7177 results about "Absorption layer" patented technology

To provide a glass substrate-holding tool which is capable of avoiding scratching to the deposition surface of a glass substrate and dusting thereby caused as well as scratching and deposition of foreign substances at a center portion of the rear surface of the substrate and which is capable of suppressing dusting from the holding tool itself at the time of forming a multi-layered reflection film and an absorptive layer.

A glass substrate-holding tool having, formed on a surface of a flat base, a catching portion for catching and holding by van der Waals forces, wherein the catching portion is in contact with only the periphery of the glass substrate.

An integrated system for processing a semiconductor wafer includes a toroidal source plasma reactor for depositing a heat absorbing layer, the reactor including a wafer support, a reactor chamber, an external reentrant toroidal conduit coupled to said chamber on generally opposing sides thereof, an RF source power applicator for coupling power to a section of said external reentrant conduit and a process gas source containing a heat absorbing material precursor gas. The integrated system further includes an optical annealing chamber.

A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.

A transducer according to various aspects of the present invention provides high fractional bandwidth with relatively low degradation of the pulse duration and sensitivity. The transducer includes a back matching layer behind the transducer material. The back matching layer is characterized by an impedance selected to transmit a selected portion of the backwards propagating acoustic energy to an absorption layer. The remaining acoustic energy is reflected in the desired direction of propagation. As a result, the transducer provides enhanced bandwidth without excessive loss of sensitivity or increase in pulse duration.

An image is displayed by modulating TM-polarized light between the polarizer 2 and the wire grid polarizer 18 through the variation of the optical characteristic of the liquid crystal layer 12 interposed between the transparent plate 4 and the transparent plate 26. Degradation of contrast in the bright ambience is avoided by providing an absorption layer for absorbing TE-polarized light on that surface of the wire grid polarizer 18 which faces the liquid crystal layer 12.

Film formation is conducted at a low temperature to improve conversion efficiency and productivity and to enable a wider choice of substrate materials to be used.

The invention relates to the light absorption layer of a CIS compound semiconductor thin-film solar cell and to a method of forming the layer. The light absorption layer comprises a compound represented by Cu_x(In_1-yGa_y)(Se_1-zS_z)₂ and having a chalcopyrite type structure, the proportions of the components satisfying 0.86≦x≦0.98, 0.05≦y≦0.25, 0≦z≦0.3, x=αT+β, α=0.015y−0.00025, and β=−7.9y+1.105, provided that T (° C.) is anneal temperature and the allowable range for x is ±0.02. The layer is formed by the selenization method at a low temperature (about 500≦T≦550). As the substrate is used a soda-lime glass having a low melting point.

A chalcopyrite type solar cell has a mica aggregate substrate formed by binding mica particulates with a resin. A multilayer body consisting of a first electrode, a light absorption layer and a second electrode is formed on the mica aggregate substrate with a smoothing layer and a binder layer interposed between the substrate and the body. The smoothing layer is preferably made of SiN or SiO₂, and the binder layer is made of TiN or TaN.

A high-resistance buffer layer and a window layer (transparent conductive film) are successively formed by the MOCVD method to obtain the same output characteristics as in conventional film deposition by the solution deposition method and to simplify a film deposition method and apparatus. Thus, the cost of raw materials and the cost of waste treatments are reduced to attain a considerable reduction in production cost.

After a metallic base electrode layer 1B and a light absorption layer 1C are formed in this order on a glass substrate 1A, a high-resistance buffer layer 1D and a window layer 1E are successively formed in this order in a multi layer arrangement on the light absorption layer 1C of the resultant semifinished solar cell substrate by the MOCVD method. Consequently, a film deposition method and apparatus are simplified and the cost of raw materials and the cost of waste treatments can be reduced.

An absorbent article includes a pair of grooves in which each of the grooves has a central region in the longitudinal direction has a first section which is formed so as to be curved in a convex manner at an inside of a widthwise direction of the absorption layer; a second section and a third section which is linked with each end of the first section and is formed so as to be curved in a convex manner at an outside of the widthwise direction. A radius of curvature of the first section is smaller than the radius of curvature of either the second section or the third section.

An avalanche photo-detector (APD) is disclosed, which can reduce device capacitance, operating voltage, carrier transport time and dark current as well as increasing response speed and output power. Thus, an avalanche photo-detector (APD) with high saturation power, high gain-bandwidth product, low noise, fast response, low dark current is achieved. The APD includes an absorption layer with graded doping for converting an incident light into carriers, an undoped multiplication layer for multiplying current by means of receiving carriers, a doped field buffer layer sandwiched between the absorption layer and the multiplication layer for concentrating an electric field in the multiplication layer when a bias voltage is applied, and an undoped drift layer sandwiched between the absorption layer and the field buffer layer for capacitance reduction.

An absorbent article having a compressed region formed by a compressing process in an absorption layer on a side facing to the backsheet; and a plurality of pressed grooves are formed by a pressing process in the absorption layer on a side facing to the topsheet, within a region opposed to the compressed region.

The invention relates to a perovskite solar battery and a preparing method thereof. The perovskite solar battery comprises a transparent electrode, a hole transmission layer, a perovskite light absorption layer, an electronic transmission layer and a metal electrode. The hole transmission layer comprises at least one of PEDOT: PSS, P3HT, PTAA, PThTPTI, metallic oxide and graphene oxide. The electronic transmission layer comprises at least one of 58 pi-electronic fullerene PCBM, 56 pi-electronic fullerene OQMF, 54 pi-electronic fullerene OQBMF, PFN, PEIE, ZnO, TiO2, doped or modified ZnO or TiO2. The perovskite solar battery is high in energy exchange efficiency and low in cost and can be produced on a large scale, and the preparing method is simple in technology.

The invention relates to a perovskite solar cell and a preparation method thereof. The perovskite solar cell is composed of an FTO glass substrate, a sandwich structure TiO2/ZnO/TiO2 compact layer, a TiO2 mesoporous/perovskite structure material active light absorption layer, a spiro-OMeTAD hole transferring layer and a gold electrode. Compared with the prior art, the sandwich structure TiO2/ZnO/TiO2 compact layer combines with the advantages and disadvantages of TiO2 and ZnO, so that fill factors of the perovskite solar cell are improved to 70%, and the photoelectric conversion efficiency reaches 12.6%. Equipment for preparing the perovskite solar cell is simple, the preparing process is simple, control is easy, the cost is low, and the perovskite solar cell has a very good industrial application prospect.

The optical filter of the present invention is provided with a near infrared light absorption layer that contains a component composed of copper ions and a phosphoric ester compound expressed by the following Formula (10), in which the phosphorus atom content in the near infrared light absorption layer is 0.4 to 1.3 mol per mole of copper ions, and the copper ion content in the near infrared light absorption layer is 2 to 60 wt %. Thus keeping the phosphorus atom and copper ion content within specific ranges results in good near infrared light absorption and in improved moisture resistance whereby devitrification caused by whitening is suppressed

A half-transmittance photodiode usable as a photodetector in receivers for "ping-pong transmission" is improved in temperature characteristic, so that a half-transmittance photodiode usable at low temperatures is available. A p-n junction is formed in a buffer layer, not in an absorption layer.

The present invention provides a method of manufacturing a light-emitting device and an evaporation donor substrate, by which the precision of patterning of an EL layer of each color can be improved in manufacture of a full color flat panel display using emission colors of red, green, and blue. A first substrate which includes a reflective layer including an opening portion, a heat insulating layer including an opening portion in a position overlapped with the opening portion of the reflective layer over the reflective layer, a light absorption layer covering the opening portion of the reflective layer and the opening portion of the heat insulating layer over the heat insulating layer, and a material layer over the light absorption layer is used. While one surface of the first substrate is disposed close to a deposition target surface of a second substrate, the first substrate is irradiated with light from the other surface of the first substrate. The irradiation light is absorbed in the light absorption layer in the position overlapped with the opening portion of the reflective layer to heat an evaporation material. The heated evaporation material is evaporated onto the second substrate.

A laminate which can easily attain safety standards such as impact resistance, while cost reduction is aimed for, for example, when the laminate is provided on a display viewing surface, and a display apparatus using this laminate are provided. By using a filter for a display having a specified parameter and a specified thickness, the impact resistance is enhanced. By using the filter for the display containing a transparent adhesive layer having a specified Young's modulus and a specified thickness, the impact resistance is enhanced. By using the filter for the display containing a transparent resin layer having a specified Young's modulus and a specified thickness, the impact resistance is enhanced. By using the filter for the display containing an impact absorption layer having a specified penetration and a specified thickness, the impact resistance is enhanced.

The present invention discloses printing plates comprising a substrate and a radiation-absorptive layer, wherein the radiation-absorptive layer comprises at least one modified pigment product. The modified pigment product comprises a pigment having attached at least one organic group and at least one amphiphilic counterion. Methods of imaging printing plates are also disclosed.