16507results about "Microlithography exposure apparatus" patented technology

To provide a chemically amplified positive resist composition that can form a resist film capable of forming a pattern which has extremely high resolution, small LER, and excellent rectangularity and in which the influence of development loading and development residue defects are suppressed, and to provide a resist pattern forming method using the chemically amplified positive resist composition.SOLUTION: The chemically amplified positive resist composition contains: (A) a photoacid generator of a specific structure which generates an acid by the action of high-energy rays; and (B) a base polymer containing a polymer which increases its solubility in an alkaline aqueous solution by the action of an acid and contains a repeating unit represented by the following formula (B1).SELECTED DRAWING: None

To provide a resist composition from which a resist pattern having good CD uniformity can be produced.SOLUTION: A carboxylic acid generator and the resist composition contain a carboxylate represented by formula (I) [where X1 represents *-CO-O-, *-O-CO-, *-O-CO-O- or *-O-; L1 represents a single bond or an alkanediyl group, wherein -CH2- contained in the alkanediyl group may be substituted with -O- or -CO-; R1 represents an alicyclic hydrocarbon group having a halogen atom or a haloalkyl group, wherein -CH2- contained in the alicyclic hydrocarbon group may be substituted with -O-, -S-, -CO- or -SO2-; R2 represents a halogen atom, a nitro group, a cyano group or a hydrocarbon group which may have a substituent, wherein -CH2- contained in the hydrocarbon group may be substituted with -O-, -CO- or the like; m2 represents an integer of 1-4; and Z1+ represents an organic cation].SELECTED DRAWING: None

To provide an onium salt which is used for a chemically amplified resist composition having excellent solvent solubility, high sensitivity, high contrast, and excellent lithographic performances such as exposure latitude and linewidth roughness, in photolithography using high-energy radiation, a chemically amplified resist composition comprising the onium salt as a photoacid generator, and a pattern forming process using the chemically amplified resist composition.SOLUTION: An onium salt having the following formula (1) is provided. [R1-R12 independently represent H, halogen, or a C1-C20 hydrocarbyl group optionally including a heteroatom; one of R13 and R14 represents a substituent having a terminal sulfonic acid anion; the other represents H, halogen, or a C1-C20 hydrocarbyl group optionally including a heteroatom; and Z+ represents an onium cation.]SELECTED DRAWING: None

The present disclosure relates to a film formed with an organometallic precursor and an organic co-reactant, as well as methods for forming and employing such films. In particular embodiments, the films can be incubated after exposure to radiation, which can provide enhanced material differences between the exposed and unexposed regions. In non-limiting embodiments, the radiation can include extreme ultraviolet (EUV) or deep ultraviolet (DUV) radiation.

To provide a resist composition which achieves higher sensitivity and can form a resist pattern with reduced LWR.SOLUTION: The resist composition contains: a resin component (A1) whose solubility in a developer changes by the action of an acid; and a compound (D0) represented by the following general formula (d0-1). (In the formula, Cy1 represents a cyclic group containing an aliphatic ring; Cy2 represents a benzene ring or a naphthalene ring; Xd01 represents an iodine atom or a bromine atom; Rd01 and Rd02 represent substituents; Ld01 represents a divalent linking group; Ld02 represents a divalent linking group or a single bond; m01 represents an integer of 1 or more; n01 and n02 represent integers of 0 or more; Mmd+ represents an organic cation; and md represents an integer of 1 or more.)SELECTED DRAWING: None

To provide a resist composition which enhances both effects of roughness reduction and film loss suppression in resist pattern formation.SOLUTION: The resist composition contains a resin component having a constituent unit derived from a compound represented by formula (a0-m0). W0 represents a polymerizable group-containing group; Rar1 represents an optionally substituted aromatic group; L01 represents a divalent linking group or a single bond; Vb0 represents an alkylene group, a fluorinated alkylene group or a single bond; R0 represents a fluorinated alkyl group, a fluorine atom or a hydrogen atom; L02 represents a (p+1)-valent linking group or a single bond; p represents an integer of 1 or more, provided that p is 1 when L02 represents a single bond; Rar2 represents an optionally substituted aromatic group; and q represents an integer of 1 or more.SELECTED DRAWING: None

The present invention uses a resist composition that contains a base material component that has a structural unit derived from a compound represented by general formula (a0-1). In formula (a0-1), W01 represents a polymerizable group–containing group, La01 represents a divalent linking group or a single bond, and I represents an iodine atom. Ra02 represents a substituent other than an iodine atom. Ya01 represents a divalent linking group or a single bond. Va01 represents a single bond, an alkylene group, or a fluorinated alkylene group. Ra01 represents a hydrogen atom, a fluorine atom, or a fluorinated alkyl group. Mm+ is an m-valent cation.

To provide a compound, an acid generator, a resist composition, and a resist pattern forming method which reduce an environmental load, achieve higher sensitivity, and can form a resist pattern excellent in lithographic characteristics.SOLUTION: The resist composition, which generates an acid upon exposure and whose solubility in a developer changes by the action of an acid, contains: a base component (A) whose solubility in a developer changes by the action of an acid; an acid generator component (B) which generates an acid upon exposure; and an acid diffusion controller component (D). The acid generator component (B) contains a compound represented by general formula (b1-1) described in the specification.SELECTED DRAWING: None

To provide a resist composition which achieves higher sensitivity in forming a resist pattern and an improvement in lithographic characteristics such as roughness reduction of a pattern and has a wide process margin, a resist pattern forming method, and a copolymer useful for them.SOLUTION: The resist composition contains a resin component having a constituent unit derived from a compound represented by formula (a01-b) and a constituent unit derived from a compound represented by formula (a02-d). In the formulae, W01 and W02 each represent a polymerizable group-containing group; X01 and X02 each represent a divalent linking group or a single bond; and R0 represents a C1-5 fluorinated alkyl group, a fluorine atom or a hydrogen atom; provided that one or more of X01, X02, Mm+ and Nn+ contain an iodine atom.SELECTED DRAWING: None

To provide a salt which allows a resist pattern having good CD uniformity (CDU) to be produced, and a resist composition containing the same.SOLUTION: The salt is represented by formula (I) [where Q1 and Q2 each represent a fluorine atom or a perfluoroalkyl group; R1 and R2 each represent a hydrogen atom, a fluorine atom or a perfluoroalkyl group; z represents an integer of 0-6; X1 and X2 each represent -CO-O-, -O-CO-, -O-CO-O- or -O-; L1 represents a single bond or a substituted / unsubstituted hydrocarbon group; A1 represents an optionally substituted lactone ring; L2 represents a single bond or an alkanediyl group; R3 represents an aliphatic hydrocarbon group having an iodine atom, wherein a hydrogen atom contained in the group may be substituted with a fluorine atom or an alkyl group; and Z+ represents an organic cation].SELECTED DRAWING: None

The present disclosure relates to the use of a metal chelator to treat an exposed photoresist film. In particular embodiments, the metal chelator is employed to remove an interfacial area that is disposed between exposed and unexposed areas or disposed within an exposed area, thereby enhancing patterning quality.

The invention relates to the technical field of automatic equipment, and particularly discloses an EBL cooperative manipulator which comprises two multi-axis mechanical arms, a plurality of mechanical claws, a workbench and a flower basket transferring manipulator. The basket transfer manipulator is used for carrying baskets; the plurality of mechanical claws comprise a positioning claw, a fastening claw, a drawing claw, a sucking claw and a tray claw; after the two multi-axis mechanical arms are connected with the different mechanical claws respectively, the first cooperative operation and the second cooperative operation can be carried out, and fixing of the wafer and the silicon wafer is achieved. Therefore, according to the EBL cooperative manipulator provided by the scheme, different mechanical claws can be switched according to different operation requirements, fine operation such as substrate placement and position adjustment and heavy physical operation such as basket transfer can be carried out, the working intensity of workers can be reduced, and the working efficiency is improved. Meanwhile, the possibility that precise and expensive parts on the equipment are damaged is reduced, and the psychological burden of scientific researchers on ELB equipment operation is reduced.

The invention provides a processing method and system for reconstructing an LDI sub-pixel image through sparse compression and application, and the method comprises the steps: calculating a low-resolution to-be-exposed image corresponding to each phase structure in advance through a computer image compression algorithm; the low-resolution to-be-exposed images obtained through calculation are loaded to the digital micro-reflector according to the time sequence, and the display moment of each pattern is matched with the rotation position of the corresponding phase structure; coupling the pattern of the digital micro-mirror and the phase encoding mask in a frequency domain through a 4-f optical system, and reconstructing a high-resolution exposure pattern at a sub-pixel level by utilizing a diffraction effect; projecting a high-resolution light field of the reconstructed high-resolution exposure pattern to the surface of the photoresist, and forming a target circuit pattern by accumulating exposure dose; and the micro-nano structure with sub-pixel precision is obtained after development. The system comprises an image compression module, a pattern matching module and a pattern forming module. According to the invention, the manufacturing cost of the laser direct imaging equipment is reduced under the condition of the same precision.

The invention relates to the technical field of photoetching machine calibration, and discloses a photoetching machine calibration method, device and equipment based on multi-view vision, and the method comprises the following steps: carrying out imaging and phase sensitive detection analysis on a mask plane and a wafer plane through a four-path optical beam splitting system to obtain four groups of mask-wafer initial alignment position information; performing scanning white light interference edge enhancement processing to obtain three-dimensional surface contour data; performing wavelet transform processing on the three-dimensional surface contour data, and performing dynamic registration on the four-path optical beam splitting system to obtain multi-view visual feature registration data; a comprehensive error model including mechanical errors, optical errors and environmental errors is established, real-time correction and error compensation are carried out on a six-degree-of-freedom motion platform of the photoetching machine, a multi-view vision calibration result of the photoetching machine is obtained, the influence of environmental vibration and thermal drift on calibration precision is effectively eliminated, and the calibration accuracy of the photoetching machine is improved. The optical system is ensured to be always in the optimal imaging state, and the calibration precision is improved.

The invention relates to the technical field of high-end equipment manufacturing, and provides circuit board vertical left and right exchange frame digital exposure LDI equipment and an exposure system. The exposure assembly is arranged on the supporting seat and is used for exposing a workpiece; the first frame part is vertically arranged on the supporting seat, and is used for mounting a workpiece and enabling the workpiece to be vertical; the second frame part is vertically arranged on the supporting seat, and is used for mounting a workpiece and enabling the workpiece to be vertical; the driving assembly is used for driving the first frame part and the second frame part to move in the exposure scanning direction; and / or driving the exposure assembly to move in the exposure scanning direction. The workpiece is placed in the through hole in the vertical frame part, so that the workpiece and the frame part are both vertical, the workpiece does not need to be horizontally placed, the problems that ink on the workpiece is sucked out due to vacuumizing, and the exposure effect is poor are solved, the first frame part and the second frame part can be alternately exposed, and the exposure efficiency is improved.

Various embodiments herein relate to methods, apparatus, and systems for baking metal-containing on a semiconductor substrate in the presence of a reactive gas species. For example, the method may include receiving the substrate in a process chamber, the substrate having a photoresist layer thereon, where the photoresist layer includes a metal-containing photoresist material; flowing a reactive gas species from a gas source, through a gas delivery line, into the process chamber, and exposing the substrate to the reactive gas species in the process chamber; and baking the photoresist layer while the substrate is exposed to the reactive gas species.

As a high-performance resist material, a tin compound is provided which has properties such as solubility, hydrophobicity, and resist sensitivity with good balance. A tin compound includes a tin atom; an organic group R; and at least one of an oxo-ligand and a hydroxo-ligand. One molecule of the tin compound includes two or more types of organic group R and includes a Sn—O—Sn structure, and the organic group R has 1 to 30 carbon atoms.

The invention provides a diffractive optical element design and manufacturing integration method based on gray level laser direct writing photoetching, which comprises the following steps that: a manufacturing simulator and a wave optical simulator are established, and the manufacturing simulator represents the spatial frequency response of an optical system through a low-pass filtering model; a mapping relation between exposure dose and a developing result is established by combining nonlinear response of photoresist, and the wave optical simulator predicts optical performance by utilizing output of the manufacturing simulator and combining a wave optical theory; by setting initial manufacturing parameters and performing iterative optimization, the surface appearance of the photoresist is dynamically adjusted to be close to the target optical performance, the optimization process is combined with an automatic differential technology, a gradient optimization algorithm and a block optimization strategy, and the calculation efficiency is improved; and the optimized parameters are used for processing gray laser direct writing equipment to manufacture the diffractive optical element. The problem of manufacturing deviation caused by the optical proximity effect in the prior art can be solved, and meanwhile the overall performance of the diffraction optical element is remarkably improved.

The invention discloses a UV illumination control method and system for a reel-to-reel exposure machine. The method comprises the following steps: acquiring a real-time moving speed and a tension change value of a coiled material; when the tension change value is greater than the tension threshold value, predicting the deformation trend of the surface of the coiled material based on a nonlinear regression algorithm in combination with the real-time moving speed to obtain a deformation influence value; according to the deformation influence value, a PID control algorithm is adopted to adjust the UV light source, and a light intensity distribution value is obtained; according to the light intensity distribution value, a fuzzy control algorithm is adopted to calculate the output intensity requirement of the UV light source, and speed adjustment is carried out in combination with the real-time moving speed, so that optimized irradiation parameters are obtained; performing area judgment according to the optimized irradiation parameters to obtain an overexposure area and an underexposure area; and adjusting the intensity and distribution of the UV light source in the overexposure area and the underexposure area until the area exposure quality reaches a preset standard range. The method can realize real-time response regulation and control on tension and speed change of the coiled material, and solves the problem of non-uniform exposure dose.

A control device (100) for controlling an actuator (200) for actuating an optical element (310) of an optical system (4, 10), with an amplifier (110) which is configured to receive a supplied supply voltage (V1) at an input node (K1) and to provide a drive voltage (V2) for the actuator (200) at an output node (K2), and a supply device (120) coupled to the input node (K1) for providing the supply voltage (V1), which has a series connection (130) of a plurality N, with N ≥ 2, of DC / DC converters (131-133) for providing a respective DC voltage and a number M, with M ≥ 1, of further DC / DC converters (141) that can be connected in series to the series connection (130) for providing a DC voltage.

The invention relates to the technical field of printed circuit board manufacturing, in particular to a multiple equipartition prediction alignment method and system for an exposure machine, and the method comprises the following steps: S1, obtaining a plurality of image data under different exposure conditions through the exposure machine; s2, performing image correction on the identified fuzzy region through an inverse motion compensation algorithm; s3, calculating a superposition error between exposure images of each time, and carrying out preliminary correction on the error; s4, dynamically adjusting optical parameters of the exposure machine by utilizing a self-adaptive optical operator; s5, carrying out iterative fusion on the corrected image, and carrying out multi-time iterative averaging processing; and S6, transmitting the final alignment image data obtained in the step S5 to a control process of the exposure machine. According to the invention, by integrating motion data analysis, inverse motion compensation, a multiple equipartition prediction alignment algorithm and an optical parameter adaptive adjustment technology, the image alignment precision and definition in the PCB exposure process are significantly improved, so that high-quality PCB manufacturing is ensured.

The invention discloses an implementation method of a multi-chip high-density connection photoetching technology, an implementation method of a photoetching technology for multi-chip interconnection, a chip-level chip interconnection method, a manufacturing method of a mask plate line and photoetching equipment. The implementation method of the multi-chip high-density connection photoetching technology comprises the following steps: selecting a first mask plate to align and expose with a first original pattern unit in a first M * N chipset through a second alignment mark, and transferring a pattern of the first mask plate to an exposure area covering the first original pattern unit; longitudinally moving the substrate by M times of the longitudinal size of the original pattern or transversely moving the substrate by N times of the transverse size of the original pattern to execute alignment exposure, and completing exposure of corresponding areas of other M * N chip groups; and other masks are selected to repeatedly perform exposure on other corresponding pattern units of the first M * N chip set, and longitudinal movement or transverse movement is repeatedly performed to complete exposure of corresponding areas of the corresponding pattern units in other M * N chip sets. According to the scheme, high-density interconnection of multiple chips is realized.

The invention relates to the field of industrial automation, and particularly provides a semiconductor photoetching system based on an intelligent industrial robot. And a multi-sensor fusion and real-time compensation algorithm is adopted, so that photoetching positioning errors are accurately sensed and corrected, the positioning precision is greatly improved, and the stable performance of the chip is ensured. According to a multi-physical field monitoring and self-adaptive control algorithm, process parameters are dynamically regulated and controlled according to a photoetching environment and a photoresist state, pattern transfer is optimized, pattern defects are avoided, and photoetching pattern quality is improved. According to the multi-modal data fusion and deep learning algorithm, photoresist coating parameters are automatically adjusted according to the surface characteristics of the wafer, uniform coating is realized, and the stability of the photoetching process is enhanced. The reinforcement learning algorithm assists the multiple robots in efficient collaboration, optimizes task allocation, improves the overall photoetching efficiency and the resource utilization rate, and promotes the progress of the semiconductor photoetching technology in all directions.

The invention discloses a workpiece table of a proximity contact type exposure machine. A horizontal driving device has a degree of freedom of movement along an X-axis direction and a Y-axis direction; the rotating table has the freedom degree of rotating around the central axis of the rotating table. The lifting table is arranged above the rotating table and has the degree of freedom of moving in the Z-axis direction; the Z-axis voice coil motor is arranged between the rotating table and the lifting table and used for driving the lifting table to move in the Z-axis direction. The ball bowl leveling assembly is arranged between the wafer carrying table and the lifting table and comprises a ball bowl seat with a bowl-shaped cavity and a ball head matched with the bowl-shaped cavity; a concave cavity is formed in the bottom of the bowl-shaped cavity; the spherical surface of the ball head is in sliding sealing fit with the spherical inner wall surface of the bowl-shaped cavity and seals the concave cavity; the mask frame is arranged above the wafer carrying table. According to the invention, the relative position and posture between the mask plate and the wafer can be adjusted, the accurate control of the leveling process is realized, the high-precision movement of four degrees of freedom of X / Y / Z / RZ is effectively realized, the accurate control of the leveling contact force is realized, and the practicability is high.

The embodiment of the invention relates to the technical field of photoetching, and provides a photoetching mask multi-target robust optimization method and system, computer equipment and a medium, and the method comprises the following steps: determining wafer patterns respectively obtained by an initial mask under N process parameters based on a photoetching simulation model, N being an integer greater than 1; on the basis of the deviation between the wafer pattern and a target pattern obtained by the various technological parameters, N loss functions are constructed, and each loss function corresponds to one technological parameter; and performing multiple rounds of iterative optimization on the initial mask until all the loss functions are converged and balanced, thereby obtaining an optimized mask. The optimized mask plate obtained according to the scheme of the embodiment of the invention has good adaptability and relatively high robustness to different process parameters.

The invention provides an exposure system, a photoetching machine and an exposure control method, and relates to the technical field of photoetching machines. A temperature sensor in an exposure control device in the exposure system detects the temperature of a light intensity sensor to obtain the real-time temperature of the light intensity sensor after a shutter is opened; a temperature controller in the exposure control device obtains the real-time temperature and determines the actual light intensity energy corresponding to the real-time temperature according to the real-time temperature and the corresponding relation between the preset temperature and the light intensity energy value; the temperature controller is used for controlling a semiconductor cooling sheet in the exposure control device to cool the light intensity sensor based on the real-time temperature; and the dose calculation equipment obtains the actual light intensity energy, calculates the exposure dose based on the actual light intensity energy, and performs exposure control based on the exposure dose. Therefore, the influence of temperature drift caused by rapid temperature rise on the measurement accuracy of the light intensity sensor is overcome from a hardware structure, accurate actual light intensity energy is obtained, and the calculation of the exposure dose is more accurate.

The disclosure provides a method and system for mask feature optimization and belongs to the field of computational lithography. The method includes: acquiring a new contour after the edges of the main pattern of a mask are moved inward or outward by a predetermined distance; setting a region inside the new contour as the shadow region when the movement is an inward movement and setting a region outside the new contour as the shadow region when the movement is an outward movement; screening an acquired mask gradient field solved by inverse lithography based on the shadow region to keep only the mask gradient field inside the region; and generating a sub resolution assist / inverse feature of the mask based on the screened mask gradient field.

To provide an onium salt monomer used in a chemically amplified resist composition, in photolithography employing a high-energy ray, which exhibits superior solubility in solvents, high sensitivity, and high contrast, and offers superior lithographic performance such as exposure latitude (EL), LWR, CDU, and depth of focus (DOF), and also demonstrates superior resistance to pattern collapse during fine pattern formation as well as superior etching resistance, a polymer including repeat units derived from the onium salt monomer, a chemically amplified resist composition including the polymer, and a pattern forming method using the chemically amplified resist composition.SOLUTION: Provided is an onium salt monomer represented by the following formula (a).SELECTED DRAWING: None

The invention relates to an automatic visual alignment method and system based on a photoetching machine and a storage medium, and relates to the technical field of optical alignment. The automatic visual alignment method comprises the following steps: sequentially focusing image taking areas according to a preset multi-light-source visual focusing mechanism, recording corresponding global focusing parameters, and collecting corresponding original single-layer images; screening all the original single-layer images according to a preset image definition threshold value to obtain a to-be-detected image, and extracting corresponding key channel features; calculating a comprehensive feature error of the key channel features according to a preset image hierarchy template, and judging an initial focusing state in combination with a preset parameter error interval; correcting the global focusing parameter according to the initial focusing state in combination with a preset cooperative calibration mechanism, generating a corresponding control signal, and cooperatively tuning the corresponding visual equipment; through multi-light-source multi-time visual image capturing, the problem of poor alignment precision caused by light source errors and image capturing errors is reduced, the image matching accuracy is improved, and the visual alignment precision is improved.

To provide a light source device and an optical device which can improve stability of light generated from a light source.SOLUTION: A light source device 100 includes: a target holding part 110 having a holding region for holding a target material TM for generating light L0 by giving excitation light LR thereto; a rotation shaft 120 for supporting the target holding part 110; and an axial rotation driving part 130 connected to the rotation shaft 120, and rotating the target holding part 110 around a central axis C of the rotation shaft 120 through the rotation shaft, wherein the target holding part 110 is rotated at a predetermined target rotation angular velocity, and the target holding part 110 has a mass such that a dangerous angular velocity in rotation becomes 85% or less of the target rotation angular velocity.SELECTED DRAWING: Figure 1