73 results about "Ellipsometry" patented technology

The invention discloses a device and a method for measuring geometric parameters and performance parameters of a sample, the device comprises a white light interference measurement module, a Raman spectrum measurement module and an ellipsometry measurement module, and the white light interference measurement module and the Raman spectrum measurement module adopt a partial common-path design. Common-optical-path measurement of Raman spectrum data and interference fringe images is achieved, the surface appearance and material composition information of the same measurement point position can be obtained at the same time, and in-situ high-precision obtaining of geometric parameters and material composition information in ellipsometry modeling is achieved. The condition of analysis errors caused by inconsistent information carried by different measurement points of the heterogeneous film is avoided, and the precision and the reliability of an ellipsometry measurement result can be greatly improved. According to the method for measuring the geometric parameters and the performance parameters of the film layer on the surface of the wide bandgap semiconductor wafer, the morphological information and the performance parameters of the heterogeneous film can be comprehensively and accurately measured and represented by combining the ellipsometric spectrum, the white light interference, the Raman spectrum and other technologies.

An optical metrology device includes a selectable pump arm that is used to produce a transient response in the target sample and a probe arm and may be configured to perform static Magneto-Optic Kerr Effect (MOKE) measurements or ellipsometry measurements when the pump arm is not selected, and time resolved (TR) MOKE measurements or ellipsometry measurements when the pump arm is selected. The optical metrology device may be further configured to perform opto-acoustic measurements when the pump arm is selected. A pulse shaper in the pump arm may be used to pulse duration, phase, or both, of the incident pump beam to enable measurement of the dependence of the magnetic dynamics on the pump pulse characteristics. The optical metrology device may be configured to operate at a single selectable wavelength or multiple wavelengths in a continuous or discontinuous spectrum.

The invention belongs to the technical field of optical measurement, and particularly discloses double-channel photoelastic modulation ellipsometry equipment and method. The device is constructed based on the ellipsometry principle of photoelastic modulation and comprises a light source, a collimating lens, a first polaroid, a second polaroid, a first photoelastic modulator, a sample table, a second photoelastic modulator, a beam splitter and a plurality of signal collectors. According to the device, the photoelastic modulator utilizes the piezoelectric effect and stress birefringence principle, modulation of signals is achieved by applying an alternating electric field, the modulation method does not need any moving part, and measurement can be completed stably at a high speed. Moreover, through the arrangement of multi-channel detection in the equipment, the equipment can obtain information of multiple wavelengths of the sample at the same time, and the thickness and optical parameters of the film sample are calculated in sequence.

Variable-angle ellipsometry is performed using a high speed polarization state modulator, a photodetector, and a digital micromirror device or spinning disk to encode the angle of incidence of light with a high sampling rate in a time domain or frequency domain. A variable-angle ellipsometer uses a high speed, axially stationary polarization state modulator, such as a photoelastic modulator, and a high speed detector, such as a photodiode, for high speed data acquisition. To acquire data at a plurality of incident angles, a lens is used to generate a large incident angle distribution along an optical axis that is at an oblique angle of incidence and discrete or combinations of incident angles of light are selected in a sequence in the time domain or modulated over a plurality of incident angles in the frequency domain.

A method of optimizing atomic scale processing of a coated and / or etched substrate includes: providing a substrate; subjecting the substrate to atomic scale processing to produce a coated and / or etched substrate; subjecting the coated and / or etched substrate to ellipsometry, including: directing a beam of light with a wavelength at a surface of the coated and / or etched substrate; polarizing the beam of light to obtain polarized light; measuring a change in polarization of the polarized light after the polarized light reflects off of the surface of the coated and / or etched substrate to obtain sample polarization data; and determining a film thickness and / or an optical property of the coated and / or etched substrate by comparing the sample polarization data to an ellipsometric model; and adjusting the atomic scale processing based on the determined film thickness and / or the determined optical property.

Presented herein are methods and systems for performing spectral ellipsometry of semiconductor structures using reflection collection relay optics that have a zoom from a spectrometer slit to a detector. The zoom effectively increases the NA at the detector and reduces the measurement spot size at the wafer imaged onto the detector. In this manner, the magnification maintains a high spectral resolution at the detector, in particular within the ultraviolet wavelength range, such as 120 to 400 nanometers, while maintaining a small collection NA at the wafer, such as a collection NA of less than 0.05. The small collection NA achieves high fringe contrast, signal fidelity, and sensitivity when measuring a thick multi-layer stack, such as 200 to 300 layers.

The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ellipsometric film thickness measuring system and relates to the technical field of film measurement. The application discloses an integrated high-precision ell

The invention relates to a device (10) for the real-time determination of a flat covering (20) made of a dielectric material, in particular an organic material, on a strip-or plate-shaped substrate (11), such as a material strip made of metal or plastic, having an optical detection device (1) based on elliptical polarization measurement, the invention relates to a device (1) for detecting and quantifying a coating or covering (20) on a substrate (11) as a function of a change in the polarization state of light reflected on the substrate (11) or the covering (20), having at least one light source (2) directed at a surface of the substrate (11) at a predetermined angle of incidence, the invention relates to a device (10) for detecting light reflections on a substrate (11), comprising a light source (2) for emitting light, at least one image detection device (3) arranged opposite the light source (2) corresponding to an exit angle for detecting light reflections on the substrate (11), and an evaluation unit (4) configured and designed to determine and evaluate a covering (20) on the substrate (11), the device (10) being characterized in that the light source (2) comprises an infrared light source (21, 22), the image detection device (3) comprises an infrared camera (31); optical means (5) are provided for limiting a light beam incident from the light-emitting source (2) side, said optical means defining a linear or substantially rectangular detection area E of the light reflected on the substrate (11) in order to detect the covering (20) by the IR camera (31); a polarization beam splitting device (7) is arranged between the substrate (11) and the IR camera (31) for at least twice polarization beam splitting of the IR light detected by the IR camera (31), so that at least twice images with at least two different polarizations can be generated from the detection area E.

The application discloses a kind of optical properties and geometric characteristics measurement method of thin film material, belong to ellipsometry field, this method includes: using spline model and forward optical property model generates training set;Training neural network model;The preliminary result of the geometric parameter and spline parameter of material obtained by inputting measured optical characterization to neural network is sequentially input spline model and forward optical property model to obtain theoretical optical characterization, the deviation between theoretical and measured optical characterization is used to optimize neural network model, and the predicted value output by it is the final geometric and optical property parameters of the material.The present application does not depend on the experience of the operator, and can realize intelligent characterization;It has strong generalization ability, can solve the problem of inaccurate prediction caused by insufficient training data, and can test samples with different measurement configurations than the training set;It is suitable for measuring various geometric structures;The extraction result is accurate, and the robustness to noise is good.

The invention discloses an ellipsometry depolarization correction method and system, and the method comprises the steps: measuring a to-be-measured sample through a Mueller matrix ellipsometer, and obtaining a measurement Mueller matrix Me of the to-be-measured sample; decomposing the measurement Mueller matrix Me to determine a depolarization matrix M3 representing a depolarization effect; and correcting the measurement Mueller matrix Me by using the depolarization matrix M3 to obtain a corrected Mueller matrix M0. According to the method, the depolarization effect can be effectively separated and corrected through the accurate matrix decomposition and correction process, and interference of the depolarization effect on the measurement result is avoided. The innovative nonlinear fitting method combines the corrected Mueller matrix and depolarization matrix, and constructs a joint evaluation function for global optimization, so that the extraction of optical parameters is more accurate and physically self-consistent. The iterative optimization step further improves the measurement precision, and compared with the prior art, the measurement problem of a complex sample can be better solved, and a more reliable solution is provided for the field of optical measurement.

The present invention discloses an ellipsometry initial incident angle calibration device and method. The calibration device includes a translation device, a first pitch adjustment device, a second pitch adjustment device, and an intermediate adjustment device. The translation device includes a translation platform, a CCD camera, and a telecentric lens. The telecentric lens is detachably mounted on the CCD camera, and the CCD camera translates on the translation platform. The first pitch adjustment device includes a first pitch and yaw adjustment platform and an autocollimator mounted on the first pitch and yaw adjustment platform. The second pitch adjustment device includes a second pitch and yaw adjustment platform and a frequency-stabilized laser mounted on the second pitch and yaw adjustment platform. The intermediate adjustment device includes a position adjustment platform and a pentaprism mounted on the position adjustment platform. Compared with the prior art, the present invention can achieve that the optical axis of the autocollimator is 90° with the movement axis of the CCD camera, and the optical axis of the frequency-stabilized laser is 180° with the movement axis of the CCD camera, so as to complete the calibration of the initial 90° incident angle of ellipsometry.

An optical metrology device configured for transient ellipsometry includes a light source with at least one laser, that generates pump pulses at a first pulse repetition rate and probe pulses at a second, different, pulse repetition rate that produces a varying time delay between the pump pulses and the probe pulses. The pump pulses generate transient perturbations in the sample material and reflected probe pulses are modulated in response to the transient perturbation in the sample material based on the varying time delay. A polarization state generator generates a polarization state in the probe pulses and a polarization state analyzer analyzes the reflected probe pulses from the sample, which is received by a detector. Transient ellipsometric measurements are generated from the reflected probe pulses at a plurality of time delays between the pump pulses and probe pulses.

The present invention belongs to the technical field of spectral ellipsometric structures, and specifically relates to an ultra-wideband spectral ellipsometric structure based on Fourier spectroscopy and grating spectroscopy, comprising a near-infrared to mid-wave infrared band polarizing module, a deep ultraviolet to near-infrared band polarizing module, a sample stage, an analyzing module, and a track. The near-infrared to mid-wave infrared band polarizing module, the deep ultraviolet to near-infrared band polarizing module, the sample stage, and the analyzing module are all arranged on the track, and the track is a circular track. The near-infrared to mid-wave infrared band polarizing module and the deep ultraviolet to near-infrared band polarizing module are both provided with a sample stage in the optical path direction, and the analyzing module is arranged in the optical path direction of the sample stage. The present invention sets different polarizing and analyzing modules for different bands, which can realize a single measurement of a spectral band and increase modulation efficiency. In addition, the present invention adds a track design to the analyzing module, so that the structure can automatically measure the transmission or reflection mode for different incident angles of the band.

The invention discloses an ellipsometry system and method which can be applied to the technical field of optics, and the system comprises an irradiation assembly and a light receiving assembly. The irradiation assembly is arranged at the first inclined upper part of the first plane side of the to-be-detected sample and is used for generating a polarization diffraction beam and obliquely irradiating the polarization diffraction beam to the to-be-detected sample; the to-be-tested sample is used for reflecting the polarization diffraction light beam and generating a signal light beam; the light receiving assembly is arranged on the second inclined upper side of the first plane side of the to-be-detected sample and is used for receiving the signal light beam and separating effective irradiation light and diffraction stray light in the signal light beam; the effective irradiation light and the diffraction stray light are respectively used for determining optical information and height information of the sample to be detected by the light receiving assembly. Thus, effective irradiation light and diffraction stray light can be generated and separated through cooperation of the irradiation assembly and the light receiving assembly, and then the effective irradiation light and the diffraction stray light are respectively used for measuring optical information and height information of the sample to be measured, and the measurement accuracy of the ellipsometry system is guaranteed.

The invention provides an ellipsometer measurement system and a measurement method. The system comprises an ultrasonic excitation unit, an ellipsometer detection unit, a focusing unit and a processing unit. A first light beam emitted by the ultrasonic excitation unit and a second light beam emitted by the ellipsometry detection unit are focused on the same area of the surface of the to-be-detected sample through the focusing unit; the reflected light of the to-be-detected sample reflecting the light beams is received by the ellipsometry detection unit and converted into an electric signal, and the processing unit determines the thickness of the to-be-detected sample according to the first light beam, the second light beam and the electric signal. The system utilizes pulse laser to excite high-frequency ultrasonic waves on the surface of a thin film, so that the polarization state of reflected probe light is influenced, and micro modulation synchronous with the ultrasonic frequency is formed. The thickness and the optical constant of the thin film are measured in a lossless manner; by combining the laser ultrasonic technology and the ellipsometer, the application range of the ellipsometer is remarkably expanded, and the ellipsometer can meet the requirements for online detection of light-proof films in the fields of semiconductors, precision optical processing and the like.

The ellipsometer comprises an objective table, a polarization starting arm, a polarization detecting arm, a rotation driving assembly and a displacement driving assembly. The rotation driving assembly is connected with and drives the polarization starting arm and the polarization detecting arm to rotate around different central axial directions parallel to the first direction, and the first direction is perpendicular to the incident plane of the ellipsometer. And the displacement driving assembly is connected with and drives the polarization starting arm and the polarization detecting arm to move in the incident plane. The rotation driving assembly and the displacement driving assembly can drive the polarization starting arm and the polarization detecting arm to be switched between a first position close to the objective table and a second position away from the objective table. When the polarizing arm and the polarization detection arm are located at the first position, the polarizing arm and the polarization detection arm are in a detection state facing the objective table. When the polarizing arm and the polarization detecting arm are located at the second position, the polarizing arm and the polarization detecting arm can rotate to the debugging state. According to the ellipsometer, the displacement driving assembly drives the polarizing arm and the polarization detecting arm to move in the incident plane, when the ellipsometer needs to be debugged, in the process of rotating to the debugging state, the rotation movement of the polarizing arm and the polarization detecting arm is not interfered by the objective table, and the reliability of the ellipsometer is improved.

A system includes a radiation source that generates radiation having at least one wavelength from 0.1 to 100 nm. One or more rotating elements change polarization of the radiation and / or relative phase between two polarizations of the radiation. A stage is configured to hold a workpiece in a path of the radiation. At least one detector receives spectral reflection and scattering radiation from the workpiece.

The application discloses a medium thin film testing method based on mutual calibration of ellipsometry and ultraviolet-visible spectrum, which comprises the following steps: firstly, fitting ellipsometry spectrum to obtain initial values of refractive index and extinction coefficient, comparing normal extinction coefficient dispersion model to determine abnormal wave band; secondly, fitting transmission spectrum, intercepting transmission spectrum refractive index and extinction coefficient corresponding to the ellipsometer abnormal wave band; then, calculating weighting factor and translation factor to calibrate transmission spectrum refractive index and extinction coefficient in the abnormal wave band; finally, correcting the ellipsometry spectrum of the abnormal wave band and re-fitting to obtain calibrated refractive index and extinction coefficient. The application adopts the above-mentioned medium thin film testing method based on mutual calibration of ellipsometry and ultraviolet-visible spectrum, applies the result of ultraviolet-visible spectrum to index specific wave band ellipsometry spectrum, realizes accurate fitting of refractive index and thickness, and thus improves medium thin film detection precision.

The invention discloses a correction method and device for ellipsometry, and a storage medium. The method comprises the following steps: collecting energy intensity distribution of a light spot at an exit pupil plane position of an incident arm lens; on the basis of energy intensity distribution, a discretized intensity distribution dot matrix is generated in a self-adaptive mode, and the normalized weight of each point is calculated; establishing a discretized numerical aperture distribution function based on the intensity distribution dot matrix, the normalized weight and the lens numerical aperture parameter; and correcting a depolarization effect in spectral ellipsometry by using the numerical aperture distribution function to obtain a measurement result of the optical critical dimension or the film thickness. According to the method, the accurate numerical aperture model is established through the real light spot characteristics, the problem of measurement errors caused by light spot deformation caused by the diaphragm is effectively solved, the accuracy and reliability of optical critical dimension or film thickness measurement are remarkably improved, and meanwhile the method has the advantages of being low in implementation cost and high in adaptability.

The invention relates to the technical field of optical measurement, and provides a cholesteric liquid crystal refractive index measurement method, device and equipment and a medium. According to the method, when a target polarization grating is in an abnormal diffraction state, incident parameters of an incident beam and emergent parameters of an emergent beam are collected; and the actual optical characteristics of the cholesteric liquid crystal are directly reflected in the measurement process. A Mueller matrix is constructed on the basis of incident parameters and emergent parameters, polarization state changes of light beams are described, the influence of cholesteric liquid crystal molecule arrangement on the light polarization state is more accurately captured, and measurement errors caused by optical property differences are reduced. Ellipsometry parameters are calculated through a Mueller matrix, and key features of light beam polarization state changes are further extracted. According to the method, the ellipsometry parameters are analyzed through the parameter fitting model, the refractive index of the target polarization grating is directly generated, measurement errors caused by structural differences in related technologies are avoided, and therefore the accuracy and reliability of measurement results are remarkably improved.

The invention discloses a dual-mode ellipsometry device and method based on wafer oblique placement, and the device comprises a base, and a reflection ellipsometry module, a transmission ellipsometry module and a vertical self-positioning sample stage which are arranged above the base, and a wafer sample is vertically placed on the vertical self-positioning sample stage. The reflection ellipsometry measurement module comprises a reflection polarization arm and a reflection polarization detection arm, the reflection polarization arm and the reflection polarization detection arm are used for conducting reflection ellipsometry detection on a wafer sample to obtain a first ellipsometry parameter, and the reflection polarization arm and the reflection polarization detection arm are symmetrically arranged in the normal direction of the surface of the wafer sample during detection; the transmission ellipsometry measurement module comprises a transmission polarization arm and a transmission polarization detection arm, the transmission polarization arm and the transmission polarization detection arm are used for carrying out transmission ellipsometry detection on the wafer sample to obtain a second ellipsometry parameter, and the transmission polarization arm and the transmission polarization detection arm are located on the same straight line and are both perpendicular to the surface of the wafer sample during detection. According to the invention, the problem of low precision and efficiency caused by poor measurement flexibility is solved.

The invention provides an oblique incidence type angle resolution ellipsometry spectral measurement device based on back focal plane imaging, the device comprises an incidence arm, a reflection arm and a sample real space microscopic imaging module, the incidence arm assembly sequentially comprises a light source module, a light beam collimation and beam expansion module, a polarizer, a liquid crystal variable phase retarder and an objective lens; the emergent arm assembly sequentially comprises a condensing lens, an analyzer, a back focal plane imaging lens and a back focal plane imaging camera; and the sample real space microscopic imaging module sequentially comprises a microscopic objective lens, an imaging lens and a microscopic imaging camera. The invention also provides an oblique incidence type angle resolution ellipsometry spectrum measurement method based on back focal plane imaging, which is realized by adopting the device.

An ellipsoidal light atomic magnetometer device and method based on rotating fiber polarization utilizes a rotating fiber polarizer to emit elliptically polarized light of a set ellipticity, and directs this light beam into the atomic magnetometer head to cause it to interact with alkali metal atoms to achieve magnetic field measurement. The device and method designed in the present invention calculates the torsion length and torsion angle of the rotating fiber polarizer based on the set ellipticity, thereby causing the rotating fiber polarizer to emit elliptically polarized light of the set ellipticity. This elliptically polarized light is directed into the atomic magnetometer head, thereby polarizing the alkali metal atoms and generating an optical rotation angle for signal detection. A high-frequency modulated magnetic field is applied in a direction perpendicular to the light beam, and polarization differential detection technology and phase-locked amplification technology are used to obtain the magnetic field information to be measured. Compared with conventional atomic magnetometer configurations, the present invention uses a rotating fiber polarizer and an ellipsoidal light configuration to construct an atomic magnetometer, resulting in a more compact structure and enhanced temperature stability of the atomic magnetometer head.

A system includes a radiation source that generates radiation having at least one wavelength from 0.1 to 100 nm. One or more rotating elements change polarization of the radiation and / or relative phase between two polarizations of the radiation. A stage is configured to hold a workpiece in a path of the radiation. At least one detector receives spectral reflection and scattering radiation from the workpiece.

The invention provides a multi-layer thin film spectrum inversion model training method, an inversion method, electronic equipment and a medium, the inversion model training method comprises the following steps: obtaining spectrum data used for training, the spectrum data comprising ellipsometry parameters of a thin film structure; and encoding the ellipsometry parameters, and inputting encoding information into the spectrum inversion model to obtain a prediction result of the spectrum inversion model. Determining a loss function based on a prediction result of the spectrum inversion model; the prediction result comprises an ellipsometry parameter prediction result of the thin film structure and a structure parameter prediction result of each layer of thin film structure, so that the physical interpretability of the prediction result of the spectrum inversion model can be effectively ensured while the parameter dimension of the model is reduced; the end-to-end training of the spectrum inversion model based on the spectrum data used for training is realized, and the spectrum inversion model obtained by training is ensured to realize effective inversion of a multilayer film structure.

The present disclosure relates to a method for measuring a sample based on an ellipsometer and an ellipsometric measuring device. The method for measuring a sample based on an ellipsometer comprises: collecting a first measurement Mueller spectrum corresponding to a reference light spot position, and obtaining a first Mueller matrix; moving a cylindrical body along a direction perpendicular to an incident plane by a first preset distance to form a measurement light spot, collecting a second measurement Mueller spectrum corresponding to the measurement light spot position, and obtaining a second Mueller matrix; determining a mathematical relationship between the second Mueller matrix and the first Mueller matrix; representing the second Mueller matrix as a first function of an incident light wavelength, a film thickness, and an included angle based on a Fresnel equation and the mathematical relationship; fitting the second measurement Mueller spectrum based on the first function using a nonlinear regression algorithm to obtain a measured value of the film thickness and the included angle; and calculating a radius of the cylindrical body based on the first preset distance and the measured value of the included angle. The method realizes rapid and non-destructive measurement of the radius of the cylindrical sample.

Variable-angle ellipsometry is performed using a high speed polarization state modulator, a photodetector, and a digital micromirror device or spinning disk to encode the angle of incidence of light with a high sampling rate in a time domain or frequency domain. A variable-angle ellipsometer uses a high speed, axially stationary polarization state modulator, such as a photoelastic modulator, and a high speed detector, such as a photodiode, for high speed data acquisition. To acquire data at a plurality of incident angles, a lens is used to generate a large incident angle distribution along an optical axis that is at an oblique angle of incidence and discrete or combinations of incident angles of light are selected in a sequence in the time domain or modulated over a plurality of incident angles in the frequency domain.

The invention discloses a method and system for correcting a limited bandwidth depolarization effect in ellipsometry, and the method comprises the steps: measuring a to-be-measured sample through an ellipsometer, and obtaining measurement ellipsometry angle data; secondly, establishing a spectral energy distribution model for the limited bandwidth of the light source, dividing the bandwidth into a plurality of wavelength sections, and determining the energy ratio of each section; on the basis of the model, energy proportion weighted summation is carried out on reflection coefficients of all wavelength bands, and a Stokes vector corresponding to the limited bandwidth is obtained; establishing an ellipsometric angle model based on the Stokes vector, and calculating corresponding model ellipsometric angle data; and iteratively adjusting the optical parameters of the sample through a nonlinear fitting algorithm to minimize the difference between the model ellipsometric angle data and the measurement ellipsometric angle data, thereby extracting the optical parameters of the sample. According to the method, by establishing the physical model, the depolarization effect caused by the limited bandwidth of the light source can be effectively corrected, the extraction precision of the optical parameters of the sample is improved, and the modeling and calculation processes are simplified.

The invention discloses a method and system for testing and analyzing magneto-optical parameters of a magnetic multilayer film, and belongs to the technical field of photoelectron data analysis, and the method comprises the following steps: carrying out an ellipsometry test on a to-be-tested magnetic multilayer film sample to obtain ellipsometry parameters of the sample; constructing an optical model according to the structure of the magnetic multilayer film sample to be tested, and performing fitting calculation by combining an optical theory and the ellipsometric parameters obtained by testing to obtain optical property parameters of each layer of film in the sample; the method comprises the following steps: carrying out a magneto-optical ellipsometry test on a to-be-tested magnetic multilayer film sample to obtain a reflection coefficient of the sample in an unmagnetized state and a magneto-reflection coefficient caused by a Kerr effect, deriving a total propagation matrix of light in the magnetic multilayer film sample, and calculating to obtain a Jones matrix of the sample; and calculating the magneto-optical coupling coefficient of each layer of film according to the Jones matrix, the reflection coefficient, the magneto-reflection coefficient and the optical property parameter of each layer of film. According to the invention, accurate characterization of magneto-optical parameters of magnetic multilayer films with various thicknesses, various materials and various layer numbers can be realized.

The invention relates to the technical field of ellipsometers, and discloses a variable azimuth angle wave plate ellipsometer and a measuring method thereof, the wave plate ellipsometer comprises: a polarizing arm modulation unit comprising a light source and a polarizer, and the polarizer is located at the right side of the light source; the sample table is used for placing a to-be-tested sample; the polarization detection arm modulation unit comprises a compensator and a polarization analyzer; and the image sensor is used for sampling the emergent light beam of the polarization analyzer to obtain a light intensity modulation image. According to the variable azimuth angle wave plate ellipsometer, the structure is simple and stable, rapid measurement can be achieved, in-situ detection can be achieved, the wave plate unit is adopted in the polarization detection arm modulation unit, the flexibility and adaptability of measurement are improved, the wave plate azimuth angle can be flexibly adjusted according to different sample characteristics, light modulation of various samples is more effective, and various measurement requirements are met.