30 results about "Electron temperature" patented technology

The invention provides a method for analyzing femtosecond laser-induced damage behaviors on the surface of a Zn-doped KDP crystal, and belongs to the technical field of engineering optics based on computer data processing. The method comprises the following steps: firstly, respectively analyzing the influence of the Zn doping amount on the band gap and electroacoustic coupling of the KDP crystal through an ultraviolet-visible absorption spectrum and a Brillouin light scattering spectrum; then constructing a one-dimensional model, respectively simulating the electron density, lattice temperature and time evolution of electron temperature on the surface of the Zn-doped KDP crystal under femtosecond laser irradiation through an electron density accumulation rate equation and a double-temperature model, and theoretically analyzing the influence of the Zn doping amount on the damage behavior of the surface of the KDP crystal. And a theoretical model for calculating the femtosecond laser induced damage threshold is established, so that the optimal doping amount of Zn is determined in a lossless manner. A real sample is not contacted, so that the sample utilization rate is improved; the simulation process is more stable and controllable, and the data repeatability is high; and the research period can be shortened, and optimal doping amount screening is accelerated.

The invention discloses a multi-physical field coupling simulation method for a femtosecond laser ablation diamond packaging substrate, and relates to the technical field of ultrafast laser processing and semiconductor packaging. According to the method, a dual-temperature model considering multi-photon absorption, avalanche ionization, transient optical property change and electron-lattice energy transfer is constructed, and the ultrafast nonlinear process of interaction between femtosecond laser and diamond is simulated. On the basis of a finite element method, a Fokker-Planck equation and a double-temperature equation which are coupled are solved, evolution of free electron density, reflectivity, an absorption coefficient and electron temperature and lattice temperature is calculated in real time, and a free electron density threshold value serves as an ablation criterion to predict ablation morphology. According to the method, the mechanism of femtosecond laser ablation of the diamond can be accurately revealed, process parameters are optimized, the experiment trial and error cost is reduced, and theoretical guidance and a simulation tool are provided for high-precision and low-damage machining of the diamond packaging substrate.

The application provides a method for analyzing a 4H-SiC femtosecond laser processing optimal energy interval, and belongs to the technical field of engineering optics based on computer data processing. First, the evolution of electron density, lattice temperature and electron temperature under irradiation is simulated by constructing a three-dimensional model and an electron density cumulative rate equation and a double-temperature model, so that the lattice modification threshold and the ablation threshold are determined. Then, a plurality of experimental data points are selected in the interval for single-pulse laser processing, the surface morphology, removal depth and removal radius of each data point are counted by using conventional characterization methods, and the accuracy and non-thermal removal threshold of the model are determined by observing the number of surface spatter particles and the flux calculation of the morphology edge. Further, the optimal structure modification energy interval, cold processing interval and hot ablation processing interval of 4H-SiC are determined. The application uses fewer sample damage test times, improves the sample utilization rate, shortens the research period, and accelerates the flux screening of the optimal laser processing.

The application provides a kind of management and control chemical fast LIBS classification identification model construction method, medium and system, belongs to management and control chemical technical field, the application is by collecting mercury argon reference lamp spectrum to carry out wavelength calibration, according to atomic spectrum database extraction management and control element characteristic transition wavelength window and compressed to low-dimensional feature space by sparse self-encoder, with hydrogen line starker broadening and Boltzmann graph slope method real-time inversion electron density and electron temperature and to compressed characteristic matrix is physically normalized, calculates plasma drift index to adaptively adjust plasma parameter decoupling double-flow condition graph network update strategy, the normalized characteristic matrix and physical diagnostic value are input into the artificial intelligence network to output element concentration vector and class prediction probability, solve the technical problems that plasma parameter fluctuation leads to laser-induced breakdown spectroscopy classification feature instability, classification accuracy significantly decreases under the condition of cross-instrument and cross-matrix.

The application discloses a method for inhibiting thermionic emission based on TTM-MD simulation, which adjusts the energy distribution and delay time of double pulses to regulate the electron temperature, and obtains the maximum delay time introduced under the condition of meeting the processing requirements according to the relationship between the temperature rising time and the delay. The method can obtain the maximum delay introduced under the condition of meeting the processing requirements, reduces the electron temperature, and inhibits the thermionic emission.

This invention provides a method for analyzing the femtosecond laser-induced damage behavior of Zn-doped KDP crystal surfaces, belonging to the field of engineering optics technology based on computer data processing. First, the effects of Zn doping concentration on the bandgap and electroacoustic coupling of the KDP crystal are analyzed using UV-Vis absorption spectroscopy and Brillouin scattering spectroscopy, respectively. Then, a one-dimensional model is constructed, and the time evolution of electron density, lattice temperature, and electron temperature on the Zn-doped KDP crystal surface under femtosecond laser irradiation is simulated using a rate equation for electron density accumulation and a two-temperature model. The influence of Zn doping concentration on the damage behavior of the KDP crystal surface is theoretically analyzed, and a theoretical model for calculating the femtosecond laser-induced damage threshold is established, thus non-destructively determining the optimal Zn doping concentration. This invention avoids contact with real samples, improving sample utilization; the simulation process is more stable and controllable with high data repeatability; it can also shorten the research cycle and accelerate the selection of the optimal doping concentration.

The application discloses a plasma electron temperature two-dimensional distribution multi-time point diagnosis method and device based on an X-ray waveband sheet array, equipment and a medium, and comprises the following steps: acquiring two X-ray coded images under the same time signal; reconstructing the X-ray coded images through a coded image reconstruction algorithm to obtain a high-resolution X-ray intensity image corresponding to each X-ray coded image; constructing a corresponding relationship between the intensity ratio and the electron temperature of the two high-resolution X-ray intensity images at the same position based on the working principle of a multi-channel filter sheet method; determining the electron temperature two-dimensional distribution information at the time point according to a plurality of corresponding relationships, and expanding the electron temperature two-dimensional distribution multi-time point data. The application belongs to the field of plasma electron temperature diagnosis. The application can improve the light collection efficiency and the spatial resolution.

The application relates to the technical field of atomic spectrum detection, in particular to an FL-LIBS calibration-free method and device based on non-gated acquisition, equipment and a medium. The method comprises the following steps: obtaining a corrected spectrum and determining a target reference element; obtaining a plurality of candidate vectors and determining candidate simulation spectra; iteratively updating each candidate vector; determining a target simulation spectrum and an optimal vector; determining a target electron temperature and a target particle number density; determining the particle number densities of other elements in the sample to be measured according to the target electron temperature; and performing normalization calculation on the target particle number density and the particle number densities of the other elements to obtain the concentration composition of the sample to be measured. The application generates a plurality of unknown parameter groups, i.e. candidate vectors, and finds the optimal vector that best matches by means of an optimization algorithm, thereby providing a method for obtaining the electron temperature required for time-integrated spectrum in the case of being free from a high-speed gated detector, and realizing fast and accurate calibration-free quantitative analysis of FL-LIBS.

The present application provides a method and system for inferring an electron temperature from a hollow cathode plume color, applicable to diagnosis and inference of the electron temperature distribution of the hollow cathode under in-orbit or other vacuum environments. The method includes extraction of plume color data of the hollow cathode, two-dimensional processing of the plume color data, establishment of a correlation database between gridded colors and electron temperatures, and inference of the electron temperature distribution using the gridded colors. The inferred data of the electron temperature obtained in the present application exhibits trends consistent with measurement data obtained using a Langmuir probe, with diagnostic deviations within 30%. Based on the present application, researchers can directly leverage hollow cathode plume images to perform rapid, non-contact diagnosis of the electron temperature distribution characteristics.

This invention proposes a fast measurement method for the global average non-extensive parameter of a Hall thruster plasma. The method includes steps S1 (steady-state operation of the equipment), S2 (collecting cathode-side electron temperature, anode-side electron temperature, and discharge voltage), and S3 (calculating the global average non-extensive parameter Q). The analytical formula is: [Formula omitted for brevity]. This method abandons traditional distribution function fitting methods and directly analyzes the global average non-extensive parameter Q within the discharge channel by measuring relevant physical quantities of the anode and cathode. The analytical formula is concise and the calculation is fast, enabling on-orbit online real-time monitoring and parameter calculation. The entire process utilizes the existing temperature and pressure measurement circuits of the equipment without adding new hardware, achieving global, real-time, and low-cost measurement. It is suitable for strong non-equilibrium plasma conditions such as Hall thrusters, and the calculated non-extensive parameter can be applied to thrust modeling and operational condition monitoring.

The process for producing a diamond thin film comprises synthesizing a diamond thin film on a base material by a plasma-CVD process, wherein a starting gas containing C, H, and O is introduced into a vacuum vessel in which the base material is arranged, radio frequency current is applied to an antenna located inside or outside the vacuum vessel, which has a conductor element and a capacitive element electrically connected in series to generate an inductively coupled plasma inside the vacuum vessel, and the generated inductively coupled plasma is used for the plasma-CVD process. When the diamond thin film is synthesized, the plasma has the following properties: the electron temperature is 1.0 eV or higher and 2.0 eV or lower; the electron density is 1.0 × 10⁻⁶ 11 cm -3 or more and 1.0 × 10 12 cm -3or less; and the ion saturation current is 1.0 × 10 -4 A or more and 1.0 × 10 -2 A or less.

The present application relates to the technical field of coal quality industrial analysis, and provides a coal quality industrial analysis method based on laser-induced breakdown spectroscopy characteristic peak selection set, comprising the following steps: data acquisition, using laser-induced breakdown experiment to collect coal sample spectrum data; data preprocessing, sequentially completing spectrum continuous radiation removal, local maximum value peak searching, characteristic peak selection, spectrum peak value fitting, and solving electron density and plasma electron temperature; quantitative analysis, taking standard coal sample test results as a training set, and using partial least square regression method to realize quantitative calculation of coal quality industrial analysis components of the sample; the present application can realize coal quality industrial quantitative analysis based on laser-induced breakdown spectroscopy, is suitable for the characteristic peak set of coal quality industrial analysis, and the integrated application of the method can achieve fitting degrees of sample ash content, volatile matter and fixed carbon all above 0.85.

This invention provides a method for obtaining a laser damage threshold, comprising constructing a model for obtaining the laser damage threshold. The model includes an instantaneous damage model and a thermal accumulation damage model. The instantaneous damage model represents the volumetric heat source distribution, electron temperature change, lattice temperature change, and stress transmission after a single-pulse laser irradiates a sample material. The thermal accumulation damage model represents the volumetric heat source distribution, electron temperature change, and lattice temperature change influenced by the environment after multi-pulse laser irradiates the sample material. The method obtains the physical property parameters of the test material and the laser source parameters. Based on the physical property parameters of the test material, the laser source parameters, and the model for obtaining the laser damage threshold, the laser damage threshold is obtained. This method eliminates the time and material cost associated with numerous destructive experiments, reducing costs while improving the detection efficiency of the laser damage threshold. This invention also provides a photoacoustic measurement device.

The application relates to an arc reignition determination method and device, computer equipment and a storage medium. After a vacuum circuit breaker cuts off a circuit of a power system, a target space-time coordinate point of the vacuum circuit breaker is acquired; the target space-time coordinate point comprises a time coordinate and a space coordinate, the time coordinate corresponds to different time points in an arc-after medium recovery process, and the space coordinate corresponds to different positions in a vacuum circuit breaker electrode gap; the target space-time coordinate point is input into a target simulation model to obtain a target simulation physical quantity; the target simulation physical quantity comprises at least one of electric potential, electron number density, ion number density and electron temperature; and then, according to the target simulation physical quantity, a reignition evaluation result of the arc is determined. According to the above scheme, the target simulation physical quantity can be quickly obtained by inputting the target space-time coordinate point into the target simulation model, a large number of particles do not need to be simulated, and therefore, the simulation efficiency is improved.

The application provides an on-orbit thrust adjusting device and method for a Hall thruster based on a channel wall temperature, belongs to the technical field of aerospace plasma propulsion, and is characterized in that the channel wall temperature adjusting device is built for the Hall thruster under ground and on-orbit conditions. In the ground experiment stage, the parameters of different working conditions are adjusted, the wall temperature of the outer wall of the Hall thruster channel, the electron temperature and the electron density of the plume area are obtained, and a mapping database is established. In the on-orbit experiment stage, when the satellite-borne Hall thruster runs stably, the wall temperature of the outer wall of the satellite-borne Hall thruster channel, the electron temperature and the electron density of the plume area are obtained under different working conditions. The on-orbit adjustment of the thrust is carried out by changing the voltage, the excitation current and the airflow of the satellite-borne Hall thruster. The thrust is verified by combining the electron temperature and the electron density, so that the accuracy of the thrust is ensured.

The application provides a limiter heat flow measurement method under EAST long pulse low parameter discharge, and belongs to the technical field of thermal load diagnosis of controlled nuclear fusion device, and comprises the following steps: obtaining measured heat flux data; setting electron temperature; obtaining heat flow decay length; realizing magnetic line tracing according to a three-dimensional model of the limiter and the first wall component and an experimental magnetic field file to obtain tracing results; obtaining magnetic connection results; setting heat flow decay width and heat flow value at the middle plane 2350 mm to simulate parallel heat flow distribution on the limiter surface; adjusting the maximum / minimum heat flow decay width to make the simulated heat flux trend consistent with the measured heat flux data; adjusting the boundary electron temperature at the middle plane 2350 mm to make the heat flow integral value of each column of tungsten blocks match the measured heat flux data; and outputting a three-dimensional heat flow distribution diagram of the limiter surface to realize the consistency of simulation and measurement. The application can obtain stable and reliable limiter heat flow spatial distribution results under low parameter working conditions.

The invention relates to an arc reignition determination method and device, computer equipment and a storage medium, and the method comprises the steps: obtaining a target space-time coordinate point of a vacuum circuit breaker after the vacuum circuit breaker cuts off a circuit of a power system; wherein the target space-time coordinate points comprise time coordinates and space coordinates, the time coordinates correspond to different moments in the post-arc medium recovery process, and the space coordinates correspond to different positions in the electrode gap of the vacuum circuit breaker; inputting the target space-time coordinate point into a target simulation model to obtain a target simulation physical quantity; wherein the target simulation physical quantity comprises at least one of potential, electron number density, ion number density and electron temperature; and determining a reignition evaluation result of the arc according to the target simulation physical quantity. According to the scheme, the target time-space coordinate point is input into the target simulation model, so that the target simulation physical quantity can be quickly obtained, and massive particles do not need to be simulated, thereby improving the simulation efficiency.

This invention provides a method and system for inverting electron temperature from the optical color of a hollow cathode plume. It is applicable to the inversion and diagnosis of electron temperature distribution in hollow cathodes under on-orbit or other vacuum environments. The method is based on the extraction of optical color data from the hollow cathode plume, the two-dimensional processing of the plume optical color data, the establishment of a gridded optical color correlation database with electron temperature, and the inversion of electron temperature distribution using the gridded optical color. The electron temperature inversion data of this invention shows a trend consistent with Langmuir probe measurement data, with a diagnostic deviation within 30%. Based on this invention, researchers can directly and rapidly diagnose electron temperature distribution characteristics using hollow cathode plume photographs without physical contact.

The present disclosure provides a method for determining the electron temperature of xenon plasma based on a radiation collision model, comprising: determining the rate equation of atomic energy levels in a steady-state approximation state; determining the dominant particle reaction type in the xenon plasma in a Z-pinch fusion; determining the rate balance equation of the xenon plasma according to the dominant particle reaction type in the xenon plasma and the rate equation of atomic energy levels in the steady-state approximation state; determining the population density ratio of adjacent energy levels; determining the simplified rate balance equation of the xenon plasma according to the population density ratio of adjacent energy levels; determining the spectral line intensity ratio; and determining the electron temperature of the xenon plasma according to the simplified rate balance equation of the xenon plasma, the spectral line intensity ratio, and a preset Boltzmann equation. By the present disclosure, the electron temperature of the xenon plasma under the Z-pinch condition is calculated simply by the relative light intensity line ratio method, the data processing amount is reduced, and the data accuracy is improved.

The invention provides a method for analyzing the optimal energy interval of 4H-SiC femtosecond laser processing, and belongs to the technical field of engineering optics based on computer data processing. The method comprises the following steps: firstly, respectively simulating evolution of electron density, lattice temperature and electron temperature under irradiation by constructing a rate equation of a three-dimensional model and electron density accumulation and a double-temperature model, and determining a lattice modification threshold value and an ablation threshold value; then, a plurality of experimental data points are selected in the interval for single-pulse laser processing, a conventional characterization means is used for counting the surface appearance, the removal depth and the removal radius of each data point, and the accuracy and the non-thermal removal threshold value of the model are calculated and determined by observing the number of splashing particles on the surface and the appearance edge flux. And further determining an optimal structure modification energy interval, a cold processing interval and a thermal ablation processing interval of the 4H-SiC. According to the method, less sample damage test times are used, the sample utilization rate is increased, the research period is shortened, and flux screening of optimal laser processing is accelerated.

The invention relates to a gas arc parameter measurement method and device based on an emission spectrum. The method comprises the following steps: generating a steady-state gas arc in an arcing tank body through an emission spectrum experimental platform, and collecting a self-luminous signal of the steady-state gas arc in a steady-state arcing stage; acquiring a plurality of atomic emission spectral lines and spectral intensity data of a target element in a preset wavelength range according to the self-luminous signal; calculating an electron temperature space distribution value of the gas arc by adopting a Boltzmann diagram method based on the plurality of atomic emission spectral lines and the spectral intensity data; and calculating the electron density of the gas arc by adopting a second-order Stark broadening method based on the plurality of atomic emission spectral lines and the spectral intensity data. By adopting the method, high-precision and repeatable quantitative measurement of gas arc key microscopic parameters (such as electron temperature and electron density) can be realized.

The invention provides a nonlinear multi-field coupling simulation method for femtosecond laser processing of a glass substrate, and relates to the technical field of femtosecond laser micromachining, and the method comprises the following steps: constructing a substrate physical model corresponding to the glass substrate based on material parameters of the glass substrate; constructing a nonlinear ionization model according to the substrate physical model and a coupled multi-photon absorption and avalanche ionization mechanism; constructing a transient optical response model based on a Dyde model and a nonlinear ionization model so as to obtain a change curve corresponding to the free electron density; an electron-lattice heat transfer model is constructed based on the double-temperature equation, and evolution curves of electron temperature and lattice temperature are obtained respectively; according to a preset critical plasma density condition, a simulation ablation morphology corresponding to the substrate physical model is predicted; and comparing the simulated ablation morphology with the experimental ablation morphology to obtain a simulated comparison result, and adjusting femtosecond laser processing parameters according to the simulated comparison result. According to the method, the accuracy of ablation morphology reconstruction is improved.

The invention discloses a thin film plasma internal pressure measuring method and device based on spectral analysis. The method comprises the following steps: placing a to-be-measured optical thin film on a sample table, exciting plasma flash on the surface of the thin film by utilizing energy-adjustable pulse laser, collecting an emission spectrum under the conditions of preset integral time and delay time, selecting two spectral lines of the same element in the spectrum, and calculating the electron temperature through a relative intensity relationship. And calculating the electron density according to the full width at half maximum of the final line and an electron broadening model, and solving the internal pressure of the thin film plasma by adopting a state equation under the hypothesis of local heat balance and quasi-neutral. The device is composed of a laser light source, an attenuation system, a focusing system, a beam splitter, an energy meter, a sample table, a spectrograph and a computer control system. On the basis of the measured internal pressure, the internal pressure of films of different processes can be compared under the same experimental condition, and the method is used for evaluating the laser damage resistance of the film.

The invention discloses a nuclear fusion device edge plasma electron density and temperature diagnosis system and method. Relates to the technical field of spectrum diagnosis. On one hand, the structure of a nuclear fusion device edge plasma electron density and temperature diagnosis system is improved, spatial isolation is achieved between light energy needing to collect a spectrum band and light energy not needing to collect the spectrum band based on a light splitting system comprising an upper layer channel and a lower layer channel, interference of background stray light is reduced, and the detection accuracy is improved; the signal-to-noise ratio can be effectively improved; on the other hand, a nuclear fusion device edge plasma electron density and temperature diagnosis method is improved, the electron density and the electron temperature are measured based on the ratio of four visible spectrums of HeI of a neutral helium atom spectral line, and the spatial resolution of the plasma electron density and the temperature result is improved.

The present application relates to the technical field of electronic temperature diagnosis, and provides a diagnosis method and system for measuring quasi-circular symmetric stellarator electronic temperature, which comprises establishing a correlation between radiation frequency and spatial position, focusing the plasma microwave radiation into a Gaussian beam through a mirror group and focusing it on the core of the plasma, matching a complex three-dimensional magnetic field; determining an effective measurement range by calculation, so that the Gaussian beam accurately covers the range, and improving the resolution by beam focusing; completing diagnosis full-link calibration by using a blackbody source, establishing a quantitative corresponding relationship between the radiation signal intensity and the electronic temperature, and inversely calculating the electronic temperature distribution in multiple dimensions; layering the electronic module into a radio frequency part and an intermediate frequency part, processing the signal through multi-stage filtering and low-noise amplification, matching an adaptive waveguide tube to reduce the loss, and adding a data verification step to ensure the reliability of the measurement data.

The invention discloses a temperature scanning absolute calibration method based on a strong field side electron cyclotron radiometric calibration rate, and relates to the technical field of absolute temperature calibration, and the method comprises the steps: carrying out the relative calibration of an electron cyclotron radiometer at a weak field side through a magnetic field difference calibration method, and obtaining a relative electron temperature distribution structure at the weak field side; on the basis of the obtained signals and the assumed core electron temperature, calculating to obtain relativistic offsets of all diagnosis channels of the electron cyclotron radiometer on the strong field side; a relative electron temperature distribution structure measured by the electron cyclotron radiometer on the strong field side is obtained through relativistic offset on the electron cyclotron radiometer on the strong field side; increasing the electron temperature of the discharge plasma in the magnetic field based on the assumed electron temperature of the core until the electron temperature distribution structures measured on the scanned strong field side and weak field side are consistent, and determining the assumed electron temperature of the core as an absolute temperature; and more accurate and reliable electronic temperature data support is provided for operation and research of the Tokamak device.

The present application relates to the technical fields of magnetic confinement plasma toroidal momentum transport measurement, and discloses an electrostatic probe group for measuring the toroidal momentum transport of magnetic confinement plasma, comprising a graphite shell in the coordinate system of a magnetic confinement fusion device, wherein the top wall of the graphite shell is parallel to the plane, wherein r represents the radial direction, theta represents the polar direction, and phi represents the toroidal direction. A first measuring component is arranged on the top wall of the graphite shell and used for measuring the radial disturbance velocity at the geometric center of the top wall; a second measuring component is used for measuring the electron temperature and electron density at the geometric center; and a third measuring component is used for measuring the toroidal rotation velocity at the geometric center. The first measuring component, the second measuring component and the third measuring component are centrally symmetrically distributed around the geometric center, so that the three plasmas of the toroidal turbulent momentum flux can be simultaneously measured at the same spatial position.

The application relates to a fast calculation method and system of discharge photon radiation spectrum and total light intensity in a gas medium, which comprises the following steps: step 1, establishing a discharge process numerical model of a to-be-detected discharge object, and solving discharge parameter distribution at each spatial position in a discharge area; step 2, calculating an electron temperature field at each spatial position based on the discharge parameter distribution; step 3, calculating a local radiation spectrum at each spatial position based on the electron temperature and combining spectral parameters of light-emitting particles at the spatial position, and obtaining an overall radiation spectrum and total light intensity; and step 4, repeating steps 2-3 to obtain full-time-space evolution results of the overall radiation spectrum and the total light intensity in the discharge process, and completing the calculation process. Compared with the prior art, the application has the advantages of efficient calculation of full-time-space spectrum evolution in a complex discharge process.

This invention relates to a simulation method for femtosecond laser sintering of metal nanoparticles, belonging to the field of femtosecond laser micro / nano-processing of metal materials technology. The method establishes a metal nanoparticle model at the nanoscale, calculates the evolution of electron temperature distribution and electron-phonon coupling energy within the metal nanoparticles by constructing a two-temperature equation model, and obtains the atomic motion and corresponding sintering process of the metal nanoparticles through molecular dynamics simulation. This invention fully considers the influence of the curved surface of the nanoparticles on laser energy deposition. The simulation results can reveal the sintering mechanism of metal nanoparticles, thereby guiding the processing and avoiding the inability of a single molecular dynamics model to consider the influence of electrons in the material on the laser response.