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Preparation method of alumina film

A technology of aluminum oxide and thin film, which is applied in the field of surface engineering, can solve the problems of high deposition temperature and low deposition rate, and achieve the effects of reducing deposition temperature, increasing deposition rate and rapid deposition

Inactive Publication Date: 2012-04-11
NO 510 INST THE FIFTH RES INST OFCHINA AEROSPAE SCI & TECH
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  • Abstract
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  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a low-temperature and rapid preparation method for high-quality aluminum oxide film to overcome the problems of high deposition temperature of aluminum oxide film and low deposition rate caused by metal target poisoning in the prior art. The substrate can be extended to flexible polymer films, greatly expanding the application range of alumina films

Method used

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Embodiment

[0022] A method for preparing an aluminum oxide film, said method comprising the following steps:

[0023] (1) Put the 50 μm thick polyimide film substrate in the vacuum chamber, and evacuate the vacuum chamber until the pressure in the vacuum chamber is 2.0×10 -3 Pa;

[0024] (2) Carry out argon ion bombardment treatment to substrate with ion source, improve the adhesive force of plating film layer; Wherein argon gas flow rate is 15sccm, ion beam discharge voltage is 280V, and ion beam current is 1A;

[0025] (3) The aluminum oxide thin film was deposited by oxygen ion beam assisted pulse reactive magnetron sputtering technology, the process and process parameters are as follows:

[0026] The purity of the metal aluminum target used for sputtering is 99.99%. The target is long and the area is 560mm×80mm. The distance between the target and the substrate is 100mm. The sputtering working gas is argon and oxygen with a purity of 99.99%. Accounting for 86% to 89%, the sputterin...

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Abstract

The invention relates to a preparation method of an alumina film and belongs to the technical field of surface engineering. The method comprises the following steps: putting a flexible polymer film base in a vacuum chamber, and vacuumizing the vacuum chamber till pressure in the vacuum chamber is less than or equal to 2.0*10<-3> Pa; carrying out argon ion bombardment on the base with an ion source, thereby improving the adhesion of a plated film layer, wherein the flow of argon is 15sccm, the discharge voltage of an ion beam is 280V, and the current of the ion beam is 1A; and depositing an alumina film by using an oxygen ion beam aided impulse reaction magnetron sputtering technology, wherein a target source is an aluminum target. In the preparation process, the base is always maintained at room temperature, thus the damage of high temperature to the flexible polymer film base can be avoided; and the rapid deposition of the high-quality alumina film can be realized on the flexible polymer base.

Description

technical field [0001] The invention relates to a method for preparing an aluminum oxide film, which belongs to the technical field of surface engineering. Background technique [0002] Al 2 o 3 Thin film is an important functional thin film material. Due to its high dielectric constant, high thermal conductivity, strong resistance to radiation damage, strong resistance to alkali ion penetration, and transparency in a wide wavelength range, it has many excellent physical properties. , chemical properties, so that it has a wide range of applications in many fields such as microelectronic devices, electroluminescent devices, optical waveguide devices and anti-corrosion coatings. [0003] Al 2 o 3 There are many ways to prepare thin films, such as: magnetron sputtering, ion beam assisted deposition (IBAD), pulsed laser deposition (PLD), electron beam physical vapor deposition, chemical vapor deposition (CVD), atomic layer deposition (ALD) and Sol-gel (Sol-Gel), etc. Pulse...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/35
Inventor 王金晓冯煜东王艺王志民赵慨速小梅王虎杨淼
Owner NO 510 INST THE FIFTH RES INST OFCHINA AEROSPAE SCI & TECH
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