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4161results about How to "Simple process" patented technology

Method for recycling metal oxide from waste flue gas denitration catalyst

The invention discloses a method for recycling a metal oxide from a waste flue gas denitration catalyst, comprising the following steps of: crushing the waste flue gas denitration catalyst to carry out pre-roasting pretreatment at high temperature; adding Na2CO3 into the waste flue gas denitration catalyst according to the proportion, mixing, pulverizing and roasting at high temperature to obtain a sintering block; crushing the sintering block and putting the crushed sintering block into hot water, and stirring and lixiviating to obtain titanate; adding sulphuric acid into the titanate, filtering, water-washing and roasting to obtain TiO2; adding the sulphuric acid into the lixiviated filtering liquid to regulate a pH value to 8.0-9.0; adding excessive NH4Cl for vanadium precipitation; decomposing NH4VO3 obtained from filtering at high temperature to prepare a V2O5 product; adding hydrochloric acid into the filtering liquid subjected to the vanadium precipitation to regulate a pH value to 4.5-5.0; adding CaCl2 for molybdenum and tungsten precipitation; treating the CaM0O4 and CaWO4, obtained from filtering, with the hydrochloric acid and roasting to obtain MoO3 and WO3. The method of the invention has the advantages of simple process and apparatus, high recycling efficiency, good product technical data, large treatment capacity and the like.
Owner:HUADIAN ELECTRIC POWER SCI INST CO LTD

Electric vehicle charging station sequential charging control method based on dynamic time-of-use electricity price

ActiveCN103683424ASimple processEnsure fairness
The invention provides an electric vehicle charging station sequential charging control method based on a dynamic time-of-use electricity price. According to the method, a charging time-of-use electricity price preferential period is obtained through calculation according to the charging requirement of electric vehicles in a charging station and the maximum charging load of a power grid and is provided for clients, and whether charging is started immediately or charging is started till the electricity price becomes lower is selected by the clients themselves so that the purpose of coordination control over sequential charging of the electric vehicles in the charging station can be achieved. By means of the method, it is effectively facilitated that the electric vehicles in the charging station are charged during a night valley electricity price period, and accordingly economic benefits of the electric vehicle station can be improved. Meanwhile, the charging peak load of the charging station can be effectively controlled, and the negative effect of electric vehicle charging on the power grid is reduced to the maximum. A calculation model is simple, computational efficiency is high, and the requirement for hardware environment of a control system is low; because the clients make decisions by themselves once the electricity price is issued at one time, charging can be continuous and reliable, and the negative effect of frequent on-off of chargers in an existing sequential charging strategy on the service life of batteries and the chargers is effectively reduced as well.
Owner:TSINGHUA UNIV +3

Method for manufacturing silicon photoelectric diode

The invention provides a method for manufacturing a silicon photoelectric diode, which belongs to the field of manufacturing semiconductor devices. The invention particularly relates to the method for manufacturing the silicon photoelectric diode. The method comprises the following steps of: adopting an insulator upper silicon wafer as a substrate, wherein the insulator upper silicon wafer comprises a support silicon chip, a silicon dioxide buried layer and a device layer; processing an isolated groove of a closed ring first on the device layer by adopting a dry etching process; growing a silicon dioxide layer with a certain thickness on the upper surface of the device layer of the insulator upper silicon wafer; performing ion implantation doping on the device layer by penetrating the silicon dioxide layer to obtain a P type doped region and an N type doped region; and growing a titanium metal layer and an aluminum metal layer with certain thicknesses on the upper surface of the device layer successively by adopting a sputtering method, and performing photoetching to form a positive electrode and a negative electrode to finally obtain a silicon photoelectric diode structure. The method for manufacturing the silicon photoelectric diode has the advantages of simple process, high reliability, good repeatability and stability, and can be integrated with other devices.
Owner:DALIAN UNIV OF TECH

Preparation method of powder injection molded feeding material

ActiveCN104227003AThe preparation process cycle is shortSimple process
The invention discloses a preparation method of a powder injection molded feeding material, which is applied to MIM (Metal Power Injection Molding) and CIM (Ceramic Power Injection Molding). The method comprises the following steps of S1, pre-treating, i.e. crushing an organic macromolecule polymer serving as a component of an adhesive into the powder with the same grain size as that of inorganic material powder to be mixed; S2, heating the inorganic material powder to the temperature at which the adhesive can be melted; S3, adding the adhesive into the pre-heated inorganic material powder to be mixed, so that the inorganic material powder and the adhesive are pre-felted into a block, wherein the adhesive comprises the organic macromolecule polymer which is treated in the step 1; S4, extruding the block to form particles, i.e. feeding the material treated in the step 3 into an extruder, and plasticizing, extruding and pelletizing the material to manufacture the powder injection molded feeding material. Due to the fact that the organic macromolecule polymer in the adhesive is crushed before mixing materials, after being added into the pre-heated inorganic material powder, the adhesive can be quickly melted and felted with the powder to form the block, the technical period is shortened, the energy consumption is reduced, and the low-melting point adhesive is prevented from being degraded and volatilized.
Owner:DONGGUAN HUAJING POWDER METALLURGY

Ammonium polyphosphate, montmorillonite nano complex and preparation thereof

The invention relates to an ammonium polyphosphate and montmorillonite nano compound and a preparation method thereof, which belong to the phosphorous compound preparation, composition, modification and crystalline control field. The method for preparing the nano compound comprises the following steps: montmorillonite is added during the preliminary stage of the process of general preparation of ammonium polyphosphate; ammonia is passed through when the temperature is raised to between 150 and 300 DEG C; heat preservation is performed when the temperature is raised to between 300 and 350 DEG C; and then the ammonium polyphosphate and montmorillonite nano compound are obtained after continuous ammoniation for 30 to 200 minutes. The preparation method controls the purity of an I-type polyphosphoric acid in the product through addition of a specific amount of the montmorillonite; the ammonium polyphosphate completely off a silicate slice of the montmorillonite; and nano-dispersion is formed in the ammonium polyphosphate, and then the ammonium polyphosphate and montmorillonite nano compound is obtained. The nano compound reduces the water solubility of the ammonium polyphosphate, has the function of improving the flame-retardant effect in inflaming retarding of polymer materials, and has the advantages of simple preparation technology and raw materials and low cost.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY
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