layer is formed in the absorption layer and located on the side of the absorption layer close to the super surface structure. The avalanche multiplication photoelectric detector provided by the application realizes the regulation and control of the phase, amplitude and polarization of the incident light field by integrating the super surface structure on the incident side of the absorption layer, so that the absorption rate of the detector is improved without increasing the thickness of the absorption layer, and the gain of the detector is improved, the device bandwidth is effectively expanded, the time jitter is reduced, and the noise is suppressed.

The invention relates to the technical field of photodiodes, and relates to a photodiode and a preparation method thereof, an active region structure and electronic equipment, so as to obtain a high-quality InyGa1-yAs absorption layer. The photodiode comprises an N-type contact layer, an active region structure and a P-type contact layer which are sequentially stacked, the active region structure comprises a multiplication structure layer, a charge layer, a transition layer and an absorption layer which are sequentially stacked, the absorption layer is an InyGa1-yAs layer, the transition layer comprises N InxGa1-xAs buffer layers, N is a positive integer larger than 1, x is larger than 0 and smaller than 1, and x is larger than 0 and smaller than 1 in the direction from the charge layer to the absorption layer. The content of the In component in the N-layer InxGa1-xAs buffer layer is gradually increased, and the absolute value of the difference between the surface, facing the absorption layer, of the transition layer and the content of the In component in the absorption layer is smaller than or equal to 0.2, so that the InyGa1-yAs absorption layer with higher quality can be obtained, and effective absorption of long-wavelength light is realized.

The invention discloses a middle and far infrared single photon avalanche photodiode structure and a preparation method thereof. The middle and far infrared single photon avalanche photodiode structure comprises a Si substrate; the Ge buffer layer, the GaAs buffer layer and the InP buffer layer are sequentially arranged on the Si substrate; the n + InP contact layer is arranged on the buffer layer; the i-InP avalanche layer is arranged on the n + InP contact layer; the p-InP charge layer is arranged on the avalanche layer; the i-high Sn content GeSn absorption layer is arranged on the charge layer; and the p + GeSn contact layer is arranged on the absorption layer. According to the GeSn SPAD device, the InP material matched with the crystal lattice of the GeSn absorption region with the high Sn content is adopted as the avalanche region, the crystal lattice mismatch between the avalanche region and the absorption region in the GeSn SPAD device is reduced, and the cut-off wavelength of the GeSn SPAD device can be expanded to the middle and far infrared band.

The invention discloses a self-driven composite marine antifouling coating and a preparation method thereof. The self-driven composite marine antifouling coating comprises a base material, a copper electrode plate and an antifouling coating from bottom to top in sequence, the base material and the copper electrode plate form a friction nano generator; the base material is a glass base material. The preparation method comprises the following steps: respectively preparing the antifouling coating, the glass substrate and the copper electrode plate, and then sequentially adhering together; the invention has the advantages of good dispersibility and better heat-conducting property. According to the invention, the friction nano-generator is formed by the glass substrate and the copper electrode plate, the anti-fouling coating prepared in a matched manner is combined, wave energy near a waterline is collected through the friction nano-generator, and a stable double-charge layer at a contact interface of the coating and water is interfered by a variable electric field formed around the underwater electrode wire; therefore, the formation of a biological membrane in an initial stage is inhibited, and the purpose of effectively hindering the formation of biological pollution is achieved; the antifouling paint has the advantages of being good in antifouling performance and free of environmental pollution.

The application belongs to the technical field of lithium ion battery electrode materials, and discloses a method for in-situ coating of magnesium borate on a lithium ion battery positive electrode material. By adjusting the feeding ratio of a magnesium source and a boron source, and by using the positive charge layer on the surface of the lithium ion battery positive electrode material, the borohydride groups with negative charges dispersed in the solution, and the magnesium ion groups with positive charges, a positive-negative-positive charge distribution layer is constructed. Then, through a hydrolysis reaction, a uniform and complete amorphous magnesium borate coating is in-situ coated on the surface of the positive electrode material, a series of in-situ coating of magnesium borate (Mg2B2O5, Mg3B2O6, MgB4O7) is realized, and a lithium ion battery positive electrode material with good interface stability in air and electrolyte is prepared. The method provided by the application has remarkable effects, simple and efficient steps, low cost, and is easy to realize industrialized preparation.