7 results about "Power deposition" patented technology

Two-dimensional (2D) materials formed in very thin layers improve the performance of semiconductor devices. However, forming contacts on 2D materials tends to damage and penetrate the 2D material. Relatively gentle etching processes have been developed that are highly selective for 2D materials and allow etching of vertical holes into the 2D material without damaging or penetrating it. Low-power deposition processes form a protective liner when performing metal filling, further preventing damage to the 2D material when forming metal contacts within holes. These processes make it possible to form vertical metal contacts on planar 2D materials or vertical sidewall contacts within 3D NAND without damaging the 2D material. This increases the contact area, reduces contact resistance, and improves the performance of the 2D material in the device.

This invention provides a method for simulating and analyzing antenna power deposition efficiency and magnetic field, relating to the field of plasma engineering technology. The method includes: constructing a simulation model based on a helical antenna and plasma; constructing control equations for the simulation model; obtaining configuration information of the helical antenna and calculating corresponding physical field components based on the configuration information; the physical field includes wave magnetic field, wave electric field, and current density field; calculating physical field information at different locations based on the physical field components using the control equations; identifying the magnetic field information to generate helical wave components and TG wave components; analyzing the physical field information to obtain the influence law of performance indicators; and filtering the configuration information of the helical antenna based on the influence law of performance indicators to obtain a design scheme for the helical antenna as a plasma source, which can provide an effective ICP source design scheme.

This invention provides a method for preparing an AlScN piezoelectric coating material with high mechanical properties and high temperature resistance. The method includes: using an alloy target composed of Al and Sc, forming an AlScN piezoelectric functional layer on a substrate surface via magnetron sputtering; and controlling the volume ratio of argon to nitrogen, temperature, sputtering power, deposition pressure, and target-substrate distance during magnetron sputtering to allow the AlScN piezoelectric functional layer to grow in multiple orientations during deposition. The AlScN piezoelectric coating material obtained by this invention exhibits excellent mechanical properties, temperature resistance, and corrosion resistance. When deposited on a substrate, this coating material can simultaneously generate longitudinal waves, longitudinal and transverse waves, and transverse waves to achieve defect detection and stress measurement in steel plates, welds, and steel pipes in various media. Furthermore, it exhibits long-term stable service capability under high temperature and harsh operating conditions without the need for a protective layer, meeting long-term usage requirements, facilitating mass production, and possessing promising prospects for promotion and application.

A method of depositing a material layer on a substrate in a vacuum processing system is described. The method includes depositing a first portion of the material layer at a first deposition power to increase a temperature of the substrate to a first temperature; and depositing a second portion of the material layer at a second deposition power lower than the first deposition power, the second deposition power being configured to cause the substrate to be at about the first temperature or below until a final layer thickness of the material layer being reached.

This invention relates to the field of semiconductor packaging technology and discloses a manufacturing process for a redistribution structure in integrated circuit packaging, comprising: coating a dielectric polymer precursor on a substrate surface and heat-treating it to a semi-cured state, so that the initial crosslinking degree is in the range of 25% to 40%; sputtering a first metal seed layer with a power of 300W to 500W, using particle bombardment energy to induce a high crosslinking density surface layer in situ on the polymer surface, while constructing a complex bonding interface between the metal and polymer functional groups; subsequently increasing the power to 1500W to 2500W to deposit a second metal seed layer, using the high crosslinking density surface layer to block atomic penetration; and finally thermal curing. This invention effectively solves the polymer thermal damage caused by high-power deposition by constructing an in-situ shell formation mechanism in a semi-cured transient state, synergistically achieving adaptive relaxation of interface stress and hybrid enhancement of interlayer bonding force.

The invention provides a low-damage high-compactness cadmium telluride passive film and a preparation method and application thereof.The preparation method comprises the steps that multiple thin-layer CdTe films are deposited on the surface of a substrate material in a step-by-step magnetron sputtering mode, and every two adjacent thin-layer CdTe films are deposited through different sputtering powers, the CdTe passive film is obtained until the total thickness of the multiple thin CdTe films on the substrate material reaches the designed thickness of the CdTe passive film; wherein the sputtering power adopted for deposition of the thin CdTe film close to the substrate material does not exceed a threshold value causing damage to the surface of the substrate material. According to the method, the cadmium telluride passivation film is deposited through step-by-step magnetron sputtering with different powers, the problem that a large number of pores exist in the cadmium telluride passivation film prepared through traditional single sputtering power deposition is effectively solved, the high-compactness cadmium telluride passivation film can be obtained, low sputtering power is adopted when the design is close to a substrate material for magnetron sputtering deposition, and the high-compactness cadmium telluride passivation film is obtained. The problem that the surface of a substrate material is damaged due to fixed high-sputtering-power deposition in the sputtering deposition process of a traditional cadmium telluride passive film is solved.

The application belongs to the field of magneto-optical materials, and particularly relates to a high-optical-value Ce-doped iron garnet magneto-optical film and a preparation method thereof. The application utilizes high laser power to excite a plasma plume with higher kinetic energy and ionization rate; provides additional energy for Ce ions to overcome the barrier to enter the dodecahedron site of the garnet lattice, thereby significantly improving the solid solubility of Ce 3+ valence state, to inhibit the precipitation of Fe elements and non-magnetic CeO2 and improve the proportion of Ce 3+ ions, thereby preparing a high-magneto-optical-optical-value Ce:RIG film on a silicon substrate. Compared with conventional low laser power deposition, the application solves the problems of precipitates and element valence state of the silicon-based polycrystalline magneto-optical film, and provides a new method for preparing a high-optical-value silicon-based Ce:YIG film.