The invention provides a
mask and an
overlay error measurement method, and relates to the technical field of detection. The
mask plate comprises a test pattern structure arranged in the middle area of the
mask plate, the test pattern structure is used for forming an
overlay mark on a
wafer, and the test pattern structure comprises a first
overlay pattern group, a first reference pattern group, a second overlay pattern group and a second reference pattern group which are sequentially arranged in the circumferential direction of a rotation center, the first reference pattern group and the second reference pattern group are of a
central symmetry structure, and marks, mapped on the
wafer, of the first overlay pattern group and the second overlay pattern group are arranged in a mutually offset mode and do not coincide with the marks, mapped on the
wafer, of the first reference pattern group and the second reference pattern group. According to the invention, a plurality of different pattern groups are integrated on a single mask plate at the same time, and three overlay layer marks can be directly formed in the quadrant region corresponding to the wafer, so that more effective overlay mark image information is obtained, and the detection precision of the overlay error is improved.