254 results about "Low temperature deposition" patented technology

This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

Transistor fabrication includes forming a nitride-based channel layer on a substrate, forming a barrier layer on the nitride-based channel layer, forming a contact recess in the barrier layer to expose a contact region of the nitride-based channel layer, forming a contact layer on the exposed contact region of the nitride-based channel layer, for example, using a low temperature deposition process, forming an ohmic contact on the contact layer and forming a gate contact disposed on the barrier layer adjacent the ohmic contact. A high electron mobility transistor (HEMT) and methods of fabricating a HEMT are also provided. The HEMT includes a nitride-based channel layer on a substrate, a barrier layer on the nitride-based channel layer, a contact recess in the barrier layer that extends into the channel layer, an n-type nitride-based semiconductor material contact region on the nitride-based channel layer in the contact recess, an ohmic contact on the nitride-based contact region and a gate contact disposed on the barrier layer adjacent the ohmic contact. The n-type nitride-based semiconductor material contact region and the nitride-based channel layer include a surface area enlargement structure.

A method and apparatus for depositing a material layer onto a substrate is described. The method includes delivering a mixture of precursors for the material layer into a process chamber and depositing the material layer on the substrate at low temperature. The material layer can be used as an encapsulating layer for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. In one aspect, the encapsulating layer includes one or more material layers (multilayer) having one or more barrier layer materials and one or more low-dielectric constant materials. The encapsulating layer thus deposited provides reduced surface roughness, improved water-barrier performance, reduce thermal stress, good step coverage, and can be applied to many substrate types and many substrate sizes. Accordingly, the encapsulating layer thus deposited provides good device lifetime for various display devices, such as OLED devices. In another aspect, a method of depositing an amorphous carbon material on a substrate at low temperature is provided. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.

A system and method for forming a phase change memory material on a substrate, in which the substrate is contacted with precursors for a phase change memory chalcogenide alloy under conditions producing deposition of the chalcogenide alloy on the substrate, at temperature below 350° C. with the contacting being carried out via chemical vapor deposition or atomic layer deposition. Various tellurium, germanium and germanium-tellurium precursors are described, which are useful for forming GST phase change memory films on substrates.

Systems and methods are provided that facilitate the formation of micro-mechanical structures and related systems on a laminated substrate. More particularly, a micro-mechanical device and a three-dimensional multiple frequency antenna are provided for in which the micro-mechanical device and antenna, as well as additional components, can be fabricated together concurrently on the same laminated substrate. The fabrication process includes a low temperature deposition process allowing for deposition of an insulator material at a temperature below the maximum operating temperature of the laminated substrate, as well as a planarization process allowing for the molding and planarizing of a polymer layer to be used as a form for a micro-mechanical device.

A solid state device includes a first material and a second material. A barrier layer is formed between the first material and the second material to prevent diffusion between the first material and the second material. The barrier layer includes a metal form of at least one of Ru and Re. The barrier layer is preferably formed using a low temperature deposition process, where the substrate is less than 400 degrees C.

Microelectromechanical systems (MEMS) are small integrated devices or systems that combine electrical and mechanical components. It would be beneficial for such MEMS devices to be integrated with silicon CMOS electronics and packaged in controlled environments and support industry standard mounting interconnections such as solder bump through the provisioning of through-wafer via-based electrical interconnections. However, the fragile nature of the MEMS devices, the requirement for vacuum, hermetic sealing, and stresses placed on metallization membranes are not present in packaging conventional CMOS electronics. Accordingly there is provided a means of reinforcing the through-wafer vias for such integrated MEMS-CMOS circuits by in filling a predetermined portion of the through-wafer electrical vias with low temperature deposited ceramic materials which are deposited at temperatures below 350° C., and potentially to below 250° C., thereby allowing the re-inforcing ceramic to be deposited after fabrication of the CMOS electronics.

A method for depositing a carbon-containing material layer onto a substrate includes delivering a mixture of precursors for the carbon-containing material layer into a process chamber, doping the carbon-containing material layer with silicon, and depositing the carbon-containing material layer at low temperature. In one aspect, improved light transmittance of the carbon-containing material layer at all wavelengths of a visible light spectrum is obtained. In addition, a method for depositing an encapsulating layer is provided for various display applications which require low temperature deposition process due to thermal instability of underlying materials used. The encapsulating layer may include one or more barrier layer material layers and one or more amorphous carbon material layers. The amorphous carbon material can be used to reduce thermal stress and prevent the deposited thin film from peeling off the substrate.

This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.

Disclosed are an organic light emitting display having touch sensors, which may achieve process simplification and cost reduction, and a method of fabricating the same. The organic light emitting display includes a plurality of touch electrodes disposed on an encapsulation unit disposed so as to cover light emitting elements, the touch electrodes are formed through a low-temperature deposition process and may thus have amorphous characteristics so as to prevent damage to an organic light emitting layer during formation of the touch electrodes, and the touch electrodes are disposed on the encapsulation unit without a separate attachment process and may thus simplify the overall process and reduce manufacturing costs.

The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.

The invention discloses a monolithic integrated SiC MEMS (Micro-Electro-Mechanical Systems) pressure sensor and a production method thereof. The pressure sensor comprises a first substrate in which a CMOS (Complementary Metal Oxide Semiconductor) processing circuit is inlayed, a second substrate provided with a pressure cavity and a capacitor induction thin film arranged between the two substrates. The thin film is formed sandwiching an electrode between two layers of PECVD SiC thin films and is suspended on the pressure cavity; a lower electrode covers the surface of the pressure cavity; part of the first substrate above the pressure cavity is provided with a deep groove for exposing the PECVD SiC thin film on the upper layer; the CMOS processing circuit is located beside the deep groove and is communicated with the upper electrode. The sensor uses SiC of low-temperature deposition as the induction thin film, has good performance and is suitable for corrosive environment. Besides, the invention realizes integration between the sensor and the processing circuit by using a post-CMOS method so as to improve the integral precision and stability of the device.

The invention relates to a rotating disc type multi-nozzle three-dimensional controlled forming system for a complex organ precursor, belonging to the technical field of tissue engineering. The system mainly comprises a box body, a bracket, a rotating disc type multi-nozzle jetting device, a forming chamber, a forming table, a three-dimensional moving mechanism, a refrigerating device, a control system and a data processing system, wherein the rotating disc type multi-nozzle jetting device comprises a rotating disc and nozzle assemblies, and the nozzle assemblies are uniformly and circumferentially distributed on the rotating disc. When a precursor of a complex organ, such as liver, heart, kidney and the like, is formed, by utilizing a low-temperature deposition manufacturing process theory, the forming chamber is firstly cooled, the motions of the three-dimensional moving mechanism and the rotation and the material jetting of the rotating disc type multi-nozzle jetting device are controlled by the control system, and the forming table does three-dimensional motions; different nozzle assemblies can be changed by the rotation of the rotating disc so as to extrude to form and accumulate matrix materials with different tissue scaffolds and cells on the forming table. The device adopts a rotating disc type multi-nozzle interactive forming mode and can realize the precise forming of various non-homogeneous materials with complex three-dimensional structures.

This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups.

The invention provides a fixed multi-nozzle complex organ precursor three-dimensional controlled forming system, and belongs to the technical field of tissue engineering. The system mainly comprises a case body, a bracket, a fixed multi-nozzle injection device, a forming chamber, a forming table, a three-dimensional motion mechanism, a refrigeration device and a control and data processing system, wherein the fixed multi-nozzle injection device comprises a fixed nozzle scaffold and nozzle components; and the nozzle components are uniformly distributed on the fixed nozzle scaffold in a parallel or array way. When the precursor of a complex organ, such as liver, heart, kidney and the like, is formed, the forming chamber is cooled by utilizing a low-temperature deposition process principle, and a control system controls motion of the forming table and three-dimensional motion mechanism, as well as injection of the fixed multi-nozzle injection device, so that different tissue scaffold materials and cell/matrix composite materials can be deposited and formed on the forming table. According to the device, accurate formation of a plurality of heterogeneous materials with complex three-dimensional structures can be realized by adopting a fixed multi-nozzle interactive forming mode.

An oxidation process for reducing the data retention loss (DRL) in a FAMOS device comprising the steps of (1) low temperature deposition of a silicon-enriched silicon oxide (130) over a FAMOS transistor gate stack (116) and (2) annealing said silicon-enriched oxide (130) at a high temperature in oxygen atmosphere to convert said silicon-enriched oxide (130) to a thermal oxide. The silicon enriched oxide (130) acts as both an oxygen getter and diffusion barrier during the annealing step.

Chalcogenide based photovoltaic devices cells with good resistance to environmental elements can be formed by direct low temperature deposition of inorganic barrier layers onto the film. A unique multilayer barrier can be formed in a single step when reactive sputtering of the silicon nitride onto an inorganic oxide top layer of the PV device.