734 results about "Metallic electrode" patented technology

The invention discloses a vortex beam orbital angular momentum detector based on surface plasmon and a detection method, and belongs to the field of micro-nano photonics and photoelectric detection. The detector is based on a plane photoelectric detector of a metal-semiconductor-metal type, a vortex light field beam splitting structure is arranged on a metal electrode on one side of the detector or between two metal electrodes, the vortex light field beam splitting structure comprises an incident coupling grating, an incident light field carrying different orbital angular momentums can be split into plasmons in different directions, and the plasmons in different directions can be split into a vortex light field. The single detector resolution of the orbital angular momentum of the vortex beam is realized through the direction and propagation loss difference of plasmons. The detector is compatible with an existing semiconductor technology, the structure is simple, vortex light beams carrying high-order orbital angular momentum can be detected, and the rotation direction of a vortex light field can be detected.

The invention provides an electro-optical modulator and a modulation method thereof, the electro-optical modulator comprises a substrate, a buried oxide layer and a lithium niobate waveguide layer are sequentially stacked on the substrate, and the lithium niobate waveguide layer comprises a first optical waveguide and a second optical waveguide; the electrode layer comprises a composite traveling wave electrode and a direct-current electrode, and the direct-current electrode is arranged on one side, in the signal transmission direction, of the composite traveling wave electrode; wherein the composite traveling wave electrode comprises a metal electrode and a polymer electrode, the metal electrode is embedded into the buried oxide layer, the polymer electrode is arranged on the surface of the buried oxide layer, and the composite traveling wave electrode is arranged between the first optical waveguide and the second optical waveguide and arranged on the side faces of the first optical waveguide and the second optical waveguide respectively; wherein the direct current electrode is arranged between the first optical waveguide and the second optical waveguide. The electro-optical modulator is high in electro-optical conversion efficiency, the plasma effect caused by light field coupling is effectively avoided, and the light loss of the device is remarkably reduced.

The invention discloses a perovskite solar cell based on a cross-linked interface passivation layer, and relates to the technical field of photovoltaic cell materials. The perovskite solar cell sequentially comprises a transparent conductive substrate, an electron transport layer, a perovskite light absorption layer, a crosslinking interface passivation layer, a hole transport layer and a metal electrode from bottom to top, and the cross-linked interface passivation layer is made of a 4-[10-(4-{(1, 2, 2-trifluorovinyl) oxy} phenyl)-10H-phenoxazine-2-yl] phenylphosphonic acid material. The cross-linked interface passivation layer can significantly improve the photovoltaic performance and stability, the intrinsic stability of the device is greatly enhanced by the cross-linked network, and in a double-85 aging test of 85 DEG C / 85% RH, the time required for attenuating the efficiency of the device to 80% of an initial value can exceed 1000 hours.

The present invention provides an organic electric element including a metal patterning layer formed on the outside of a metal electrode and an electronic device thereof, and by forming a patterning auxiliary photosensitive layer made of a material with excellent photosensitivity under the metal patterning layer, it is possible to easily measure the thickness of the metal patterning layer.

The invention relates to a photovoltaic cell and a preparation method of the photovoltaic cell. The photovoltaic cell comprises: a substrate having a textured surface, the textured surface comprising a plurality of first pyramids and a plurality of second pyramids, the plurality of second pyramids being arranged between the plurality of first pyramids; the tower footing size of the second pyramid is larger than that of the first pyramid, and the tower height of the second pyramid is larger than that of the first pyramid. According to the invention, the scattering capability of broadband light can be enhanced, the problem that the traditional single-scale pyramid texture surface is insufficient in scattering of long-wave light is effectively improved, and the light capturing and absorbing effects of the photovoltaic cell are improved; the dual-scale pyramid suede can be better matched with the passivation contact layer, so that the surface recombination phenomenon is reduced, and the high open-circuit voltage of the photovoltaic cell can be maintained; the second pyramid can also provide an adaptive contact basis for the metal electrode, and the contact resistance between the electrode and the substrate is reduced. Therefore, the photoelectric conversion efficiency of the photovoltaic cell can be effectively improved.

The invention discloses a laser chip ohmic contact annealing optimization method and related equipment. The method comprises the steps that a metal electrode and a conductive mark layer are formed on the surface of a semiconductor through deposition; applying electrical excitation to the conductive mark layer and collecting electrical response in the annealing temperature rise stage to establish an initial response reference of the position of the conductive mark layer; in the annealing heat preservation stage, the electrical response change of the conductive mark layer is monitored, and the real-time response is compared with the initial response reference so as to judge the ohmic contact forming state of the position where the conductive mark layer is located; and adjusting annealing process parameters according to the judgment result of the ohmic contact forming state. According to the scheme, in-situ monitoring and self-adaptive adjustment of ohmic contact forming states at different positions in the annealing process can be achieved, and the uniformity and yield of ohmic contact of the laser chip are improved.

The invention discloses a discrete device packaging structure based on direct lead bonding, which belongs to the technical field of semiconductor device packaging and comprises a power semiconductor chip, a drain metal substrate, a grid lead terminal, a drain lead terminal, a bonding wire and a supporting shell. The drain electrode metal substrate is connected with the lower surface of the power semiconductor chip through solder. The gate metal electrode on the upper surface of the power semiconductor chip is connected with the gate lead terminal through a bonding wire, and the source metal electrode on the upper surface of the power semiconductor chip is connected with the source lead terminal through solder. The interior of the supporting shell is filled with silica gel or an injection molding process, and the supporting shell covers the power semiconductor chip to serve as an insulating medium. The power density of the device is improved, the parasitic parameter of the whole device is reduced, and the reliability of the interconnection structure is improved.

The invention discloses a flexible hydrogel neural electrode and a preparation method and application thereof. The flexible hydrogel neural electrode comprises a flexible substrate layer, an electrode layer and a packaging layer which are sequentially arranged in a stacked mode, the flexible substrate layer and the packaging layer are each of a hydrogel fiber composite film structure formed by compounding a fiber film and hydrogel, and the fiber film is embedded in the hydrogel; the fiber film is a polycaprolactam fiber film, and the hydrogel is polyvinyl alcohol hydrogel; the electrode layer comprises a plurality of metal electrodes, and each metal electrode is provided with an electrode point and a bonding pad; the packaging layer is provided with a plurality of hole structures, and the holes are arranged corresponding to the electrode points and the bonding pads and enable the electrode points and the bonding pads to be exposed. The flexible hydrogel neural electrode provided by the invention has good biocompatibility, swelling resistance and process compatibility; meanwhile, the flexible hydrogel neural electrode can be stably applied to an implantable brain-computer interface and is used for realizing long-term stable acquisition and transmission of neural signals.

A metal-semiconductor contact structure, a solar cell and a photovoltaic module are provided. The metal-semiconductor contact structure includes: a doped semiconductor layer; a metal electrode in contact with the doped semiconductor layer; a first conductive region provided at a contact interface between the doped semiconductor layer and the metal electrode, and including: a first conductive structure including a plurality of first metal particles distributed in the first conductive region, at least part of the first conductive structure contacting the doped semiconductor layer; and a second conductive structure, wherein the second conductive structure is radial, at least part of the second conductive structure is located on a surface of the first metal particles, and the second conductive structure has a radial direction towards the metal electrode; wherein the metal electrode, the first metal particles, and the second conductive structure all have a same metal element.

The invention discloses a thin-film barium titanate electro-optical switch unit based on a composite electrode and an array thereof. The optical switch unit comprises a first waveguide optical fiber coupling module, a second waveguide optical fiber coupling module, an optical beam splitting module, an electro-optical phase shift region, an optical beam combining module, a third waveguide optical fiber coupling module and a fourth waveguide optical fiber coupling module. Wherein the composite electrode of the electro-optic phase shift region is composed of a metal electrode and a transparent conductive layer, the electrode is closer to the waveguide by utilizing the transparent characteristic of a transparent conductive material, the coupling of a light field and an electric field is effectively enhanced, and the extinction ratio is improved. Meanwhile, a barium titanate film with a high electro-optical coefficient is adopted as a waveguide material, and the performance is further optimized, so that the electro-optical switch unit has the excellent characteristics of low-voltage driving, high extinction ratio, low insertion loss and small size.

The invention relates to a preparation method of a low-resistance silicon carbide coating based on a molybdenum / tantalum metal electrode, which comprises the following steps: S1, substrate pretreatment: carrying out mechanical micro roughening, ultrasonic cleaning and drying on a Mo / Ta electrode, and then reducing to remove an oxidation film; s2, Si-rich nucleation: taking methyl trichlorosilane as a Si / C common source, hydrogen as carrier gas / reducing gas and nitrogen as an n-type doping source for gas supply to form a compact nucleation layer; s3, main body deposition is conducted, specifically, the temperature is adjusted to 1140-1180 DEG C, the total pressure is maintained to be 80-120 Torr, and gas supply continues to be conducted for deposition; s4, annealing and dechlorination: stopping methyl trichlorosilane, keeping hydrogen and nitrogen flushing, and then annealing; and S5, cooling and shaping: cooling and taking out the sample annealed in the step S4, and adjusting the surface roughness to a set value to obtain the low-resistance silicon carbide coating on the Mo / Ta electrode. Compared with the prior art, on the premise that conductivity is not sacrificed, atomic oxygen / oxygen ion resistance, sputtering resistance, thermal cycling stability and the like of the Mo / Ta electrode can be remarkably improved.

The invention discloses a polarization-dependent bipolar infrared detector based on a corner heterojunction, a preparation method and a photocurrent response polarity regulation and control method. The polarization-dependent bipolar infrared detector comprises a substrate, a corner Van der Waals heterojunction and a transferable metal electrode, wherein the corner Van der Waals heterojunction and the transferable metal electrode are sequentially stacked on the substrate from bottom to top; the corner Van der Waals heterojunction is obtained by sequentially stacking p-type semiconductors, n-type semiconductors and p-type semiconductors to form an npn junction and forming a corner by changing the crystal orientation included angle of the two p-type semiconductors; a built-in electric field is used for driving photon-generated carrier separation, so that the infrared detector works in a photovoltaic mode.

The invention discloses an on-chip fully-integrated optical circulator based on phase modulation. The on-chip fully-integrated optical circulator comprises a substrate, a buried oxide layer, an optical waveguide layer, an upper cladding and a metal layer used for manufacturing metal electrodes, the substrate, the buried oxide layer, the optical waveguide layer, the upper cladding and the metal layer are stacked, the optical waveguide layer comprises two input / output optical waveguide groups, a four-port resonant cavity and two metal electrode pairs, and the metal layer comprises four modulation areas; four ports of the resonant cavity are respectively connected with four interfaces of the modulation area, each input / output optical waveguide group is connected by a bent optical waveguide and coupled to the resonant cavity, the middle of the metal electrode pair is bent to form a coplanar waveguide electrode, and the middle of each two ends of the modulation area is connected by the coplanar waveguide electrode. The fully-integrated optical circulator is realized under the silicon-based substrate for the first time, is compatible with current mainstream optical integration platforms such as SOI, LNOI and LTOI, and can be widely applied to large-scale photonic integrated chips, such as the fields of optical communication, optical sensing, on-chip optical interconnection and the like.

The invention discloses a method for preparing a perovskite solar cell based on a fused salt doped Spiro-OMeTAD hole transport layer, and the method comprises the steps: dissolving lead iodide and formamidine iodide in a mixed solvent of N, N-dimethylformamide and dimethyl sulfoxide according to a molar ratio of (0.8-1.5): 1 to prepare an FAPbI3 perovskite precursor solution; the method comprises the following steps: mixing cyclohexylamine trifluoroacetic acid and 4-tert-butylpyridine according to a molar ratio of 1: (8-14), dissolving the mixture in a 70-110 mg / mL Spiro-OMeTAD chlorobenzene solution, adding an acetonitrile solution of LiTFSi, and stirring at normal temperature to obtain a hole transport material Spiro-OMeTAD solution; spin-coating the FTO substrate with an electron transport layer material, spin-coating the electron transport layer with the FAPbI3 perovskite precursor solution, and annealing to form a perovskite thin film; the method comprises the following steps: spin-coating an ammonium butyrate iodide solution on a perovskite thin film to obtain an interface modification layer, spin-coating a hole transport material Spiro-OMeTAD solution on the interface modification layer to obtain a cyclohexylamine trifluoroacetic acid doped Spiro-OMeTAD hole transport layer, and evaporating an interface modification layer and a metal electrode on the Spiro-OMeTAD hole transport layer.

The invention discloses a space high-temperature environment tolerant perovskite cell and a preparation method thereof, and relates to the technical field of solar cells, the perovskite cell comprises a substrate, a conductive layer, a hole transport layer, a first oxide layer, a perovskite light absorption layer, a second oxide layer, an electron transport layer, an interface layer and a metal electrode layer which are stacked in sequence, wherein the hole transport layer is made of nickel oxide; the crystal structures of the first oxide layer and the second oxide layer are perovskite crystal structures; the perovskite light absorption layer is made of inorganic metal halide with an ABX3 type structure; the interface layer is made of metal chromium; according to the invention, the problems of easy material decomposition and interface failure of the perovskite cell under a high-temperature condition are improved, and the high-temperature resistance of the perovskite cell is improved, so that the perovskite cell meets the requirement of long-term stable work in a space high-temperature environment.

The invention provides a perovskite solar cell and a preparation method thereof. The perovskite solar cell comprises a substrate, a first transparent conductive layer, a first carrier transport layer, a passivation layer, a perovskite light absorption layer, a second carrier transport layer, a second transparent conductive layer and a metal electrode which are stacked. The first carrier transport layer and the second carrier transport layer are respectively arranged on two opposite sides of the perovskite light absorption layer; the passivation layer is arranged between the perovskite light absorption layer and the first carrier transmission layer, and / or the passivation layer is arranged between the perovskite light absorption layer and the second carrier transmission layer; the material of the passivation layer comprises supramolecular ionic gel, and the supramolecular ionic gel is composed of a polymer and an imidazole halogen ionic compound. The passivation layer provided by the invention has good flexibility and bending performance, so that the film forming quality of the perovskite thin film and the photoelectric conversion efficiency and operation stability of the perovskite solar cell are improved.

The invention provides a hybrid micro / nano structure pressure sensor, a preparation method and electronic equipment. The hybrid micro / nano structure pressure sensor comprises an upper electrode, a lower electrode and an ionic conductive medium layer located between the upper electrode and the lower electrode, the surface of the upper electrode and the surface of the lower electrode are of a preset micro / nano composite structure formed through femtosecond laser etching. By introducing a programmable micro / nano composite structure etched by femtosecond laser on the surface of the metal electrode and combining with the ionic conductive medium layer, the technical problem that the existing pressure sensor is difficult to give consideration to both high sensitivity and wide detection range is solved.

The invention discloses a perovskite solar cell based on action of a strong electron withdrawing group substituted fluoropyridine additive and a preparation method thereof. The perovskite solar cell comprises a conductive electrode FTO, a first hole transport layer, a second hole transport layer, a perovskite active layer, a passivation layer, an electron transport layer, an interface modification layer and a metal electrode layer. Wherein the perovskite active layer comprises a fluoropyridine additive substituted by a strong electron withdrawing group. According to the invention, a strong electron withdrawing group is introduced to a key site of fluoropyridine, so that the coordination with Pb < 2 + > ions in perovskite is enhanced, uncoordinated metal defects on the surface are precisely passivated, and the formation of a deep energy level trap state is inhibited. Besides, the additive has an obvious regulation and control effect on the perovskite film forming process, can promote the formation of a large-grain dense film layer, improves the stability and repeatability of a device, and finally obtains a high-performance and high-stability perovskite solar cell.

The present application relates to a kind of lithium metal electrode and its manufacturing method, the lithium metal electrode of the present application includes: current collector;Metal layer, at least one surface of the current collector and including lithium alloy;Protective layer, on the metal layer;And film layer, on the surface of the protective layer, at least part includes LiF;When being measured by X-ray photoelectron spectroscopy (X-Ray Photoelectron Spectroscopy, XPS), the peak intensity that appears at 684~686eV is greater than the peak intensity that appears at 687~689eV.

Disclosed is a semiconductor device including a metal gate electrode optimized for a peripheral region. The semiconductor device includes a substrate including a first NMOS region and a second NMOS region whose line width is different from a line width of the first NMOS region; a first conductive pattern including a stacked structure of a first gate dielectric layer and a first metal electrode over the substrate of the first NMOS region, and including a first high-k layer interposed at an interface between the first gate dielectric layer and the first metal electrode and containing a dipole-inducing chemical species; and a second conductive pattern including a stacked structure of a second gate dielectric layer and a second metal electrode over the substrate of the second NMOS region, and including a second high-k layer interposed at an interface between the second gate dielectric layer and the second metal electrode.

The invention discloses a crosslinking self-assembly hole blocking layer material containing siloxane and anchoring groups, and belongs to the field of perovskite solar cells. In the hole blocking layer material, the siloxane component triggers alcoholysis reaction in an isopropanol medium to form a silane precursor with hydroxyl; si-OH groups between adjacent molecules are subjected to a condensation reaction to form a Si-O-Si cross-linked network; meanwhile, a Si-OH group in the precursor and an ester group on the surface of a PCBM molecule are subjected to an ester exchange process, and Si-O-C covalent linkage is constructed to realize chemical anchoring of PCBM; and an anchoring functional group at the tail end of the material and the surface of a silver electrode form a strong coordination effect, so that thermally-driven silver atom migration is effectively inhibited, and performance degradation of the perovskite solar cell under a high-temperature working condition is remarkably relieved. The invention opens up a new way for improving the thermal stability of the perovskite solar cell, and effectively solves the problem of device stability caused by metal electrode ion diffusion.

A ceramic body with an embedded capacitor. In some embodiments, a device includes: a ceramic body composed of a ceramic material; a first capacitor within the ceramic body; a first conductive trace; and a second conductive trace, the first capacitor including: one or more ceramic dielectric layers; two or more metallic electrodes; a first metallic terminal; and a second metallic terminal, the metallic electrodes alternating with the ceramic dielectric layers, the metallic electrodes begin connected alternately to: the first metallic terminal; and the second metallic terminal, the first metallic terminal being connected to the first conductive trace, the second metallic terminal being connected to the second conductive trace, the first capacitor having a volume of at most 10% of a volume of the ceramic body.

A kind of lead-free perovskite hemispherical photodetector, preparation method and its application in single-pixel lensless color imaging belong to the field of image processing technology.The detector is composed of chromium electrode layer, electron transport layer, perovskite layer, hole transport layer and metal electrode layer from inside to outside on the spherical surface of hemispherical transparent substrate.The perovskite obtained by the application has strong lead-free and excellent stability, outstanding charge carrier transport capacity, high collection efficiency and strong weak light sensing ability.The application uses perovskite for color imaging, directly converts optical signal into electrical signal, has high sensitivity, shows excellent performance with linear dynamic response range of 146dB, and has the advantages of uniform response capacity and uniform thickness.The halide perovskite used by the application has low cost, short preparation time, does not contain toxic element lead, improves the application range of perovskite detector, and reduces the manufacturing cost and time cost of perovskite detector.

The present invention relates to a perovskite solar cell and a tandem solar cell comprising the same, characterized in that the perovskite solar cell comprises: a substrate; a transparent electrode; a hole transport layer; a perovskite light absorption layer; an electron transport layer; and a metal electrode, wherein the electron transport layer is a graded thin film in which a chemical binding state of elements constituting the electron transport layer gradually changes from the lower portion thereof toward the upper portion thereof.

An integrated semiconductor photodetector and its fabrication method are disclosed, relating to the field of integrated photodetector technology. This invention addresses the problems of existing detectors, such as limited functionality, insufficient responsivity, low integration, and difficulty in achieving synergistic miniaturization and high performance improvement. The method involves depositing a Cr conductive layer on the front side of a superlens substrate, uniformly coating the conductive layer surface with photoresist, pre-baking to prepare a dot-matrix mask pattern, developing and fixing followed by Ni deposition, and then stripping to obtain the Ni dot-matrix mask. ICP etching is used to remove the surface conductive layer, and a nanopillar array superlens structure is then fabricated. A photodetector layer is transferred to the back side of the substrate. Positive photoresist is spin-coated onto the substrate surface, pre-baking to prepare a source / drain electrode pattern, developing and fixing followed by sequential deposition of an adhesion layer metal and an electrode body metal layer. The metal layer in the non-electrode region is then stripped to obtain the metal electrode in contact with the photodetector layer, completing the detector fabrication. This invention can be applied to polarization imaging, space remote sensing, airborne detection, and optical communication.

The invention relates to the technical field of laser micro-nano manufacturing, and discloses a filtering supercapacitor based on nanoparticle-shaped graphene / foam metal and a preparation method thereof, and the preparation method comprises the following steps: preparing a cyanate resin / foam metal composite film by employing foam metal with an open pore structure and a liquid cyanate monomer; carrying out laser processing by adopting an intermediate infrared large-size light spot laser beam and an ultraviolet small-size light spot laser beam, and carrying out in-situ laser induction on the surface of the foam metal to grow the nanoparticle-shaped graphene so as to prepare a nanoparticle-shaped graphene / foam metal electrode raw material; cutting the electrode raw material into an electrode, and attaching a second mask; and preparing an interlayer type filtering supercapacitor. The conductivity of the generated nanoparticle-shaped graphene / foam metal thin film is as high as 909.09 S / cm, the prepared supercapacitor still keeps a relatively good capacitance behavior at a scanning rate of 2500V / s, the phase angle is as high as-70 degrees at 120Hz, the surface specific capacitance is 245 [mu] F / cm < 2 >, and meanwhile, the supercapacitor has a cut-off frequency as high as 3kHz and an RC time constant as low as 0.33 ms.

A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a substrate, a semiconductor composite layer and a metal electrode structure. The semiconductor composite layer is disposed on the substrate, and the metal electrode structure is disposed on the semiconductor composite layer, which includes a metal pad layer, a metal barrier layer and a metal stack. The metal barrier layer has a specific thickness to prevent the metal stack from breaking through the metal barrier layer and diffusing to the metal pad layer during a heating process.

The present invention relates to a manufacturing method of a lithium metal electrode, and a lithium metal electrode manufactured according to the method, and a lithium secondary battery including the same, and more particularly, to a manufacturing method of the lithium metal electrode including (a) applying fluoroethylene carbonate on at least one surface of a lithium metal layer; and (b) rolling the lithium metal layer applied with the fluoroethylene carbonate to form a lithium fluoride protective layer on the at least one surface of the lithium metal layer.

The application discloses a perovskite solar cell and a preparation method thereof. The composition of the perovskite solar cell comprises a glass electrode, an electron transport layer, a sensitized layer, a perovskite film, a hole transport layer and a metal electrode which are sequentially arranged, and the sensitized layer contains stannous ions. The preparation method of the perovskite solar cell comprises the following steps: 1) immersing the glass electrode on which the electron transport layer is deposited into a soluble stannous salt solution for soaking, and then taking out and drying to form the sensitized layer on the electron transport layer; 2) depositing the perovskite material on the sensitized layer to form the perovskite film, and then sequentially depositing the hole transport layer and the metal electrode on the perovskite film to obtain the perovskite solar cell. The perovskite film in the perovskite solar cell has good uniformity and compactness, and the perovskite solar cell has high photoelectric conversion efficiency. The preparation method is simple, and is suitable for large-scale popularization and application.

The invention belongs to the technical field of detector preparation, and particularly discloses a preparation method of a B-site cation doped perovskite X-ray detector and a product. Comprising the following steps: respectively preparing a bottom-layer precursor solution SL with low doping concentration of B-site cations and a top-layer precursor solution SH with high doping concentration of B-site cations; firstly blade-coating the bottom-layer precursor solution SL on a base, then blade-coating the top-layer precursor solution SH on the surface of the base in a laminated manner to form a wet mold with a B-site cation longitudinal concentration gradient, and introducing a 2D organic cation solution into the surface of the wet mold to perform an in-situ reaction so as to construct a 2D / 3D perovskite heterostructure; and carrying out segmented annealing crystallization on the wet mold constructed with the 2D / 3D perovskite heterostructure to obtain a compact gradient doped perovskite thick film, and then preparing a metal electrode on the surface of the gradient doped perovskite thick film. According to the invention, doped ions adjust an energy band structure, the effective quality of carriers is reduced, and the mobility is improved, so that the photo-generated current response and the signal-to-noise ratio are improved.