139 results about "Radical oxidation" patented technology

Methods for forming a tunnel oxide structure device and methods for forming the structure are described. A structure comprising nitrogen is formed on a semiconductor substrate. The structure is oxidized. Nitrogen of the oxide structure is redistributed to form a region of concentrated nitrogen. Oxidizing the structure and redistributing the nitrogen is performed via radical oxidation. Nitrogen is added to the oxide structure. The region of concentrated nitrogen helps to regulate the depth of the added nitrogen.

A method for manufacturing a non-volatile memory device having a charge trap layer comprises in one embodiment: forming a first dielectric layer over a semiconductor substrate; forming a second dielectric layer having a higher dielectric constant than that of the first dielectric layer over the first dielectric layer; forming a nitride buffer layer for preventing an interfacial reaction over the second dielectric layer; forming a third dielectric layer by supplying a radical oxidation source onto the nitride buffer layer to oxidize the nitride buffer layer, thereby forming a tunneling layer comprising the first, second, and third dielectric layers; and forming a charge trap layer, a shielding layer, and a control gate electrode layer over the tunneling layer.

Reading margin is improved in a MTJ designed for MRAM applications by employing a pinned layer with an AP2/Ru/AP1 configuration wherein the AP1 layer is a CoFeB/CoFe composite and by forming a MgO tunnel barrier adjacent to the CoFe AP1 layer by a sequence that involves depositing and oxidizing a first Mg layer with a radical oxidation (ROX) process, depositing and oxidizing a second Mg layer with a ROX method, and depositing a third Mg layer on the oxidized second Mg layer. The third Mg layer becomes oxidized during a subsequent anneal. MTJ performance may be further improved by selecting a composite free layer having a Fe/NiFeHf or CoFe/Fe/NiFeHf configuration where the NiFeHf layer adjoins a capping layer in a bottom spin valve configuration. As a result, read margin is optimized simultaneously with improved MR ratio, a reduction in bit line switching current, and a lower number of shorted bits.

Provided herein is a placental membrane product comprising an immunocompatible amniotic membrane. Such placental membrane products can be cryopreserved and contain therapeutic factors and viable cells after thawing. The placental membrane products are useful in wound healing and tissue repair/regeneration as they are capable of promoting angiogenesis, reducing inflammation, inhibiting proteases and free radical oxidation, reducing scar formation, and other methods that promote healing. The present technology relates to products to protect injured or damaged tissue, or as a covering to prevent adhesions, to exclude bacteria, to inhibit bacterial activity, and/or to promote healing or growth of tissue. The field also relates to methods of manufacturing and methods of use of such membrane-derived products.

A metal oxide high-k dielectric is deposited on a semiconductor wafer in a manner that reduces dangling bonds in the dielectric without significantly thickening interfacial oxide thickness. A metal oxide precursor and radical oxygen and/or radical nitrogen are co-flowed over the semiconductor wafer to form the high-k dielectric. The radicals bond to dangling bonds of the metal of the metal oxide during the deposition process that is performed at the regular deposition temperature of less than about 400 degrees Celsius. The radical oxygen and radical nitrogen do not require the higher temperatures generally required in an anneal in order to attach to the dangling bonds of the metal. Thus, a high temperature post deposition anneal, which tends to cause interfacial oxide growth, is not required. The dielectric is of higher quality than is typical because the dangling bonds are removed during deposition rather than after the dielectric has been deposited.

The present invention is generally directed towards a method for removing hydrocarbon contamination from a substrate prior to a nitridation step, therein providing for a generally uniform nitridation of the substrate. The method comprises placing the substrate in a process chamber and flowing an oxygen-source gas into the process chamber. A first plasma is formed in the process chamber for a first predetermined amount of time, wherein the hydrocarbons combine with one or more species of the oxygen-source gas in radical form to form product gases. The gases are removed from the process chamber and a nitrogen-source gas is flowed into the process chamber. A second plasma is then formed in the process chamber for a second predetermined amount of time, therein nitriding the substrate in a significantly uniform manner.

An apparatus for cleaning the specimen and interior specimen chamber of Transmission Electron Microscopes, and similar electron- or charged-particle-beam instruments consisting of a plasma cleaning device mounted on a hollow rod that replaces the stage through the air lock of the instrument by being the same shape and size as the stage support rod. The plasma cleaning device is a small hollow cathode that is excited by RF power. Air or other oxygen containing mixtures is admitted to the plasma through the hollow rod at a pressure below 1 Torr. The plasma creates oxygen radicals from the oxygen containing gas. The oxygen radicals oxidize the hydrocarbons contamination and convert them to easily pumped gases. The apparatus can be attached to the electron microscope whenever cleaning is needed, and then is easily removed to return the instrument to its analytical function.

A method of manufacturing a stacked film includes; subjecting a semiconductor substrate to a radical oxidation reaction to form a radical oxide layer on a surface of the semiconductor substrate, annealing the radical oxide layer in a hydrogen atmosphere to convert the radical oxide layer to a first passivation layer, and disposing a second passivation layer on the first passivation layer.

The present invention relates to a tea-polyphenol soft capsule including capsule core and capsule shell, its capsule core contains (wt%) 5-60% of tea-polyphenol, 0-20% of soya bean lecithin, 0-2% of vitamin E, 0-15% of stabilizing agent and the rest is diluting agent. Its capsule shell composition contains (wt%) 35-45% of gelatin, 0-3% of polyglycol 400, 18-22% of plasticizer, 0.08-0.11% of preservative, 0-1% of covering agent, 0-0.35% of coloring matter, 0-0.1% of corrective and the rest is water. Its preparation process includes preparation of capsule core, preparation of capsule shell and pressing capsule. The capsule has the several actions of reducing blood fat, resisting cancer, resisting free radical oxidation, resisting atheroscleorsis, promoting absorption of VitC and preventing and curing scorbutus.

The invention relates to a method for simultaneous desulfurization denitrification and mercury removal based on hydroxyl and sulphate radical oxidation. According to the method, ultraviolet radiation is adopted to decompose peroxide to produce hydroxyl and sulphate radical with strong oxidizing property, which serves as an oxidizing agent, and oxidation is performed in an impact bed, so as remove SO2, NOx and Hg0 in flue gas. The flue gas from an emission source is mixed with peroxide solution and then is sprayed into the impact bed at a high speed through coaxially and oppositely distributed nozzles, and two atomized gas-liquid mixtures are oppositely impacted and mixed in the impact bed. Ultraviolet radiation decomposes the peroxide in the solution to produce hydroxyl and sulphate radical to oxidize and remove the SO2, NOx and Hg0; divalent mercury produced during reaction enters a mercury separation tower, so as to be separated and recycled; sulfuric acid and nitric acid solution enter an absorption tower to produce ammonium sulfate and ammonium nitrate solution; the ammonium sulfate and ammonium nitrate solution finally enter an evaporation crystallization tower to produce solid ammonium sulfate and ammonium nitrate solution. A system can realizes complete removal of the SO2, NOx and Hg0, no secondary pollution exists during removal, and the method has a wide market application prospect.

Disclosed herein is a semiconductor device including: a semiconductor substrate; a gate insulating film formed on surfaces of the semiconductor substrate including an internal surface of a hole formed in the semiconductor substrate and formed by radical oxidation or plasma oxidation; and a gate electrode formed as buried in the hole. The gate insulating film and the gate electrode form a vertical MOS.

The present invention relates to an anti-free radical oxidation, liver-protective, senile dementia preventing and anti-aging active dehydrogenation silybin double-ester derivative and the related medicinal salt or solvent compound. The invention also relates to the preparation method for the compound on the formula 1, as well as the related medication compounds and the curatorial uses. The compound of the invention can protect the liver cells of a rat liver cell injury in vitro model, which can be expected to prevent liver damage in drug use; the compound of the invention is provided with the biological activities of in vitro removing superoxide anion free radicals and diphenyl-benzyl-hydrazine free radicals, and restraining generation of grease peroxide induced by free radicals. The compound can strongly confront the PC12 cells damage caused by free radicals, which can be expected to prevent various diseases caused by free radicals in drug use.

The invention relates to a regeneration method and a circulating restoration device for an organic contaminated soil restoration eluate. According to the invention, the theory is as follows: on the basis of free-radical oxidation of sulfate radicals, hydrophobic organic matters in the eluate are selectively and preferably degraded. The method and the device can be used for preferably degrading pollutants in the eluate during the organic contaminated soil eluting restoration process, so that the eluate can be regenerated and recycled, and the defects of a traditional leaching process can be well solved; the regeneration of the eluate in a hydrophobic organic contaminated soil eluting restoration technology is realized, repeated eluting can be carried out, the regenerative recycling of the eluate in the eluting process is realized, the total water consumption and surfactant consumption for soil eluting can be greatly reduced, the soil restoration cost is lowered, and secondary pollution cannot be caused.

The invention relates to a method for producing sulfate radical free radicals to oxidize pollutants through in-situ electrocatalysis. The method comprises the steps: sulfate in wastewater is activatedin situ by an anode material with high oxygen evolution potential to generate persulfate radicals, the generated persulfate radicals are catalyzed into sulfate radical free radicals at a cathode material with electrocatalytic activity, pollutants in the wastewater are oxidized by the sulfate radical free radicals and the sulfate radical free radicals are converted into sulfate at the same time, the sulfate are activated at the anode material again, and the processes are repeated. Compared with the prior art, the method has the advantages that sulfate ions in the water body are used for generating the sulfate radical free radicals in situ to oxidize and remove the pollutants, oxidants (such as peroxymonosulfate and peroxydisulfate) do not need to be added, and the salt concentration of thewater body cannot be increased; the water pollution control technology is high in removal efficiency and small in secondary pollution, and has the characteristic of easiness in automation.

A method by which generation of leak current can be suppressed and also a fine element can be formed by performing element isolation at a temperature at which a glass substrate can be used is provided. The method includes a first step of forming a base film over a glass substrate; a second step of forming a semiconductor film over the base film; a third step of forming, over the semiconductor film, a film preventing oxidation or nitridation of the semiconductor film into a predetermined pattern; and a fourth step of performing element isolation by radical oxidation or radical nitridation of a region of the semiconductor film, which is not covered with the predetermined pattern, at a temperature of the glass substrate lower than a strain point thereof by 100° C. or more, where radical oxidation or radical nitridation is performed over a semiconductor film placed apart from a plasma generation region, in a plasma treatment chamber with an electron temperature within the range of 0.5 to 1.5 eV, preferably less than or equal to 1.0 eV, and an electron density within the range of 1×10¹¹cm⁻³ to 1×10¹³cm⁻³.

The invention discloses a chalcone derivative with good anti-free radical oxidative damage activity. The structural formula of the chalcone derivative is shown as the following. The preparation method of the chalcone derivative includes: letting syringaldehyde and para-substituted acetophenone react in piperidine and under a high temperature so as to generate corresponding substituted chalcone; reacting purified chalcone with sodium borohydride under a cerous chloride heptahydrate condition to generate a chalcone derivative crude product, and then conducting purification. , Compared with ascorbic acid, the product provided by the invention has low anti-DPPH free radical and anti-ABTS<+> free radical IC50 value, and strong free radical scavenging ability, thus having broad application prospects in preparing drugs for treating neurodegenerative diseases. (formula I).

The present invention discloses one industrial method of oxidizing four-valent sulfide with non-thermal plasma in the co-existence of OH, H, O, N and other high chemical activity free radicals. High voltage power source is applied to the discharge system of streamer discharge plasma reactor to form the streamer discharge plasma reaction area while sulfite solution is fed into the reaction area, and the four-valent sulfur is oxidized into six-valent sulfur during the streamer discharge oxidizing process. Meanwhile, atomizing mode, bubbling mode or high specific surface area electrode is used to increase the gas-liquid mass transfer interface and raise the mass transfer efficiency. Compared with conventional method, the present invention has high oxidization rate, low power consumption, short processing time, small covered area, less ammonia leakage and other advantages.

The invention provides an acanthopanan trifoliatus extract, and a preparation method and an application thereof. According to the invention, acanthopanan trifoliatus entire plant is weighed and is soaked by using ethanol; rotary evaporation concentration is carried out, and a water solution is obtained; the water solution is sequentially extracted by using petroleum ether, ethyl acetate, and n-butanol; and an obtained extraction liquid is subjected to reduced-pressure distillation, such that a paste is obtained, wherein the paste comprises petroleum ether extract, ethyl acetate extract, n-butanol extract, and water-soluble matter. Through a free radical oxidation resistance experiment, a macrophage growth experiment, a NF-kB nuclear transcription factor inhibition experiment, and an Erk1/2 activation effect experiment, it is verified that the acanthopanan trifoliatus extract has anti-oxidative and anti-inflammatory capacities. Inflammatory-treating medicines or anti-oxidative cosmetics or foodstuff compositions with added acanthopanan trifoliatus and extracts thereof are provided with anti-inflammatory and anti-oxidative effects. The acanthopanan trifoliatus extract can be used in inflammation-controlling or aging-controlling cosmetics, medicines, vegetable beverages and health-care foodstuffs.

The invention discloses a side chain type imidazolyl benzdine and a preparation method thereof. The preparation method comprises the following steps of: utilizing 3, 3'-dihydroxydiphenylamine as a raw material, carrying out three reaction steps of etherification grafting, acidification hydrolyzing and condensation cyclizing, and thus obtaining the side chain type imidazolyl benzdine. An imidazole group of a diamine monomer is grafted with a side chain which is far from a main chain, so that the performance of a polymer can be effectively improved, and particularly, the anti-radical oxidation stability and hydrolytic stability of sulfonated polyimide are improved. The side chain type imidazolyl benzdine can also be served as the raw material for synthesizing polymers such as polyimide, polyamide, polyurethane, polyether amine and the like, and has a wide application prospect on the aspects of high-performance fibers and fuel cells.

Embodiments described herein generally relate to flash memory devices and methods for manufacturing flash memory devices. In one embodiment, a method for selective removal of nitrogen from the nitrided areas of a substrate is provided. The method comprises positioning a substrate comprising a material layer disposed adjacent to an oxide containing layer in a processing chamber, exposing the substrate to a nitridation process to incorporate nitrogen onto the material layer and the exposed areas of the oxide containing layer, and exposing the nitrided material layer and the nitrided areas of the oxide containing layer to a gas mixture comprising a quantity of a hydrogen containing gas and a quantity of an oxygen containing gas to selectively remove nitrogen from the nitrided areas of the oxide containing layer relative to the nitrided material layer using a radical oxidation process.

The invention discloses a method for preparing ramie fiber by using a 2,2,6,6-tetramethylpiperidine-1-oxide radical oxidation (TEMPO) system. The method is characterized by comprising the following steps: preparing oxidized degumming liquid from a degumming aid and a reagent of the 2,2,6,6-tetramethylpiperidine-1-oxide radical oxidation system, adding the original ramie, and soaking at room temperature; adding ethanol into the degumming liquid to terminate oxidation reaction; adding sodium hydroxide into the degumming liquid, heating, and preserving heat after heating to 100 DEG C; taking out fiber in the degumming liquid, performing treatment by using a reducing agent, applying oil and drying to obtain the ramie fiber. The ramie is oxidized and degummed by the TEMPO system, so that the technical effects of shortening the degumming time, reducing the degumming energy consumption and reducing the COD value of degumming waste water are achieved.

According to the present invention, gas in which oxygen gas and krypton are mixed is introduced into a process vessel from a process gas supply source while a processing target made of an aluminum alloy in the process chamber is kept at a predetermined temperature, and plasma is generated in the process vessel by a microwave. Radical oxidation processing by an oxygen radical generated thereby is applied to a surface of the processing target, so that a dense oxide coating film with improved corrosion resistance is formed on the surface of the processing target.