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8results about How to "Reduce equivalent resistance" patented technology

A method for fabricating metal circuits on a ceramic substrate

ActiveCN118086827Bimprove bindingReduce equivalent resistanceVacuum evaporation coatingSputtering coating
This invention relates to a method for fabricating metal circuits on a ceramic substrate. The method involves surface treatment of aluminum nitride ceramics, selection of transition layers, and preparation of the crystal orientation of the metal layers. By fabricating a multilayer structure of insulating oxides, conductive oxides, and conductive metal layers, and introducing a Cu(111) layer, the conductivity of the thin-layer metal is enhanced. The method includes the following steps: Step 1: Cleaning the aluminum nitride ceramic substrate blank with nitric acid and / or deionized water, and performing a chemical reaction in an HF solution of appropriate concentration and at a heating temperature of appropriate degrees Celsius for a corresponding time period to prepare a buffer layer; Step 2: Preparing a multilayer structure of conductive oxides and / or conductive metal layers by magnetron sputtering; Step 3: After completing Step 2, photolithography is applied to the ceramic substrate to form a circuit pattern; Step 4: Electroplating the patterned circuit on the ceramic substrate to form an electrical connection surface layer; Step 5: Annealing the ceramic substrate after Step 4.
Owner:YUANLIWEI (SHENZHEN) TECHNOLOGY CO LTD

A solar cell device and a method for fabricating the same

PendingCN122373586ASolve the technical problems of sharp decline in efficiencyavoid resistanceOrganic solar cellPerovskite solar cell
The application relates to a solar cell device and a preparation method thereof, the device comprising a transparent substrate, a transparent front electrode, a first insulating layer, a photoelectric conversion structure layer, a metal back electrode, a second insulating layer and a front electrode lead-out electrode arranged in sequence; the second insulating layer, the metal back electrode and the photoelectric conversion structure layer are provided with a via hole penetrating to the surface of the transparent front electrode, the front electrode lead-out electrode extends into the via hole, is electrically connected with the transparent front electrode and is electrically isolated from the metal back electrode and the photoelectric conversion structure layer; the front electrode lead-out electrode is used for guiding the carriers collected by the transparent front electrode to the outer layer of the device. Compared with a traditional solar cell, the application breaks through the limitation of the device area on the efficiency, enables the organic solar cell and the perovskite solar cell to still maintain a high efficiency under the condition of area expansion, and provides a feasible technical path for the industrialized production of a large-area flexible solar cell.
Owner:TRULY SEMICON

A high mobility silicon carbide n-type ldmos device

ActiveCN115763562BLower on-resistanceIncreased current capabilityLDMOSTrench gate
The application discloses a high-mobility silicon carbide N-type LDMOS device with reduced on-resistance, which comprises an N-type substrate, a P-type epitaxial layer arranged on the N-type substrate, an N-type well region, a first P-type heavily doped region, a first N-type heavily doped region, a second P-type heavily doped region connected to a source, a second N-type heavily doped region connected to a drain arranged in the N-type well region, the first P-type heavily doped region, the first N-type heavily doped region and the second P-type heavily doped region being connected, an oxide layer arranged on the surface of the second N-type heavily doped region, the N-type well region, the first P-type heavily doped region, the first N-type heavily doped region, the second P-type heavily doped region and the P-type epitaxial layer, a polycrystalline silicon trench gate serving as a gate of the device and extending into the P-type epitaxial layer, and an N-type buried layer arranged in the P-type epitaxial layer, one end of the N-type buried layer being connected to a channel of the device and the other end being connected to the N-type well region.
Owner:SOUTHEAST UNIV +1

Control method and control device of air conditioner and air conditioner

PendingCN121804061Aincrease temperatureReduce equivalent resistanceMechanical apparatusControl theoryPwm signals
The invention relates to the field of electric appliances, and provides an air conditioner control method and device and an air conditioner. The method comprises the steps that a pulse width modulation (PWM) signal is output to an inverter of the compressor, so that current flows in from any phase of a three-phase winding of the compressor and flows out from the other two phases at the same time, and an oil pool is heated; acquiring the actual heating power of the motor winding in real time; according to the difference value between the actual heating power and the preset target heating power, the duty ratio of the PWM signal is dynamically adjusted, so that the actual heating power approaches the target heating power. An external heating element is not needed, so that the aging failure risk of the heating tape is avoided; meanwhile, the limitation that the iron loss heating power is low and the heating efficiency of the two-phase winding is insufficient is broken through, and the heating efficiency, the system reliability and the control precision are remarkably improved on the basis of multiplexing original hardware through three-phase winding cooperative heating and power closed-loop regulation and control.
Owner:QINGDAO HAIER AIR CONDITIONING ELECTRONICS CO LTD +2

A light-emitting diode and a light-emitting device

PendingCN122294663AReduce equivalent resistanceIncrease the number of leadsCurrent distributionElectrical connection
This application provides a light-emitting diode (LED) and a light-emitting device. A first electrode is formed on one side of the first semiconductor layer of the LED. The first electrode has multiple body portions distributed on opposite sides of the LED and multiple extension portions electrically connected to the body portions. The multiple extension portions include main extension portions and secondary extension portions distributed in a first direction and a second direction. This design increases the number of body portions of the first electrode and adaptively increases the number and distribution of the extension portions, thus shortening the current conduction distance, improving current spreadability, and making the current distribution of the LED more uniform. Simultaneously, the increased number of body portions correspondingly increases the number of leads between the LED and external circuits, thereby reducing the equivalent resistance of the LED and ultimately lowering the voltage of the LED package, reducing input power, and thus improving the photoelectric conversion efficiency of the LED.
Owner:TIANJIN SANAN OPTOELECTRONICS

Frequency modulation method of quartz crystal tuning fork and resonator

PendingCN122178858Areduce consumptionImproved frequency modulation toleranceImpedence networksConductive pasteTuning fork
This invention discloses a frequency tuning method and resonator for a quartz crystal tuning fork oscillator. The method includes: a coating step: cleaning the quartz crystal blank and depositing a base metal layer after cleaning; a coarse tuning step: repeatedly printing conductive paste in the tuning area of ​​the tuning fork arm and curing it to form a printed tuning layer, adjusting the frequency of the tuning fork oscillator to a preset frequency range; and a fine tuning step: performing an excitation test to obtain the current frequency F1, using a laser to perform targeted ablation on the printed tuning layer, stopping when the frequency reaches the target value F2, thus completing the frequency tuning of the quartz crystal tuning fork oscillator. This invention adopts a layered coating architecture, abandoning the full vacuum process, and using a stacked structure of "one-time vacuum coating (base conductive / reflective layer) + two-time printed coating (tuning weight-adding layer)," which solves the problem of material waste and achieves nanometer-level precise frequency locking.
Owner:SHENZHEN XINYIJING TECH CO LTD

Pixel unit, pixel array, image sensor and traffic device

PendingCN122601995Ashorten the pathFast charging and discharging
The application provides a pixel unit, a pixel array, an image sensor and a traffic device. The pixel unit comprises: a signal source circuit connected to a first reset power supply, configured to reset based on the first reset power supply and generate a voltage signal through photoelectric conversion; and a storage circuit connected to a second reset power supply and the signal source circuit, configured to reset based on the second reset power supply and store the voltage signal generated by the signal source circuit; wherein a signal path between the signal source circuit and the first reset power supply is independent of a signal path between the storage circuit and the second reset power supply. The application is used to reduce the charging and discharging time of the capacitor and improve the frame rate.
Owner:BYD CO LTD +1

Ce-α-MnO2 / CNTs nanowires and their preparation methods and applications; aqueous zinc-ion battery cathode sheets and their preparation methods; aqueous zinc-ion batteries.

PendingCN122276842Ahigh specific capacityReduce equivalent resistanceManganese sulphateNanowire
This invention relates to the field of cathode materials for aqueous zinc-ion batteries, and discloses a Ce-α-MnO2 / CNTs nanowire, its preparation method and application, an aqueous zinc-ion battery cathode sheet and its preparation method, and an aqueous zinc-ion battery. The preparation method of Ce-α-MnO2 / CNTs nanowires includes: first mixing multi-walled carbon nanotubes, trivalent cerium salt, and manganese sulfate in the presence of an inorganic solvent to obtain a mixture I; second mixing potassium permanganate solution with the mixture I to obtain product I; subjecting product I to a hydrothermal reaction to obtain product II; and drying product II to obtain Ce-α-MnO2 / CNTs nanowires. The Ce-α-MnO2 / CNTs nanowires of this invention, as a cathode material, have a high specific capacity, can improve the charge and discharge rate of aqueous zinc-ion batteries, and thus enhance the overall performance of aqueous zinc-ion batteries.
Owner:CHINA UNIV OF PETROLEUM (BEIJING)