6970results about How to "Improve pressure resistance" patented technology

A semiconductor device includes a back gate electrode composed of a first single-crystal semiconductor layer formed on a first insulating layer; a second insulating layer formed on the first single-crystal semiconductor layer and having a film thickness smaller than a film thickness of the first insulating layer; a second single-crystal semiconductor layer formed on the second insulating layer; a gate electrode formed on the second single-crystal semiconductor layer; and source and drain layers that are formed on the second single-crystal semiconductor layer and arranged on respective sides of the gate electrode.

An apparatus for selectively positioning intraoral anatomic features of a human patient to enhance upper airway stability for use alone or in combination with positive airway pressure as therapeutic treatment for obstructive sleep apnea and other conditions, such as snoring, which are symptomatic of upper airway instability.

A centrifugal pump has a pump base with inlet inducer openings that receive molten metal into an impeller chamber. An impeller structure in the impeller chamber passes the metal in a radial direction through an outlet inducer opening into a volute passage for discharge into the pool of metal in which the pump is located.

A system and method of providing bi-level CPAP therapy is provided that incorporates an infrared carbon-dioxide sensor to determine whether a patient is inhaling or exhaling. Patient exhalation causes the infrared light to be absorbed, while patient inhalation reduces the presence of carbon-dioxide causes little or no absorption of carbon-dioxide. The level of carbon-dioxide in an associated patient breathing interface is monitored for thresholds that trigger higher CPAP pressure upon inhalation and lower CPAP pressure upon exhalation.

Apparatuses for restricting fluid flow through a well conduit comprise a housing having a longitudinal bore and a collapsible seat disposed within the bore. The seat has a first position defining a first seat inner diameter when the apparatus is in the run-in position and a second position defining a second seat inner diameter when the apparatus is in the set position. The first seat inner diameter is greater than the second seat inner diameter. A plug element is adapted to be disposed into the bore and landed on the seat to move the seat from the first position to the second position. While in the second position, the seat restricts fluid flow through the bore and provides additional support to the plug member landed on the seat.

The invention provides an improved ventilation method and method for controlling a ventilator apparatus in accordance with same. More specifically, the present invention relates to a method of controlling a ventilator apparatus comprising the steps of placing a ventilator in a mode capable of adjusting airway pressure (P) and time (T), monitoring expiratory gas flow, analyzing the expiratory gas flow over time (T) to establish an expiratory gas flow pattern, and setting and / or adjusting a low time (T2) based on the expiratory gas flow pattern. Alternatively, the present invention relates to a method of controlling a ventilator apparatus comprising the steps of placing a ventilator in a mode capable of adjusting airway pressure (P) and time (T), and setting a low airway pressure (P2) of substantially zero cmH2O.

A method of manufacturing an electrolytic capacitor including the following steps as well as an electrolytic capacitor manufactured by the method are provided. The method includes: a dispersion impregnation step of impregnating, with a dispersion containing electrically conductive solid particles or powder and a solvent, a capacitor element having an anode foil with a dielectric coating film formed thereon and an opposite cathode foil that are wound with a separator interposed therebetween; a dry step of evaporating the solvent after the dispersion impregnation step to form an electrically conductive solid layer on a surface of the dielectric coating film; and an electrolytic solution impregnation step of impregnating a gap in the electrically conductive solid layer with an electrolytic solution. Accordingly, an electrolytic capacitor that can be manufactured more easily that is excellent in voltage proofing property and that has a lower ESR and a lower leakage current is provided.

A field effect transistor includes an i-type first semiconductor layer and a second semiconductor layer that is formed on the first semiconductor layer and the band gap energy of that is higher in magnitude than that of the first semiconductor layer. The first semiconductor layer and second semiconductor layer are each made of a gallium nitride-based compound semiconductor layer. A gate electrode 36 is formed on the second semiconductor layer; and a second electrode 39 is formed on the first semiconductor layer. Thus, the field effect transistor is constructed in such a manner as the first semiconductor layer and second semiconductor layer are interposed between the gate electrode 36 and the second electrode 39. By constructing like this, it is possible to discharge the holes that are accumulated in the channel from the elemental structure and to improve the withstand voltage of the field effect transistor.

A vertical type MOS field effect transistor has a super junction structure between a source electrode and an N+-type drain region. The super junction structure is constituted by a plurality of P-type single crystal silicon regions and a plurality of N-type single crystal silicon regions. Each of the plurality of P-type single crystal silicon regions and each of the plurality of N-type single crystal silicon regions are arrayed alternately. The super junction has two parts, that is, a cell forming region where a MOS structure is disposed and a peripheral region located at a periphery of the cell forming region. The source electrode contacts one of the P-type single crystal silicon regions in the peripheral region while disposed away from an end portion of the peripheral region that is located at an outermost in the peripheral region.

The present invention relates to a method of preparing a porous cross-linked polysaccharide chromatography matrix, which comprises to provide an aqueous solution of a gellable polysaccharide, wherein part of the hydroxyl groups are substituted with groups which are not susceptible to nucleophilic attack; to provide essentially spherical droplets of the substituted polysaccharide solution; to form a gel of the substituted polysaccharide solution; and to cross-link the gel by adding a cross-linking agent. The invention also encompasses a chromatography column packed with a matrix so produced as well as use thereof in e.g. protein purification.

A by-pass fluid flow amplifier which contains a primary nozzle and a primary profile for discharging compressed air into a conduit of the air amplifier and entraining ambient air in the process. A secondary nozzle and a secondary profile for discharging compressed air into the conduit of the air amplifier towards the rear that assists the primary nozzle such as to allow consistent fluid wall attachment of the compressed air and the entrained air caused by the primary nozzle and the primary profile. The secondary nozzle increases the total flow of the amplifier and prohibits the total flow from traveling towards the center of the conduit where flow reversal and turbulence are likely to occur.

An isolating circuit for an electrosurgical generator arranged to produce radiofrequency (RF) energy and microwave energy for treating biological tissues is provided. The generator has an RF channel and a microwave channel which are combined at a signal combiner to enable the RF energy and microwave energy to be delivered into tissues along a common feed path. The isolating circuit includes a tunable wavelength isolator at a junction between the microwave channel and the signal combiner, and can include a capacitive structure between a ground conductor of the signal combiner and a conductive input section of the waveguide isolator to inhibit coupling of the RF energy and leakage of the microwave energy. The isolating circuit can combine into a single tunable unit all the necessary components to isolate the microwave and RF channels from one another while providing a high withstanding voltage.

A honeycomb filter for purifying exhaust gases that can almost completely burn and remove particulates accumulated on a wall portion by a regenerating process allowing residual ashes on the wall portion to easily move inside a through hole because the ashes are easily separated from the wall portion. In the honeycomb filter a columnar body made of porous ceramics, having parallel through holes in the length direction with a wall portion interposed therebetween, is designed so that part or all of the wall portion that separates the through holes from each other functions as a filter collecting particulates, wherein a length 1 of the longest side in a cross section perpendicular to the length direction of the through hole and a length L in the length direction of the columnar body satisfy: 60≦L / 1≦500 and a surface roughness Ra (according to JIS B 0601) of the through hole inner wall satisfies: Ra≦100 μm