3219 results about "Absorption layer" patented technology

An optical device for an aerial display apparatus includes: a planar base member; a plurality of optical elements provided below the base member, each extending in a first direction and aligned in a second direction orthogonal to the first direction; a reflection layer provided in each of the optical elements and configured to reflect light; and an absorption layer provided on the reflection layer and configured to absorb light. Each of the optical elements has an incident surface and a reflection surface which are inclined with respect to a normal direction of the base member and are in contact with each other. The reflection layer is provided on the reflection surface. The optical device is arranged in such a manner as to receive external light on the incident surface.

The invention relates to a preparation method of a self-assembled monomolecular layer in a perovskite cell, and belongs to the technical field of solar cells, and the preparation method comprises the following steps: S1, preparing an SAM layer; step S1.1, soaking the conductive glass substrate into the preheated SAM first precursor solution; step S1.2, quickly soaking in a second SAM precursor solution; s1.3, taking out and removing the residual solvent to obtain an SAM layer; step S2, annealing; s3, preparing a perovskite light absorption layer and other functional layers; and depositing a perovskite light absorption layer and other functional layers on the SAM layer in sequence, and finally preparing a complete perovskite solar cell. According to the method, the appropriate high-boiling-point solvent is selected to prepare the SAM precursor solution, then the conductive substrate is rapidly soaked in the SAM precursor solution under the condition that the high temperature is kept, SAM molecules are rapidly self-assembled within seconds at the high temperature, the self-assembled molecular layer is more uniform and compact, the perovskite buried bottom interface has fewer defects, the interface contact is better, and the performance of the conductive substrate is improved. And the efficiency and the stability of the perovskite cell are obviously improved.

The invention relates to the technical field of solar cells, and particularly provides a four-end laminated cell module, preparation thereof and a photovoltaic module. The four-end laminated battery assembly comprises a bottom battery pack and a perovskite battery pack, the perovskite battery pack comprises a plurality of perovskite sub-batteries, and each perovskite sub-battery comprises a first electrode layer, a first transmission layer, a perovskite light absorption layer, a second transmission layer and a second electrode layer which are stacked in sequence; the perovskite sub-cell further comprises a first groove penetrating through the first electrode layer, a second groove penetrating through the first transmission layer, the perovskite light absorption layer and the second transmission layer, and a third groove penetrating through the second electrode layer. The total width of the second trench and the third trench is 500-770 [mu] m. According to the technical scheme of the invention, the optical distribution can be adjusted, and the optical performance of the module can be improved.

The invention relates to a multi-layer composite black film and a preparation method thereof. The multi-layer composite black film is formed by sequentially stacking a base material layer, a multi-layer film system and a top covering layer, the multi-layer film system is formed by alternately stacking a plurality of absorption layers and a plurality of oxide layers, the number of the layers is 7-30, an initial layer is an oxide layer, the refractive indexes of the oxide layers are the same (1.4-1.5), the thickness ratio of the oxide layers to the absorption layers is larger than 2, and the thickness ratio of the top covering layer to the absorption layers is larger than 1. And the thicknesses of the two layers are increased and then reduced from the substrate layer to the top covering layer. A buffer layer with gradually changed oxygen content is arranged between the oxide layer and the absorption layer, and both the oxide layer and the top covering layer are made of silicon dioxide. The preparation method comprises the following steps: providing the substrate layer, alternately depositing the absorption layer and the oxide layer by using a magnetron sputtering or electron beam evaporation process to form a multilayer film system, then forming the top covering layer, controlling parameters such as vacuum degree, power, temperature and the like during deposition, and forming the buffer layer in the same cavity. The multilayer composite black film has the inner surface reflectivity of less than 1% and the appearance surface reflectivity of less than 5%, and is simple in structure and low in preparation cost.

The invention discloses a self-assembly material, a solar cell and electric equipment, the self-assembly material comprises a first self-assembly molecular material, the structural formula of the first self-assembly molecular material is # imgabs0 #, Ar represents an aryl group, the Ar comprises at least one coordination atom, the coordination atom comprises lone pair electrons which are not bonded, and the first self-assembly molecular material comprises a second self-assembly molecular material, a third self-assembly molecular material and a fourth self-assembly molecular material, the coordination atoms comprise one or more of phosphorus atoms, arsenic atoms, sulfur atoms and selenium atoms; l comprises one or more of a carbon-containing group, a nitrogen-containing group, an oxygen-containing group, a silicon-containing group, a phosphorus-containing group and a sulfur-containing group, and n is 0-10; a comprises a hydrophilic group. When the self-assembly material is used for passivating the light absorption layer of the solar cell, a better passivation effect can be realized, and the photoelectric conversion efficiency and the stability of the solar cell can be improved.

A photo-detecting apparatus is provided. The photo-detecting apparatus includes a carrier conducting layer having a first surface; an absorption region is doped with a first dopant having a first conductivity type and a first peak doping concentration, wherein the carrier conducting layer is doped with a second dopant having a second conductivity type and a second peak doping concentration, wherein the carrier conducting layer comprises a material different from a material of the absorption region, wherein the carrier conducting layer is in contact with the absorption region to form at least one heterointerface, wherein a ratio between the first peak doping concentration of the absorption region and the second peak doping concentration of the carrier conducting layer is equal to or greater than 10; and a first electrode and a second electrode both formed over the first surface of the carrier conducting layer.

This disclosure relates to an intermediate substrate (10) for the fabrication of a semiconductor substrate, comprising successively: a first semiconductor layer (2), a first thermal barrier layer (5), a support (13) comprising an absorption layer (3) configured to absorb laser radiation in a predetermined wavelength range, the temperature of the absorption layer (3) increasing during absorption, and a separation zone (8) adjacent to the absorption layer (3) and configured to thermally degrade under the effect of the temperature increase of the absorption layer, so as to separate at least a portion of the support (13) from the remainder of the intermediate substrate (10). (Shortcut figure: Fig. 1)

The invention provides a medium-wave infrared detection chip and system, the chip is composed of a plurality of detection units arranged in the same plane, each detection unit is composed of a substrate, a buffer layer, a lower contact layer, an absorption layer, a barrier layer and an upper contact layer in sequence, the chip is arranged based on an nBp type structure, the buffer layer, the lower contact layer, the absorption layer, the barrier layer and the upper contact layer are all of a multi-period stacked superlattice structure, the thickness, the number of layers and the doping concentration of the InAs doped layers and the GaSb doped layers which are stacked in each period are controlled, dark current suppression in the mid-infrared detection process is achieved, and the quantum efficiency is effectively improved.

The embodiment of the invention provides a perovskite solar cell, a preparation method thereof and a perovskite solar cell module. The perovskite solar cell comprises a substrate and a transparent conductive oxide layer, wherein the transparent conductive oxide layer is provided with a plurality of first regions and second regions which are arranged in a staggered manner; a first etching groove is formed in the transparent conductive oxide layer in the first region; the insulating protection layer is positioned in the first region; the first charge transport layer, the perovskite light absorption layer and the second charge transport layer are located in the second region; the second etching groove is positioned in the insulating protection layer; the electrode layer is positioned on the second charge transmission layer and the insulation protection layer and in the second etching groove; and the third etching groove is positioned in the electrode layer of the first region. According to the technical scheme of the invention, the insulation protection layer in the perovskite solar cell can protect the perovskite light absorption layer, reduces the damage of laser scribing to the perovskite light absorption layer, and improves the stability of a perovskite solar cell module.

The film-coated member comprises: a substrate; the corrosion-resistant layer is arranged on the surface of the substrate and is formed by adopting an atomic layer deposition technology; the light absorption layer is arranged on the surface, away from the substrate, of the corrosion-resistant layer, the thickness of the light absorption layer is 1-100 nm, and the light absorption layer is used for reducing interference of the substrate on the color of the coated part; the light interference layer is arranged on the surface, away from the substrate, of the light absorption layer, the light interference layer is a laminated layer of at least two sublayers made of different materials, the materials of the sublayers are selected from at least one of oxides, simple substances, carbides, nitrides and sulfides, and the thickness of the light interference layer is 100-2000 nm; and the wear-resistant layer is arranged on the surface, deviating from the substrate, of the light interference layer and is formed by adopting an atomic layer deposition technology. And the coated part is red. Through the comprehensive superposition effect of the four layers, the coated part presents a red appearance which is most difficult to produce at present, and the decorative effect of the coated part is greatly improved. The invention further provides a preparation method of the coated part.

The invention discloses a nonlinear Hall terahertz rectifying device which comprises a substrate, an oxide layer, an absorption layer and an electrode from bottom to top. The substrate is made of intrinsic high-resistance silicon, the oxide layer is made of silicon dioxide, the absorption layer is a Weel semimetal film, and the electrode is a four-end metal electrode. The Weel semimetal thin film is a niobium iridium tellurium (NbIrTe4) thin film. A cross-shaped structure is etched on the niobium-iridium-tellurium thin film, and a four-end metal electrode is manufactured through electron beam exposure, electron beam evaporation and a stripping technology. According to the invention, a simple cross-shaped geometric structure on Weel semimetal is utilized to couple an oscillating terahertz light field radiated along the longitudinal direction, and the generation of a direct current electric signal at the transverse end is realized through a nonlinear Hall effect induced by the Bell curvature, and the process does not involve the help of any external field. According to the invention, the broadband terahertz response of 0.02-0.82 THz is realized, the power consumption is low, and integration is facilitated.

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

An optical detector system providing electrical output signals. The system includes an apertured surface and a transparent window, with a metasurface on the window's opposite side. The metasurface imparts spatially varying phase delay and / or amplitude or polarization modulation to deflect ILR based on their angle of incidence, producing exiting light rays. These rays are detected by a two-dimensional tetralateral position-sensing detector (TLD) with a single resistive photo-absorption layer and four electrodes. The TLD generates X-Y position signals proportional to the azimuth and elevation of the incoming ILR. A computer may be included to calculate these angular values from the position signals.

The invention belongs to the technical field of solar cells, and particularly relates to a fluorinated biguanide salt synergistically passivated perovskite solar cell and a preparation method thereof. The method comprises the following steps: S1, coating the surface of a perovskite light absorption layer with a fluorinated biguanide hydrochloride solution to form a synergistic layer; coating the surface of the synergistic layer with a halogenated phenylethylamine solution to form a synergistic passivation layer; and S2, arranging an electron transport layer and a hole blocking layer on the surface of the passivation layer. According to the invention, the synergistic passivation layer is introduced in the preparation process of the perovskite solar cell. The introduction of the fluorinated biguanide salt passivation layer can modify the perovskite crystal and generate the low-dimensional perovskite at the crystal boundary, and the second passivation layer can interact with the low-dimensional perovskite structure, thereby further protecting the perovskite film, improving the interface of the perovskite light absorption layer and the electron transport layer, and improving the short-circuit current density, open-circuit voltage and cell efficiency of the cell.

An antenna system includes a radiating element layer including a plurality of radiating elements, a reflective frequency selective surface (FSS) layer having a resonance transmission frequency range, and an absorptive FSS layer between the reflective FSS layer and the radiating element layer and having a resonance absorption frequency range. The resonance transmission frequency range is greater than the resonance absorption frequency range.

The invention provides a method for improving the efficiency of a perovskite solar cell, and relates to the technical field of solar cells, the cell structure sequentially comprises a bottom substrate, a transparent electrode, a hole transport layer, a perovskite light absorption layer, an interface modification layer, an electron transport layer, a buffer layer and a metal electrode from bottom to top; a new additive 4-(2-aminoethyl) benzenesulfonic acid hydrochloride is introduced into the perovskite light absorption layer, the additive is introduced into the perovskite light absorption layer by being dissolved in a perovskite precursor solution, and the dosage of the additive is 0.1-1.5 mg / mL. Based on the method, the defect density of shallow energy level and deep energy level of perovskite is reduced, a more intrinsic perovskite absorption layer is formed through induction, balance extraction of electrons and holes is promoted, and then the open-circuit voltage and efficiency of the solar cell are remarkably improved.

The invention provides a temperature control system of an electrostatic adsorption disc and an improvement method of temperature control performance. According to the system, a temperature control layer is arranged in an electrostatic adsorption disc, and the temperature control layer comprises a graphite heat absorption layer and a graphene heat conduction layer; the system further comprises a laser generator and a controller. During working, the laser generator emits heating laser to the graphite heat absorption layer, so that the graphite heat absorption layer efficiently absorbs energy to generate heat, and then the heat is quickly and uniformly conducted to the surface of the electrostatic adsorption disc through the graphene heat conduction layer with ultrahigh heat conductivity. Laser heating is used for replacing traditional resistance heating, graphene heat conduction is used for replacing traditional metal heat conduction, the method has the advantages of being high in temperature switching speed, high in control precision, good in temperature uniformity and the like, and the temperature control performance of the electrostatic adsorption disc can be remarkably improved.

According to the multi-layer structure of the composite board and the processing method of the multi-layer structure, swelling blocks on a wear-resisting layer form protruding particles after meeting water, the anti-skid performance is remarkably improved, the safety of a user in a wet and slippery environment is ensured, the color changing function of a humidity sensing piece can rapidly remind the user that water exists on the ground, accidental slipping is prevented, and the service life of the user is prolonged. The efficient water absorption layer and the self-heating layer achieve rapid water absorption and rapid drying and keep the floor dry, the wear-resistant layer and the expansion particles are made of wear-resistant and tear-resistant materials, durability of long-term use is guaranteed, application of intelligent materials such as a shape memory polymer retractable film and the self-heating layer made of moisture absorption and heating materials guarantees reuse and efficient performance of the materials, and the service life of the materials is prolonged. The base material layer and the moisture-proof balance layer ensure the stability and the moisture-proof performance of the structure, the processing process is simplified through composite forming in a hot-press gluing or riveting mode and reserved groove arrangement, and it is ensured that all layers of materials are tightly combined.

The invention belongs to the technical field of solar cells, and relates to a perovskite laminated cell and a preparation method thereof, the perovskite laminated cell can reduce light parasitic absorption, the perovskite laminated cell comprises a bottom crystalline silicon cell, the bottom crystalline silicon cell comprises a substrate, the substrate comprises a first surface and a second surface which are opposite to each other, a first tunneling oxide layer and a first composite passivation layer are sequentially arranged on the first surface in the direction perpendicular to and away from the first surface, and the first composite passivation layer comprises first doped crystalline silicon conductive regions and first wide-band gap conductive regions which are alternately arranged in the direction parallel to the first surface; the top perovskite cell is arranged on the first composite passivation layer and is electrically connected with the bottom crystalline silicon cell, and the top perovskite cell comprises a hole transport layer, a perovskite active absorption layer, an electron transport layer, an interface buffer layer, a transparent conductive layer and an anti-reflection layer which are sequentially far away from the first composite passivation layer; and a first electrode in electrical contact with the transparent conductive layer.

This semiconductor light-receiving element (1) is provided with: a substrate (10); a semiconductor laminated part (20) that is formed on the substrate (10); and a first electrode (40) and a second electrode (50) that are electrically connected to the semiconductor laminated part (20). The semiconductor laminated portion (20) includes a light absorption layer (24) including InGaAs and including a first region (24a) of a first conductivity type, a first semiconductor layer (S1) located between the substrate (10) and the light absorption layer (24), a second semiconductor layer (S2) located on the opposite side of the substrate (10) with respect to the light absorption layer (24), and a first region (24a) of a second conductivity type formed of InP, InGaAsP, InAsP, InGaAsP, InAsP, InGaAsP, InAsP, InGaAsP, InAsP, InGaAsP, InGaAsP, InAsP, InGaAsP, InGaAsP, InAsP, InGaAsP, InGaAsP, InGaAsP, InGaAsP, InGaAsP, InGaAsP, and a capacitance reduction layer (23) of the first conductivity type, which has an arbitrary configuration of AlInGaAs and is positioned between the light absorption layer (24) and one of the first semiconductor layer (S1) and the second semiconductor layer (S2), and which has a carrier concentration of 5 * 1015 cm-3 or less and is higher than the carrier concentration of the first region (24a) of the light absorption layer (24). The band gap of the capacitance reduction layer (23) is larger than the band gap of the light absorption layer (24).

The invention discloses a microstructure silicon carbide ultraviolet photoelectric detector with high quantum efficiency and a preparation method thereof, and belongs to the technical field of ultraviolet photoelectric detection. The detector adopts a bottom-to-top structural design and comprises a silicon carbide highly-doped n + type substrate, an n type buffer layer, a low-doped n-type absorption layer, a low-doped p-type absorption layer (containing a microstructure), an annular highly-doped p + type ohmic contact layer and a passivation isolation layer. Reverse bias voltage is applied to the p + type ohmic contact electrode to form a depletion electric field, and the microstructure promotes the p-i-n structure electric fields to be mutually connected and coupled, so that the photon-generated carrier depletion efficiency is improved, and the responsivity of the device and the external quantum efficiency are enhanced. And meanwhile, the microstructure enables a short-wave ultraviolet signal to directly penetrate through the p-type absorption layer to enter the internal absorption layer, so that photon-generated carrier recombination caused by surface defects of the p + type ohmic contact layer is avoided, the collection efficiency of photon-generated carriers is improved, and ultraviolet full-band detection is realized.

The tellurium-cadmium-mercury double-layer component heterogeneous planar junction detector comprises a substrate material layer, an n-type absorption layer, a surface n-type wide band gap heterogeneous layer, a passivation layer and a contact electrode layer which are arranged in a stacked mode. The surface n-type wide band gap heterogeneous layer is a wide band gap heterogeneous layer prepared on the surface of the n-type absorption layer based on a mercury-rich vertical liquid phase epitaxy technology, and the residual impurities are n-type; the passivation layer covers at least partial areas of the isolation region and the p-type injection region in the orthographic projection direction, and the part, not covering the p-type injection region, of the passivation layer is a contact hole; the contact electrode layer is in contact with the p-type injection region, and the orthographic projection area of a contact electrode is larger than and covers the contact hole. According to the invention, interface mutual diffusion is realized in the growth process of the n-type wide bandgap heterogeneous layer, and the mercury cadmium telluride p-on-n planar heterojunction device is realized through As ion implantation. Tunneling current and surface electric leakage can be effectively suppressed, dark current can be reduced, and device performance can be improved.

An optical receiver comprises a monolithically integrated pin photodiode (PIN) and transimpedance amplifier (TIA). The TIA comprises InP heterojunction bipolar transistors (HBT) fabricated from a first plurality of layers of an epitaxial layer stack grown on a SI:InP substrate; the PIN is fabricated from a second plurality of layers of the epitaxial layer stack. The p-contact of the PIN is directly connected to the input of the TIA to reduce PIN capacitance CPIN. The TIA capacitance CTIA may be matched to CPIN. Device parameters comprising: a thickness of the absorption layer, window area, and an optional mirror thickness of the PIN; device capacitance CPIN+CTIA; and feedback resistance RF of the TIA; are optimized to performance specifications comprising a specified sensitivity and responsivity at an operational wavelength. This design approach enables cost-effective fabrication an integrated PIN-TIA, for applications such as a 1577 nm receiver for an ONU for 10G-PON.

The invention discloses a solar cell module, a preparation method, electric equipment and power generation equipment, the solar cell module comprises a hole transport layer, a light absorption layer and a passivation layer, the hole transport layer comprises a first hole transport layer and a second hole transport layer, and the second hole transport layer is provided with a plurality of pores; the surface, close to the second hole transport layer, of the passivation layer is at least partially embedded in the pores of the second hole transport layer, and the surface, away from the second hole transport layer, of the passivation layer is uneven. According to the embodiment of the invention, good hole transport efficiency is provided through the first hole transport layer; the contact area between the second hole transport layer and the light absorption layer is increased through the second hole transport layer with a plurality of pores, and the hole extraction rate is improved; the hole transmission efficiency is improved through the passivation layer; the hole transport layer and the passivation layer are cooperatively used, so that the device performance of the corresponding solar cell module is improved.

The invention discloses a heat dissipation module and an optical machine, and relates to the technical field of optical machine manufacturing, the heat dissipation module comprises a heat conduction part, a semiconductor refrigeration part, a control assembly and a water absorption layer, the heat conduction part comprises a heat conduction plate and an extension section arranged on the heat conduction plate, the semiconductor refrigeration part comprises a first surface and a second surface which are oppositely arranged, and the first surface is attached to the heat conduction plate; the control assembly comprises a control panel and a chip installed on the control panel, the control panel is provided with a first through hole, and the water absorption layer is provided with a second through hole; the chip, the control panel, the water absorption layer, the heat conduction plate and the semiconductor refrigeration piece are arranged in sequence, and the extending section sequentially penetrates through the second through hole and the first through hole to be connected with the chip. The heat dissipation module has the advantage that the failure risk of an optical machine can be reduced.

The invention belongs to the technical field of endoscope lens coating, and particularly relates to a lens shading film and a preparation method and application thereof. The lens shading film provided by the invention comprises a light absorbing layer, a reflecting layer and an insulating layer which are sequentially stacked, and the light absorbing layer is in contact with a lens substrate; the material of the light absorption layer comprises chromium and / or titanium; the reflecting layer is made of aluminum and / or silver; and the material of the insulating layer comprises silicon dioxide and / or silicon nitride. Through the synergistic effect of the light absorbing layer and the reflecting layer, the shading performance of the shading film is remarkably improved; meanwhile, the lens shading film provided by the invention is good in uniformity, so that the optical performance of the lens is not influenced. In conclusion, the coating of the lens shading film provided by the invention is compact and uniform and can reach over OD2, and the average transmittance in a visible light range has a shading effect of less than 0.5%.

The invention relates to the technical field of LEDs, in particular to a quaternary yellow-green LED epitaxial wafer and a preparation method thereof. The quaternary yellow-green LED epitaxial wafer sequentially comprises a GaAs substrate, a GaAs buffer layer, an N-type gradient doped waveguide layer, a single quantum well active layer, a P-type gradient doped waveguide layer, a P-type self-absorption layer, a P-type transition layer and a P-type periodic current expansion layer from bottom to top. Through the design that the N / P type gradient doped waveguide layer is combined with the single quantum well active layer, the P type self-absorption layer and the P type GaP / GaAsP periodic current expansion layer, and the MOCVD technology is adopted for growth, the obtained low-brightness and high-reliability quaternary yellow-green LED epitaxial wafer structure has the advantages of being high in antistatic performance, excellent in aging performance, good in surface flatness and uniformity, high in light emitting efficiency and the like. The method has the characteristics of simple process, low production cost and raw material cost and the like, is used for replacing two-component and three-component LEDs grown by an LPE technology, and has better reliability and application prospect.

The embodiment of the invention provides a display mother board and a preparation method thereof, a preparation method of a display panel and a display device, and relates to the technical field of display, the display mother board comprises a substrate, a pixel defining layer, a light emitting unit, an alignment mark and a light absorption layer; the pixel defining layer is located on one side of the substrate, a pixel opening is defined by the pixel defining layer, and at least part of the light-emitting unit is located in the pixel opening; the alignment mark is located in the substrate and / or on the substrate; the light absorption layer is located on the side, away from the substrate, of the alignment mark and covers at least part of the alignment mark. According to the display mother set, the color difference between the alignment mark and the alignment mark on the mask can be larger, so that the alignment between the alignment mark and the alignment mark on the mask can be more accurate, and the quality of the display mother set can be improved.

The invention provides a PACl modified perovskite light absorption layer, a PACl modified perovskite solar cell and a method, the PACl modified perovskite light absorption layer comprises a perovskite precursor solution composed of a (FA < 0.95 > MA < 0.05 >) < 0.95 > Cs0 < 0.05 > Pb < I < 0.95 > Br < 0.05 >) < 3 > perovskite material and a PACl passivation material, and the PACl modified perovskite light absorption layer is obtained through spin coating and annealing of the perovskite precursor solution. According to the invention, n-propyl ammonium chloride PACl is added into the perovskite precursor solution to modify perovskite, so that the defects in the perovskite material are significantly reduced, and the efficiency of the perovskite solar cell is improved.

The invention discloses a stress balance InP-InGaAs avalanche photodetector and a preparation method thereof. An n-type InP buffer layer, an unintentionally doped In < 0.53 > Ga < 0.47 > As bottom absorption layer, a plurality of groups of unintentionally doped stress matching InGaAs absorption layers, an unintentionally doped In < 0.53 > Ga < 0.47 > As top absorption layer, an n-type InP charge layer and an unintentionally doped InP cover layer are sequentially grown on an n-type InP substrate; the optimal photosensitive wavelength of the avalanche photodetector is 2.0 microns, and the device can stably work at room temperature at low dark current.