15 results about "Power deposition" patented technology

Two-dimensional (2D) materials formed in very thin layers improve the performance of semiconductor devices. However, forming contacts on 2D materials tends to damage and penetrate the 2D material. Relatively gentle etching processes have been developed that are highly selective for 2D materials and allow etching of vertical holes into the 2D material without damaging or penetrating it. Low-power deposition processes form a protective liner when performing metal filling, further preventing damage to the 2D material when forming metal contacts within holes. These processes make it possible to form vertical metal contacts on planar 2D materials or vertical sidewall contacts within 3D NAND without damaging the 2D material. This increases the contact area, reduces contact resistance, and improves the performance of the 2D material in the device.

This invention provides a method for simulating and analyzing antenna power deposition efficiency and magnetic field, relating to the field of plasma engineering technology. The method includes: constructing a simulation model based on a helical antenna and plasma; constructing control equations for the simulation model; obtaining configuration information of the helical antenna and calculating corresponding physical field components based on the configuration information; the physical field includes wave magnetic field, wave electric field, and current density field; calculating physical field information at different locations based on the physical field components using the control equations; identifying the magnetic field information to generate helical wave components and TG wave components; analyzing the physical field information to obtain the influence law of performance indicators; and filtering the configuration information of the helical antenna based on the influence law of performance indicators to obtain a design scheme for the helical antenna as a plasma source, which can provide an effective ICP source design scheme.

The invention relates to the technical field of ray sources, and provides a high-energy large-dose-rate micro-focus X-ray source, which comprises an injector, an X-ray source, a high-energy large-dose-rate micro-focus X-ray source and a high-energy large-dose-rate An inlet of a high-frequency cavity of the petal accelerator is aligned with an outlet of the injector, and the petal accelerator is used for accelerating the electron beam current; an inlet of the focusing assembly is aligned with an outlet of a high-frequency cavity of the petal accelerator, and the focusing assembly is used for focusing the accelerated electron beam current; and a target disc of the rotating target is used for receiving the focused electron beam, and the rotating center of the rotating target is not aligned with the outlet of the focusing assembly. The invention further provides a working method. The working method comprises the following steps that S1, electron beams emitted by the injector enter the petal accelerator to be accelerated; s2, the accelerated electron beam enters a focusing assembly to be focused; and S3, the focused electron beams bombard the rotating target, and the electron beams are uniformly arranged in a power deposition area on a target disc of the rotating target in the circumferential direction of the rotating target.

The application discloses a method for measuring reverse positive ion current of a high-power negative ion source, and relates to the field of high-current ion source diagnosis.The method comprises the following steps: obtaining the cooling water flow and the temperature of the cooling water on each component of the high-power negative ion source; designing and manufacturing a specific back plate for measuring the profile of the reverse positive ion current; measuring the real-time temperature rise value and the flow of the cooling water on the ion source component, and analyzing the heat deposition on each component; measuring the temperature rise value and the flow of the cooling water on each component under the condition of beam extraction, analyzing the heat deposition on each component, comparing and analyzing the power deposition change on the component bombarded by the reverse positive ion current with and without beam extraction, and obtaining the reverse positive ion current power under the operation parameter; and changing the operation parameter of the negative ion source alone, repeating the experiment, and obtaining the influence law of the parameter on the reverse positive ion current.The application provides a basis for the design and optimization of the back plate of the ion source expansion chamber and the back plate of the Faraday shield and the safe and stable operation of the high-power negative ion source.

The present application relates to a kind of TCO equipment intelligent regulation and control heterojunction cell sheet resistance and film thickness method, belong to solar cell manufacturing technical field.It includes: the silicon wafer to be detected is placed on carrier plate and is transported to detection platform;Detection platform detects the sheet resistance of the silicon wafer to be detected and the film thickness of transparent conductive film;Control end determines whether the sheet resistance of the battery and / or the film thickness of transparent conductive film prepared by current transparent conductive film deposition equipment exceeds their respective quality process control range according to detection result;If yes, correct the oxygen flow and / or output power of transparent conductive film deposition equipment;The transparent conductive film of the silicon wafer transported subsequently is deposited according to the oxygen flow and / or output power after correction.The present application provides a kind of method for intelligently regulating and controlling heterojunction cell sheet resistance and TCO film thickness, and the oxygen flow and output power of transparent conductive film deposition equipment are regulated and controlled by the method, which saves manpower, slurry and cost.

This invention provides a method for preparing an AlScN piezoelectric coating material with high mechanical properties and high temperature resistance. The method includes: using an alloy target composed of Al and Sc, forming an AlScN piezoelectric functional layer on a substrate surface via magnetron sputtering; and controlling the volume ratio of argon to nitrogen, temperature, sputtering power, deposition pressure, and target-substrate distance during magnetron sputtering to allow the AlScN piezoelectric functional layer to grow in multiple orientations during deposition. The AlScN piezoelectric coating material obtained by this invention exhibits excellent mechanical properties, temperature resistance, and corrosion resistance. When deposited on a substrate, this coating material can simultaneously generate longitudinal waves, longitudinal and transverse waves, and transverse waves to achieve defect detection and stress measurement in steel plates, welds, and steel pipes in various media. Furthermore, it exhibits long-term stable service capability under high temperature and harsh operating conditions without the need for a protective layer, meeting long-term usage requirements, facilitating mass production, and possessing promising prospects for promotion and application.

A method of depositing a material layer on a substrate in a vacuum processing system is described. The method includes depositing a first portion of the material layer at a first deposition power to increase a temperature of the substrate to a first temperature; and depositing a second portion of the material layer at a second deposition power lower than the first deposition power, the second deposition power being configured to cause the substrate to be at about the first temperature or below until a final layer thickness of the material layer being reached.

The application provides a preparation method of a high-temperature-resistant AlN piezoelectric coating material capable of exciting multiple ultrasonic waves, and comprises the following steps: forming an AlN piezoelectric functional layer on the surface of a substrate by using an Al target through magnetron sputtering; and controlling the volume ratio of argon and nitrogen, the temperature, the sputtering power, the deposition pressure and the target-substrate distance in the magnetron sputtering so that the AlN piezoelectric functional layer grows in multiple orientations during the deposition process. The AlN piezoelectric coating material prepared by the application has good mechanical properties, temperature resistance and corrosion resistance, and can ensure the long-term stable service ability of the AlN piezoelectric coating under high temperature and harsh working conditions without a protective layer, reduce the failure possibility caused by corrosion and other factors, and realize the accurate nondestructive measurement of the bolt pretightening force, or realize the steel substrate defect detection and stress measurement. The sputtering technology adopted by the application is a general technology in the industry, and the industrial production batch is easy to realize, the processing efficiency is high, and the production cost of the manufacturer can be greatly reduced.

This invention relates to the field of semiconductor packaging technology and discloses a manufacturing process for a redistribution structure in integrated circuit packaging, comprising: coating a dielectric polymer precursor on a substrate surface and heat-treating it to a semi-cured state, so that the initial crosslinking degree is in the range of 25% to 40%; sputtering a first metal seed layer with a power of 300W to 500W, using particle bombardment energy to induce a high crosslinking density surface layer in situ on the polymer surface, while constructing a complex bonding interface between the metal and polymer functional groups; subsequently increasing the power to 1500W to 2500W to deposit a second metal seed layer, using the high crosslinking density surface layer to block atomic penetration; and finally thermal curing. This invention effectively solves the polymer thermal damage caused by high-power deposition by constructing an in-situ shell formation mechanism in a semi-cured transient state, synergistically achieving adaptive relaxation of interface stress and hybrid enhancement of interlayer bonding force.

The invention provides a low-damage high-compactness cadmium telluride passive film and a preparation method and application thereof.The preparation method comprises the steps that multiple thin-layer CdTe films are deposited on the surface of a substrate material in a step-by-step magnetron sputtering mode, and every two adjacent thin-layer CdTe films are deposited through different sputtering powers, the CdTe passive film is obtained until the total thickness of the multiple thin CdTe films on the substrate material reaches the designed thickness of the CdTe passive film; wherein the sputtering power adopted for deposition of the thin CdTe film close to the substrate material does not exceed a threshold value causing damage to the surface of the substrate material. According to the method, the cadmium telluride passivation film is deposited through step-by-step magnetron sputtering with different powers, the problem that a large number of pores exist in the cadmium telluride passivation film prepared through traditional single sputtering power deposition is effectively solved, the high-compactness cadmium telluride passivation film can be obtained, low sputtering power is adopted when the design is close to a substrate material for magnetron sputtering deposition, and the high-compactness cadmium telluride passivation film is obtained. The problem that the surface of a substrate material is damaged due to fixed high-sputtering-power deposition in the sputtering deposition process of a traditional cadmium telluride passive film is solved.

The invention discloses a high-power negative ion source reverse positive ion flow measurement method, and relates to the field of high-current ion source diagnosis, and the method comprises the steps: obtaining the cooling water flow and the cooling water temperature of each component of a high-power negative ion source; a specific backboard is designed and manufactured for reverse positive ion flow profile measurement; the real-time temperature rising value and flow of cooling water on the ion source component are measured, and heat deposition on each component is obtained through analysis; the temperature rise value and the flow of cooling water on each component under the beam extraction condition are measured, heat deposition on each component is analyzed, the power deposition change on the component bombarded by the reverse positive ion current when the beam extraction condition exists or not is compared and analyzed, and the reverse positive ion current power under the operation parameters is obtained; the negative ion source operation parameters are singly changed, the experiment is repeated, and the influence rule of the parameters on the reverse positive ion flow is obtained. According to the invention, a basis is provided for design optimization of the ion source expansion chamber back plate and the Faraday shield back plate and safe and stable operation of the high-power negative ion source.

The invention discloses a NiP binary alloy preparation process and system, and particularly relates to the field of NiP binary alloy preparation, the NiP binary alloy preparation process comprises the steps of S1, base material pretreatment, S2, preparation before plating, S3, parameter initialization, adjustment of the plating solution temperature of an electrolytic bath through a temperature control unit, S4, electrified deposition, starting of a high-frequency switching power supply, and output of current in the electrolytic bath in a constant current mode, and S5, post-plating treatment. A servo motor drives a lead screw to drive a moving block to horizontally move along a guide rod, a motor in a balance block is matched to drive a rotating shaft to drive the base material to rotate, the coating thickness of the base material is monitored in real time through an eddy current thickness gauge, when the coating thickness reaches 10-50 microns, electrification is stopped, and the base material in an electrolytic bath is taken out for drying. And each point on the surface of the base material is alternately contacted with a'fresh area 'and a'consumption area' of the plating solution, so that the influence of the plating solution concentration gradient on a plating layer is effectively eliminated.

The invention discloses a high-temperature-resistant radiation-resistant AlN-based piezoelectric coating material as well as a preparation method and application thereof, and relates to the technical field of ultrasonic piezoelectric coating materials. The preparation method of the piezoelectric coating material provided by the invention comprises the step of forming an AlScCrTaTiN piezoelectric coating on the surface of a substrate by adopting an AlScCrTaTi alloy target material through magnetron sputtering. By regulating and controlling the component proportion of the AlScCrTaTi alloy target material, it is guaranteed that the prepared coating has an AlN hexagonal structure, meanwhile, the proportion of the number of doped atoms of Al in the target material is not lower than 70%, and the component proportion of Sc, Cr, Ta and Ti is not lower than 5%; by controlling the volume ratio of argon to nitrogen, the temperature, the sputtering power, the deposition air pressure and the target-substrate distance in magnetron sputtering, the prepared AlN-based piezoelectric coating material has good mechanical properties, temperature resistance, corrosion resistance and radiation resistance, and provides guarantee for safe operation of advanced nuclear power gateways.

A two-dimensional (2D) material formed in a very thin layer improves the operation of the semiconductor element. However, forming contacts on a 2D material tends to damage and penetrate the 2D material. A relatively mild etching process has been developed that has very high selectivity to the 2D material and allows vertical holes to be etched down to the 2D material without damaging or penetrating the 2D material. When metal filling is performed, a low power deposition process forms a protective liner to further prevent damage to the 2D material when forming the metal contact in the hole. Such processes allow vertical metal contacts to be formed on a planar 2D material or vertical sidewall contacts to be formed in a 3D NAND without damaging the 2D material. This increases the contact area, reduces the contact resistance, and improves the performance of the 2D material in the element.

The application belongs to the field of magneto-optical materials, and particularly relates to a high-optical-value Ce-doped iron garnet magneto-optical film and a preparation method thereof. The application utilizes high laser power to excite a plasma plume with higher kinetic energy and ionization rate; provides additional energy for Ce ions to overcome the barrier to enter the dodecahedron site of the garnet lattice, thereby significantly improving the solid solubility of Ce 3+ valence state, to inhibit the precipitation of Fe elements and non-magnetic CeO2 and improve the proportion of Ce 3+ ions, thereby preparing a high-magneto-optical-optical-value Ce:RIG film on a silicon substrate. Compared with conventional low laser power deposition, the application solves the problems of precipitates and element valence state of the silicon-based polycrystalline magneto-optical film, and provides a new method for preparing a high-optical-value silicon-based Ce:YIG film.