A high-power, tunable and narrow linewidth
external cavity semiconductor laser belongs to the technical field of a
semiconductor laser and aims to solve the problem that the comprehensive requirements such as mode characteristic, beam quality, linewidth, coherence and tunability of a single
laser are difficult to be met. The high-power, tunable and narrow linewidth
external cavity semiconductor laser is formed by directly
coupling a
gain chip, a tunable
external cavity and an inclined power
amplifier with a curved
waveguide through an end surface, wherein the
gain chip is used for achieving laser output of single-mode wide spectrum; the tunable external cavity adopts a
silicon on insulator (SOI) material; the linewidth is narrowed by increasing cavity length and a quality factor Q of a laser
resonant cavity; the tunability is achieved by the adoption of
refractive index of a
thermal modulation material; and by the arrangement of the inclined power
amplifier with curved
waveguide, laser output with high power and high beam quality is achieved under ensuring the stability of the
gain chip and the tunable external cavity. By the high-power, tunable and narrow linewidth external cavity semiconductor laser, a novel semiconductor laser integrating a single mode, high power, high beam quality, narrow linewidth, high coherence, tunable
wavelength and the like is achieved, and the high-power, tunable and narrow linewidth external cavity semiconductor laser has important application prospect in the fields such as space laser communication and laser
radar.