882 results about "Absorption layer" patented technology

The invention provides a preparation method of a barrier type antimonide infrared detector. The preparation method comprises the following steps: selecting a gallium antimonide substrate; a gallium antimonide buffer layer, an indium arsenide heavily-doped layer, a class II superlattice absorption layer and an aluminum-arsenic-antimony barrier layer are sequentially grown on the substrate in an epitaxial mode through a molecular beam epitaxy method; mechanically stripping the hexagonal boron nitride two-dimensional material, and transferring the stripped hexagonal boron nitride to the aluminum-arsenic-antimony barrier layer to form a Van der Waals heterojunction and composite barrier layer structure; depositing electrodes by using an ultraviolet lithography technology and a thermal evaporation mode to form one electrode arranged on the gallium antimonide buffer layer and the other electrode arranged on the boron nitride; a large-numerical-aperture micro-lens array is processed on a substrate, and the micro-lens array is composed of gallium antimonide cylinders with a phase modulation function; therefore, the antimonide medium-wave infrared detector with the composite barrier layer can be formed, the quantum efficiency is improved, the order of magnitude of dark current is reduced, and room-temperature medium-wave infrared detection can be realized.

The invention discloses a heat dissipation module and an optical machine, and relates to the technical field of optical machine manufacturing, the heat dissipation module comprises a heat conduction part, a semiconductor refrigeration part, a control assembly and a water absorption layer, the heat conduction part comprises a heat conduction plate and an extension section arranged on the heat conduction plate, the semiconductor refrigeration part comprises a first surface and a second surface which are oppositely arranged, and the first surface is attached to the heat conduction plate; the control assembly comprises a control panel and a chip installed on the control panel, the control panel is provided with a first through hole, and the water absorption layer is provided with a second through hole; the chip, the control panel, the water absorption layer, the heat conduction plate and the semiconductor refrigeration piece are arranged in sequence, and the extending section sequentially penetrates through the second through hole and the first through hole to be connected with the chip. The heat dissipation module has the advantage that the failure risk of an optical machine can be reduced.

The invention discloses a stress balance InP-InGaAs avalanche photodetector and a preparation method thereof. An n-type InP buffer layer, an unintentionally doped In < 0.53 > Ga < 0.47 > As bottom absorption layer, a plurality of groups of unintentionally doped stress matching InGaAs absorption layers, an unintentionally doped In < 0.53 > Ga < 0.47 > As top absorption layer, an n-type InP charge layer and an unintentionally doped InP cover layer are sequentially grown on an n-type InP substrate; the optimal photosensitive wavelength of the avalanche photodetector is 2.0 microns, and the device can stably work at room temperature at low dark current.

The invention provides a silicon carbide single-photon detector and a preparation method thereof, and relates to the technical field of silicon carbide solar blind detection. The silicon carbide multiplication layer and the aluminum gallium nitrogen absorption layer of different material systems are sequentially grown on the silicon carbide substrate, and the side, far away from the silicon carbide substrate, of the aluminum gallium nitrogen absorption layer is the light incidence side, so that incident light firstly passes through the aluminum gallium nitrogen absorption layer and is excited to generate current carriers, and then the current carriers are multiplied by the multiplication layer to generate internal gain, so that the light emitting efficiency is improved. The detection sensitivity is improved. The forbidden bandwidth range of the aluminum gallium nitrogen absorption layer coincides with the photon energy range of the solar-blind wave band, so that the aluminum gallium nitrogen absorption layer only absorbs the solar-blind wave band and transmits the wave band outside the solar-blind wave band, absorption of photons outside the solar-blind wave band when a silicon carbide absorption layer is adopted is avoided, light filtering in a light filter mode is also avoided, and the detection responsivity is improved.

The invention discloses a method for improving the oxidation resistance of nickel-based superalloy, and belongs to the technical field of metal material surface modification. Based on the high-energy transient effect of laser shock waves, the method mainly comprises the key steps of alloy surface pretreatment, laser shock peening process implementation, post-treatment and the like. Specifically, firstly, the surface of the nickel-based single crystal alloy is subjected to pretreatment such as polishing and cleaning, surface defects and pollutants are removed, and the treatment quality is guaranteed; then, according to the material characteristics and performance requirements of the nickel-based single crystal alloy, laser parameters such as laser energy, pulse width and light spot diameter are accurately set, and proper restraint layer and absorption layer materials are selected; then, high-energy pulse laser is utilized to irradiate the absorption layer, high-temperature and high-pressure plasma is induced to be generated, the plasma expands and explodes to generate strong shock waves, the shock waves act on the alloy surface, the surface material is subjected to severe plastic deformation, a residual compressive stress layer with the depth capable of reaching hundreds of micrometers is formed, meanwhile, surface grains are refined, and the microstructure is optimized; and after the strengthening treatment is completed, simple cleaning and performance detection post-treatment are carried out. Through laser shock strengthening, a special organization structure with high density and low defect density is formed on the surface of the nickel-based single crystal alloy, diffusion and invasion of oxygen atoms are effectively hindered, and the oxidation resistance of the alloy is remarkably improved. According to the method, the controllability of technological parameters is high, the strengthening effect can be accurately regulated and controlled, the treatment process is free of pollution and high in efficiency, the obtained strengthened nickel-based single crystal alloy can be widely applied to the fields such as aerospace engine hot end parts and nuclear energy equipment which have strict requirements for high-temperature oxidation resistance, the reliability of related parts is greatly improved, and the service life of the related parts is greatly prolonged.

The invention provides a solar cell, a photovoltaic module, a power generation device, a power utilization device and a passivating agent. The solar cell comprises a first electrode, a second electrode and a light absorption layer arranged between the first electrode and the second electrode. The solar cell further comprises a passivation layer arranged on at least one surface of the light absorption layer, and the passivation layer comprises a passivating agent. And / or the light absorption layer comprises a passivating agent; wherein the passivating agent comprises one or more of compounds as shown in a formula (I), a formula (II) or a formula (III). The solar cell of the present application has improved photoelectric properties and stability.

The application belongs to the field of laser advanced manufacturing technology, and particularly relates to a method for connecting flat holes by pulse laser impact, a device thereof and application. The method for connecting flat holes by pulse laser impact comprises the following steps: placing bottom die, lower layer plate with sandglass-shaped through hole, upper layer plate, absorbing layer and constraint layer in sequence from bottom to top; clamping and fixing each layer by using a workpiece clamping system; placing the sandglass-shaped through hole region at the center of the pulse laser spot; under the pressure of the pulse laser impact wave, the upper layer plate is plastically deformed at high strain rate and impacts the upper inclined surface of the sandglass-shaped through hole of the lower layer plate, so that high-speed shear deformation occurs, thereby generating a metallurgical welding effect; with the continuous deformation of the upper layer plate, when the upper layer plate flows into the cavity of the sandglass-shaped through hole, an interlocking structure with small upper part and large bottom part is formed between the upper layer plate and the lower inclined surface of the sandglass-shaped through hole of the lower layer plate, thereby generating a mechanical riveting effect; the method provided by the application is used for welding and riveting of thicker or larger-thickness-difference plates.

The invention discloses a trans-perovskite solar cell and a preparation method thereof. The trans-perovskite solar cell comprises a conductive substrate, a hole transport layer, a passivation layer, a perovskite absorption layer, an electron transport layer and a back electrode layer which are arranged in sequence, the hole transport layer is made of nickel oxide; the passivation layer is made of cerium oxide, and the thickness of the passivation layer is 2-5nm; the light incidence direction of the solar cell is from one side of the conductive substrate to one side of the back electrode layer. Ce < 3 + > in cerium oxide is preferentially combined with dangling bonds on the surface of NiOx to form Ce-O-Ni bonds, so that interface defects are eliminated; the cerium oxide energy level is located between the perovskite and the hole transport layer, so that an energy level buffering effect is achieved, and the photoelectric conversion efficiency is improved; the Ce < 3 + > / Ce < 4 + > valence state conversion characteristic of cerium oxide can efficiently absorb and convert ultraviolet photons and prevent the ultraviolet photons from damaging a perovskite lattice structure; the fluorite structure of CeO gamma forms an ion diffusion barrier to block Ni < 2 + > from migrating to a perovskite layer and protect the perovskite structure.

The invention provides a photoelectric detection chip and a preparation method thereof, a photoelectric detector and electronic equipment, the photoelectric detection chip comprises a substrate, a first doping layer, a second doping layer, an intrinsic absorption layer, a micro-nano structure, a first electrode and a second electrode, the first doping layer is arranged on the surface of the substrate along the thickness direction of the substrate, and the second doping layer is arranged on the surface of the substrate; the intrinsic absorption layer is located between the first doping layer and the second doping layer, the multiple micro-nano structures are arranged in an array mode in the direction perpendicular to the thickness direction of the substrate, so that at least part of incident light is limited in the intrinsic absorption layer, the absorption efficiency of the intrinsic absorption layer on the incident light is improved, more electrons and holes can be generated conveniently, and the light emitting efficiency is improved. The responsivity of the photoelectric detection chip is improved; meanwhile, the micro-nano structure penetrates through the first doping layer, the intrinsic absorption layer and the second doping layer, so that electrons and holes move in the thickness direction, the transition distance and the transition time of the electrons and the holes are shortened, and the bandwidth of the photoelectric detection chip is improved.

The invention discloses a device and method for monitoring the state of a laser shock peening absorption layer, and relates to the technical field of surface strengthening, and the device comprises a visual image sensor array, an image preprocessing module, an image analysis module and a state evaluation module. The visual image sensor array is used for acquiring visible spectrum images and near-infrared band images of a laser shock peening processing area from multiple angles; the image pre-processing module is used for pre-processing the acquired images to obtain pre-processed images at different angles; the image analysis module is deployed with an image recognition model based on a ResNet-UNet hybrid architecture and an attention mechanism, and is used for recognizing the preprocessed image to obtain an image analysis result; and the state evaluation module is used for evaluating by adopting a multi-threshold judgment mechanism according to the image analysis result to obtain an evaluation result. The state change of the absorption layer in the laser shock peening process can be monitored in real time, the damage condition can be found in time, and the stability and consistency of laser shock peening machining are effectively improved.

The invention discloses a perovskite solar cell and a preparation method thereof, and relates to the technical field of solar cells. A perovskite solar cell conductive substrate; the hole transport layer is arranged on one side of the conductive substrate; the hole selection layer is arranged on one side, far away from the conductive substrate, of the hole transmission layer; the perovskite absorption layer is arranged on one side, far away from the conductive substrate, of the hole selection layer; wherein the hole transport layer comprises an inorganic hole transport layer and an interface modification layer, the interface modification layer is arranged between the inorganic hole transport layer and the hole selection layer, and the interface modification layer has a hydroxyl nano capillary structure, so that the solution wettability of the surface of the hole transport layer is improved; the binding force between the hydrophilic group in the material of the hole selection layer and the hole transmission layer is improved, and the interface recombination and voltage loss between the hole transmission layer and the hole selection layer can be reduced.

The application discloses a kind of based on selective spectral regulation agricultural photoelectric conversion film synthesis method and application, belong to the cross field of agricultural technology and new energy.It is quantum dot as core spectral selective absorption material in the synthesis method, by the standardization steps of substrate pretreatment, transparent electrode preparation, photoelectric conversion layer coating, quantum dot layer integration, back electrode evaporation and packaging, the functional film comprising "substrate-transparent electrode-photoelectric conversion layer-quantum dot spectral selective absorption layer-back electrode" is prepared.The quantum dot layer can efficiently absorb the ultraviolet light, green light and near-infrared light with low photosynthesis utilization rate of plant, and energy is transferred to photoelectric conversion layer to realize power generation;At the same time, the transmittance of blue light and red light necessary for plants is greater than or equal to 85%.The synthesis process of the application has strong compatibility and high repeatability, solves the contradiction between power generation and planting in traditional "agri-photovoltaic", realizes light energy hierarchical utilization and agri-photovoltaic synergy, and can be widely applied to greenhouse, greenhouse, plant factory and other agricultural facilities cover.

The application belongs to the field of turbine blade thermal barrier coating of an aero-engine. Specifically, it is a structure design, a preparation method and a prepared coating of a double-layer radiation-resistant thermal barrier coating with a high-reflection layer and a high-absorption layer. The coating comprises a high-absorption layer and a high-reflection layer. The high-absorption layer can absorb part of the energy of photon radiation and re-emit it into the environment, while relying on a cooling gas film to quickly remove heat. Part of the energy of the photon radiation is reflected by the high-reflection layer again to the high-absorption layer after passing through the high-absorption layer, and the process of absorption-emission-cooling gas film heat dissipation is repeated. Within a set temperature range, the absorption rate of the high-absorption layer is determined based on the temperature difference requirement between the inner and outer surfaces of the thermal barrier coating, and the high-absorption layer material is determined based on the absorption rate. The application greatly reduces the radiation heat flow penetrating the coating, avoids the direct heating of the high-temperature alloy by infrared radiation, and significantly improves the heat insulation capacity of the thermal barrier coating and the service life of the turbine blade.

Provided is an optical instrument capable of obtaining desired polarization characteristics. The optical instrument is an optical instrument provided with a light source, an incident-side polarization element, a light modulation element, an exit-side first polarization element, and an exit-side second polarization element. The exit-side first polarization element has a wire grid structure and is provided with a plurality of convex portions arranged separately from each other at a pitch shorter than the wavelength of light of a wavelength band used by the light source on one surface of a transparent substrate. The rotation angle of the transmission axis of the exit-side first polarization element with respect to the transmission axis of the incident-side polarization element is within ±8.5°. The exit-side second polarization element has a wire grid structure and is provided with a plurality of convex portions arranged separately from each other at a pitch shorter than the wavelength of light of a wavelength band used by the light source on one surface of a transparent substrate. The convex portions are lattice-shaped convex portions extending in a predetermined direction. The lattice-shaped convex portions sequentially have a reflection layer, a dielectric layer, and an absorption layer from the transparent substrate side. The rotation angle of the absorption axis of the exit-side second polarization element with respect to the absorption axis of the incident-side polarization element is within ±0.7°.

The invention discloses an absorption cut-off wavelength adjustable InGaAs photoelectric detector and a preparation method and application thereof. According to the InGaAs photoelectric detector, an N-type InP buffer layer, an N-type absorption layer with gradually-changed components, an N-type InP window layer and an unintentionally-doped InP cover layer are sequentially grown on an N-type InP substrate. According to the invention, the doping modulation is carried out on the N-type absorption layer with gradually-changed components, so that the modulation of the depth of a depletion region of the gradually-changed absorption layer in a relatively wide voltage interval is realized, the modulation precision of wavelength / voltage (nm / V) is improved, and the tunable precision of the absorption cut-off wavelength of the detector is enhanced.

Disclosed in the present application are a solar cell and a preparation method, a photovoltaic device, an electric device and a power generation device. The solar cell comprises: a first electrode, a first light-absorbing layer, a composite layer, a second light-absorbing layer and a second electrode, which are sequentially stacked, wherein the first light-absorbing layer is arranged between the first electrode and the composite layer, the second light-absorbing layer is arranged on the side, away from the first light-absorbing layer, of the composite layer, and the second electrode is arranged on the side, away from the composite layer, of the second light-absorbing layer. The composite layer comprises an amorphous oxide, and the amorphous oxide comprises an indium gallium zinc oxide. By designing that the composite layer comprises an amorphous oxide, the indium gallium zinc oxide is in an amorphous state, and the amorphous state is a crystal structure lacking of long-range order, such that the migration path of carriers in the material becomes complex and discontinuous, and the lateral migration of carriers in the composite layer is reduced, which is beneficial for improving the performance of the solar cell.

The invention discloses a long-wave infrared detector based on electric field intensity distribution regulation and control and a preparation method, and relates to the technical field of semiconductors, the long-wave infrared detector comprises a substrate, a bottom contact layer, a hole barrier layer, an absorption layer, an electron barrier layer and a top contact layer which are sequentially arranged from bottom to top; wherein the bottom contact layer and the hole barrier layer adopt an InAs / GaSb / AlSb / GaSb superlattice structure; the absorption layer, the electron barrier layer and the top contact adopt an InAs / GaSb superlattice structure; the doping concentration of the absorption layer is greater than the doping concentration of the hole barrier layer and the electron barrier layer. The doping concentration of the absorption layer is set to be greater than that of the barrier layer, so that the width of a depletion region of the absorption layer is reduced, the depletion region deviates towards the barrier layer, the probability of SRH recombination is reduced, G-R current can be effectively inhibited, and the overall dark current level is reduced.

The application discloses a high-transmittance absorption type color matching filter, a preparation method and a three-channel filter set. The method comprises the following steps: cleaning, drying and surface activation treatment of a transparent substrate; preparing at least two absorption layer coating liquids with different spectral absorption characteristics according to the spectral characteristics of a target matching waveband; layer-by-layer coating and solidification of the coating liquids on the surface of the transparent substrate to sequentially form 2-5 absorption sub-layers, so as to obtain a composite absorption film; and depositing a transparent dielectric layer on the surface of the composite absorption film as a hard protective layer, so as to obtain the filter. The application also provides a high-transmittance absorption type color matching filter prepared by the method and a three-channel color matching filter set comprising X, Y and Z three-channel filters. The application is used for solving the problems of low matching precision and low transmittance of the existing color matching filter.

The invention belongs to the field of projection display, and discloses a rear projection screen, which comprises an imaging layer, a black light absorption layer and a zigzag microstructure layer, the black light absorption layer is composed of a first black light absorption layer and a second black light absorption layer; the first black light absorption layer comprises a plurality of first black light absorption strips, the second black light absorption layer comprises a plurality of second black light absorption strips, and the first black light absorption strips and the second black light absorption strips are orthogonally stacked and arranged; the distribution distance between every two adjacent first black light absorption strips is increased or the distribution distance between every two adjacent second black light absorption strips is increased from the transverse center line / the vertical center line of the screen to the edges of the two ends. According to the rear projection screen, more projection light rays are absorbed in the central area of the screen and less or no projection light rays are absorbed in other areas by setting the distribution distance between the first black light absorption strips and the second black light absorption strips, so that the brightness difference between the central area of the projection screen and the other areas is reduced, and the brightness of the projection screen is improved. And the rear projection screen with high brightness uniformity is obtained.

The invention discloses a composite lens display device and system capable of resisting ambient light interference. The device is sequentially provided with a first lens, a light absorption layer and a second lens along a light path, a light through hole matched with an effective light wave band of a display system is formed in the light absorption layer, the aperture size of the light through hole is accurately set according to the divergence angle of the effective light, the wave band of the light through hole is matched with the aperture, and only the effective light of the display system is allowed to pass through. Compared with an existing film coating scheme, the anti-reflection film is not limited by the narrow effective wave band of the anti-reflection film, wider environment light spectrums can be covered, and the problem that environment light inhibition is not comprehensive is solved. And meanwhile, the light through hole is only opened for effective light rays, so that the effective light rays cannot be attenuated, and the display brightness is prevented from being lost. In addition, the processing technology of the light through hole is simple, the processing difficulty and the energy consumption in the production process are reduced, and the overall production cost is further controlled.

The invention relates to a method for reconstructing an interface state of a perovskite light absorption layer and an electron transport layer based on molecular bridge engineering and application of the method in a solar cell, and belongs to the field of photoelectric materials and devices. The method mainly comprises the following steps: dissolving interface modified micromolecules (a compound simultaneously containing carbonyl, sulfonyl or nitryl strong electron withdrawing groups and benzene rings, pyridine or thiophene aromatic groups) to obtain an interface modified solution, spin-coating the interface modified solution on a perovskite thin film, annealing, and depositing a fullerene electron transport layer to obtain the fullerene electron transport layer. And the perovskite light absorption layer / fullerene electron transport layer interface can be reconstructed. According to the method, perovskite defects can be passivated, distribution of the fullerene derivative electron transport layer is dispersed, and interface adsorption is enhanced. A solar cell is prepared based on the modified perovskite light absorption layer / fullerene electron transport layer, and the photoelectric conversion efficiency and the working stability of the device are obviously improved.

The invention discloses a fine simulation method of a CdTe-based II-VI group compound thin film solar cell and a cell structure designed based on the method. According to the method, a physical model of a CdTe-based battery is established through numerical simulation, then the energy band structure of a carrier transport layer is systematically optimized, and the quantitative criteria that a hole transport layer needs to meet the requirements that the Fermi energy level is lower than that of an absorption layer and the hole transport layer has enough positive conduction band offset and an electron transport layer needs to have a wide band gap and moderate positive conduction band offset are determined. And for the optical layer, the optimal thickness of the antireflection layer is determined, the enhancement effect of the optical path gain of the textured structure on optical absorption is quantified, and the maximization of the light capture efficiency is realized. According to the method, through electrical-optical coupling simulation, the CdTe-based solar cell structure of which the conversion efficiency is remarkably improved can be accurately predicted and guided to be designed, the defects that a traditional experiment is high in trial and error cost and long in period are effectively overcome, and a reliable theoretical design and optimization tool is provided for research and development of a high-efficiency and low-cost CdTe-based solar cell.

The invention discloses a solar cell, a preparation method thereof and an electric device. The solar cell comprises a substrate, a hole transport layer, a perovskite light absorption layer, an electron transport layer and an electrode which are stacked. Wherein the material of the hole transport layer comprises a self-assembled monomolecular material and a product obtained by carrying out nucleophilic substitution reaction on a functional material, and the functional material comprises a nucleophilic group substituted C5-C20 aromatic compound; the self-assembled monomolecular material comprises an aromatic compound with an electrophilic central group, and the nucleophilic group and the electrophilic central group are subjected to the nucleophilic substitution reaction. According to the material of the hole transport layer in the solar cell, halogen in the self-assembly monomolecular material and the functional material is replaced by nucleophilic functional groups, the molecular dipole moment and an interface built-in electric field are enhanced, the self-assembly monomolecular material is prevented from being agglomerated, a uniform and compact hole transport network is formed, and the performance of the solar cell is improved.

The invention relates to the technical field of solar cells, in particular to a solar cell and a preparation method thereof, an anti-reflection layer, a power utilization device and a power generation device. The solar cell is sequentially provided with the substrate layer, the first electrode, the light absorption layer and the second electrode in the light incidence side direction, light rays sequentially pass through the substrate layer and the first electrode and then reach the light absorption layer, the anti-reflection layer is arranged on one side or two sides of the substrate layer, the anti-reflection layer is made of metal oxide, and the solar cell can improve the light utilization rate.

In a piezoelectric element in which a lower electrode, a piezoelectric layer formed of a perovskite-type complex oxide, and an upper electrode are laminated in a laminating direction, the upper electrode has a first hydrogen absorbing layer that absorbs hydrogen. The upper electrode of the piezoelectric element preferably has a second hydrogen absorbing layer different from the first hydrogen absorbing layer. In the piezoelectric element, the film thickness of the first hydrogen absorbing layer is preferably thicker than the film thickness of the second hydrogen absorbing layer in the laminating direction.

This semiconductor light-receiving element (100) is provided with: an n-type InP substrate (1); an n-type semiconductor layer (2) formed on the n-type InP substrate (1); a multiplication layer (3) which is formed on the n-type semiconductor layer (2), has a layer thickness of 40 nm or more and 170 nm or less, and comprises an InAlAs digital alloy structure in which InAs layers and AlAs layers are alternately laminated; a p-type electric field relaxation layer (4) formed on the multiplication layer (3) and comprising InP or InAlAs; and an InGaAs light absorption layer (5) formed on the p-type electric field relaxation layer (4).

The invention relates to the technical field of semiconductor photoelectric devices, and discloses a GeSe / Si heterojunction photoelectric device and a preparation method thereof, the GeSe / Si heterojunction photoelectric device comprises a bottom electrode, an n-type silicon substrate, a GeSe layer and a top electrode; wherein the n-type silicon substrate and the GeSe layer form a Van der Waals heterojunction, the whole GeSe / Si heterojunction photoelectric device is of a sandwich structure, the bottom electrode is in contact connection with the n-type silicon substrate, and the top electrode is in contact connection with the GeSe layer. The GeSe / Si Van der Waals heterojunction-based high-performance photoelectric device with a sandwich structure and an II-type energy band structure is designed and prepared, due to the light transmission of the Au / ITO top electrode, GeSe with a high light absorption coefficient is used as a light absorption layer, a large number of photon-generated carriers can be generated, and the photoelectric device can be applied to the field of photoelectric devices. A built-in electric field and an II-type energy band structure of the GeSe / Si heterojunction can quickly separate photon-generated carriers to form light current, so that high responsivity of 29.8 A / W, high quantum efficiency of 6959.7% and quick light response time of 8.5 / 23.7 us are realized.

A solar cell and a manufacturing method therefor, an electric device, and a power generation device. The solar cell at least comprises a first electrode layer (11), a light absorption layer (30), and a second electrode (13), the light absorption layer (30) comprises a perovskite material, the first electrode layer (11) comprises a main body layer (111) and a modification layer (112), the modification layer (112) is located between the main body layer (111) and the light absorption layer (30), the main body layer (111) comprises a metal, the modification layer (112) is conductive, and the modification layer (112) comprises one or more of a metal nitride and a metal sulfide. The modification layer (112) in the first electrode layer (11) is not only conductive but also blocks diffusion of metal ions from the main body layer (111) toward the light absorption layer (30), thereby reducing corrosion of the perovskite material in the light absorption layer (30) by the metal ions, protecting the perovskite material, and reducing degradation of the perovskite material. The interfacial bonding between the modification layer (112) and the main body layer (111) is strong, thereby improving the reliability of the first electrode layer (11) in a solar cell device.

This invention discloses a visible transparent, ultra-wideband microwave absorption structure, comprising, from top to bottom, a visible transparent spatial shielding layer, an impedance-gradient absorption layer, and a total reflection bottom layer. The spatial shielding layer is highly transparent to the microwave band. The impedance-gradient absorption layer is composed of multiple layers of low-dielectric-constant transparent dielectric substrates and an array of transparent conductive patterns disposed thereon, stacked alternately. The total reflection bottom layer is totally reflective to the microwave band. By precisely designing the gradient period and equivalent resistance of the multilayer transparent conductive pattern array, and utilizing the electromagnetic coupling and multi-point resonance mechanism of the upper and lower layers, this invention achieves ultra-wideband microwave strong absorption of more than 90% in the 1-40 GHz frequency band at the subwavelength scale, breaking through the bandwidth limitation bottleneck of traditional microwave absorbing structures; and it also possesses excellent visible light transparency characteristics.

The invention discloses a high-absorptivity absorption layer of a pyroelectric chip, a preparation method and application thereof. The preparation method comprises the following steps: (1) mixing multi-walled carbon nanotubes, a binder, deionized water and absolute ethyl alcohol, and performing ultrasonic treatment to form an absorption layer dispersion liquid; (2) dispensing an absorption layer dispersion liquid on the surface of the pyroelectric chip, and then uniformly depositing and preparing an absorption layer film on the surface of the pyroelectric chip by utilizing mass transfer motion of a Marangei effect; and (3) drying and curing the absorption layer film by using a vacuum drying oven. Compared with the full-wave band absorption rate (about 50-60%) of a traditional Cr: Ni metal film absorption layer, the absorption rate of the absorption layer reaches up to 90% or above, and the adhesive force of the absorption layer on the target surface is greatly improved by optimizing the binder on the premise that the absorption rate of the absorption layer is not affected. The absorption layer has the advantages of being uniform, high in absorption rate, high in mechanical robustness, easy to prepare and the like, the performance of the pyroelectric infrared detector based on the absorption layer is improved by 40%, and the application prospect is wide.