1268 results about "Metallic electrode" patented technology

The invention relates to the field of pressure sensors, in particular to a pressure sensor and a processing method, and a chip comprises a silicon substrate, a silicon dioxide dielectric layer, a device layer, a metal electrode and packaging glass. The device layer comprises a silicon carbide single crystal device layer and a silicon device layer; the silicon carbide single crystal device layer is arranged on the silicon device layer; the silicon device layer, the silicon dioxide dielectric layer and the silicon substrate are connected in sequence; the device layer is etched to form a sensitive resistor device layer, an annular sealing region and a micro-channel; the sensitive resistance device layer is isolated from the annular sealing area through the micro-channel; the device layer, the silicon dioxide dielectric layer and the silicon substrate are etched to form a cross beam etching area; the silicon substrate is etched to form a silicon pressure cavity and a beam film; the metal electrode is arranged on the top of the device layer; and the packaging glass anode is bonded at the top of the device layer or the bottom of the silicon substrate so as to solve the problems of low high temperature resistance and low sensitivity of the MEMS pressure sensor.

The invention discloses a combined passivation back contact battery which comprises an N-type silicon wafer, a second intrinsic amorphous silicon layer, a microcrystalline silicon layer, an anti-reflection layer, a second semiconductor opening region, a first semiconductor opening region and a transition region, the anti-reflection layer is a single-layer amorphous silicon carbonitride layer or a laminated structure composed of an amorphous silicon carbide layer and an amorphous silicon carbonitride layer, and the second semiconductor opening area is composed of a first intrinsic amorphous silicon layer, a P-type amorphous silicon layer, a transparent conductive film and a metal electrode which are sequentially arranged on the back face of the silicon wafer. The first semiconductor opening area is composed of a tunneling oxide layer, an N-type polycrystalline silicon layer, a transparent conductive film and a metal electrode which are sequentially arranged on the back face of the silicon wafer, and an opening is etched in the transparent conductive film on the surface of the transition area to form an insulation groove. Amorphous silicon carbonitride or amorphous silicon carbide / amorphous silicon carbonitride laminated layers are adopted as the anti-reflection layers, so that reflection loss is reduced, the reliability and durability of the cell are improved, and the conversion efficiency of the cell is improved.

The invention discloses an RFID-based cable joint temperature real-time monitoring method and system, and relates to the technical field of power equipment state monitoring, and the method comprises the steps: embedding an annular metal electrode in a cable joint insulating layer, and integrating an RFID temperature sensor and the annular metal electrode to form a composite sensing unit; collecting a temperature sensing signal and a partial discharge signal through a time synchronization mechanism, and establishing an evaluation model reflecting a dynamic association relationship between a temperature parameter and a discharge characteristic parameter; and judging an insulation degradation trend based on an output value of the evaluation model, and generating an insulation early warning signal when the correlation parameter is detected to exceed a preset correlation threshold value. The technical problem that single temperature monitoring cannot comprehensively reflect the insulation state of the cable joint is solved, comprehensive evaluation of the insulation state of the cable joint is realized through correlation analysis of temperature monitoring and partial discharge detection, and the accuracy of fault early warning is improved.

The invention relates to the technical field of back contact solar cells, in particular to a back contact solar cell with a double-passivation structure and a preparation method thereof, and the front surface of the cell sequentially comprises an antireflection film, a suede structure and an N-type monocrystalline silicon wafer from outside to inside; a back field region on the back surface of the back contact solar cell sequentially comprises a metal electrode, an antireflection film, a second phosphorus-doped polycrystalline silicon layer, a second tunneling oxide layer, a first phosphorus-doped polycrystalline silicon layer, a first tunneling oxide layer and an N-type monocrystalline silicon wafer from outside to inside; the emitter region sequentially comprises a metal electrode, an antireflection film, a transparent conductive film, a boron-doped amorphous silicon layer, an intrinsic amorphous silicon layer and an N-type monocrystalline silicon wafer from outside to inside; the isolation area sequentially comprises an antireflection film, a suede structure and an N-type monocrystalline silicon wafer from outside to inside. A P-type TOPCon structure of an emitter region of the TBC battery is optimized into an intrinsic amorphous silicon + P-type amorphous silicon passivation structure with better passivation performance and contact performance, and the conversion efficiency is improved.

The invention discloses a wearable medical monitoring equipment electrode which is composed of a layered structure and comprises a transparent flexible substrate layer which is made of a biocompatible flexible polymer material and is used for providing flexible support and isolating a metal electrode from the skin; the metal grid copper transparent electrode layer is formed on the surface of the transparent flexible substrate layer through a yellow light etching micro-nano processing technology; the conductive gel layer uniformly covers the surface of the metal grid copper electrode layer; the encapsulation layer is formed by spin-coating a polymethyl methacrylate solution on the surface of the conductive gel layer and forming a transparent protection layer after curing; the gradient line width bionic honeycomb-shaped copper grid design is adopted, the light transmittance is kept, meanwhile, the collection efficiency of physiological electric signals is remarkably improved, signal transmission loss is reduced, through the polyacrylamide and nanocellulose composite gel formula and micro-channel dynamic humidity adjustment, signal stability under long-term wearing is ensured, and the application range is wide. The problem of signal distortion caused by dryness of traditional gel is solved.

The invention provides a method for improving the efficiency of a perovskite solar cell, and relates to the technical field of solar cells, the cell structure sequentially comprises a bottom substrate, a transparent electrode, a hole transport layer, a perovskite light absorption layer, an interface modification layer, an electron transport layer, a buffer layer and a metal electrode from bottom to top; a new additive 4-(2-aminoethyl) benzenesulfonic acid hydrochloride is introduced into the perovskite light absorption layer, the additive is introduced into the perovskite light absorption layer by being dissolved in a perovskite precursor solution, and the dosage of the additive is 0.1-1.5 mg / mL. Based on the method, the defect density of shallow energy level and deep energy level of perovskite is reduced, a more intrinsic perovskite absorption layer is formed through induction, balance extraction of electrons and holes is promoted, and then the open-circuit voltage and efficiency of the solar cell are remarkably improved.

The invention provides a heterojunction memristor based on a two-dimensional material CrPS4 and a preparation method of the heterojunction memristor, and relates to the field of microelectronic semiconductor material photoelectric memristors. The heterojunction memristor comprises a substrate, a two-dimensional material CrPS4-based heterojunction and an active metal electrode which are stacked in sequence. According to the vertical heterojunction memristor disclosed by the invention, the prepared novel two-dimensional material CrPS4 is adopted as a resistive function layer material, and the vertical heterojunction memristor shows excellent non-volatile resistive property.

The TBC solar cell slice comprises a silicon substrate, and first areas and second areas are alternately arranged on the back face of the silicon substrate; the first region comprises a first tunneling oxide layer, a first conductive passivation layer, a first back passivation layer and a first metal electrode, and the first metal electrode is in ohmic contact with the first conductive passivation layer; the second region sequentially comprises a second tunneling oxide layer, a second conductive passivation layer, a second back passivation layer and a second metal electrode, and the second metal electrode is in ohmic contact with the second conductive passivation layer; the first conductive passivation layer and the second conductive passivation layer have opposite conductive media; the isolation region between the first region and the second region is recessed inwards; at least one end of the TBC solar cell slice along the first direction is an isolation area. According to the invention, the slicing position is in the isolation region, the damage to the first conductive passivation layer or the second conductive passivation layer caused by cutting the first region and the second region during slicing is avoided, the cutting damage is reduced, and the battery performance is improved.

The invention discloses a chip structure capable of simultaneously improving deep ultraviolet LED crystal quality and injection efficiency and a preparation method. The chip structure comprises a substrate, a buffer layer is arranged on the substrate, a multi-quantum well layer is arranged above the buffer layer, an n-type doping layer is arranged on the side face of the multi-quantum well layer, and an n-type contact electrode is arranged above the n-type doping layer. A plurality of p-type doped layer plugs are inserted in the multi-quantum well layer, a p-type doped layer is arranged above the p-type doped layer plugs and the multi-quantum well layer, and a p-type contact electrode is arranged on the p-type doped layer; a passivation layer is arranged on the upper surface of the whole structure, and the thickened metal electrode penetrates through the passivation layer and is located on the n-type contact electrode and the p-type contact electrode. According to the invention, insufficient hole injection in the multi-quantum well layer and the crystal quality of the multi-quantum well layer can be improved at the same time.

The invention discloses a solar cell, a photovoltaic module and a preparation method. The solar cell may include: a silicon substrate; the electric functional areas are arranged on the first main surface of the silicon substrate at intervals, and each electric functional area comprises an emitting electrode and a first passivation structure which are stacked from inside to outside; the isolation regions are arranged between the adjacent electric functional regions and comprise second passivation structures; the first metal electrode penetrates through the first passivation structure and is electrically connected with the emitting electrode; for the first main surface of the silicon substrate, the specific surface area corresponding to the isolation region is smaller than the specific surface area corresponding to the electrical functional region. According to the solar cell cutting process, the doped region can be prevented from being damaged, and carrier recombination of a cell piece is reduced.

The utility model discloses a copper-containing metal electrode solar cell and a solar cell module, and belongs to the technical field of solar cells, the copper-containing metal electrode solar cell comprises a silicon wafer, a first semiconductor layer, a second semiconductor layer, a conductive film layer, a copper-containing metal fine gate electrode and protective ink; a second semiconductor opening region is formed between the adjacent first semiconductor layers; an isolation groove is formed in the conductive film layer corresponding to the edge area of the second semiconductor opening area; the conductive film layer corresponding to each first semiconductor layer and each second semiconductor layer is provided with a copper-containing metal fine gate electrode; and the protective ink covers the copper-containing metal fine gate electrode, and / or the protective ink covers the isolation groove. According to the utility model, the long-term reliability of the module is improved, the technical requirements on packaging materials are reduced, the product cost is effectively reduced, and the application scene of packaging the copper-containing metal electrode solar cell into the module is expanded.

According to the perovskite solar cell and the preparation method thereof, the hole transport layer, the perovskite layer, the electron transport layer and the metal electrode are sequentially prepared on the ITO substrate, PDADI is added in the hole transport layer and the mixed SAM solution, the uniform coverage rate of the SAM on the ITO substrate is increased, the interface energy level is optimized, hole extraction is promoted, and the hole transport layer and the perovskite layer are integrated. The non-radiative recombination of an interface is reduced, the surface wettability of the hole transport layer is improved, a film with higher quality and a film with low defect density are formed, and the efficiency and the stability of a perovskite solar cell device are improved. For a perovskite solar cell, PDADI is added into an SAM solution to be mixed to serve as a hole transport layer to prepare an inverted perovskite device, PDADI is added into the mixed SAM solution, the uniform coverage rate of SAM on an ITO substrate is increased, the interface energy level is optimized, hole extraction is promoted, and non-radiative recombination of an interface is reduced.

The invention relates to the technical field of preparation of organic solar cells, in particular to an organic solar cell based on a halogenated additive, and the structure level of a forward device of the solar cell sequentially comprises a transparent conductive substrate, a hole transport layer, an organic active layer, an electron transport layer and a metal electrode from bottom to top, the organic active layer comprises a polymer donor PM6, a non-fullerene electron acceptor L8-BO and a halogenated additive DFBB. Through addition of a halogenated additive DFBB, strong non-covalent bonding is formed by unique sigma-hole interaction of the halogenated additive DFBB and a receptor L8-BO, and meanwhile, the molecular stacking orientation of the active layer can be accurately regulated and controlled by the polymer electrostatic potential extreme value of the halogenated additive DFBB. The halogenated additive DFBB preferentially generates strong sigma-hole interaction with acceptor molecules, ordered accumulation of L8-BO is remarkably enhanced, meanwhile, the crystallization behavior of the donor PM6 is balanced through the synergistic halogen effect, a bicontinuous interpenetrating network structure is formed, and the photo-generated exciton yield is improved.

A P-type TBC solar cell and a manufacturing method therefor. The P-type TBC solar cell comprises P-type substrate silicon, wherein the backside of the P-type substrate silicon comprises a patterned N-type region; in the N-type region, a first tunneling layer, an N-type polysilicon layer, a first conductive shielding layer, a first passivation anti-reflection layer and a non-silver N fine finger are sequentially disposed outwards from the backside of the P-type substrate silicon; and the non-silver N fine finger penetrates the first passivation anti-reflection layer to come into contact with the first conductive shielding layer. In the present invention, a non-silver N fine finger is used as a metal electrode in an N-type region of the back face of a cell, such that the production costs of a P-type TBC solar cell can be greatly reduced; moreover, by means of providing a conductive shielding layer between the non-silver N fine finger and a corresponding polysilicon, metal slurry is prevented from coming into direct contact with the polysilicon during sintering of the non-silver N fine finger, such that the contact resistance is greatly reduced, fill factors of the cell are increased, an open-circuit voltage of the cell is increased and the photoelectric conversion efficiency of the cell is improved.

The invention belongs to the technical field of photovoltaic cells, and particularly discloses a laminated solar cell and a preparation method thereof, a photovoltaic module, a power generation device and a power utilization device.The laminated solar cell comprises a bottom cell, a perovskite cell and a barrier layer, and the bottom cell and the perovskite cell are arranged in a laminated mode; one side, far away from the bottom cell, of the perovskite cell comprises a transparent conductive layer and a metal electrode which are stacked in the direction far away from the bottom cell; and the barrier layer is arranged on the surface, not covered by the metal electrode, of the transparent conductive layer. Therefore, the laminated solar cell has water-oxygen stability, erosion to perovskite can be reduced, the process is simple, and industrial production is easy to realize.

The invention belongs to the technical field of micro-nano machining, and relates to a preparation method of a metal nano slot array, which comprises the following steps: preparing a metal electrode on a substrate and patterning to obtain a first electrode; depositing a sacrificial structure at the joint of the first electrode and the substrate and patterning to obtain a sacrificial layer; preparing another metal electrode on the substrate and patterning to obtain a second electrode, and enabling the second electrode to cover the sacrificial layer; removing an electrode overlapping top cap at the junction of the first electrode and the second electrode by adopting a chemical mechanical polishing method to enable the sacrificial layer to be in an exposed state; and processing the sacrificial layer by adopting a wet etching method, so that a nano gap is formed between the first electrode and the second electrode, and the metal nano gap array is obtained. The metal nano gap array can be prepared, the heterogeneous electrode can be prepared, the depth-to-width ratio is high, the cost is low, and large-area batch preparation can be achieved.

The invention is applicable to the technical field of ceramic high-temperature sensors, and provides a high-temperature co-sintered multilayer special-shaped ceramic high-temperature sensor and a preparation method thereof.The ceramic high-temperature sensor sequentially comprises a protective layer, a functional layer, an insulating layer and a supporting layer, and metal electrode networks are printed on the functional layer and the supporting layer; according to the high-temperature co-sintered multilayer special-shaped ceramic high-temperature sensor, zirconium oxide and aluminum oxide are used as matrixes, lanthanum oxide and yttrium oxide are added, the microstructure and performance of ceramic are optimized, the ceramic has higher high-temperature resistance, mechanical strength and stability, the nano Al2O3 is doped with platinum-iridium alloy ink, and the high-temperature co-sintered multilayer special-shaped ceramic high-temperature sensor has the advantages that the high-temperature co-sintered multilayer special-shaped ceramic high-temperature sensor is more stable in performance. The problem of interface failure of metal and ceramic at high temperature is solved, the electrode made of high-temperature-resistant metal ink is printed on the ceramic layer through the 3D printing technology, good binding force and conductivity exist between the electrode and the ceramic layer, and the electrode can stably work in the high-temperature environment.

The invention discloses a vortex beam orbital angular momentum detector based on surface plasmon and a detection method, and belongs to the field of micro-nano photonics and photoelectric detection. The detector is based on a plane photoelectric detector of a metal-semiconductor-metal type, a vortex light field beam splitting structure is arranged on a metal electrode on one side of the detector or between two metal electrodes, the vortex light field beam splitting structure comprises an incident coupling grating, an incident light field carrying different orbital angular momentums can be split into plasmons in different directions, and the plasmons in different directions can be split into a vortex light field. The single detector resolution of the orbital angular momentum of the vortex beam is realized through the direction and propagation loss difference of plasmons. The detector is compatible with an existing semiconductor technology, the structure is simple, vortex light beams carrying high-order orbital angular momentum can be detected, and the rotation direction of a vortex light field can be detected.

The invention relates to the technical field of solar cells, and particularly discloses a method for improving conductive contact of a micro-area of an N-type cell, which comprises the following steps of: (1) performing first micro-area conductive treatment on one side of a cell grid line of the N-type cell: scanning a first side edge of the cell grid line through a first pulse laser beam, and applying a first reverse bias voltage to the cell at the same time; and (2) performing second micro-area conductive treatment on the other side of the cell grid line of the N-type cell: scanning a second side edge, opposite to the first side edge, of the cell grid line through a second pulse laser beam, and applying second reverse bias voltage to the cell at the same time. According to the method, the pulse laser beams with more concentrated energy are used for carrying out single-side scanning on the two side edges of the grid line of the battery piece respectively, and precise treatment on the metal electrode on the basis of not damaging the passivation layer of the battery can be realized, so that the contact performance of the battery is optimized, the contact resistance of the battery is greatly reduced, and the performance of the battery piece is improved.

The invention provides an electro-optical modulator and a modulation method thereof, the electro-optical modulator comprises a substrate, a buried oxide layer and a lithium niobate waveguide layer are sequentially stacked on the substrate, and the lithium niobate waveguide layer comprises a first optical waveguide and a second optical waveguide; the electrode layer comprises a composite traveling wave electrode and a direct-current electrode, and the direct-current electrode is arranged on one side, in the signal transmission direction, of the composite traveling wave electrode; wherein the composite traveling wave electrode comprises a metal electrode and a polymer electrode, the metal electrode is embedded into the buried oxide layer, the polymer electrode is arranged on the surface of the buried oxide layer, and the composite traveling wave electrode is arranged between the first optical waveguide and the second optical waveguide and arranged on the side faces of the first optical waveguide and the second optical waveguide respectively; wherein the direct current electrode is arranged between the first optical waveguide and the second optical waveguide. The electro-optical modulator is high in electro-optical conversion efficiency, the plasma effect caused by light field coupling is effectively avoided, and the light loss of the device is remarkably reduced.

Lithium metal electrodes, modular lithium deposition systems, and associated articles and methods are generally described.

Disclosed in the present application are a novel passivated selective contact structure, a solar cell, a solar cell assembly, and a solar cell system. The novel passivated selective contact structure comprises a silicon substrate, wherein the surface of the silicon substrate comprises a front side of the silicon substrate and / or a back side of the silicon substrate, and the surface of the silicon substrate comprises a passivated selective contact region and a non-passivated selective contact region; the non-passivated selective contact region comprises a passivation anti-reflection layer disposed on the surface of the silicon substrate; and the passivated selective contact region comprises a passivation layer, a selective transport layer and a metal electrode, which are sequentially stacked from inside to outside, the passivation layer covers a partial region of the surface of the silicon substrate, and the projection of the selective transport layer on the surface of the silicon substrate covers a partial region of the surface of the silicon substrate. By means of a synergistic effect among the passivation anti-reflection layer, the selective transport layer and the passivation layer in the present application, an excellent passivated contact effect is achieved.

The invention discloses a perovskite solar cell based on a cross-linked interface passivation layer, and relates to the technical field of photovoltaic cell materials. The perovskite solar cell sequentially comprises a transparent conductive substrate, an electron transport layer, a perovskite light absorption layer, a crosslinking interface passivation layer, a hole transport layer and a metal electrode from bottom to top, and the cross-linked interface passivation layer is made of a 4-[10-(4-{(1, 2, 2-trifluorovinyl) oxy} phenyl)-10H-phenoxazine-2-yl] phenylphosphonic acid material. The cross-linked interface passivation layer can significantly improve the photovoltaic performance and stability, the intrinsic stability of the device is greatly enhanced by the cross-linked network, and in a double-85 aging test of 85 DEG C / 85% RH, the time required for attenuating the efficiency of the device to 80% of an initial value can exceed 1000 hours.

The invention discloses a TOPCon battery and a preparation method thereof, and a photovoltaic module, and the TOPCon battery comprises an N-type silicon substrate which is provided with a light receiving surface and a backlight surface, which are opposite to each other; the light receiving surface comprises a first area and a second area; a P-type emitter layer, a first passivation layer and a first antireflection layer are sequentially arranged on the first region in the direction away from the N-type silicon substrate; the first region is also provided with a first metal electrode, and the first metal electrode passes through the first antireflection layer and the first passivation layer and is in contact with the P-type emitter layer; and a second passivation layer and a second antireflection layer are sequentially arranged on the second region along the direction far away from the N-type silicon substrate. The P-type emitter layer is selectively arranged on the light receiving surface of the N-type silicon substrate, so that the conversion efficiency of the cell is remarkably improved.

A lithium secondary battery includes a positive electrode including a positive electrode active material layer and a negative electrode including a negative electrode active material layer, wherein the negative electrode active material layer includes a negative electrode active material, and the negative electrode active material consists of silicon. In a graph of capacity-voltage measured by manufacturing a half-cell including the positive electrode and a lithium metal electrode and then discharging the half-cell at a constant current of 0.1 C, an inflection point appears in a region in which a voltage is 3.3 V to 3.7 V. The capacity of the positive electrode at the inflection point is from 3% to 25% of the capacity of the positive electrode at a final charge voltage.

The present invention provides an organic electric element including a metal patterning layer formed on the outside of a metal electrode and an electronic device thereof, and by forming a patterning auxiliary photosensitive layer made of a material with excellent photosensitivity under the metal patterning layer, it is possible to easily measure the thickness of the metal patterning layer.

The invention discloses an effectiveness exploration method for inhibiting AM by exciting LIPUS through a flexible ultrasonic patch, and belongs to the field of medical equipment and biomedical engineering. The patch comprises a flexible substrate, an island bridge type metal electrode, an adjustable array type piezoelectric ceramic unit and a flexible packaging layer, can be precisely attached to a focus area, outputs low-intensity pulse ultrasound with the frequency of 1-3 MHz and the sound intensity of 30-120 mW / cm < 2 >, and can inhibit expression of proinflammatory factors, up-regulate E-cadherin, induce apoptosis of ectopic endometrial cells and inhibit activity of pain ion channels, so that the pain of a patient is relieved, and the pain of the patient is relieved. In-vivo and in-vitro experiments show that the patch does not have significant uterus and ovarian toxicity, can reduce the fibrosis area by 40% or more, can increase the apoptosis rate to 45%, supports a continuous or pulse type adjustable treatment mode, integrates a flexible electronic technology and ultrasonic medicine, and has a wide application prospect. A noninvasive, accurate and wearable innovative treatment scheme is provided for adenomyosis, and the clinical transformation value is remarkable.

The invention relates to a photovoltaic cell and a preparation method of the photovoltaic cell. The photovoltaic cell comprises: a substrate having a textured surface, the textured surface comprising a plurality of first pyramids and a plurality of second pyramids, the plurality of second pyramids being arranged between the plurality of first pyramids; the tower footing size of the second pyramid is larger than that of the first pyramid, and the tower height of the second pyramid is larger than that of the first pyramid. According to the invention, the scattering capability of broadband light can be enhanced, the problem that the traditional single-scale pyramid texture surface is insufficient in scattering of long-wave light is effectively improved, and the light capturing and absorbing effects of the photovoltaic cell are improved; the dual-scale pyramid suede can be better matched with the passivation contact layer, so that the surface recombination phenomenon is reduced, and the high open-circuit voltage of the photovoltaic cell can be maintained; the second pyramid can also provide an adaptive contact basis for the metal electrode, and the contact resistance between the electrode and the substrate is reduced. Therefore, the photoelectric conversion efficiency of the photovoltaic cell can be effectively improved.

The invention discloses a laser chip ohmic contact annealing optimization method and related equipment. The method comprises the steps that a metal electrode and a conductive mark layer are formed on the surface of a semiconductor through deposition; applying electrical excitation to the conductive mark layer and collecting electrical response in the annealing temperature rise stage to establish an initial response reference of the position of the conductive mark layer; in the annealing heat preservation stage, the electrical response change of the conductive mark layer is monitored, and the real-time response is compared with the initial response reference so as to judge the ohmic contact forming state of the position where the conductive mark layer is located; and adjusting annealing process parameters according to the judgment result of the ohmic contact forming state. According to the scheme, in-situ monitoring and self-adaptive adjustment of ohmic contact forming states at different positions in the annealing process can be achieved, and the uniformity and yield of ohmic contact of the laser chip are improved.

The invention relates to the field of solid electrolyte preparation, and particularly discloses a solid electrolyte preparation method, a solid electrolyte and a battery, and the solid electrolyte preparation method comprises the following steps: step 1, synthesis of a pyridyl covalent organic framework (PCOF): dissolving 1, 3, 5-triformyl benzene and 2, 6-diaminopyridine pyridyl amine monomers in a mixed solvent of m-trimethylbenzene and 1, 4-dioxane, and stirring to obtain a solid electrolyte solution; the preparation method comprises the following steps: adding an acetic acid catalyst under the protection of argon, reacting at 100-130 DEG C for 48-96 hours, and then carrying out centrifugal separation, cleaning, neutralization, secondary cleaning and drying to obtain PCOF powder; by introducing the flexible diethylene glycol (DEG) group with relatively high polarity, the interface contact between the DEG-PMCOF and the lithium metal electrode is tighter, the interface impedance is effectively reduced, the overall performance of the battery is improved, meanwhile, the overall toughness of the material is remarkably enhanced through the flexible characteristic of the DEG, the problems of crack generation and layering in the cycle process of the battery are reduced, and the service life of the battery is prolonged. The mechanical property and the long-term stability of the material are improved.