171 results about "Coupling loss" patented technology

The invention discloses a trigeminal structure spot size converter for a proton exchange waveguide and a preparation method. The trigeminal structure spot size converter sequentially comprises a substrate, an insulating layer and a lithium niobate film layer, the lithium niobate film layer comprises a first waveguide part which is used as an input end of the converter; the second waveguide part is connected with one end of the first waveguide part and is positioned on the same plane as the first waveguide part; a third waveguide portion on the second waveguide portion; the proton exchange waveguide is arranged in the third waveguide part, light is transmitted in the first waveguide part, the second waveguide part, the third waveguide part and the proton exchange waveguide in sequence, and the transverse sizes of the second waveguide part, the third waveguide part and the proton exchange waveguide are sequentially increased in the light transmission direction. The silicon oxynitride waveguide guides light waves in the optical fiber to enter the chip, the light waves in the optical fiber are efficiently guided, the light waves are limited in the silicon oxynitride waveguide and enter the lithium niobate waveguide, and loss caused by light wave diffusion is avoided; a conical waveguide structure is adopted, mode mutation is avoided, and coupling loss is reduced.

The invention discloses a spot-size converter (SSC) and a high-power external cavity laser chip, the external cavity laser chip comprises a wide-ridge gain chip and a passive external cavity chip, one end of the wide-ridge gain chip is plated with a high-reflection film as a reflection end, and the other end of the wide-ridge gain chip is plated with an antireflection film to realize low reflection; and efficient coupling of the fundamental mode of the wide-ridge gain chip with the size far larger than that of the single-transverse-mode waveguide and the small-size single-mode waveguide is realized by integrating the SSC. The SSC converts a large-size mode field and a small-size mode field mutually and effectively reduces optical coupling loss, mode selection and output wavelength adjustability are achieved by adjusting the longitudinal mode phase shifter and the micro-ring filter, part of power is fed back to the wide-ridge gain chip to construct external cavity resonance, and high-power output is achieved. According to the SSC, the device size can be remarkably reduced, a wide-ridge gain chip and an inter-chip hybrid integration process are compatible, and the tuning flexibility, the integration level and the overall stability of the laser are further improved while high-power output is kept.

The invention relates to the technical field of connector regulation and control, and discloses an efficient energy storage connector dynamic regulation and control system based on a nonlinear coupling mechanism. The system comprises an establishment module used for establishing an energy storage connector system model based on a voltage signal and a current signal of an energy storage connector; the disturbance identification module is used for performing nonlinear coupling disturbance identification on the energy transmission process according to the energy storage connector system model to obtain an additional coupling loss component, a dynamic impedance drift component and a phase coupling offset component; the dynamic observation module is used for performing weighted analysis through a nonlinear coupling dynamic observer to obtain a coupling mechanism observation result; and the generation module is used for generating an energy transmission path regulation and control instruction containing the conduction angle compensation amount and the phase synchronization compensation amount based on the coupling mechanism observation result. According to the invention, stable operation can be realized under complex working conditions such as load abrupt change and coupling impedance fluctuation, and the transmission efficiency is maximized.

The invention relates to the technical field of optical fiber connection, and provides an optical fiber connection structure and method, and the structure comprises a first to-be-connected optical fiber (1), a second to-be-connected optical fiber (2), and a hollow connecting pipe (3). The connecting end of the first optical fiber (1) to be connected extends into the hollow part of the hollow connecting pipe (3) from the first end of the hollow connecting pipe (3), and the connecting end of the second optical fiber (2) to be connected extends into the hollow part of the hollow connecting pipe (3) from the second end of the hollow connecting pipe (3); wherein if the light beam output by the connection end of the first to-be-connected optical fiber (1) is matched with the mode field of the connection end of the second to-be-connected optical fiber (2), the connection end of the first to-be-connected optical fiber (1) is in contact with the connection end of the second to-be-connected optical fiber (2); otherwise, an air gap with the length being the preset distance # imgabs0 # exists between the connection end of the first optical fiber to be connected (1) and the connection end of the second optical fiber to be connected (2), and the spot size of the emergent light of the first optical fiber to be connected is matched with the mode field of the second optical fiber to be connected after passing through the air gap with the preset distance # imgabs1 #; by adopting the connection structure and the connection method, the back reflection can be reduced while the coupling loss is reduced.

The invention discloses a segmented slot design method and system of a leaky coaxial cable and a storage medium. The method comprises the following steps: constructing a performance fitting formula of the leaky coaxial cable according to segmented slot state parameters; and calculating the coupling loss of each slotted hole segmented structure on the leaky coaxial cable according to a performance fitting formula and a system loss threshold. And calculating corresponding segmented slot state parameters and transmission attenuation according to the coupling loss of each slot segmented structure. And calculating an expected size parameter of the leaky coaxial cable according to the segmented slotted hole state parameter and the transmission attenuation of each slotted hole segmented structure. According to the leaky coaxial cable, the maximum value and the minimum value of the system loss are limited in a relatively small expected value, so that the system loss curve tends to be in a uniform and horizontal state, and the system loss of the leaky coaxial cable reaches a relatively good state.

The invention discloses a hollow-core fiber fusion coupling loss evaluation method and device, and the method comprises the steps: firstly collecting a cross-section image of a first hollow-core fiber fusion end, enabling laser to pass through the cross-section image, then collecting a light field distribution image of emergent light of the fusion end, and carrying out the fitting, thereby obtaining a nested tube circumcircle and a light field fitting regular polygon; welding the two hollow-core optical fibers, and acquiring a cross-section image of a non-welding end of the second hollow-core optical fiber and a light field distribution image after the laser is introduced to complete the same fitting; and finally, inputting the related geometric parameters before and after welding into a preset evaluation model to obtain welding loss. According to the invention, accurate and real-time evaluation of the welding loss is realized.

The invention discloses a circular optical waveguide amplifier and a preparation method thereof, and belongs to the technical field of polymer optical waveguide amplifiers. The circular optical waveguide amplifier sequentially comprises a silicon substrate (1), a silicon dioxide lower cladding (2), an active polymer core layer (3) doped with rare earth nanoparticles and an upper cladding (4) from bottom to top. The preparation method comprises the steps of growing and cleaning the silicon dioxide lower cladding (2), preparing a core layer solution, preparing the active polymer core layer (3), processing the circular waveguide structure with the bracket, forming the upper cladding (4) and the like. In order to solve the problem of coupling mismatch of a traditional rectangular-section waveguide and a round optical fiber end face, the invention provides a waveguide structure with a round section, so that the overlapping degree of the waveguide with the round section and an optical fiber light field is maximized, effective coupling of an optical fiber mode and a waveguide mode is realized, coupling loss is reduced, and gain is further improved.

A device for connecting RF signal between a first and a second microwave element, the device including coupling interfaces, wherein the device is arranged to facilitate said connection with less than 2 dB coupling loss between said interfaces at a first frequency. The device is a connector arrangement that includes a first and a second layered member structured to be mated with a fixturing member of the device, and said members being isolated by a coupling membrane, wherein the first layered member includes a first mating aperture, arranged to receive the RF signal from the first microwave element via first of the coupling interfaces, and the second layered member includes a second mating aperture, arranged to connect the received RF signal to the second microwave element via second of the coupling interfaces.

The invention discloses a grating coupling device and a preparation method thereof. The grating coupling device comprises a dielectric layer arranged on the surface of a substrate; the functional layer is arranged in the dielectric layer and is provided with a first grating and a waveguide which are adjacent to each other; the second grating is arranged in the dielectric layer and located on the side, away from the surface of the substrate, of the first grating, the grating constant of the second grating corresponds to the grating constant of the first grating, and the second grating is aligned to the first grating; and the material refractive index of the second grating is greater than that of the first grating. The overall coupling efficiency of the device can be obviously improved, and the coupling loss is reduced.

The invention provides a thin-film lithium niobate integrated optical engine for a fiber-optic gyroscope. The thin-film lithium niobate integrated optical engine comprises a substrate, a lower cladding, a lithium niobate thin-film waveguide core layer and an upper cladding, the lithium niobate film waveguide core layer comprises an incident unit, a polarizing unit, a coupling unit, a beam splitting unit, a spot size conversion unit, a phase modulation unit and an emergent unit; the input unit and the polarization unit are gas-phase proton exchange waveguides and naturally have a polarization function; the coupling unit and the beam splitting unit are integrated into a whole, the structure is 2 * 2MMI, and a gas-phase proton exchange process is adopted for preparation; the phase modulation region adopts a lithium niobate film ridge waveguide structure, and coplanar traveling wave electrodes are arranged to realize an electro-optical modulation function; and spot-size conversion structures are additionally arranged between the gas-phase proton exchange waveguide and the ridge waveguide as well as between the ridge waveguide and the output optical fiber, so that mode field matching is realized. According to the embodiment of the invention, the lithium niobate film platform is utilized, and gas-phase proton exchange is combined with a ridge waveguide etching process, so that multiple functions of polarization, coupling, beam splitting, modulation and the like are integrated, the problem of optical coupling loss is solved, and the purposes of miniaturization and low cost of future fiber-optic gyroscopes are achieved.

In an illustrative embodiment, mechanical adhesive and a separate index-matching material are used as underfill between a photonic integrated circuit (PIC) die and an optical interposer. The index-matching material reduces coupling loss between waveguides of the PIC die and waveguides of the optical interposer, while the mechanical adhesive secures the optical interposer in place. The mechanical adhesive can be thermally cured, have a low coefficient of thermal expansion (CTE), have high viscosity, and have a relatively high optical transmission loss. The index-matching material can have low optical transmission loss, be UV cured, have a relatively high CTE, and have low viscosity. The combination of mechanical adhesive and index-matching material can improve ease of manufacture and yield. Additional features are disclosed, such as V-groove arrays in the optical interposer and the PIC die that have low stress and trenches and walls to control flow of the mechanical adhesive and / or index-matching material.

The invention relates to the technical field of image processing, and provides an infrared weak and small target detection method which comprises the following steps: acquiring an infrared image to be detected; and inputting a to-be-detected infrared image into the infrared weak and small target detection model based on YOLOV8 improvement, and obtaining an infrared weak and small target detection result of the to-be-detected infrared image. The infrared weak and small target detection model comprises an improved backbone network based on a channel transposition attention mechanism, a rapid fusion C2f module and a lightweight spatial pyramid pooling module, an improved neck network based on an infrared weak and small target detection module, and an improved detection head network based on an infrared weak and small target detection head and three lightweight detection heads. The infrared weak and small target detection model is obtained based on training of a super-division coupling loss function, and the super-division coupling loss function is calculated and determined according to the low-level features and the high-level features extracted by the backbone network and the super-division coupling network. By using the infrared weak and small target detection model based on YOLOV8 improvement, the precision and efficiency of infrared weak and small target detection are improved.

The invention discloses an all-fiber structure pulse laser based on a superfine single-crystal fiber and a preparation method thereof. The all-fiber structure pulse laser comprises a gain single-crystal fiber and a pulse modulation single-crystal fiber, and the gain single-crystal fiber and the pulse modulation single-crystal fiber form a superfine single-crystal fiber heterogeneous bonding structure through thermocompression bonding; the gain single-crystal optical fiber serves as a laser gain medium, the pulse modulation single-crystal optical fiber serves as a saturable absorber, the gain single-crystal optical fiber is provided with a high-reflection grating, the high-reflection grating and an oblique-angle low-reflection end arranged at the tail end of the pulse modulation single-crystal optical fiber form a resonant cavity, and pump light is input into the gain single-crystal optical fiber and enters the resonant cavity through the high-reflection grating. And the oblique-angle low-reflection end outputs pulse laser. The gain section and the modulation section are fused into an integrated structure through the superfine single crystal optical fiber bonding technology, the high-reflection grating is inscribed through the femtosecond laser direct writing technology, low-reflection-mirror oblique angle processing is carried out at the output end, space coupling loss is eliminated, and all-optical-fiber monolithic integration is achieved.

The embodiment of the invention discloses an end face coupler, a preparation method and a communication system.The end face coupler comprises a substrate, a waveguide structure located on the substrate and a wrapping layer wrapping the waveguide structure, the waveguide structure comprises a gradient refractive index lens, a first waveguide and a second waveguide, the first side of the gradient refractive index lens is used for being connected with an optical fiber, and the second side of the gradient refractive index lens is used for being connected with an optical fiber; the first waveguide is in contact with the second side of the gradient refractive index lens, the first waveguide is in contact with the second waveguide, and the second waveguide is used for being connected with an optical waveguide in the optoelectronic chip. On the basis, the end face of the optical fiber can be connected with the end face of the optical waveguide in the photoelectron chip through the end face coupler, and in the optical signal transmission process, the spot size of an optical signal can be gradually reduced through the gradient refractive index lens, the first waveguide and the second waveguide; the size of the spot size of the optical signal output by the end face coupler can be better matched with the size of the spot size in the optical waveguide, and the coupling loss of the optical signal from the optical fiber to the photoelectron chip is reduced.

The invention discloses an integrated optical chip, a preparation method and an optical gyroscope, the integrated optical chip comprises a first device layer and a second device layer, the first device layer is provided with a phase modulator, the phase modulator comprises a fourth waveguide used for connecting an interference ring, and the second device layer is provided with a detection unit. The detection unit comprises a first coupler and a detector, the first coupler comprises a first waveguide, a second waveguide and a third waveguide, the first waveguide is used for connecting a light source, the first waveguide is connected with the third waveguide, the second waveguide is connected with the third waveguide, and the third waveguide is connected with the phase modulator; the detector is connected with the second waveguide; wherein the second device layer comprises a first sub-device layer and a second sub-device layer, the coupling loss of the first sub-device layer is larger than that of the second sub-device layer, at least part of the detector is located on the first sub-device layer, and the first coupler is located on the second sub-device layer.

The invention discloses an end face coupler and a manufacturing method thereof, the end face coupler comprises a first waveguide, a second waveguide, a third waveguide, a fourth waveguide, a fifth waveguide and a sixth waveguide, when an external optical fiber outputs an optical signal to the first waveguide, the fourth waveguide expands the first waveguide, and the fifth waveguide expands the sixth waveguide; the fifth waveguide and the sixth waveguide evolve optical signals transmitted in the end face coupler in the vertical direction, so that mode fields of the optical signals are gradually distributed in the first waveguide in a concentrated mode and then transmitted to the second waveguide in the transmission direction of the optical signals, the loss of the optical signals transmitted to the second waveguide is reduced, and the transmission efficiency of the optical signals is improved. The fourth waveguide, the fifth waveguide and the sixth waveguide are formed by forming grooves in the lower cladding by adopting an etching process, depositing doped silicon dioxide in the grooves and on the lower cladding and performing chemical mechanical polishing treatment, and the first waveguide, the second waveguide and the third waveguide are formed by etching after deposition; the coupler has the advantages of low coupling loss and simple manufacturing process.

The invention provides a preparation method of a silicon nitride waveguide structure, and the method comprises the following steps: providing a substrate, and forming a silicon nitride waveguide layer on the surface of the substrate; sequentially forming a first silicon oxide layer, a polycrystalline silicon layer and a second silicon oxide layer on the surface of the silicon nitride waveguide layer to form a hard mask layer; performing patterning processing on the hard mask layer to form an etching hard mask; etching the silicon nitride waveguide layer to form a target silicon nitride waveguide structure; and removing the residual etching hard mask. According to the invention, based on the hard masks of the three-layer structure and by optimizing the thickness of each layer of hard mask film, the etching size deviation can be controlled within an extremely small range, the etched waveguide structure is smooth in side wall and good in perpendicularity, and the coupling loss of a silicon nitride end face coupler and the transmission loss of a silicon nitride waveguide can be effectively reduced.

The invention discloses an on-chip active reconfigurable filter passband flatness optimization method and circuit, and belongs to the field of integrated circuits and wireless communication. The filter comprises a coupling element, negative resistance compensation units are connected to the two ends of the coupling element and connected with the coupling element in parallel, and the coupling element comprises a coupling inductor or a coupling capacitor. The invention provides a passband flatness method based on active coupling compensation by deeply analyzing the passband flatness distortion reason of the on-chip coupling filter, and designs a detailed controllable negative resistance unit to compensate the coupling (inductive coupling) loss of the base transformer, thereby greatly reducing the in-band insertion loss variation of the filter, and improving the filter performance. And the amplitude consistency of the signal after passing through the filter is improved.

The application provides an optical coupler applied to the field of optical communication. The optical coupler comprises a buried layer, a support layer, a waveguide layer and an upper cladding layer. In the height direction, the support layer is between the buried layer and the waveguide layer. The waveguide layer is between the support layer and the upper cladding layer. In the width direction, the waveguide layer and the support layer are inside the upper cladding layer. The materials of the waveguide layer and the support layer are different. In the application, the support layer is inside the upper cladding layer. Therefore, the upper cladding layer is on both sides of the support layer. The energy of the optical signal can be dispersed on both sides of the support layer, so that the degree of uneven energy distribution near the center of the waveguide layer is reduced, and the coupling loss of the optical coupler is reduced.

The present invention relates to the technical field of optical communication. Disclosed are a coupling method and coupling structure for a hollow optical fiber, and an optical fiber connector. The method of the present invention comprises the steps of: welding a first optical fiber with a first end surface of a bridge fiber, processing a second end surface of the bridge fiber into an inclined surface at a preset angle to serve as a coupling end surface, and fixing the overall structure obtained by welding the first optical fiber with the bridge fiber in a first sleeve to obtain a first intermediate; fixing the hollow optical fiber in a second sleeve to obtain a second intermediate; and clamping and fixing the first intermediate and the second intermediate by using an optical fiber coupling platform, adjusting the position of the first intermediate and / or the second intermediate, synchronously performing a powder test, and encapsulating and fixing coupling points when the coupling loss is at the minimum, thereby achieving the coupling of the hollow optical fiber and the first optical fiber. The present invention expands the application scenarios, and reduces the coupling loss and return loss.

The invention provides an evanescent wave coupling structure, a silicon-based semiconductor laser and a laser device.The evanescent wave coupling structure comprises a lower cladding layer, an active layer, a dielectric layer and a ridge waveguide layer, the lower cladding layer is formed below the active layer, so that light in the active layer can be limited by the lower cladding layer and can only be reflected upwards, and the light is coupled and transmitted into the dielectric layer through evanescent waves; and the light is transmitted to the ridge waveguide layer from the dielectric layer through evanescent wave coupling, and the light is output outwards by the ridge waveguide layer. According to the invention, the active layer is arranged to be in a structural form of which the width gradually changes from large to small, so that the light in the active layer is gradually restrained in a smaller area range in a transmission process, thereby improving the coupling efficiency of the light in a coupling process in a vertical direction, and reducing the optical coupling loss. According to the invention, the problems of low coupling efficiency, weak expandability, high process difficulty and the like of the silicon-based waveguide directly coupled with the III-V epitaxial material waveguide are solved.

The invention belongs to the technical field of terahertz, relates to terahertz communication, and particularly discloses a quasi-optical resonant cavity and a terahertz pulse compression system. According to the invention, the pulse generation module and the coupling compensation module are connected in parallel and are connected to the common reflector through the common coupler, so that function decoupling is realized. In a pulse compression stage, the common coupler introduces an incident terahertz wave beam into two optical paths, and destructive interference occurs between two paths of leakage signals by adjusting the coupling compensation module, so that zero coupling loss is realized, and the problem of large energy loss is solved. Meanwhile, the pulse generation module can independently adjust the optical path of the pulse generation module to control the pulse width, and the adjustment process does not affect the optimized interference condition, so that the high robustness of adjustment is ensured. In the output stage, energy is released by switching the state of the common coupler. Compared with the prior art, low-loss accumulation and robust pulse width continuous adjustment are realized at the same time, so that the terahertz pulse compression effect is remarkably improved.

The invention relates to a silicon nitride waveguide and gallium nitride visible light source coupling structure based on a metasurface, and belongs to the technical field of optoelectronic integration. The structure comprises a silicon substrate, a silicon dioxide cladding, a silicon nitride waveguide layer / metasurface structure, a BCB bonding layer, a P-type gallium nitride layer, a gallium nitride multi-quantum well layer, an N-type gallium nitride layer and a P / N-type electrode from bottom to top. The size of the silicon nitride waveguide is designed to be matched with the visible light single-mode transmission condition and the gallium nitride light-emitting wavelength range, the periodic metasurface structure is etched and prepared on the silicon nitride waveguide layer to regulate and control the amplitude, phase and polarization of the gallium nitride visible light, and high-efficiency coupling of the visible light and the silicon nitride waveguide is achieved. And meanwhile, integration of two different material systems is realized through the BCB bonding layer. The design can effectively realize the integration of the visible light source of the silicon nitride photonic integrated chip, solves the problems that the coupling loss of the silicon nitride waveguide and the visible light laser is large, the alignment precision requirement is high and the like, and provides a light source implementation scheme for chip-level biomedical detection and spectral analysis.

The invention relates to the technical field of capacitor testing, in particular to a full-working-condition equivalent testing system and method for a capacitor for direct-current power transmission. The method comprises the following steps: applying a single-frequency AC component to a capacitor, and obtaining an inherent single-frequency loss baseline of the capacitor under single-frequency excitation; determining harmonic coupling loss according to the single-frequency loss baseline; strong interaction harmonic pairs are screened out according to harmonic coupling loss, and additional loss is measured again under the condition that controlled thermal gradient disturbance and mechanical resonance excitation are applied to calibrate a thermal field gain factor and a mechanical vibration gain factor; and based on the thermal field gain factor and the mechanical vibration gain factor, evaluating the total loss of the full-working-condition test to obtain full-working-condition test data. According to the method, accurate evaluation and contribution degree decomposition of the loss characteristics of the capacitor under the multi-physical-field full working condition are realized.

The invention relates to the technical field of coupling device design and manufacturing, in particular to an interlayer coupler with a multi-layer waveguide structure and a manufacturing method of the interlayer coupler. The interlayer coupler comprises at least three layers of stacked waveguide structures, the lowermost waveguide structure is a silicon waveguide, and the refractive indexes of the waveguide structures are gradually reduced from bottom to top. The refractive index of each layer of waveguide structure which is arranged in a laminated manner is set to be gradually reduced, so that optical signals can be more stably transited when being transmitted among different waveguide layers, the reflection and scattering phenomena caused by sudden change of the refractive index are effectively avoided, optical loss caused by sudden change of the refractive index is greatly reduced, and the optical transmission efficiency is improved. The coupling loss of the interlayer coupler is significantly reduced, and the optical transmission efficiency of the interlayer coupler is greatly improved. And the mode field matching degree can be effectively improved, the problem of mode field mismatching is solved, and the coupling loss of the light field is further reduced.

The utility model relates to a lithium niobate end face coupler, including substrate: the lower cladding layer, covering layer are sequentially equipped from below to above on the substrate, the upper end of lower cladding layer is sequentially equipped with first flat plate structure and first waveguide structure from below to above, and first waveguide structure is located the upside of bottom layer first flat plate structure, and first flat plate structure and first waveguide structure are located in covering layer, and first flat plate structure includes first flat plate layer and the second waveguide structure located the upside of first flat plate layer, wherein, the thickness of first flat plate layer is 1nm 30nm, and the thickness of first flat plate layer is less than the thickness of second waveguide structure, the utility model discloses a lithium niobate end face coupler adds first flat plate layer, significantly reduces the coupling loss of thin film lithium niobate end face coupler, is favorable to the mass production of lithium niobate end face coupler.

The application relates to the technical field of laser lighting, in particular to a non-electric manual laser switch and a using method thereof, and aims to solve the problems of poor explosion-proof performance, high laser leakage risk, large coupling loss and stray light interference of an existing laser switch. The switch is connected in series between a light fiber at a light emitting end of a laser and a light fiber at a receiving end of a lighting system, and comprises a manual operating mechanism, a double-lens assembly, a high-precision positioning pin, a light cone assembly, a stray light protection piece and a shell. The switch realizes light path on-off through pure mechanical manual operation. When the switch is turned on, the double lens is accurately aligned through the positioning pin, and laser is coupled and transmitted with low loss. When the switch is turned off, the light cone absorbs laser on the laser side, and the stray light protection piece blocks external stray light. The switch does not have any electrical components, meets the Exd IIC T6 explosion-proof grade, has a coupling loss of less than or equal to 0.2 dB, has laser leakage of less than or equal to 0.01 mW when turned off, is suitable for environments of-40 DEG C to 85 DEG C, and is suitable for explosion-proof scenes such as natural gas pipe corridors and chemical industrial parks. The switch is convenient to operate and has a long service life.

This invention belongs to the field of optical component mounting technology, specifically a real-time coaxial optical coupling loss detection and alignment system for prisms and lens arrays. It includes an automatic loading and unloading module for automatically loading the substrate, prisms, and lens arrays, and automatically sorting and unloading qualified and unqualified products. By adopting a technical solution that uses the real-time coaxial optical coupling loss detection value as the sole criterion for final alignment of the lens array, combined with a graded alignment strategy of visual coarse alignment and coaxial optical fine alignment, it solves the common industry pain point of existing pure visual alignment and passive alignment technologies that separate physical dimensional accuracy from optical performance. This results in the inability to compensate for manufacturing errors such as uneven refractive index and surface flatness deviations within optical components, leading to substandard optical performance despite meeting physical accuracy standards and low yield rates in mass production. By using dimensional and angular tolerances only as auxiliary constraints, it directly locks the global minimum coupling loss point, improving the consistency and stability of the product's optical performance.

An optoelectronic chip and a communication device, relating to the technical field of optoelectronic chips. The optoelectronic chip comprises a substrate, a laser device and an optical device, the substrate being provided with an optical conduction part and an accommodation cavity which are adjacent to each other. The optical conduction part is internally provided with a first waveguide, the first waveguide comprising at least two sub-waveguides which are arranged at intervals in a first direction, the projections of any two adjacent sub-waveguides among the at least two sub-waveguides in the first direction overlapping, and the interval of any two adjacent sub-waveguides being within a preset range. The laser device is arranged in the accommodation cavity, and the laser device is in coupling connection to one of the first waveguides. The laser device, the optical conduction part and the optical device are sequentially arranged, and the optical device is in coupling connection to the other one of the first waveguides. By providing the first waveguide, the present application uses the coupling design of the plurality of sub-waveguides to change the height position of a laser on different waveguides, thereby achieving alignment of laser devices of different laser emission heights and waveguides, and improving the degree of coupling and lowering coupling loss.

The invention discloses a silicon-based terahertz quintuple frequency multiplier based on a semi-closed coupling structure, comprising an input balun, a fourth harmonic frequency multiplication unit, an interstage transformer, a single-balanced mixer unit and an output balun. A single-ended fundamental wave signal is converted into a differential signal by the input balun and injected into the frequency multiplication unit. At the same time, a differential signal is split from the differential port of the input balun as the local oscillator of the mixer unit. The frequency multiplication unit generates a fourth harmonic and injects it into the source end of the mixer unit in a single-ended mode as an intermediate frequency signal. The mixer unit mixes the fundamental wave and the fourth harmonic to generate a five-fold frequency differential signal, and the output balun converts the differential signal into a single-ended output. Both the input balun and the output balun adopt a semi-closed coupling structure to reduce the coupling loss of passive devices. The structure has the characteristics of strong coupling and high design freedom, solves the problem of large loss of the passive coupling structure of the silicon-based millimeter-wave terahertz circuit, and improves the output power of the terahertz frequency multiplier.