Micro-resonant cavity LED chip with substrate removed through chemical erosion and preparation method thereof

An LED chip, chemical corrosion technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of chamber pollution of epitaxial growth equipment, reduce the quality of GaN thin films, etc., achieve high corrosion selection ratio, reduce equivalent resistance. Effect

Active Publication Date: 2017-11-21
SOUTH CHINA UNIV OF TECH
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  • Abstract
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Problems solved by technology

However, the introduction of new materials during the growth of epitaxial wafers will pollute the chamber of the epitax

Method used

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  • Micro-resonant cavity LED chip with substrate removed through chemical erosion and preparation method thereof
  • Micro-resonant cavity LED chip with substrate removed through chemical erosion and preparation method thereof
  • Micro-resonant cavity LED chip with substrate removed through chemical erosion and preparation method thereof

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Embodiment Construction

[0057] The specific implementation of the present invention will be further described below in conjunction with the accompanying drawings, but the implementation and protection scope of the present invention are not limited thereto.

[0058] Such as figure 1 Shown is a schematic cross-sectional view of a micro-sized resonant cavity LED chip with chemical etching and peeling off the substrate in a specific embodiment of the present invention. The chip is a disc with a diameter of 100 μm; Sheet heat conduction substrate 12, second bonding Cr / Ti / Au metal layer 82, first bonding Cr / Ti / Au metal layer 81, metal protective layer 62 of reflective electrode, Ni / Ag / Ni reflective electrode 61, p- GaN layer 5, quantum well layer 4, n-GaN layer 32 and SiO 2 / Ti 3 o 5 Medium DBR 9;

[0059] The first bonding Cr / Ti / Au metal layer 81, metal protection layer 62 of reflective electrode, Ni / Ag / Ni reflective electrode 61, p-GaN layer 5, quantum well layer 4, n-GaN layer 32 and SiO 2 / Ti 3 o...

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Abstract

The invention discloses a micro-resonant cavity LED chip with a substrate removed through chemical erosion and a preparation method thereof. The LED chip is an inversely installed film structure, and an epitaxial film only contains a p-GaN layer, a quantum well layer and an n-GaN layer. The lower surface of the p-GaN layer is a metallic reflection electrode with high reflectivity, a medium distributed Bragg reflection mirror is arranged on the upper surface of the n-GaN layer, a metallic reflection electrode and a medium DBR form a reflector of a resonant cavity, and the chamber length of the resonant cavity is order of magnitude of the wavelength. According to the preparation method, the substrate of an LED epitaxial wafer is removed through first photoelectric auxiliary chemical erosion and second chemical erosion, and then the LED epitaxial wafer is distributed on a heat conduction substrate through metallic bonding to obtain the micro-resonant cavity LED chip with substrate removed through chemical erosion. No extra material is introduced in the preparation method, pollution of the vacuum cavity of epitaxial growth equipment can be prevented, and the length of the resonant cavity can be reduced.

Description

technical field [0001] The invention relates to the field of resonant cavity LED chips, in particular to a resonant cavity LED chip with a micro-sized flip-chip thin-film structure that is chemically etched and peeled off a sapphire substrate and a preparation method thereof. Background technique [0002] The resonant cavity LED prepares mirrors at the upper and lower ends of the quantum well light-emitting layer, and enhances the mode density of the resonant frequency through the Fabry-Perot cavity, increases the rate of spontaneous emission, and improves the external quantum efficiency and modulation bandwidth of the device at the same time. Compared with ordinary LED chips, resonant cavity LEDs have the advantages of narrow spectral line width, good light output directionality, and good temperature stability. [0003] The luminous efficiency of a resonant cavity LED is inversely proportional to the cavity length. For ordinary commercial sapphire substrate GaN-based LED e...

Claims

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Application Information

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IPC IPC(8): H01L33/00H01L33/20H01L33/48H01L33/60H01L33/62
CPCH01L33/0075H01L33/20H01L33/48H01L33/60H01L33/62Y02P70/50
Inventor 黄华茂杨倬波王洪胡晓龙
Owner SOUTH CHINA UNIV OF TECH
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