83results about How to "Reduce equivalent resistance" patented technology

A method of forming a color filter touch sensing substrate integrates touch-sensing structures / elements of a touch panel into the inner side of the color filter substrate, which faces a thin film transistor substrate, and forms patterned assistant electrodes on the surfaces of the transparent sensing pads for decreasing the equivalent resistance of the touch-sensing structures / elements. Moreover, since an adjacent transparent conductive layer and an assistant electrode layer are patterned to form the transparent sensing pads and the patterned assistant electrodes, a simplified pattern-transferring process can be applied to the transparent sensing pads and the patterned assistant electrodes, or bridge structures can be formed from the assistant electrode layer for electrically connecting between some transparent sensing pads. Therefore, the forming process is simplified.

Provided is an electrical energy storage device including an electrode winding body, which includes a positive electrode generating electrons by oxidation and reduction, a negative electrode for absorbing the generated electrons, and separation layers for physically separating the negative electrode from the positive electrode, which are sequentially wound around a winding core, and an electrolyte provided between the positive electrode and the negative electrode, the electrical energy storage device including: a terminal plate for externally connecting the electrode winding body to an external electrode connecting member such as an external resistor; a cylindrical can for accommodating the electrode winding body connected to the terminal plate; and a conductive interconnecting member for connection between the terminal plate and polarity-leads on one side of the electrode winding body by a method selected from the group consisting of plasma-spraying, welding, soldering and adhesion using a conductive adhesive material. According to the present invention, in which an interconnecting member for reducing a difference in thickness between objects to be welded is employed, it is possible to prevent welding failure between the polarity-leads of the electrode winding body and the terminal plate, thereby improving high-rate discharge (large current discharge) efficiency.

A method of forming a color filter touch sensing substrate integrates touch-sensing structures / elements of a touch panel into the inner side of the color filter substrate, which faces a thin film transistor substrate, and forms patterned assistant electrodes on the surfaces of the transparent sensing pads for decreasing the equivalent resistance of the touch-sensing structures / elements. Moreover, since an adjacent transparent conductive layer and an assistant electrode layer are patterned to form the transparent sensing pads and the patterned assistant electrodes, a simplified pattern-transferring process can be applied to the transparent sensing pads and the patterned assistant electrodes, or bridge structures can be formed from the assistant electrode layer for electrically connecting between some transparent sensing pads. Therefore, the forming process is simplified.

The invention relates to a method for preparing a lacunaris carbon / nanometer oxide composite material used in an ultra capacitor electrode. The prepared material is capable of evenly dispersing a nanometer oxide into a lacunaris carbon substrate. When the ultra capacitor electrode is prepared by the material, with a combination of a double-electric-layer capacitor and a metal oxide pseudocapacitance, the electrode can has a higher unit capacitor and a carbon framework can provide a favorable conductive passage for nanometer metal oxide particles dipersed in the carbon framework to reduce an equivalent internal resistance of the capacitor, thereby the capacitor has a high power and power density.

The invention provides an array substrate, a touch screen, a drive method and a display device. The array substrate comprises a substrate, wherein a grid line, a data line, a first public electrode and a second public electrode are formed on the substrate; the second public electrode comprises transverse electrode groups positioned in the same row and metal jumper wires connected with the adjacent two transverse electrode groups in the same row; the first public electrode comprises longitudinal electrode groups; and a switch circuit conducted in a touch control scanning stage to enable the first public electrode and the data line to be connected in parallel is arranged between the first public electrode and the data line. During the touch control scanning stage, the switch circuit is conducted to enable the first public electrode and the data line to be connected in parallel, so that the equivalent resistance of the first public electrode is reduced, the signal-to-noise ratio of the first public electrode is indirectly increased, a voltage signal generated by coupling of a touch control sensing electrode can be more accurately monitored, and a touch point can be accurately positioned.

The invention discloses a display panel, and a manufacturing method thereof, and a display device, and belongs to the technical field of displaying. The display panel comprises a substrate, a first electrode, a light-emitting layer and second electrode which are orderly arranged on the substrate; an auxiliary electrode is arranged on at least one side of the second electrode; the positive projection of the auxiliary electrode on the substrate and an opening region of each pixel are non-overlapping; since the auxiliary electrode and the second electrode are equivalent to a parallel structure, the equivalent resistance of the auxiliary electrode and the second electrode after parallel connection is low, thereby effectively lowering the voltage drop after the current flows through the auxiliary electrode and the second electrode, and then guaranteeing the display uniformity of an OLED display panel. Since the positive projection of the auxiliary electrode on the substrate and the opening region of each pixel unit are non-overlapping, the transmission of the light cannot be shielded; therefore, the structure can be flexibly applied to the OLED display devices in different light-emitting types.

The invention belongs to the technical field of electronic circuits, and particularly relates to a low-dropout regulator with the high-power-supply-rejection-ratio characteristic. Compared with an existing similar LDO, the low-dropout regulator is characterized in that the scheme that a voltage follower is additionally arranged at a power tube grid end is adopted, a low-frequency pole at the power tube grid end in a traditional LDO structure is separated into two high-frequency poles, feed-forward and feedback bandwidths are expanded, a dynamically-biased super source follower serves as output of the voltage follower, equivalent resistance at the power tube grid end under heavy loads is greatly reduced, and the inhibition performance of the low-dropout regulator to high-frequency power source noise interference is improved. A circuit structure of the low-dropout regulator maintains the high LDO efficiency, low noise and the simple circuit structure, and the power supply rejection ratio under the high-frequency condition is increased.

The invention discloses a touch display panel and a driving method thereof. The touch display panel comprises a first substrate, wherein a plurality of electrode units, a plurality of switching devices, a touch display circuit and a public lead are arranged on the first substrate; the public lead is used for loading a public signal; each electrode unit is electrically connected with the touch display circuit through a first lead respectively; each electrode unit is electrically connected with the public lead through second leads; each switching device is arranged between each second lead and the public lead in order to switch off the electrical connection between the public lead and the second leads at a touch sensing stage, and connect the public lead and the second leads at a display stage. Thus, each electrode unit loads the public signal through the first leads and the second leads which are connected in parallel at the display stage, so that the equivalent resistance between the electrode units and the touch display circuit at the display stage is reduced, and the delay of the public signal on a touch electrode unit is reduced.

An electro static discharge (ESD) protection circuit employing a field-effect transistor (FET) having no silicide block disposed thereon. It is connected with an internal circuit so as to prevent the internal circuit from the influence of an ESD event, wherein the internal circuit has at least a signal input end. The ESD protection circuit includes: an ESD clamp circuit for providing an ESD grounding path as an ESD occurs; and at least a pair of p-n junction diodes. The p-n junction diodes are stacked so that one of the p-n junction diodes has a n-type end coupled to the signal input end and the other one has a p-type end coupled to the signal input end as well. The ESD clamp circuit has at least a FET, whose drain has no silicide block disposed thereon.

The invention relates to the field of high-power microwave technologies, in particular to a high-power microwave dense-slot waveguide antenna. Specific to the technical problem that an existing high-power microwave antenna with a low compactness degree cannot be applied to certain environments, the invention provides a high-power microwave waveguide slot antenna which is compact in structure and has relatively high power capacity and an arraying prospect. According to the characteristics of a large number of slots within a unit length of the waveguide slot antenna and relatively low coupling power allocated to the slots, relatively high power capacity is realized. Meanwhile, a relatively low antenna is designed according to the characteristics that the slots are formed in wide edges and waveguide narrow edges can be relatively small, so that actual applications are satisfied. Through adoption of the high-power microwave dense-slot waveguide antenna, the defects of low power capacity and relatively large size in a conventional waveguide slot antenna can be overcome, and an effective technical scheme is provided for projects.

A transversally coupled double-mode SAW filter using a surface acoustic wave has two SAW resonators which have curtain-like electrodes and a pair of reflectors on both side thereof, respectively, and which are disposed in parallel on a piezoelectric flat plate in the propagation direction of the surface acoustic wave. The curtain-like electrodes of the SAW resonators have a first bus bar of electrically positive electrode which extends in the propagation direction of SAW and second and third bus bars of electrically negative electrode which extend in parallel on both sides of the first bus bar. The first bus bar has multiple electrode fingers of electrically positive electrode which face the second and third bus bars on both sides thereof and which extend in a direction perpendicular to the propagation direction of SAW so as to suitably have a space of lambd / 2, lambd being the wavelength of the surface acoustic wave, and a width of lambd / 4. The second and third bus bars have multiple electrode fingers of electrically negative electrode which correspond to the electrode fingers of electrically positive electrode, face the first bus bar and extend in a direction perpendicular to the propagation direction of SAW so as to similarly have a space of lambd / 2 and a width of lambd / 4. Thereby, the curtain-like electrodes are constituted to invert the direction of driving field by 180° with the first bus bar therebetween, and to enable making the passband width sharply broader than before by use of the frequency difference between excited primary symmetric mode and primary anti-symmetric mode.

The invention provides a production technology for a transient voltage suppressor chip with the channeling effect. By means of the steps of gaseous state source diffusion, channel corrosion and double-faced electrophoresis, in the reverse state, the width of depletion layers and the reverse voltage of the high-voltage transient voltage suppressor chip which is of the N+PN+ structure are increased along with the increase of a reverse current, when the reverse current is increased to be close to Ic, the depletion layers on the two faces make contact with each other, the channeling effect is produced, the equivalent resistance is reduced, the clamp voltage is reduced, the reverse surge capacity is improved, the reliability of a diode is improved, the service life of the diode is prolonged, and the transient voltage suppressor chip has the advantages of being good in electrical parameter uniformity, better in ohmic contact and high in reliability, the problem that the thicknesses of two glass layers are uneven due to two times of single-face electrophoresis is avoided, the glass is high in stress-resisting capability of protection and not prone to damage, and the reliability of the transient voltage suppressor chip is further improved.

A display apparatus includes a first sub-pixel and a second sub-pixel. The first sub-pixel and the second sub-pixel are electrically and respectively connected to a first gate line and a second gate line adjacent to each other and are electrically connected to a data line. The display apparatus further includes a connection line disposed between sub-pixel electrodes of the first and second sub-pixels. The connection line has two ends connected to the data line and serves as an additional or alternative path for transmitting a data signal that is transmitted by the data line.

The invention discloses a display panel and a display device. The display panel comprises a substrate, a cathode signal line, an insulating layer, an organic functional layer and a cathode layer, wherein the cathode signal line, the insulating layer, the organic functional layer and the cathode layer are sequentially stacked on the substrate; the cathode signal line is arranged around the displayarea, the organic functional layer is at least located in the display area, and the cathode layer is arranged on the whole surface; the cathode signal line and the organic functional layer have non-overlapping areas, the insulating layer has a hollow structure in the non-overlapping areas, and the cathode signal line is electrically connected with the cathode layer through the hollow structure. Acathode signal line which is arranged on a different layer from a cathode layer, is electrically connected with the cathode layer and surrounds a display area is arranged; the contact area of the cathode signal line and the cathode layer is increased; the equivalent resistance at the joint of the cathode signal line and the cathode layer is reduced, so that the drop amplitude of the cathode voltage at the position far away from the signal source is reduced, the cathode signal is input into the cathode layer through the cathode signal line, the resistance voltage drop on the cathode layer is reduced, and the display uniformity of the display panel is improved.

A bias control circuit for controlling a bias circuit coupled to an amplifier transistor. The bias control circuit receives a control voltage, and actively adjusts an equivalent resistance of the bias control circuit responsive to the control voltage, wherein the equivalent resistance is established between a first node and a reference voltage. In one embodiment, when the control voltage is increased, the equivalent resistance is gradually decreased and a current drawn by the bias control circuit is gradually increased, resulting in a quiescent current of the amplifier transistor being gradually increased.

The invention discloses a display panel and a display device. An auxiliary signal line crossed with an initialization signal line is arranged; a first via hole is formed in the intersection of the initialization signal line and the auxiliary signal line; the corresponding initialization signal lines and the auxiliary signal lines are electrically connected through the first via holes, so that theinitialization signal lines and the auxiliary signal lines which are electrically connected are connected in parallel, equivalently, the initialization signal lines are connected with a resistor in parallel; and therefore the equivalent resistance of the initialization signal lines can be reduced. Due to the fact that the larger the length of the initialization signal lines is, the larger the number of the first via holes corresponding to the initialization signal lines is, the larger the length of the initialization signal lines is, the more the resistors connected with the initialization signal lines in parallel are, delay of signal transmission can be reduced. The display panel can be easily applied to a large-size display device, and the display uniformity is improved.

The invention discloses a wiring method for realizing the direct-current deicing of a ground wire of a converter station, relates to a direct-current deicing technique of a power grid transmission line, and aims at providing a method for effectively reducing the equivalent resistance of the ground wire to be deiced. The technical points of the wiring method are as follows: the wiring method comprises a step of carrying out all-insulation transformation on the ground wire to be deiced, and retaining one grounding point at most after the all-insulation transformation; a step of dividing the ground wire into n sections, wherein each section of the ground wire comprises one ground wire or at least ground wires which are parallel to each other and two ends of which are aligned; a step of connecting one ends of all ground wires belonging to one same ground wire section by means of short circuits so as to be used as one end of the ground wire section, and connecting the other ends of all ground wires belonging to one same ground wire section by means of circuit boards so as to be used as the other end of the ground wire section; a step of connecting one ends of all the ground wire sections with a lead I and connecting the other ends of all the ground wire sections with a lead II; a step of connecting an output access point of a direct-current deicing device with the lead I; a step of connecting the output access point of the direct-current deicing device with the lead II, etc.

The invention discloses a manufacturing method of a multi-wall carbon nanotube and polyaniline nano fiber composite supercapacitor electrode. The manufacturing method is characterized by including the following steps that firstly, polystyrolsulfon acid is used for scattering a multi-wall carbon nanotube; secondly, a polyaniline nano fiber is manufactured; finally, the multi-wall carbon nanotube and polyaniline nano fiber composite supercapacitor electrode is manufactured. The electrode of a supercapacitor is manufactured by a compound of the carbon nanotube and the polyaniline nano fiber, and the manufacturing method is simple and suitable for industrial production. In addition, the supercapacitor electrode manufactured with the manufacturing method is high in electrical conductivity, low in equivalent resistance and high in charge-discharge cycle stability.

The invention discloses a high voltage stabilizer which comprises a current limiting resistor, a clamping circuit and a high voltage intrinsic NMOS tube, wherein the current limiting resistor and the clamping circuit are connected in series between an external power source and the ground, and the source electrode of the high voltage intrinsic NMOS tube is connected with an internal circuit, the drain electrode is connected with an external electric end, and a gate electrode is connected with the current limiting resistor and the clamping circuit. The invention also discloses a high voltage intrinsic NMOS tube. A part of a gate oxide layer close to a source electrode N+ is a thin gate oxide layer; a part of the gate oxide layer close to a drain electrode N+ is a thick gate oxide layer; high voltage N wells are generated below the drain electrode N+ and the thick gate oxide layer; the high voltage N wells completely envelope the thick gate oxide layer and the drain electrode N+; the doping concentration of the high voltage N-well region is smaller than that of a P substrate region; and a polysilicon part of the gate electrode covers the thick gate oxide layer. The high voltage stabilizer of the invention has simple structure, large driving capacity and low power consumption.

The invention provides a micro-arc oxidation device for improving film thickness evenness and energy utilizing rate based on a separate type compensation cathode, relates to the field of workpiece surface micro-arc oxidation, and solves the problem of the existing micro-arc oxidation technology that uneven workpiece oxide film thickness and electrolyte equivalent impedance result in low energy utilizing rate. An upper cathode frame is of a U-shaped structure and is erected on a micro-arc tank, array through holes are formed in the bottom plate of the upper cathode frame, an insulating frame is fixed to the upper surface of the upper cathode frame through bolts, an anode rod is a cuboid long rod, the two ends of the anode rod are fixed on the insulating frame through bolts, one end of a workpiece suspending rod is positioned in the micro-arc tank and provided with a hook, the other end of the workpiece suspending rod penetrates through the through hole in the bottom plate of the upper cathode frame and is fixed on the anode rod through an anode clamp, a hook is arranged at one end of a compensation cathode suspending rod, the compensation cathode suspending rod is erected on the bottom plate of the upper cathode frame through the hook, and a compensation cathode plate is fixedly connected with the other end of the compensation cathode suspending rod. The micro-arc oxidation device is suitable for micro-arc oxidation.

The present invention provides a Miller clamping device for switching transistors connected in parallel and a driver including the same. The Miller clamping device comprises a driver chip including anoutput terminal for outputting a pulse width modulation signal and a built-in Miller clamping circuit having a Miller clamping terminal; each auxiliary Miller clamping circuit is connected between the gate pole of the corresponding switching transistor and the Miller clamping terminal of the built-in Miller clamping circuit; when the built-in Miller clamping circuit is triggered to be used for Miller clamping, the Miller current generated by the corresponding switching transistor flows to a first direct-current voltage through the corresponding auxiliary Miller clamping circuit. According tothe Miller clamping device, Miller clamping can be carried out on the switching transistors connected in parallel, and the circuit cost is reduced.

The invention discloses a clock generation circuit and an analogue-to-digital converter (ADC) sampling circuit. The clock generation circuit comprises a first input unit, a second input unit, a superposition unit and a clock signal output unit, wherein the first input unit is used for providing a voltage pulse signal on the basis of a first pulse control signal; the second input unit is used for providing an analogue pulse signal on the basis of a second pulse control signal; the superposition unit is connected with the first and second input units, and is used for receiving the voltage pulse signal and the analogue pulse signal, and superposing the voltage pulse signal and the analogue pulse signal to generate a clock pulse signal; and the clock signal output unit is connected with the superposition unit, and is used for outputting a clock signal on the basis of a third pulse control signal. By the clock generation circuit, the output clock signal is associated with an analogue signal input by a sampling circuit, so that a difference between the gate voltage and source input voltage of a transistor switch in the sampling circuit is a constant value, and harmonic distortion is reduced.

The invention discloses an array substrate, an organic light-emitting display panel, and a display device. Metal bridge wires are set so as to enable the source electrodes of a data transistor and a drive transistor to be electrically connected with each other through one metal bridge wire, and enable the drain electrode of the drive transistor to be electrically connected with a compensation transistor through the other metal bridge wire. Moreover, the material of the metal bridge wires is metal, and the square resistance of the metal material is less than the square resistance of a heavily-doped semiconductor material, thereby reducing the equivalent resistance of the path that a data signal is inputted into a grid electrode of the drive transistor, reducing the delay of the data signal,and preventing the incomplete writing of the data signal. In particular, when the array substrate is used in a high-resolution display panel, the incomplete writing of the data signal is prevented, and the display uniformity is further improved.

A display apparatus includes a first sub-pixel and a second sub-pixel. The first sub-pixel and the second sub-pixel are electrically and respectively connected to a first gate line and a second gate line adjacent to each other and are electrically connected to a data line. The display apparatus further includes a connection line disposed between sub-pixel electrodes of the first and second sub-pixels. The connection line has two ends connected to the data line and serves as an additional or alternative path for transmitting a data signal that is transmitted by the data line.

“An image sensor suitable for operating in subresolution mode, including a plurality of pixels each formed of an elementary cell including a photodiode, and a reset transistor for connecting the photodiode to a reference voltage source, and a readout transistor connected to a column bus bar for acquiring the value of the charge of the photodiode, where the elementary cells are grouped in subsets forming macro-pixels, each subset having a common electrical connection, to which each elementary cell is able to connect by its reset transistor, in order to share the charges between the photodiodes of the elementary cells of said subset, said common electrical connection being suitable for connection to the reference voltage source.”

The present invention relates to a guide wheel power-feeding device of electric spark linear cutting machine equipment. It is composed of supporting frame, power-feeding guide wheel and power-feeding terminal, said power-feeding terminal is formed from terminal main body, spring and static power-feeding body. The spring is limited in the terminal main body cavity, one end of said spring is connected with static power-feeding body, said static power-feeding body is contacted with power-feeding guide wheel axle, the above-mentioned power-feeding guide wheel and power-feeding terminal main body are mounted on the supporting frame. The described guide wheel is made up by butt-jointing thin sheets. Said invention can obviously raise its machining accuracy.

A driving circuit applied to a LCD apparatus includes N driver chips, a signal source, a WOA wire, a COF wire. Each driver chip is COF-packaged and correspondingly coupled to L output channels. N and L are positive integers and N≧2. The signal source is coupled to L output channels of the first driver chip. One terminal of WOA wire is coupled to L output channels of the second driver chip. One terminal of the COF wire is coupled between the signal source and a first output channel of the first driver chip and another terminal of the COF wire is coupled to another terminal of WOA wire. The resistance of COF wire is far smaller than a first internal resistance between the first output channel and L-th output channel of first driver chip and the resistance of WOA wire is substantially equal to first internal resistance.

The invention relates to a high-effect large-current electromagnetic transmitting system, and the system comprises a medium-frequency high-voltage power supply, a large-current electromagnetic transmitting module, a main control unit, and an output waveform generator. The large-current electromagnetic transmitting module consists of a medium-frequency high-voltage transformer, a power conversion unit, and a current filter, wherein the medium-frequency high-voltage transformer, the power conversion unit and the current filter are connected together. The medium-frequency high-voltage transformer employs a large-transformer-ratio double-secondary-coil transformer, and the power conversion unit is located at a secondary coil end of the transformer, comprises two branch circuits and can achieve dipolar output, thereby guaranteeing that the symmetrical operation of the transformer in the positive and negative half cycles. Compared with a conventional transmitter, the system greatly improves the efficiency, and changes the topological structure of a conventional electromagnetic transmitting system. The power conversion unit employs a modularized design, and improves the controllability and expandability of the system.