8582results about "Microlithography exposure apparatus" patented technology

The present disclosure relates to the use of a metal chelator to treat an exposed photoresist film. In particular embodiments, the metal chelator is employed to remove an interfacial area that is disposed between exposed and unexposed areas or disposed within an exposed area, thereby enhancing patterning quality.

The invention provides a processing method and system for reconstructing an LDI sub-pixel image through sparse compression and application, and the method comprises the steps: calculating a low-resolution to-be-exposed image corresponding to each phase structure in advance through a computer image compression algorithm; the low-resolution to-be-exposed images obtained through calculation are loaded to the digital micro-reflector according to the time sequence, and the display moment of each pattern is matched with the rotation position of the corresponding phase structure; coupling the pattern of the digital micro-mirror and the phase encoding mask in a frequency domain through a 4-f optical system, and reconstructing a high-resolution exposure pattern at a sub-pixel level by utilizing a diffraction effect; projecting a high-resolution light field of the reconstructed high-resolution exposure pattern to the surface of the photoresist, and forming a target circuit pattern by accumulating exposure dose; and the micro-nano structure with sub-pixel precision is obtained after development. The system comprises an image compression module, a pattern matching module and a pattern forming module. According to the invention, the manufacturing cost of the laser direct imaging equipment is reduced under the condition of the same precision.

Various embodiments herein relate to methods, apparatus, and systems for baking metal-containing on a semiconductor substrate in the presence of a reactive gas species. For example, the method may include receiving the substrate in a process chamber, the substrate having a photoresist layer thereon, where the photoresist layer includes a metal-containing photoresist material; flowing a reactive gas species from a gas source, through a gas delivery line, into the process chamber, and exposing the substrate to the reactive gas species in the process chamber; and baking the photoresist layer while the substrate is exposed to the reactive gas species.

The invention discloses an implementation method of a multi-chip high-density connection photoetching technology, an implementation method of a photoetching technology for multi-chip interconnection, a chip-level chip interconnection method, a manufacturing method of a mask plate line and photoetching equipment. The implementation method of the multi-chip high-density connection photoetching technology comprises the following steps: selecting a first mask plate to align and expose with a first original pattern unit in a first M * N chipset through a second alignment mark, and transferring a pattern of the first mask plate to an exposure area covering the first original pattern unit; longitudinally moving the substrate by M times of the longitudinal size of the original pattern or transversely moving the substrate by N times of the transverse size of the original pattern to execute alignment exposure, and completing exposure of corresponding areas of other M * N chip groups; and other masks are selected to repeatedly perform exposure on other corresponding pattern units of the first M * N chip set, and longitudinal movement or transverse movement is repeatedly performed to complete exposure of corresponding areas of the corresponding pattern units in other M * N chip sets. According to the scheme, high-density interconnection of multiple chips is realized.

The invention relates to an automatic visual alignment method and system based on a photoetching machine and a storage medium, and relates to the technical field of optical alignment. The automatic visual alignment method comprises the following steps: sequentially focusing image taking areas according to a preset multi-light-source visual focusing mechanism, recording corresponding global focusing parameters, and collecting corresponding original single-layer images; screening all the original single-layer images according to a preset image definition threshold value to obtain a to-be-detected image, and extracting corresponding key channel features; calculating a comprehensive feature error of the key channel features according to a preset image hierarchy template, and judging an initial focusing state in combination with a preset parameter error interval; correcting the global focusing parameter according to the initial focusing state in combination with a preset cooperative calibration mechanism, generating a corresponding control signal, and cooperatively tuning the corresponding visual equipment; through multi-light-source multi-time visual image capturing, the problem of poor alignment precision caused by light source errors and image capturing errors is reduced, the image matching accuracy is improved, and the visual alignment precision is improved.

The invention provides a manufacturing and processing photoetching method and system of a display panel, and relates to the technical field of photoetching processing. According to the method, the display panel substrate is subjected to cleaning, prime coating and partition division to form an imageable micro-mark covering all exposure partitions, and the thickness and the uniformity are measured after lower-layer supporting glue and upper-layer imaging glue are sequentially formed; carrying out in-situ acquisition and modeling by taking the micro-mark as an imaging object, and generating an exposure correction instruction and an overlapping energy table; performing partition exposure and real-time correction by using a digital micromirror, and completing development to obtain an anti-etching window with a steep side wall; and setting an etching window according to the exposure record and the window quality data, and executing low-damage etching and defect recovery to form stability evaluation data. According to the method, comprehensive improvement of high-precision exposure, pattern consistency and electrical stability is realized.

The invention discloses a method for clearly imaging a mask under an optical objective, and relates to the technical field of optical detection and image processing, and the method comprises the following steps: S1, constructing a light intensity distribution model based on the boundary condition of the field of view of the optical objective in combination with the reflection characteristic and incident angle change rule of a metal edge material, and determining the coverage range of metal edge reflection crosstalk, generating a mask boundary interference prediction map; s2, according to the mask boundary interference prediction map, performing region division on the micro-reflectivity image, extracting brightness gradient characteristics of reflectivity lifting in an interference region, and generating a brightness gradient parameter set required by image filtering; the method is based on light intensity modeling, fusion direction filtering, pixel stripping, gradient reconstruction and credibility weighted fusion, realizes closed-loop control from interference prediction to pixel restoration, has high resolution and adaptivity, can accurately strip edge reflection artifacts and restore a real image structure, remarkably reduces misjudgment and rework rate, and is suitable for large-scale popularization and application. And the mask yield and the stability of the detection system are improved.

The invention relates to an experimental method for manufacturing a through hole by using gray exposure, and aims to realize a through hole structure with a specific inclination angle and depth-to-width ratio through collaborative design of photoetching and etching processes. The method comprises the following steps: determining a through hole angle and a depth-to-width ratio, selecting an etching condition, designing a gray mask structure based on an etching rate selection ratio, implementing gray exposure to obtain a mask pattern, etching, removing residual photoresist and finally forming a target through hole. And by regulating and controlling the selection ratio k of the mask to the substrate material, the inclination angle beta of the through hole and the depth H, designing the gray-scale mask morphology conforming to the target structure. The gray mask can be constructed by adopting gray photoresist or an optical modulation mask, and the inclination morphology parameter, the etching time and the etching rate of the gray mask meet a specific relation, so that high-precision structure control is realized. The method is suitable for the fields of MEMS, micro-optical devices and the like with high requirements on the morphology precision of the through hole, and has the effects of good structure consistency and high process repeatability.

The invention provides an optical proximity correction method and system based on mask error model optimization, and a terminal, and the method comprises the steps: building a data sample set containing a plurality of process conditions through obtaining a large amount of mask manufacturing data under a specific photoetching process; and based on the sample set, constructing a physical optical sub-model and a machine learning sub-model to form a mask error model for outputting a final mask key size value. And then, according to a plurality of preset alternative weight coefficient combinations, reconstructing an objective function which introduces a mask error term, calculating corresponding objective function values, and correcting the photoetching pattern by using an OPC algorithm corresponding to each objective function value to obtain performance index data so as to determine an optimal weight coefficient combination. And finally, optimizing the OPC algorithm by using the target function of the optimal combination, thereby realizing the accurate correction of the photoetching pattern, and improving the precision and yield of semiconductor manufacturing. According to the method, the mask error model comprehensively considering physical optics and machine learning is established, and the OPC process is introduced, so that the influence of the mask error can be predicted and compensated more accurately, the critical dimension deviation and the like are reduced, and the device performance and the yield are improved. The method can adapt to different process conditions, and parameters and weight coefficients can be dynamically adjusted. And moreover, rework can be reduced, automatic adjustment is realized through closed-loop feedback control, the production stability and efficiency are improved, and the cost is reduced.

The invention discloses a photoetching technology implementation method for multi-chip high-density connection, a chip-level chip interconnection method, a mask plate line manufacturing method and photoetching equipment, and the photoetching technology implementation method comprises the following steps: selecting a first mask plate, and aligning and exposing the first mask plate and a first original pattern unit through a second alignment mark, transferring the first mask pattern to a first exposure area; longitudinally moving the substrate by M times of the longitudinal size of the original pattern for alignment exposure, and transversely moving by 1 time of the transverse size of the original pattern for alignment exposure to complete exposure of other M * 1 chipset exposure areas; a second mask is selected to be aligned with the first original pattern unit for exposure through a second alignment mark, and a second mask pattern is transferred to a second exposure area; and transversely moving the substrate by N times of the transverse size of the original pattern for alignment exposure, and longitudinally moving by 1 time of the longitudinal size of the original pattern for alignment exposure, thereby completing exposure of other 1 * N chipset exposure areas. According to the scheme, high-density interconnection of multiple chips is realized.

A control device (100) for controlling a number N, with N ≥ 1, of actuators (200) for actuating N optical elements of an optical system, comprising a control node (K2) coupling to the actuator (200) for providing a control voltage (V2) for the actuator (200), an amplifier (110) configured to receive a supply voltage (V1) provided at an input node (K1) and to provide an output voltage (V3) at an output node (K3), wherein the amplifier (110) comprises a plurality M, with M ≥ 2, of current sources (111, 112) comprising at least one charge-controlled current source (112) and a holding capacitor (113) for maintaining the level of the provided output voltage (V3), and a buffer coupled between the output node (K3) and the control node (K2). (120), which is designed to,to decouple the control node (K2) from the output node (K3) and to provide the control voltage (V2) for the actuator (200) based on the level of the output voltage (V3) of the holding capacitor (113).

Provided are a photosensitive transfer material capable of producing a resin pattern with reduced defects, a method for producing a resin pattern using the photosensitive transfer material, a method for producing circuit wiring, and a method for producing a touch panel, and a polyethylene terephthalate film. The present invention provides a temporary support and a photosensitive resin layer disposed on the temporary support, and the number of foreign particles having a major axis of 3 μm or more contained in the temporary support is 0.5 / mm 2 The following are photosensitive transfer materials and their applications.

The invention provides an optical proximity effect correction method and system, a terminal and a medium, and the method comprises the steps: obtaining a plurality of initial parameter combinations of a photoetching mask design pattern, so as to form an initial population; wherein each initial individual in the initial population corresponds to a group of initial parameter combinations; determining a plurality of optimization indexes of the photoetching mask design graph, and determining an optical proximity effect correction function based on the plurality of optimization indexes and constraint conditions; and based on the optical proximity effect correction function, obtaining an optimal parameter combination of the photoetching mask design pattern in the iteration process of the initial population. According to the invention, the optimization algorithm is innovatively introduced into the field of optical proximity effect correction, comprehensive optical proximity effect correction is realized by introducing a plurality of optimization indexes, the manufacturing requirement of a high-precision silicon optical chip is effectively met, and the performance of the silicon optical chip is effectively improved.

The invention discloses an off-line adjusting device and method for light spot position offset adjustment, and belongs to the technical field of optical precision adjustment. The device comprises a single-beam light-emitting direction adjusting device, a single-beam light-emitting position adjusting device and a multi-beam angle adjusting device which can be formed on the same off-line platform by configuring different detection units. The method comprises the following steps of: calibrating a light source by using the devices in sequence, and constructing an ideal light source assembly with accurate direction, accurate position and multi-beam parallelism; the whole device is installed to a complete machine system to serve as an absolute reference, and a complete machine optical element is adjusted to make a light spot reach a preset position; and finally, replacing with a customized light source and carrying out fine adjustment by taking the calibrated optical element as a reference. According to the method, decoupling of light source calibration and optical element calibration is achieved through the process of establishing the benchmark offline, transmitting the benchmark through the whole machine and customizing light source adaptation, the installation and adjustment precision, efficiency and repeatability are remarkably improved, and dependence on operation experience is reduced.

The present invention is a photosensitive resin composition including: (A) a (meth)acryloyl group-containing resin; (B) a photo-radical generator; and (C) a quantum dot, wherein the quantum dot has a surface coating layer containing siloxane. This can provide: a photosensitive resin composition capable of easily forming a film having high lithography resolution and favorable luminous properties; a photosensitive resin film obtained by using the photosensitive resin composition; patterning processes using these; and a light emitting device obtained by using the photosensitive resin composition.

The invention discloses a fiber bragg grating femtosecond laser direct writing system and method based on light field regulation and control. The system comprises a femtosecond laser source, a polarization control module, a light beam expanding module, a light field modulation module, a 4f filtering imaging module, an oil immersed objective lens, a precision positioning and optical fiber clamping module, an observation module and a computer control module. The method comprises the following steps: firstly, fixing a standard single-mode optical fiber to be processed on a three-dimensional precision displacement platform; then programmable wavefront modulation is carried out on the femtosecond laser through a light field modulation module, and a multi-focus array is generated; then focusing the multi-focus array into the fiber core through an oil-immersed objective lens to realize one-time parallel inscribing of a plurality of refractive index modulation RIM regions; and finally, the computer control module controls the three-dimensional precision displacement platform to move at a constant speed in the axial direction of the optical fiber, and parallel integrated inscribing of a plurality of FBG structures is completed. According to the invention, the inscribing precision and inscribing efficiency of fiber bragg grating femtosecond laser direct writing are improved.

The invention relates to the technical field of digital photoetching equipment, in particular to an LDI machine image segmentation and exposure splicing method, which comprises the following steps: carrying out primary segmentation on an original complex graph, and carrying out segmentation again after refinement processing; in the exposure process, periodically collecting a gray histogram of an exposure pattern, aligning the exposure images of adjacent areas to form a continuous exposure image, and dynamically adjusting exposure parameters by a light beam modulator according to the characteristics of each second segmentation area to realize closed-loop control on the exposure quality; all exposed images are spliced through a search algorithm and a multi-frame fusion technology, smooth transition of image edges is realized, discontinuity of local features is effectively avoided, the overall consistency and integrity of the spliced images are ensured, the imaging quality and precision are further improved, finally, the spliced images are verified, and the image quality is improved. And seamless splicing of each segmented region is ensured, so that high-quality graphic output is generated.

This disclosure relates generally to a patterning structure including an underlayer and an imaging layer, as well as methods and apparatuses thereof. In particular embodiments, the underlayer provides an increase in radiation absorptivity and / or patterning performance of the imaging layer.

The invention discloses a construction method, device and equipment of a dual etching model, a medium and a product, and relates to the technical field of semiconductor manufacturing. The method comprises the following steps: acquiring a light intensity distribution image set; pairing any two light intensity distribution images in the light intensity distribution image set to obtain a plurality of image pairs; for each image pair, respectively inputting the first light intensity distribution image and the second light intensity distribution image in the image pair into a photoetching process model to obtain a first photoresist image and a first etching image as well as a second photoresist image and a second etching image; for each image pair, fusing the first etching image and the second etching image to obtain a target etching label image; and for each image pair, taking the first photoresist image and the second photoresist image as independent variables, taking the target etching label image as a dependent variable, and training the target machine learning model to obtain a dual etching model. According to the invention, the accuracy of the dual etching model can be improved.

The present invention relates to photohardenable compositions and methods of forming an object, the method preferably including a photohardenable composition described herein. Preferred photohardenable compositions and methods include a photohardenable resin component, a first photoinitiator that is activatable by exposure to light at a first wavelength and light at a second wavelength, and a second photoinitiator that is activatable by exposure to light at a third wavelength, wherein the first, second, and third wavelengths are not the same, and the third wavelength is shorter than the first wavelength and the second wavelength. Preferred first photoinitators include photoswitchable photoinitiators. Preferably the second light-activated photoinitiator comprises a free-radical photoinitiator. Hardenable resin compositions and methods of forming an object including the hardenable resin composition are also disclosed.

In the case of forming a fine resist pattern, it is desired to further reduce the roughness of the resist pattern.SOLUTION: A substrate processing apparatus comprising: a heat treatment unit configured to bake a resist film; an exposure unit configured to irradiate the resist film having a portion irradiated with a first radioactive ray with a second radioactive ray; a development unit configured to form a resist pattern by development for removing a part of the resist film; and a control unit configured to control the exposure unit such that the second radioactive ray is collectively irradiated to an entire region of the resist film including the portion irradiated with the first radioactive ray and a portion other than the portion irradiated with the first radioactive ray. The first radiation is ionizing radiation or non-ionizing radiation, and the second radiation is non-ionizing radiation. When the first radiation is non-ionizing radiation, the second radiation is non-ionizing radiation having a wavelength longer than the wavelength of the first radiation. The resist film includes a metal oxide photoresist material.SELECTED DRAWING: Figure 1

The invention provides a pattern correction method and correction system for a mask, and the method comprises the following steps: setting a plurality of main patterns and a plurality of auxiliary patterns, and collecting wafer data after photoetching of the main patterns and the auxiliary patterns; searching a main pattern with the same characteristic size as the auxiliary pattern on the mask plate as a reference pattern; acquiring a scaling ratio of the reference pattern transferred to the wafer from the mask plate, and acquiring virtual size data of the auxiliary pattern transferred to the wafer according to the scaling ratio and size information of the auxiliary pattern on the mask plate; and taking the virtual size data and the wafer data as modeling parameters of an optical proximity correction model, and iteratively establishing the optical proximity correction model until the correction error is smaller than a threshold value. The invention provides a pattern correction method and correction system for a mask plate, which can improve the pattern transfer accuracy of photoetching, thereby improving the semiconductor manufacturing yield.

A radiation-sensitive composition containing: a polymer that undergoes a change in solubility in a developing solution when subjected to the action of an acid; and a compound represented by formula (1).

The invention relates to the technical field of semiconductor manufacturing, in particular to a photomask correction method, device and equipment and a medium, and the photomask correction method comprises the steps: obtaining a test layout with known parameters; training the initial optical proximity correction model based on known parameters until the cost evaluation function and the root-mean-square value are minimum, and obtaining an optical correction model; obtaining photochemical reaction parameters of the test layout, training an optical correction model based on the photochemical reaction parameters until the cost evaluation function and the root mean square value are minimum, and obtaining a target layout correction model; and inputting the initial layout into a target layout correction model to obtain a corrected layout, so as to obtain a target photomask based on the corrected layout, and at least ensuring that the exposed photomask pattern is consistent with a target pattern actually expected by a user.

The invention relates to the field of integrated circuit manufacturing, in particular to a light source mask collaborative optimization method and device, and the method comprises the steps: obtaining an initial light source and an initial mask pattern; the initial mask pattern is a binary image; determining the adjusted initial light source and the adjusted initial mask pattern corresponding to the minimum function value of the light source mask collaborative optimization loss function as an optimized light source and an optimized mask pattern; the light source mask collaborative optimization loss function comprises a main pattern edge error item and a sub-resolution auxiliary pattern printing item; obtaining a simulation photoetching image, and judging whether a sub-resolution auxiliary pattern is printed in the simulation photoetching image or not; when the printed sub-resolution auxiliary pattern exists, outputting the latest optimized mask pattern as a process iteration mask pattern; calculating a proportion value; and when the proportion value does not exceed the qualified upper limit value, outputting an optimized light source and process iteration mask pattern. The method can ensure that no sub-resolution auxiliary pattern is printed and a larger process window is reserved.

The invention discloses a high-precision temperature control method and system for a photoetching machine, and belongs to the technical field of photoetching machine temperature control. The method comprises the following steps: acquiring a temperature array on the lower surface of a mask, heat flux density distribution of a bearing surface of an exposure table and a hot pressure difference signal of an air floating layer, carrying out feature coding, and constructing a high-dimensional thermal coupling situation feature matrix; a dynamic thermal weight correlation map is generated based on the matrix, exposure key nodes serve as anchor points, and explicit modeling is conducted on nonlinear thermal paths among the nodes through a graph neural network; further calculating the spatial gradient change rate of the heat flux per unit area of the mask region according to the thermal weight map, and mapping the spatial gradient change rate to an exposure table temperature control array to generate a nonlinear control function curved surface; and dynamically adjusting power output and response delay parameters of the local heating unit according to the control function, so that dynamic thermal field equalization with nanoscale precision can be realized, thermal drift is effectively inhibited, and the photoetching imaging quality and the yield of an advanced process are improved.

The invention discloses an overlay error real-time correction system based on image recognition and dynamic fitting, and belongs to the field of semiconductor advanced packaging and manufacturing. The system comprises an image acquisition module, an error decoupling module and a dynamic compensation module to form closed-loop control. The image acquisition module adopts a high-resolution linear array CCD (Charge Coupled Device) and an AI (Artificial Intelligence) algorithm to realize high-speed and high-precision mark identification and error quantization; the error decoupling module performs decoupling and trend prediction on system errors and random errors by using PCA, a region weight matrix, LSTM and the like; and the dynamic compensation module realizes mu s-level partition graph compensation by a DMD optical system based on an error thermodynamic diagram through heterogeneous platform operation. The system supports the real-time processing of more than 100Hz, the average overlay error is less than or equal to 0.3 mu m and the response time is less than 5 seconds in the FOPLP and other processes, the problems of lag, low precision and the like of the traditional method are effectively solved, and the manufacturing yield and the production line efficiency are remarkably improved.

The invention relates to the technical field of photoresist, in particular to a color photoresist spraying and developing process for a high-resolution display panel, which comprises the following steps: S1, preparing composite color photoresist; s2, substrate pretreatment; s3, a spraying process; s4, pre-baking is carried out; s5, exposure is carried out; s6, developing; s7, carrying out post-baking; by optimizing the components and process parameters of the color photoresist, the core problems of difficult high-resolution forming, poor film adhesion and insufficient solvent resistance in the traditional process are effectively solved: on one hand, the modified resin and the fluorine-containing monomer are combined and matched with the plasma substrate for pretreatment, so that the adhesion grade of the photoresist film and the substrate reaches 0 grade; the solvent wiping resistance is more than 300 times, so that the long-term use reliability requirement of a terminal product is met; and on the other hand, spraying, pre-baking, exposure and developing parameters are synergistically regulated and controlled, and a stable color paste dispersion system is combined, so that high-resolution pattern forming greater than or equal to 590PPI is realized.

The invention provides an overlay error compensation method, an overlay error compensation device and a photoetching machine, which can be applied to the field of semiconductor manufacturing. The method comprises the steps that high-order polynomial fitting is conducted on current actual overlay error data, multiple current candidate overlay parameters are obtained, the current candidate overlay parameters represent coefficients of a high-order polynomial, and the order of the high-order polynomial is larger than or equal to 4; determining a plurality of current target overlay parameters from the plurality of current candidate overlay parameters based on the significant influence values corresponding to the plurality of current candidate overlay parameters, the significant influence values representing the influence degree of the current candidate overlay parameters on overlay error compensation; and based on a preset mapping model, according to the plurality of current target overlay parameters, obtaining a plurality of current control parameters for overlay error compensation, so that an execution device of the photoetching machine executes an overlay compensation operation according to the plurality of current control parameters, and the preset mapping model represents a mapping relationship between the plurality of target overlay parameter items and the plurality of control parameter items.

The invention relates to the technical field of semiconductor equipment, and discloses a fixing device and semiconductor equipment. The fixing device provided by the embodiment of the invention comprises a clamping assembly, and the clamping assembly is used for clamping a mask plate or a wafer; the supporting assembly is used for supporting the mask plate or the wafer in the first direction and adjusting the included angle between the mask plate or the wafer and a first plane, and the first plane is perpendicular to the first direction; the rotating adjusting mechanism comprises a driving assembly, the driving assembly is used for driving the mask plate or the wafer to rotate, and the rotating shaft of the mask plate or the wafer is parallel to the first direction. According to the fixing device, the Rx angle and the Ry angle of the mask plate or the wafer can be adjusted through the supporting assembly, the Rz angle of the mask plate or the wafer can be adjusted through the rotation adjusting mechanism, and therefore multi-angle adjustment of the space attitude of the mask plate or the wafer can be achieved, and the fixing angle of the mask plate can be accurately controlled.