162results about How to "Improve pressure resistance" patented technology

The Coriolis mass flow meter of this invention comprises two parallel curved flow tubes 1 and 2, a drive unit 15, and a pair of vibration sensors 16 and 17. An inlet-side manifold 24 dividing the flow of a fluid being measured into the two flow tubes 1 and 2 from the inlet thereof, and an outlet-side manifold 25 joining the fluid flows flowing in the two flow tubes 1 and 2 to discharge from the fluid outlet thereof are mechanically connected to a meter body 30 only at the inlet side of the inlet-side manifold 24 and at the outlet side of the outlet-side manifold 25, respectively. With this arrangement, the effects of vibration transmitted from the meter body 30 and all structures connected thereto can be reduced at the joint parts between the inlet-side and outlet-side manifolds 24 and 25 that serve as vibration fulcrums.

In a method for producing an SiC semiconductor device, a p type layer is formed in a trench by epitaxially growing, and is then left only on a bottom portion and ends of the trench by hydrogen etching, thereby to form a p type SiC layer. Thus, the p type SiC layer can be formed without depending on diagonal ion implantation. Since it is not necessary to separately perform the diagonal ion implantation, it is less likely that a production process will be complicated due to transferring into an ion implantation apparatus, and thus manufacturing costs reduce. Since there is no damage due to a defect caused by the ion implantation, it is possible to reduce a drain leakage and to reliably restrict the p type SiC layer from remaining on the side surface of the trench.

A device includes a center portion, and a periphery portion disposed around the center portion. The periphery portion includes a first semiconductor layer, an intermediate layer, a second semiconductor layer, an insulation layer and an electrode. The intermediate layer includes a periodic construction having a first region and a second region. The center portion includes a contact region. The electrode extends to the periphery portion to have an extension length of the electrode between the contact region and a periphery of the electrode. The extension length of the electrode is equal to or longer than one-eighth of a distance between the contact region and an outer periphery of the periodic construction.

The invention provides a vacuum switch tube comprising an insulated case, an upper end cover, a lower end cover, a fixed conductive base, a first movable conducting rod and a second movable conducting rod, wherein the upper end cover is hermetically arranged at the upper end of the insulated case; the lower end cover is hermetically arranged at the lower end of the insulated case; the fixed conductive base comprises at least one joint and is fixedly arranged in the insulated case; the joints penetrate through the insulated case; the fixed conductive base is electrically and fixedly connected with a first fixed contact and a second fixed contact respectively; the first movable conducting rod penetrates through the upper end cover and first corrugated pipes connected with the inner sides of the upper end cover and is electrically and fixedly connected with a first movable contact arranged in a first vacuum chamber; and the second movable conducting rod penetrates through the lower end cover and second corrugated pipes connected with the inner sides of the lower end cover and is electrically and fixedly connected with a second movable contact arranged in a second vacuum chamber. The vacuum switch tube provided by the invention can realize three positions, thus improving the versatility.

A resin composition including the following components (A) to (C):

• • (A) polyarylene sulfide resin: 20 wt %<component (A)≦60 wt %;
  • (B) hexagonal boron nitride: 8 wt %≦component (B)≦55 wt %; and
  • (C) flat glass fiber: 15 wt % component≦(C)≦55 wt %

wherein the amount ratio of each component is a weight percentage relative to the total amount of the components (A) to (C).

The invention discloses a non-contact protection ring single-photon avalanche diode and a preparation method thereof. The non-contact protection ring single-photon avalanche diode is composed of a light-sensitive PN junction formed by a P+/deep N well, and an annular P well protection ring. The light-sensitive PN junction and the annular P well protection ring are spaced apart at a certain distance. A protection ring is formed by means of the P well around the light-sensitive PN junction to inhibit the edge breakdown phenomenon. The P well protection ring plays the role of a voltage divider, and the increase of an edge electric field of a light-sensitive region is inhibited. Through the standard CMOS process, a lightly-doped deep N-well is formed on a P-type lightly-doped silicon substrate, so that the electrical isolation with other electronic devices is achieved. The mutual influence between devices is avoided. A cathode, an anode and a contact through hole are etched out, and then alayer of aluminum film is deposited. After that, an electrode pattern is formed through the photoetching process. A high-layer interconnection metal is prepared through photoetching, etching and metallization processes. The metal is used for leading an electrical signal of the SPAD to a contact pad. A silicon oxide/silicon nitride passivation layer is sequentially deposited on the upper surface of a chip. Therefore, the scratch of the chip and the influence of the external environment can be avoided.

The invention relates to a high-voltage-resistant and high-energy-density capacitor and a preparation method thereof. The high-voltage-resistant and high-energy-density capacitor comprises a substrate, a bottom electrode, a dielectric layer and a top electrode, wherein Si or SiO2/Si is taken as the substrate; the bottom electrode is a metal film, a conductive oxide film or a combination of both; the dielectric layer consists of a BaTiO3 ferroelectric film; and the top electrode is a metal film point electrode. A metal target or/and conductive oxide target is adopted, and a single target is used for depositing a metal film or a conductive oxide film, or depositing the meal film and the conductive oxide film in sequence on the substrate in a radio-frequency or direct current magnetron sputtering way; a ceramic BaTiO3 target is adopted, and a BaTiO3 layer is deposited on the bottom electrode in a radio-frequency magnetron sputtering way; and a metal target is adopted, and the top electrode is deposited in a radio-frequency magnetron sputtering way. The film capacitor prepared with the method has the advantages of small size, high voltage resistance and breakdown field strength Eb of higher than 1000kV/cm; the practical discharging energy density is not less than 10J/cm<3>; and the loss is low, and the dielectric performance is kept stable when the frequency and temperature change.

The invention relates to water purifying equipment, an integrated waterway module thereof and a production method of the integrated waterway module. A plurality of runners are formed in the integrated waterway module. The integrated waterway module comprises at least a body and at least a cover body, wherein a plurality of grooves are formed in the bodies and/or cover bodies respectively; the bodies and the cover bodies are hermetically connected by injection molded rubber coated structures; the bodies and the cover bodies jointly surround a part of the plurality of runners. The water purifying equipment has the beneficial effects that an integral waterway part is used instead of various tangible pipelines and connectors, thus completely eradicating the biggest problem that water leakage is caused due to failure of connection and sealing of pipes and the connectors; the interior of the water purifying equipment is more concise; design of a plurality of connector interfaces is capable of facilitating arrangement of a plurality of connectors, so that all the parts in the equipment are arranged more compactly and reasonably.

The present invention discloses a colorful optical filter which comprises a colorful optical filtering substrate, a conducting layer and a spacer. The colorful optical filter is provided with a shading layer and a colorful filtering layer. The conducting layer is provided on the colorful optical filtering substrate, and the conducting layer is provided with at least one opening at the position relative to the shading layer and/or colorful filtering layer. The spacer is provided in the opening. The invention also discloses a method for preparing the colorful optical filter.

The invention relates to all sides pressing sealed type high pressure resistance sealing ring with framework belonging to a sealing material. The invention is characterized in that: the sealing ring is formed by a long strip framework (1) with the height H no less than 10mm and a long strip flexible sealing material (2) which are superposed and wrapped. Two end surfaces, the outer circular surface and the inner circular surface of the wrapped annular ring are respectively provided with coating layers (3), and the compressive strength is between 200MPa and 480MPa. The sealing ring has the advantages of simple structure, excellent compressive performance and wide application range, which is especially applicable to the sealing of a high pressure active surface.

Second diffusion layers to be guard rings of a second conductivity type are formed on the major surface of a semiconductor substrate of a first conductivity type in a guard ring region. An insulating film is formed on these second diffusion layers. The semiconductor device has a structure wherein a conductive film is formed on the insulating film between adjacent electrodes among a first surface electrode, second surface electrodes, and a third surface electrode.

The invention discloses an oil pump gear comprising the following components in percentage by weight: 0.3%-0.6% of graphite, 1.5%-2.5% of copper, 1.5%-2.5% of nickel, 0.4%-0.7% of molybdenum, 0.6%-0.9% of lubricating agent, 0.3%-0.5% of cutting agent, and the balance of ferrum. A manufacturing method of the oil pump gear comprises the following steps: mixing materials; pressing; sintering; grinding; immersing into oil; and the like. By adopting the components and the manufacturing method, the rigidity and the pressure resistance of gear materials are greatly improved, machining process becomes simpler and the production efficiency is enhanced significantly and the cost is reduced.

The invention relates to a high power high voltage generator which comprises a main circuit and a control portion. The main circuit adopts insulated gate bipolar translators (IGBTs) as an inversion module to form a full bridge inversion circuit. The output end of the full bridge inversion circuit is connected with a resonant circuit and a booster transformer to output high voltage. The control portion comprises a kilovolt (KV) double-ring adjusting circuit, a phase shift controller, a complex programmable logic device (CPLD) and an IGBT drive and protection circuit. The input end of the KV double-ring adjusting circuit receives KV feeding value and current feedback signals and voltage feedback signals of the main circuit, the output end of the KV double-ring adjusting circuit is connected with the CPLD through the phase shift controller, and output signals of the CPLD are transferred to grid electrodes of each IGBT in the main circuit through the IGBT drive and protection circuit. The high power high voltage generator improves inversion reliability, simultaneously reduces product cost, reduces the radiating mode, prolongs service life of the IGBT, can quickly build KV output and maintains high accuracy.

A method of in-situ processing of a subterranean oil shale formation to produce hydrocarbons comprising contacting the oil shale with (i) a carbon monoxide/water mixture or (ii) a carbon monoxide/water/hydrogen mixture together with at least one liquefaction promoter, under pressure and heat to produce hydrocarbons.

The invention provides a high-pressure-resistant flat heat pipe and a machining method thereof. The high-pressure-resistant flat heat pipe comprises an upper cover plate, a lower cover plate, capillary cavities and reinforcing ribs, wherein the upper cover plate is connected with the lower cover plate to form an airtight cavity, the reinforcing ribs arranged into a dot matrix are arranged on the upper cover plate and located in the airtight cavity, the upper cover plate is connected with the lower cover plate through the reinforcing ribs, communicated steam channels are arranged outside the reinforcing ribs, the capillary cavities are formed in the outer surfaces of the reinforcing ribs, and each capillary cavity is provided with a plurality of capillary core structures used for adsorbing liquid-phase working media. By arranging the cubic reinforcing ribs on the upper cover plate evenly, the pressure resistance of the flat heat pipe is improved. The inner surface is filled with the capillary cavities provided with the capillary core structures through sintering, and thus antigravity performance is realized.

In a multilayer heat exchanger of the present invention, a plurality of heat exchange units for performing heat exchange of a fluid fed from a plurality of compressors is stacked. Each of the heat exchange units has a structure that pluralities of flow passage plates and cooling plates are stacked. Concave grooves formed on surfaces are formed as flow passages of the fluid in the flow passage plates and cooling plates. The flow passage plates and cooling plates are made of metal, the flow passages are formed by chemical etching, and the stacked metal flow passage plates and cooling plates are bonded to each other by diffusion-bonding. Further, each of the heat exchange units is in one-to-one correspondence with each of the compressors.

This invention provides an aluminum alloy plate of battery shell for simultaneously enhancing compression strength and laser welding performance, and battery shell manufactured with this aluminum ally plate, namely, an aluminum alloy of battery shell composed of Si: 0.10-0.60 mass%, Fe: 0.05-0.60 mass%, over 0.70-below 1.0 mass%, Mn: 0.10-1.80 mass%, Mg: over 0.70-1.50 mass%, Zr: over 1.10-below 0.20 mass%, Ti: 0.03-0.25 mass%, surplus Al and unavoidable impurity, and aluminum alloy plate of battery shell manufactured with the chemical formulation and to be aged after manufacture.

The invention relates to a modified nitrile-butadiene rubber sealing gasket material and a preparation method thereof. The modified nitrile-butadiene rubber sealing gasket material is characterized by being prepared from the following raw materials in parts by weight: 100 parts of nitrile-butadiene rubber, 10-20 parts of terephthalic acid metal salt, 1-5 parts of anti-aging agent, 15-30 parts of carbon black N330, 1-2.5 parts of accelerant, 1-2 parts of sulphur, 3-6 parts of stearic acid, 3-5 parts of Si69 and 5-20 parts of plasticizer. The modified nitrile-butadiene rubber sealing gasket material is simple in proportioning, convenient in process and free of hazardous effects on the environment; and in addition, a rubber sealing gasket prepared by using the material is oil-resistant, good in pressure resistance and favorable in sealing effect.

The invention discloses a composite material, a preparation method of the composite material, and a lithium ion battery comprising the composite material, and belongs to the field of lithium ion battery materials. The composite material is in a core-shell structure. A shell layer of the composite material comprises a middle layer and an outer layer coated outside the middle layer. An inner core of the composite material is Li(NixCoyAlz)O2; the middle layer is Li(Ni1/3Co1/3Mn1/3)O2; the outer layer is LiNi0.5Mn1.5O4; and a molar ratio of the inner core to the middle layer to the outer layer of the composite material is a:b:c, wherein a+b+c=1, b is greater than 0 and less than 0.5, c is greater than 0 and less than 0.5, x+y+z=1, y=0.15, and z is greater than or equal to 0.03 and is less than or equal to 0.05. The composite material has the characteristics of comparatively high capacity, low alkalinity and electrolyte resistance, has good cycling stability and safety performance, has an obvious cost performance advantage, and is more suitable for application of a power battery. Structural precursors of the layers of the composite material are sequentially formed by utilizing a coprecipitation synthesis technology, so that good consistency and good homogeneity are achieved and the layers are tightly connected with each other. Besides, the composite material can be obtained by a single roasting process; and the cost can be lowered effectively.

A dielectric separation type semiconductor device having high voltage withstanding capability includes a primary dielectric layer (3-1) on a first surface of a semiconductor substrate (1), a first conductivity type first semiconductor layer (2) disposed oppositely to the substrate (1) with the primary dielectric layer (3-1) sandwiched, a first conductivity type second semiconductor layer (4) on the first semiconductor layer (2), a second conductivity type third semiconductor layer (5) surrounding peripherally the first semiconductor layer (2), a ring-like insulation film (9) surrounding peripherally the third semiconductor layer (5), a first electrode (6) on the second semiconductor layer (4), a second electrode (7) on the third semiconductor layer (5), a back-surface electrode (8) deposited on a second surface of the substrate (1), and a first auxiliary dielectric layer (3-2) disposed immediately below the second semiconductor layer (4), being junctioned to the second surface.

A programmable substance detector includes a light source, a sample cell, a programmable diffraction grating positioned to receive light from the light source and to direct diffracted light to the sample cell, and a detector associated with the cell to detect a match between a characteristic of the diffracted light and a corresponding characteristic of a substance within the cell.

A piezoelectric element is obtained using a method including: preparing a first structure; preparing a second structure; disposing a first facing electrode layer of the first structure to face a first surface of a vibration plate substrate and bonding the first structure to the first surface of the vibration plate substrate; processing the vibration plate substrate into a vibration plate by polishing or etching a second surface of the vibration plate substrate to which the first structure is bonded; preparing a laminate structure by disposing a second facing electrode layer of the second structure to face an exposed surface of the vibration plate and bonding the second structure to the vibration plate; and removing at least a part of a first silicon substrate of the first structure and a second silicon substrate of the second structure from the laminate structure.

The invention discloses a convex arc type magnetic fluid sealing device which comprises a shaft, a shell, pole shoes, magnet fluid and permanent magnets. The convex arc type magnetic fluid sealing device is characterized in that the shaft penetrates and extends out of the two ends of the shell; the part, located in the shell, of the shaft is provided with at least one circular ring; the outer circumferential faces of the circular rings are in a convex arc shape; at least two pole shoes are arranged on the inner surface of the shell; the part between every two adjacent pole shoes is provided with the corresponding annular permanent magnet; the pole hoes are of circular-ring-shaped structures; the inner circumferential faces of the pole shoes located between the circular rings and the shellare in a concave arc shape; and the magnetic fluid is arranged in sealing clearances between pole teeth and the shaft. By means of the convex arc type magnetic fluid sealing device, the sealing pressure-resisting capability of the magnetic fluid is greatly improved, and the problem that an existing sealing device cannot meet the requirement for high sealing performance under special conditions such as high speeds and heavy loads is solved.

The invention discloses lead-free sealing glass and a preparation method thereof, relates to the technical field of sealing glass, and aims at solving the problem of poor pressure resistance when the lead-free sealing glass is applied in the field of high-voltage electronics. The lead-free sealing glass comprises the following components in percent by weight: 30-60 percent of SiO2, 10-30 percent of BaO, 1-5 percent of Na2O, 1-10 percent of K2O, 2-10 percent of V2O5, 5-10 percent of CaO, 1-5 percent of Al2O3, 0-5 percent of B2O3, 1-3 percent of Fe2O3 and 0-5 percent of alkaline-earth metal oxide. The lead-free sealing glass is used for sealing metals, nonmetals or ceramics.

The invention provides a diode chip and a processing technology thereof, relating to a semiconductor discrete device and a processing technology thereof. The invention can overcome discharge in detection and creepage phenomenon in use. A circle of glassy protective layer is arranged at the edge of a chip, the horizontal projection of the chip is of a closed shape with no corner; the side edge is provided with a circle of semi-insulating polycrystalline silicon (SIPOS) film; and the glassy protective layer covers 70-95% of the upper part of the SIPOS film. The processing technology provided bythe invention comprises the following steps: 1) graving a wafer split pattern; 2) passivating the SIPOS film; 3) processing the glassy protective layer; 4) photoengraving three times; 5) cleaning; 6)removing photoresist; 7) splitting to obtain the chip. By the adoption of the invention, the point discharge of a square chip can be effectively prevented and the withstand voltage capacity of a diode can be improved. Before passivation with glass, passivation with an SIPOS film is carried out to absorb movable ions on the surface of the chip, thus the stability can be enhanced and the withstand voltage capacity can be improved; meanwhile, the bottoms of grooves still remains the SIPOS film and an SIO2 film, thus preventing Au layer adhesion in Au evaporation.

The invention provides a magnetorheological fluid for sealing. The magnetorheological fluid is composed of micro/nano-scale magnetic particles, a basic carrier fluid and additives, wherein the mass percent of the micro-nano-scale magnetic particles is 47-89.5%, and the mass ratio of the micro-scale magnetic particles to the nano-scale magnetic particles ranges from 0.2: 1 to 4.5: 1, and moreover, the particle size range of the micro-scale magnetic particles is from 2 microns to 20 microns, while the particle size range of the nano-scale magnetic particles is from 1nm to 15nm; the mass percent of the additives is 0.5-3%, while the mass percent of the basic carrier fluid is 10-50%. The magnetorheological fluid is better in sealing effect than the magnetorheological fluid which is obtained from single micro-scale magnetic particles, and capable of meeting the requirement for zero leakage of sealing; the magnetorheological fluid has magnetic conductivity better than the magnetorheological fluid which is obtained from single nano-scale magnetic particles, and therefore, the pressure endurance capability of a magnetorheological fluid sealing device is obviously improved.

The invention discloses a gallium-nitride-based power heterojunction field effect transistor with a local back barrier. The gallium-nitride-based power heterojunction field effect transistor is structurally composed of a substrate, an aluminum nitride nucleation buffering layer, an aluminum indium gallium nitride local back barrier layer, a gallium nitride channel layer and an aluminum indium gallium nitride barrier layer mainly from bottom to top, a source electrode, a drain electrode and a grid electrode are formed on the barrier layer, the source electrode and the drain electrode forms ohmic contact with the barrier layer, and the grid electrode forms schottky contact with the barrier layer. By introducing the aluminum indium gallium nitride local barrier layer with polarization intensity larger than the polarization intensity of the gallium nitride channel layer, negative polarization charges are left after interface charges of the aluminum indium gallium nitride barrier layer and the gallium nitride channel layer are balanced, effect of exhausting part of 2DEG of a grid-drain drift region channel is realized, and an LDD (low density drain) structure is formed, so that modulating of electric field distribution of the channel is realized to improve voltage resistance of a device.

The invention belongs to the technical field of semiconductors and relates to a carrier storage type grooved-gate IGBT (insulated gate bipolar transistor). The carrier storage type IGBT is structurally provided with two split gates and a deep groove; when a device is in a closed state, a carrier storage layer of the device is exhausted by adopting assistance of a deep groove, and meanwhile, the deep grove and the split gates form a stepped structure to weaken the peak value of an electric field of an emitter, so that voltage endurance capability of the device under higher carrier storage layer concentration is obviously improved. In addition, when the device is in an open state, a layer of the carriers can be further accumulated on the surface of a deep-groove structure 8, and conduction pressure of the device is further reduced.

The invention discloses a trench gate MOSFET, comprising an inner region and an edge region, wherein the edge region is located at the edge of the conduction region for leading out the gate structureof each cell in the conduction region; A first trench is formed in the inner region, and a second trench having a width equal to or greater than the first trench is formed in the edge region. Forminga first gate dielectric layer on the inner side surface of each first trench, and forming a second gate dielectric layer having a thickness greater than the first gate dielectric layer on the inner side surface of the second trench; Each of the first and second trenches is filled with a polysilicon gate, and each polysilicon gate is connected to the gate through a contact hole formed in the top ofthe polysilicon gate of the second trench. The invention also discloses a manufacturing method of a trench gate MOSFET. The invention can improve the withstand voltage ability of the edge region andcause the breakdown of the device to occur in the inner region, thereby improving the shock resistance of the device.

The present invention relates to a LDMOS (Lateral Double-diffused metal oxide semiconductor) and a manufacturing method thereof. A first buried layer with an impurity total amount gradually decreasedfrom left to right is injected and formed on a substrate, in the later diffusion process, the left side of the first buried layer is diffused towards the upper portion of an epitaxial layer due to theimpurities, the effective junction depth of the left side of the epitaxial layer becomes shallow, N-type impurities are decreased, when reverse bias is applied between the source and the drain of theLDMOS, the epitaxial layer region at the left side is easily exhausted, the exhaust line in the epitaxial layer region is rapidly extended towards the right with the increasing of the reversed bias voltage so as to have an effect on reduction of a peak electric field of the region, the junction depth of the region at right side of the first buried layer becomes shallow, P-type impurities are gradually decreased, the exhaust line of the P-type region can be rapidly extended towards a substrate region with a relative light concentration so as to rapidly reduce the electric field intensity of the drift region, improve the voltage endurance capability of the drift region and allow the device not to be untimely broken down in a vertical direction.