The invention provides a mid-
infrared high-speed
waveguide type modulator capable of being integrated on a
chip and a design method, and belongs to the technical field of
semiconductor optoelectronic devices, aiming at solving the problem that an existing mid-
infrared modulator cannot consider high speed, low loss and on-
chip integration compatibility at the same time. The modulator comprises an InP substrate, an epitaxial structure growing on the InP substrate and a traveling wave
electrode structure prepared on the epitaxial structure. The epitaxial structure sequentially comprises an InP
contact layer, an InAlAs lower light limiting layer, an InP / InGaAs lower
waveguide layer, an asymmetric multi-
quantum well structure, an InP / InGaAs upper
waveguide layer, an InAlAs upper light limiting layer and a Cap layer from bottom to top. The design method comprises the steps of selecting a compatible
material system, designing an asymmetric multi-
quantum well structure,
processing an epitaxial structure into a
ridge waveguide structure, designing a traveling wave
electrode and carrying out device characterization testing. The method is suitable for design and preparation of the middle-
infrared band high-speed
light modulation device.