641results about How to "Reduced insertion loss" patented technology

Lightweight, low cost, high density electrical connectors are disclosed that provide impedance controlled, high-speed, low interference communications, even in the absence of shields between the contacts, and that provide for a variety of other benefits not found in prior art connectors, such as low insertion loss. Signal contacts and ground contacts within the connectors can be scaled and positioned relative to one another such that a differential signal in a first differential signal pair produces a high field in the gap between the contacts that form the signal pair and a low field near an adjacent signal pair. Consequently, cross talk between adjacent signal contacts can be limited to acceptable levels for the particular application. In such connectors, the level of cross talk between adjacent signal contacts can be limited to the point that the need for (and cost of) shields between adjacent contacts is unnecessary, even in high speed, high signal integrity applications.

A high-frequency switch comprises: a substrate; a main line electrode provided between two terminals; a stub line electrode with one end thereof connected to the side edge of the main line electrode and the other end thereof grounded; and a ground electrode provided adjacent to the stub line electrode in the width direction thereof; wherein the substrate has a semiconductor activation layer which extends to below the stub line electrode and the ground electrode between at least one side edge of the stub line electrode and the ground electrode; and wherein a gate electrode which extends in the longitudinal direction of the stub line electrode is provided on the semiconductor activation layer between the stub line electrode and the ground electrode, thereby forming an FET structure, thus providing a high-frequency switch and electronic device therewith, capable of using high frequencies, having reduced insertion loss, and high signal cut-off capabilities.

A novel integrated circuit incorporating a transmit / receive antenna switch capable of being integrated using silicon based RF CMOS semiconductor processes and a power amplifier on the same substrate. The switch circuit is constructed whereby the substrate (i.e. bulk) terminals of the FETs are left floating thus improving the isolation and reducing the insertion loss of the switch. Floating the substrate of the transistors eliminates most of the losses caused by leakage paths through parasitic capacitances internal to the transistor thus improving the isolation and reducing the insertion loss of the switch. Alternatively, the substrate can be connected to the source or to ground via a resistor of sufficiently high value to effectively float the substrate.

The present invention relates to an electrical space switch matrix having m input ports and n output ports, the switch matrix comprising (m.n) / (i.j) switch blocks, each having i input ports and j output ports, where i is less than m and j is less than n; and a plurality of input elements and a plurality of output elements, the plurality of input elements and plurality of output elements being arranged so as to connect the switch blocks to the input and output ports of the switch matrix. In an embodiment of the invention, the input and output elements can be power splitters and power combiners respectively and are arranged so as to include crossover connection paths therebetween, with the result that crossover of connection paths is distributed between the power dividing / combining function and the switching function.

A high-density orthogonal connector is disclosed and may include electrical contacts that are configured to receive contacts from an orthogonal header connector while minimizing signal skew and signal reflection. The electrical contacts in the connector may define contact pairs (e.g., differential signal pairs). Each contact pair may include a lead portion and a mating interface that extends from the lead portion. The lead portions of the contact pair may define a first plane. One contact of the contact pair defines a first mating interface defining a second plane and the other contact in the contact pair defines a second mating interface defining a third plane. The second plane and the third plane may be both substantially parallel to and offset from the first plane in opposite directions. The contact pair may be configured such that the overall length of each contact within the pair may be substantially the same.

A thin-film piezoelectric resonator including a substrate (6); a piezoelectric layer (2), a piezoelectric resonator stack (12) with a top electrode (10) and bottom electrode (8), and a cavity (4). The piezoelectric resonator stack (12) has a vibration region (40) where the top electrode and bottom electrode overlap in the thickness direction, and the vibration region comprises a first vibration region, second vibration region, and third vibration region. When seen from the thickness direction, the first vibration region is present at the outermost side, the third vibration region is present at the innermost side and does not contact the first vibration region, and the second vibration region is interposed between the first vibration region and third vibration region. The resonance frequency of the primary thickness-longitudinal vibration of the vibration region (40) is f1 at the first vibration region, is f2 at the third vibration region, wherein f1 and f2 satisfy a relationship of f1<f2, and is a value between f1 and f2 at the second vibration region, said value increasing from the outer portion contacting the first vibration region to the inner portion contacting the third vibration region.

Agile frequency converter and method, IF-RF level exchange process, and notch filtering techniques. System noise and spurious levels generated by channel frequency conversion is reduced in applications requiring broadband combining of frequency converters to form multichannel composite signal. Converter employs two-stage frequency conversion process, with gain exchange system using variable pre-mixer gain and variable post-mixer attenuation to maintain constant RF output signal power level. For those few conversion frequencies where distortion component(s) cannot be filtered without degrading desired signal, IF-RF level exchange is optimized for meeting the carrier-to-distortion (C / D) ratio specifications at slight expense of noise level for that channel only, while still meeting aggregate combined carrier-to-noise (C / N) specification requirements. Optimal apportionment of level exchange for each channel depends on specific frequency rejection capability of spurious components and is matched to filtering capability and stored within non-volatile memory of a microcontroller used in the frequency converter.

A dielectrically-loaded loop antenna with a cylindrical dielectric core, a feeder structure passing axially through the core, a sleeve balun encircling one end portion of the core and helical antenna elements extending from a feed connection with the feeder structure at the other end of the core to the rim of the balun. The antenna elements are arranged as a pair of laterally opposed groups of conductive elongate helical elements each having at least first and second conductive elements of different electrical lengths to form a plurality of looped conductive paths. By forming at least one of the conductive elements in each group as a conductive strip with one or both edges meandered, such that the edges of the strip are non-parallel and have different electrical lengths, additional modes of resonance arc created, yielding an improvement in bandwidth.

A high-density orthogonal connector is disclosed and may include electrical contacts that are configured to receive contacts from an orthogonal header connector while minimizing signal skew and signal reflection. The electrical contacts in the connector may define contact pairs (e.g., differential signal pairs). Each contact pair may include a lead portion and a mating interface that extends from the lead portion. The lead portions of the contact pair may define a first plane. One contact of the contact pair defines a first mating interface defining a second plane and the other contact in the contact pair defines a second mating interface defining a third plane. The second plane and the third plane may be both substantially parallel to and offset from the first plane in opposite directions. The contact pair may be configured such that the overall length of each contact within the pair may be substantially the same.

The invention relates to a method for forming a self-aligned transition between a transmission line (1) and a module (2) to be connected to said transmission line (1). The invention equally relates to such a module (2), to such a transmission line (1), to an intermediate element (5) possibly to be positioned between such a module (2) and such a transmission line (1), and finally to a system comprising such a transition. In order to enable a simple and precise connection of a transmission line (1) with some other module (2), it is proposed to use matching solder particles (8) and soldering pads on module (2) and transmission line (1) or intermediate element (5) respectively, and to apply a reflow treatment to the joined elements (1) and (2) or (5) and (2), thereby forming a self-aligning connection. The invention is to be applied particularly to waveguide-to-microstrip transitions.

In various embodiments, a monolithic integrated transmitter, comprising an on-chip laser source and a modulator structure capable of generating advanced modulation format signals based on amplitude and phase modulation are described.

The method includes: receiving a first Non Return to Zero (NRZ) data signal and a synchronous clock signal, and performing Return to Zero (RZ) processing to generate a first complementary RZ data signal pair; receiving a second NRZ data signal and a synchronous clock signal, and performing RZ processing to generate a second complementary RZ data signal pair; and modulating the first complementary RZ data signal pair and the second complementary RZ data signal pair on light to generate an RZ-Differential Quadrature Phase Shift Keying (RZ-DQPSK) optical signal. Through the method and device, RZ processing are performed on the NRZ data signals to generate the complementary RZ data signal pairs, and the complementary RZ data signal pairs are modulated on the light, thereby reducing the cost and the insertion loss of the entire device, lowering the requirements for input optical power and reducing the complexity of loop circuit control.

An isolating circuit for an electrosurgical generator arranged to produce radiofrequency (RF) energy and microwave energy for treating biological tissues is provided. The generator has an RF channel and a microwave channel which are combined at a signal combiner to enable the RF energy and microwave energy to be delivered into tissues along a common feed path. The isolating circuit includes a tunable wavelength isolator at a junction between the microwave channel and the signal combiner, and can include a capacitive structure between a ground conductor of the signal combiner and a conductive input section of the waveguide isolator to inhibit coupling of the RF energy and leakage of the microwave energy. The isolating circuit can combine into a single tunable unit all the necessary components to isolate the microwave and RF channels from one another while providing a high withstanding voltage.

There are provided a transmission / reception switching circuit which is small in insertion loss and harmonic distortion and allows an increase in the output power of a power amplifier and an electronic component for communication on which the transmission / reception switching circuit is mounted. As an element composing a transmission / reception switching circuit in a wireless communication system, series-connected FETs or a multi-gate FET are used in place of a diode. Gate resistors connected between the individual gate terminals and a control terminal are designed to have resistance values which become progressively smaller from the gate to which a highest voltage is applied toward the gate to which a lowest voltage is applied.

A layout of a wireless communication circuit on a printed circuit board (PCB), which is a rectangular board wherein a first side is a Y-axis and a second side is an X-axis. The layout has a first antenna located at a corner between the first side and the second side. An antenna switch and a first filter are located at middle y-coordinate and a X-coordinate. A RF integrated circuit (RFIC) is located after the first filter. A first regulator is located near the second side and higher than the RFIC. A media access control (MAC) is located at about a middle y-coordinate and higher than the first regulator. An oscillator is located at a corner between the second side and the third side. A second regulator is located near the fourth side and above the first regulator. A power amplifier is located near the fourth side above the RFIC. A second filter and a transmitting / receiving (T / R) switch are located before the power amplifier. A second antenna is located at a corner between the first side and the fourth side.

An optical module includes first and second fiber units that hold end portions of first and second optical fibers, and first and second collimators disposed between these fiber units and having first and second lenses, respectively. End faces of the first and second optical fibers are disposed on imaginary circumferences on the end faces of the first and second fiber units. Laser light beams from the end face of the first optical fiber are collimated by the first lens and then focused by the second lens, and enter the end face of the second optical fiber that is disposed diametrically opposite to the first optical fiber with respect to the center axis of the optical module.

A resonator, a filter, and a duplexer are provided which are capable of very effectively suppressing the power loss caused by the edge effect, and which allow a great reduction in the overall size to be achieved. Also, a communication device including the above-mentioned filter or duplexer is provided. A ground electrode is formed over the bottom surface of a dielectric substrate, and a multiple spiral line pattern is formed on the top surface thereof. A radial line pattern is further formed on this surface with an insulation layer interposed therebetween. By thus disposing the radial pattern adjacently to the multiple spiral resonator constituted of the above-mentioned multiple spiral line, an electrostatic capacitance is added to the multiple spiral resonator. This reduces the occupation area of the resonator on the substrate, and improves the loss reduction effect.

An integrated transformer with a stack structure comprises a middle dielectric layer, a bottom dielectric layer, a first winding and a second winding. A portion of the first winding is disposed over a surface of the middle dielectric layer and the remaining portion of the first winding is disposed over a surface of the bottom dielectric layer. A portion of the second winding is disposed over the surface of the middle dielectric layer and the remaining portion of the second winding is disposed over the surface of the bottom dielectric layer. The second winding doesn't intersect with the first winding. The portions of the first and second windings over the surface of the middle dielectric layer connect with the remaining portions of the first and second windings over the surface of the bottom dielectric through via plugs.

A RF device such as a tower mounted amplifier (TMA), mast-head amplifier (MHA), or Tower Mounted Boosters (TMB) includes a housing having a plurality of cavities and an input and an output, the input being coupled to the antenna and the output being coupled to a base station. The housing includes a transmission path holding multiple coaxial resonators. The housing further includes multiple receive paths including at least one path having a plurality of cavities, each cavity containing a dielectric resonator. The metallic transmit resonator nearest the antenna input is coupled to the first dielectric resonator via a common resonant wire. The last dielectric resonator in the receive path is coupled to a first metallic resonator of a downstream clean-up filter via another common resonant wire.

A mezzanine style electrical connector is disclosed. The connector includes first and second arrays of electrical contacts extending through a connector housing. Each contact array may include single ended signal conductors or differential signal pairs or a combination of both. The contact arrays are disposed adjacent to one another such that cross-talk between adjacent signal contacts is limited, even in the absence of any electrical shielding or ground contacts between the contact arrays.

An optical switch enabling optical communications between an input port and an output port of an optical waveguide by minimizing loss error of an optical signal without using a collimator comprised of a separate mediate optical waveguide, lens or the like is provided. The multi-channel optical switch, which changes optical paths, includes four pairs of input optical waveguides and output optical waveguide arranged in parallel to each other, the first pair of input optical waveguide and output optical waveguide facing the second pair of input optical waveguide and output optical waveguide at an angle of 90 degrees, the first input optical waveguide being installed to correspond to the second output optical waveguide, four mirrors installed to enter in optical path directions between the four pairs of input optical waveguides and output optical waveguides, thereby changing the optical paths, and a mirror actuator for selectively operating the entering of the mirror.

A digital step attenuator with thermometer encoded attenuator stages is disclosed. In one embodiment, Embodiments disclosed in the detailed description may include a digital step attenuator, programmable thermometer encoded attenuator stages, the digital step attenuator may include a cascade of programmable thermometer encoded attenuator stages. Each stage may be provided by a programmable impedance array including a plurality of impedances arranged in parallel. The impedance of each of the plurality of each stage may change monotonically by switchably inserting or removing one of the plurality of impedances in the arrays. The control circuit may govern the attenuation level of each of the thermometer encoded accumulator stages as a function of a thermometric codeword, which controls the switches in the arrays.

A multi-wire wire-bonding structure suitable for a high frequency signal comprises a first electronic device, a second electronic device, a chip pad and a plurality of metal wires. The first electronic device is attached to the second electronic device with the chip pad. As a result, the first electronic device and the second electronic device form a stair-like structure. A plurality of bonding pads comprises at least one signal bonding pad and grounded bonding pads. The signal bonding surface is surrounded by the ground bonding pads. All the bonding pads are located at the surface of the first electronic device. The chip pad carries the first electronic device and the exceeding part is a ring grounded bonding pad which surrounds the first electronic device. The second electronic device carries the chip pad and a margin of the second electronic device is exceeding the chip pad. There are several leads on the margin of the second electronic device in corresponding to the ground bonding pads and the signal bonding pad. Metal wires comprise a signal wire and grounding wires. The bonding pads of the first electronic device are classified as the first row bonding pads which is close to the ring ground bonding surface and the second row bonding pads which is away from the ring ground bonding surface. The signal wire electrically connects to the signal bonding pads and the corresponding lead. The ground wires electrically connect to the first row bonding pads and the ring ground bonding surface.

A thin-film bulk acoustic wave (BAW) resonator, such as SBAR or FBAR, for use in RF selectivity filters operating at frequencies of the order of 1 GHz. The BAW resonator comprises a piezoelectric layer (14) having first and second surfaces on opposing sides, a first electrode (16) extending over the first surface, and a second electrode (12) extending over the second surface, the extent of the area of overlap (R1) of the first and second electrodes determining the region of excitation of the fundamental thickness extensional (TE) mode of the resonator. The insertion loss to the resonator is reduced by providing a dielectric material (18) in the same layer as the first electrode (16) and surrounding that electrode. The material constituting the dielectric material (18) has a different mass, typically between 5% and 15%, from the material comprising the first electrode (16) it surrounds. The mass of the dielectric material (18) can be lower or higher than the mass of the first electrode (16). Planarisation of the dielectric material (18) enhances the performance of the device.

A resonator includes a hollow dielectric element having a hole therein, a helical line unit including a plurality of helical lines formed in the hole, and a ground electrode formed on an outer surface of the dielectric element.

An optical coupling arrangement has a first transition region having a plurality of first segmented waveguides and a plurality of transverse segments of alternating indices of refraction with at least some of the transverse segments traversing the first segmented waveguides. The first segmented waveguides are formed by core segments in some of the transverse segments. The arrangement may also have a second transition region having a plurality of second segmented waveguides each aligned with a respective one of the first segmented waveguides. The arrangement is manufactured with a high production yield and is used in an optical coupling device for combining / splitting optical signals to reduce the insertion loss. The optical coupling device is also used in other devices such as Mach-Zehnder devices and arrayed waveguide grating demultiplexers / multiplexers.

A thin film piezoelectric device includes a substrate (12) having via holes (22) and a piezoelectric laminated structure (14) consisting of a lower electrode (15), a piezoelectric film (16), and an upper electrode (17) formed on the substrate (12) via an insulation layer (13). A plurality of thin film piezoelectric resonators (210, 220) are formed for the via holes (22). The piezoelectric laminated structure (14) includes diaphragms (23) located to face the via holes (22) and a support area other than those. The thin film piezoelectric resonators (210, 220) are electrically connected by the lower electrode (15). When the straight line in the substrate plane passing through the centers (1, 2) of the diaphragms (23) of the thin film piezoelectric resonators (210, 220) has the length D1 of the segment passing through the support area and the distance between the centers of the diaphragms of the thin film piezoelectric resonators (210, 220) is D0,the ratio D1 / D0 is 0.1 to 0.5. The via hole (22) is fabricated by the deep graving type reactive ion etching method.

An optical multiplexing device is provided comprising multiple wavelength division multiplexers cascaded together. A first one of the wavelength division multiplexers has a common port and multiple optical ports which are optically coupled to the common port. The common port may be optically coupled to a trunk line of a system employing wavelength division multiplexing, for example, a fiber-optic telecommunication system employing 4, 8, 16 or other number of multiplexed channels. The optical ports include multiple channel ports, each of which is transparent to a corresponding wavelength sub-range and reflective of other wavelengths. The second wavelength division multiplexer has a common port optically coupled to one of the optical ports of the first wavelength division multiplexer. The second wavelength division multiplexer also has multiple optical ports which are optically coupled to its common port and include multiple wavelength-selective channel ports. A waveguide, such as a fiber-optic line, can optically connect the common port of the second wavelength division multiplexer to an optical port of the first wavelength division multiplexer. The cascaded WDMs each may be optically coupled to the output of a passive coupler and a housing may be provided defining an enclosed space in which the optical multiplexing device is mounted. Optionally, additional WDMs may be cascaded with the first two WDMs in a parallel or branched formation, an in-line formation or some combination. Preferably, the channels are interleaved, such that they are removed from the multiplexed signal in certain non-sequential order. The optical multiplexing device also may employ compound interleaving wherein adjacent channels are multiplexed by different ones of the cascaded WDMs. The optical multiplexing devices can operate to add signals, remove signals or a combination of both.

An integrated transformer with a stack structure comprises a middle dielectric layer, a bottom dielectric layer, a first winding and a second winding. A portion of the first winding is disposed over a surface of the middle dielectric layer and the remaining portion of the first winding is disposed over a surface of the bottom dielectric layer. A portion of the second winding is disposed over the surface of the middle dielectric layer and the remaining portion of the second winding is disposed over the surface of the bottom dielectric layer. The second winding doesn't intersect with the first winding. The portions of the first and second windings over the surface of the middle dielectric layer connect with the remaining portions of the first and second windings over the surface of the bottom dielectric through via plugs.

A piezoelectric thin-film filter reduces insertion loss and deterioration of steepness of a shoulder characteristic and reduces the ripple in the passband. In a first vibration portion, a piezoelectric thin film is disposed between a pair of electrodes along one main surface of a substrate. In a second vibration portion, the piezoelectric thin film is disposed between a pair of electrodes along the one main surface of the substrate. The vibration portions are both acoustically isolated from the substrate. In the first resonator, an additional film is disposed outside the electrode constituting half or more the overall length of the perimeter of the first vibration portion that is in contact with the electrode when seen from a thickness direction. In the second resonator, the external shape of the vibration portion when seen from a thickness direction is a polygon, and each side of the polygon is not parallel with any of the other sides thereof.