2643 results about "Ion source" patented technology

The invention provides a self-adaptive error compensation method and system for focused ion beam equipment, and the method comprises the steps: obtaining a real-time error signal set generated by the focused ion beam equipment in a machining process, training a self-adaptive error compensation model according to the real-time error signal set, and generating an error compensation parameter set; inputting the error compensation parameter set into a control unit of the focused ion beam equipment, and generating a real-time compensation control instruction set; adjusting an ion source parameter and a deflection electrode voltage parameter of the focused ion beam equipment according to the real-time compensation control instruction set, and outputting an adjusted ion beam path parameter set; and performing ion beam processing on the target processing area according to the adjusted ion beam path parameter set, and monitoring morphology feature data of the processed area in real time to verify an error compensation effect. According to the invention, harmful effects caused by thermal effects, electric fields or magnetic fields can be eliminated, and the self-adaptability and long-term reliability of a compensation strategy are ensured.

The invention relates to a vacuum etching control system and a vacuum etching machine. The vacuum etching machine comprises a vacuum cavity, an ion source and a rotary workpiece table, wherein the ion source and the rotary workpiece table are arranged in the vacuum cavity; wherein the rotary workpiece table and the ion source are respectively connected to an industrial personal computer arranged outside the vacuum cavity; the rotary workpiece table rotates and swings the workpiece disc in the etching process, the ion source outputs ion beams to etch workpieces to be etched on the workpiece disc, and the industrial personal computer controls the ion source to output the ion beams with set parameters according to the current etching process. The maximum safety angle of swinging of the workpiece disc is calculated according to the target position of the rotary workpiece table in the vacuum cavity, the coverage range of swinging of the workpiece disc and the position parameters of all parts in the vacuum cavity, and the workpiece disc is controlled to swing within the maximum safety angle; according to the technical scheme, the internal space of the vacuum cavity is utilized to the maximum extent, the limitation on the etching process is reduced, the etching process effect is improved, and most vacuum etching process requirements are met.

The invention discloses a high-gradient particle accelerator and a cancer treatment device, and the high-gradient particle accelerator comprises an ion source which is used for generating and leading out a particle beam for treatment; an inlet of the superconducting radio frequency quadrupole field accelerator is connected with the ion source through a low-energy transmission line, and the superconducting radio frequency quadrupole field accelerator is used for pre-accelerating the particle beam generated by the ion source to obtain a low-energy particle beam; an inlet of the superconducting linear acceleration section is connected with an outlet of the superconducting radio frequency quadrupole field accelerator through a first beam transport line, and the superconducting linear acceleration section is used for accelerating the low-energy particle beam led out by the superconducting radio frequency quadrupole field accelerator again to obtain an intermediate-energy particle beam; and an inlet of the annular accelerator is connected with an outlet of the superconducting linear acceleration section through a second beam transport line, and the annular accelerator is used for carrying out ultimate acceleration on the intermediate-energy particle beam led out by the superconducting linear acceleration section so as to obtain a high-energy particle beam with target energy. The scheme that the superconducting linear accelerator is combined with the annular accelerator is adopted, so that particle beam energy is accelerated to target energy meeting cancer treatment.

The invention relates to electron beam evaporation coating equipment and an application method thereof. The electron beam evaporation coating equipment comprises an evaporation chamber, an electron gun system, a first vacuumizing system, a heating table mechanism, a sample table mechanism and an ion source system, the sample table mechanism is rotationally connected with the heating table mechanism, and the sample table mechanism comprises a substrate clamping part for clamping a substrate; the ion source system is connected with the top of the evaporation chamber and is used for cleaning the substrate; the first driving system is used for driving the first rotating shaft to rotate; the second driving system is used for driving the second rotating shaft to rotate; the second rotating shaft drives the heating table mechanism and the sample table mechanism to synchronously and integrally overturn; and when the sample table mechanism turns over to enable the substrate clamping part to be opposite to the ion source system, the substrate can be placed, cleaned and turned over. The device can be turned over to a specific angle, the interaction between film bases can be improved through special dip angle film coating, and the binding force is improved. The sample table mechanism can turn over to enable the substrate to directly face the ion source system.

The invention discloses a high-temperature ion source ion sampling interface with a built-in phase change working medium heat convection system, and relates to the technical field of high-temperature plasma source and ion or atom detection interface application. The orifice is formed in the center of the interface main body and is used for accessing high-temperature plasma; the interface center edge part is arranged on the periphery of the orifice and is used for being in direct contact with high-temperature plasma; the invention relates to a phase-change heat exchanger which comprises a connector center edge part, a heat convection system is arranged on the periphery edge part of the periphery of the connector center edge part, the heat convection system comprises one or more closed-loop cavities, the closed-loop cavities are filled with filler, and phase-change working media are injected into the closed-loop cavities. The invention aims to solve the problems of difficulty in heat dissipation, limited material selection and the like of the ion sampling interface of the high-temperature ion source.

The invention provides a system and a method for off-line measurement of a cesium evaporation rate in a fusion device. The system comprises a vacuum chamber, a cesium crucible assembly, a heating assembly, a film thickness meter, a laser absorption spectrum system and a vacuum pumping unit. According to the invention, an ultrahigh vacuum environment is provided for the whole device including the vacuum chamber by using the vacuum pumping unit; then the cesium crucible and the conveying pipeline are heated through a heating assembly, so that effective evaporation of cesium is guaranteed, and deposition of cesium on the wall face of the pipeline is reduced; measuring the deposition thickness of cesium and the concentration of cesium atoms by using a film thickness meter and a laser absorption spectrum system, and checking the measurement results of the two diagnosis methods mutually; the cesium evaporation rate is measured, and the quantitative relation between the cesium evaporation rate and the heating temperature is obtained; and finally, a measurement system is transplanted into a negative ion source, and the cesium injection amount in the vacuum stage is monitored in real time. Effective data and technical support are provided for cesium flow control in the magnetic confinement nuclear fusion negative neutral beam injection system.

The invention belongs to the technical field of aircraft oil leakage monitoring, and relates to an aircraft oil leakage detection method based on a high-sensitivity mass spectrometry technology, and the method comprises the steps: obtaining a time-resolved mass spectrogram of aviation kerosene molecules in a sample testing stage, and storing the time-resolved mass spectrogram in a database; then oil gas molecules are captured at leakage-prone points of an aircraft pipeline system through a gas collection probe, the captured oil gas molecules are transmitted to an ion source end of a proton transfer reaction mass spectrometer through a negative pressure transmission system to be ionized to generate ions, and the ions are analyzed by a mass analysis system to obtain a mass spectrum; comparing the mass spectrogram obtained by analysis with a time-resolved mass spectrogram in a database, and judging whether leakage occurs or not; based on the method, the problems of insufficient anti-interference capability, difficulty in sample collection and the like of a high-sensitivity mass spectrum oil gas leak detection method can be solved in a targeted manner, and the functions of environmental interference suppression, efficient collection of oil gas molecules, improvement of spatial scanning resolution and the like can be realized at the same time.

The invention discloses a method for determining the purity of electronic-grade hexafluoroethane, and relates to the technical field of the purity of hexafluoroethane, and the method comprises the following steps: vacuumizing a specific sampling container to 10 <-3 > Pa to 10 <-2 > Pa, forming a super-hydrophobic coating on the inner wall, sampling in a temperature-controlled, humidity-controlled and pressure-controlled environment, and removing water and impurities through two-stage pretreatment; enhancing analysis by using a gas chromatograph, a specific carrier gas, a column temperature program, a micro-fluidic chip and an ion mobility spectrometry; then secondary scanning analysis is carried out by using a mass spectrometer double ion source and a calibration system; and finally, learning and matching an algorithm through a data processing system machine. Samples can be accurately collected and pretreated, gas chromatography and mass spectrometry analysis is more accurate and efficient, a data processing system can accurately determine impurities and purity, multiple measurement data can be counted and analyzed, the result reliability is improved, all parts of the system are optimized and matched, the accuracy and stability of the whole process are guaranteed, and the purity is calculated; the method further comprises statistical analysis of multiple measurement data.

A processing system that includes an ion source to direct an ion beam at a workpiece, and an angle measurement system, is disclosed. The angle measurement system includes a current measurement device, such as one or more Faraday sensors, that may be moved in at least two orthogonal directions. The current measurement device scans in a first direction, seeking the largest current measurement. The current measurement device then moves to a second position in the second direction and repeats the scanning procedure. Based on data collected at two different locations in the second direction, the angle of incidence of the incoming ion beam may be determined.

The preparation method of the short-wave-pass ultraviolet optical filter comprises the following steps: S1, cleaning a product serving as a glass substrate of a lens; s2, putting the lens into a tool clamp, and hanging the lens into a coating machine; s3, vacuumizing and radio frequency ion source cleaning are carried out; s4, a short-wave pass film system 80.04 H, 90.05 L, 75.25 H, 79.63 L, 66.91 H, 101.42 L, 52.56 H, 105.14 L, 59.19 H, 92.56 L, 62.15 H, 98.59 L, 55.4 H, 102.89 L, 63.02 H, 95.45 L, 60.9 H, 107.93 L, 58.64 H and 55.22 L is plated on the first face of the lens, electron beam evaporation and radio frequency ion source assistance are used for evaporation, the Ta2O5 deposition rate is 0.4 nm / s, and the SiO2 deposition rate is 1 nm / s; s5, cooling and taking out; s6, repeating the steps S1 to S3; s7, plating the second surface of the lens with an antireflection film system of 16.53 H, 26.98 L, 28.44 H and 76.55 L; and S8, cooling and taking out.

The invention discloses a plasma ion three-dimensional flow velocity distribution detection system and method, and belongs to the technical field of plasma diagnosis. The system comprises a Mach probe, a controllable voltage source, a sampling resistor and a voltage acquisition system, the Mach probe, the sampling resistor and the controllable voltage source are connected in series through wires to form a loop, and the voltage acquisition system is connected in parallel with the controllable voltage source and the sampling resistor and is used for acquiring the voltage of the controllable voltage source and the sampling resistor. According to the detection method, on the basis of the multi-axis vector synthesis principle, ion flow velocity components in different planes are obtained by inserting a Mach probe in the three-axis direction, and a three-dimensional flow velocity component is calculated through a vector synthesis algorithm. According to the invention, the local flow field structure in the ion source can be diagnosed, the spatial distribution characteristic of the ion flow velocity can be revealed, the spatial resolution is high, the velocity information of particles can be directly provided, the three-dimensional data of the ion flow velocity measurement can be synthesized without complex optical path rotation or multiple scanning, and the experimental device is simple and low in cost.

The invention relates to a magnetron sputtering coating device and a coating method. The magnetron sputtering coating device comprises a reaction chamber, a magnetron target, an ion source and a sample table, the reaction chamber is of a vacuum sealing structure; the magnetic control target is fixed and communicated with the bottom surface of the reaction chamber; the ion source comprises a first ion source and a second ion source which are symmetrically arranged, and the first ion source and the second ion source are respectively fixed and communicated with the side surfaces of the two ends of the reaction chamber; the ion source comprises a first gas inlet, a transmission channel and an outlet, and the first gas inlet is used for introducing reaction gas into the ion source from the outside of the reaction chamber; and the sample table is positioned at the top end of the reaction chamber. According to the method, the symmetrical double-ion-source ionization reaction gas is matched with sputtering of the magnetron target, and the film is coated on the substrate in a reaction manner, so that the ionization rate of the gas is increased, the target poisoning phenomenon during sputtering is inhibited, the film coating rate is increased, and the preparation of the single-crystal or polycrystalline film at the low temperature is realized.

The invention discloses a microwave-radio frequency mixing coupled plasma discharge and modulation system and method, and relates to the technical field of ion beam processing, and a gas distributor conveys process gas to an ECR region and a radio frequency enhanced discharge chamber; adjusting the power of the microwave antenna to enable the process gas in the ECR region to form initial plasma; adjusting the voltage of the electron leading-out grid electrode, and leading out electrons in the initial plasma into the radio frequency enhanced discharge chamber; the radio-frequency power supply loads radio-frequency voltage to the radio-frequency coil, so that electrons collide with process gas in the radio-frequency enhanced discharge chamber to form high-density plasma; adjusting the ion extraction grid to enable the ions in the high-density plasma to form an ion beam current; if the density of the ion beam meets the stability requirement, determining the ion beam output by the ion extraction grid as a target ion beam for etching; otherwise, each power supply is adjusted until the target ion beam current is obtained. According to the invention, long-time efficient and stable etching of the ion source is realized.

A preparation method for improving the etching resistance of an yttrium oxide coating comprises the following steps that after a high-purity sintered aluminum oxide substrate subjected to ultrasonic cleaning is fed into a coating process chamber, the coating process chamber is vacuumized to reach a preset vacuum degree; argon is introduced into the coating process chamber through the first gas ion source, and argon plasma is released after ionization so as to carry out plasma cleaning on the high-purity sintered alumina substrate; an yttrium oxide coating is deposited on the surface of the high-purity sintered aluminum oxide substrate subjected to plasma cleaning in a magnetron sputtering mode, meanwhile, oxygen is introduced into the coating process cavity through a second gas ion source, oxygen plasma is released after ionization, and oxygen vacancies are formed in the yttrium oxide coating. According to the method, the oxygen plasma is adopted to participate in the deposition process of the yttrium oxide coating, so that oxygen vacancies are formed in the yttrium oxide coating, and the physical etching resistance of the yttrium oxide coating is improved.

The invention discloses a pulsed neutron generator control system based on LabVIEW, and the system comprises a neutron generator industrial personal computer which operates a virtual human-computer interaction interface developed based on LabVIEW; the console core board carries a DSP main control chip and is embedded into a real-time operating system; the driving sampling board is connected with the console core board and is integrated with a signal conditioning circuit; the neutron generator industrial personal computer communicates with the console core board through a Modbus protocol, and controls and drives the sampling board to output control signals of the three independent power supply ion sources, the storage and the acceleration pole to the neutron tube; wherein the console core board generates three paths of PWM signals with the PWM frequency of 2.5 kHz and the step length of 8191, and the three paths of PWM signals are converted into analog control signals through the driving sampling board. According to the control system, the PWM control precision is greatly improved, the voltage control precision is improved to 0.012% (100% higher than that of a conventional scheme) through the combination of the 8191 step length (13-bit resolution) and the 2.5 kHz frequency, and the neutron yield fluctuation is controlled within + / -1.5%.

One ECR ion source generates a He < 2 + > ion beam, the other ECR ion source generates a H2 < + > ion beam, the He < 2 + > or H2 < + > ion beam is selected by a deflection magnet and then transmitted and focused by LEBT to enter an RFQ, the focusing factor of the RFQ is increased and then reduced, DTL is IH-DTL designed by adopting KONUS beam dynamics and comprises two KONUS periods, the working frequencies of the RFQ and the DTL are respectively 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, 425MHz, after He < 2 + > or H2 < + > ion beams are accelerated by RFQ and DTL, the MEBT distributes and transmits the ion beams to a downstream accelerator and an isotope production device. According to the proton helium ion implanter provided by the invention, the particle beam can meet the injection requirement of a subsequent synchrotron, the miniaturization of the proton helium ion implanter is realized, and the production of medical isotopes is considered.

The invention provides an ion beam polishing multi-working-condition removal function obtaining method which comprises the steps that according to a to-be-machined optical surface shape and a planned movement track of an ion source relative surface shape, the change range of an ion beam incident angle and the change range of a machining distance in a polishing machining task are determined; carrying out limited times of single-point etching experiments, and detecting the surface shape of the workpiece after the single-point etching experiments; calculating a processing amount distribution, and calculating a removal function considering the incident angle of the ion beam and the processing distance based on the processing amount distribution data and the processing time; training an artificial neural network by taking the removal function as training data; and on the basis of the trained neural network, obtaining a removal function fitting parameter pair according to the actual processing task requirement, and performing inverse processing on the removal function fitting parameter pair to obtain a removal function of the actual processing point. According to the removal function obtained through the method, the influence under multiple working conditions is considered, and the current high-precision machining requirement for the high surface slope or various non-planar optical surface shapes can be better met.

The invention discloses an ignition control method of a remote plasma source in the technical field of remote plasma sources, which comprises the following steps: S1, setting a gas current excitation threshold value, and introducing excitation gas; s2, judging whether an ignition signal is received or not, and if yes, closing a relay and entering a constant current stage; s3, whether system ignition is normal or not is judged, and if not, the ignition voltage is adjusted through a self-learning type ignition threshold value calibration method; s4, the output power is improved, and the ignition voltage is adjusted through an ignition threshold calibration method during the period; s5, entering a constant power stage when the output power reaches the full-load power; according to the self-learning type ignition threshold value calibration method, gas flow, gas pressure and cavity temperature are collected in real time, a current load impedance value is predicted through an LSF-BP model, and an ignition voltage threshold value is updated according to the current load impedance value. According to the method, the ignition threshold is dynamically adjusted according to the operation condition, the ignition stability can be effectively improved, and equipment damage and maintenance cost are reduced.

MS-based methods and systems are provided herein in which a desorption solvent desorbs one or more analyte species from an SPME device within a sampling interface that is fluidly coupled to an ion source for subsequent mass spectrometric analysis. In accordance with various aspects of the applicants teachings, the sampling interface includes an internal sampling conduit that provides increased interaction between the desorption solvent and the sampling substrate, thereby improving mass transfer (e.g., increased extraction or desorption speed).

The invention discloses an ion source automatic beam adjusting method, a radiotherapy system and related equipment, and relates to the technical field of radiotherapy, and the method comprises the steps: monitoring and adjusting a plurality of control parameters in real time, and obtaining an optimal control parameter combination; under the optimal control parameter combination, the variable quantity of each control parameter before and after adjustment and the performance change of the proton beam are obtained; performing a pulse width charge test according to the variation of each parameter before and after adjustment and the performance change of the proton beam; obtaining an optimal adjustment parameter and an adjustment amount through a pulse width charge test result; and through the optimal adjustment parameter and adjustment amount, automatic beam adjustment is realized, stable and efficient acceleration of the proton beam in the synchrocyclotron system is realized, and the stability and consistency of the proton beam are ensured.

The invention discloses a linear anode layer ion source, and relates to the technical field of vacuum ion sources, an anode cooling channel is arranged in an annular anode, the bottom of the anode cooling channel is connected with two anode water pipes, and each anode water pipe sequentially penetrates through an annular cooling plate and a waterway plate to extend to the outside and is fixed on the waterway plate; the magnet mechanism is arranged in the annular cooling plate and is adsorbed on the waterway plate, the inner cathode is fixed at the top of the magnet mechanism and is in contact with the top of the annular cooling plate, and the annular outer cathode is fixed at the top of the cathode frame and is in contact with the top of the annular cooling plate; a cathode cooling channel is arranged at the top of the waterway plate, the top of the cathode cooling channel is of an open structure and is in contact with the bottom surface of the annular cooling plate, and the cathode cooling channel is connected with two cathode water pipes. According to the linear anode layer ion source, the anode and the cathode can be fully and uniformly cooled, and the deposition performance and the stability of equipment are prevented from being influenced.

A superconducting proton cyclotron (100). The superconducting proton cyclotron (100) comprises a main cyclotron system (10), a cyclotron auxiliary system (20) and a cyclotron control system (30). The main cyclotron system (10) comprises an ion source (11), a central region (12), a superconducting magnet system (13), a radio frequency system (14) and a lead-out region (15). The ion source (11) is used for generating a proton beam; the central region (12) is used for leading out the proton beam of the ion source (11) and performing beam focusing inside the central region (12); the radio frequency system (14) leads out and accelerates the beam of the central region (12); a static magnetic field generated by the superconducting magnet system (13) can constrain the proton beam and accelerate same to target energy; the lead-out region (15) can lead out the proton beam.

ICP-MS includes: an ion source to ionize a sample component; a vacuum chamber (4-into which generated ions are introduced; a cell inside the vacuum chamber to bring the ions into contact with a predetermined gas; a mass spectrometer unit at a later stage of the vacuum chamber to perform mass spectrometry of ions having passed through the cell or ions derived from the ions; a first gas introduction unit to introduce a predetermined gas into the cell; a second gas introduction unit to introduce a predetermined gas into the vacuum chamber and outside the cell; and controllers to control gas introduction such that a gas is introduced by the first gas introduction unit when analysis is performed while bringing a gas into contact with ions, whereas a gas is introduced by the second gas introduction unit when analysis is performed without bringing a gas into contact with ions.

The invention discloses a cavity surface treatment method of a semiconductor laser and the semiconductor laser, and the method comprises the steps: stacking and placing laser chips subjected to atmospheric cleavage and pretreatment into a sample injection cavity for first heat treatment, and then sequentially carrying out second heat treatment, injecting reducing gas for impact and carrying out third heat treatment in a growth cavity, injecting fluorine-containing ion source gas to perform surface fluorination treatment on the surface of the GaAs substrate so as to generate a wide-band-gap metal fluorination layer with a first thickness on the surface of the GaAs substrate, injecting hydrogen-containing nitrogen ion source gas and an evaporation metal aluminum source, and generating a hydrogenated aluminum nitride layer with a second thickness on the metal fluorination layer, and a passivation layer composed of the metal fluorination layer and the hydrogenated aluminum nitride layer is obtained. According to the invention, the surface state density of the cavity surface of the GaAs-based semiconductor laser can be reduced, and the optical catastrophe damage resistance is enhanced, so that the performance and reliability of the semiconductor laser are improved.

The invention relates to the technical field of yield control, in particular to a neutron generator yield control method and system. The method comprises the following steps: establishing a polynomial model by using historical yield data to predict a target efficiency attenuation factor; dynamically determining neutron event boundaries in the pulse integral value and the pulse width two-dimensional characteristics based on the attenuation factor, and counting the neutron event boundaries; the yield deviation and the change rate are calculated, and when the deviation exceeds a threshold value, feedforward compensation is carried out on the target yield; and selecting a three-dimensional lookup table, an input deviation, a change rate and a current high voltage according to the interval to which the attenuation factor belongs, and cooperatively determining the adjustment amount of the ion source current and the accelerator high voltage. According to the scheme, the measurement and control problems caused by aging of the target piece can be solved, and the precision, the response speed and the long-term stability of yield control are improved.

The invention belongs to the technical field of isotope detection, and particularly relates to a plutonium isotope accelerator mass spectrometry measuring device based on positive ion ionization, which comprises a positive ion source for ionizing plutonium isotope to generate positive ions, the positive monovalent ions of the plutonium isotope accelerated by the accelerating tube enter the stripping system and then are stripped into multi-charge state positive ions, 3 + charge state plutonium isotope ions are selected by the analysis magnet for analysis, and after interference of various analysis fragments is eliminated by the electrostatic analyzer, the 3 + charge state plutonium isotope ions are measured by the detector. The ionization efficiency of the plutonium isotope is improved, the sample preparation process is simplified, and the in-situ analysis of the sample can be realized.

The invention discloses a method for detecting trace elements in a GH4169 high-temperature alloy by using secondary ion mass spectrometry, which specifically comprises the following steps: A1, firstly, carrying out necessary pretreatment on a GH4169 high-temperature alloy sample to remove surface pollution and an oxide layer; a2, selecting a time-of-flight secondary ion mass spectrometer, setting proper analysis parameters, and selecting a double-plasma O2 + ion source. The invention relates to the technical field of metal material trace chemical component analysis. According to the method for detecting the trace elements in the GH4169 high-temperature alloy by using the secondary ion mass spectrometry, a sample pretreatment process of the GH4169 high-temperature alloy is optimized, a double-plasma O2 + ion source and a low-energy electron gun charge compensation system of a time-of-flight secondary ion mass spectrometer are innovatively configured, deep analysis and a three-dimensional reconstruction algorithm are combined, and the trace elements in the GH4169 high-temperature alloy are detected. The sensitivity, the spatial resolution and the data reliability of trace element detection are obviously improved.

To improve the performance of a mass spectrometer.SOLUTION: An ion trap type mass spectrometer that ionizes a sample adhering to a test object and separates ions on the basis of the mass and charge, comprises: a heating unit 1 which heats and vaporizes a sample; a sample introduction tube 10 which introduces the sample vaporized by the heating unit 1 to an ion source 15; the ion source 15 which applies a charge to the sample; a container 210 whose inside is in the vacuum state; a first pore 51 which introduces the sample ionized by the ion source 15 to the container 210; an ion trap unit 300 which is provided in the container 210; and a second pore 71, an intermediate lens 90 and an adjustment lens 110 which are sequentially provided between the first pore 51 and the ion trap unit 300 and transports the ions being the sample introduced to the container 210 to the ion trap unit 300. In the adjustment lens 110, the amount of ions passing through the adjustment lens 110 is controlled by a control unit connected to the mass spectrometer.SELECTED DRAWING: Figure 1

The invention relates to a high-speed directional molecular flow generating device and application thereof. The device comprises an air supply system, an ion source, a grid electrode assembly, a neutral pore plate and a charged particle swallowing device, the gas supply system is communicated with the gas inlet end of the ion source through a pipeline and provides neutral gas for the ion source; the ion source is used for ionizing the neutral gas into plasma, and the gas outlet end of the ion source is sequentially connected with the grid electrode assembly, the neutral pore plate and the charged particle swallowing device in series; the grid electrode assembly is used for extracting ions, accelerating ions and focusing ions; the neutral pore plate is grounded and is used for enabling passing ion beams to be subjected to an Auger process and converting ions into neutral molecules; and the charged particle swallowing device is used for absorbing unconverted ions and drift electrons. According to the invention, the complexity is low, the generated high-speed oriented molecular flow has good collimation, and an important experimental basis is provided for development and ground calibration of a space vacuum measuring instrument.

The invention relates to the field of mass spectrometry, and describes a mass spectrometer based on multi-electrode coordination of a Jooden well. A multi-port ion source configured for multi-port input of electrons of ionization of gas molecules in a well and ions in an ion source outside the well, the ports being autonomously usable, comprising two external electrodes and four internal electrodes configured to excite periodic movement of ions in the well along an axis of symmetry and to detect signals caused by ions of secondary potential oscillation in the well, wherein ions are introduced into the trap from an external source with a slot, and ion movement is excited by applying an alternating voltage or the like to the electrodes. Or using a slot to introduce ions from an external source into a well in an external electrode, applying a potential to an internal electrode to create an electric field, the size of which is in a quadratic relationship with the coordinates, the electrodes having a specific equipotential surface geometry. Pulsed potentials can be applied to capture ions, multiple external ion sources can be equipped, and if the ion sources are not combined, each can be provided with a separate port. The mass spectrometer is uniquely designed in the aspects of ion input, excitation, detection, ion source configuration and the like.