90957 results about "Laser" patented technology

A self-anchoring tissue lifting device for use with facial cosmetic reconstructive surgery includes an implant and a removable foil cover disposed on the implant. The implant includes an elongated mesh strip having a distal end on which is situated a tissue anchoring fleece material. Opposite lateral edges of the mesh material are preferably laser cut during the manufacturing process of the implant to provide a plurality of tissue engaging prickles along the longitudinal length of the implant. For treating the mid face and jowl, a stab incision is made within the hairline of the temple region of the patient and the device is applied from the temporal area to the peak of the ipsilateral cheek to capture the malar fat pad to correct midface abnormalities or the ptotic tissue causing the jowl.

Misreads in decodable indicia by terminals such as bar code scanners (e.g., laser, image sensors) can occur. Solutions can include increasing redundancy or screening out erroneous data. Embodiments of screening error reduction circuits, terminals, and / or methods for processing decodable indicia data are provided.

A lidar-based 3-D point cloud measuring system and method. An example system includes a base, a housing, a plurality of photon transmitters and photon detectors contained within the housing, a rotary motor that rotates the housing about the base, and a communication component that allows transmission of signals generated by the photon detectors to external components. The rotary component includes a rotary power coupling configured to provide power from an external source to the rotary motor, the photon transmitters, and the photon detectors. In another embodiment, the photon transmitters and detectors of each pair are held in a fixed relationship with each other. In yet another embodiment, a single detector is “shared” among several lasers by focusing several detection regions onto a single detector, or by using a single, large detector.

A method of forming a conductor in a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls, depositing a metal barrier layer comprising the barrier metal on the first barrier layer, depositing a main conductor species seed layer on the metal barrier layer and depositing a main conductor layer. The method further includes annealing the main conductor layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light. The method of Claim 1 further comprising, prior to the annealing step, depositing an amorphous carbon optical absorber layer on the main conductor layer. The step of depositing an amorphous carbon optical absorber layer includes introducing a carbon-containing process gas into a reactor chamber containing the substrate in a process zone of the reactor, applying RF source power to an external reentrant conduit of the reactor to generate a reentrant toroidal RF plasma current passing through the process zone and applying a bias voltage to the substrate.