228 results about "Metallic bonding" patented technology

A method for forming a direct hybrid bond and a device resulting from a direct hybrid bond including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, capped by a conductive barrier, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads capped by a second conductive barrier, aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads capped by conductive barriers formed by contact bonding of the first non-metallic region to the second non-metallic region.

A semiconductor power module includes an insulated substrate mounting with a plurality of power semiconductor devices and a heat sink for radiating a heat generated from the plurality of power semiconductor devices, wherein the heat sink is integrally molded with a plurality of radiation fins on one surface of a planate base by forging work such that a metallic material filled into a female die of a predetermined shape is pressed by a male die of a predetermined shape, and the heat sink and the insulated substrate are bonded in metallic bonding with another surface opposite of one surface on which the radiation fins are formed with the base of the heat sink.

A method of making and the resulting non-metallic CMP conditioning pad comprising a non-metallic substrate and a single layer of abrasive particles bonded to the substrate by a non-metallic bonding medium. Preferred substrates include aluminum oxide and graphite. A bonding system employing finely powdered aluminum oxide particles mixed with a suitable adhesive is employed to bond the abrasive layer to the aluminum oxide substrate. Silicon carbide particles mixed into a compatible adhesive carrier including a polymer composition is preferred for bonding the abrasive particle layer to a graphite or carbide substrate.

A bonded device structure including a first substrate having a first set of metallic bonding pads, preferably connected to a device or circuit, and having a first non-metallic region adjacent to the metallic bonding pads on the first substrate, a second substrate having a second set of metallic bonding pads aligned with the first set of metallic bonding pads, preferably connected to a device or circuit, and having a second non-metallic region adjacent to the metallic bonding pads on the second substrate, and a contact-bonded interface between the first and second set of metallic bonding pads formed by contact bonding of the first non-metallic region to the second non-metallic region. At least one of the first and second substrates may be elastically deformed.

A thermoelectric device that realizes miniaturization and densification, an optical module incorporating the thermoelectric device, and their production method. N-type thermoelectric elements 51 and p-type thermoelectric elements 52 are arranged orthogonally and alternately, on the XY-plane, in a matrix consisting of at least four elements in total in a row and at least four elements in total in a column. All the thermoelectric elements 51 and 52 have a size of at most 250 mum in the X and Y directions. At most four thermoelectric elements nearest to an n-type thermoelectric element 51 are of p type, and at most four thermoelectric elements nearest to a p-type thermoelectric element 52 are of n type. The thermoelectric elements 51 and 52 are bonded through metallic bonding materials to electrodes 53 having the shape of a rectangle or a rounded rectangle formed on an insulating substrate 54.

The invention belongs to the technical field of chemical materials, and relates to a treating fluid and a method for preparing vanadium-zirconium composite conversion coatings with self-repairing performance on aluminum alloy surfaces through the same. The method includes the steps of firstly preparing the treating fluid containing fluorozirconate, metavanadate, sodium fluoride, nitrate, an accelerate and an additive; then putting an aluminum alloy after surface pretreatment into a working fluid made of the diluted treating fluid for 2min-10min; and finally subjecting the aluminum alloy to washing, drying and cooling to obtain the vanadium-zirconium composite conversion coatings. The preparation process is simple, heavy metals such as hexavalent chromium and nickel are not contained, the environment is friendly, the conversion coatings of the aluminum alloy after a conversion coating treatment are dense and high in binding force, metal ions in the conversion coatings can bond with base metal under a corrosion environment and provided with a certain self-repairing performance, and the treating technology of vanadium-zirconium conversion coatings can effectively replace chromate treatment on aluminum alloy surfaces.

A cable with a crimping terminal includes a cable including a conductor and an insulator including a plastic material, and the crimping terminal bonded to the conductor of the cable at a crimping portion by crimping connection. The conductor of the cable is bonded to the crimping terminal by a metallic bonding material at a crimping portion, and the metallic bonding material includes silver as a main component.

An abrasive article having a substrate, a tacking film overlying the substrate, abrasive particles comprising a coating layer bonded to the tacking film such that a bond between the coating layer and the tacking film defines a metallic bonding region, and a bonding layer overlying the abrasive particles and the tacking film,

The invention discloses a micro-resonant cavity LED chip with a substrate removed through chemical erosion and a preparation method thereof. The LED chip is an inversely installed film structure, and an epitaxial film only contains a p-GaN layer, a quantum well layer and an n-GaN layer. The lower surface of the p-GaN layer is a metallic reflection electrode with high reflectivity, a medium distributed Bragg reflection mirror is arranged on the upper surface of the n-GaN layer, a metallic reflection electrode and a medium DBR form a reflector of a resonant cavity, and the chamber length of the resonant cavity is order of magnitude of the wavelength. According to the preparation method, the substrate of an LED epitaxial wafer is removed through first photoelectric auxiliary chemical erosion and second chemical erosion, and then the LED epitaxial wafer is distributed on a heat conduction substrate through metallic bonding to obtain the micro-resonant cavity LED chip with substrate removed through chemical erosion. No extra material is introduced in the preparation method, pollution of the vacuum cavity of epitaxial growth equipment can be prevented, and the length of the resonant cavity can be reduced.

The invention relates to a coarsened-sidewall AlGaInP-base LED and a manufacture method thereof and belongs to the technical field of semiconductors. The method comprises steps of: bonding an epitaxial wafer on a permanent substrate by using a metallic bonding layer on the epitaxial wafer and a metallic bonding layer on the permanent substrate in order to form a bonded semi-finished product; removing a temporary substrate, a buffer layer, and a cutoff layer on the bonded semi-finished product in order to expose an ohmic contact layer; etching and patterning the ohmic contact layer, and manufacturing a n-type expansion electrode, a main electrode, and a back electrode; and etching a cutting channel at least reaching a p-GaP window layer on the periphery of the epitaxial layer of each LED chip, coarsening the surface and the sidewall of the epitaxial layer in order that the surface and the sidewall of the epitaxial layer are coarsened. The manufacture method is simple in technology, convenient in production, and capable of increasing electro-optical conversion efficiency, prolonging the service life of the LED, enlarging a visual angle, and improving the display effect of an LED screen.

The invention discloses a manufacturing method of a single intermetallic compound micro-interconnecting structure of a flip chip, relating to the manufacturing method of an intermetallic compound micro-interconnecting structure of the flip chip and aiming at solving the problem that micro-interconnection welding spots of the flip chip fracture at connecting interfaces among brazing solder alloys, intermetallic compounds and metallic bonding pads. The technical scheme I comprises the following steps of: manufacturing a chip metallic basic layer (a chip metallic bonding pad) and a surface layer on a metallic surface of the chip, and manufacturing a substrate metallic basic layer (a substrate metallic bonding pad) and a surface layer on a metallic surface of a substrate, wherein the chip and the substrate metallic surface are made of pure Sn; coating a soldering flux on the metallic surface of the chip and the metallic surface of the substrate; and inverting the chip to ensure that the chip metallic bonding pad corresponds to the substrate metallic bonding pad, pressing, heating, cooling, and forming the intermetallic compound micro-interconnecting structure of the flip chip. The technical scheme II is different from the technical scheme I in the following steps of: coating the soldering flux on the metallic basic layer of the chip and the metallic basic layer of the substrate and inverting the chip, wherein the metallic basic layer of the chip is in contact with the metallic bonding pad of the substrate by a Sn foil. The single intermetallic compound micro-interconnecting structure is applied to an electronic packaging structure.

The present invention provides a low temperature joining method that is compatible with multiple materials and results in a bond between joined structures without reducing the mechanical properties of the joined structures base materials. The method of the present invention includes the steps of contacting a first structure to a second structure; and directing particles of a metallic bonding material towards an interface between the first structure and second structure at a velocity to cause the particles of the metallic bonding material form a molecular fusion between the first structure and second structure.

The invention discloses a light emitting diode possessing a transparent extended electrode structure and a manufacturing method thereof. The light emitting diode comprises a permanent substrate, an epitaxial luminescent layer and a back electrode. Graphical processing is performed on an N-GaAs ohmic contact layer in the epitaxial luminescent layer. A back side of the permanent substrate is provided with the back electrode. On the permanent substrate, the permanent substrate is connected to the epitaxial luminescent layer through a first metal bonding layer and a second metal bonding layer. A mirror surface reflecting layer and a medium film layer are arranged between the second metal bonding layer and the epitaxial luminescent layer. An extended electrode made of a transparent material wraps an armoring layer and the N-GaAs ohmic contact layer in the whole epitaxial luminescent layer and forms electric contact with a graph on the N-GaAs ohmic contact layer. The extended electrode is provided with a main electrode. The light emitting diode and the method of the invention possess advantages that electrode shading can be avoided; current expansion uniformity is increased; luminous efficiency is improved; electrode reliability is increased; the light emitting diode is not easy to damage; reliability is good and the light emitting diode is suitable for mass production.

A light-emitting element including a phosphorescent organometallic complex is provided. The organometallic complex emits phosphorescence in the yellow green to orange wavelength range and has high emission efficiency and high reliability. Thus, the organometallic complex that exhibits phosphorescence is provided. The organometallic complex, in which nitrogen at the 3-position of a pyrimidine ring is coordinated to a metal, a carbazole skeleton is bonded to the 4-position of the pyrimidine ring, and the carbazole skeleton is bonded to the metal, is used as an emission center. The metal is preferably a Group 9 element or a Group 10 element, more preferably iridium.

A conductive structure and method of manufacturing therefor includes a plurality of stacked metal laminates secured to one another via an intermetallic bond made from a metallic bonding agent.

The invention provides an inverted laser chip based on an SiC substrate and a manufacturing method of the inverted laser chip. The inverted laser chip based on the SiC substrate comprises a conventional laser chip structure and the SiC substrate. The conventional laser chip structure sequentially comprises a substrate, a buffer layer, an N limit layer, an active area, a P limit layer, a P-type ohm contact layer, a current retaining layer and a metal ohm contact layer from bottom to top. A metal ohm contact layer is plated at the bottom of the SiC substrate, and a metal bonding layer is plated on the other side. The metal ohm contact layer of the conventional laser chip is bonded with the SiC substrate through the metal bonding layer of the SiC substrate. The N electrode metal layer is evaporated on the buffer layer, with original substrate being removed, of the conventional laser chip. The pole N of the manufactured SiC substrate is at the top, and the pole P of the manufactured SiC substrate is at the bottom. Compared with conventional lasers, the inverted laser chip based on the SiC substrate has the advantages of good radiation, good stability, long service life and the like.

The invention relates to a multijunction laminated solar cell and a manufacturing method thereof. The multijunction laminated solar cell comprises a cell unit laminated body (A) as well as a top electrode (12) and a back electrode (13) which are arranged on the top and bottom of the cell unit laminated body (A), wherein the cell unit laminated body (A) comprises a bottom-layer cell unit (11) and at least one upper-layer cell unit (10) connected to the top of the bottom-layer cell unit (11) in a laminating manner; the bottom-layer cell unit (11) comprises a substrate (3) and an epitaxial layer(4); the upper-layer cell unit (10) at least comprises an epitaxial layer (2); and the cell unit laminated body (A) can be obtained by performing direct bonding, metallic bonding or inversed welding processes on the bottom-layer cell unit (11) and the upper-layer cell unit (10). According to the invention, not only can the problem of unmatched crystal lattice of the cell unit laminated body (A) is solved, but also the overall working efficiency of the solar cell is improved.

A package for semiconductor image pickup device is provided. The package is fabricated by using flip chip bumping. During deposition process of forming a metallic bonding layer and a metal layer for plating, a surface of a semiconductor image pickup device is maintained at the range between room temperature and 200° C. in accordance with a first embodiment. A polymer layer for preventing stress from generating can absorb stress generated during the deposition process in accordance with a second embodiment. According to the present invention, a functional polymer layer on the surface of a semiconductor image pickup device can be prevent from being deteriorated in its properties and from transforming at its surface.

A well treatment fluid contains a surface modifying treatment agent having an anchor and a hydrophobic tail. The surface modifying treatment agent is an organophosphorus acid derivative. After the well treatment fluid is pumped into a well penetrating the subterranean formation, the anchor binds to the surface of the formation. The subterranean formation is a siliceous formation or a metal oxide-containing subterranean formation. The anchor bonds to a Si atom when the formation is a siliceous formation and to the metal of the metal oxide when the formation is a metal oxide-containing formation. After being bound to the surface of the formation, frictional drag within the well is reduced. This allows for faster recovery of formation fluids. The bonding of the surface modifying treatment agent onto the formation may further be enhanced by first pre-treating the formation with a non-aqueous fluid. By increasing the number of sites for the surface modifying treatment agent to bind onto the surface of the subterranean formation, productivity is improved.

A method for manufacturing nitride light-emitting device is disclosed, which fixes two metallic bonding layers together in order to bond a nitride lighting structure grown on a poor thermal conductivity substrate to a high thermal conductivity substrate, then removes the poor thermal conductivity substrate by means of chemical etching, dry etching, or mechanical abrading to thereby transfer the nitride lighting structure onto that high thermal conductivity substrate. Meanwhile, by taking advantage of forming ohmic contact between a transparent conductive layer and an N-type nitride epitaxial layer, the uniformity of current distribution can be significantly improved to thereby suppress light absorption effect and heighten the lighting efficiency of the light emitting device.

The invention relates to a gallium nitride schottky rectifier with a metal substrate and a production method thereof. The rectifier comprises a metal substrate, a metallic bonding layer and a gallium nitride schottky rectifier chip, wherein the metal substrate is used as a support substrate, the gallium nitride schottky rectifier chip comprises a gallium nitride epitaxial layer, a gallium nitride schottky electrode and an ohmic electrode, the gallium nitride epitaxial layer is bonded with the metal substrate through the metallic bonding layer, and the gallium nitride schottky electrode and the ohmic electrode are transversely arranged on the other side of the epitaxial layer relative to the metal substrate. When the gallium nitride schottky rectifier is produced, the ohimic electrode and a schottky contact electrode are produced on a front face of an epitaxial wafer successively, then a sapphire substrate on the other side of the epitaxial wafer is stripped off through lasers, and the metal substrate is bonded on the epitaxial wafer. The gallium nitride schottky rectifier can overcome the compatibility of the metallization process of the GaN schottky rectifier and the stripping process of the sapphire substrate, can solve the heat dissipation of devices by using the metal substrate with high heat conductivity as a support carrier and a heat sink and can effectively improve the performance and reliability of the devices.