39 results about "Electron temperature" patented technology

The invention provides a method for analyzing femtosecond laser-induced damage behaviors on the surface of a Zn-doped KDP crystal, and belongs to the technical field of engineering optics based on computer data processing. The method comprises the following steps: firstly, respectively analyzing the influence of the Zn doping amount on the band gap and electroacoustic coupling of the KDP crystal through an ultraviolet-visible absorption spectrum and a Brillouin light scattering spectrum; then constructing a one-dimensional model, respectively simulating the electron density, lattice temperature and time evolution of electron temperature on the surface of the Zn-doped KDP crystal under femtosecond laser irradiation through an electron density accumulation rate equation and a double-temperature model, and theoretically analyzing the influence of the Zn doping amount on the damage behavior of the surface of the KDP crystal. And a theoretical model for calculating the femtosecond laser induced damage threshold is established, so that the optimal doping amount of Zn is determined in a lossless manner. A real sample is not contacted, so that the sample utilization rate is improved; the simulation process is more stable and controllable, and the data repeatability is high; and the research period can be shortened, and optimal doping amount screening is accelerated.

The invention discloses a multi-physical field coupling simulation method for a femtosecond laser ablation diamond packaging substrate, and relates to the technical field of ultrafast laser processing and semiconductor packaging. According to the method, a dual-temperature model considering multi-photon absorption, avalanche ionization, transient optical property change and electron-lattice energy transfer is constructed, and the ultrafast nonlinear process of interaction between femtosecond laser and diamond is simulated. On the basis of a finite element method, a Fokker-Planck equation and a double-temperature equation which are coupled are solved, evolution of free electron density, reflectivity, an absorption coefficient and electron temperature and lattice temperature is calculated in real time, and a free electron density threshold value serves as an ablation criterion to predict ablation morphology. According to the method, the mechanism of femtosecond laser ablation of the diamond can be accurately revealed, process parameters are optimized, the experiment trial and error cost is reduced, and theoretical guidance and a simulation tool are provided for high-precision and low-damage machining of the diamond packaging substrate.

The present invention provides a method and system for determining the physical properties of arc discharge plasma in transformer oil, relating to the field of data processing technology. The implementation scheme comprises: performing a power-frequency arc discharge on the transformer oil to determine the initial particle concentration of each element when a plasma channel is formed in the transformer oil, and collecting the radiation light from the power-frequency arc discharge; performing spectral analysis on the radiation light, and determining the particle type, heavy particle temperature, electron temperature, and excited-state temperature of the plasma in the transformer oil based on the spectral analysis results; iteratively correcting the initial particle concentration of each element based on the particle type, heavy particle temperature, electron temperature, and excited-state temperature of the plasma in the transformer oil to obtain a target particle concentration for each element; and determining the physical properties of the plasma in the transformer oil based on the target particle concentration for each element. This method can accurately describe the physical properties of the plasma in the transformer oil.

The application provides a method for analyzing a 4H-SiC femtosecond laser processing optimal energy interval, and belongs to the technical field of engineering optics based on computer data processing. First, the evolution of electron density, lattice temperature and electron temperature under irradiation is simulated by constructing a three-dimensional model and an electron density cumulative rate equation and a double-temperature model, so that the lattice modification threshold and the ablation threshold are determined. Then, a plurality of experimental data points are selected in the interval for single-pulse laser processing, the surface morphology, removal depth and removal radius of each data point are counted by using conventional characterization methods, and the accuracy and non-thermal removal threshold of the model are determined by observing the number of surface spatter particles and the flux calculation of the morphology edge. Further, the optimal structure modification energy interval, cold processing interval and hot ablation processing interval of 4H-SiC are determined. The application uses fewer sample damage test times, improves the sample utilization rate, shortens the research period, and accelerates the flux screening of the optimal laser processing.

The application provides a kind of management and control chemical fast LIBS classification identification model construction method, medium and system, belongs to management and control chemical technical field, the application is by collecting mercury argon reference lamp spectrum to carry out wavelength calibration, according to atomic spectrum database extraction management and control element characteristic transition wavelength window and compressed to low-dimensional feature space by sparse self-encoder, with hydrogen line starker broadening and Boltzmann graph slope method real-time inversion electron density and electron temperature and to compressed characteristic matrix is physically normalized, calculates plasma drift index to adaptively adjust plasma parameter decoupling double-flow condition graph network update strategy, the normalized characteristic matrix and physical diagnostic value are input into the artificial intelligence network to output element concentration vector and class prediction probability, solve the technical problems that plasma parameter fluctuation leads to laser-induced breakdown spectroscopy classification feature instability, classification accuracy significantly decreases under the condition of cross-instrument and cross-matrix.

The application discloses a method for inhibiting thermionic emission based on TTM-MD simulation, which adjusts the energy distribution and delay time of double pulses to regulate the electron temperature, and obtains the maximum delay time introduced under the condition of meeting the processing requirements according to the relationship between the temperature rising time and the delay. The method can obtain the maximum delay introduced under the condition of meeting the processing requirements, reduces the electron temperature, and inhibits the thermionic emission.

This invention provides a method for analyzing the femtosecond laser-induced damage behavior of Zn-doped KDP crystal surfaces, belonging to the field of engineering optics technology based on computer data processing. First, the effects of Zn doping concentration on the bandgap and electroacoustic coupling of the KDP crystal are analyzed using UV-Vis absorption spectroscopy and Brillouin scattering spectroscopy, respectively. Then, a one-dimensional model is constructed, and the time evolution of electron density, lattice temperature, and electron temperature on the Zn-doped KDP crystal surface under femtosecond laser irradiation is simulated using a rate equation for electron density accumulation and a two-temperature model. The influence of Zn doping concentration on the damage behavior of the KDP crystal surface is theoretically analyzed, and a theoretical model for calculating the femtosecond laser-induced damage threshold is established, thus non-destructively determining the optimal Zn doping concentration. This invention avoids contact with real samples, improving sample utilization; the simulation process is more stable and controllable with high data repeatability; it can also shorten the research cycle and accelerate the selection of the optimal doping concentration.

The application discloses a plasma electron temperature two-dimensional distribution multi-time point diagnosis method and device based on an X-ray waveband sheet array, equipment and a medium, and comprises the following steps: acquiring two X-ray coded images under the same time signal; reconstructing the X-ray coded images through a coded image reconstruction algorithm to obtain a high-resolution X-ray intensity image corresponding to each X-ray coded image; constructing a corresponding relationship between the intensity ratio and the electron temperature of the two high-resolution X-ray intensity images at the same position based on the working principle of a multi-channel filter sheet method; determining the electron temperature two-dimensional distribution information at the time point according to a plurality of corresponding relationships, and expanding the electron temperature two-dimensional distribution multi-time point data. The application belongs to the field of plasma electron temperature diagnosis. The application can improve the light collection efficiency and the spatial resolution.

Provided are a computer program, an information processing method, and an information processing device capable of anticipating estimation of a substrate processing state on the basis of spectral data measured during substrate processing.　A computer program according to the present embodiment causes a computer to execute: processing for acquiring spectral data measured pertaining to substrate processing; processing for separating the acquired spectral data into line spectral data for a plurality of reactive species; and processing for predicting at least one of electron density, electron temperature, or electron energy distribution for each of the reactive species on the basis of the separated line spectral data.

The application relates to the technical field of atomic spectrum detection, in particular to an FL-LIBS calibration-free method and device based on non-gated acquisition, equipment and a medium. The method comprises the following steps: obtaining a corrected spectrum and determining a target reference element; obtaining a plurality of candidate vectors and determining candidate simulation spectra; iteratively updating each candidate vector; determining a target simulation spectrum and an optimal vector; determining a target electron temperature and a target particle number density; determining the particle number densities of other elements in the sample to be measured according to the target electron temperature; and performing normalization calculation on the target particle number density and the particle number densities of the other elements to obtain the concentration composition of the sample to be measured. The application generates a plurality of unknown parameter groups, i.e. candidate vectors, and finds the optimal vector that best matches by means of an optimization algorithm, thereby providing a method for obtaining the electron temperature required for time-integrated spectrum in the case of being free from a high-speed gated detector, and realizing fast and accurate calibration-free quantitative analysis of FL-LIBS.

The present application provides a method and system for inferring an electron temperature from a hollow cathode plume color, applicable to diagnosis and inference of the electron temperature distribution of the hollow cathode under in-orbit or other vacuum environments. The method includes extraction of plume color data of the hollow cathode, two-dimensional processing of the plume color data, establishment of a correlation database between gridded colors and electron temperatures, and inference of the electron temperature distribution using the gridded colors. The inferred data of the electron temperature obtained in the present application exhibits trends consistent with measurement data obtained using a Langmuir probe, with diagnostic deviations within 30%. Based on the present application, researchers can directly leverage hollow cathode plume images to perform rapid, non-contact diagnosis of the electron temperature distribution characteristics.

This invention proposes a fast measurement method for the global average non-extensive parameter of a Hall thruster plasma. The method includes steps S1 (steady-state operation of the equipment), S2 (collecting cathode-side electron temperature, anode-side electron temperature, and discharge voltage), and S3 (calculating the global average non-extensive parameter Q). The analytical formula is: [Formula omitted for brevity]. This method abandons traditional distribution function fitting methods and directly analyzes the global average non-extensive parameter Q within the discharge channel by measuring relevant physical quantities of the anode and cathode. The analytical formula is concise and the calculation is fast, enabling on-orbit online real-time monitoring and parameter calculation. The entire process utilizes the existing temperature and pressure measurement circuits of the equipment without adding new hardware, achieving global, real-time, and low-cost measurement. It is suitable for strong non-equilibrium plasma conditions such as Hall thrusters, and the calculated non-extensive parameter can be applied to thrust modeling and operational condition monitoring.

The process for producing a diamond thin film comprises synthesizing a diamond thin film on a base material by a plasma-CVD process, wherein a starting gas containing C, H, and O is introduced into a vacuum vessel in which the base material is arranged, radio frequency current is applied to an antenna located inside or outside the vacuum vessel, which has a conductor element and a capacitive element electrically connected in series to generate an inductively coupled plasma inside the vacuum vessel, and the generated inductively coupled plasma is used for the plasma-CVD process. When the diamond thin film is synthesized, the plasma has the following properties: the electron temperature is 1.0 eV or higher and 2.0 eV or lower; the electron density is 1.0 × 10⁻⁶ 11 cm -3 or more and 1.0 × 10 12 cm -3or less; and the ion saturation current is 1.0 × 10 -4 A or more and 1.0 × 10 -2 A or less.

The present invention provides a method and device for modeling pulse arc plasma based on high-speed images. The method includes: collecting pulse arc image data, voltage and current; calculating the brightness center position and pulse arc calculation matrix; gridding the pulse arc and obtaining a three-dimensional distribution of pulse arc plasma density; calculating the electron migration speed of each horizontal layer; calculating the three-dimensional distribution of conductivity and obtaining the three-dimensional distribution of electron collision frequency and electron temperature; calculating the total energy of pulse arc particles and the total macroscopic energy of pulse arc ， When the difference between the total energy of the particles and the total macroscopic energy meets the convergence condition, the modeling is completed. This solution has a simple modeling method, more realistic and effective model parameters, and is time-varying, making it widely applicable.

The present application relates to the technical field of coal quality industrial analysis, and provides a coal quality industrial analysis method based on laser-induced breakdown spectroscopy characteristic peak selection set, comprising the following steps: data acquisition, using laser-induced breakdown experiment to collect coal sample spectrum data; data preprocessing, sequentially completing spectrum continuous radiation removal, local maximum value peak searching, characteristic peak selection, spectrum peak value fitting, and solving electron density and plasma electron temperature; quantitative analysis, taking standard coal sample test results as a training set, and using partial least square regression method to realize quantitative calculation of coal quality industrial analysis components of the sample; the present application can realize coal quality industrial quantitative analysis based on laser-induced breakdown spectroscopy, is suitable for the characteristic peak set of coal quality industrial analysis, and the integrated application of the method can achieve fitting degrees of sample ash content, volatile matter and fixed carbon all above 0.85.

This invention provides a method for obtaining a laser damage threshold, comprising constructing a model for obtaining the laser damage threshold. The model includes an instantaneous damage model and a thermal accumulation damage model. The instantaneous damage model represents the volumetric heat source distribution, electron temperature change, lattice temperature change, and stress transmission after a single-pulse laser irradiates a sample material. The thermal accumulation damage model represents the volumetric heat source distribution, electron temperature change, and lattice temperature change influenced by the environment after multi-pulse laser irradiates the sample material. The method obtains the physical property parameters of the test material and the laser source parameters. Based on the physical property parameters of the test material, the laser source parameters, and the model for obtaining the laser damage threshold, the laser damage threshold is obtained. This method eliminates the time and material cost associated with numerous destructive experiments, reducing costs while improving the detection efficiency of the laser damage threshold. This invention also provides a photoacoustic measurement device.

The application relates to an arc reignition determination method and device, computer equipment and a storage medium. After a vacuum circuit breaker cuts off a circuit of a power system, a target space-time coordinate point of the vacuum circuit breaker is acquired; the target space-time coordinate point comprises a time coordinate and a space coordinate, the time coordinate corresponds to different time points in an arc-after medium recovery process, and the space coordinate corresponds to different positions in a vacuum circuit breaker electrode gap; the target space-time coordinate point is input into a target simulation model to obtain a target simulation physical quantity; the target simulation physical quantity comprises at least one of electric potential, electron number density, ion number density and electron temperature; and then, according to the target simulation physical quantity, a reignition evaluation result of the arc is determined. According to the above scheme, the target simulation physical quantity can be quickly obtained by inputting the target space-time coordinate point into the target simulation model, a large number of particles do not need to be simulated, and therefore, the simulation efficiency is improved.

The application provides an on-orbit thrust adjusting device and method for a Hall thruster based on a channel wall temperature, belongs to the technical field of aerospace plasma propulsion, and is characterized in that the channel wall temperature adjusting device is built for the Hall thruster under ground and on-orbit conditions. In the ground experiment stage, the parameters of different working conditions are adjusted, the wall temperature of the outer wall of the Hall thruster channel, the electron temperature and the electron density of the plume area are obtained, and a mapping database is established. In the on-orbit experiment stage, when the satellite-borne Hall thruster runs stably, the wall temperature of the outer wall of the satellite-borne Hall thruster channel, the electron temperature and the electron density of the plume area are obtained under different working conditions. The on-orbit adjustment of the thrust is carried out by changing the voltage, the excitation current and the airflow of the satellite-borne Hall thruster. The thrust is verified by combining the electron temperature and the electron density, so that the accuracy of the thrust is ensured.

The application provides a limiter heat flow measurement method under EAST long pulse low parameter discharge, and belongs to the technical field of thermal load diagnosis of controlled nuclear fusion device, and comprises the following steps: obtaining measured heat flux data; setting electron temperature; obtaining heat flow decay length; realizing magnetic line tracing according to a three-dimensional model of the limiter and the first wall component and an experimental magnetic field file to obtain tracing results; obtaining magnetic connection results; setting heat flow decay width and heat flow value at the middle plane 2350 mm to simulate parallel heat flow distribution on the limiter surface; adjusting the maximum / minimum heat flow decay width to make the simulated heat flux trend consistent with the measured heat flux data; adjusting the boundary electron temperature at the middle plane 2350 mm to make the heat flow integral value of each column of tungsten blocks match the measured heat flux data; and outputting a three-dimensional heat flow distribution diagram of the limiter surface to realize the consistency of simulation and measurement. The application can obtain stable and reliable limiter heat flow spatial distribution results under low parameter working conditions.

The invention relates to an arc reignition determination method and device, computer equipment and a storage medium, and the method comprises the steps: obtaining a target space-time coordinate point of a vacuum circuit breaker after the vacuum circuit breaker cuts off a circuit of a power system; wherein the target space-time coordinate points comprise time coordinates and space coordinates, the time coordinates correspond to different moments in the post-arc medium recovery process, and the space coordinates correspond to different positions in the electrode gap of the vacuum circuit breaker; inputting the target space-time coordinate point into a target simulation model to obtain a target simulation physical quantity; wherein the target simulation physical quantity comprises at least one of potential, electron number density, ion number density and electron temperature; and determining a reignition evaluation result of the arc according to the target simulation physical quantity. According to the scheme, the target time-space coordinate point is input into the target simulation model, so that the target simulation physical quantity can be quickly obtained, and massive particles do not need to be simulated, thereby improving the simulation efficiency.

The present invention relates to the field of plasma probe calibration, and provides a plasma probe array calibration method based on radiation spectroscopy and infrared imaging. The surface temperature of the probe array is measured, and the plume parameters of the stably operating Hall thruster are measured using the probe array to obtain the volt-ampere characteristic curve collected by the probe array at this time. An infrared imager is then used to measure the surface temperature of the probe array to obtain the temperature difference of the probe heated by bombardment. Combined with the secondary electron emission coefficient of the probe surface, the secondary current value is calculated. Combined with the ion current value measured by the probe itself, the electron current value is corrected to obtain a true volt-ampere characteristic curve, and the accurate electron temperature density is calculated. A spectrometer is used to measure the electron temperature electron density at this time through spectroscopy, and the electron temperature electron density measured by the modified probe is compared to achieve calibration of the plasma probe array. This is used to solve the problem that the probe measurement results lack calibration and the accuracy is difficult to assess.

This invention provides a method and system for inverting electron temperature from the optical color of a hollow cathode plume. It is applicable to the inversion and diagnosis of electron temperature distribution in hollow cathodes under on-orbit or other vacuum environments. The method is based on the extraction of optical color data from the hollow cathode plume, the two-dimensional processing of the plume optical color data, the establishment of a gridded optical color correlation database with electron temperature, and the inversion of electron temperature distribution using the gridded optical color. The electron temperature inversion data of this invention shows a trend consistent with Langmuir probe measurement data, with a diagnostic deviation within 30%. Based on this invention, researchers can directly and rapidly diagnose electron temperature distribution characteristics using hollow cathode plume photographs without physical contact.

The present disclosure provides a method for determining the electron temperature of xenon plasma based on a radiation collision model, comprising: determining the rate equation of atomic energy levels in a steady-state approximation state; determining the dominant particle reaction type in the xenon plasma in a Z-pinch fusion; determining the rate balance equation of the xenon plasma according to the dominant particle reaction type in the xenon plasma and the rate equation of atomic energy levels in the steady-state approximation state; determining the population density ratio of adjacent energy levels; determining the simplified rate balance equation of the xenon plasma according to the population density ratio of adjacent energy levels; determining the spectral line intensity ratio; and determining the electron temperature of the xenon plasma according to the simplified rate balance equation of the xenon plasma, the spectral line intensity ratio, and a preset Boltzmann equation. By the present disclosure, the electron temperature of the xenon plasma under the Z-pinch condition is calculated simply by the relative light intensity line ratio method, the data processing amount is reduced, and the data accuracy is improved.

The invention discloses a single crystal diamond deposition quality intelligent detection method based on OES spectrum, and the method comprises the steps: extracting OES spectrum data in a deposition area, carrying out the preprocessing, extracting spectral features from the preprocessed OES spectrum data through a convolutional neural network, and calculating plasma feature parameters; the plasma characteristic parameters comprise electron density and electron temperature, constructing a time sequence prediction model, obtaining a correlation model of the plasma characteristic parameters and deposition indexes, detecting the deposition quality according to the correlation model, and performing feedback control on the process parameters according to the detection result. According to the method, by integrating an optical emission spectrum technology and an intelligent algorithm, the limitation of a traditional detection method is overcome, dynamic analysis of plasma parameters and high-precision prediction of deposition quality are achieved, and meanwhile good interpretability is achieved.

The present invention provides a method and system for simulating the electron radiation environment in a space orbit. The system comprises a femtosecond laser system, an optical system, a composite target, a magnet, a beam detector, and an electron spectrometer, all connected in sequence. The method for simulating the electron radiation environment in a space orbit using this system includes acquiring target orbit information and obtaining electron energy spectrum information corresponding to the target orbit; while keeping the laser and target II parameters fixed, varying the density and length of target I, collecting information on the energy and number of electron beams generated by target II, and obtaining electron beam energy spectrum information as well as its corresponding electron temperature and electron cutoff energy; when the electron temperature and electron cutoff energy obtained by adjusting the density and length of target I match those of the target orbit, the target orbit electron radiation environment is obtained. The present invention enables ground-based simulation of the electron radiation environment in a space orbit, filling a gap in the field of ground-based simulation of radiation environments in different orbits.

The invention provides a method for analyzing the optimal energy interval of 4H-SiC femtosecond laser processing, and belongs to the technical field of engineering optics based on computer data processing. The method comprises the following steps: firstly, respectively simulating evolution of electron density, lattice temperature and electron temperature under irradiation by constructing a rate equation of a three-dimensional model and electron density accumulation and a double-temperature model, and determining a lattice modification threshold value and an ablation threshold value; then, a plurality of experimental data points are selected in the interval for single-pulse laser processing, a conventional characterization means is used for counting the surface appearance, the removal depth and the removal radius of each data point, and the accuracy and the non-thermal removal threshold value of the model are calculated and determined by observing the number of splashing particles on the surface and the appearance edge flux. And further determining an optimal structure modification energy interval, a cold processing interval and a thermal ablation processing interval of the 4H-SiC. According to the method, less sample damage test times are used, the sample utilization rate is increased, the research period is shortened, and flux screening of optimal laser processing is accelerated.

The invention provides a limiter heat flow measurement method under EAST long-pulse low-parameter discharge, and belongs to the technical field of thermal load diagnosis of a controlled nuclear fusion device, and the method comprises the steps: obtaining actually measured heat flux data; setting an electronic temperature; obtaining a heat flow attenuation length; according to the limiter, the first wall component three-dimensional model and the experimental magnetic field file, magnetic line tracking is achieved, and a tracking result is obtained; obtaining a magnetic connection result; setting a heat flow attenuation width and a heat flow value at 2350 mm of a middle plane, and simulating parallel heat flow distribution on the surface of the limiter; adjusting the maximum / minimum heat flux attenuation width to enable the simulated heat flux trend to be consistent with the actually measured heat flux data; the boundary electron temperature at the 2350 mm position of the middle plane is adjusted, so that the heat flux integral value of each column of tungsten blocks is matched with the actually measured heat flux data; and outputting a three-dimensional heat flow distribution diagram on the surface of the limiter to realize the matching of simulation and actual measurement. According to the method, a stable and reliable limiter heat flow space distribution result can be obtained under the low-parameter working condition.

The invention relates to a gas arc parameter measurement method and device based on an emission spectrum. The method comprises the following steps: generating a steady-state gas arc in an arcing tank body through an emission spectrum experimental platform, and collecting a self-luminous signal of the steady-state gas arc in a steady-state arcing stage; acquiring a plurality of atomic emission spectral lines and spectral intensity data of a target element in a preset wavelength range according to the self-luminous signal; calculating an electron temperature space distribution value of the gas arc by adopting a Boltzmann diagram method based on the plurality of atomic emission spectral lines and the spectral intensity data; and calculating the electron density of the gas arc by adopting a second-order Stark broadening method based on the plurality of atomic emission spectral lines and the spectral intensity data. By adopting the method, high-precision and repeatable quantitative measurement of gas arc key microscopic parameters (such as electron temperature and electron density) can be realized.

The invention provides a nonlinear multi-field coupling simulation method for femtosecond laser processing of a glass substrate, and relates to the technical field of femtosecond laser micromachining, and the method comprises the following steps: constructing a substrate physical model corresponding to the glass substrate based on material parameters of the glass substrate; constructing a nonlinear ionization model according to the substrate physical model and a coupled multi-photon absorption and avalanche ionization mechanism; constructing a transient optical response model based on a Dyde model and a nonlinear ionization model so as to obtain a change curve corresponding to the free electron density; an electron-lattice heat transfer model is constructed based on the double-temperature equation, and evolution curves of electron temperature and lattice temperature are obtained respectively; according to a preset critical plasma density condition, a simulation ablation morphology corresponding to the substrate physical model is predicted; and comparing the simulated ablation morphology with the experimental ablation morphology to obtain a simulated comparison result, and adjusting femtosecond laser processing parameters according to the simulated comparison result. According to the method, the accuracy of ablation morphology reconstruction is improved.