212results about How to "Low deposition temperature" patented technology

This invention discloses the method of forming silicon nitride, silicon oxynitride, silicon oxide, carbon-doped silicon nitride, carbon-doped silicon oxide and carbon-doped oxynitride films at low deposition temperatures. The silicon containing precursors used for the deposition are monochlorosilane (MCS) and monochloroalkylsilanes. The method is preferably carried out by using plasma enhanced atomic layer deposition, plasma enhanced chemical vapor deposition, and plasma enhanced cyclic chemical vapor deposition.

A coated active biologic piezoelectric layer on Ti substrate is prepared from fluorohydroxy apatite (FHA) and barium titanate (BT) through cleaning the surface of Ti substrate, microarc oxidizing to form a porous oxide film layer, and electrophoretic deposition to form a FHABT layer on the surface of Ti substrate. Its advantages are easy control to content of F, high implantation stability, binding power to interface, biocompatibility and bioactivity, and high effect to promote generation of biologic bone and taking part energy conversion in human body.

The invention relates to the technical field of production methods of solar cells, in particular to a method for preparing a selective emitter by one-time diffusion, which sequentially comprises the following process steps: making texture on a silicon wafer, carrying out uniform heavy diffusion, depositing silicon nitride film on the surface of the silicon wafer after diffusing, and printing corrosive slurry in a non-metallic electrode region of the silicon wafer so as to etch the silicon nitride film; and finally, etching the silicon in the non-metallic electrode region with an acid solution or alkali solution to obtain a shallow diffusion region, and the electrode region being a heavy diffusion region. The heavy diffusion process can achieve double-sided gettering, the deposition temperature of the silicon nitride film is low, the whole process is simple and easy to control, the surface is not damaged and has no dead layer, and the cost is low.

The invention relates to a packaging structure of an OLED. The structure comprises a substrate of the OLED. One side of the substrate is provided with an anode of the OLED, an organic layer and a cathode. The outboard of the cathode is at least provided with a packaging layer. The packaging layer is a multilayer composite membrane structure which is formed by alternative deposition of two inorganic insulating materials through an atomic layer deposition system. The packaging structure of the OLED in the invention has a low deposition temperature. The organic layer of a luminescent device can not be damaged. Other organic film formation equipment is not needed. Equipment investment costs and land occupation areas can be saved. The inorganic film layer structure alternatively prepared by using an atomic layer deposition method is compact. Pinholes are less. Water and oxygen can be effectively avoided to penetrate into a device. A protection layer is processed on the packaging layer so as to effectively protect the packaging layer and obstruct the water and the oxygen.

The invention relates to a corrosion-resistant colored decorative film and a preparation method thereof. The method prepares the corrosion-resistant colored decorative film on the surface of a metal material by adopting radio-frequency magnetron sputtering technology, and the prepared decorative film has good bonding force with a substrate. The metal material is zinc, copper, aluminum or alloy of the metals. The decorative film prepared by the method has a double-layer film structure, wherein the first layer is a titanium film, and the second layer is a (carbonized or azotized) titanium film. The method can prepare the acid, alkali and corrosion resistant decorative film with different colors comprising golden yellow, purple, dark blue, silvery white, black and the like. The method has the advantages of no environmental pollution, simple operation, low cost and capability of large-scale production; the prepared film has high quality; and the method is suitable for preparing the decorative film by using the metal material or the similar metal material as a base material.

Based on the crystal heteroepitaxial growth principle, the invention provides a low-temperature preparation method of depositing a vanadium dioxide film on a glass substrate without changing the quality (thermochromatism) of the vanadium dioxide film. Using glass as substrate, the method comprises the following steps: 1) cleaning and pre-treating the glass substrate; 2) depositing a vanadium dioxide diffusion barrier layer on the glass substrate; 3) depositing a zinc oxide seed crystal layer on the vanadium dioxide diffusion barrier layer; and 4) depositing a vanadium dioxide thermochromic layer on the zinc oxide seed crystal layer. The vanadium dioxide thermochromic layer has low crystallization temperature and lattice constant matched with vanadium dioxide, and is particularly suitable for the heteroepitaxial growth of the vanadium dioxide film. Therefore, the invention can efficiently reduce the deposition temperature of vanadium dioxide film, simplify the process of producing intelligent vanadium dioxide glass, minimize cost and energy consumption, and greatly reduce the difficulty in industrialization of intelligent vanadium dioxide glass.

The invention discloses a preparation method of a coating with a thiol compound as a transition layer, and belongs to the technical field of plasmas. According to the method, a sulfydryl-containing thin layer is adopted as the transition layer between the coating and a substrate; before the coating is deposited, the thin layer of 1-10 nm is deposited on the surface of the substrate by using a sulfydryl-containing monomer, wherein the sulfydryl at one end of the monomer reacts with the surfaces of copper, gold, nickel, epoxy resin and the like, so that a chemical bond is formed, the excellent binding property is kept, and the other end of the monomer is polymerized, and has the excellent binding property with the coating on the upper layer. According to the method for depositing the transition layer, the binding force of the coating and the substrate is greatly improved; according to the method , the environmental protection property is high, the deposition temperature is low, the speedis higher, and the controllability of the coating structure and the composition is high, and the selectivity of the monomer is high; the deposition efficiency is high, and the compactness of the obtained organic silicon nano-protection coating is remarkably improved; and the binding force obtained by the coating on different substrates can be improved by 30-50%.

The invention discloses a double-layer anti-reflecting film of a crystal silicon solar cell and a preparation method thereof. The double-layer anti-reflecting film is characterized in that the film consists of a loose layer TiO2 film, a compact layer TiO2 film and a SiO2 passivation layer in turn, wherein the SiO2 passivation layer is positioned between the compact layer TiO2 film and a silicon-based substrate. The preparation method comprises the following steps: depositing the compact layer TiO2 film and the loose layer TiO2 film on the right surface of the silicon-based substrate; and after electrode silver paste is printed, through conventional sintering at the temperature between 400 and 900 DEG C, forming the SiO2 passivation layer at an interface of the silicon-based substrate and the compact TiO2. A TiO2/TiO2, quasi double-layer anti-reflecting film of the invention is finished once by changing the depositing condition, is optimized on the process and equipment, and has better anti-reflecting effect compared with a single-layer anti-reflecting film.

The invention discloses a tube type PERC single-sided solar cell, which comprises a main silver back gate, an all-aluminum back electric field, a back-side composite film, a P-type silicon, an N-type emitting electrode, a front-side passivation film and a positive silver electrode. The back-side composite film is composed of one or more selected from an aluminum oxide film, a silicon dioxide film, a silicon oxynitride film and a silicon nitride film and is deposited at the back of a silicon chip by adopting tube type PECVD equipment. The tube type PECVD equipment comprises four gas pipelines of silane, ammonia, trimethyl aluminum and laughing gas. The appliance of the tube type PECVD equipment, used for loading and unloading silicon chips, is a graphite boat. The depth of a sticking point groove of the graphite boat is 0. 5-1 mm. The invention also discloses a preparation method and special equipment of the tube type PERC single-sided solar cell. According to the invention, the photoelectric conversion efficiency is high. Meanwhile, the appearance yield and the EL yield are high. The problems of scratching, winding and plating can be solved.

The invention provides a preparation method for a high-insulation hard nanometer protection coating of a composite structure, belonging to the field of plasma technology. According to the method, a reaction cavity is vacuumized and inert gas is introduced to allow a substrate to move, so organosilicon monomers with low dipole moment and high chemical inertia are screened out; the free volume and compactness of a coating are regulated and controlled through multifunctionality monomers, so the coating is allowed to have insulating properties and excellent protection performance and wear resistance at the same time; and an organosilicon coating is deposited on the coating with high insulating properties, and surface hard treatment is carried out so as to form a hard coating with a compact structure. The high-insulation hard nanometer protection coating provided by the invention has more excellent protection performance, insulating properties and wear resistance compared with conventionalcoatings such as parylene under the condition of same thickness. The preparation method provided by the invention overcomes the problems of poor wear resistance, too great thickness, low production efficiency and the like of conventional parylene coatings; and through hard treatment, a composite wear-resistant silica structure is increased in the coating, and the hardness and wear resistance of the coating are effectively improved.

The invention belongs to the technical field of fabrication of a metal coating layer, and discloses a three-layer film structure coating layer and a fabrication method thereof. The three-layer film structure coating layer comprises a dual-phase Cr+Alpha-(Al, Cr)2O3 matrix pasting layer, a single phase Alpha-(Al, Cr)2O3 support layer and a single-phase nanometer Alpha-Al2O3 surface layer. The fabrication method comprises the steps of sequentially depositing the Cr+Alpha-(Al, Cr)2O3 matrix pasting layer and the Alpha-(Al, Cr)2O3 support layer by DC magnetron sputtering and by a CrAl alloy target; and obtaining the single-phase nanometer Alpha-Al2O3 surface layer by radio-frequency magnetron sputtering by an Al+Alpha-Al2O3 compost target. The surface working layer of the obtained coating layer is of a single-phase nanometer Alpha-Al2O3 structure, the coating layer is high in hardness, good in toughness, high in high-temperature thermal stability, low in friction coefficient during friction with a metal matrix and is firmly combined with a matrix such as high-speed steel, a hot work die steel and high-temperature alloy.

The invention discloses a preparing method of gallium nitride luminous film doped by rare earth, which is characterized by the following: controlling the substrate temperature within 0-500 Deg C; adopting nitrogen or composite gas of nitrogen and argon as splashing gas; proceeding magnetic control splashing for metal gallium of doped rare earth powder in the vacuum; sedimenting rare earth doped gallium nitride luminous film on the substrate of target position. The invention also provides magnetic control splashing device to prepare the product, which contains vacuum chamber; the rotary substrate rack with substrate and 3-5 magnetic targets are set in the vacuum chamber; the magnetic control target is set on the substrate, which makes substrate bottom parallel the magnetic control target; each magnetic control target connects DC anode directly; the cooling chamber is set in the magnetic control target, which possesses cooling dielectric inlet an outlet.

The invention relates to a low-temperature growth method of silicon quantum dots for a solar battery, which belongs to the technical field of silicon quantum dot material. The method comprises the following steps: alternately growing a silicon compound dielectric layer of the stoichiometric proportion and a silicon compound layer containing Si which is several nanometers thick in stoichiometric ratio on a silicon wafer or a quartz sheet or a glass sheet or a stainless steel sheet or high-temperature resistant polymer substrate material at the temperature lower than 450 DEG C by using the plasma chemical vapour deposition (PCVD) technology; carrying out post annealing treatment at the temperature lower than or equal to 550 DEG C by using the rapid photo-thermal annealing technology, so that the residual Si in the silicon compound layer containing Si generates diffusion transfer and solid phase crystallization to form the Si quantum dots, wherein the formed Si quantum dots are arranged in a layered mode, the size of each Si quantum dot is controlled by the thickness of the originally-grown silicon compound layer containing Si, and the density of each Si quantum dot is determined by the content of Si in the original SiN<x> layer containing Si. The invention has the advantages of low depositing temperature, quick speed and good technology controllability and repeatability, thus the uniformity of the grown silicon quantum dot material is good; and the invention is favorable for integrated manufacture and cost reduction of devices.

The invention discloses a low-temperature low-pressure preparation method of a boron nitride coating. The method of the invention is used for solving the problem that required preparation temperature is high by a chemical vapor deposition method in the prior art. Boron trichloride (BCl3) and ammonia gas (NH3), which are used as main raw materials, undergo chemical vapor deposition under the condition of low temperature; a sample obtained undergoes high-temperature heat treatment; and through Fourier transformed infrared and X-ray diffraction detection, a boron nitride coating which has stronger infiltration capacity, uniformly and controllable thickness and high degree of crystallization is prepared. The method can be used for preparation of a composite material boron nitride interface and for preparation of a sample surface coating. By the method, deposition temperature of boron nitride chemical vapor deposition is reduced from 1300-1800 DEG C to 300-800 DEG C. The method mainly comprises low-temperature chemical vapor deposition and high-temperature heat treatment.

The invention discloses a preparation method for an organic silicon nanometer hard protective coating, and belongs to the technical field of plasmas. In the method, a reaction chamber is vacuumized, an inert gas is charged to enable a base material to move, monomer steam is charged, chemical vapor deposition is carried out, and an organic silicon nanometer coating is prepared on the surface of the base material through the chemical vapor deposition; and the component of the monomer steam is the mixture of at least one organic silicon monomer containing double bonds and a Si-Cl structure or a Si-O-C structure or a Si-N-Si structure or a Si-O-Si structure or a cyclic structure, and at least one polyfunctional unsaturated hydrocarbon and hydrocarbon derivative, charging for the monomer steam is stopped, oxygen and/or vapor is charged, and hard treatment is carried out on the surface of the organic silicon nanometer coating. According to the preparation method disclosed by the invention, the traditional organic carbonate hydroxide compound monomer is replaced by the organic silicon monomer, each silicon atom at least provides 1-4 active sites, high activity is achieved, a part of oxygen is introduced into the monomer, organic silicon can be oxidized into nanometer silicon dioxide, and the hardness of the coating can be greatly increased due to a dispersion strengthening effect.

The invention belongs to the technical field of manufacturing of gallium-nitride-based films and gallium-nitride-based devices and provides a gallium-nitride-based film on a graphene-modified patterned metal substrate and a preparation method of the gallium-nitride-based film on the graphene-modified patterned metal substrate. Patterned metal is used as the substrate; a catalytic metal layer is prepared on the metal substrate through a magnetron sputtering method firstly; and then, an electron cyclotron resonance-plasma enhanced metal organic chemical vapor deposition method is adopted to sequentially conduct nitrogen plasma cleaning on the catalytic metal layer, prepare a graphene layer, prepare an AlxGayIn1-x-yN buffering layer and prepare AlxGayIn1-x-yN epitaxial layer. The gallium-nitride-based film which is low in dislocation density and high in crystalline quality can be prepared on a low-cost non-monocrystal metal substrate. The prepared gallium-nitride-based film can be directly used as a template substrate and the like of the gallium-nitride-based devices and has a broad application prospect.