857 results about "High field" patented technology

A system and method have been provided for sorting information segments in a packet/cell earliest deadline first queue circuit. The invention permits information segments to be inserted at a rate that is twice as fast as the maximum extraction rate. Pairs of permanent and temporary registers are organized into a hierarchical sequence of stages. Generally, information segments with lower field ranks move systolically through the stages to temporary registers in higher sequence stages. Information segments with higher field ranks move systolically through the stages to permanent registers lower in the sequence of stages. The invention permits the highest rank information segments to be sorted and extracted with great efficiency.

A thin film electroluminescent (TFEL) phototherapy device based on high field electroluminescence (HFEL) or from organic light emitting devices (OLED), consistent with certain embodiments of the present invention has a battery and a charging circuit coupled to the battery, so that when connected to a source of current acts to charge the battery. A TFEL panel produces light when voltage from the power source (battery or AC source) is applied. A processor such as a microprocessor is used to control the application of voltage from the power source to the TFEL panel under control of a control program. A housing is used to contain the battery, the charging circuit and the processor and carry the TFEL panel on an outer surface thereof. In one embodiment, the housing incorporates a removable cover that uncovers a household electrical plug useful for supplying charging current to the charger. In use, a method of carrying out phototherapy, consistent with certain embodiments of the invention involves diagnosing a condition of an affected area of tissue that can be treated with phototherapy. A treatment protocol is determined including, for example, a treatment light intensity, a treatment time, a light modulation characteristic and a treatment light wavelength suitable for treating the condition. The affected area is then irradiated with light from the TFEL panel in accord with the treatment protocol.

A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

A magnetic nerve stimulator system is comprised of a core constructed from a material having a high field saturation with a coil winding. A thyrister capacitive discharge circuit pulses the device. A rapidly changing magnetic field is guided by the core, preferably vanadium permendur. For task specific excitation of various nerve groups, specially constructed cores allow for excitation of nerves at deeper levels with higher efficiency than is possible with air-core stimulators. Among the applications possible with this invention are treatment of incontinence, rehabilitation of large muscle groups in the leg and arm, and excitation of abdominal wall muscle groups to aid in weight loss and metabolic rate increase. A C-shape is employed for focussing the stimulation as desired.

There is provided a semiconductor device having a new structure which allows a high reliability and a high field effect mobility to be realized in the same time. In an insulated gate transistor having an SOI structure utilizing a mono-crystal semiconductor thin film on an insulating layer, pinning regions are formed at edge portions of a channel forming region. The pinning regions suppress a depletion layer from spreading from the drain side and prevent a short-channel effect. In the same time, they also function as a path for drawing out minority carriers generated by impact ionization to the outside and prevent a substrate floating effect from occurring.

High field-effect mobility is provided for a semiconductor device including an oxide semiconductor. Further, a highly reliable semiconductor device including the transistor is provided. In a transistor in which a stack of oxide semiconductor layers is provided over a gate electrode layer with a gate insulating layer provided therebetween, an oxide semiconductor layer functioning as a current path (channel) of the transistor and containing an n-type impurity is sandwiched between oxide semiconductor layers having lower conductivity than the oxide semiconductor layer. In the oxide semiconductor layer functioning as the channel, a region on the gate insulating layer side contains the n-type impurity at a higher concentration than a region on the back channel side. With such a structure, the channel can be separated from the interface between the oxide semiconductor stack and the insulating layer in contact with the oxide semiconductor stack, so that a buried channel can be formed.

The invention is applicable to the field of mobile terminals, and provides a mobile phone and an antenna thereof. The antenna comprises a first antenna branch, a second antenna branch, a third antenna branch, a first feed terminal, a second feed terminal, a third feed terminal and a phone metal ground, wherein the first, second and third antenna branches are sequentially arranged at one end of the mobile phone; the second antenna branch is positioned between the first and third antenna branches; the first feed terminal, the first antenna branch and the phone metal ground form a first antenna loop; the second feed terminal, the second antenna branch and the phone metal ground form a second antenna loop; the third feed terminal, the third antenna branch and the phone metal ground form a third antenna loop; through enabling all the antennal branches to be in the ground states, high fields are prevented from being tightly coupled through gaps among the antennas, so that even the three antennas are separated by about 1mm, mutual isolation among the three antennas also can be ensured, and thereby the three antennas respectively work normally.

A method, apparatus and system that employs particles, e.g., nanoparticles, and an electric or electro-magnetic field, to cause electroporation in target cells at reduced fields. Electroporation may be irreversible, leading to targeted cell death, or reversible, allowing species to be introduced into the target cell. The method introduces a particle to a position adjacent to the cell membrane of a target cell and exposes the target cell to a transient electromagnetic field for a time interval to cause targeted electroporation. A smaller electric field is applied, thereby surmounting similar methods. The particle enhances the effect of the electric field in its immediate vicinity, so reducing the field strength needed to achieve electroporation and thereby reducing the risk of damage to cells through high field exposure. Electroporation can be targeted to a subset of target cells by targeting the particles to surface markers on the target cell membrane.

High field-effect mobility is provided for a transistor including an oxide semiconductor. Further, a highly reliable semiconductor device including the transistor is provided. In a bottom-gate transistor including an oxide semiconductor layer, an oxide semiconductor layer functioning as a current path (channel) of the transistor is sandwiched between oxide semiconductor layers having lower carrier densities than the oxide semiconductor layer. In such a structure, the channel is formed away from the interface of the oxide semiconductor stacked layer with an insulating layer in contact with the oxide semiconductor stacked layer, i.e., a buried channel is formed.

An avalanche photodetector comprising a multiplication layer formed of a first material having a first polarization; the multiplication layer having a first electric field upon application of a bias voltage; an absorption layer formed of a second material having a second polarization forming an interface with the multiplication layer; the absorption layer having a second electric field upon application of the bias voltage, the second electric field being less than the first electric field or substantially zero, carriers created by light absorbed in the absorption layer being multiplied in the multiplication layer due to the first electric field; the absorption layer having a second polarization which is greater or less than the first polarization to thereby create an interface charge; the interface charge being positive when the first material predominately multiplies holes, the interface charge being negative when the first material predominately multiplies electrons, the change in electric field at the interface occurring abruptly at the atomic level; the interface charge creating electric field discontinuity causing first electric field to attain the breakdown field in the multiplication region and the second electric field to be low or zero in the absorption layer to thereby eliminate the need for a doped charge layer and the associated thickness of the doped charge layer required to transition from the low field to the high field. Also claimed is a method of making.

A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A single-component oxide semiconductor layer is formed over a substrate; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a single-component oxide semiconductor layer including single crystal regions is formed; and a multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

There is provided a semiconductor device having a novel structure in which high reliability and high field effect mobility can be simultaneously achieved. In an insulated gate transistor formed on a single crystal silicon substrate, pinning regions 105 and 106 are formed at the ends of a channel formation region 102. The pinning regions 105 and 106 suppress the expansion of a depletion layer from the drain side to prevent a short channel effect. In addition, they also serve as a path for extracting minority carriers generated as a result of impact ionization to prevent breakdown phenomena induced by carrier implantation.

A method for depositing uniform and smooth ferromagnetic thin films with high deposition-induced microstructural anisotropy includes a magnetic material deposited in two or more static oblique deposition steps from opposed directions to form a free layer having a high kink Hk, a high energy barrier to thermal reversal, a low critical current in spin-torque switching embodiments, and improved resistance to diffusion of material from adjacent layers in the device. Nonmagnetic layers deposited by the static oblique deposition technique may be used as seed layers for a ferromagnetic free layer or to generate other types of anisotropy determined by the deposition-induced microstructural anisotropy. Additional magnetic or non-magnetic layers may be deposited by conventional methods adjacent to oblique layer to provide magnetic coupling control, reduction of surface roughness, and barriers to diffusion from additional adjacent layers in the device.

A transverse rf saddle coil (30) for use in NMR is affixed in intimate thermal conract on one surface of a ceramic coilform (23) of high thermal conductivity. The probe is mostly for use with solid samples at high fields where the axis of the coilform is not alignedwith the main field. An orthogonal rf coil (1) is mounted in intimate thermal contact to the first saddle coil (30) via a ceramic spacer or coilform (2). The coilform is cooled by high-velocity gas flow and is also often associated with bearing exhaust gas from a high speed sample spinner. The two coils are tuned to different rf frequencies with circuits capable of supporting high rf currents. The rf coils (30, 1) may be magnetically compensated and expansion controlled, and passive geometric compensation of magnetic susceptibility effects from a sample spinner stator may also be incorporated. Novel coil mounting techniques, including metallurgical bonds to ceramics and capturing by dielectric clam-shells, are also disclosed.

The invention relates to an in-situ testing machine for the microcosmic performance for a multi-load and multi-physical-field coupling material, belonging to the technical field of material mechanics property testing. The in-situ testing machine comprises a micro/nanometer-precision driving/transmission module, a 'mechanical-electric-thermal-magnetic' loading module and a control module, is integrated with a high-field-depth 3D (three dimensional) micro-imaging lens, a Raman spectrometer and a visual in-situ monitoring module and is capable of dynamically monitoring deformational behaviors, damage mechanisms and performance evolvement rules of the material in a loading process. The in-situ testing machine has the advantages that the whole structure is compact, and the space layout is saved; the loads of four manners including 'stretching/compression-torsion-bending-indentation' can be singly loaded, two or more loads can be combined to be loaded as well, and externally-applied physical fields such as heat, electricity, magnetism and the like can be combined to maximally simulate the real working conditions of components of the material, and effective measures and methods are provided for testing the micromechanical performance of the material under a service-approximating condition.