172 results about "Electron temperature" patented technology

To provide a semiconductor device having a circuit with high operating performance and high reliability, and improve the reliability of the semiconductor device, thereby improving the reliability of an electronic device having the same. The aforementioned object is achieved by combining a step of crystallizing a semiconductor layer by irradiation with continuous wave laser beams or pulsed laser beams with a repetition rate of 10 MHz or more, while scanning in one direction; a step of photolithography with the use of a photomask or a leticle including an auxiliary pattern which is formed of a diffraction grating pattern or a semi-transmissive film having a function of reducing the light intensity; and a step of performing oxidation, nitridation, or surface-modification to the surface of the semiconductor film, an insulating film, or a conductive film, with high-density plasma with a low electron temperature.

A plasma processing apparatus includes an antenna unit for generating plasma by using microwaves as a plasma source in such a way that a first region having a relatively high electron temperature of plasma, and a second region having a lower electron temperature of plasma than the first region are formed in a chamber, a first arranging means for arranging a semiconductor substrate W in the first region, a second arranging means for arranging the semiconductor substrate in the second region, and a plasma generation stopping means for stopping the generation of plasma of a plasma generating means, while the semiconductor substrate is arranged in the second region.

A plasma processing apparatus includes a first electrode and a second electrode so arranged in the upper portion of a processing chamber as to face a mounting table, a gas supply unit for supplying a processing gas between the first electrode and the second electrode, a RF power supply unit for applying a RF power between the first electrode and the second electrode for converting the process gas supplied between the electrodes into a plasma, and a gas exhaust unit for evacuating the inside of the processing chamber to a vacuum level from the lower portion of the processing chamber. Since the electron temperature in the plasma is low near a substrate on the mounting table, damage to the substrate caused by the plasma can be suppressed. In addition, since a metal can be used as a material for the processing chamber, the processing chamber can have good temperature controllability.

The present invention relates to a method and structure for controlling plasma uniformity in plasma processing applications. Electron thermal conductivity parallel and perpendicular to magnetic field lines differs by orders of magnitude for low magnetic fields (on the order of 10 gauss). This property allows the directing of heat flux by controlling the magnetic field configuration independent of ions since the effect of modest magnetic fields upon the transport of ions themselves is minimal. Heat is preferentially conducted along magnetic field lines with electron temperatures on the order of 0.1 to 1 eV/cm being sufficient to drive kilowatt-level heat fluxes across areas typical of plasma processing source dimensions.

A plasma processing system is provided with diagnostic apparatus for making in-situ measurements of plasma properties. The diagnostic apparatus generally comprises a non-invasive sensor array disposed within a plasma processing chamber, an electrical circuit for stimulating the sensors, and means for recording and communicating sensor measurements for monitoring or control of the plasma process. In one form, the sensors are dynamically pulsed dual floating Langmuir probes that measure incident charged particle currents and electron temperatures in proximity to the plasma boundary or boundaries within the processing system. The plasma measurements may be used to monitor the condition of the processing plasma or furnished to a process system controller for use in controlling the plasma process.

It is arranged so that ions can be analyzed accurately and with high sensitivity. A first electrode 11 is provided on the outer periphery of a dielectric cylindrical body 13 and a second electrode 12 is placed inside the cylindrical body 13 leaving a clearance between itself and the inner surface of the cylindrical body 13. When an AC high voltage is impressed across the first electrode 11 and second electrode 12, a barrier discharge occurs within the cylindrical body 13. When a distal end portion 12a of the second electrode 12 projects outwardly from the distal end of the cylindrical body 13, a thermal equilibrium plasma P having a low electron temperature is generated outwardly of the distal end of the cylindrical body 13 without a plasma jet ascribable to the barrier discharge emerging outwardly from the distal end of the cylindrical body 13. By exposing a sample S to the thermal equilibrium plasma P, particles (atoms, molecules) desorbed from the sample S undergo soft ionization without being decomposed or polymerized. The ions generated are introduced to a mass analyzer 50.

A manufacturing method of a semiconductor device of the present invention includes the steps of forming a first insulating film over a substrate, forming a semiconductor film over the first insulating film, oxidizing or nitriding the semiconductor film by conducting a plasma treatment to the semiconductor film under a condition of an electron density of 1×10¹¹ cm⁻³ or more and 1×10¹³ cm⁻³ or less and an electron temperature of 0.5 eV or more and 1.5 eV or less, using a high frequency wave, forming a second insulating film to cover the semiconductor film, forming a gate electrode over the second insulating film, forming a third insulating film to cover the gate electrode, and forming a conductive film over the third insulating film.

A surface-plasmon-coupled thermoelectric apparatus includes a first surface-plasmon substrate and a thermoelectric substrate electrically coupled to a plurality of electrodes. The substrates are electrically isolated from each other, and a first face of the thermoelectric substrate opposes a first face of the first surface-plasmon substrate to define a phonon insulating gap. A method of transferring thermal energy across the phonon insulating gap includes creating a first surface-plasmon polariton at the first surface-plasmon substrate when the first surface-plasmon substrate is coupled to a first thermal reservoir. Also included is creating a nonequilibrium state between the electron temperature and the phonon temperature at a first face of the thermoelectric substrate, when a second face of the thermoelectric substrate is coupled to a second thermal reservoir. Also included is coupling the first surface plasmon polariton with electrons in the thermoelectric substrate across the phonon insulating gap, thereby transferring thermal energy between the thermal reservoirs through the phonon insulating gap.

The invention relates to a high-precision and constant temperature and humidity cabinet, which is used for storing special articles. The temperature and humidity in the cabinet can be controlled within designated scope automatically and constantly. In the invention, a cooling/heating semiconductor high-temperature stacking is used as a temperature control and dehumidification executive component, an ultrasonic wave humidifier is used as a humidification executive component, and an electric temperature/humidity sensor, a series of fans, keys, a display, a controller and the like are mounted, thereby realizing constant temperature and humidity. When temperature inside the cabinet is higher than preset target temperature, the temperature control semiconductor high-temperature stacking generates forward current to reduce the temperature inside the cabinet; when temperature inside the cabinet is lower than the preset target temperature, the temperature control semiconductor high-temperature stacking generates reverse current to raise the temperature inside the cabinet to the preset target temperature; when humidity inside the cabinet is higher than preset target humidity, the dehumidification semiconductor high-temperature stacking generates forward current to reduce the temperature of a condensation block in the cabinet to be below the dew point, so as to enable moisture in the cabinet to condensate and flow into a water tank to realize dehumidification effect; and when humidity inside the cabinet is lower than preset target humidity, an ultrasonic wave humidifier sprays water mist to raise the humidity in the cabinet to the preset target humidity.

An object is to provide a technique to manufacture an insulating film having excellent film characteristics. In particular, an object is to provide a technique to manufacture a dense insulating film with a high withstand voltage. Moreover, an object is to provide a technique to manufacture an insulating film with few electron traps. An insulating film including oxygen is subjected to plasma treatment using a high frequency under the conditions where the electron density is 1×10¹¹ cm⁻³ or more and the electron temperature is 1.5 eV or less in an atmosphere including oxygen.

The present invention provides a manufacturing method of a semiconductor device at low cost and with high reliability. According to one feature of a method for manufacturing a semiconductor device includes the steps of forming a metal film over a substrate; forming a metal oxide film over the surface of the metal film by performing plasma treatment to the metal film in an atmosphere containing oxygen; forming a base film over the metal oxide film; forming an element layer having a thin film transistor over the base film; forming a protective layer over the element layer; forming an opening after selectively removing the metal film, the metal oxide film, the base film, the element layer, and the protective layer; separating the base film, the element layer, and the protective layer from the substrate; and sealing the base film, the element layer, and the protective layer by using flexible first and second films, in which an electron density of plasma around the substrate is 1×10¹¹ cm⁻³ or more and 1×10¹³ cm⁻³ or less and an electron temperature of the plasma treatment is 0.5 eV or more and 1.5 eV or less.

A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (T_e). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

A method and apparatus for detecting the endpoint in a dry plasma etching system comprising a first electrode (e.g., upper electrode) and a second electrode (e.g., lower electrode) upon which a substrate rests is described. A direct current (DC) voltage is applied between the first electrode and a ring electrode surrounding the second electrode, and the DC current is monitored to determine the endpoint of the etching process. The DC current is affected by the impedance of the plasma, and therefore responds to many variations including, for example, the plasma density, electron/ion flux to exposed surfaces, the electron temperature, etc.

Magnetically shielded miniature Hall thrusters are disclosed that use a unique magnetic field topology that prevents the magnetic field lines from intersecting the discharge channel walls in the acceleration region of the thruster. Instead, the lines of force originating from both the inner and outer pole pieces curve around the downstream edges of the discharge channel and follow the channel walls towards the anode. This unique field topology results in low electron temperature at the discharge channel walls while eliminating strong electric field components that would otherwise lead to high erosion rates and power deposition from ion acceleration into the channel walls.

The invention discloses a fusion reactor plasma density and temperature diagnosing method based on the Thomson scattering weak coherent technique. The method comprises the steps that a broadband low-coherency intense light source is set, a bandwidth modulator is set, a beam splitting system is set, a reference arm is used for generating an optical path difference and a frequency shift signal, the light returned from the reference arm and a detection arm interferes and passes through an optical grating to be divided into interference spectrum signals with different wavelengths to be received by an array CCD, the incident light direction, namely the axial scattering intensity distribution is obtained through the Fourier transform, and the plasma electron density axial distribution information is obtained through rayleigh scattering or raman scattering absolute calibration; the thermal motion rate information of electrons is obtained through the Doppler broadening of a spectral line, and then the plasma electron temperature distribution is obtained; the horizontal movement adjustment is carried out on the length of the reference arm to change the optical path difference changing so as to achieve measurement on the great depth plasma with the depth larger than 1 m. The electron temperature and density of the fusion reactor plasma are measured online through the Thomson back scattering optical coherent chromatographic technique.

The invention discloses a multistage cusped magnetic field plasma thruster segmented ceramic channel, relates to the field of plasma thrusting, and aims to solve the problems of plume concussion of an outlet area of a multistage cusped magnetic field plasma thruster, large plume divergence angle, over-high wall temperature of a ceramic channel and low ionization rate. The front section of the ceramic channel is of a baffle structure, so that corrosion of the front end face of the thruster caused by electrons is decreased, the front section of the ceramic channel and an outlet permanent magnet form a magnet loop with a certain shielding function, the magnetic field intensity of the outlet plume area is reduced, the electrons more easily enter the channel to perform ionization, potential drop is concentrated in an outlet magnetic interface, the plume divergence angle is decreased, boron nitride ceramics of a middle section has a low secondary electron emission coefficient, the electron temperature and the ionization rate are high, heat insulation ceramics close to a rear section of an anodic area reduce anodic heat absorbed by the channel, the anodic heat is conducted and dissipated by the aid of an anodic bottom surface, heat dissipation of the permanent magnet is decreased, and demagnetization of the permanent magnet due to high temperature is avoided. The multistage cusped magnetic field plasma thruster segmented ceramic channel is applicable to the field of plasma thrusting.

The invention belongs to the field of plasma diagnosis computer processing, in particular to a processing method and device for multi-channel energy spectrum measurement. The processing method includes the following steps: collecting a pulse signal sent by a probe and converting it into a digital pulse signal; counting and classifying the digitized pulse signal to obtain a count spectrum; converting the count spectrum into an energy spectrum; The energy attenuation produced by the beryllium foil is reduced, and the energy spectrum obtained in the third step is restored; the energy spectrum after reduction is smoothed and peaked and fitted to obtain the electron temperature. The processing device includes a pulse signal generation module, a high-speed acquisition card, an analog/digital signal conversion module, a high-speed cache module, and a processor unit with an energy counting module and a temperature calculation module. The problems of common multi-channel energy spectrum measurement and processing methods, such as high hardware cost, strong equipment specificity, limited number of energy channels, low spatial and temporal resolution, and inability to save original signals, are solved.

A flange, which forms a portion of a vacuum container, has a rectangular opening surrounded by an insulating frame. A plate-shaped radio-frequency antenna conductor 13 is provided so as to cover the opening, with the insulating frame clamped thereby. In this structure, a radio-frequency power source is connected via a matching box to one end along the length of the radio-frequency antenna conductor, the other end is connected to ground, and electric power is supplied so that a radio-frequency current flows from one end of the radio-frequency antenna conductor to the other. By this method, the impedance of the radio-frequency antenna conductor can be lowered, and high-density plasma with a low electron temperature can be efficiently generated.