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226 results about "Ellipsometry" patented technology
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Ellipsometry is an optical technique for investigating the dielectric properties (complex refractive index or dielectric function) of thin films. Ellipsometry measures the change of polarization upon reflection or transmission and compares it to a model.
High photon energy range reflected light characterization of solids
InactiveUS6414302B1Polarisation-affecting propertiesPhotoelectric discharge tubesMetrologyIdentifiability
Accuracy and sensitivity in the optical characterization of solids and solid materials are improved through the use of the interdependent features of: extending the photon energy range over which the metrology is performed to include a portion of the range up through 10 eV, in which, the higher photon energy of the light improves signal distinguishing ability; and providing a controlled ambient in the entire light path between the light source and a detector that prevents absorption and signal definiteness masking so as to sharpen the identifiability of the change parameters imparted into the reflected light. Combinations of specific devices and materials that for different types of ellipsometry are provided.
Owner:JORDAN VALLEY SEMICON
Ellipsometry methods and apparatus using solid immersion tunneling
InactiveUS6934024B2Accurate measurementFacilitates optical tunnelingPolarisation-affecting propertiesLight polarisation measurementRefractive indexPrism
A solid immersion tunneling ellipsometer and methods relating thereto may include a solid immersion apparatus (e.g., a prism or an objective lens in combination with a solid immersion lens) that facilitates optical tunneling and provide information that can be used in the determination of one or more characteristics (e.g., thickness, index of refraction, etc.) of samples (e.g., thin films, ultrathin films, etc.).
Owner:RGT UNIV OF MINNESOTA
Film thickness monitor
ActiveUS20130155390A1Easy access to dataEasy to controlMaterial analysis by optical meansUsing optical meansPhotovoltaic detectorsPhotodetector
A measurement unit comprising a light source and a photodetector may be formed in a cavity in a substrate. The light source produces light that impinges a material layer and is reflected back to the photodetector. Through methods such as interferometry and ellipsometry, the thickness of the material layer may be calculated from the light intensity data measured by the photodetector. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
Owner:KLA TENCOR TECH CORP
Ultrathin layer measurement having a controlled ambient of light path
InactiveUS6222199B1Polarisation-affecting propertiesInvestigating moving sheetsMetrologyFrequency spectrum
Metrology for ultrathin dielectric layers of the order of less than 10 nanometers in thickness is achieved by specular ellipsometry in a totally controlled ambient between the light source and the detector, in which, a precise 2.75 through 9.0 eV photon energy range continuum of light is employed. In the signal analysis there is the taking into consideration the effect of noise in the development of the ellipsometric parameter values and in the resulting data. In the invention the precise photon energy range operates to sharpen the identifiability of the change parameters imparted into the reflected light in the ellipsometry while minimizing absorption and signal definiteness masking; and the taking into consideration of noise in the signal analysis involves providing a simulated noise spectrum for comparison with the least squares fitting algorithm-derived parameters to determine the quality of the minimum and the reliability of the inferred parameters.
Owner:JORDAN VALLEY SEMICON
Material composition analysis system and method
InactiveUS7358494B1Accurately determine phaseEfficiently and accurately determineX-ray spectral distribution measurementMaterial analysis using wave/particle radiationElemental compositionMetrology
The material composition of a thin film formed on a substrate or covered by a cap layer that shares one or more elements with the thin film can be determined by combining characteristic material data, such as characteristic x-ray data, from a material composition analysis tool, such as an electron probe-based x-ray metrology (EPMA) operation, with thickness data and (optionally) possible material phases for the thin film. The thickness data and / or the material phase options can be used to determine, for example, the penetration depth of a probe e-beam of the EPMA tool. Based on the penetration depth and the thin film thickness, the characteristic x-ray data from the EPMA operation can be analyzed to determine the composition (e.g., phase or elemental composition) of the thin film. An EPMA tool can include ellipsometry capabilities for all-in-one thickness and composition determination.
Owner:KLA TENCOR TECH CORP
Complementary waveplate rotating compensator ellipsometer
ActiveUS7889339B1Easy to operateMaterial analysis by optical meansLight polarisation measurementEllipseUltraviolet
Ellipsometry using two waveplates of complementary retardation in a dual rotating compensator configuration is disclosed. Two waveplates of complementary retardation may be used to increase the useful spectral range of a rotating compensator ellipsometer, in particular towards the deep Ultraviolet (UV) spectrum. The improved rotating compensating ellipsometer disclosed herein enables a user to select specific and different waveplate retardations for the purpose of increasing the operating wavelength range of the rotating compensating ellipsometer.
Owner:KLA TENCOR TECH CORP
Method for calibrating ellipsometer with phase compensator
InactiveCN102878940ASimplify the calibration processAccurate CalibrationPolarisation-affecting propertiesUsing optical meansMeasuring instrumentPolarizer
The invention discloses a method for calibrating a polarization angle of an ellipsometer with a phase compensator in an ellipsometry system, a phase delay angle of the phase compensator and a light incidence angle of the ellipsometer, and belongs to the technical field of optical measuring instruments. The method is characterized in that correction values of working parameters of the ellipsometer with the phase compensator are obtained by fitting via a least square method according to experimental Fourier coefficients, optical constants and a deduced relational expression among theoretical Fourier coefficients and the working parameters of the ellipsometer. By the method, system parameters including polarization directions of a polarizer and a polarization analyzer, the delay angle of the phase compensator and the light incidence angle of the ellipsometer with the phase compensator can be calibrated, a calibrating process is simple and accurate, the ellipsometer can be directly used for measuring without adjusting components of the system after calibration is completed, accordingly, a measuring process is simplified, and measurement precision is improved.
Owner:INST OF MICROELECTRONICS CHINESE ACAD OF SCI +1
Imaging ellipsometer based on magneto-optical effect
InactiveCN101852591AImprove measurement stabilityFast measurement speedSurface/boundary effectPhase-affecting property measurementsPolarizerNanometre
The invention discloses an imaging ellipsometer based on magneto-optical effect, which relates to a film thickness measurement method and a device, particularly to a method and a device for observing the thickness distribution of a nano film on the surface of a sample. The ellipsometer is characterized in that a polarizer, a compensator and an analyzer capable of rotating in the direction of a transmission axis are adopted to correct a system, a magneto-optical modulation technology is adopted to change the polarization direction of the received light, a plane array detector is adopted to record the ellipsometry images of the film on the surface of the sample, iterative algorithm is adopted to process the data, and the shape parameters of the film on the surface of the sample are precisely measured. The imaging ellipsometer based on magneto-optical effect solves the defects of the prior art, improves the precision in detecting the polarization of the received light, and improves the measurement speed.
Owner:TSINGHUA UNIV
Concurrent measurement and cleaning of thin films on silicon-on-insulator (SOI)
InactiveUS7006222B2Accurate measurementHigh measurement accuracyScattering properties measurementsUsing optical meansBeam sourceLight beam
A system for performing single wavelength ellipsometry (SWE) on a thin film on a multi-layer substrate such as silicon-on-insulator (SOI) applies a measurement beam having an absorption distance less than the thickness of the superficial layer of the multi-layer substrate. For example, for an SOI substrate, the measurement beam is selected to have a wavelength that results in an absorption distance that is less than the superficial silicon layer thickness. The system can include a cleaning laser to provide concurrent cleaning to enhance measurement accuracy without negatively impacting throughput. The measurement beam source can be configured to provide a measurement beam at one wavelength and a cleaning beam at a longer wavelength, so that the absorption depth of the measurement beam is less than the superficial layer thickness while the absorption depth of the cleaning beam is greater than the superficial layer thickness.
Owner:KLA TENCOR TECH CORP
System and method for nonlinear optical null ellipsometry
InactiveUS7336359B1Bioreactor/fermenter combinationsBiological substance pretreatmentsComputational physicsNonlinear optical
Nonlinear optical null ellipsometry is disclosed as a method to evaluate second-order nonlinearities on and off resonance in thin surface films and bulk materials.
Owner:PURDUE RES FOUND INC
Ellipsometer and Ellipsometry
InactiveUS20070268490A1Improve reliabilityPolarisation-affecting propertiesPolarising elementsPolarizerOptical polarization
A small and high-speed polarization analysis device and ellipsometer having no driving section are provided by overlapping one polarizer array rendered by arranging a plurality of polarizer regions of mutually different optical axis directions in the form of stripes and one wavelength plate array rendered by arranging a plurality of wavelength plate regions of fixed retardation and mutually different optical axis directions in the form of stripes so that the respective stripes of the plurality of polarizer regions and of the plurality of wavelength plate regions intersect one another and by disposing a light-receiving element array so that the intensities of light that has passed through the matrix-like intersection parts can be individually measured. As a method of analyzing a two-dimensional intensity distribution pattern that is observed by the light-receiving element array of the polarization analysis device, either one of (or both of) the algorithms of a method that determines incident polarized waves by mathematically fitting pattern shapes or performing database matching or a method that performs a Fourier transform on pattern shapes and determines incident polarized waves from the frequency components is (are) used. Furthermore, if necessary, more accurate polarization analysis is also possible by adopting a signal processing method that removes signals from light-receiving element regions that receive unnecessary scattered light and diffracted light.
Owner:PHOTONIC LATTICE +1
System for performing ellipsometry using an auxiliary pump beam to reduce effective measurement spot size
InactiveUS6952261B2Effectively smallPolarisation-affecting propertiesOptically investigating flaws/contaminationLight beamPolarizer
An ellipsometer includes a light source for generating a probe beam of polychromatic light for interacting with a sample. The probe beam is passed through a first polarizer that imparts a known polarization state to the probe beam. The polarized probe beam is then directed to reflect from the sample. A second illumination source is switched on and off at a predetermined frequency to create an intensity modulated pump beam (the beam may also be chopped). The pump beam is directed normally against the subject producing a small illumination spot within the area illuminated by the probe beam. The pump induces localized changes in the dielectric properties of the subject. The pump-beam induced oscillations are picked up by the portion of the probe beam that is reflected from within the illumination spot of the pump beam. By analyzing only the portion of the reflected probe beam that includes the pump beam induced oscillation, the size of the measurement spot is effectively limited to the illumination spot size of the normally directed pump beam.
Owner:THERMA WAVE INC
Method for measuring optical constants of thin film with non-uniform refractive index
InactiveCN102980748AMake the most of intuitiveHigh precisionTesting optical propertiesRefractive indexLuminosity
The invention relates to a method for measuring optical constants of a thin film with a non-uniform refractive index. The method comprises the following steps: perfomring spectral measurement on transmissivity and reflectivity of the thin film to obtain spectral measurement data; performing variable-angle ellipsometry on the thin film to obtain ellipsometric parameters; and fitting the spectral data and the ellipsometric parameters, matching with a corresponding dispersion relation, and working out the optical constants of the thin film by using a non-uniform model. On the basis of separate use of the photometry and the ellipsometry, respective advantages of the photometry and the ellipsometry are flexibly taken, high sensitivity of measuring optical parameters of a film layer by the ellipsometry and intuition of measuring data by the photometry are fully played, and the photometry and the ellipsometry are combined with each other to obtain high-precision analytical data of the optical constants, so that the reliance of the photometry on the thickness of the thin film is improved and the difficulty for model calculation by the ellipsometry is reduced.
Owner:CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Spectrum magneto-optical ellipsometry analysis device of rotary compensator as well as application thereof
ActiveCN110333191AWide spectral rangeQuick analysisPolarisation-affecting propertiesUsing optical meansPolarizerMotor control
The invention discloses a spectrum magneto-optical ellipsometry analysis device of a rotary compensator as well as application thereof. The spectrum magneto-optical ellipsometry analysis device comprises a light source module, a light path module, a magnetic field module, a sample table, a motor control module and a detection and analysis module, the light path module comprises a collimating lens,a polarizer, a compensator and a polarization analyzer, the detection and analysis module comprises a computer and a detector, the collimating lens, the polarizer, the compensator, the sample table,the polarization analyzer and the detector are sequentially arranged along a light path direction, the polarizer and the compensator are located in an incidence light path, the polarization analyzer is located in an emergence light path, and the incidence light path and the emergence light path are located at the two sides of the sample table and respectively keep an included angle Phi with normalof the sample table. The device disclosed by the invention can represent optical and magnetic parameters of a magnetic film material under longitudinal or poloidal magneto-optical Kerr effect, can obtain thickness, optical parameters and magnetic parameters of a magnetic film sample during one test and is relatively high in automation degree.
Owner:SHANDONG UNIV
Complete system identification of film-substrate systems using single-angle-of-incidence ellipsometry: A fast genetic algorithm
InactiveUS20070024850A1Reduce in quantityThe result is accurateMaterial analysis by optical meansLight polarisation measurementAngle of incidenceFast optimization
A method to dynamically and completely identify in real-time a transparent-film absorbing-substrate system: determine the film thickness and optical constant and the substrate optical constant, using any ellipsometer to measure only one pair of the two ellipsometric angles psi and del at only one angle of incidence and at only one wavelength, and a fast optimized genetic algorithm which employs a fitness function based on a physical condition along with an optimization method are provided. With proper modification the provided optimized genetic algorithm, and the provided optimization method, are used to fully characterize absorbing-film absorbing-substrate systems, to fully characterize a pellicle which is an unsupported film, to fully characterize a bare substrate, to fully characterize multiple-film-substrate systems, and to design single- and multiple-film-substrate systems. A software program and / or a smart device to be a part of any ellipsometer or ellipsometer system, or to be added to any existing ellipsometer or ellipsometer system, are also provided. All equally apply to reflection and transmission modes of operation.
Owner:ZAGHLOUL ARM +1
Method and device for measuring nano film
ActiveCN103743349AAccurate measurementSimplify complexityUsing optical meansTesting optical propertiesReflectivity measurementTransmittance
The invention discloses a method and a device for measuring a nano film. The method for measuring the nano film comprises the following steps of acquiring a transmittance measurement value or a reflectivity measurement value of the nano film; acquiring ellipsometry parameters of the nano film; estimating the thickness of the nano film, obtaining a pseudo optical constant of the nano film according to the ellipsometry parameter and the estimated thickness; obtaining a transmittance calculation value or a reflectivity calculation value of the nano film according to the estimated thickness and the pseudo optical constant; executing the error comparison for the transmittance measurement value or the reflectivity measurement value with the transmittance calculation value or the reflectivity calculation value, and utilizing the estimated thickness and the pseudo optical constant corresponding to the minimal error value as the thickness and optical constant of the nano film. By adopting the transmittance or reflectivity and the ellipsometry method to assist the analysis, the pseudo optical constant is introduced, and the data is processed by adopting a fitting algorithm and an iteration algorithm, so that the optical constant and thickness of a film sample can be precisely measured.
Owner:UNIV OF SCI & TECH OF CHINA
Large-area high-resolution wide-field online measurement device and measurement method thereof
ActiveCN106517086AHigh resolutionIncrease the areaNanostructure testingMeasurement deviceElliptically polarized light
The invention discloses a large-area high-resolution wide-field online measurement device and a measurement method for nanostructure films. Light emitted by a light source is converted into a single-wavelength light beam through a wavelength selector, and the single-wavelength light beam is converted into an elliptic polarized beam which is then projected to a to-be-measured nanostructure film. A film reflection beam passes through an imaging unit and a polarization state analysis unit to enter an area array detector to obtain imaging spectrum ellipsometry measurement data of the to-be-measured nanostructure film. The data are matched with theoretical values and extracted to obtain parameter values of the to-be-measured nanostructure film at corresponding pixels, and the extracted parameter values form three-dimensional micrograph morphology of the to-be-measured nanostructure film. The problem that an existing device is small in focal depth value of an instrument and difficult to realize wide-field clear imaging and high-transverse-resolution measurement at the same time is solved, and large-area high-resolution accurate measurement of the nanostructure film is truly realized.
Owner:WUHAN EOPTICS TECH CO LTD
Self-calibrating beam profile ellipsometer
InactiveUS7054006B2Material analysis by optical meansLight polarisation measurementHarmonic analysisLight beam
A real-time calibration method for beam profile ellipsometry systems includes projecting an electromagnetic probe beam having a known polarization state though an objective lens onto the surface of a subject and collecting the reflected probe beam using the same objective. The reflected probe beam is then passed through a rotating compensator and analyzer before being received by a detector. A processor performs a harmonic analysis on the detector output to determine normalized Fourier coefficients. The processor uses Fourier coefficients to measure the retardation δB and the azimuth angle QB of the objective lens; and uses the retardation δB and the azimuth angle QB to identify the ellipsometric effects of the objective lens.
Owner:THERMA WAVE INC
Method and device for improving precision of measuring ultra-thin film layer by ellipsometer
ActiveCN106403830AImprove test accuracySimplify the solution processUsing optical meansTesting optical propertiesMicrometer scaleLight beam
The invention provides a device for improving precision of measuring an ultra-thin film layer by an ellipsometer. The device comprises a right-angle prism, a plano-convex spherical lens, the ultra-thin film layer and a glass substrate. According to the method and the device, an Otto structure is introduced into the ellipsometer for exciting surface plasma resonance, a curve of elliptical polarization parameters changing along with incident wavelength, incident angle and air gap thickness is tested and analyzed by utilizing micrometer-scale light beams, a thickness of an optical constant of the ultra-thin film layer are obtained through fitting the elliptical polarization parameter curve; and the surface plasma resonance is very sensitive to the optical constant of the film layer, Psi and Delta can be obtained simultaneously by adopting the ellipsometry, and the elliptical polarization test precision can be improved by combining the Psi with the Delta.
Owner:SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Driverless ellipsometer and ellipsometry
InactiveUS7411677B2Improve reliabilityPolarisation-affecting propertiesLight polarisation measurementOptical axisEllipse
Owner:PHOTONIC LATTICE +1
A measuring device and a measuring method for the thickness and the optical constants of ultrathin film
InactiveCN107504907AWon't breakWith online real-time non-contact measurementMaterial analysis by optical meansUsing optical meansPlasma resonanceMeasurement precision
The invention provides a measuring device and a measuring method for the thickness and the optical constants of ultrathin film. The method comprises the steps of collecting plasma resonance images under different polarizing angles and analyzing angles, performing analysis to obtain an ellipsometry parameter curve of plasma resonance guide and performing fitting of the ellipsometry parameter curve, and using an optical solution as a measurement result to obtain the thickness and optical constants of ultrathin film. The measuring device and the measuring method have the advantages of online real-time non-contact measurement and high measurement accuracy and cause no damage to the surfaces of to-be-measured samples.
Owner:SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Method of measuring porosity by means of ellipsometry and device for implementing one such method
InactiveUS7568379B2Good precisionSemiconductor/solid-state device testing/measurementSemiconductor/solid-state device manufacturingPorosityRelative pressure
Owner:COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
One-fourth double-wave-plate phase retarder
ActiveCN103424797AAdapt to wideband application requirementsBreak through the limitations of using different materialsPolarising elementsPhase retardationOptical axis
The invention discloses a one-fourth double-wave-plate phase retarder which is capable of realizing achromatic aberration. The one-fourth double-wave-plate phase retarder is characterized in that the double-wave-plate phase retarder is composed of two one-fourth zero-level wave plates made of same materials or different materials, the zero-level wave plates are parallelly arranged along optical axes, an included angle formed by the optical axes is 45 degrees, and central wavelengths of the one-fourth zero-level wave plates are within a waveband range and meet the condition that the maximum value of difference values between phase retardation quantity delta e (lambda), corresponding to each wavelength point within the waveband range, of a double-wave plate formed by the zero-level wave plates and an ideal phase retardation quantity value pi / 2. Compared with existing double-wave-plate phase retarders, the one-fourth double-wave-plate phase retarder has the advantages that the optical axes of the zero-level wave plates are combined according to 45 degrees instead of 90 degrees, so that the acquired double-wave-plate phase retarder has better characteristics like achromatic aberration within full-wave band and can meet using requirements of wide-spectrum optical systems in spectrum ellipsometry and the like.
Owner:HUAZHONG UNIV OF SCI & TECH
Calibration method of quartz crystal microbalance
ActiveCN101750140AHigh sensitivityImprove accuracyWeighing apparatus testing/calibrationQuartz crystal microbalanceTest procedures
The invention relates to a calibration method of a quartz crystal microbalance, belonging to the technical field of aeronautics and astronautics. The method comprises depositing heavy metal gold at the surface of the quartz crystal microbalance by using a magnetron sputtering device; injecting an inert gas in a vacuum system; observing and recording the vacuum degree of a vacuum chamber; monitoring and storing the frequency value and the temperature value of the quartz crystal microbalance; monitoring and storing the S polarized light current and P polarized light current of ellipsometry system, and finally closing the testing system, closing the gas charging system of inert gas, and closing the vacuum system. The method improves the sensibility of precision measurement of the quartz crystal microbalance; the test procedure is stable and reliable, and has good replicability; an ellipsometry film thickness measuring apparatus is used for providing direct film thickness measuring method for the quartz crystal microbalance; and the method has high measuring accuracy, stable test procedure and good replicability.
Owner:NO 510 INST THE FIFTH RES INST OFCHINA AEROSPAE SCI & TECH
Anti-refractive film
ActiveUS20180106929A1Reduce reflectivityHigh light transmittanceMaterial analysis using wave/particle radiationSynthetic resin layered productsRefractive indexGeneral equation
Disclosed herein is an anti-reflective film including: a hard coating layer; and a low-refractive layer containing a binder resin, and hollow inorganic nanoparticles and solid inorganic nanoparticles which are dispersed in the binder resin, wherein the low-refractive layer includes a first layer containing at least 70 vol % of the entire solid inorganic nanoparticles and a second layer containing at least 70 vol % of the entire hollow inorganic nanoparticles, and at the time of fitting polarization ellipticity measured by ellipsometry for the first layer or / and the second layer included in the low-refractive layer using a Cauchy model represented by the following General Equation 1, the second layer satisfies a predetermined condition.
Owner:LG CHEM LTD
Localized surface plasmon resonance sensing system with anisotropic particles
InactiveUS20140354993A1Improve FOMOvercomes shortcomingScattering properties measurementsLight polarisation measurementPhase differenceRefractive index
A localized surface plasmon resonance (LSPR) sensing system with anisotropic particles is revealed. The anisotropy of nanoparticles spectrally splits the phase spectra of two perpendicular polarizations thus inducing a phase difference between the two polarizations. An apparatus of ellipsometry is used to measure the phase difference. The simulated results demonstrate that the full width at the half maximum of the spectrum of phase difference is much narrower than the spectrum of transmittance. Therefore the figure of merit is dramatically increased and the performance of the refractive index sensor is improved.
Owner:NAT CHENG KUNG UNIV
Method and apparatus for ellipsometry measurement
ActiveUS20110176133A1Reduce hardware costsReduce measurementPolarisation-affecting propertiesLight polarisation measurementTarget surfaceRotation - action
To avoid the rotation action with the polarizer and the analyzer in ellipsometric measurement, complex measurement and repeated process, this invention proposes to polarize the incident light in a fixed azimuthal angle then illuminate the polarized light onto the target surface, analyze the surface polarized characteristics light in a fixed azimuthal angle, and obtain the light intensity and phase information corresponding to the target surface, then based on the relationship between the characteristics information detected by electromagnetic wave and the light intensity information, to obtain the characteristics information of the target surface. In the measurement process, since there may be deviation in polarized azimuthal angle, incident angle and the analyzer azimuthal angle, this invention proposed to use references surfaces to calibrate, after this calibration, based on all the azimuthal angles, the light intensity corresponding to the target surface and the phase information, use the relationship between the characteristics information and the light intensity information, to obtain the characteristics information of the target surface.
Owner:RAINTREE SCI INSTR SHANGHAI
Apparatus and method for simultaneously measuring characteristics of molecular junctions and refractive index of buffer solution
ActiveUS20150253243A1Accurately determineLow production costPolarisation-affecting propertiesPhase-affecting property measurementsRefractive indexPrism
An apparatus and method for simultaneously measuring, in an immersion microchannel environment, the characteristics of molecular junctions such as a low-molecular-weight biomaterial and the like and the refractive index of a buffer solution by using ellipsometry. Specifically, disclosed is an apparatus for simultaneously measuring, with high sensitivity, the change in refractive index of a buffer solution and the junction dynamic characteristics of a biomaterial by allowing polarized incident light to be received at a biomaterial adsorption layer, which is formed on a substrate such as a semiconductor and the like, so as to meet an anti-reflection condition of a P-wave by using a prism structure and a microchannel; and a measurement method using the same.
Owner:KOREA RES INST OF STANDARDS & SCI
Online measurement node selection method for wireless network
InactiveCN101917738AReduce computational complexityReduce transmission costAssess restrictionHigh level techniquesNetwork managementEllipsometry
The invention provides an online measurement node selection method for a wireless network. The method comprises that: a measurement control node starts a network management system to configure a measured node and a measurement data processing node; the measured node and the measurement data processing data transmit communication covered radius and position information to the measurement control node; other network nodes transmit position information to the measurement control node; the measurement control node divides an ellipsometry region according to an online measurement task, the position information of the measurement node, the communication covered radius and position information of the measured node and the measurement data processing node; and the measurement control node calculates the position of the measurement node with the best performance metric, and selects an actual measurement node which is closest to the measurement node with the best performance metric. The method can reduce the cost for transmitting a measurement report on the premise of meeting the detection probability required by the wireless network.
Owner:CHONGQING UNIV
Surface plasmon resonance sensor using beam profile ellipsometry
ActiveUS20120057146A1Easy to measureRadiation pyrometryPolarisation-affecting propertiesSurface plasmon resonance imagingBiological materials
Provided is a multi-channel surface plasmon resonance sensor using beam profile ellipsometry; and, more particularly, to a high sensitive measuring technology, which is coupled with a vertical illumination type focused-beam ellipsometer using a multi-incident angle measurement method, and a surface plasmon resonance (SPR) sensing part deposited with a metal thin film. The multi-channel surface plasmon resonance sensor includes a vertical illumination type focused-beam ellipsometer, in which light is polarized; a surface plasmon resonance (SPR) sensing part which is provided at the objective lens part of the focused-beam ellipsometer so as to generate SPR according to an angle change of the polarized light; and a flow unit which supplies a buffer solution containing a bio material binding to or dissociation from the metal thin film generating surface plasmon, wherein the SPR and the ellipsometric phase change by change in an angle and a wavelength are simultaneously detected.
Owner:KOREA RES INST OF STANDARDS & SCI
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