103 results about "Metallic electrode" patented technology

The present application relates to a kind of lithium metal electrode and its manufacturing method, the lithium metal electrode of the present application includes: current collector;Metal layer, at least one surface of the current collector and including lithium alloy;Protective layer, on the metal layer;And film layer, on the surface of the protective layer, at least part includes LiF;When being measured by X-ray photoelectron spectroscopy (X-Ray Photoelectron Spectroscopy, XPS), the peak intensity that appears at 684~686eV is greater than the peak intensity that appears at 687~689eV.

Disclosed is a semiconductor device including a metal gate electrode optimized for a peripheral region. The semiconductor device includes a substrate including a first NMOS region and a second NMOS region whose line width is different from a line width of the first NMOS region; a first conductive pattern including a stacked structure of a first gate dielectric layer and a first metal electrode over the substrate of the first NMOS region, and including a first high-k layer interposed at an interface between the first gate dielectric layer and the first metal electrode and containing a dipole-inducing chemical species; and a second conductive pattern including a stacked structure of a second gate dielectric layer and a second metal electrode over the substrate of the second NMOS region, and including a second high-k layer interposed at an interface between the second gate dielectric layer and the second metal electrode.

An integrated semiconductor photodetector and its fabrication method are disclosed, relating to the field of integrated photodetector technology. This invention addresses the problems of existing detectors, such as limited functionality, insufficient responsivity, low integration, and difficulty in achieving synergistic miniaturization and high performance improvement. The method involves depositing a Cr conductive layer on the front side of a superlens substrate, uniformly coating the conductive layer surface with photoresist, pre-baking to prepare a dot-matrix mask pattern, developing and fixing followed by Ni deposition, and then stripping to obtain the Ni dot-matrix mask. ICP etching is used to remove the surface conductive layer, and a nanopillar array superlens structure is then fabricated. A photodetector layer is transferred to the back side of the substrate. Positive photoresist is spin-coated onto the substrate surface, pre-baking to prepare a source / drain electrode pattern, developing and fixing followed by sequential deposition of an adhesion layer metal and an electrode body metal layer. The metal layer in the non-electrode region is then stripped to obtain the metal electrode in contact with the photodetector layer, completing the detector fabrication. This invention can be applied to polarization imaging, space remote sensing, airborne detection, and optical communication.

The invention provides a preparation method of a solar cell. A continuous electrode layer and a continuous electrode protection layer are sequentially prepared on a first surface of a semi-finished solar cell; the semi-finished solar cell comprises a semiconductor substrate, a semiconductor layer and a passivation layer; preparing a continuous metal reaction layer on the electrode protection layer, wherein the melting point of the metal reaction layer is lower than that of the electrode protection layer; irradiating a part of the metal reaction layer and a part of the electrode protection layer by adopting laser, so that the metal reaction layer and the electrode protection layer are alloyed and form a micro hole structure; wherein the laser irradiation area is an area outside the position of the target electrode structure; and corrosion: the electrode layer corresponding to the laser irradiation area is removed after reacting with the corrosive liquid, the electrode protection layer is separated from the metal reaction layer, and the electrode protection layer and the electrode layer corresponding to the non-laser irradiation area after corrosion are reserved to form a target electrode structure. The method is high in manufacturing precision and has no damage to the substrate; and the obtained metal electrode grid line is neat in edge and free of electric leakage risk.

This invention relates to a lithium metal electrode and a method for manufacturing the same. The lithium metal electrode of this invention includes a current collector; a metal layer located on at least one side of the current collector and comprising a lithium alloy; and a protective layer located on the metal layer, the protective layer comprising amorphous carbon and silicate clay minerals having a 2:1 crystal structure.

The application develops a high-thermal-conductivity substrate, a flexible thermoelectric device and a wearable device. Relates to the field of thermoelectric devices, the high-thermal-conductivity substrate comprises three parts from top to bottom, which are layer one, layer two and layer three. The first layer is a heat-conducting silica gel pad, which can tightly adhere to an external heat source; the second layer is a flexible substrate, which enables the device to better adhere to a curved surface; and the third layer is a metal electrode deposited on the flexible substrate, which is used for welding thermoelectric particles. The application obtains the high-thermal-conductivity substrate through ultrasonic welding, constructs an efficient heat transfer channel, and thus improves the adhesion to the surface of the external heat source and the comprehensive performance of the f-TED.

The application provides a solar cell and a preparation method thereof. The solar cell comprises a silicon base, an intrinsic amorphous silicon layer, a doped amorphous silicon layer, an ITO thin film and a metal electrode which are sequentially arranged on one side of the silicon base. The ITO thin film comprises at least two ITO films, and the grain sizes of the different ITO films are different. Compared with the prior art, the ITO thin film of the application comprises at least two film layers with different grain sizes, so that the IV performance of the solar cell is better, and the product reliability is further guaranteed.

The application discloses a flexible electrode based on liquid metal screen printing and magnetron sputtering and a preparation method, wherein Ga-In alloy is prepared into nanoparticle ink to realize room-temperature screen printing of high-resolution patterns; TPU hot-press packaging and mechanical stretching activation are utilized to construct a stretchable conductive path; and a Ni / Au layer is magnetron-sputtered on a conductive window to improve the conductivity and stability of the electrode. The electrode process is simple, low in cost and compatible with the existing screen printing production line, and is suitable for wearable electronics, biological electrical monitoring and other fields, and solves the defects of easy brittle fracture of the existing metal electrode and poor conductivity of the conductive polymer electrode.

This invention discloses a semiconductor device, a power module, and an electronic device, relating to the field of semiconductor technology. The semiconductor device includes a first gate material, a gate, and a dummy gate. The first gate material is connected to a first contact hole. A gate portion is formed on the first gate material and electrically connected to a metal electrode through the first contact hole. A dummy gate is formed between the first gate material and the gate and connected to a second contact hole, electrically connected to a metal electrode through the second contact hole. The dummy gate is disposed at a distance from the first gate material and the gate. The semiconductor device provided by this invention has a second contact hole directly etched on the dummy gate, eliminating the connection method through the gate material and the second contact hole. This avoids the size of the semiconductor device being affected by the minimum dimension between the gate material of the dummy gate and the first gate material, thus facilitating miniaturization design.

The present application relates to a lithium metal electrode and a manufacturing method thereof, the lithium metal electrode of the present application comprising: a current collector; a coating layer located on at least one surface of the current collector and comprising a lithiumophilic alloy material; and a protective layer located on the coating layer; the coating layer accounting for 25.0 to 80.0% of the total area of the current collector.

The application belongs to the technical field of zinc-based energy storage devices, and particularly relates to a composite gel layer modified zinc metal electrode, a preparation method thereof and application thereof in zinc-based energy storage devices. Acrylamide, sodium alginate, water, N,N-methylene bisacrylamide and ammonium persulfate are mixed to obtain a mixture; the mixture is applied to the surface of a zinc metal material, and then heat treatment is performed to initiate a polymerization reaction of acrylamide, thereby obtaining an electrode semi-product; a zinc metal salt solution is applied to the surface of the semi-product to initiate a polymerization reaction of sodium alginate, thereby obtaining the composite gel layer modified zinc metal electrode. The composite gel layer modified zinc metal electrode provided by the application exhibits higher cycle stability and a longer service life when applied to aqueous zinc ion hybrid capacitors, zinc ion batteries, gel-state zinc ion capacitors and gel-state zinc ion hybrid capacitors and other energy storage devices.

The present invention relates to a lithium metal electrode, an anode-free electrode, and a manufacturing method therefor, wherein the lithium metal electrode comprises: a current collector; a metal layer disposed on at least one surface of the current collector and including a lithium alloy alloyed with a lithiophilic material; and a protective layer disposed on the metal layer and including a carbon-based material and at least one of a nitrogen-based alloy and a magnesium-based alloy, and does not exhibit a peak value at 17 to 20° in an XRD pattern.

This invention discloses a perovskite solar cell using a perfluorinated additive and its fabrication method. The cell comprises, from bottom to top, a substrate electrode, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, a hole blocking layer, and a metal electrode. The perovskite light-absorbing layer is prepared by dissolving a precursor material of the perovskite light-absorbing layer in a solvent and then adding a perfluorinated additive, wherein the perfluorinated additive is perfluorotoluene or perfluoronaphthalene. The precursor material of the perovskite light-absorbing layer is (FA... X MA Y Cs Z The perovskite crystals are PbI3, where X = 0.8~1.2, Y = 0.1~0.3, Z = 0.01~0.05, and X+Y+Z=1. This invention utilizes perfluorotoluene and perfluoronaphthalene to regulate the crystallization rate of perovskite crystals, thereby improving the wettability of the perovskite solution on a SAM substrate, enhancing the thermal stability of the perovskite film, adjusting the surface tension of the perovskite precursor solution, improving film quality and surface coverage, and ultimately increasing the photoelectric conversion efficiency of perovskite solar cells, enabling the fabrication of large-area perovskite solar cells.

This invention relates to the field of solar cells and discloses a perovskite solar cell and its fabrication method. The cell has a standard structure, comprising, from bottom to top, a transparent conductive glass layer, an electron transport layer, a bridging molecule modification layer, a perovskite light-absorbing layer, a hole transport layer, and a metal electrode layer; or, the cell has an inverted structure, comprising, from bottom to top, a transparent conductive glass layer, a hole transport layer, a bridging molecule modification layer, a perovskite light-absorbing layer, an electron transport layer, and a metal electrode layer; the structure of the bridging molecule is shown in formula (1), where m is taken from 0, 1, or 2, and n is taken from 0, 1, or 2. The cell structure includes a bridging molecule modification layer, which helps improve the transport performance of the electron transport layer or hole transport layer, reduces carrier interface loss, and simultaneously interacts with the buried interface of the perovskite light-absorbing layer, synergistically passivating to achieve high-quality interface contact, resulting in higher photoelectric conversion efficiency.

The application provides a large-aperture middle-wave infrared continuous zoom optical system capable of realizing electromagnetic shielding, comprising a first front lens, a second front lens, a zoom lens, a compensation lens, a focusing lens, a first relay lens, a second relay lens and a third relay lens arranged in sequence along the optical axis direction from the object side to the image side; the first and second front lenses are meniscus positive lenses with convex surfaces facing the object side, the zoom lens is a double-concave silicon negative lens, the compensation lens is a double-convex silicon positive lens, and the first, second and third relay lenses are a double-convex silicon positive lens, a double-concave germanium negative lens and a double-convex silicon positive lens in sequence. The secondary imaging configuration designed by the application improves the optical axis consistency precision in the full field of view during optical mechanical adjustment, and realizes clear imaging of an infrared dim small target with a large optical aperture. The outer side of the light transmission area of each optical element extends outward with a modified extension structure, a metal electrode is plated on the surface, and an antireflection film is plated on the light transmission area, so that the imaging system is suitable for a strong electromagnetic environment.

The present application relates to the technical field of semiconductor manufacturing, and particularly relates to a light emitting diode, a light emitting device and a manufacturing method. The light emitting diode comprises an epitaxial structure with a first surface and a second surface, and the epitaxial structure comprises a first semiconductor layer; the first semiconductor layer comprises a first ohmic contact layer on the side of the first surface, which is made of Al x Ga y InP, 0<=x<=1 or 0<=y<=1; a first metal electrode is located on the first surface and comprises a main electrode and a plurality of extension electrodes; the extension electrodes are located on the first ohmic contact layer; the projected area of the extension electrodes on the first surface is less than or equal to the projected area of the first ohmic contact layer on the first surface as viewed from the top. The present application can effectively solve the problem of large light absorption of the traditional GaAs as the ohmic contact layer, avoid the problem of unstable forward voltage output caused by wafer deformation or alignment deviation during the process of the traditional gold half contact, and effectively improve the electrochemical corrosion resistance of the entire electrode structure.

This application relates to a biosensing electrode with sarcosine oxidase-directed modification, its preparation method, and its application in the field of biosensing technology. The biosensing electrode includes: a metal electrode, and a DNA-enzyme composite nanostructure connected to the metal electrode; the DNA-enzyme composite nanostructure includes a DNA electron transport module and an enzyme catalysis module; the DNA electron transport module includes a DNA sheet structure and a mediator embedded in the DNA sheet structure; the enzyme catalysis module includes a sarcosine oxidase substrate complex, which is connected to the DNA sheet structure; the sarcosine oxidase substrate complex, the mediator-containing DNA sheet structure, and the metal electrode are spatially ordered in the sequence of sarcosine oxidase substrate complex – mediator-containing DNA sheet structure – metal electrode. This biosensing electrode, under the condition of introducing a mediator, can improve the electron transport rate, thus exhibiting a good signal response during sarcosine testing.

This invention discloses a flexible perovskite solar cell module and its discontinuous laser interconnection process. Addressing the problem that continuous P2 scribing lines in existing flexible modules easily induce stress concentration and crack propagation, a discontinuous, dashed P2 interconnection structure is proposed. This structure consists of alternating "conducting segments" and "bridging segments" along the current transmission direction. The conducting segments achieve ohmic contact between the metal electrode and the transparent conductive layer; the bridging segments retain a complete and continuous photoelectric functional layer film, acting as micromechanical reinforcements to prevent crack propagation along the longitudinal direction of the scribing grooves. By controlling the laser scanning path and shutter timing, alternating conducting and bridging segments are formed. This significantly improves the module's bending resistance without increasing the dead area of ​​the module.

The invention belongs to the field of zinc battery materials, and particularly relates to a preparation method of a modified zinc metal electrode, a to-be-modified zinc metal negative electrode is placed in a polishing solution for surface modification treatment, and the modified zinc metal electrode is prepared; the polishing solution is a solution in which a compound shown as a formula 1 is dissolved. The invention also comprises the modified zinc metal electrode prepared by the preparation method as well as preparation and application of the modified zinc metal electrode. According to the invention, the zinc electrode is innovatively placed in the polishing solution containing the components in the formula 1 for surface chemical polishing and etching, so that the 002 crystal face can be accidentally and efficiently induced, the texture coefficient of 002 can be improved, moreover, the surface physical and chemical structure of the zinc electrode can be optimized, and the high-current cycle performance can be improved when the zinc electrode is used for assembling a zinc battery.

The utility model relates to the technical field of solar energy, disclose a kind of metal electrode for solar cell, solar cell and photovoltaic module.The metal electrode includes: be located in the metal seed layer (it is at least one layer in silver seed layer, nickel seed layer, zirconium seed layer, titanium seed layer, chromium seed layer, nickel silicon alloy seed layer, copper alloy seed layer) of silicon matrix surface grid line area, be located in the base metal grid line (it is copper grid line and / or aluminum grid line) of metal seed layer surface, and be located in the copper phosphate protective layer (it is copper phosphate layer and / or organic copper phosphate compound layer) of base metal grid line surface.The metal electrode is cooperated by metal seed layer, base metal grid line (such as copper grid line) and copper phosphate protective layer, can reduce contact resistance and ensure interface bonding force, can also save cost, can also improve the corrosion resistance of base metal grid line, the stability and reliability of the metal electrode long-term use outdoors are improved, and battery efficiency decay is slowed down.

The application discloses a preparation method of a nano or atomic scale spin valve, which comprises the following steps: preparing a buffer layer and a metal electrode on a substrate surface, preparing a magnetic metal point contact device based on a proximity effect photolithography method, placing the device on a vacuum probe station, preparing an atomic scale point contact structure by using a current feedback control method, and preparing a magnetic tunnel junction with a magnetic resistance of up to 40% by natural oxidation, so as to obtain the nano or atomic scale spin valve. The preparation method can effectively control the contact width of the atomic contact point, and compared with the prior art, the complexity of the spin valve structure is reduced, and the device power consumption is reduced to a certain extent. The preparation method is simple, the magnetic tunnel junction has a large magnetic resistance, and is compatible with a traditional CMOS process, so that an advantage is provided for the integration of subsequent devices.

The application discloses a perovskite solar cell and a preparation method and a battery assembly thereof. The perovskite solar cell comprises, in sequence, a transparent conductive substrate, a hole transport layer, a perovskite active layer, an interface modification layer, an electron transport layer, a buffer layer and a back electrode; wherein the back electrode is a nickel electrode. The application uses a nickel electrode as the back electrode of the perovskite solar cell, replaces the traditional metal electrode, has intrinsic chemical stability, suitable energy level matching, low cost and scalable preparation advantages, does not need to set a barrier layer, and is favorable to improving the stability of the perovskite solar cell.

The disclosure provides a waterborne cleaning robot with a sterilization function, including a machine body, a storage component, and a sterilization device. The machine body is capable of moving on a water surface. An accommodating cavity is formed in the machine body, and the storage component is detachably mounted in the accommodating cavity. A rolling component capable of bringing garbage into a cavity of the storage component is rotationally mounted on the storage component or the machine body. The sterilization device is configured to sterilize and disinfect water. The sterilization device includes a chlorine tablet disinfection component and / or a electrolytic device, the chlorine tablet disinfection component includes a plurality of chlorine tablets, and at least part of the chlorine tablets are placed in the water. The electrolytic device includes at least one metal electrode, and the metal electrode is partially or completely submerged in the water.

A radiofrequency ablation system will comprise a radiofrequency ablation catheter. The radiofrequency ablation catheter will comprise an expandable ballon, an inner tube with a multi-lumen structure, a guidewire tube, an outer sheath, and a radiofrequency electrode. The radiofrequency electrode will be flexible with a metal electrode layer, liner layer, flexible conductor layer, and substrate layer. The radiofrequency ablation catheter can be used to treat a subject's condition by ablating target tissue, such as Type II Diabetes Mellitus. Diabetes can be treated or alleviated due to a decrease in a subject's blood glucose and weight in response to the ablation of the target tissue.

The present invention provides a tandem solar cell and a preparation method for the tandem solar cell. The tandem solar cell comprises a front electrode, a first tandem layer, a tunnel recombination layer, a second tandem layer, and a back electrode. A first deposited metal layer is arranged between the front electrode and the first tandem layer, and is used for improving the adhesion between a metal slurry and the cell in the process of preparing a tandem cell electrode at a low temperature, and reducing contact resistance between the cell and the metal slurry, thereby improving the conductivity between the metal electrode and perovskite.

The application provides a high-durability FeFET based on a ferroelectric hafnium aluminum oxide and aluminum oxide gate stack and a preparation method thereof, and belongs to the field of micro-nano electronics. The FeFET device comprises a silicon substrate, a patterned aluminum oxide intermediate layer, a hafnium aluminum oxide ferroelectric layer, a gate metal electrode and a contact metal are sequentially arranged on the surface of the silicon substrate, a source-drain region is formed on the surface of the silicon substrate through self-aligned ion doping, a source-drain metal contact electrode is arranged above the source-drain region, the hafnium aluminum oxide ferroelectric layer is grown through atomic layer deposition, the cycle number of hafnium oxide and aluminum oxide is controlled in the atomic layer deposition cycle process to control the atomic proportion of doping, the proportion of hafnium atoms and aluminum atoms in the finally formed hafnium aluminum oxide ferroelectric layer is 24:1, and the hafnium aluminum oxide ferroelectric layer stores two storage states in different polarization states. The application can improve the durability of the FeFET storage device.

The utility model provides a kind of self-cleaning PID gas sensor, including cavity and the ultraviolet light source being arranged in cavity, a high frequency electric field generator, an electronic collection electrode, current voltage conversion circuit and control device, the electronic collection electrode includes polytetrafluoroethylene shell and inserts in the metal electrode piece of polytetrafluoroethylene shell inner cavity surface;The polytetrafluoroethylene shell is further provided with carbon nanotube film, and the carbon nanotube film is further provided with electric connection point, and the control device is connected by electric connection point, to be energized to generate heat under the control of the control device;Further, the surface of the electronic collection electrode is provided with piezoelectric ceramic, and the piezoelectric ceramic is vibrated under the control of the control device.In this way, PID gas sensor not only improves the accuracy of detection, but also enhances the reliability and durability of the equipment.

The present disclosure provides a leadless glass substrate micro-hotplate and a preparation method thereof. The micro-hotplate comprises: a glass substrate, which has a glass film structure on the front surface of the glass substrate, two through-hole structures respectively arranged on both sides of the glass film structure, and a conductive silicon column arranged in each through-hole structure; a heat insulation groove arranged on the back surface of the glass substrate opposite to the glass film structure, and an ohmic contact metal electrode arranged at the bottom end of the conductive silicon column on the back surface of the glass substrate; a heating electrode and a detection electrode formed on the glass film structure; and an insulation structure formed between the heating electrode and the detection electrode on the glass film structure. The micro-hotplate is prepared by using the glass substrate, which has a lower thermal conductivity than the silicon substrate and is integrally formed by using a hot reflow process to soften and melt the glass wafer at high temperature. The micro-hotplate prepared by using the glass substrate can effectively reduce the heat loss of the micro-hotplate and improve the structural stability of the micro-hotplate.

The application relates to the technical field of photoelectric devices, in particular to an RC-Micro LED device and a preparation method thereof, which comprises, from bottom to top, a second substrate, a metal conductive support layer, a metal electrode layer, a first mirror layer, a transparent conductive layer, a gallium nitride epitaxial layer and a second mirror layer; the gallium nitride epitaxial layer is in a convex mesa structure, an insulating layer is covered on the sidewall of the convex mesa structure; the first mirror layer and the second mirror layer are oppositely arranged to form a Fabry-Perot resonant cavity structure. The RC-Micro LED device can meet the transmission requirement of high-speed short-distance optical interconnection.