340 results about "Epitaxial thin film" patented technology

Disclosed is a natural-superlattice homologous single-crystal thin film, which comprises a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the a formula: M¹M²O₃ (ZnO)_m, wherein M¹ is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M² is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.

A wafer carrier enabling a wafer of different size and/or shape to be processed in a process tool configured for processing a wafer of a predetermined size and/or shape, wherein the wafer carrier has such predetermined size and/or shape and includes at least one recess therein having the different size and/or shape. The wafer carrier enables the use in a process tool (e.g., a semiconductor epitaxial thin film deposition reactor such as a single wafer reactor) of differently sized wafers than those for which the process tool is designed.

A light emitting element and a method for manufacturing the same are disclosed. In accordance with the element and the method, the dielectric thin film including the embossed pattern partially covering the sapphire substrate prevents damage of a sapphire substrate that occurs during a texturing of the sapphire substrate and a defect of an epitaxial thin film formed in a subsequent process.

The present invention provides an oriented substrate for forming an epitaxial thin film thereon, which has a more excellent orientation than that of a conventional one and a high strength, and a method for manufacturing the same. The present invention provides a clad textured metal substrate for forming the epitaxial thin film thereon, which includes a metallic layer and a copper layer bonded to at least one face of the above described metallic layer, wherein the above described copper layer has a {100}<001> cube texture in which a deviating angle Δφ of crystal axes satisfies Δφ≦6 degree. The clad textured metal substrate for forming the epitaxial thin film thereon has an intermediate layer on the surface of the copper layer so as to form the epitaxial thin film thereon, wherein the above described intermediate layer preferably includes at least one layer of a material selected from the group consisting of nickel, nickel oxide, zirconium oxide, rare-earth oxide, magnesium oxide, strontium titanate (STO), strontium barium titanate (SBTO), titanium nitride, silver, palladium, gold, iridium, ruthenium, rhodium and platinum.

The invention discloses a micro-resonant cavity LED chip with a substrate removed through chemical erosion and a preparation method thereof. The LED chip is an inversely installed film structure, and an epitaxial film only contains a p-GaN layer, a quantum well layer and an n-GaN layer. The lower surface of the p-GaN layer is a metallic reflection electrode with high reflectivity, a medium distributed Bragg reflection mirror is arranged on the upper surface of the n-GaN layer, a metallic reflection electrode and a medium DBR form a reflector of a resonant cavity, and the chamber length of the resonant cavity is order of magnitude of the wavelength. According to the preparation method, the substrate of an LED epitaxial wafer is removed through first photoelectric auxiliary chemical erosion and second chemical erosion, and then the LED epitaxial wafer is distributed on a heat conduction substrate through metallic bonding to obtain the micro-resonant cavity LED chip with substrate removed through chemical erosion. No extra material is introduced in the preparation method, pollution of the vacuum cavity of epitaxial growth equipment can be prevented, and the length of the resonant cavity can be reduced.

The invention discloses a gallium nitride homoepitaxy method based on in situ etching. The method comprises the following steps: 1) selecting a gallium nitride substrate and transferring the substrate into an MOCVD system; 2) conducting fast etching on the substrate for a short time; 3) conducting long-time slow etching after the fast etching to form hexagonal pyramid micro structures on the substrate surface; 4) laterally growing to merge the hexagonal pyramid micro structures; and 5) continuing to grow a high-quality GaN epitaxial layer on the merged film. The invention has the following advantages: through the control of components of in situ etching gas, impurities on the surface of the substrate are removed, while the hexagonal pyramid micro structures are formed on the surface of the substrate; and the micro structures are merged in a lateral epitaxial stage, so as to reduce the dislocation density of the epitaxial layer and finally obtain the gallium nitride epitaxial thin film with high quality. Formation of hexagonal pyramid micro structures on the surface of the substrate does not need additional process equipment; the method is economical, simple and practicable; and the epitaxial material has good performance. Therefore, the method provided by the invention is an effective solution for realizing high-quality and low-cost growth of GaN epitaxial thin film.

Embodiments of the invention generally relate to apparatuses and methods for producing epitaxial thin films and devices by epitaxial lift off (ELO) processes. In one embodiment, a method for forming thin film devices during an ELO process is provided which includes coupling a plurality of substrates to an elongated support tape, wherein each substrate contains an epitaxial film disposed over a sacrificial layer disposed over a wafer, exposing the substrates to an etchant during an etching process while moving the elongated support tape, and etching the sacrificial layers and peeling the epitaxial films from the wafers while moving the elongated support tape. Embodiments also include several apparatuses, continuous-type as well as a batch-type apparatuses, for forming the epitaxial thin films and devices, including an apparatus for removing the support tape and epitaxial films from the wafers on which the epitaxial films were grown.

The invention belongs to the field of III-family nitride semiconductor preparation technology, and relates to preparation of a low-dislocation-density AlN epitaxial film. The method of the invention is combined with two core key links of a patterned sapphire substrate and a pre-sputtering AlN nucleation layer. Based on the two core key links, a lateral epitaxial process is realized through metal organic chemical vapor deposition (MOCVD), thereby obtaining the AlN film with smooth surface and low dislocation density.

One embodiment of the present invention provides a solar cell. The solar cell includes a metallurgical-grade Si (MG-Si) substrate, a first layer of heavily doped crystalline-Si situated above the MG-Si substrate, a layer of lightly doped crystalline-Si situated above the first heavily doped crystalline-Si layer, a backside ohmic-contact layer situated on the backside of the MG-Si substrate, a second layer of heavily doped crystalline-Si situated above the lightly doped crystalline-Si layer, a first layer of dielectric situated above the second heavily doped crystalline-Si layer, a second layer of dielectric situated above the first dielectric layer, and front electrodes situated above the second dielectric layer.

A method and apparatus for the deposition of thin films is described. In embodiments, systems and methods for epitaxial thin film formation are provided, including systems and methods for forming binary compound epitaxial thin films. Methods and systems of embodiments of the invention may be used to form direct bandgap semiconducting binary compound epitaxial thin films, such as, for example, GaN, InN and AlN, and the mixed alloys of these compounds, e.g., (In, Ga)N, (Al, Ga)N, (In, Ga, Al)N. Methods and apparatuses include a multistage deposition process and system which enables rapid repetition of sub-monolayer deposition of thin films.

Provided are a ferroelectric epitaxial thin film for a microwave tunable device including a ferroelectric BaTiO₃ seed layer and an epitaxial (Ba_1-xSr_x)TiO₃ thin film, and a microwave tunable device using the same, whereby it is possible to improve the microwave response property of the microwave tunable device, and to enhance the quality of the wireless communication with ultra high speed, low electric power, low cost, and high sensitivity, by using the device of the present invention as an active antenna system, a satellite communication system, or a wireless sensor system,

The invention relates to a preparation method of gallium arsenide thin-film multijunction stacked solar cells. The preparation method is characterized by including the steps of firstly, allowing for reverse growth of an epitaxial layer to prepare a GaAs three-junction solar cell; secondly, bonding the cell prepared in the step 1 to a Si substrate; thirdly, stripping a Ge substrate; fourthly, adhering a low-cost substrate; and fifthly, stripping the Si substrate. The preparation method allows for epitaxial growth of a top cell and an intermediate cell prior to growth of a bottom cell, and accordingly the lattice subjected to epitaxial growth firstly is guaranteed to match with perfect epitaxial growth of the top cell and the intermediate cell; doping uniformity and film reliability in large-area epitaxial thin films are increased, and photoelectric conversion efficiency is further improved; by the use of the low-cost support substrate lower than Ge in specific weight, the weight of the cells is reduced, the power ratio of the solar cells is increased, the cost of the cells is reduced effectively, and application prospect of the III-V compound solar cells is improved greatly.

Epitaxial growth of gallium arsenide (GaAs) on a semiconductor material (e.g., Si) using quasi-van der Waals Epitaxy (QvdWE). Prior to GaAs growth a buffer layer (e.g., graphene) is deposited which relieves lattice mismatch/thermal expansion. The low energy of the graphene surface and the GaAs/graphene interface is overcome through an optimized growth technique to obtain an atomically smooth low-temperature GaAs nucleation layer. The disclosure can be applied to optimize epitaxial thin film growth of other materials, (e.g., III-V semiconductors, such as InP, GaSb) on Si using van der Waals buffer layers such as graphene.

Orientation degree and smoothness of a substrate surface better than those of conventional ones are provided in a textured substrate for epitaxial thin film growth. The present invention is a textured substrate for epitaxial film formation, including a crystal orientation improving layer made of a metal thin film of 1 to 5000 nm in thickness on the surface of the textured substrate for epitaxial film formation having a textured metal layer at least on one surface, wherein differences between orientation degrees (Δφ and Δω) in the textured metal layer surface and orientation degrees (Δφ and Δω) in the crystal orientation improving layer surface are both 0.1 to 3.0°. Further, when another metal different from the metal constituting this textured substrate crystal orientation improving layer is added equivalent to a thin film which is 30 nm or less, and subsequently is subjected to heat treatment, the smoothness of that surface can be improved. At this time, the surface roughness of the substrate surface becomes 20 nm or less.

The invention discloses a preparation method of a film LED chip device based on the gapless plane bonding; the method makes use of the smooth surface of an epitaxial wafer without isolated processing to prepare a permanent or temporary substrate; then laser beams are used for unit isolated processing of devices at the interface position between the epitaxial layer and the substrate so as to ensure the combination yield rate of the substrate and the epitaxial layer, thereby ensuring the film-remaining yield rate of the epitaxial thin film layer after laser stripping and also simplifying the traditional production process.

The embodiment of the invention discloses a method for preparing an AlN epitaxial film. The method includes: S1, depositing an AlN nucleation layer on a substrate by a sputtering method; S2, epitaxially growing an AIN template on the AlN nucleation layer by using an MOCVD growth method; S3, adopting a method of alternating low temperature and high temperature cycles, Continue to grow the AIN thin film. In the embodiment of the present invention, a layer of AlN is first sputtered by sputtering, and then the AlN film is grown by temperature modulation growth in MOCVD. Compared with the prior art, the AlN film with atomically smooth surface and low dislocation density can be prepared. .

Epitaxial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal grain boundary/interface microstructure, Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed of high-quality, dense, gas-tight, pinhole free sub-micron scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

The invention discloses a method for reducing defects in a silicon carbide epitaxial film. The method is executed in horizontal hot wall-type chemical vapor deposition (CVD) equipment and comprises the following steps of 1) substrate preparing, wherein a (0001) silicon-surface silicon carbide substrate deviating towards the (11-20) direction by 4 degrees is selected; 2) pre-growth baking, wherein a reaction chamber is subjected to radio frequency induction heating after a prepared sample is delivered to a reaction chamber and before gas is injected; 3) in-situ etching, wherein an improved hydrogen H2 in-situ etching technology is employed to perform pre-growth surface pre-treatment of the substrate; and 4) epitaxial growing, wherein a silicon carbide film starts to grow when the temperature rises to an epitaxial growth temperature. The advantages are that by using the method, the defects existing in the epitaxial film based on the (0001) silicon-surface silicon carbide substrate deviating towards the (11-20) direction by 4 degrees can be effectively reduced and the quality of the epitaxial film can be increased. The characteristics are that the method of the invention is simple and easy to implement; the epitaxial technology repeatability and consistency are good; the epitaxial film quality is high; and the method is suitable for mass production.

The invention discloses a method for testing the polarity of semiconductor crystal or epitaxial thin film material, comprising the following steps: irradiating the semiconductor crystal or epitaxial thin film material which is to be tested by utilizing circular polarized light, testing the current direction of the generated no-bias current; and judging the polarity of the semiconductor crystal or epitaxial thin film material which is to be tested according to the current direction of the no-bias current. In addition, the invention further discloses a system for testing the polarity of the semiconductor crystal or epitaxial thin film material. The test system in the invention can work under normal temperature and normal pressure, has high test accuracy, simple and speedy sample preparation, and high test speed, is non-destructive to the tested samples, and has low demand towards the testing personnel with easy operation; the test time of each sample is only 10 minutes; what is more, the whole set of test system is low in price and can greatly reduce test cost.