1883 results about "Metallic electrode" patented technology

The invention discloses a back contact solar cell, an assembly and a system. The back contact solar cell comprises a silicon substrate, the back surface of the silicon substrate comprises a plurality of first areas and a plurality of second areas, the first areas and the second areas are arranged at intervals, and each of the first areas and the second areas comprises a passivation selective contact area and a non-passivation selective contact area; the non-passivation selective contact area comprises a passivation anti-reflection layer arranged on the surface of the silicon substrate; the passivation selective contact area of the first area comprises a first passivation layer, a selective transmission layer and a first metal electrode which are sequentially stacked on the surface of the silicon substrate from inside to outside. According to the back contact solar cell, the passivation layer and the selective transmission layer are arranged in the first region and combined with the passivation anti-reflection layer, the excellent passivation contact effect is achieved, a narrow-band-gap highly-doped silicon material does not need to be used, the optical parasitic absorption loss is reduced, the photoelectric conversion efficiency is improved, and then the performance of the back contact solar cell is improved.

The invention relates to the field of pressure sensors, in particular to a pressure sensor and a processing method, and a chip comprises a silicon substrate, a silicon dioxide dielectric layer, a device layer, a metal electrode and packaging glass. The device layer comprises a silicon carbide single crystal device layer and a silicon device layer; the silicon carbide single crystal device layer is arranged on the silicon device layer; the silicon device layer, the silicon dioxide dielectric layer and the silicon substrate are connected in sequence; the device layer is etched to form a sensitive resistor device layer, an annular sealing region and a micro-channel; the sensitive resistance device layer is isolated from the annular sealing area through the micro-channel; the device layer, the silicon dioxide dielectric layer and the silicon substrate are etched to form a cross beam etching area; the silicon substrate is etched to form a silicon pressure cavity and a beam film; the metal electrode is arranged on the top of the device layer; and the packaging glass anode is bonded at the top of the device layer or the bottom of the silicon substrate so as to solve the problems of low high temperature resistance and low sensitivity of the MEMS pressure sensor.

Disclosed are a method for designing lightning shielding by using diverter strips on an aircraft, a system, a device, and a medium. The method comprises: determining boundary conditions of a simulation space; according to the boundary conditions of the simulation space, performing numerical calculation on an electric field in the simulation space; according to the calculation result of the electric field and in combination with fractal theory, determining a probability of the direction of lightning leader development, and, according to the probability of the direction of lightning leader development, randomly selecting a subsequent development position of a lightning downward-moving stepped leader; determining, on the basis of testing and simulation results of a corona discharge characteristic at the tip of a metal electrode having a small radius of curvature, whether an initial corona at an end portion of a diverter strip has been initiated, and determining whether an initial corona at an end portion of a diverter strip has been initiated; determining whether the lightning downward-moving stepped leader can, after attaching to an insulating plate, run through a gap along the surface and reach an adjacent diverter strip; repeating the process above, and performing multiple simulations to solve the probability of lightning protection of diverter strips and establish a relationship between the probability of lightning protection of diverter strips and the distance between the diverter strips at different thicknesses of and using different materials for the insulating plate.

The invention belongs to the technical field of solar power generation, and particularly relates to a back contact BC solar cell structure and a preparation method thereof. A tunneling SiO2 layer and a phosphorus-doped N + poly layer with high crystallization rate and low parasitic absorption are arranged in a back N region of the cell; the P region is sequentially provided with an i: a-Si layer, a P: a-Si sub-layer and a P-uc-SiOxCy sub-layer; the front surface of the cell is provided with a laminated gradient silicon nitride antireflection passivation film; the back N region adopts the SiO2 layer and the N + poly field structure with high crystallization rate and low parasitic absorption to replace an i: a-Si + N: a: Si field structure of a traditional HBC to improve the current density, and the back N region adopts the suede light trapping structure to replace a polishing structure to improve the current density. A low-temperature silicon nitride antireflection film is additionally arranged on the upper layer of the TCO transparent conductive film to improve passivation and current density, silicon nitride coverage antireflection is carried out on the isolation regions of the P region and the N region to improve passivation and current density, the back efficiency of the cell is improved, and the double-sided rate is improved.

The invention relates to the technical field of solar cells, and mainly provides a solar cell and a preparation method thereof. The preparation method of the solar cell comprises the following steps: providing a silicon substrate; sequentially forming a first transparent conductive oxide layer, a first sacrificial layer and a first metal seed layer on the first surface of the silicon substrate; forming a patterned first mask layer on the first metal seed layer to expose the first metal seed layer in the first metal region; depositing a metal material on the first metal seed layer in the first metal region by adopting an electroplating process to form a first metal electrode; completely removing the first mask layer and the first metal seed layer in the first non-metal region; wherein the first transparent conductive oxide layer is an acid-resistant transparent conductive oxide layer; the first sacrificial layer is a non-acid-resistant transparent conductive oxide layer. The solar cell provided by the technical scheme of the invention has good electrical performance, stability and photoelectric conversion rate.

The invention relates to the technical field of solar cells, in particular to a back contact solar cell, a preparation method thereof and a cell assembly, a mixed metal electrode structure is adopted, a fine gate electrode in an overlapping area of a main gate electrode and the fine gate electrode is removed, and a metal composite layer below the fine gate electrode is used for replacing a traditional fine gate electrode, so that the back contact solar cell is obtained. A cross structure in space between the fine gate electrode and the main gate electrode is avoided, poor short circuit caused by insufficient effective insulation thickness is reduced, improvement of the yield of the battery is facilitated, meanwhile, the discontinuous length of the fine gate electrode and the width of the main gate electrode are limited, a more abundant error range is provided for welding of a welding strip, and the welding quality of the battery is improved. By limiting the ratio of the thickness of the composite conductive layer to the width of the composite conductive layer in the first direction, the linear resistivity of the composite conductive layer is guaranteed, and extra power loss caused by too high resistivity is avoided; a fine gate electrode is replaced by the flat composite conductive layer, so that the thickness of the insulating layer is greatly reduced, and the material cost of the insulating layer is saved.

The invention discloses a back surface structure of a TBC battery, a preparation method of the back surface structure, the TBC battery and a preparation method of the TBC battery, and belongs to the technical field of solar batteries. According to the back surface structure of the TBC battery, the first doped polycrystalline silicon layer is provided with the high-concentration doped region and the low-concentration doped region, so that on one hand, good contact between a metal electrode and polycrystalline silicon is ensured, and meanwhile, the battery has relatively low contact resistance and high conversion efficiency. According to the back surface structure of the TBC battery or the preparation method of the TBC battery provided by the invention, on the basis of ensuring that the thickness of the first doped polycrystalline silicon layer is not reduced, by arranging the low-concentration doped region, the adverse effect of laser patterning processing on subsequent wet etching of polycrystalline silicon is reduced, the wet etching effect of the polycrystalline silicon is ensured, and the production efficiency of the TBC battery is improved. Therefore, on the basis of ensuring the battery performance, the difficulty of the preparation process is reduced, and the battery manufacturing yield is improved.

The invention belongs to the related technical field of all-solid-state lithium metal batteries, and relates to a prediction method and system for cavity evolution in an all-solid-state lithium metal battery, and the method comprises the following steps: carrying out grid division on a lithium metal electrode, enabling grid nodes to be lithium atoms or vacancies, applying a stacking pressure from bottom to top at the bottom of the lithium metal electrode, meanwhile, the working temperature and the stacking pressure of the computational domain are changed, so that the size of the cavity is adjusted; constructing a phase-field sequence parameter equation, a concentration equation, an electrochemical equation and a mechanical equation for describing cavity evolution; and establishing an optimization model with the minimum cavity area as a target, solving the optimization model, and obtaining a relationship between the stacking pressure and the working temperature and the cavity area, so as to realize prediction of cavity evolution. According to the invention, quantification of cavity evolution in the all-solid-state lithium metal battery under different stacking pressures and different working temperatures is realized.

The invention discloses a combined passivation back contact battery which comprises an N-type silicon wafer, a second intrinsic amorphous silicon layer, a microcrystalline silicon layer, an anti-reflection layer, a second semiconductor opening region, a first semiconductor opening region and a transition region, the anti-reflection layer is a single-layer amorphous silicon carbonitride layer or a laminated structure composed of an amorphous silicon carbide layer and an amorphous silicon carbonitride layer, and the second semiconductor opening area is composed of a first intrinsic amorphous silicon layer, a P-type amorphous silicon layer, a transparent conductive film and a metal electrode which are sequentially arranged on the back face of the silicon wafer. The first semiconductor opening area is composed of a tunneling oxide layer, an N-type polycrystalline silicon layer, a transparent conductive film and a metal electrode which are sequentially arranged on the back face of the silicon wafer, and an opening is etched in the transparent conductive film on the surface of the transition area to form an insulation groove. Amorphous silicon carbonitride or amorphous silicon carbide / amorphous silicon carbonitride laminated layers are adopted as the anti-reflection layers, so that reflection loss is reduced, the reliability and durability of the cell are improved, and the conversion efficiency of the cell is improved.

Methods are proposed for manufacturing dendrite-resistant lithium metal electrodes suitable for incorporation into lithium metal batteries. In an embodiment, the method involves first electroplating a copper sheet onto a surface of a single crystal of silicon, the silicon being doped to form a p-type or an n-type semiconductor, and then further electroplating the copper sheet with lithium metal. The lithium-electroplated copper sheet thus manufactured provides a lithium electrode that is resistant to dendrite formation during cycling of lithium metal batteries when compared to conventionally manufactured lithium electrodes. Methods are further provided of manufacturing lithium sheets by directly electroplating lithium metal onto single crystals of doped silicon, the lithium sheets configured for incorporation into lithium metal electrodes that are resistant to dendrite formation during cycling of lithium metal batteries.

The invention discloses an RFID-based cable joint temperature real-time monitoring method and system, and relates to the technical field of power equipment state monitoring, and the method comprises the steps: embedding an annular metal electrode in a cable joint insulating layer, and integrating an RFID temperature sensor and the annular metal electrode to form a composite sensing unit; collecting a temperature sensing signal and a partial discharge signal through a time synchronization mechanism, and establishing an evaluation model reflecting a dynamic association relationship between a temperature parameter and a discharge characteristic parameter; and judging an insulation degradation trend based on an output value of the evaluation model, and generating an insulation early warning signal when the correlation parameter is detected to exceed a preset correlation threshold value. The technical problem that single temperature monitoring cannot comprehensively reflect the insulation state of the cable joint is solved, comprehensive evaluation of the insulation state of the cable joint is realized through correlation analysis of temperature monitoring and partial discharge detection, and the accuracy of fault early warning is improved.

The invention discloses a silicon carbide step groove MOSFET and a manufacturing method thereof. The MOSFET comprises a semiconductor drain region, a semiconductor drift region, a second conductive type semiconductor well region, a first conductive type semiconductor source region, a second conductive type semiconductor contact region, a first groove, a first conductive type carrier diffusion layer, a second groove, a second conductive type semiconductor shielding region, a gate dielectric layer, a gate electrode, an interlayer dielectric layer and a contact hole. And a source end metal electrode and a drain end metal electrode. A first conductive type semiconductor carrier diffusion layer (CSL) is prepared in a local region of the bottom and the side wall of a first groove, so that the specific on-resistance (Ron, sp) of the device is reduced; second conductive type semiconductor shielding regions short-circuited with the source end metal electrode are prepared in all regions of the bottom and the side wall of the second groove, so that the gate-oxide electric field can be remarkably reduced compared with a shielding region introduced only at the bottom of the groove, and the reliability of the device is improved.

The invention relates to the technical field of back contact solar cells, in particular to a back contact solar cell with a double-passivation structure and a preparation method thereof, and the front surface of the cell sequentially comprises an antireflection film, a suede structure and an N-type monocrystalline silicon wafer from outside to inside; a back field region on the back surface of the back contact solar cell sequentially comprises a metal electrode, an antireflection film, a second phosphorus-doped polycrystalline silicon layer, a second tunneling oxide layer, a first phosphorus-doped polycrystalline silicon layer, a first tunneling oxide layer and an N-type monocrystalline silicon wafer from outside to inside; the emitter region sequentially comprises a metal electrode, an antireflection film, a transparent conductive film, a boron-doped amorphous silicon layer, an intrinsic amorphous silicon layer and an N-type monocrystalline silicon wafer from outside to inside; the isolation area sequentially comprises an antireflection film, a suede structure and an N-type monocrystalline silicon wafer from outside to inside. A P-type TOPCon structure of an emitter region of the TBC battery is optimized into an intrinsic amorphous silicon + P-type amorphous silicon passivation structure with better passivation performance and contact performance, and the conversion efficiency is improved.

The invention discloses a wearable medical monitoring equipment electrode which is composed of a layered structure and comprises a transparent flexible substrate layer which is made of a biocompatible flexible polymer material and is used for providing flexible support and isolating a metal electrode from the skin; the metal grid copper transparent electrode layer is formed on the surface of the transparent flexible substrate layer through a yellow light etching micro-nano processing technology; the conductive gel layer uniformly covers the surface of the metal grid copper electrode layer; the encapsulation layer is formed by spin-coating a polymethyl methacrylate solution on the surface of the conductive gel layer and forming a transparent protection layer after curing; the gradient line width bionic honeycomb-shaped copper grid design is adopted, the light transmittance is kept, meanwhile, the collection efficiency of physiological electric signals is remarkably improved, signal transmission loss is reduced, through the polyacrylamide and nanocellulose composite gel formula and micro-channel dynamic humidity adjustment, signal stability under long-term wearing is ensured, and the application range is wide. The problem of signal distortion caused by dryness of traditional gel is solved.

The invention relates to the technical field of molecular optoelectronic devices, and particularly discloses a chiral molecule, a chiral molecule device, a preparation method and circularly polarized light detection application. Wherein the chiral molecule is a functional molecule which contains a chiral center and has a D-A-D structure type, and the chiral molecule device comprises a silicon substrate, an aluminum oxide dielectric layer, a metal electrode, a graphene point electrode and an RE-PDI molecule and is applied to circular polarized light detection. The invention designs and synthesizes a functional molecule RE-PDI which contains a chiral center and has a D-A-D structure type, and the functional molecule RE-PDI is assembled between graphene point electrodes with nano gaps through a chemical decoupling method. By using the distinguishing response of RE-PDI molecules to different types of circularly polarized light, distinguishing detection and dynamic periodic adjustable response to left-handed and right-handed circularly polarized light can be stably realized.

The invention relates to a deep ultraviolet light-emitting diode with a light scattering structure and a preparation method of the deep ultraviolet light-emitting diode. The light-emitting diode comprises a substrate layer, a buffer layer and an N-type semiconductor transmission layer which are sequentially arranged along the epitaxial growth direction of a chip, wherein the shape of the N-type semiconductor transmission layer is divided into an upper part and a lower part, and the multi-quantum well active layer, the P-type semiconductor transmission layer and the P-GaN contact layer sequentially cover the surface of the upper part of the N-type semiconductor transmission layer; a horizontal light scattering structure layer and a vertical light scattering structure are respectively distributed in the upper part and the lower part of the N-type semiconductor transmission layer. According to the invention, the scattering effect of light in the N-type semiconductor transmission layer is improved, the optical waveguide effect of the N-type semiconductor transmission layer is broken, the light is effectively prevented from spreading to the metal n electrode, meanwhile, the light can be scattered, the bottom light emitting efficiency of the deep ultraviolet LED is improved, and the light extraction efficiency is improved.

The invention provides a method for improving the efficiency of a perovskite solar cell, and relates to the technical field of solar cells, the cell structure sequentially comprises a bottom substrate, a transparent electrode, a hole transport layer, a perovskite light absorption layer, an interface modification layer, an electron transport layer, a buffer layer and a metal electrode from bottom to top; a new additive 4-(2-aminoethyl) benzenesulfonic acid hydrochloride is introduced into the perovskite light absorption layer, the additive is introduced into the perovskite light absorption layer by being dissolved in a perovskite precursor solution, and the dosage of the additive is 0.1-1.5 mg / mL. Based on the method, the defect density of shallow energy level and deep energy level of perovskite is reduced, a more intrinsic perovskite absorption layer is formed through induction, balance extraction of electrons and holes is promoted, and then the open-circuit voltage and efficiency of the solar cell are remarkably improved.

The invention belongs to the technical field of electrode materials, and particularly relates to a flexible liquid metal electrode based on gallium-indium-tin alloy and a preparation method and application thereof.Liquid metal ink is prepared through an ultrasonic method, a screen printing technology is adopted, the liquid metal ink is coated on a flexible substrate, meanwhile, mechanical activation and nanoparticle strategies are introduced, and the flexible liquid metal electrode based on gallium-indium-tin alloy is prepared. The preparation method of the high-performance flexible liquid gold electrode with excellent conductivity and mechanical stability is developed. In the flexible liquid metal electrode based on the gallium-indium-tin alloy, due to the good conductivity and biocompatibility of gallium-based liquid metal, the flexible stretchable conductive electrode based on the gallium-indium-tin liquid metal becomes an ideal wearable flexible device circuit material, and the patterning ability of the gallium-indium-tin liquid metal is further improved. Patterning preparation of the circuit is carried out in a mode of silk-screen printing of the gallium-based liquid metal particles, and the patterned liquid metal circuit with excellent conductivity and flexibility is obtained through mechanical activation.

The present exemplary embodiments relate to a lithium metal electrode, a method of manufacturing the same, and a lithium secondary battery including the same. According to an exemplary embodiment, a lithium metal electrode including: a current collector and a metal layer which is disposed on at least one surface of the current collector and includes a lithium component, in which a protective layer including amorphous carbon and lithium-ion conduction promoting ceramic particles is formed on a surface of the metal layer, may be provided.

The invention provides a heterojunction memristor based on a two-dimensional material CrPS4 and a preparation method of the heterojunction memristor, and relates to the field of microelectronic semiconductor material photoelectric memristors. The heterojunction memristor comprises a substrate, a two-dimensional material CrPS4-based heterojunction and an active metal electrode which are stacked in sequence. According to the vertical heterojunction memristor disclosed by the invention, the prepared novel two-dimensional material CrPS4 is adopted as a resistive function layer material, and the vertical heterojunction memristor shows excellent non-volatile resistive property.

The invention discloses a laser multi-point focusing beam splitting auxiliary sintering method for a crystalline silicon battery piece. The method comprises the following steps: emitting a laser beam by adopting a continuous fiber laser; a light beam collimator is adopted to collimate and expand the laser beam; segmenting the collimated or low-emission laser beam into a plurality of laser beams in a lossless manner by using a lossless spectroscope; a plurality of laser beams sequentially pass through the high-speed scanning galvanometer and the field lens to form a multi-light-spot pattern, and the multi-light-spot pattern completes scanning processing on a fine grid on the front side of the crystalline silicon battery piece. The multi-spot pattern completes scanning processing on the fine grid on the front surface of the crystalline silicon cell piece, so that the laser processing scanning time on the front surface of the crystalline silicon cell piece can be shortened, and meanwhile, unbalanced carrier generation and collection are improved to reduce the contact resistance of a metal electrode. In addition, the whole surface of the cell does not need to be processed, the sintering time is shortened, and the laser-assisted sintering processing efficiency is improved.

The invention discloses a composite conductive powder material and a preparation method and application thereof, and relates to the technical field of solar cells. The composite conductive powder material provided by the invention comprises a powder core formed by a metal material; the coating layer is formed by an anti-permeation material, the coating layer at least partially coats the powder core, and the anti-permeation material is used for preventing metal of the powder core from diffusing to the outside of the coating layer and preventing other materials located outside the coating layer from diffusing to the powder core. The powder material can be used as a raw material for low-cost electrode preparation methods such as screen printing, laser transfer printing, printing or coating, and can solve the problem of cell efficiency degradation caused by chemical reaction between metal of a metal electrode and a material of a photoelectric conversion layer.

The invention relates to the technical field of electroluminescent photoelectric devices, in particular to a photoelectric device based on electro-circular polarization luminescence of a single chiral rare earth complex molecule and a preparation method of the photoelectric device. A spin Hall effect detection layer of the photoelectric device comprises a platinum film and a non-magnetic metal detection electrode; the non-magnetic metal detection electrode is arranged on the side edge of the platinum film in the length direction; the graphene point electrode is arranged on the side edge of the upper surface of the insulating layer in the width direction, the two ends of the molecular heterojunction are connected with the graphene point electrode through amido bonds to form a graphene point electrode-molecular heterojunction array, and the magnetic metal electrode is arranged on the outer side edge of the upper surface of the graphene point electrode in the width direction. According to the photoelectric device, the excellent photoelectric property of the rare earth complex is combined with the molecular electronics technology, the detection sensitivity of the photoelectric device on the single molecule level is improved, the preparation method is mild in reaction condition and easy to operate, and application and popularization of the photoelectric device are facilitated.

The present application provides a semi-transparent perovskite cell assembly, a photoelectric device, a four-terminal stacked cell assembly, a photovoltaic assembly, and a photovoltaic system. The semi-transparent perovskite cell assembly includes a glass substrate, a transparent conductive layer, a functional layer, and a top electrode stacked in sequence; the transparent conductive layer is divided into a plurality of sub-transparent conductive layers by a plurality of P1 grooves, the functional layer is divided into a plurality of sub-functional layers by a plurality of P2 grooves, and the top electrode is divided into a plurality of sub-top electrodes by a plurality of P3 grooves; the projections of the P1 grooves, the P2 grooves, and the P3 grooves in the thickness direction of the cell assembly do not overlap; a metal electrode is provided in the P2 groove, and a transparent electrode is provided between the metal electrode and at least one side wall in the P2 groove. In the embodiment of the present application, a metal electrode is provided in the P2 groove, and the adjacent sub-perovskite cells are connected in series by utilizing the good step coverage ability and ductility of the metal electrode, which can effectively reduce the series resistance in the P2 groove and improve the photovoltaic efficiency of the cell.

The invention provides a nickel-tungsten alloy electroplating solution, a preparation method thereof and a preparation method of a solar cell metal electrode, and particularly relates to the technical field of solar cell preparation. The nickel-tungsten alloy electroplating solution provided by the invention comprises nickel salt, tungstate, a complexing agent, a wetting agent and water. In the nickel-tungsten alloy electroplating solution provided by the invention, on the basis of nickel salt and tungstate, a uniform and compact nickel-tungsten alloy layer can be formed on the surface of a plated part, and the layer of alloy combines the electrical conductivity of nickel and the corrosion resistance and high hardness characteristics of tungsten, so that the comprehensive performance of the plated part is remarkably improved. And the complexing agent is added, so that the activity of nickel ions and tungsten ions and the electrodeposition process are effectively controlled, and the quality and the production efficiency of a plating layer are optimized. And the wetting agent is used, so that the wettability of the plating solution on the surface of a plating piece is improved, uniform deposition of an alloy layer is promoted, pores and defects are reduced, and the binding force and durability of a plating layer are enhanced.

The TBC solar cell slice comprises a silicon substrate, and first areas and second areas are alternately arranged on the back face of the silicon substrate; the first region comprises a first tunneling oxide layer, a first conductive passivation layer, a first back passivation layer and a first metal electrode, and the first metal electrode is in ohmic contact with the first conductive passivation layer; the second region sequentially comprises a second tunneling oxide layer, a second conductive passivation layer, a second back passivation layer and a second metal electrode, and the second metal electrode is in ohmic contact with the second conductive passivation layer; the first conductive passivation layer and the second conductive passivation layer have opposite conductive media; the isolation region between the first region and the second region is recessed inwards; at least one end of the TBC solar cell slice along the first direction is an isolation area. According to the invention, the slicing position is in the isolation region, the damage to the first conductive passivation layer or the second conductive passivation layer caused by cutting the first region and the second region during slicing is avoided, the cutting damage is reduced, and the battery performance is improved.

The invention discloses a chip structure capable of simultaneously improving deep ultraviolet LED crystal quality and injection efficiency and a preparation method. The chip structure comprises a substrate, a buffer layer is arranged on the substrate, a multi-quantum well layer is arranged above the buffer layer, an n-type doping layer is arranged on the side face of the multi-quantum well layer, and an n-type contact electrode is arranged above the n-type doping layer. A plurality of p-type doped layer plugs are inserted in the multi-quantum well layer, a p-type doped layer is arranged above the p-type doped layer plugs and the multi-quantum well layer, and a p-type contact electrode is arranged on the p-type doped layer; a passivation layer is arranged on the upper surface of the whole structure, and the thickened metal electrode penetrates through the passivation layer and is located on the n-type contact electrode and the p-type contact electrode. According to the invention, insufficient hole injection in the multi-quantum well layer and the crystal quality of the multi-quantum well layer can be improved at the same time.

The invention discloses a solar cell, a photovoltaic module and a preparation method. The solar cell may include: a silicon substrate; the electric functional areas are arranged on the first main surface of the silicon substrate at intervals, and each electric functional area comprises an emitting electrode and a first passivation structure which are stacked from inside to outside; the isolation regions are arranged between the adjacent electric functional regions and comprise second passivation structures; the first metal electrode penetrates through the first passivation structure and is electrically connected with the emitting electrode; for the first main surface of the silicon substrate, the specific surface area corresponding to the isolation region is smaller than the specific surface area corresponding to the electrical functional region. According to the solar cell cutting process, the doped region can be prevented from being damaged, and carrier recombination of a cell piece is reduced.

The invention discloses a terahertz wave band composite beam RF MEMS switch with low driving voltage, and belongs to the field of radio frequency front-end devices. The device is composed of a direct current port metal block, a direct current bias line, a microstrip line matching structure, a composite beam MEMS switch, a composite beam middle conduction structure, a metal electrode of a composite beam, a silicon nitride insulating layer, a quartz glass substrate, a coplanar waveguide metal ground and a metal ground. The composite beam MEMS switch is formed by combining a silicon dioxide material clamped beam and a metal beam adsorbed below the silicon dioxide material clamped beam, a direct current port is connected to the anchor point position of the metal beam and a metal electrode through a direct current bias line, and different direct current voltages can be input through the direct current port to control the lifting state of the composite beam and the pull-down state of the composite beam adsorbed to the electrode. The two switches respectively correspond to an off state and an on state of the switch. The composite beam MEMS switch works below 140GHz, so that low driving voltage, low insertion loss and high isolation are realized. The reaction time of microsecond magnitude is achieved, destructive deformation is not prone to occurring, the structure is simple, and manufacturing is easy.

The utility model discloses a copper-containing metal electrode solar cell and a solar cell module, and belongs to the technical field of solar cells, the copper-containing metal electrode solar cell comprises a silicon wafer, a first semiconductor layer, a second semiconductor layer, a conductive film layer, a copper-containing metal fine gate electrode and protective ink; a second semiconductor opening region is formed between the adjacent first semiconductor layers; an isolation groove is formed in the conductive film layer corresponding to the edge area of the second semiconductor opening area; the conductive film layer corresponding to each first semiconductor layer and each second semiconductor layer is provided with a copper-containing metal fine gate electrode; and the protective ink covers the copper-containing metal fine gate electrode, and / or the protective ink covers the isolation groove. According to the utility model, the long-term reliability of the module is improved, the technical requirements on packaging materials are reduced, the product cost is effectively reduced, and the application scene of packaging the copper-containing metal electrode solar cell into the module is expanded.