62 results about "Reflectivity measurement" patented technology

The invention discloses a microwave link-weather radar combined rainfall inversion method based on Z-R relation adaptive adjustment, and the method comprises the steps: defining a related parameter set of microwave link rainfall estimation and weather radar reflectivity measurement in observation time, and carrying out the matching and space-time averaging processing, and obtaining rainfall intensity-radar reflectivity characteristics; fitting a radar reflectivity-rainfall intensity relation within observation time by using a least square method based on the rainfall intensity-radar reflectivity characteristics; according to the radar reflectivity-rainfall intensity relation sample of the known position, calculating the spatial distribution of the radar reflectivity-rainfall intensity relation in the research area by using an inverse distance weighted interpolation method; and according to the spatial distribution of the radar reflectivity-rainfall intensity relationship within the observation time and the average reflectivity factor measured by the radar, calculating to obtain a spatial distribution result of the accumulated rainfall within the observation time. According to the invention, the accuracy of regional rainfall monitoring is effectively improved.

An optical sensor device configured for use in combination with a fluid flowing through a tubing, the optical sensor device includes a light source configured to emit a light, with at least a portion of the light being exposed to a fluid in the tubing and reflected, an optical sensor configured to receive at least a portion of the reflected light and analyze at least a portion of the received reflected light to determine a reflectance measurement, and a controller configured to correlate the reflectance measurement to an input particulate level and generate an output indicative of the fluid flow rate corresponding to the reflectance measurement. Also disclosed is a method of optically measuring fluid flow rate in a fluid processing system including optically monitoring fluid flow through a transparent portion of a tubing by measuring light reflectance of particles in the fluid.

The invention discloses a Mo / Si reflector reflectivity measurement system and method based on an acousto-optic monochromator, the system comprises an EUV light source, an EUV energy meter, a monochromator and an EUV reflectivity meter, the EUV light source is used as a detection light source, the EUV energy meter is used for monitoring the fluctuation condition of the EUV light source and providing a light source fluctuation calibration coefficient for reflectivity measurement, the monochromator screens light based on the acousto-optic effect of an acousto-optic crystal, and the EUV reflectivity meter is used for measuring the reflectivity of the EUV light source. It is ensured that the EUV reflectivity meter only receives light with the required wavelength; the EUV reflectivity meter serves as a measurement space of a Mo / Si reflector sample, mechanical design is adopted, the size of the EUV reflectivity meter is reduced, meanwhile, a collimation optical system is added, and the accuracy of a measurement result is improved. The invention further provides a measurement method, accurate measurement of the angular spectrum and the reflection spectrum of the Mo / Si reflector is achieved, an effective technology is provided for measurement and development of the Mo / Si reflector, and therefore the EUV photoetching technology is continuously improved.

The present invention proposes a fitting method for the ultra-low reflectivity of optical coatings to solve the technical problem of large measurement errors in the ultra-low reflectivity of optical coatings. The steps of the present invention are as follows: simulating and calculating the effective refractive index of the waveguide of an uncoated FP laser chip at both ends to obtain the reflectivity of the uncoated FP laser chip and air; performing a P-I test on the uncoated FP laser chip at both ends to obtain a threshold current; performing an ultra-low optical coating on one end of the uncoated FP laser chip to obtain a laser chip with one end coated; applying different current values ​​to the laser chip with one end coated according to the threshold current and testing the corresponding spectral curves; using the spectral curves under different current values, the reflectivity of the ultra-low optical coating is obtained according to the reflectivity fitting. The present invention can accurately estimate the ultra-low reflectivity of the optical coating, playing a decisive role in the optimization of SLD and SOA products.

The invention discloses a plant leaf reflectivity detector, and aims to accurately measure the reflectivity of a plant leaf so as to evaluate the nitrogen content and guide scientific fertilization. The detector is composed of a main shell, an auxiliary shell, a main control board, a display module, an acquisition mechanism, a handheld shell and the like, an optical system is built through a mechanical structure system, an electrical control system controls AD acquisition, LED start and stop and optical filter wheel rotation, and reflectivity measurement is achieved. The uniquely designed optical filter wheel is made of aluminum alloy, so that the stable operation of the system is ensured; the shell is made of resin materials, so that protection performance is improved, and portability is achieved. The operation process comprises the steps of startup initialization, zero calibration, measurement of a standard whiteboard and plant leaves, and data query and analysis. In addition, the detector has maintenance measures such as regular cleaning, battery maintenance and safe storage, and long-term stable operation is ensured.

An anti-glare film is attached on a surface of a display, and includes an anti-glare layer. The anti-glare layer is set to have a sparkle value falling within a range from 6 to 10, which is defined based on a value of a standard deviation of luminance distribution of the display under a state in which the anti-glare film is attached on the surface of the display, a value of specular gloss of 30% or less, which is measured with 60-degree specular gloss, a value of transmission image clarity of 60% or less, which has an optical comb of 0.5 mm, and a haze value of 50% or less. Consequently, satisfactory anti-glare property can be provided while appropriately suppressing sparkle on the display.

The invention discloses an infrared temperature measurement error compensation method and system in a dust environment, and the method comprises the following steps: collecting an infrared image of power transmission and transformation equipment in the dust environment through a thermal infrared imager, and synchronously recording environment parameters, including environment temperature, humidity, reflectivity / measurement distance and dust particle physical characteristics; preprocessing the infrared image, including graying, noise filtering and dust coverage area segmentation, classifying according to dust interference types, and extracting statistical characteristics of the infrared image; the method has the beneficial effects that the precision advantage is as follows: experimental data shows that when the dust concentration is 500mg / m < 3 >, MAE is reduced to + / -1.5 DEG C from + / -4.5 DEG C of a traditional method and is increased by 66.7%; dynamic adaptability: model online updating and threshold dynamic adjustment ensure stability (error fluctuation is less than + / -0.8 DEG C) under sudden dust or load fluctuation; and the operation and maintenance efficiency is as follows: the defect positioning time is shortened from 15 minutes to 3 minutes by AR assistance, and the inspection efficiency is improved by 80%.

Embodiments of the present disclosure relate to reflectivity sensing using a time-of-flight camera. Techniques for obtaining reflectivity measurements using a time-of-flight (ToF) measurement device. An example method includes: obtaining distance measurements using one or more pixels in a ToF sensor; obtaining intensity measurements corresponding to the distance measurements using one or more pixels; and calculating a reflectivity value based on the distance measurements, the intensity measurements, and a reflectivity calibration factor. In some embodiments, the calibration distance is obtained as follows: by measuring a reference distance to a calibration surface using a reference pixel in the ToF sensor and obtaining the calibration distance from the measured reference distance. In some embodiments, the reflectivity calibration factor is obtained as follows: by obtaining a reference intensity corresponding to the reference distance using the reference pixel and calculating the reflectivity calibration factor as a function of the reference intensity and the viewing angles of one or more pixels.

The application discloses a reflectivity measuring method, a laser radar device and a storage medium, and relates to the technical field of reflectivity measurement. The reflectivity measuring method comprises the following steps: acquiring the distance between a laser radar device and a measured object and the characteristic parameters of a return signal; acquiring a first preset characteristic relationship; and calculating the reflectivity of the measured object according to the first preset characteristic relationship. The first preset characteristic relationship is a corresponding relationship between the characteristic parameters and the reflectivity which is stored in advance. The measured object does not need to be moved multiple times to obtain different distances. According to the acquired first preset characteristic relationship, the reflectivity of the measured object at any distance can be directly calculated according to the characteristic parameters and the distance. The measuring method is simple, the calibration process is simple, and the measuring efficiency of the surface reflectivity of the measured object is improved.

The application provides an optical thin film reflectivity measurement system based on optical interference, comprising: a fiber end surface reflectivity test subsystem, which collects multiple sets of interference spectra by changing the cavity length distance between two fiber end surfaces and calculates the corresponding cavity length; fits the multiple sets of interference spectra based on a double-beam interference formula and calculates the measured reflectivity of the fiber end surface; compares the measured reflectivity with the standard reflectivity of the fiber end surface directly measured by a spectrometer, and obtains a relationship formula of the reflectivity compensation coefficient-cavity length through polynomial fitting; a graphene thin film reflectivity test subsystem, which collects multiple sets of interference spectra by changing the distance between the aligned single-mode optical fiber and the optical thin film, fits the interference spectra based on a double-beam interference formula, and thus calculates the measured reflectivity of the optical thin film; and a correction subsystem, which corrects the measured reflectivity of the optical thin film based on the expression of the reflectivity compensation coefficient to obtain the corrected reflectivity of the optical thin film. A corresponding measurement method is also disclosed.

The application discloses a laser chip end face reflectivity monitoring method and relates to the technical field of computer processing.The method comprises the following steps: S01, obtaining a chip end face to be monitored and inputting the chip end face to a preset micro area division model to obtain a plurality of micro areas of the laser chip end face and recording preset reflectivity standard values of each micro area; S02, using a high-precision reflectivity measuring device to obtain actual reflectivity measuring values of each micro area; and S03, determining reflectivity deviation conditions of each micro area according to a comparison between the actual reflectivity measuring values and the preset reflectivity standard values of each micro area and integrating micro area information containing the reflectivity deviation conditions into multi-area reflectivity distribution information.The application combines gridded reflectivity space analysis with multi-source data fusion technology and realizes micron-level precision monitoring of a chip patch coverage range.

1. Name of the Design Product: Radar Coating Material Vertical Reflectivity Measuring Device. 2. Use of the Design Product: It is used by grass-roots troops, mainly to achieve in-situ measurement of the vertical reflectivity of radar coating materials, and it is a ground support device for performance inspection under the use conditions of an uncontrolled environment site. 3. Design Key Points of the Design Product: Lies in the shape. 4. Picture or Photograph that Best Illustrates the Design Key Points: Perspective View 1.

The application discloses a coated fuel particle optical anisotropy detection method and device and computing equipment, and the method comprises the following steps: traversing a plurality of first field metallographic section images covering the whole metallographic sample to determine the image position information of each coated fuel particle and perform coordinate splicing to obtain a global coordinate map; based on the global coordinate map, the second field metallographic section image of each coated fuel particle is collected one by one; the second field metallographic section image is coated by a semantic segmentation model to define the coating, and then the coated fuel particle is subjected to measurability analysis to screen a plurality of target coated fuel particles; based on the layer definition image, the dense pyrolysis carbon layer region is extracted from the second field metallographic section image of the target coated fuel particle, and the measured region is selected therefrom to perform reflectivity measurement, so as to determine the optical anisotropy of the target coated fuel particle. The application can realize the automation and intelligentization of the coated fuel particle optical anisotropy detection process.

A method for measuring the thickness of a semiconductor structure includes illuminating the semiconductor structure with non-coherent and non-parallel light from at least one light source, and acquiring at least one image of the semiconductor structure illuminated by the light source using a camera. The at least one image includes separate images of a first color, a second color, and a third color, where the first, second, and third colors are distinct from each other. A thickness map is generated for at least two layers of the semiconductor structure based on the images of the first, second, and third colors and reference images of a reference silicon wafer in the first, second, and third colors.

A method of measuring a thickness of a semiconductor structure includes illuminating the semiconductor structure with the incoherent, uncollimated light from at least one light source, and capturing, using a camera, at least one image of the semiconductor structure illuminated by the light from the light source. The at least one image includes separate first color, second color, and third color images, the first, second, and third colors being different from each other. Thickness maps are produced for at least two layers of the semiconductor structure based on the first color, second color, and third color images and reference first color, second color, and third color images of a reference silicon wafer.

The utility model relates to the technical field of sampling devices, and provides an automatic sampling device for measuring the reflectivity of a plate surface of a continuous annealing line, which comprises a movable seat movably arranged on the ground; the sampling piece is movably arranged on the moving seat, the sampling piece is provided with a mounting part, an adhesive tape is mounted on the mounting part, and the sampling piece is configured to be capable of driving the adhesive tape to approach different positions of the steel belt after moving; the push block is slidably arranged on the sampling piece, and the push block is configured to be capable of pushing the adhesive tape to adhere to the steel belt after sliding. By means of the technical scheme, the technical problems that in the prior art, manual pasting sampling consumes manpower, and the labor intensity is increased are solved. And the device can automatically sample different positions of the steel belt due to the moving and adjusting functions of the moving seat and the sampling piece.

A kind of weak reflection grating array reflectivity measurement method, using optical time domain reflectometer OTDR, including direct current light source, modulator, erbium-doped fiber amplifier, circulator, photoelectric detector, data acquisition card, data analysis processing module and display module;1) weak reflection grating array is accessed to above-mentioned measurement system, the weak reflection grating array to be measured is accessed to the second port of circulator;2) the output port of laser is connected with the input port of modulator;Laser output direct current light signal is modulated into probe light pulse by modulator, is amplified after being amplified by erbium-doped fiber amplifier, forms probe signal by entering the weak reflection grating array to be measured through circulator;3) the input port of photoelectric detector is connected with the third port of circulator;The input port of data acquisition card is connected with the output port of photoelectric detector;It is sent to data acquisition card by photoelectric detector output port;4) the output port of data acquisition card is connected with data analysis processing module.

A temperature increase detection system (300) for an environment consisting of several distinct zones (Z1-Z10), the system comprising a branched cable network with several branches (CS1-CS10), each intended to be deployed in one of the zones, and at least one reflectometry device (DR1) connected to one end of at least one branch of the network and configured to: Acquire an initial reflectometry measurement corresponding to an initial state of said branched cable network; Acquire a current reflectometry measurement corresponding to a current state of said branched cable network; Compare the current reflectometry measurement to the initial reflectometry measurement to infer a temperature increase on one of the branches of said network. Figure 3

A distance and reflectivity measurement method, apparatus, storage medium, and lidar are disclosed. The lidar acquires an echo signal from light reflected by a target object. A distance threshold measures the echo signal to determine the target's distance relative to the lidar. A reflectivity threshold, higher than the distance threshold, measures the echo signal to determine the target's reflectivity. Using separate thresholds, with the reflectivity threshold being higher, provides high accuracy for distance measurement and high differentiation for reflectivity measurement, improving the overall accuracy of calculating both distance and reflectivity for the target object.

A distance and reflectivity measurement method, apparatus, storage medium, and lidar are disclosed. The lidar acquires an echo signal from light reflected by a target object. A distance threshold measures the echo signal to determine the target's distance relative to the lidar. A reflectivity threshold, higher than the distance threshold, measures the echo signal to determine the target's reflectivity. Using separate thresholds, with the reflectivity threshold being higher, provides high accuracy for distance measurement and high differentiation for reflectivity measurement, improving the overall accuracy of calculating both distance and reflectivity for the target object.

When measuring a reflectivity of an object for measurement light, initially the object and a reflectivity measurement apparatus are provided. The latter includes a measurement light source, an object holder for holding the object and a spatially resolving detector for capturing measurement light reflected by the object. A measurement light beam impinges on a section of the object within a field of view of the measurement apparatus. The reflected measurement light coming from the impinged-upon section of the object is captured. A surface area of the captured section is at most 50 μm×50 μm. The measurement is performed by the detector. Next, at least one reflectivity parameter of the object is determined on the basis of an intensity of the captured measurement light. The result is a measurement method and a metrology system operating therewith, whereby reflectivities in particular of very finely structured objects, such as lithography masks, can be measured with sufficient precision.

The invention belongs to the field of large-aperture spherical reflector reflectivity measurement, and discloses a spherical reflector reflectivity automatic measurement system and method. The method comprises the following steps: arranging a tray and a multi-dimensional mobile platform in a black box; a light source and a light intensity detection unit are carried on the multi-dimensional mobile platform; a spherical reflector to be measured is placed on the tray; for each to-be-detected point position on the spherical reflector, the positions of the light source and the light intensity detection unit are adjusted through the multi-dimensional mobile platform, so that a light beam emitted by the light source is incident to the current to-be-detected point position, the light intensity detection unit is used for detecting reflected light of the light beam reflected by the current to-be-detected point position, and the reflected light intensity is obtained; and obtaining the reflectivity of the current point location to be measured according to the incident light intensity and the reflected light intensity. According to the invention, not only can the reflectivity of the spherical reflector be automatically measured with high precision and the measurement efficiency be improved, but also the reflectivity of the spherical reflector can be directly measured and the accuracy is improved.

The invention discloses a laser chip end face reflectivity monitoring method, and relates to the technical field of computer processing, and the method comprises the following steps: S01, obtaining a to-be-monitored chip end face, and inputting the to-be-monitored chip end face to a preset microscopic region division model to obtain a plurality of microscopic regions related to the laser chip end face, recording a preset reflectivity standard value of each microcosmic area; s02, acquiring an actual reflectivity measurement value of each microscopic area by using high-precision reflectivity measurement equipment; and S03, determining the reflectivity deviation condition of each microscopic area according to the comparison between the actual reflectivity measurement value of each microscopic area and a preset reflectivity standard value, and integrating the information of each microscopic area containing the reflectivity deviation condition into multi-area reflectivity distribution information. According to the method, gridding reflectivity space analysis and a multi-source data fusion technology are combined, and micron-level precision monitoring of the chip patch coverage range is achieved.

This application provides a method, apparatus, electronic device, and medium for determining sample deformation information, relating to the field of photothermal detection technology. The method includes: after the sample surface of the sample to be tested is excited by pump light and a probe light detects any point on the excited sample surface, acquiring the difference signal between the signal light and the reference light determined by the detection device and converted into electrical signals; processing the difference signal using a preset algorithm to determine the change in reflectivity of an SPR element (Surface Plasmon Resonance Optical Element); determining the change in reflection angle corresponding to the change in reflectivity of the SPR element based on the correspondence between the reflectivity of the configured SPR element and the reflection angle of the probe light on the sample to be tested; and determining the deformation information of the corresponding point on the sample surface of the sample to be tested based on the change in reflection angle. This method utilizes an SPR element to achieve direct conversion between the reflectivity measurement of the sample to be tested and surface deformation information, ensuring the accuracy of deformation information measurement.

This application discloses a method, apparatus, storage medium, and lidar for measuring distance and reflectivity. Specifically, it applies to a lidar that obtains an echo signal based on the echo light reflected from a target object. The echo signal is an electrical signal corresponding to the echo light. The application measures the echo signal based on both a distance threshold and a reflectivity threshold. The distance threshold determines the distance of the target object relative to the lidar, and the reflectivity threshold determines the reflectivity of the target object. The reflectivity threshold is higher than the distance threshold. By using different threshold values ​​to determine the distance and reflectivity of the target object, and with the reflectivity threshold being higher than the distance threshold, this application achieves higher ranging accuracy and higher reflectivity discrimination when measuring the reflectivity of the target object, thereby improving the accuracy of distance measurement and reflectivity calculations.

The present disclosure provides a reflectivity calculation method and device, electronic equipment and storage medium, relating to the technical field of radar, which comprises: obtaining a measurement distance according to a target object echo signal, obtaining a theoretical reference set corresponding to the measurement distance, the theoretical reference set comprising theoretical echo energy of a plurality of calibration boards with different preset reflectivities at the measurement distance; obtaining an actual echo energy according to the echo signal; determining a numerical interval in which the actual echo energy is located in the theoretical reference set; and determining the reflectivity of the target object according to the actual echo energy and the numerical interval. The present disclosure realizes the measurement of the reflectivity of a long-distance target object, and can obtain an accurate reflectivity of the target object through calculation even if the entire ranging range of the laser radar is not calibrated, without the need for an extra large calibration site, which is conducive to reducing the site cost required for target object reflectivity calculation and improving the accuracy of target object reflectivity measurement.

The method relates to a method for operating an EUV reflectometer (1) comprising at least one controllable radiation source (4) and a radiation sensor (17), wherein, to perform a reflectivity measurement, a light beam (10) is projected by means of the radiation source (4) onto a first test area of ​​a surface of a test specimen (3) to be examined, and the light beam (16) reflected from the surface is detected by means of the radiation sensor (17) in order to determine the reflectivity of the surface in the first test area. It is provided that the radiation sensor (17) is moved along the light beam (16) reflected from the surface to a first distance (b) relative to the test specimen (3), at which the radiation sensor (17) detects a reflectivity maximum of the reflected light beam (16), and that the reflectivity measurement is only then carried out.

The present invention relates to a method and a system for producing an electrically conductive layer with as homogeneous, predetermined, or defined locally different functionality as possible, in particular electrical conductivity. In the method, layer material is applied to a surface and converted into a preliminary electrically conductive layer with higher electrical conductivity by exposure, preferably to at least one energetic beam. The preliminary electrically conductive layer is then spatially resolved with at least one THz beam of continuous THz radiation. A spatially resolved electrical conductivity of this layer is determined from a reflectivity measurement of the THz beam at the preliminary electrically conductive layer.If areas in the preliminary electrically conductive layer are identified that exhibit either too low or too high electrical conductivity, these areas are then locally treated with the energetic beam to modify the electrical conductivity in order to achieve the most homogeneous, predefined, or locally variable functionality possible in the electrically conductive layer. This process enables the production of high-quality electrically conductive layers on an industrial scale.

A two-dimensional deep ultraviolet (DUV) reflectivity map of an extreme ultraviolet (EUV) pellicle is acquired using a DUV reflectance measurement assembly having a DUV light source and a DUV spectrophotometer. A representation of the two-dimensional DUV reflectivity map may be displayed. Additionally or alternatively, it may be determined whether the EUV pellicle is usable for EUV lithography without a dynamic gas lock DUV light-reflective membrane by analyzing the two-dimensional DUV reflectivity map, and outputting an indication of the determination. In response to a determination that the EUV pellicle is usable, the EUV pellicle may be mounted on an EUV photolithography mask to form an EUV mask assembly and EUV photolithography performed using the EUV mask assembly to form a latent image of a pattern of EUV reflective and absorbing regions of the photomask on and / or in an EUV light-sensitive photoresist layer disposed on a surface of a semiconductor wafer.

The invention provides an out-of-focus correction method and system for angle resolution scattering measurement based on a planar waveguide. The method comprises the following steps: constructing an angle resolution scattering measurement device; preparing a planar waveguide sample; a planar waveguide back focal plane image is collected through an angle resolution scattering measurement device, out-of-focus distortion compensation is achieved based on feature dark ring recognition and resonance angle calculation, and a correction incident angle is obtained; and establishing a compensation function by taking the corrected incident angle as a standard and combining the reflection characteristics of the reference sample, generating a compensation parameter table through mathematical fitting, and performing out-of-focus effect compensation on the reflectivity of the target sample based on the compensation parameter table to obtain the reflectivity of the target sample after out-of-focus correction. According to the method, defocus angle distortion compensation is realized through feature dark ring recognition, a reflectivity measurement error compensation mechanism is established in combination with the reflection characteristics of the reference sample, and the measurement precision of the nano-film is improved.