12 results about "Reflectivity measurement" patented technology

An anti-glare film is attached on a surface of a display, and includes an anti-glare layer. The anti-glare layer is set to have a sparkle value falling within a range from 6 to 10, which is defined based on a value of a standard deviation of luminance distribution of the display under a state in which the anti-glare film is attached on the surface of the display, a value of specular gloss of 30% or less, which is measured with 60-degree specular gloss, a value of transmission image clarity of 60% or less, which has an optical comb of 0.5 mm, and a haze value of 50% or less. Consequently, satisfactory anti-glare property can be provided while appropriately suppressing sparkle on the display.

A method of measuring a thickness of a semiconductor structure includes illuminating the semiconductor structure with the incoherent, uncollimated light from at least one light source, and capturing, using a camera, at least one image of the semiconductor structure illuminated by the light from the light source. The at least one image includes separate first color, second color, and third color images, the first, second, and third colors being different from each other. Thickness maps are produced for at least two layers of the semiconductor structure based on the first color, second color, and third color images and reference first color, second color, and third color images of a reference silicon wafer.

A distance and reflectivity measurement method, apparatus, storage medium, and lidar are disclosed. The lidar acquires an echo signal from light reflected by a target object. A distance threshold measures the echo signal to determine the target's distance relative to the lidar. A reflectivity threshold, higher than the distance threshold, measures the echo signal to determine the target's reflectivity. Using separate thresholds, with the reflectivity threshold being higher, provides high accuracy for distance measurement and high differentiation for reflectivity measurement, improving the overall accuracy of calculating both distance and reflectivity for the target object.

A distance and reflectivity measurement method, apparatus, storage medium, and lidar are disclosed. The lidar acquires an echo signal from light reflected by a target object. A distance threshold measures the echo signal to determine the target's distance relative to the lidar. A reflectivity threshold, higher than the distance threshold, measures the echo signal to determine the target's reflectivity. Using separate thresholds, with the reflectivity threshold being higher, provides high accuracy for distance measurement and high differentiation for reflectivity measurement, improving the overall accuracy of calculating both distance and reflectivity for the target object.

This application discloses a method, apparatus, storage medium, and lidar for measuring distance and reflectivity. Specifically, it applies to a lidar that obtains an echo signal based on the echo light reflected from a target object. The echo signal is an electrical signal corresponding to the echo light. The application measures the echo signal based on both a distance threshold and a reflectivity threshold. The distance threshold determines the distance of the target object relative to the lidar, and the reflectivity threshold determines the reflectivity of the target object. The reflectivity threshold is higher than the distance threshold. By using different threshold values ​​to determine the distance and reflectivity of the target object, and with the reflectivity threshold being higher than the distance threshold, this application achieves higher ranging accuracy and higher reflectivity discrimination when measuring the reflectivity of the target object, thereby improving the accuracy of distance measurement and reflectivity calculations.

The method relates to a method for operating an EUV reflectometer (1) comprising at least one controllable radiation source (4) and a radiation sensor (17), wherein, to perform a reflectivity measurement, a light beam (10) is projected by means of the radiation source (4) onto a first test area of ​​a surface of a test specimen (3) to be examined, and the light beam (16) reflected from the surface is detected by means of the radiation sensor (17) in order to determine the reflectivity of the surface in the first test area. It is provided that the radiation sensor (17) is moved along the light beam (16) reflected from the surface to a first distance (b) relative to the test specimen (3), at which the radiation sensor (17) detects a reflectivity maximum of the reflected light beam (16), and that the reflectivity measurement is only then carried out.

A temperature increase detection system (300) for an environment consisting of several distinct zones (Z1-Z10), the system comprising a branched cable network with several branches (CS1-CS10), each intended to be deployed in one of the zones, and at least one reflectometry device (DR1) connected to one end of at least one branch of the network and configured to: Acquire an initial reflectometry measurement corresponding to an initial state of said branched cable network; Acquire a current reflectometry measurement corresponding to a current state of said branched cable network; Compare the current reflectometry measurement to the initial reflectometry measurement to infer a temperature increase on one of the branches of said network. Figure 3

A reflectance measurement part measures the reflectance of a back surface of a semiconductor wafer. An imaging parameter of a camera is adjusted based on the measured reflectance. The imaging parameter includes exposure time and sensitivity of the camera. The camera with the adjusted imaging parameter images the back surface of the semiconductor wafer to determine the presence or absence of a flaw from the obtained image data. The camera is able to perform appropriate imaging in accordance with the reflectance of the back surface of the semiconductor wafer. Thus, a flaw in the back surface of the semiconductor wafer is detected with reliability even if the reflectance of the back surface is varied due to the deposition of a thin film on the back surface.

A method and system for determining radar-compatible coatings are provided. In one example, the method includes acquiring a reflectance measurement of a target coating to characterize its color. One or more candidate formulations are generated to determine color matches with the target coating's color. A corresponding color and corresponding radar property are predicted for each of the one or more candidate formulations. A radar-compatible coating composition that is visually identical or substantially similar to the target coating is generated. The generation of the radar-compatible coating composition is at least in part based on the corresponding color and corresponding radar property of one of the one or more candidate formulations.