903 results about "Metallic electrode" patented technology

The invention discloses a vortex beam orbital angular momentum detector based on surface plasmon and a detection method, and belongs to the field of micro-nano photonics and photoelectric detection. The detector is based on a plane photoelectric detector of a metal-semiconductor-metal type, a vortex light field beam splitting structure is arranged on a metal electrode on one side of the detector or between two metal electrodes, the vortex light field beam splitting structure comprises an incident coupling grating, an incident light field carrying different orbital angular momentums can be split into plasmons in different directions, and the plasmons in different directions can be split into a vortex light field. The single detector resolution of the orbital angular momentum of the vortex beam is realized through the direction and propagation loss difference of plasmons. The detector is compatible with an existing semiconductor technology, the structure is simple, vortex light beams carrying high-order orbital angular momentum can be detected, and the rotation direction of a vortex light field can be detected.

The invention provides an electro-optical modulator and a modulation method thereof, the electro-optical modulator comprises a substrate, a buried oxide layer and a lithium niobate waveguide layer are sequentially stacked on the substrate, and the lithium niobate waveguide layer comprises a first optical waveguide and a second optical waveguide; the electrode layer comprises a composite traveling wave electrode and a direct-current electrode, and the direct-current electrode is arranged on one side, in the signal transmission direction, of the composite traveling wave electrode; wherein the composite traveling wave electrode comprises a metal electrode and a polymer electrode, the metal electrode is embedded into the buried oxide layer, the polymer electrode is arranged on the surface of the buried oxide layer, and the composite traveling wave electrode is arranged between the first optical waveguide and the second optical waveguide and arranged on the side faces of the first optical waveguide and the second optical waveguide respectively; wherein the direct current electrode is arranged between the first optical waveguide and the second optical waveguide. The electro-optical modulator is high in electro-optical conversion efficiency, the plasma effect caused by light field coupling is effectively avoided, and the light loss of the device is remarkably reduced.

Disclosed in the present application are a novel passivated selective contact structure, a solar cell, a solar cell assembly, and a solar cell system. The novel passivated selective contact structure comprises a silicon substrate, wherein the surface of the silicon substrate comprises a front side of the silicon substrate and / or a back side of the silicon substrate, and the surface of the silicon substrate comprises a passivated selective contact region and a non-passivated selective contact region; the non-passivated selective contact region comprises a passivation anti-reflection layer disposed on the surface of the silicon substrate; and the passivated selective contact region comprises a passivation layer, a selective transport layer and a metal electrode, which are sequentially stacked from inside to outside, the passivation layer covers a partial region of the surface of the silicon substrate, and the projection of the selective transport layer on the surface of the silicon substrate covers a partial region of the surface of the silicon substrate. By means of a synergistic effect among the passivation anti-reflection layer, the selective transport layer and the passivation layer in the present application, an excellent passivated contact effect is achieved.

The invention discloses a perovskite solar cell based on a cross-linked interface passivation layer, and relates to the technical field of photovoltaic cell materials. The perovskite solar cell sequentially comprises a transparent conductive substrate, an electron transport layer, a perovskite light absorption layer, a crosslinking interface passivation layer, a hole transport layer and a metal electrode from bottom to top, and the cross-linked interface passivation layer is made of a 4-[10-(4-{(1, 2, 2-trifluorovinyl) oxy} phenyl)-10H-phenoxazine-2-yl] phenylphosphonic acid material. The cross-linked interface passivation layer can significantly improve the photovoltaic performance and stability, the intrinsic stability of the device is greatly enhanced by the cross-linked network, and in a double-85 aging test of 85 DEG C / 85% RH, the time required for attenuating the efficiency of the device to 80% of an initial value can exceed 1000 hours.

The present invention provides an organic electric element including a metal patterning layer formed on the outside of a metal electrode and an electronic device thereof, and by forming a patterning auxiliary photosensitive layer made of a material with excellent photosensitivity under the metal patterning layer, it is possible to easily measure the thickness of the metal patterning layer.

The invention relates to a photovoltaic cell and a preparation method of the photovoltaic cell. The photovoltaic cell comprises: a substrate having a textured surface, the textured surface comprising a plurality of first pyramids and a plurality of second pyramids, the plurality of second pyramids being arranged between the plurality of first pyramids; the tower footing size of the second pyramid is larger than that of the first pyramid, and the tower height of the second pyramid is larger than that of the first pyramid. According to the invention, the scattering capability of broadband light can be enhanced, the problem that the traditional single-scale pyramid texture surface is insufficient in scattering of long-wave light is effectively improved, and the light capturing and absorbing effects of the photovoltaic cell are improved; the dual-scale pyramid suede can be better matched with the passivation contact layer, so that the surface recombination phenomenon is reduced, and the high open-circuit voltage of the photovoltaic cell can be maintained; the second pyramid can also provide an adaptive contact basis for the metal electrode, and the contact resistance between the electrode and the substrate is reduced. Therefore, the photoelectric conversion efficiency of the photovoltaic cell can be effectively improved.

The invention discloses a laser chip ohmic contact annealing optimization method and related equipment. The method comprises the steps that a metal electrode and a conductive mark layer are formed on the surface of a semiconductor through deposition; applying electrical excitation to the conductive mark layer and collecting electrical response in the annealing temperature rise stage to establish an initial response reference of the position of the conductive mark layer; in the annealing heat preservation stage, the electrical response change of the conductive mark layer is monitored, and the real-time response is compared with the initial response reference so as to judge the ohmic contact forming state of the position where the conductive mark layer is located; and adjusting annealing process parameters according to the judgment result of the ohmic contact forming state. According to the scheme, in-situ monitoring and self-adaptive adjustment of ohmic contact forming states at different positions in the annealing process can be achieved, and the uniformity and yield of ohmic contact of the laser chip are improved.

The invention discloses intelligent tongue muscle pressure detection equipment, and relates to the technical field of tongue muscle pressure detection. Comprising an array type sensing assembly, and the array type sensing assembly comprises an array type Hall sensor, a middle elastic body and a magnetic film which are sequentially connected from bottom to top; the array type Hall sensor comprises a substrate layer, a plurality of graphene active parts are uniformly arranged on the substrate layer in an array mode, and metal electrodes are arranged on the peripheral sides of the graphene active parts. The device further comprises a handheld assembly, and the handheld assembly is connected with the array type sensing assembly. The array type sensing assembly is integrally soft and can fully combine with the deformation characteristic of human skin, and the multiple graphene active parts are arranged in an array and matched with the vertical periodic magnetization magnetic film, so that the force resolution, the sensitivity, the linearity, the hysteresis and the like are greatly improved; and a basis is provided for subsequent clinical experiments such as tongue muscle pressure test and marketization application.

The invention discloses a discrete device packaging structure based on direct lead bonding, which belongs to the technical field of semiconductor device packaging and comprises a power semiconductor chip, a drain metal substrate, a grid lead terminal, a drain lead terminal, a bonding wire and a supporting shell. The drain electrode metal substrate is connected with the lower surface of the power semiconductor chip through solder. The gate metal electrode on the upper surface of the power semiconductor chip is connected with the gate lead terminal through a bonding wire, and the source metal electrode on the upper surface of the power semiconductor chip is connected with the source lead terminal through solder. The interior of the supporting shell is filled with silica gel or an injection molding process, and the supporting shell covers the power semiconductor chip to serve as an insulating medium. The power density of the device is improved, the parasitic parameter of the whole device is reduced, and the reliability of the interconnection structure is improved.

The invention discloses a flexible hydrogel neural electrode and a preparation method and application thereof. The flexible hydrogel neural electrode comprises a flexible substrate layer, an electrode layer and a packaging layer which are sequentially arranged in a stacked mode, the flexible substrate layer and the packaging layer are each of a hydrogel fiber composite film structure formed by compounding a fiber film and hydrogel, and the fiber film is embedded in the hydrogel; the fiber film is a polycaprolactam fiber film, and the hydrogel is polyvinyl alcohol hydrogel; the electrode layer comprises a plurality of metal electrodes, and each metal electrode is provided with an electrode point and a bonding pad; the packaging layer is provided with a plurality of hole structures, and the holes are arranged corresponding to the electrode points and the bonding pads and enable the electrode points and the bonding pads to be exposed. The flexible hydrogel neural electrode provided by the invention has good biocompatibility, swelling resistance and process compatibility; meanwhile, the flexible hydrogel neural electrode can be stably applied to an implantable brain-computer interface and is used for realizing long-term stable acquisition and transmission of neural signals.

The invention relates to the technical field of biological interface sensing, in particular to a flexible stretchable stimulation electrode and a preparation method thereof, and the electrode comprises a substrate, a conductive layer, an electrode path packaging layer and a stimulation point packaging layer; the conductive layer is composed of a liquid metal electrode array arranged on the substrate; the conductive layer comprises an electrode wire area and an electrode stimulation end; the electrode channel packaging layer covers the electrode wire area. The packaging layer at the stimulation point covers the electrode stimulation end; the electrode path packaging layer is made of polydimethylsiloxane; and the packaging layer at the stimulation point is made of a polydimethylsiloxane-carbon fiber composite elastomer. The invention aims to provide a flexible stretchable stimulating electrode so as to solve the technical problems of mechanical mismatching, unstable biological interface, insufficient stimulating accuracy and the like in the long-term use process of the existing stimulating electrode.

A metal-semiconductor contact structure, a solar cell and a photovoltaic module are provided. The metal-semiconductor contact structure includes: a doped semiconductor layer; a metal electrode in contact with the doped semiconductor layer; a first conductive region provided at a contact interface between the doped semiconductor layer and the metal electrode, and including: a first conductive structure including a plurality of first metal particles distributed in the first conductive region, at least part of the first conductive structure contacting the doped semiconductor layer; and a second conductive structure, wherein the second conductive structure is radial, at least part of the second conductive structure is located on a surface of the first metal particles, and the second conductive structure has a radial direction towards the metal electrode; wherein the metal electrode, the first metal particles, and the second conductive structure all have a same metal element.

To suppress degradation of characteristics, a high frequency module includes a mounting substrate, a first signal terminal, a second signal terminal, and ground terminals, and a hybrid filter. The hybrid filter is coupled between the first signal terminal and the second signal terminal. The hybrid filter includes an acoustic wave filter having at least one acoustic wave resonator, a first inductor, and a capacitor. The pass band width of the hybrid filter is larger than that of the acoustic wave resonator. A resin layer is disposed on a first principal surface of the mounting substrate. The resin layer covers at least part of the acoustic wave filter. A metal electrode layer covers at least part of the resin layer, and is coupled to the ground terminals. The second inductor is coupled between the hybrid filter and the second signal terminal.

The invention relates to the technical field of solar energy, and discloses a metal electrode for a solar cell, a preparation method of the metal electrode and the solar cell. The metal electrode comprises a metal seed layer (which is at least one of a silver seed layer, a nickel seed layer, a zirconium seed layer, a titanium seed layer, a chromium seed layer, a nickel-silicon alloy seed layer and a copper alloy seed layer) arranged in a grid line area on the surface of a silicon substrate, and a base metal grid line (which is at least one of a copper grid line and an aluminum grid line) arranged on the surface of the metal seed layer, and a copper phosphate protection layer (which is at least one of a copper phosphate layer and an organic copper phosphate compound layer) arranged on the surface of the base metal grid line. Through cooperation of the metal seed layer, the base metal grid lines (such as copper grid lines) and the copper phosphate protection layer, the metal electrode can reduce contact resistance, ensure interface bonding force, save cost and improve corrosion resistance of the base metal grid lines, so that stability and reliability of the metal electrode in outdoor long-term use are improved, and attenuation of battery efficiency is slowed down.

The invention discloses a thin-film barium titanate electro-optical switch unit based on a composite electrode and an array thereof. The optical switch unit comprises a first waveguide optical fiber coupling module, a second waveguide optical fiber coupling module, an optical beam splitting module, an electro-optical phase shift region, an optical beam combining module, a third waveguide optical fiber coupling module and a fourth waveguide optical fiber coupling module. Wherein the composite electrode of the electro-optic phase shift region is composed of a metal electrode and a transparent conductive layer, the electrode is closer to the waveguide by utilizing the transparent characteristic of a transparent conductive material, the coupling of a light field and an electric field is effectively enhanced, and the extinction ratio is improved. Meanwhile, a barium titanate film with a high electro-optical coefficient is adopted as a waveguide material, and the performance is further optimized, so that the electro-optical switch unit has the excellent characteristics of low-voltage driving, high extinction ratio, low insertion loss and small size.

The invention relates to a preparation method of a low-resistance silicon carbide coating based on a molybdenum / tantalum metal electrode, which comprises the following steps: S1, substrate pretreatment: carrying out mechanical micro roughening, ultrasonic cleaning and drying on a Mo / Ta electrode, and then reducing to remove an oxidation film; s2, Si-rich nucleation: taking methyl trichlorosilane as a Si / C common source, hydrogen as carrier gas / reducing gas and nitrogen as an n-type doping source for gas supply to form a compact nucleation layer; s3, main body deposition is conducted, specifically, the temperature is adjusted to 1140-1180 DEG C, the total pressure is maintained to be 80-120 Torr, and gas supply continues to be conducted for deposition; s4, annealing and dechlorination: stopping methyl trichlorosilane, keeping hydrogen and nitrogen flushing, and then annealing; and S5, cooling and shaping: cooling and taking out the sample annealed in the step S4, and adjusting the surface roughness to a set value to obtain the low-resistance silicon carbide coating on the Mo / Ta electrode. Compared with the prior art, on the premise that conductivity is not sacrificed, atomic oxygen / oxygen ion resistance, sputtering resistance, thermal cycling stability and the like of the Mo / Ta electrode can be remarkably improved.

The invention discloses a polarization-dependent bipolar infrared detector based on a corner heterojunction, a preparation method and a photocurrent response polarity regulation and control method. The polarization-dependent bipolar infrared detector comprises a substrate, a corner Van der Waals heterojunction and a transferable metal electrode, wherein the corner Van der Waals heterojunction and the transferable metal electrode are sequentially stacked on the substrate from bottom to top; the corner Van der Waals heterojunction is obtained by sequentially stacking p-type semiconductors, n-type semiconductors and p-type semiconductors to form an npn junction and forming a corner by changing the crystal orientation included angle of the two p-type semiconductors; a built-in electric field is used for driving photon-generated carrier separation, so that the infrared detector works in a photovoltaic mode.

The invention relates to the field of semiconductor devices, and discloses a function-switchable oxide heterojunction photodiode and a preparation method thereof, the function-switchable oxide heterojunction photodiode comprises an insulating substrate, an N-type oxide semiconductor and a P-type semiconductor which are arranged in sequence; an II-type energy band contact heterogeneous PN junction is formed on the interface of the P-type semiconductor and the N-type oxide semiconductor; the insulating substrate and the N-type oxide semiconductor are stacked; the P-type semiconductor is locally deposited on the N-type oxide semiconductor; the metal electrode comprises a P-type ohmic electrode and an N-type ohmic electrode, the P-type ohmic electrode is located on the P-type semiconductor, and the N-type ohmic electrode is located on the N-type oxide semiconductor. The P-type semiconductor and the N-type oxide semiconductor are adopted to construct the heterojunction, the characteristic that the natural oxygen vacancy defect energy level in the oxide semiconductor captures or releases carriers under bias voltage is utilized to convert the electrical characteristic of the heterojunction, and photoelectric detection and sensing calculation function switching of the device are achieved.

The invention relates to the technical field of solar cells, and discloses a TBC cell and a preparation method thereof.The preparation method comprises the steps that a tunneling layer and an intrinsic amorphous silicon layer are prepared on the back face of a silicon wafer; a first barrier layer is locally prepared on the back surface of the intrinsic amorphous silicon layer; boron diffusion enables the intrinsic amorphous silicon layer in a non-first barrier layer region to be converted into a boron-doped polycrystalline silicon layer; removing the local first barrier layer through laser patterning to expose the intrinsic amorphous silicon layer in a laser area; performing wet etching to form a Gap region, and exposing the boron-doped polycrystalline silicon layer and the intrinsic amorphous silicon layer in a non-laser region; locally preparing a second barrier layer on the back surfaces of the Gap region silicon wafer and the boron-doped polycrystalline silicon layer; phosphorus diffusion enables the exposed intrinsic amorphous silicon layer to be converted into a phosphorus-doped polycrystalline silicon layer; removing the second barrier layer and performing texturing; according to the method, the Gap region can be easily formed, the boron-doped polycrystalline silicon layer and the phosphorus-doped polycrystalline silicon layer have no height difference, the working procedures are few, the damage is little, the cost is low, and the battery efficiency can be improved.

The invention discloses an on-chip fully-integrated optical circulator based on phase modulation. The on-chip fully-integrated optical circulator comprises a substrate, a buried oxide layer, an optical waveguide layer, an upper cladding and a metal layer used for manufacturing metal electrodes, the substrate, the buried oxide layer, the optical waveguide layer, the upper cladding and the metal layer are stacked, the optical waveguide layer comprises two input / output optical waveguide groups, a four-port resonant cavity and two metal electrode pairs, and the metal layer comprises four modulation areas; four ports of the resonant cavity are respectively connected with four interfaces of the modulation area, each input / output optical waveguide group is connected by a bent optical waveguide and coupled to the resonant cavity, the middle of the metal electrode pair is bent to form a coplanar waveguide electrode, and the middle of each two ends of the modulation area is connected by the coplanar waveguide electrode. The fully-integrated optical circulator is realized under the silicon-based substrate for the first time, is compatible with current mainstream optical integration platforms such as SOI, LNOI and LTOI, and can be widely applied to large-scale photonic integrated chips, such as the fields of optical communication, optical sensing, on-chip optical interconnection and the like.

A lithium metal electrode has no more than five ppm of non-metallic elements by mass, and is bonded to a conductive substrate. Optionally, the lithium metal electrode may be bonded on one side to a conductive substrate and on another side to a lithium ion selective membrane. The lithium metal electrode may be integrated into lithium metal batteries. The inventive lithium metal electrode may be manufactured by a process involving electrolysis of lithium ions from an aqueous lithium salt solution through an ion selective membrane, carried out under a blanketing atmosphere having no more than 10 ppm of non-metallic elements, the electrolysis being performed at a constant current between about 10 mA / cm2 and about 50 mA / cm2, and wherein the constant current is applied for a time between about 1 minute and about 60 minutes.

The invention discloses a method for preparing a perovskite solar cell based on a fused salt doped Spiro-OMeTAD hole transport layer, and the method comprises the steps: dissolving lead iodide and formamidine iodide in a mixed solvent of N, N-dimethylformamide and dimethyl sulfoxide according to a molar ratio of (0.8-1.5): 1 to prepare an FAPbI3 perovskite precursor solution; the method comprises the following steps: mixing cyclohexylamine trifluoroacetic acid and 4-tert-butylpyridine according to a molar ratio of 1: (8-14), dissolving the mixture in a 70-110 mg / mL Spiro-OMeTAD chlorobenzene solution, adding an acetonitrile solution of LiTFSi, and stirring at normal temperature to obtain a hole transport material Spiro-OMeTAD solution; spin-coating the FTO substrate with an electron transport layer material, spin-coating the electron transport layer with the FAPbI3 perovskite precursor solution, and annealing to form a perovskite thin film; the method comprises the following steps: spin-coating an ammonium butyrate iodide solution on a perovskite thin film to obtain an interface modification layer, spin-coating a hole transport material Spiro-OMeTAD solution on the interface modification layer to obtain a cyclohexylamine trifluoroacetic acid doped Spiro-OMeTAD hole transport layer, and evaporating an interface modification layer and a metal electrode on the Spiro-OMeTAD hole transport layer.

The invention provides a perovskite crystalline silicon laminated bottom cell structure, a laminated cell and a preparation method, the bottom cell structure comprises a semiconductor substrate layer, the first surface of the semiconductor substrate layer is sequentially provided with a boron doped layer, a suede, a passive film layer and a first metal electrode from inside to outside, the second surface of the semiconductor substrate layer is sequentially provided with a small suede, a tunneling oxide layer and an N-type polycrystalline silicon layer from inside to outside, the N-type polycrystalline silicon layer comprises at least two kinds of polycrystalline silicon layers which are alternately arranged in the horizontal direction and are different in thickness, and the height of the small suede is smaller than that of the suede. According to the invention, the N-type polycrystalline silicon layer is arranged into polycrystalline silicon layers with different thicknesses which are alternately arranged, so that the parasitic absorption of photons is reduced, and the current output of the bottom cell is improved. After photon parasitic absorption is reduced, the deposition thickness of the first polycrystalline silicon layer is increased, and under the condition that the second surface is a textured surface, npoly can uniformly cover the textured surface, so that the passivation level is ensured, and the conditions of exposure defects, increase of carrier recombination and reduction of cell performance are avoided.

The invention discloses a space high-temperature environment tolerant perovskite cell and a preparation method thereof, and relates to the technical field of solar cells, the perovskite cell comprises a substrate, a conductive layer, a hole transport layer, a first oxide layer, a perovskite light absorption layer, a second oxide layer, an electron transport layer, an interface layer and a metal electrode layer which are stacked in sequence, wherein the hole transport layer is made of nickel oxide; the crystal structures of the first oxide layer and the second oxide layer are perovskite crystal structures; the perovskite light absorption layer is made of inorganic metal halide with an ABX3 type structure; the interface layer is made of metal chromium; according to the invention, the problems of easy material decomposition and interface failure of the perovskite cell under a high-temperature condition are improved, and the high-temperature resistance of the perovskite cell is improved, so that the perovskite cell meets the requirement of long-term stable work in a space high-temperature environment.

The invention provides a perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a substrate, a first transparent conductive layer, a first carrier transport layer, a passivation layer, a perovskite light absorption layer, a second carrier transport layer, a second transparent conductive layer and a metal electrode which are stacked. The first carrier transport layer and the second carrier transport layer are respectively arranged on two opposite sides of the perovskite light absorption layer; the passivation layer is arranged between the perovskite light absorption layer and the first carrier transmission layer, and / or the passivation layer is arranged between the perovskite light absorption layer and the second carrier transmission layer; the material of the passivation layer comprises supramolecular ionic gel, and the supramolecular ionic gel is composed of a polymer and an imidazole halogen ionic compound. The passivation layer provided by the invention has good flexibility and bending performance, so that the film forming quality of the perovskite thin film and the photoelectric conversion efficiency and operation stability of the perovskite solar cell are improved.

The invention provides a hybrid micro / nano structure pressure sensor, a preparation method and electronic equipment. The hybrid micro / nano structure pressure sensor comprises an upper electrode, a lower electrode and an ionic conductive medium layer located between the upper electrode and the lower electrode, the surface of the upper electrode and the surface of the lower electrode are of a preset micro / nano composite structure formed through femtosecond laser etching. By introducing a programmable micro / nano composite structure etched by femtosecond laser on the surface of the metal electrode and combining with the ionic conductive medium layer, the technical problem that the existing pressure sensor is difficult to give consideration to both high sensitivity and wide detection range is solved.

Methods are proposed for manufacturing dendrite-resistant lithium metal electrodes suitable for incorporation into lithium metal batteries. In an embodiment, the method involves first electroplating a copper sheet onto a surface of a single crystal of silicon, the silicon being doped to form a p-type or an n-type semiconductor, and then further electroplating the copper sheet with lithium metal. The lithium-electroplated copper sheet thus manufactured provides a lithium electrode that is resistant to dendrite formation during cycling of lithium metal batteries when compared to conventionally manufactured lithium electrodes. Methods are further provided of manufacturing lithium sheets by directly electroplating lithium metal onto single crystals of doped silicon, the lithium sheets configured for incorporation into lithium metal electrodes that are resistant to dendrite formation during cycling of lithium metal batteries.

The invention discloses a perovskite solar cell based on action of a strong electron withdrawing group substituted fluoropyridine additive and a preparation method thereof. The perovskite solar cell comprises a conductive electrode FTO, a first hole transport layer, a second hole transport layer, a perovskite active layer, a passivation layer, an electron transport layer, an interface modification layer and a metal electrode layer. Wherein the perovskite active layer comprises a fluoropyridine additive substituted by a strong electron withdrawing group. According to the invention, a strong electron withdrawing group is introduced to a key site of fluoropyridine, so that the coordination with Pb < 2 + > ions in perovskite is enhanced, uncoordinated metal defects on the surface are precisely passivated, and the formation of a deep energy level trap state is inhibited. Besides, the additive has an obvious regulation and control effect on the perovskite film forming process, can promote the formation of a large-grain dense film layer, improves the stability and repeatability of a device, and finally obtains a high-performance and high-stability perovskite solar cell.

The utility model discloses an N-type crystalline silicon TOPCon cell, which comprises a silicon substrate, a front metal electrode, a back metal electrode, a front selective emitter and a front anti-reflection passivation layer which are sequentially arranged along the front direction of the silicon substrate, and a TOPCon passivation contact structure, a back selective emitter and a back anti-reflection passivation layer which are sequentially arranged along the back direction of the silicon substrate. The double advantages of the selective emitter and the TOPCon cell are utilized, the front face of the silicon substrate is provided with the selective emitter structure, the back face of the silicon substrate is provided with the TOPCon passivation contact structure and the selective emitter structure, the TOPCon passivation contact structure and the double selective emitter structures are combined, and the selective emitter structure and the TOPCon passivation contact structure are combined. Metal contact resistance of the front and back surfaces and recombination loss of photon-generated carriers on the front and back surfaces of the cell can be obviously reduced, open-circuit voltage and filling factors are improved, and the conversion efficiency of the cell is effectively improved.

The present application relates to a kind of lithium metal electrode and its manufacturing method, the lithium metal electrode of the present application includes: current collector;Metal layer, at least one surface of the current collector and including lithium alloy;Protective layer, on the metal layer;And film layer, on the surface of the protective layer, at least part includes LiF;When being measured by X-ray photoelectron spectroscopy (X-Ray Photoelectron Spectroscopy, XPS), the peak intensity that appears at 684~686eV is greater than the peak intensity that appears at 687~689eV.