11188results about "Microlithography exposure apparatus" patented technology

To provide a compound, an acid generator, a resist composition, and a resist pattern forming method which reduce an environmental load, achieve higher sensitivity, and can form a resist pattern excellent in lithographic characteristics.SOLUTION: The resist composition, which generates an acid upon exposure and whose solubility in a developer changes by the action of an acid, contains: a base component (A) whose solubility in a developer changes by the action of an acid; an acid generator component (B) which generates an acid upon exposure; and an acid diffusion controller component (D). The acid generator component (B) contains a compound represented by general formula (b1-1) described in the specification.SELECTED DRAWING: None

The present disclosure relates to the use of a metal chelator to treat an exposed photoresist film. In particular embodiments, the metal chelator is employed to remove an interfacial area that is disposed between exposed and unexposed areas or disposed within an exposed area, thereby enhancing patterning quality.

The invention provides a processing method and system for reconstructing an LDI sub-pixel image through sparse compression and application, and the method comprises the steps: calculating a low-resolution to-be-exposed image corresponding to each phase structure in advance through a computer image compression algorithm; the low-resolution to-be-exposed images obtained through calculation are loaded to the digital micro-reflector according to the time sequence, and the display moment of each pattern is matched with the rotation position of the corresponding phase structure; coupling the pattern of the digital micro-mirror and the phase encoding mask in a frequency domain through a 4-f optical system, and reconstructing a high-resolution exposure pattern at a sub-pixel level by utilizing a diffraction effect; projecting a high-resolution light field of the reconstructed high-resolution exposure pattern to the surface of the photoresist, and forming a target circuit pattern by accumulating exposure dose; and the micro-nano structure with sub-pixel precision is obtained after development. The system comprises an image compression module, a pattern matching module and a pattern forming module. According to the invention, the manufacturing cost of the laser direct imaging equipment is reduced under the condition of the same precision.

The invention relates to the technical field of photoetching machine calibration, and discloses a photoetching machine calibration method, device and equipment based on multi-view vision, and the method comprises the following steps: carrying out imaging and phase sensitive detection analysis on a mask plane and a wafer plane through a four-path optical beam splitting system to obtain four groups of mask-wafer initial alignment position information; performing scanning white light interference edge enhancement processing to obtain three-dimensional surface contour data; performing wavelet transform processing on the three-dimensional surface contour data, and performing dynamic registration on the four-path optical beam splitting system to obtain multi-view visual feature registration data; a comprehensive error model including mechanical errors, optical errors and environmental errors is established, real-time correction and error compensation are carried out on a six-degree-of-freedom motion platform of the photoetching machine, a multi-view vision calibration result of the photoetching machine is obtained, the influence of environmental vibration and thermal drift on calibration precision is effectively eliminated, and the calibration accuracy of the photoetching machine is improved. The optical system is ensured to be always in the optimal imaging state, and the calibration precision is improved.

The invention relates to the technical field of high-end equipment manufacturing, and provides circuit board vertical left and right exchange frame digital exposure LDI equipment and an exposure system. The exposure assembly is arranged on the supporting seat and is used for exposing a workpiece; the first frame part is vertically arranged on the supporting seat, and is used for mounting a workpiece and enabling the workpiece to be vertical; the second frame part is vertically arranged on the supporting seat, and is used for mounting a workpiece and enabling the workpiece to be vertical; the driving assembly is used for driving the first frame part and the second frame part to move in the exposure scanning direction; and / or driving the exposure assembly to move in the exposure scanning direction. The workpiece is placed in the through hole in the vertical frame part, so that the workpiece and the frame part are both vertical, the workpiece does not need to be horizontally placed, the problems that ink on the workpiece is sucked out due to vacuumizing, and the exposure effect is poor are solved, the first frame part and the second frame part can be alternately exposed, and the exposure efficiency is improved.

Various embodiments herein relate to methods, apparatus, and systems for baking metal-containing on a semiconductor substrate in the presence of a reactive gas species. For example, the method may include receiving the substrate in a process chamber, the substrate having a photoresist layer thereon, where the photoresist layer includes a metal-containing photoresist material; flowing a reactive gas species from a gas source, through a gas delivery line, into the process chamber, and exposing the substrate to the reactive gas species in the process chamber; and baking the photoresist layer while the substrate is exposed to the reactive gas species.

As a high-performance resist material, a tin compound is provided which has properties such as solubility, hydrophobicity, and resist sensitivity with good balance. A tin compound includes a tin atom; an organic group R; and at least one of an oxo-ligand and a hydroxo-ligand. One molecule of the tin compound includes two or more types of organic group R and includes a Sn—O—Sn structure, and the organic group R has 1 to 30 carbon atoms.

The invention provides a diffractive optical element design and manufacturing integration method based on gray level laser direct writing photoetching, which comprises the following steps that: a manufacturing simulator and a wave optical simulator are established, and the manufacturing simulator represents the spatial frequency response of an optical system through a low-pass filtering model; a mapping relation between exposure dose and a developing result is established by combining nonlinear response of photoresist, and the wave optical simulator predicts optical performance by utilizing output of the manufacturing simulator and combining a wave optical theory; by setting initial manufacturing parameters and performing iterative optimization, the surface appearance of the photoresist is dynamically adjusted to be close to the target optical performance, the optimization process is combined with an automatic differential technology, a gradient optimization algorithm and a block optimization strategy, and the calculation efficiency is improved; and the optimized parameters are used for processing gray laser direct writing equipment to manufacture the diffractive optical element. The problem of manufacturing deviation caused by the optical proximity effect in the prior art can be solved, and meanwhile the overall performance of the diffraction optical element is remarkably improved.

The invention discloses a UV illumination control method and system for a reel-to-reel exposure machine. The method comprises the following steps: acquiring a real-time moving speed and a tension change value of a coiled material; when the tension change value is greater than the tension threshold value, predicting the deformation trend of the surface of the coiled material based on a nonlinear regression algorithm in combination with the real-time moving speed to obtain a deformation influence value; according to the deformation influence value, a PID control algorithm is adopted to adjust the UV light source, and a light intensity distribution value is obtained; according to the light intensity distribution value, a fuzzy control algorithm is adopted to calculate the output intensity requirement of the UV light source, and speed adjustment is carried out in combination with the real-time moving speed, so that optimized irradiation parameters are obtained; performing area judgment according to the optimized irradiation parameters to obtain an overexposure area and an underexposure area; and adjusting the intensity and distribution of the UV light source in the overexposure area and the underexposure area until the area exposure quality reaches a preset standard range. The method can realize real-time response regulation and control on tension and speed change of the coiled material, and solves the problem of non-uniform exposure dose.

The invention discloses an implementation method of a multi-chip high-density connection photoetching technology, an implementation method of a photoetching technology for multi-chip interconnection, a chip-level chip interconnection method, a manufacturing method of a mask plate line and photoetching equipment. The implementation method of the multi-chip high-density connection photoetching technology comprises the following steps: selecting a first mask plate to align and expose with a first original pattern unit in a first M * N chipset through a second alignment mark, and transferring a pattern of the first mask plate to an exposure area covering the first original pattern unit; longitudinally moving the substrate by M times of the longitudinal size of the original pattern or transversely moving the substrate by N times of the transverse size of the original pattern to execute alignment exposure, and completing exposure of corresponding areas of other M * N chip groups; and other masks are selected to repeatedly perform exposure on other corresponding pattern units of the first M * N chip set, and longitudinal movement or transverse movement is repeatedly performed to complete exposure of corresponding areas of the corresponding pattern units in other M * N chip sets. According to the scheme, high-density interconnection of multiple chips is realized.

The invention relates to the field of industrial automation, and particularly provides a semiconductor photoetching system based on an intelligent industrial robot. And a multi-sensor fusion and real-time compensation algorithm is adopted, so that photoetching positioning errors are accurately sensed and corrected, the positioning precision is greatly improved, and the stable performance of the chip is ensured. According to a multi-physical field monitoring and self-adaptive control algorithm, process parameters are dynamically regulated and controlled according to a photoetching environment and a photoresist state, pattern transfer is optimized, pattern defects are avoided, and photoetching pattern quality is improved. According to the multi-modal data fusion and deep learning algorithm, photoresist coating parameters are automatically adjusted according to the surface characteristics of the wafer, uniform coating is realized, and the stability of the photoetching process is enhanced. The reinforcement learning algorithm assists the multiple robots in efficient collaboration, optimizes task allocation, improves the overall photoetching efficiency and the resource utilization rate, and promotes the progress of the semiconductor photoetching technology in all directions.

The embodiment of the invention relates to the technical field of photoetching, and provides a photoetching mask multi-target robust optimization method and system, computer equipment and a medium, and the method comprises the following steps: determining wafer patterns respectively obtained by an initial mask under N process parameters based on a photoetching simulation model, N being an integer greater than 1; on the basis of the deviation between the wafer pattern and a target pattern obtained by the various technological parameters, N loss functions are constructed, and each loss function corresponds to one technological parameter; and performing multiple rounds of iterative optimization on the initial mask until all the loss functions are converged and balanced, thereby obtaining an optimized mask. The optimized mask plate obtained according to the scheme of the embodiment of the invention has good adaptability and relatively high robustness to different process parameters.

The disclosure provides a method and system for mask feature optimization and belongs to the field of computational lithography. The method includes: acquiring a new contour after the edges of the main pattern of a mask are moved inward or outward by a predetermined distance; setting a region inside the new contour as the shadow region when the movement is an inward movement and setting a region outside the new contour as the shadow region when the movement is an outward movement; screening an acquired mask gradient field solved by inverse lithography based on the shadow region to keep only the mask gradient field inside the region; and generating a sub resolution assist / inverse feature of the mask based on the screened mask gradient field.

To provide an onium salt monomer used in a chemically amplified resist composition, in photolithography employing a high-energy ray, which exhibits superior solubility in solvents, high sensitivity, and high contrast, and offers superior lithographic performance such as exposure latitude (EL), LWR, CDU, and depth of focus (DOF), and also demonstrates superior resistance to pattern collapse during fine pattern formation as well as superior etching resistance, a polymer including repeat units derived from the onium salt monomer, a chemically amplified resist composition including the polymer, and a pattern forming method using the chemically amplified resist composition.SOLUTION: Provided is an onium salt monomer represented by the following formula (a).SELECTED DRAWING: None

The invention relates to an automatic visual alignment method and system based on a photoetching machine and a storage medium, and relates to the technical field of optical alignment. The automatic visual alignment method comprises the following steps: sequentially focusing image taking areas according to a preset multi-light-source visual focusing mechanism, recording corresponding global focusing parameters, and collecting corresponding original single-layer images; screening all the original single-layer images according to a preset image definition threshold value to obtain a to-be-detected image, and extracting corresponding key channel features; calculating a comprehensive feature error of the key channel features according to a preset image hierarchy template, and judging an initial focusing state in combination with a preset parameter error interval; correcting the global focusing parameter according to the initial focusing state in combination with a preset cooperative calibration mechanism, generating a corresponding control signal, and cooperatively tuning the corresponding visual equipment; through multi-light-source multi-time visual image capturing, the problem of poor alignment precision caused by light source errors and image capturing errors is reduced, the image matching accuracy is improved, and the visual alignment precision is improved.

To provide a light source device and an optical device which can improve stability of light generated from a light source.SOLUTION: A light source device 100 includes: a target holding part 110 having a holding region for holding a target material TM for generating light L0 by giving excitation light LR thereto; a rotation shaft 120 for supporting the target holding part 110; and an axial rotation driving part 130 connected to the rotation shaft 120, and rotating the target holding part 110 around a central axis C of the rotation shaft 120 through the rotation shaft, wherein the target holding part 110 is rotated at a predetermined target rotation angular velocity, and the target holding part 110 has a mass such that a dangerous angular velocity in rotation becomes 85% or less of the target rotation angular velocity.SELECTED DRAWING: Figure 1

The invention discloses a reflection-transmission mixed extreme ultraviolet collimation illumination system, and relates to the technical field of extreme ultraviolet optics. The system comprises a discharge plasma EUV light source, a multilayer film ellipsoid reflector and a collimating super lens. Wherein the discharge plasma EUV light source is used for generating radiation light in an extreme ultraviolet band; the multi-layer film ellipsoid reflector adopts an ellipsoid design, is plated with a high-reflectivity multi-layer film, is arranged on a transmission line of the discharge plasma EUV light source, and is used for focusing light beams of the light source; and the collimating super lens is arranged behind the focal position of the multi-layer film ellipsoid reflector and is used for collimating the focused light beams to form parallel light beams for Talbot photoetching illumination. The extreme ultraviolet illumination system is compact in structure, high in light beam energy and high in collimation, and the exposure quality in an application scene needing high-collimation extreme ultraviolet light beams is effectively improved.

The invention provides a manufacturing and processing photoetching method and system of a display panel, and relates to the technical field of photoetching processing. According to the method, the display panel substrate is subjected to cleaning, prime coating and partition division to form an imageable micro-mark covering all exposure partitions, and the thickness and the uniformity are measured after lower-layer supporting glue and upper-layer imaging glue are sequentially formed; carrying out in-situ acquisition and modeling by taking the micro-mark as an imaging object, and generating an exposure correction instruction and an overlapping energy table; performing partition exposure and real-time correction by using a digital micromirror, and completing development to obtain an anti-etching window with a steep side wall; and setting an etching window according to the exposure record and the window quality data, and executing low-damage etching and defect recovery to form stability evaluation data. According to the method, comprehensive improvement of high-precision exposure, pattern consistency and electrical stability is realized.

The invention provides an overlay mark asymmetry compensation method and device for a multi-mode deep learning network, and the method comprises the steps: obtaining manufacturing data of different modes, inputting the manufacturing data into the multi-mode deep learning network for processing, and obtaining an overlay mark asymmetry prediction error; according to the multi-modal deep learning network, feature extraction is performed on manufacturing data of different modals, feature fusion is performed on vector features corresponding to the different modals, and prediction errors with asymmetric overlay marks are obtained through association combination of physical parameters of actual production in the manufacturing process and parameters observed by equipment. Therefore, the actual overlay mark is compensated in actual production. By introducing a multi-modal learning network, various data features are fully mined and utilized, the generalization ability of the model is enhanced, meanwhile, the intelligence of equipment is realized by means of a machine learning technology, and an effective traceability and positioning solution is provided for process problems in wafer production.

The present invention discloses an exposure alignment method and device for a multi-layer PCB, wherein the exposure alignment method for the multi-layer PCB includes: performing multi-spectrum scanning on each layer of the PCB to obtain feedback signals; performing resonance focusing processing on the interface of each layer to obtain characteristic data; performing block division according to the characteristic data and forming quantum dot micro-marks; performing selective phase processing and holographic exposure through spatial light modulation; setting a bionic self-repairing film between layers and performing electric field stimulation; performing asynchronous curing and topographic processing; and finally performing iterative correction verification. The technical solution of the present invention can effectively solve the accuracy and yield problems of thick-layer PCBs containing ferrite, metal heat sinks and high-dielectric composite layers during the exposure alignment process.

The invention discloses a method for clearly imaging a mask under an optical objective, and relates to the technical field of optical detection and image processing, and the method comprises the following steps: S1, constructing a light intensity distribution model based on the boundary condition of the field of view of the optical objective in combination with the reflection characteristic and incident angle change rule of a metal edge material, and determining the coverage range of metal edge reflection crosstalk, generating a mask boundary interference prediction map; s2, according to the mask boundary interference prediction map, performing region division on the micro-reflectivity image, extracting brightness gradient characteristics of reflectivity lifting in an interference region, and generating a brightness gradient parameter set required by image filtering; the method is based on light intensity modeling, fusion direction filtering, pixel stripping, gradient reconstruction and credibility weighted fusion, realizes closed-loop control from interference prediction to pixel restoration, has high resolution and adaptivity, can accurately strip edge reflection artifacts and restore a real image structure, remarkably reduces misjudgment and rework rate, and is suitable for large-scale popularization and application. And the mask yield and the stability of the detection system are improved.

The invention relates to an experimental method for manufacturing a through hole by using gray exposure, and aims to realize a through hole structure with a specific inclination angle and depth-to-width ratio through collaborative design of photoetching and etching processes. The method comprises the following steps: determining a through hole angle and a depth-to-width ratio, selecting an etching condition, designing a gray mask structure based on an etching rate selection ratio, implementing gray exposure to obtain a mask pattern, etching, removing residual photoresist and finally forming a target through hole. And by regulating and controlling the selection ratio k of the mask to the substrate material, the inclination angle beta of the through hole and the depth H, designing the gray-scale mask morphology conforming to the target structure. The gray mask can be constructed by adopting gray photoresist or an optical modulation mask, and the inclination morphology parameter, the etching time and the etching rate of the gray mask meet a specific relation, so that high-precision structure control is realized. The method is suitable for the fields of MEMS, micro-optical devices and the like with high requirements on the morphology precision of the through hole, and has the effects of good structure consistency and high process repeatability.

The invention provides an optical proximity correction method and system based on mask error model optimization, and a terminal, and the method comprises the steps: building a data sample set containing a plurality of process conditions through obtaining a large amount of mask manufacturing data under a specific photoetching process; and based on the sample set, constructing a physical optical sub-model and a machine learning sub-model to form a mask error model for outputting a final mask key size value. And then, according to a plurality of preset alternative weight coefficient combinations, reconstructing an objective function which introduces a mask error term, calculating corresponding objective function values, and correcting the photoetching pattern by using an OPC algorithm corresponding to each objective function value to obtain performance index data so as to determine an optimal weight coefficient combination. And finally, optimizing the OPC algorithm by using the target function of the optimal combination, thereby realizing the accurate correction of the photoetching pattern, and improving the precision and yield of semiconductor manufacturing. According to the method, the mask error model comprehensively considering physical optics and machine learning is established, and the OPC process is introduced, so that the influence of the mask error can be predicted and compensated more accurately, the critical dimension deviation and the like are reduced, and the device performance and the yield are improved. The method can adapt to different process conditions, and parameters and weight coefficients can be dynamically adjusted. And moreover, rework can be reduced, automatic adjustment is realized through closed-loop feedback control, the production stability and efficiency are improved, and the cost is reduced.

The invention relates to the technical field of optical element manufacturing, in particular to an exposure device with an adjustable interference angle without other optical elements, an exposure method and a preparation method of a reflective volume grating. The exposure device comprises a laser source, a reflector, a beam expanding system, a collimating lens, an optical rotating table and PTR glass, wherein the PTR glass is arranged on the optical rotating table; wherein laser emitted by the laser source passes through the reflector, is subjected to light spot beam expansion through the beam expansion system, and is subjected to light beam collimation through the collimating lens, and then the light beam enters the PTR glass body and is interfered in the PTR glass body to form interference fringes; by rotating the optical rotating table, a light beam is incident into the PTR glass body at different angles, and interference fringes of different periods are formed by changing the interference angle. The interference angle is changed by adjusting the light incident angle, the reflective volume grating with different wavelengths is prepared, interference can be automatically formed without depending on redundant optical components, and meanwhile the reflective volume grating has the advantages of being low in cost, simple in structure, easy to operate, beneficial to large-scale production and the like.

The invention discloses a photoetching technology implementation method for multi-chip high-density connection, a chip-level chip interconnection method, a mask plate line manufacturing method and photoetching equipment, and the photoetching technology implementation method comprises the following steps: selecting a first mask plate, and aligning and exposing the first mask plate and a first original pattern unit through a second alignment mark, transferring the first mask pattern to a first exposure area; longitudinally moving the substrate by M times of the longitudinal size of the original pattern for alignment exposure, and transversely moving by 1 time of the transverse size of the original pattern for alignment exposure to complete exposure of other M * 1 chipset exposure areas; a second mask is selected to be aligned with the first original pattern unit for exposure through a second alignment mark, and a second mask pattern is transferred to a second exposure area; and transversely moving the substrate by N times of the transverse size of the original pattern for alignment exposure, and longitudinally moving by 1 time of the longitudinal size of the original pattern for alignment exposure, thereby completing exposure of other 1 * N chipset exposure areas. According to the scheme, high-density interconnection of multiple chips is realized.

The invention relates to an input data quality evaluation method for photoetching process window analysis. The method comprises the following steps: S1, obtaining standardized data; s2, adopting an RANSAC regression algorithm to obtain a robust regression residual analysis confidence coefficient; s3, obtaining the confidence of the isolation tree based on the abnormal score of the isolation tree; s4, adopting a local outlier factor method to obtain local outlier factor confidence; s5, integrating the isolation tree confidence coefficient and the local outlier factor confidence coefficient to obtain an unsupervised confidence coefficient; s6, obtaining a Gaussian confidence coefficient; and S7, integrating the robust regression residual analysis confidence coefficient, the unsupervised confidence coefficient and the Gaussian confidence coefficient to obtain a comprehensive confidence coefficient, and obtaining an input data quality evaluation result for photoetching process window analysis. Compared with the prior art, the method has the advantages of improving the input data quality of photoetching process window analysis and the like.

A control device (100) for controlling a number N, with N ≥ 1, of actuators (200) for actuating N optical elements of an optical system, comprising a control node (K2) coupling to the actuator (200) for providing a control voltage (V2) for the actuator (200), an amplifier (110) configured to receive a supply voltage (V1) provided at an input node (K1) and to provide an output voltage (V3) at an output node (K3), wherein the amplifier (110) comprises a plurality M, with M ≥ 2, of current sources (111, 112) comprising at least one charge-controlled current source (112) and a holding capacitor (113) for maintaining the level of the provided output voltage (V3), and a buffer coupled between the output node (K3) and the control node (K2). (120), which is designed to,to decouple the control node (K2) from the output node (K3) and to provide the control voltage (V2) for the actuator (200) based on the level of the output voltage (V3) of the holding capacitor (113).

The invention provides a wireless passive surface acoustic wave temperature, humidity and pressure sensor and a preparation method thereof, and belongs to the field of surveying and mapping devices. The interdigital transducer is arranged in the middle of the three areas; each pair of reflecting gratings is arranged on the two sides of the interdigital transducer; the resonant frequency of the resonant acoustic wave sensors is adjusted by adjusting the interdigital period of each interdigital transducer and the period of the reflecting grating, and the three resonant acoustic wave sensors are made to detect the surface temperature, the surface humidity and the surface pressure respectively; and the coating is coated on the surface of the area for detecting the surface humidity. Different structural designs are selected based on the surface acoustic wave principle, the resonant frequency of the resonant sensor is adjusted by changing the interdigital period of the interdigital transducer and the period of the reflecting grating, and multi-parameter detection of temperature, humidity and pressure is achieved on the same substrate.

The invention provides an objective lens module and a photoetching imaging system, and relates to the technical field of optical imaging, the objective lens module is configured between an object plane and an image plane of the photoetching imaging system, and the objective lens module comprises a first lens group, a second lens group and a microobjective lens group which are sequentially arranged from the object plane to the image plane, the first lens group and the second lens group are both of a double-Gaussian structure or a double-Gaussian derivative structure, and the focal length of the first lens group is larger than that of the second lens group. The objective lens module can reduce the aperture size of the optical lens in the objective lens module, increase the object space working distance and improve the imaging quality on the premise of ensuring a large field of view.

Provided are a photosensitive transfer material capable of producing a resin pattern with reduced defects, a method for producing a resin pattern using the photosensitive transfer material, a method for producing circuit wiring, and a method for producing a touch panel, and a polyethylene terephthalate film. The present invention provides a temporary support and a photosensitive resin layer disposed on the temporary support, and the number of foreign particles having a major axis of 3 μm or more contained in the temporary support is 0.5 / mm 2 The following are photosensitive transfer materials and their applications.