1685 results about "Absorption layer" patented technology

The invention relates to the technical field of solar cells, and particularly provides a four-end laminated cell module, preparation thereof and a photovoltaic module. The four-end laminated battery assembly comprises a bottom battery pack and a perovskite battery pack, the perovskite battery pack comprises a plurality of perovskite sub-batteries, and each perovskite sub-battery comprises a first electrode layer, a first transmission layer, a perovskite light absorption layer, a second transmission layer and a second electrode layer which are stacked in sequence; the perovskite sub-cell further comprises a first groove penetrating through the first electrode layer, a second groove penetrating through the first transmission layer, the perovskite light absorption layer and the second transmission layer, and a third groove penetrating through the second electrode layer. The total width of the second trench and the third trench is 500-770 [mu] m. According to the technical scheme of the invention, the optical distribution can be adjusted, and the optical performance of the module can be improved.

The invention relates to a multi-layer composite black film and a preparation method thereof. The multi-layer composite black film is formed by sequentially stacking a base material layer, a multi-layer film system and a top covering layer, the multi-layer film system is formed by alternately stacking a plurality of absorption layers and a plurality of oxide layers, the number of the layers is 7-30, an initial layer is an oxide layer, the refractive indexes of the oxide layers are the same (1.4-1.5), the thickness ratio of the oxide layers to the absorption layers is larger than 2, and the thickness ratio of the top covering layer to the absorption layers is larger than 1. And the thicknesses of the two layers are increased and then reduced from the substrate layer to the top covering layer. A buffer layer with gradually changed oxygen content is arranged between the oxide layer and the absorption layer, and both the oxide layer and the top covering layer are made of silicon dioxide. The preparation method comprises the following steps: providing the substrate layer, alternately depositing the absorption layer and the oxide layer by using a magnetron sputtering or electron beam evaporation process to form a multilayer film system, then forming the top covering layer, controlling parameters such as vacuum degree, power, temperature and the like during deposition, and forming the buffer layer in the same cavity. The multilayer composite black film has the inner surface reflectivity of less than 1% and the appearance surface reflectivity of less than 5%, and is simple in structure and low in preparation cost.

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

An optical detector system providing electrical output signals. The system includes an apertured surface and a transparent window, with a metasurface on the window's opposite side. The metasurface imparts spatially varying phase delay and / or amplitude or polarization modulation to deflect ILR based on their angle of incidence, producing exiting light rays. These rays are detected by a two-dimensional tetralateral position-sensing detector (TLD) with a single resistive photo-absorption layer and four electrodes. The TLD generates X-Y position signals proportional to the azimuth and elevation of the incoming ILR. A computer may be included to calculate these angular values from the position signals.

The invention provides a temperature control system of an electrostatic adsorption disc and an improvement method of temperature control performance. According to the system, a temperature control layer is arranged in an electrostatic adsorption disc, and the temperature control layer comprises a graphite heat absorption layer and a graphene heat conduction layer; the system further comprises a laser generator and a controller. During working, the laser generator emits heating laser to the graphite heat absorption layer, so that the graphite heat absorption layer efficiently absorbs energy to generate heat, and then the heat is quickly and uniformly conducted to the surface of the electrostatic adsorption disc through the graphene heat conduction layer with ultrahigh heat conductivity. Laser heating is used for replacing traditional resistance heating, graphene heat conduction is used for replacing traditional metal heat conduction, the method has the advantages of being high in temperature switching speed, high in control precision, good in temperature uniformity and the like, and the temperature control performance of the electrostatic adsorption disc can be remarkably improved.

The invention belongs to the technical field of solar cells, and relates to a perovskite laminated cell and a preparation method thereof, the perovskite laminated cell can reduce light parasitic absorption, the perovskite laminated cell comprises a bottom crystalline silicon cell, the bottom crystalline silicon cell comprises a substrate, the substrate comprises a first surface and a second surface which are opposite to each other, a first tunneling oxide layer and a first composite passivation layer are sequentially arranged on the first surface in the direction perpendicular to and away from the first surface, and the first composite passivation layer comprises first doped crystalline silicon conductive regions and first wide-band gap conductive regions which are alternately arranged in the direction parallel to the first surface; the top perovskite cell is arranged on the first composite passivation layer and is electrically connected with the bottom crystalline silicon cell, and the top perovskite cell comprises a hole transport layer, a perovskite active absorption layer, an electron transport layer, an interface buffer layer, a transparent conductive layer and an anti-reflection layer which are sequentially far away from the first composite passivation layer; and a first electrode in electrical contact with the transparent conductive layer.

The invention discloses a solar cell module, a preparation method, electric equipment and power generation equipment, the solar cell module comprises a hole transport layer, a light absorption layer and a passivation layer, the hole transport layer comprises a first hole transport layer and a second hole transport layer, and the second hole transport layer is provided with a plurality of pores; the surface, close to the second hole transport layer, of the passivation layer is at least partially embedded in the pores of the second hole transport layer, and the surface, away from the second hole transport layer, of the passivation layer is uneven. According to the embodiment of the invention, good hole transport efficiency is provided through the first hole transport layer; the contact area between the second hole transport layer and the light absorption layer is increased through the second hole transport layer with a plurality of pores, and the hole extraction rate is improved; the hole transmission efficiency is improved through the passivation layer; the hole transport layer and the passivation layer are cooperatively used, so that the device performance of the corresponding solar cell module is improved.

The invention discloses a heat dissipation module and an optical machine, and relates to the technical field of optical machine manufacturing, the heat dissipation module comprises a heat conduction part, a semiconductor refrigeration part, a control assembly and a water absorption layer, the heat conduction part comprises a heat conduction plate and an extension section arranged on the heat conduction plate, the semiconductor refrigeration part comprises a first surface and a second surface which are oppositely arranged, and the first surface is attached to the heat conduction plate; the control assembly comprises a control panel and a chip installed on the control panel, the control panel is provided with a first through hole, and the water absorption layer is provided with a second through hole; the chip, the control panel, the water absorption layer, the heat conduction plate and the semiconductor refrigeration piece are arranged in sequence, and the extending section sequentially penetrates through the second through hole and the first through hole to be connected with the chip. The heat dissipation module has the advantage that the failure risk of an optical machine can be reduced.

The invention discloses a stress balance InP-InGaAs avalanche photodetector and a preparation method thereof. An n-type InP buffer layer, an unintentionally doped In < 0.53 > Ga < 0.47 > As bottom absorption layer, a plurality of groups of unintentionally doped stress matching InGaAs absorption layers, an unintentionally doped In < 0.53 > Ga < 0.47 > As top absorption layer, an n-type InP charge layer and an unintentionally doped InP cover layer are sequentially grown on an n-type InP substrate; the optimal photosensitive wavelength of the avalanche photodetector is 2.0 microns, and the device can stably work at room temperature at low dark current.

The invention belongs to the technical field of nickel-based single-crystal superalloy materials, and provides a nickel-based single-crystal superalloy and a strengthening method thereof, and the method comprises the following steps: cleaning and drying the nickel-based single-crystal superalloy to be strengthened; strengthening parameters and a shock strengthening path are set, and the nickel-based single crystal high-temperature alloy is subjected to absorption-layer-free laser shock strengthening; the strengthened nickel-based single crystal high-temperature alloy is cleaned and dried; polishing parameters and a polishing path are set, femtosecond laser oblique incidence polishing is conducted on the strengthened area of the nickel-based single crystal superalloy, and surface ablation is removed; the polished nickel-based single crystal high-temperature alloy is cleaned and dried; according to the method, the nickel-based single crystal superalloy is strengthened by adopting an absorption-layer-free laser shock strengthening mode, and femtosecond laser oblique incidence polishing is adopted, so that the procedures of pasting and removing an absorption layer for multiple times are avoided, the processing efficiency of laser shock strengthening is improved, and deterioration of the surface quality of a material caused by laser ablation is avoided.

The invention relates to the technical field of infrared sensors, in particular to a monolithic integrated MEMS out-of-plane thermopile chip and a preparation method thereof, and the thermopile chip comprises a substrate, and a bottom electrode, a thermocouple array, a top electrode and an optical radiation absorption layer which are sequentially arranged on the substrate; the thermocouple array is vertically arranged on the bottom electrode; the thermocouple array comprises a plurality of thermocouple pairs, and each thermocouple pair comprises an N-type thermocouple and a P-type thermocouple; the N-type thermocouple and the P-type thermocouple form a current and heat flow loop in an electric series connection and heat parallel connection mode. According to the invention, the bismuth telluride-based thermoelectric material with low thermal conductivity and high Seebeck coefficient difference is used as the thermocouple material of the out-of-plane thermopile chip, the heat conduction path of the out-of-plane thermopile chip is more direct, the temperature difference in the vertical direction can be directly utilized, and the higher response speed and high sensitivity are expected to be realized due to the more efficient thermal gradient.

The present invention provides a method for manufacturing a non-linear optical laminate comprising a target substrate and an electro-optical polymer layer located on the target substrate, the method comprising, in the following order: a first step for preparing a first laminate in which a support substrate, a light absorption layer, a first electrode, an electro-optical polymer layer, and a second electrode are laminated in this order; a second step for performing polling processing on the electro-optical polymer layer of the first laminate; a third step for obtaining a second laminate by removing the second electrode from the first laminate; a fourth step for obtaining a third laminate by laminating the target substrate on a surface, which was in contact with the second electrode, of the second laminate; a fifth step for obtaining a fourth laminate by removing the support substrate from the third laminate by laser-peeling the support substrate; and a sixth step for obtaining the non-linear optical laminate by removing the light absorption layer and the first electrode from the fourth laminate.

The invention provides a Si-based InGaAs photoelectric detector and a preparation method thereof. The Si-based InGaAs photoelectric detector comprises a Ge transition layer, a GaAs transition layer and a non-doped InP buffer layer, wherein the Ge transition layer, the GaAs transition layer and the non-doped InP buffer layer sequentially grow on the surface of a silicon substrate; the lower doped InP layer, the non-doped InGaAs absorption layer and the upper doped InP layer are sequentially grown on the surface of the non-doped InP buffer layer. The Si-based Ge epitaxial layer, the Ge-based GaAs epitaxial layer and the GaAs-based InP epitaxial layer which are mature in process are sequentially inserted between the Si substrate and the III-V group heteroepitaxial thin film, the crystal structure type difference of direct epitaxial growth of InGaAs on Si is eliminated, the lattice constant mismatch degree is reduced, the defects of the InGaAs epitaxial layer are reduced, the quality is improved, and a high-performance detector is better prepared.

A photovoltaic device is presented. The photovoltaic device includes a layer stack; and an absorber layer is disposed on the layer stack. The absorber layer comprises selenium, wherein an atomic concentration of selenium varies across a thickness of the absorber layer. The photovoltaic device is substantially free of a cadmium sulfide layer.

The invention provides a perovskite absorption layer and a preparation method thereof, and a polyion liquid-ion liquid synergistically modified perovskite solar cell, belongs to the technical field of solar cells, and aims to solve the problems of bulk phase and interface defects of the perovskite solar cell. The preparation method of the perovskite absorption layer comprises the following steps: dispersing and dissolving a perovskite precursor, polyionic liquid and ionic liquid into an organic solvent to prepare a perovskite precursor solution; and spin-coating the perovskite precursor solution to form a film, and annealing to obtain the perovskite absorption layer. According to the invention, polyionic liquid (PIL) and ionic liquid (IL) are preferably and synergistically added into a single-junction or multi-junction photovoltaic cell containing perovskite junctions, so that dual passivation of bulk phase and interface defects is realized; and the film uniformity and the photoelectric efficiency are improved.

Provided in the present application are a photovoltaic module and a preparation method therefor, an electrical device, a power generation device and a photovoltaic system. The photovoltaic module comprises a photovoltaic cell, a buffer layer and a busbar, wherein the photovoltaic cell comprises a light absorption layer and a back electrode layer which are stacked; the buffer layer is located on the side of the back electrode layer that is away from the light absorption layer; the busbar comprises a connecting portion and a main body portion, wherein one end of the connecting portion is connected to the back electrode layer, the other end of the connecting portion is connected to the main body portion, and the main body portion is arranged on the side of the buffer layer that is away from the back electrode layer. In the photovoltaic module, the stress of the light absorption layer in a lamination or use process can be buffered by means of the arrangement of the buffer layer, thereby reducing the risk of damage to the light absorption layer during the lamination or use process, and then improving the photoelectric conversion efficiency of the photovoltaic module.

The embodiment of the present disclosure provides an optical transceiver and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a substrate, wherein the substrate comprises a substrate, a buried oxygen layer and a lithium niobate layer which are sequentially stacked; the substrate comprises a light modulation area and a light detection area; etching the lithium niobate layer located in the light modulation area to form a thin film lithium niobate waveguide; removing the lithium niobate layer and part of the buried oxygen layer located in the light detection area to form a groove; the bottom of the groove exposes the substrate; forming a light absorption layer in the groove; wherein the thin film lithium niobate waveguide is used for modulating an optical signal and outputting the modulated optical signal; and the light absorption layer is used for detecting the modulated optical signal and converting the modulated optical signal into an electrical signal.

The invention provides a silicon carbide single-photon detector and a preparation method thereof, and relates to the technical field of silicon carbide solar blind detection. The silicon carbide multiplication layer and the aluminum gallium nitrogen absorption layer of different material systems are sequentially grown on the silicon carbide substrate, and the side, far away from the silicon carbide substrate, of the aluminum gallium nitrogen absorption layer is the light incidence side, so that incident light firstly passes through the aluminum gallium nitrogen absorption layer and is excited to generate current carriers, and then the current carriers are multiplied by the multiplication layer to generate internal gain, so that the light emitting efficiency is improved. The detection sensitivity is improved. The forbidden bandwidth range of the aluminum gallium nitrogen absorption layer coincides with the photon energy range of the solar-blind wave band, so that the aluminum gallium nitrogen absorption layer only absorbs the solar-blind wave band and transmits the wave band outside the solar-blind wave band, absorption of photons outside the solar-blind wave band when a silicon carbide absorption layer is adopted is avoided, light filtering in a light filter mode is also avoided, and the detection responsivity is improved.

The invention relates to the technical field of solar cells, in particular to a CZTSSe absorption layer film and a preparation method and application thereof, and the preparation method comprises the following steps: S1, preparing a CZTS precursor solution of a DMF solution system; s2, preparing a CZTS precursor film by adopting a sol-gel method; and S3, coating the CZTS precursor thin film with a NaF solution with the concentration of 0-0.2 mol / L, and then carrying out drying and selenylation treatment to obtain the CZTSSe absorption layer thin film. According to the invention, the CZTS precursor film prepared by using the green and environment-friendly solvent DMF is used for carrying out a NaF solution spin-coating annealing process, so that the improvement of the battery efficiency is successfully realized. The change of CZTSSe film element redistribution, defect chemical environment and grain boundary potential difference after the Na element is doped is avoided.

The invention discloses an electromagnetic signal superconducting observation system based on micro-shielding and thermal management and a design method, and the system comprises a high-temperature sensor unit which comprises a pressure-resistant constant-temperature container, a specially-made non-magnetic glass Dewar flask disposed in the pressure-resistant constant-temperature container, and a built-in three-axis high-temperature superconducting sensor. The pressure-resistant constant-temperature container comprises a base body made of carbon fiber reinforced plastics, and a low-frequency frequency-selecting shielding layer, an insulating thin layer, an absorbing layer and a high-frequency shielding layer are sequentially arranged outside the base body. According to the invention, the interference of high-frequency noise in a complex environment and the thermal noise of the three-axis high-temperature superconducting sensor can be significantly reduced. According to the system provided by the invention, the low-noise electromagnetic signal detection of the high-temperature superconducting sensor can be realized in a complex environment, the application range of electromagnetic method technology resource exploration can be widened, and the detection precision can be improved.

The invention relates to the technical field of solar cells, in particular to a hole transport layer-based perovskite solar cell preparation method, which comprises the following steps of: (1) cleaning a transparent conductive layer; (2) a hole transport layer is prepared on the transparent conductive layer by adopting a self-assembly molecular material and an additive, the self-assembly molecular material is phosphate molecules, and the additive is a nitrogen-containing high polymer material; (3) preparing a perovskite light absorption layer on the hole transport layer; (4) preparing a passivation layer on the perovskite light absorption layer; (5) preparing an electron transport layer on the passivation layer; (6) preparing an interface buffer layer on the electron transport layer; and (7) preparing an electrode layer on the interface buffer layer. According to the method, the additive is introduced into the hole transport layer of the perovskite solar cell, so that the agglomeration phenomenon of self-assembled molecules is reduced, the interface performance of the perovskite solar cell is remarkably optimized, and the photoelectric conversion efficiency and stability of the perovskite solar cell are improved.

The present disclosure relates a high entropy oxide and preparation method thereof. Specifically, the present disclosure provides a high entropy oxide of formula (FeNiCrMnMgCu)O including spinel structure, and the spinel structure includes oxygen vacancy (OV) concentration of 20 to 40%. The present disclosure further provides a photodetector, which includes a substrate, an absorbing layer comprising the high entropy oxide, and an electrode unit. With the plenty of oxygen vacancies, the high entropy oxide shows the excellent optical absorption properties, thereby having a bright prospect of the application.

The present invention relates to the technical field of aircraft absorbing honeycomb structure damage repair, specifically a method for repairing the electrical properties of damaged absorbing honeycomb cores, comprising the following steps: identifying and marking the outline of the damaged area of ​​the absorbing honeycomb core using nondestructive testing equipment; determining the material system, core cell dimensions, and electrical performance range based on the absorbing honeycomb core structural information; calculating the absorbing honeycomb core skeleton and the absorbing layer duty cycle based on the honeycomb core unit cell margins, wall thickness, and absorbing layer thickness; preparing a new absorbing honeycomb core corresponding to the size of the damaged area of ​​the absorbing honeycomb core, and using a cutting knife to cut along the periphery of the damaged area of ​​the absorbing honeycomb core to remove the damaged absorbing honeycomb core. The present invention selects a small, wave-transparent aramid paper honeycomb core as the skeleton, ensuring consistency with the absorbing honeycomb core material system and facilitating the restoration of mechanical properties. MATLAB mathematical calculation software can be used to calculate the target electrical properties of the adhesive under different small core structural parameters, enhancing the designability of the repair solution.

To provide a light receiving element capable of reducing a noise.SOLUTION: A light receiving element contains: a first semiconductor layer that has a first conductive type; a light absorption layer that is laminated onto the first semiconductor layer; a second semiconductor layer that is laminated onto the light absorption layer, and has a second conductive type; a first electrode that is electrically connected to the first semiconductor layer; a second electrode that is electrically connected to the second semiconductor layer; a first insulation film; and a light block film that is provided onto the first insulation film. A light receiving region is formed at a position that overlaps the light absorption layer, and the first insulation film covers a circumference of the light receiving region. The light block film covers the circumference of the light receiving region, and has a transmittance that is lower than that against light of the first insulation film.SELECTED DRAWING: Figure 2A

The invention discloses a method for improving the oxidation resistance of nickel-based superalloy, and belongs to the technical field of metal material surface modification. Based on the high-energy transient effect of laser shock waves, the method mainly comprises the key steps of alloy surface pretreatment, laser shock peening process implementation, post-treatment and the like. Specifically, firstly, the surface of the nickel-based single crystal alloy is subjected to pretreatment such as polishing and cleaning, surface defects and pollutants are removed, and the treatment quality is guaranteed; then, according to the material characteristics and performance requirements of the nickel-based single crystal alloy, laser parameters such as laser energy, pulse width and light spot diameter are accurately set, and proper restraint layer and absorption layer materials are selected; then, high-energy pulse laser is utilized to irradiate the absorption layer, high-temperature and high-pressure plasma is induced to be generated, the plasma expands and explodes to generate strong shock waves, the shock waves act on the alloy surface, the surface material is subjected to severe plastic deformation, a residual compressive stress layer with the depth capable of reaching hundreds of micrometers is formed, meanwhile, surface grains are refined, and the microstructure is optimized; and after the strengthening treatment is completed, simple cleaning and performance detection post-treatment are carried out. Through laser shock strengthening, a special organization structure with high density and low defect density is formed on the surface of the nickel-based single crystal alloy, diffusion and invasion of oxygen atoms are effectively hindered, and the oxidation resistance of the alloy is remarkably improved. According to the method, the controllability of technological parameters is high, the strengthening effect can be accurately regulated and controlled, the treatment process is free of pollution and high in efficiency, the obtained strengthened nickel-based single crystal alloy can be widely applied to the fields such as aerospace engine hot end parts and nuclear energy equipment which have strict requirements for high-temperature oxidation resistance, the reliability of related parts is greatly improved, and the service life of the related parts is greatly prolonged.

The invention provides a perovskite solar cell, a preparation method thereof and a photovoltaic module, and the perovskite solar cell comprises a substrate, a first carrier transmission layer, a perovskite absorption layer, a second carrier transmission layer and an electrode layer which are sequentially stacked. And a nano-silver particle layer is arranged between the first carrier transport layer and the perovskite absorption layer. According to the invention, the nano-silver particle layer is used as a crystal nucleus, so that the crystallization of the perovskite absorption layer is promoted, and the high-quality perovskite thin film with large grain size and low defect density is formed; in addition, the particle surface of the nano-silver particle layer can reflect sunlight, a light trapping structure is formed, and the utilization rate of light can be remarkably improved. In conclusion, the photoelectric property of the perovskite solar cell can be effectively improved, and the perovskite solar cell has a wide application prospect.

A semiconductor light-receiving element (100) according to the present disclosure comprises: a substrate (1); a first mesa structure (30) having at least an n-type semiconductor layer (2, 3), a multiplication layer (4), a p-type electric field relaxation layer (5), a light absorption layer (6), and an i-type semiconductor layer (8) having a larger band gap than the light absorption layer (6), said layers being sequentially formed on the substrate (1); a second mesa structure (31) having at least a window layer (9) having a larger band gap than the light absorption layer (6), the second mesa structure (31) being formed on the first mesa structure (30); and a terrace part (40) comprising the outermost surface of the first mesa structure (30) exposed to the outer-peripheral side of the second mesa structure (31).

The invention provides a preparation method of a perovskite solar cell of a self-assembly monomolecular layer based on micromolecule modification, and relates to the technical field of preparation of solar cells, the method comprises the following steps: spin-coating a blended solution on the surface of a substrate, then performing annealing treatment, and forming a modification layer on the substrate; wherein the 1, 4-benzene diphosphonic acid is anchored on the surface of the substrate through a phosphate radical group at one end of the 1, 4-benzene diphosphonic acid, gaps among SAM molecules are filled, a uniformly covered film is formed, and meanwhile, a phosphate radical group at the other end of the 1, 4-benzene diphosphonic acid is exposed on the surface of the modification layer; depositing a perovskite precursor solution on the surface of the formed modification layer, and performing crystallization treatment to form a perovskite light absorption layer; wherein the wettability of the perovskite precursor solution on the surface of the modification layer is improved by the phosphate radical group exposed on the surface of the modification layer. According to the invention, SAM molecular gaps are filled with 1, 4-benzene diphosphonic acid (the coverage rate is greater than 99.5%), and the pinhole defect is thoroughly eliminated.

The invention provides a solar cell, a photovoltaic module, a power generation device, a power utilization device and a passivating agent. The solar cell comprises a first electrode, a second electrode and a light absorption layer arranged between the first electrode and the second electrode. The solar cell further comprises a passivation layer arranged on at least one surface of the light absorption layer, and the passivation layer comprises a passivating agent. And / or the light absorption layer comprises a passivating agent; wherein the passivating agent comprises one or more of compounds as shown in a formula (I), a formula (II) or a formula (III). The solar cell of the present application has improved photoelectric properties and stability.