The present invention discloses a manufacturing method of CVD single-
crystal diamond for long-time one-time growth, which comprises the following steps: (1) Seed screening; (2) Seed pretreatment; (3) Using an MPCVD device for single-
wafer growth, the steps are as follows: a. Place the seed on a terraced
molybdenum sample substrate stage, place it in the MPCVD device, evacuate the vacuum, introduce H2, ignite and start the
glow discharge to heat up to 700-780 °C, then introduce O2 for
etching for 60 minutes, and then introduce CH4 and N2, with a
microwave power of 8-9 kw and a
gas pressure of 17-18 KPa, and maintain the temperature at 800-850 °C for 2 h; b. Adjust the
microwave power to 9-9.5 kw and the
gas pressure to 18-19 KPa. When the temperature reaches 850-900 °C, introduce CH4 and N2 and maintain for 30 minutes. Adjust the
microwave power to 9.5-10 kw and the
gas pressure to 19-20 KPa, and maintain the temperature at 1000-1030 °C. Regularly control the height of the substrate stage according to the growth rate at a set time period, regularly close the introduction of CH4, N2, and O2 for
etching for 30 minutes, and then re-introduce CH4, N2, and O2 to resume growth. It realizes one-time stable growth for 700 hours, the good product rate is over 70%, and the product thickness reaches 6.0 mm.