In the case where measurement/inspection of a wafer is performed in a measurement/inspection instrument before and after exposure is performed in an exposure apparatus, various kinds of conditions of the exposure apparatus and the measurement/inspection instrument such as environment in the apparatus/instrument, a measurement condition of an alignment system a measurement condition of an AF measurement device, a wafer grid, and image distortion are made to be matched. In particular, in accordance with a processing state of the exposure apparatus and a coater developer, a measurement result of a film, and the like, exclusion of a mark for overlay error measurement, adjustment of the measurement condition and correction of the measurement result, adjustment of the environment, correction of the measurement result according to the environment, and adjustment of pattern defect inspection are performed. Further, in calibration processing, aberration of a projection optical system of an exposure apparatus that transfers a pattern on a wafer for calibration, and the like are also taken into consideration. Accordingly, the yield of device production can be improved.