2162 results about "Absorption layer" patented technology

The invention relates to the technical field of solar cells, and particularly provides a four-end laminated cell module, preparation thereof and a photovoltaic module. The four-end laminated battery assembly comprises a bottom battery pack and a perovskite battery pack, the perovskite battery pack comprises a plurality of perovskite sub-batteries, and each perovskite sub-battery comprises a first electrode layer, a first transmission layer, a perovskite light absorption layer, a second transmission layer and a second electrode layer which are stacked in sequence; the perovskite sub-cell further comprises a first groove penetrating through the first electrode layer, a second groove penetrating through the first transmission layer, the perovskite light absorption layer and the second transmission layer, and a third groove penetrating through the second electrode layer. The total width of the second trench and the third trench is 500-770 [mu] m. According to the technical scheme of the invention, the optical distribution can be adjusted, and the optical performance of the module can be improved.

The invention relates to a multi-layer composite black film and a preparation method thereof. The multi-layer composite black film is formed by sequentially stacking a base material layer, a multi-layer film system and a top covering layer, the multi-layer film system is formed by alternately stacking a plurality of absorption layers and a plurality of oxide layers, the number of the layers is 7-30, an initial layer is an oxide layer, the refractive indexes of the oxide layers are the same (1.4-1.5), the thickness ratio of the oxide layers to the absorption layers is larger than 2, and the thickness ratio of the top covering layer to the absorption layers is larger than 1. And the thicknesses of the two layers are increased and then reduced from the substrate layer to the top covering layer. A buffer layer with gradually changed oxygen content is arranged between the oxide layer and the absorption layer, and both the oxide layer and the top covering layer are made of silicon dioxide. The preparation method comprises the following steps: providing the substrate layer, alternately depositing the absorption layer and the oxide layer by using a magnetron sputtering or electron beam evaporation process to form a multilayer film system, then forming the top covering layer, controlling parameters such as vacuum degree, power, temperature and the like during deposition, and forming the buffer layer in the same cavity. The multilayer composite black film has the inner surface reflectivity of less than 1% and the appearance surface reflectivity of less than 5%, and is simple in structure and low in preparation cost.

The invention discloses a self-assembly material, a solar cell and electric equipment, the self-assembly material comprises a first self-assembly molecular material, the structural formula of the first self-assembly molecular material is # imgabs0 #, Ar represents an aryl group, the Ar comprises at least one coordination atom, the coordination atom comprises lone pair electrons which are not bonded, and the first self-assembly molecular material comprises a second self-assembly molecular material, a third self-assembly molecular material and a fourth self-assembly molecular material, the coordination atoms comprise one or more of phosphorus atoms, arsenic atoms, sulfur atoms and selenium atoms; l comprises one or more of a carbon-containing group, a nitrogen-containing group, an oxygen-containing group, a silicon-containing group, a phosphorus-containing group and a sulfur-containing group, and n is 0-10; a comprises a hydrophilic group. When the self-assembly material is used for passivating the light absorption layer of the solar cell, a better passivation effect can be realized, and the photoelectric conversion efficiency and the stability of the solar cell can be improved.

A photo-detecting apparatus is provided. The photo-detecting apparatus includes a carrier conducting layer having a first surface; an absorption region is doped with a first dopant having a first conductivity type and a first peak doping concentration, wherein the carrier conducting layer is doped with a second dopant having a second conductivity type and a second peak doping concentration, wherein the carrier conducting layer comprises a material different from a material of the absorption region, wherein the carrier conducting layer is in contact with the absorption region to form at least one heterointerface, wherein a ratio between the first peak doping concentration of the absorption region and the second peak doping concentration of the carrier conducting layer is equal to or greater than 10; and a first electrode and a second electrode both formed over the first surface of the carrier conducting layer.

The embodiment of the invention provides a perovskite solar cell, a preparation method thereof and a perovskite solar cell module. The perovskite solar cell comprises a substrate and a transparent conductive oxide layer, wherein the transparent conductive oxide layer is provided with a plurality of first regions and second regions which are arranged in a staggered manner; a first etching groove is formed in the transparent conductive oxide layer in the first region; the insulating protection layer is positioned in the first region; the first charge transport layer, the perovskite light absorption layer and the second charge transport layer are located in the second region; the second etching groove is positioned in the insulating protection layer; the electrode layer is positioned on the second charge transmission layer and the insulation protection layer and in the second etching groove; and the third etching groove is positioned in the electrode layer of the first region. According to the technical scheme of the invention, the insulation protection layer in the perovskite solar cell can protect the perovskite light absorption layer, reduces the damage of laser scribing to the perovskite light absorption layer, and improves the stability of a perovskite solar cell module.

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

An optical detector system providing electrical output signals. The system includes an apertured surface and a transparent window, with a metasurface on the window's opposite side. The metasurface imparts spatially varying phase delay and / or amplitude or polarization modulation to deflect ILR based on their angle of incidence, producing exiting light rays. These rays are detected by a two-dimensional tetralateral position-sensing detector (TLD) with a single resistive photo-absorption layer and four electrodes. The TLD generates X-Y position signals proportional to the azimuth and elevation of the incoming ILR. A computer may be included to calculate these angular values from the position signals.

The invention belongs to the technical field of solar cells, and particularly relates to a fluorinated biguanide salt synergistically passivated perovskite solar cell and a preparation method thereof. The method comprises the following steps: S1, coating the surface of a perovskite light absorption layer with a fluorinated biguanide hydrochloride solution to form a synergistic layer; coating the surface of the synergistic layer with a halogenated phenylethylamine solution to form a synergistic passivation layer; and S2, arranging an electron transport layer and a hole blocking layer on the surface of the passivation layer. According to the invention, the synergistic passivation layer is introduced in the preparation process of the perovskite solar cell. The introduction of the fluorinated biguanide salt passivation layer can modify the perovskite crystal and generate the low-dimensional perovskite at the crystal boundary, and the second passivation layer can interact with the low-dimensional perovskite structure, thereby further protecting the perovskite film, improving the interface of the perovskite light absorption layer and the electron transport layer, and improving the short-circuit current density, open-circuit voltage and cell efficiency of the cell.

The invention provides a method for improving the efficiency of a perovskite solar cell, and relates to the technical field of solar cells, the cell structure sequentially comprises a bottom substrate, a transparent electrode, a hole transport layer, a perovskite light absorption layer, an interface modification layer, an electron transport layer, a buffer layer and a metal electrode from bottom to top; a new additive 4-(2-aminoethyl) benzenesulfonic acid hydrochloride is introduced into the perovskite light absorption layer, the additive is introduced into the perovskite light absorption layer by being dissolved in a perovskite precursor solution, and the dosage of the additive is 0.1-1.5 mg / mL. Based on the method, the defect density of shallow energy level and deep energy level of perovskite is reduced, a more intrinsic perovskite absorption layer is formed through induction, balance extraction of electrons and holes is promoted, and then the open-circuit voltage and efficiency of the solar cell are remarkably improved.

The invention provides a temperature control system of an electrostatic adsorption disc and an improvement method of temperature control performance. According to the system, a temperature control layer is arranged in an electrostatic adsorption disc, and the temperature control layer comprises a graphite heat absorption layer and a graphene heat conduction layer; the system further comprises a laser generator and a controller. During working, the laser generator emits heating laser to the graphite heat absorption layer, so that the graphite heat absorption layer efficiently absorbs energy to generate heat, and then the heat is quickly and uniformly conducted to the surface of the electrostatic adsorption disc through the graphene heat conduction layer with ultrahigh heat conductivity. Laser heating is used for replacing traditional resistance heating, graphene heat conduction is used for replacing traditional metal heat conduction, the method has the advantages of being high in temperature switching speed, high in control precision, good in temperature uniformity and the like, and the temperature control performance of the electrostatic adsorption disc can be remarkably improved.

The invention belongs to the technical field of solar cells, and relates to a perovskite laminated cell and a preparation method thereof, the perovskite laminated cell can reduce light parasitic absorption, the perovskite laminated cell comprises a bottom crystalline silicon cell, the bottom crystalline silicon cell comprises a substrate, the substrate comprises a first surface and a second surface which are opposite to each other, a first tunneling oxide layer and a first composite passivation layer are sequentially arranged on the first surface in the direction perpendicular to and away from the first surface, and the first composite passivation layer comprises first doped crystalline silicon conductive regions and first wide-band gap conductive regions which are alternately arranged in the direction parallel to the first surface; the top perovskite cell is arranged on the first composite passivation layer and is electrically connected with the bottom crystalline silicon cell, and the top perovskite cell comprises a hole transport layer, a perovskite active absorption layer, an electron transport layer, an interface buffer layer, a transparent conductive layer and an anti-reflection layer which are sequentially far away from the first composite passivation layer; and a first electrode in electrical contact with the transparent conductive layer.

The invention discloses a microstructure silicon carbide ultraviolet photoelectric detector with high quantum efficiency and a preparation method thereof, and belongs to the technical field of ultraviolet photoelectric detection. The detector adopts a bottom-to-top structural design and comprises a silicon carbide highly-doped n + type substrate, an n type buffer layer, a low-doped n-type absorption layer, a low-doped p-type absorption layer (containing a microstructure), an annular highly-doped p + type ohmic contact layer and a passivation isolation layer. Reverse bias voltage is applied to the p + type ohmic contact electrode to form a depletion electric field, and the microstructure promotes the p-i-n structure electric fields to be mutually connected and coupled, so that the photon-generated carrier depletion efficiency is improved, and the responsivity of the device and the external quantum efficiency are enhanced. And meanwhile, the microstructure enables a short-wave ultraviolet signal to directly penetrate through the p-type absorption layer to enter the internal absorption layer, so that photon-generated carrier recombination caused by surface defects of the p + type ohmic contact layer is avoided, the collection efficiency of photon-generated carriers is improved, and ultraviolet full-band detection is realized.

The invention discloses a solar cell module, a preparation method, electric equipment and power generation equipment, the solar cell module comprises a hole transport layer, a light absorption layer and a passivation layer, the hole transport layer comprises a first hole transport layer and a second hole transport layer, and the second hole transport layer is provided with a plurality of pores; the surface, close to the second hole transport layer, of the passivation layer is at least partially embedded in the pores of the second hole transport layer, and the surface, away from the second hole transport layer, of the passivation layer is uneven. According to the embodiment of the invention, good hole transport efficiency is provided through the first hole transport layer; the contact area between the second hole transport layer and the light absorption layer is increased through the second hole transport layer with a plurality of pores, and the hole extraction rate is improved; the hole transmission efficiency is improved through the passivation layer; the hole transport layer and the passivation layer are cooperatively used, so that the device performance of the corresponding solar cell module is improved.

The invention discloses a heat dissipation module and an optical machine, and relates to the technical field of optical machine manufacturing, the heat dissipation module comprises a heat conduction part, a semiconductor refrigeration part, a control assembly and a water absorption layer, the heat conduction part comprises a heat conduction plate and an extension section arranged on the heat conduction plate, the semiconductor refrigeration part comprises a first surface and a second surface which are oppositely arranged, and the first surface is attached to the heat conduction plate; the control assembly comprises a control panel and a chip installed on the control panel, the control panel is provided with a first through hole, and the water absorption layer is provided with a second through hole; the chip, the control panel, the water absorption layer, the heat conduction plate and the semiconductor refrigeration piece are arranged in sequence, and the extending section sequentially penetrates through the second through hole and the first through hole to be connected with the chip. The heat dissipation module has the advantage that the failure risk of an optical machine can be reduced.

The invention belongs to the technical field of endoscope lens coating, and particularly relates to a lens shading film and a preparation method and application thereof. The lens shading film provided by the invention comprises a light absorbing layer, a reflecting layer and an insulating layer which are sequentially stacked, and the light absorbing layer is in contact with a lens substrate; the material of the light absorption layer comprises chromium and / or titanium; the reflecting layer is made of aluminum and / or silver; and the material of the insulating layer comprises silicon dioxide and / or silicon nitride. Through the synergistic effect of the light absorbing layer and the reflecting layer, the shading performance of the shading film is remarkably improved; meanwhile, the lens shading film provided by the invention is good in uniformity, so that the optical performance of the lens is not influenced. In conclusion, the coating of the lens shading film provided by the invention is compact and uniform and can reach over OD2, and the average transmittance in a visible light range has a shading effect of less than 0.5%.

The embodiment of the invention provides a display mother board and a preparation method thereof, a preparation method of a display panel and a display device, and relates to the technical field of display, the display mother board comprises a substrate, a pixel defining layer, a light emitting unit, an alignment mark and a light absorption layer; the pixel defining layer is located on one side of the substrate, a pixel opening is defined by the pixel defining layer, and at least part of the light-emitting unit is located in the pixel opening; the alignment mark is located in the substrate and / or on the substrate; the light absorption layer is located on the side, away from the substrate, of the alignment mark and covers at least part of the alignment mark. According to the display mother set, the color difference between the alignment mark and the alignment mark on the mask can be larger, so that the alignment between the alignment mark and the alignment mark on the mask can be more accurate, and the quality of the display mother set can be improved.

The invention provides a PACl modified perovskite light absorption layer, a PACl modified perovskite solar cell and a method, the PACl modified perovskite light absorption layer comprises a perovskite precursor solution composed of a (FA < 0.95 > MA < 0.05 >) < 0.95 > Cs0 < 0.05 > Pb < I < 0.95 > Br < 0.05 >) < 3 > perovskite material and a PACl passivation material, and the PACl modified perovskite light absorption layer is obtained through spin coating and annealing of the perovskite precursor solution. According to the invention, n-propyl ammonium chloride PACl is added into the perovskite precursor solution to modify perovskite, so that the defects in the perovskite material are significantly reduced, and the efficiency of the perovskite solar cell is improved.

The invention discloses a stress balance InP-InGaAs avalanche photodetector and a preparation method thereof. An n-type InP buffer layer, an unintentionally doped In < 0.53 > Ga < 0.47 > As bottom absorption layer, a plurality of groups of unintentionally doped stress matching InGaAs absorption layers, an unintentionally doped In < 0.53 > Ga < 0.47 > As top absorption layer, an n-type InP charge layer and an unintentionally doped InP cover layer are sequentially grown on an n-type InP substrate; the optimal photosensitive wavelength of the avalanche photodetector is 2.0 microns, and the device can stably work at room temperature at low dark current.

A photodiode includes a substrate, a rectifying layer, a buffer layer, a transition layer, an active layer, and an absorption layer. The substrate has a base lattice constant. The rectifying layer is formed on the substrate, and includes an InGaP layer, an AlGaAs layer, and an InGaAs layer which are stacked on the substrate in that order. The rectifying layer includes a connecting layer that is made of GaAs directly formed on one of the InGaP layer and the InGaAs layer. The buffer layer is made of GaAs and stacked on the rectifying layer. The transition layer is formed on the buffer layer, and includes a plurality of sub-layers that each has a lattice constant greater than the base constant but smaller than a designated constant. The active layer is formed on the transition layer and has the designated constant. The absorption layer is formed on the active layer.

The invention relates to a high-speed low-dark-current three-step structure avalanche photodetector and a preparation method thereof, and belongs to the technical field of semiconductor devices. Comprising an intrinsic InP substrate, an N-type InAlAs ohmic contact layer, an intrinsic InAlAs transition layer, an N-type InAlAs charge layer, an intrinsic InAlAs multiplication layer, a P-type InAlAs charge layer, an intrinsic InAlGaAs transition layer, an intrinsic InGaAs absorption layer, a gradient-doped P-type InGaAs absorption layer and a P-type InAlAs ohmic contact layer which are stacked from bottom to top. The intrinsic InGaAs absorption layer 8 and the N-type InAlAs ohmic contact layer 2 are both of a step structure so as to form a three-stage step structure of the photoelectric detector. According to the invention, through growing the SiNx antireflection film with the refractive index of 1.85 and the thickness of 210 nm on the light incident surface, the reflectivity of incident light can be less than 1%. For an optical signal with the wavelength of 1550 nm, the single light absorption quantum efficiency can reach 0.45.

The invention belongs to the technical field of nickel-based single-crystal superalloy materials, and provides a nickel-based single-crystal superalloy and a strengthening method thereof, and the method comprises the following steps: cleaning and drying the nickel-based single-crystal superalloy to be strengthened; strengthening parameters and a shock strengthening path are set, and the nickel-based single crystal high-temperature alloy is subjected to absorption-layer-free laser shock strengthening; the strengthened nickel-based single crystal high-temperature alloy is cleaned and dried; polishing parameters and a polishing path are set, femtosecond laser oblique incidence polishing is conducted on the strengthened area of the nickel-based single crystal superalloy, and surface ablation is removed; the polished nickel-based single crystal high-temperature alloy is cleaned and dried; according to the method, the nickel-based single crystal superalloy is strengthened by adopting an absorption-layer-free laser shock strengthening mode, and femtosecond laser oblique incidence polishing is adopted, so that the procedures of pasting and removing an absorption layer for multiple times are avoided, the processing efficiency of laser shock strengthening is improved, and deterioration of the surface quality of a material caused by laser ablation is avoided.

The invention relates to (i) a photovoltaic cell, comprising: an absorber layer comprising a perovskite material; and an ultrathin hole-transport layer; (ii) a photovoltaic cell comprising an absorber layer comprising perovskite material, a 5 hole transport layer and a protective layer located between the absorber layer and the hole transport layer, the protective layer having a valence band with an energy level that is between the energy levels of the valence bands of the absorber layer and the hole transport layer; and (iii) a photovoltaic cell comprising a barrier layer located between inner cell layers and an electrode and configured to suppress 0 diffusion of metal from the electrode into the inner layers. Also disclosed are methods of fabricating said photovoltaic cells and methods of fabricating a doped precursor for use in fabricating a photovoltaic cell.

The invention relates to the technical field of infrared sensors, in particular to a monolithic integrated MEMS out-of-plane thermopile chip and a preparation method thereof, and the thermopile chip comprises a substrate, and a bottom electrode, a thermocouple array, a top electrode and an optical radiation absorption layer which are sequentially arranged on the substrate; the thermocouple array is vertically arranged on the bottom electrode; the thermocouple array comprises a plurality of thermocouple pairs, and each thermocouple pair comprises an N-type thermocouple and a P-type thermocouple; the N-type thermocouple and the P-type thermocouple form a current and heat flow loop in an electric series connection and heat parallel connection mode. According to the invention, the bismuth telluride-based thermoelectric material with low thermal conductivity and high Seebeck coefficient difference is used as the thermocouple material of the out-of-plane thermopile chip, the heat conduction path of the out-of-plane thermopile chip is more direct, the temperature difference in the vertical direction can be directly utilized, and the higher response speed and high sensitivity are expected to be realized due to the more efficient thermal gradient.

The invention discloses a preparation method for effectively reducing defects of a perovskite solar cell body. A 4-fluorobenzenesulfonamide additive is introduced into a perovskite precursor solution, a sulfonyl group, a fluorine group and the like are coordinated with lead in perovskite, the crystallization process of the film is regulated and controlled, nucleation and crystal growth of an organic lead halide perovskite light absorption layer are effectively controlled, meanwhile, non-radiative recombination is inhibited, charge transfer is promoted, and the photoelectric conversion efficiency is improved. The photoelectric conversion efficiency is obviously improved, the cost is reduced and the repeatability is good. The additive is introduced by a solution method, the process is simple and the cost is low. Experimental results show that after the 4-fluorobenzenesulfonamide additive is used, the trap state density of a perovskite layer is reduced from 4.45 * 10 < 15 > cm <-3 > to 3.26 * 10 < 15 > cm <-3 >, and the photoelectric conversion efficiency of a perovskite cell is improved from 22.20% to 24.15%. The invention provides an efficient and low-cost solution for defect passivation of the perovskite solar cell.

The invention discloses a fano resonance-based color radiation refrigeration film and a preparation method thereof, the film comprises a structure M1D1M2D1AD 'which are sequentially stacked from bottom to top, the structure of the film is an asymmetric structure, M1 represents a first metal layer, M2 represents a second metal layer, A represents an absorption layer, D1 represents a first dielectric layer, and D' represents a symmetrical dielectric layer unit of a film material; the M1D1M2 structure is in a discrete state and serves as a narrow-band light absorber, the M2D1AD'structure is in a continuous state and serves as a broadband light absorber, D 'serves as an antireflection layer in a continuous state, and the narrow-band light absorber and the broadband light absorber are coupled by sharing the second metal layer M2 to achieve fano resonance. The high-purity and color-adjustable reflection type structural color is achieved, the high reflectivity is achieved in the solar spectrum wave band, the high emissivity is achieved in the atmosphere window, and therefore the excellent radiation refrigeration effect is achieved.

The present invention provides a method for manufacturing a non-linear optical laminate comprising a target substrate and an electro-optical polymer layer located on the target substrate, the method comprising, in the following order: a first step for preparing a first laminate in which a support substrate, a light absorption layer, a first electrode, an electro-optical polymer layer, and a second electrode are laminated in this order; a second step for performing polling processing on the electro-optical polymer layer of the first laminate; a third step for obtaining a second laminate by removing the second electrode from the first laminate; a fourth step for obtaining a third laminate by laminating the target substrate on a surface, which was in contact with the second electrode, of the second laminate; a fifth step for obtaining a fourth laminate by removing the support substrate from the third laminate by laser-peeling the support substrate; and a sixth step for obtaining the non-linear optical laminate by removing the light absorption layer and the first electrode from the fourth laminate.

A method of manufacturing a CdTe-based thin film solar cell device having a graded refractive index profile within a CdTe (cadmium telluride)-based absorber layer, comprising the steps of: a) providing a transparent substrate comprising a front electrode, b) forming a doped CdTe-based absorber layer on the substrate, c) performing an activation treatment after step b). The doped CdTe-based absorber layer in step b) is a doped CdTe-based absorber layer stack comprising a first layer and a second layer. The first layer is a first doping element-containing layer including vanadium as a first doping element, which is formed by depositing a first doping element-enriched layer followed by depositing a CdSe (cadmium selenide) layer or a CdSeTe (cadmium selenium telluride) layer, or by depositing a CdSe layer or a CdSeTe layer each doped with a first doping element. The second layer is formed by depositing a CdTe layer. The invention also relates to a CdTe-based thin-film solar cell device with gradient refractive index distribution.

The invention discloses a cascade avalanche multiplication photodiode, wherein a substrate oxide layer is provided on a substrate, and a p-type electrode layer I, a p-type light absorption layer, an electric field regulation layer I, an avalanche multiplication layer I, an n-type transition layer, an electron traveling layer with a low impurity concentration, an electric field regulation layer II, an avalanche multiplication layer II, and an n-type electrode layer are provided on the substrate oxide layer from left to right, wherein the p-type electrode layer II is embedded in the electron traveling layer region with a low impurity concentration, and each layer arranged in sequence on the substrate oxide layer is surrounded by an electric field isolation ring layer, and an intrinsic layer is provided in the outer region of the electric field isolation ring layer, and a p-electrode I is provided on the p-type electrode layer I, a p-electrode II is provided on the p-type electrode layer II, and an n-electrode is provided on the n-type electrode layer. The advantages of the patent are that the structure of the invention avoids the curvature effect, eliminates edge breakdown, improves stability, and realizes multi-stage cascade avalanche multiplication monolithic integration at the same time, obtains a very high stable gain, and effectively suppresses the noise caused by hole avalanches.

An optical semiconductor chip of the present disclosure includes a high frequency line between an electrode pad receiving a modulation signal and a modulation electrode on the optical waveguide having a light absorption layer. The depletion layer capacitance generated in the light absorption layer is canceled by an inductor component of the high frequency line. When a portion directly below the high frequency line is embedded with a low-dielectric-constant material or is made hollow, the parasitic capacitance is further reduced. The high frequency line may have a zigzag shape as well as a linear shape. The electrode pad on the optical semiconductor chip can be connected to other substrates including RF lines for modulation signal input by bumps or wire bonding.

The invention provides a Si-based InGaAs photoelectric detector and a preparation method thereof. The Si-based InGaAs photoelectric detector comprises a Ge transition layer, a GaAs transition layer and a non-doped InP buffer layer, wherein the Ge transition layer, the GaAs transition layer and the non-doped InP buffer layer sequentially grow on the surface of a silicon substrate; the lower doped InP layer, the non-doped InGaAs absorption layer and the upper doped InP layer are sequentially grown on the surface of the non-doped InP buffer layer. The Si-based Ge epitaxial layer, the Ge-based GaAs epitaxial layer and the GaAs-based InP epitaxial layer which are mature in process are sequentially inserted between the Si substrate and the III-V group heteroepitaxial thin film, the crystal structure type difference of direct epitaxial growth of InGaAs on Si is eliminated, the lattice constant mismatch degree is reduced, the defects of the InGaAs epitaxial layer are reduced, the quality is improved, and a high-performance detector is better prepared.