40 results about "Ellipsometry" patented technology

Variable-angle ellipsometry is performed using a high speed polarization state modulator, a photodetector, and a digital micromirror device or spinning disk to encode the angle of incidence of light with a high sampling rate in a time domain or frequency domain. A variable-angle ellipsometer uses a high speed, axially stationary polarization state modulator, such as a photoelastic modulator, and a high speed detector, such as a photodiode, for high speed data acquisition. To acquire data at a plurality of incident angles, a lens is used to generate a large incident angle distribution along an optical axis that is at an oblique angle of incidence and discrete or combinations of incident angles of light are selected in a sequence in the time domain or modulated over a plurality of incident angles in the frequency domain.

A method of optimizing atomic scale processing of a coated and / or etched substrate includes: providing a substrate; subjecting the substrate to atomic scale processing to produce a coated and / or etched substrate; subjecting the coated and / or etched substrate to ellipsometry, including: directing a beam of light with a wavelength at a surface of the coated and / or etched substrate; polarizing the beam of light to obtain polarized light; measuring a change in polarization of the polarized light after the polarized light reflects off of the surface of the coated and / or etched substrate to obtain sample polarization data; and determining a film thickness and / or an optical property of the coated and / or etched substrate by comparing the sample polarization data to an ellipsometric model; and adjusting the atomic scale processing based on the determined film thickness and / or the determined optical property.

The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ell

The invention relates to a device (10) for the real-time determination of a flat covering (20) made of a dielectric material, in particular an organic material, on a strip-or plate-shaped substrate (11), such as a material strip made of metal or plastic, having an optical detection device (1) based on elliptical polarization measurement, the invention relates to a device (1) for detecting and quantifying a coating or covering (20) on a substrate (11) as a function of a change in the polarization state of light reflected on the substrate (11) or the covering (20), having at least one light source (2) directed at a surface of the substrate (11) at a predetermined angle of incidence, the invention relates to a device (10) for detecting light reflections on a substrate (11), comprising a light source (2) for emitting light, at least one image detection device (3) arranged opposite the light source (2) corresponding to an exit angle for detecting light reflections on the substrate (11), and an evaluation unit (4) configured and designed to determine and evaluate a covering (20) on the substrate (11), the device (10) being characterized in that the light source (2) comprises an infrared light source (21, 22), the image detection device (3) comprises an infrared camera (31); optical means (5) are provided for limiting a light beam incident from the light-emitting source (2) side, said optical means defining a linear or substantially rectangular detection area E of the light reflected on the substrate (11) in order to detect the covering (20) by the IR camera (31); a polarization beam splitting device (7) is arranged between the substrate (11) and the IR camera (31) for at least twice polarization beam splitting of the IR light detected by the IR camera (31), so that at least twice images with at least two different polarizations can be generated from the detection area E.

The application discloses a kind of optical properties and geometric characteristics measurement method of thin film material, belong to ellipsometry field, this method includes: using spline model and forward optical property model generates training set;Training neural network model;The preliminary result of the geometric parameter and spline parameter of material obtained by inputting measured optical characterization to neural network is sequentially input spline model and forward optical property model to obtain theoretical optical characterization, the deviation between theoretical and measured optical characterization is used to optimize neural network model, and the predicted value output by it is the final geometric and optical property parameters of the material.The present application does not depend on the experience of the operator, and can realize intelligent characterization;It has strong generalization ability, can solve the problem of inaccurate prediction caused by insufficient training data, and can test samples with different measurement configurations than the training set;It is suitable for measuring various geometric structures;The extraction result is accurate, and the robustness to noise is good.

The invention discloses an ellipsometry depolarization correction method and system, and the method comprises the steps: measuring a to-be-measured sample through a Mueller matrix ellipsometer, and obtaining a measurement Mueller matrix Me of the to-be-measured sample; decomposing the measurement Mueller matrix Me to determine a depolarization matrix M3 representing a depolarization effect; and correcting the measurement Mueller matrix Me by using the depolarization matrix M3 to obtain a corrected Mueller matrix M0. According to the method, the depolarization effect can be effectively separated and corrected through the accurate matrix decomposition and correction process, and interference of the depolarization effect on the measurement result is avoided. The innovative nonlinear fitting method combines the corrected Mueller matrix and depolarization matrix, and constructs a joint evaluation function for global optimization, so that the extraction of optical parameters is more accurate and physically self-consistent. The iterative optimization step further improves the measurement precision, and compared with the prior art, the measurement problem of a complex sample can be better solved, and a more reliable solution is provided for the field of optical measurement.

An optical metrology device configured for transient ellipsometry includes a light source with at least one laser, that generates pump pulses at a first pulse repetition rate and probe pulses at a second, different, pulse repetition rate that produces a varying time delay between the pump pulses and the probe pulses. The pump pulses generate transient perturbations in the sample material and reflected probe pulses are modulated in response to the transient perturbation in the sample material based on the varying time delay. A polarization state generator generates a polarization state in the probe pulses and a polarization state analyzer analyzes the reflected probe pulses from the sample, which is received by a detector. Transient ellipsometric measurements are generated from the reflected probe pulses at a plurality of time delays between the pump pulses and probe pulses.

The invention provides an ellipsometer measurement system and a measurement method. The system comprises an ultrasonic excitation unit, an ellipsometer detection unit, a focusing unit and a processing unit. A first light beam emitted by the ultrasonic excitation unit and a second light beam emitted by the ellipsometry detection unit are focused on the same area of the surface of the to-be-detected sample through the focusing unit; the reflected light of the to-be-detected sample reflecting the light beams is received by the ellipsometry detection unit and converted into an electric signal, and the processing unit determines the thickness of the to-be-detected sample according to the first light beam, the second light beam and the electric signal. The system utilizes pulse laser to excite high-frequency ultrasonic waves on the surface of a thin film, so that the polarization state of reflected probe light is influenced, and micro modulation synchronous with the ultrasonic frequency is formed. The thickness and the optical constant of the thin film are measured in a lossless manner; by combining the laser ultrasonic technology and the ellipsometer, the application range of the ellipsometer is remarkably expanded, and the ellipsometer can meet the requirements for online detection of light-proof films in the fields of semiconductors, precision optical processing and the like.

The ellipsometer comprises an objective table, a polarization starting arm, a polarization detecting arm, a rotation driving assembly and a displacement driving assembly. The rotation driving assembly is connected with and drives the polarization starting arm and the polarization detecting arm to rotate around different central axial directions parallel to the first direction, and the first direction is perpendicular to the incident plane of the ellipsometer. And the displacement driving assembly is connected with and drives the polarization starting arm and the polarization detecting arm to move in the incident plane. The rotation driving assembly and the displacement driving assembly can drive the polarization starting arm and the polarization detecting arm to be switched between a first position close to the objective table and a second position away from the objective table. When the polarizing arm and the polarization detection arm are located at the first position, the polarizing arm and the polarization detection arm are in a detection state facing the objective table. When the polarizing arm and the polarization detecting arm are located at the second position, the polarizing arm and the polarization detecting arm can rotate to the debugging state. According to the ellipsometer, the displacement driving assembly drives the polarizing arm and the polarization detecting arm to move in the incident plane, when the ellipsometer needs to be debugged, in the process of rotating to the debugging state, the rotation movement of the polarizing arm and the polarization detecting arm is not interfered by the objective table, and the reliability of the ellipsometer is improved.

The invention discloses a correction method and device for ellipsometry, and a storage medium. The method comprises the following steps: collecting energy intensity distribution of a light spot at an exit pupil plane position of an incident arm lens; on the basis of energy intensity distribution, a discretized intensity distribution dot matrix is generated in a self-adaptive mode, and the normalized weight of each point is calculated; establishing a discretized numerical aperture distribution function based on the intensity distribution dot matrix, the normalized weight and the lens numerical aperture parameter; and correcting a depolarization effect in spectral ellipsometry by using the numerical aperture distribution function to obtain a measurement result of the optical critical dimension or the film thickness. According to the method, the accurate numerical aperture model is established through the real light spot characteristics, the problem of measurement errors caused by light spot deformation caused by the diaphragm is effectively solved, the accuracy and reliability of optical critical dimension or film thickness measurement are remarkably improved, and meanwhile the method has the advantages of being low in implementation cost and high in adaptability.

The invention relates to the technical field of optical measurement, and provides a cholesteric liquid crystal refractive index measurement method, device and equipment and a medium. According to the method, when a target polarization grating is in an abnormal diffraction state, incident parameters of an incident beam and emergent parameters of an emergent beam are collected; and the actual optical characteristics of the cholesteric liquid crystal are directly reflected in the measurement process. A Mueller matrix is constructed on the basis of incident parameters and emergent parameters, polarization state changes of light beams are described, the influence of cholesteric liquid crystal molecule arrangement on the light polarization state is more accurately captured, and measurement errors caused by optical property differences are reduced. Ellipsometry parameters are calculated through a Mueller matrix, and key features of light beam polarization state changes are further extracted. According to the method, the ellipsometry parameters are analyzed through the parameter fitting model, the refractive index of the target polarization grating is directly generated, measurement errors caused by structural differences in related technologies are avoided, and therefore the accuracy and reliability of measurement results are remarkably improved.

The invention discloses a dual-mode ellipsometry device and method based on wafer oblique placement, and the device comprises a base, and a reflection ellipsometry module, a transmission ellipsometry module and a vertical self-positioning sample stage which are arranged above the base, and a wafer sample is vertically placed on the vertical self-positioning sample stage. The reflection ellipsometry measurement module comprises a reflection polarization arm and a reflection polarization detection arm, the reflection polarization arm and the reflection polarization detection arm are used for conducting reflection ellipsometry detection on a wafer sample to obtain a first ellipsometry parameter, and the reflection polarization arm and the reflection polarization detection arm are symmetrically arranged in the normal direction of the surface of the wafer sample during detection; the transmission ellipsometry measurement module comprises a transmission polarization arm and a transmission polarization detection arm, the transmission polarization arm and the transmission polarization detection arm are used for carrying out transmission ellipsometry detection on the wafer sample to obtain a second ellipsometry parameter, and the transmission polarization arm and the transmission polarization detection arm are located on the same straight line and are both perpendicular to the surface of the wafer sample during detection. According to the invention, the problem of low precision and efficiency caused by poor measurement flexibility is solved.

The invention provides an oblique incidence type angle resolution ellipsometry spectral measurement device based on back focal plane imaging, the device comprises an incidence arm, a reflection arm and a sample real space microscopic imaging module, the incidence arm assembly sequentially comprises a light source module, a light beam collimation and beam expansion module, a polarizer, a liquid crystal variable phase retarder and an objective lens; the emergent arm assembly sequentially comprises a condensing lens, an analyzer, a back focal plane imaging lens and a back focal plane imaging camera; and the sample real space microscopic imaging module sequentially comprises a microscopic objective lens, an imaging lens and a microscopic imaging camera. The invention also provides an oblique incidence type angle resolution ellipsometry spectrum measurement method based on back focal plane imaging, which is realized by adopting the device.

The invention provides a multi-layer thin film spectrum inversion model training method, an inversion method, electronic equipment and a medium, the inversion model training method comprises the following steps: obtaining spectrum data used for training, the spectrum data comprising ellipsometry parameters of a thin film structure; and encoding the ellipsometry parameters, and inputting encoding information into the spectrum inversion model to obtain a prediction result of the spectrum inversion model. Determining a loss function based on a prediction result of the spectrum inversion model; the prediction result comprises an ellipsometry parameter prediction result of the thin film structure and a structure parameter prediction result of each layer of thin film structure, so that the physical interpretability of the prediction result of the spectrum inversion model can be effectively ensured while the parameter dimension of the model is reduced; the end-to-end training of the spectrum inversion model based on the spectrum data used for training is realized, and the spectrum inversion model obtained by training is ensured to realize effective inversion of a multilayer film structure.

The present disclosure relates to a method for measuring a sample based on an ellipsometer and an ellipsometric measuring device. The method for measuring a sample based on an ellipsometer comprises: collecting a first measurement Mueller spectrum corresponding to a reference light spot position, and obtaining a first Mueller matrix; moving a cylindrical body along a direction perpendicular to an incident plane by a first preset distance to form a measurement light spot, collecting a second measurement Mueller spectrum corresponding to the measurement light spot position, and obtaining a second Mueller matrix; determining a mathematical relationship between the second Mueller matrix and the first Mueller matrix; representing the second Mueller matrix as a first function of an incident light wavelength, a film thickness, and an included angle based on a Fresnel equation and the mathematical relationship; fitting the second measurement Mueller spectrum based on the first function using a nonlinear regression algorithm to obtain a measured value of the film thickness and the included angle; and calculating a radius of the cylindrical body based on the first preset distance and the measured value of the included angle. The method realizes rapid and non-destructive measurement of the radius of the cylindrical sample.

Variable-angle ellipsometry is performed using a high speed polarization state modulator, a photodetector, and a digital micromirror device or spinning disk to encode the angle of incidence of light with a high sampling rate in a time domain or frequency domain. A variable-angle ellipsometer uses a high speed, axially stationary polarization state modulator, such as a photoelastic modulator, and a high speed detector, such as a photodiode, for high speed data acquisition. To acquire data at a plurality of incident angles, a lens is used to generate a large incident angle distribution along an optical axis that is at an oblique angle of incidence and discrete or combinations of incident angles of light are selected in a sequence in the time domain or modulated over a plurality of incident angles in the frequency domain.

The application belongs to the field of ellipsometry, and specifically discloses a non-planar sample film thickness measurement method and system based on a Fourier ellipsometer. Based on the local micro-area equivalent principle, the local measurement area of the curved sample is equivalent to an inclined plane. In combination with the light beam vector tracing and the Fourier imaging principle, the correspondence between the actual incident angle, the azimuth angle and the FP coordinate is established, and the FP mapping model suitable for the non-planar sample is constructed. Further, based on the correspondence, the FP distortion reverse correction model is established, the coordinate correspondence between the ideal horizontal state and the inclined state is constructed, the distorted FP data is reverse mapped and reconstructed, so as to restore the correspondence between the FP coordinate and the incident angle and the azimuth angle. Finally, based on the corrected FP data, the reflectivity and the ellipsometric parameters are extracted, and the film thickness measurement of the non-planar sample to be measured is realized. The film thickness measurement is suitable for the inclined planar sample and the local area of the curved sample satisfying the local micro-area equivalent condition.

The invention relates to the technical field of semiconductor material nondestructive testing, and discloses a terahertz time-domain spectroscopy elliptical polarization semiconductor wafer electrical parameter nondestructive testing system, which comprises a terahertz transmitting module, a terahertz receiving module, a terahertz receiving module and a terahertz receiving module, the polarization control module regulates and controls the polarization state of the terahertz pulse; the sample fixing module fixes a wafer and adjusts an incident angle; the terahertz receiving module detects a reflected signal and performs time domain sampling; the data processing module extracts ellipsometry parameters and calculates resistivity, carrier concentration, mobility and dielectric constant; and the central control module judges whether the electrical parameters reach the standard or not according to the resistivity detection result, and performs feedback adjustment on the incident angle, the polarization state or the time domain sampling frequency of the next detection batch when the electrical parameters do not reach the standard, so that intelligent optimization and result consistency of the detection process are realized. According to the invention, the automation degree and the measurement stability of the electrical parameter detection of the semiconductor wafer are effectively improved.

An optical metrology device configured for transient ellipsometry includes a light source with at least one laser, that generates pump pulses at a first pulse repetition rate and probe pulses at a second, different, pulse repetition rate that produces a varying time delay between the pump pulses and the probe pulses. The pump pulses generate transient perturbations in the sample material and reflected probe pulses are modulated in response to the transient perturbation in the sample material based on the varying time delay. A polarization state generator generates a polarization state in the probe pulses and a polarization state analyzer analyzes the reflected probe pulses from the sample, which is received by a detector. Transient ellipsometric measurements are generated from the reflected probe pulses at a plurality of time delays between the pump pulses and probe pulses.

Methods and systems for performing spectral ellipsometry (SE) measurements on a surface structure of an optical element fabricated on a transparent substrate are presented herein. An SE measurement system is configured to detect light from a measured structure without being contaminated by light reflected from a backside surface of the transparent substrate. A surface structure of an optical element includes a film structure and a grating structure fabricated on a thin transparent substrate. An SE-based measurement system is configured with a relatively large illumination numerical aperture (NA) and a relatively high zoom from an illumination source to a measurement spot on an optically transparent substrate. This configuration results in a relatively small measurement spot size and a small depth of focus, which minimizes the amount of light reflected from the backside of the optically transparent substrate. In addition, the relatively small collection aperture size further minimizes backside reflected light reaching the detector.

The invention relates to the field of terahertz polarization detection, and particularly provides a method for obtaining a terahertz wave polarization state without an additional polarization device, and the method comprises the following steps: S1, obtaining terahertz time domain signals under different relative phases; s2, obtaining light current density according to the nonlinear tensor element of the excited material, and calculating an electric field of the terahertz wave in the horizontal direction and an electric field of the terahertz wave in the vertical direction according to the light current density; s3, synthesizing the horizontal electric field and the vertical electric field into a terahertz electric field, and fitting the amplitude of the terahertz time domain signal by using the terahertz electric field to obtain fitting coefficients A and B; and S4, determining the ellipsometry of the terahertz wave by using the fitting coefficients A and B and the relative phase, and obtaining the polarization state. According to the method, the polarization state information which is difficult to directly detect is obtained through theoretical calculation and fitting by using the terahertz time domain signal which is easy to obtain, and the accuracy of terahertz wave polarization state detection is improved while the cost is reduced.

The invention belongs to the technical field of optical measurement, and particularly discloses a Mueller matrix-based single-frame snapshot rear focal plane ellipsometry method, which comprises the following steps of: constructing a Mueller matrix response model of a rear focal plane ellipsometry system based on an angular spectrum kernel function and a sample Mueller matrix, the angular spectrum kernel function is used for describing the angular spectrum mapping weight of the rear focal plane ellipsometry system for sample polarization response under the conditions of different incident angles and azimuth angles; obtaining a normalized spectral image of the sample based on the back focal plane angle resolution spectral image of the sample, the back focal plane angle resolution spectral image of the reference substance and the angular spectrum kernel function; and traversing the effective radiuses of the normalized spectral image, and determining sample Mueller matrix elements under each effective radius through a Mueller matrix response model. According to the method and the device, the solution of the Mueller matrix elements of the sample can be completed only by acquiring the rear focal plane angle resolution spectral image of the single measured sample, and single-frame snapshot type rear focal plane ellipsometry is realized.

The invention belongs to the technical field of far infrared refractive index detectors, and particularly relates to a far infrared refractive index detector based on a thin metasurface and a preparation method of the far infrared refractive index detector. The method comprises the following steps: providing a polar dielectric substrate and a high-refractive-index material, obtaining dielectric functions of the polar dielectric substrate and the high-refractive-index material through an ellipsometry test, performing full-wave numerical simulation by taking the obtained parameters as input, constructing a metasurface physical model, testing transmissivity and complex refractive index of a medium to be tested, and assembling a PMMA micro-channel, the metasurface and the medium to be tested into an integrated device to carry out joint test. And finally, the reflection spectrum of the assembly device in the far infrared band is obtained through an ellipsometry test. According to the invention, through a novel material model and model optimization, comprehensive performances of insensitivity of an incidence angle of a far infrared band, high narrow-band absorption, strong near field and high penetration depth are realized; therefore, the problems of strong incidence angle dependence, insensitivity to volume phase response, easy surface pollution / adsorption interference, high device size and complexity, low detection efficiency and the like in the traditional technology are effectively solved.

The application belongs to the technical field of full-range ellipsometry devices, and particularly relates to a full-range ellipsometry device based on double photoelasticity cascade difference frequency modulation, which comprises a detection light source, a polarizer, a first photoelasticity modulator, a sample, a second photoelasticity modulator, a detection polarizer and a photodetector, the light path direction of the detection light source is sequentially provided with the polarizer, the first photoelasticity modulator and the sample, and the reflected light path of the sample is sequentially provided with the second photoelasticity modulator, the detection polarizer and the photodetector. The application utilizes the advantages of high modulation frequency, large modulation purity, wide light spectrum range and large field of view angle of the photoelasticity modulator, selects two photoelasticity modulators with inconsistent modulation frequencies for joint use, constructs double photoelasticity cascade difference frequency modulation, and based on the modulation technology, can realize the measurement of all four Stokes vectors of the outgoing light, and further can realize the full-range measurement of ellipsometric parameters.

The application discloses a method for measuring the absorption coefficient of quantum well material, which comprises the following steps: (1) growing an epitaxial layer containing a quantum well structure on a substrate; (2) obtaining the total thickness of the quantum well layer; (3) preparing a sample from the epitaxial wafer and obtaining the reflectivity of the upper and lower interfaces of the epitaxial layer in the sample; (4) testing the external quantum efficiency curve when the photo-generated carriers in the quantum well structure are 100% collected, and analyzing the internal quantum efficiency curve of the light response of the quantum well structure according to the external quantum efficiency curve; and (5) solving the relationship between the absorption coefficient and the internal quantum efficiency, the reflectivity and the total thickness of the quantum well layer to obtain the absorption coefficient. The method provides a way for obtaining the absorption coefficient of the quantum well material, has the advantages of simplicity, practicality, no requirement for the substrate material, high accuracy and the like, avoids the shortcomings that the traditional ellipsometry method is not applicable to measuring the quantum well structure and the transmission method requires a transparent substrate, and is of great significance for device design.

Optical thin film material optical constant inversion optimization method and device, and semi-transparent optical thin film material optical constant detection method and device, relate to the field of optical properties. In view of the problem that the optical constant of the semi-transparent optical thin film cannot be obtained by using ellipsometry in the prior art, the technical scheme provided by the present application is: an optical thin film material optical constant detection method, comprising: step 1: collecting pseudo optical constant; step 2: collecting the initial value of the parameter in the search range as the iteration parameter; step 3: collecting the incident polarized light wavelength and angle corresponding to the iteration parameter; step 4: obtaining the ellipsometric parameter according to the iteration parameter and the wavelength and angle; step 5: calculating the fitness of the current iteration parameter according to the ellipsometric parameter; step 6: judging whether the fitness meets the preset condition, if yes, outputting the current iteration parameter as the result, if not, returning and executing steps 2 to 6 in turn. It is suitable for exploring the optical constant of the semi-transparent optical thin film.

The application provides a method, device and equipment for determining the intrinsic band gap width of a thin film dielectric material, wherein the method comprises: performing ellipsometry on a single crystal or polycrystalline thin film dielectric material to be measured to obtain ellipsometry parameters; generating ellipsometry simulation parameters based on a pre-constructed measurement model; generating a spectral absorption dispersion curve through iteration and fitting according to the ellipsometry parameters and the ellipsometry simulation parameters; performing Gaussian function peak separation fitting processing based on the spectral absorption dispersion curve to obtain peak separation fitting Gaussian function parameters and a reference dispersion curve; extracting target fitting Gaussian function parameters and a target reference dispersion curve corresponding to a characteristic absorption peak of the thin film dielectric material, and performing normalization and linear extrapolation to determine the intrinsic band gap width of the thin film dielectric material. The intrinsic band gap width of the single crystal or polycrystalline thin film dielectric material to be measured is determined through normalization and linear extrapolation of the target fitting Gaussian function parameters and the target reference dispersion curve.

The application discloses an ellipsometry depolarization error correction method, system, device and storage medium, and the method comprises the following steps: obtaining original measurement data obtained by an ellipsometer in measuring a sample to be measured; pre-correcting the original measurement data to obtain pre-corrected data; modeling the pre-corrected data to obtain an optical model corresponding to the sample to be measured; selecting an incident light ray in the optical model, and calculating an effective ellipsometric Mueller matrix representing the NA depolarization effect in the sample to be measured based on the selected incident light ray and the system NA value of the ellipsometer; and iteratively correcting the pre-corrected data by using the effective ellipsometric Mueller matrix to obtain target correction data of the sample to be measured. The application can establish an analytical model of the effective Mueller matrix caused by the NA effect by using only one light ray in the optical model, can effectively eliminate the depolarization effect caused by the focusing of the light beam in the micro-light spot mode of the ellipsometry, and can greatly reduce the calculation amount and significantly improve the correction efficiency.

The invention provides a multi-layer thin film spectrum inversion model training method based on small sample migration, a multi-layer thin film spectrum inversion method, equipment and a medium, and aims to solve the technical problem that the spectrum inversion method has a large demand for sample data. In order to achieve the purpose, a spectrum inversion model is pre-trained based on a spectrum synthesis data set, a sample data set containing multiple pieces of spectrum sample data in a preset migration scene is obtained, and the spectrum sample data comprises ellipsometry parameters of a multi-layer thin film structure in the migration scene. According to the sample data set, the pre-trained spectrum inversion model is adjusted, the spectrum inversion model adapting to the migration scene is obtained, when the spectrum inversion model is adjusted, model parameters of the backbone network are frozen, the model adjustment speed can be increased, efficient and high-precision model adjustment of the spectrum inversion model adapting to the migration scene is achieved, and the migration scene migration efficiency is improved. And the adaptability and reasoning efficiency of the spectrum inversion model for different migration scenes are improved.

The present application belongs to the technical field of nano characterization, and discloses a characterization method and system for deep hole etching defect morphology. First, the present application selects an incident angle satisfying a high sensitivity condition through scattering measurement, then performs ellipsometry based on the incident angle, and further judges the deep hole etching defect type by using deep learning. Then, the incident angle is first increased to adapt to mask detection, and then ellipsometry and mask deformation closed loop judgment are performed based on the increased incident angle, and finally the defect type conclusion is obtained. The present application fully utilizes the characteristics of scattering measurement, ellipsometry and deep learning technology, can realize online and non-destructive characterization in the deep hole etching process, and can provide a one-stop solution for the detection of high aspect ratio, etching vertical and consistent aperture etching through holes.