19781results about How to "Avoid sticking" patented technology

The present invention is a film deposition apparatus configured to deposit a film on a substrate that has been loaded into a vacuum container via a transfer opening and placed on a table in the vacuum container, by supplying a process gas to the substrate from a process-gas supply part opposed to the table under a vacuum atmosphere, while heating a table surface of the table, the film deposition apparatus comprising: an elevating mechanism configured to vertically move the table between a process position at which the substrate is subjected to a film deposition process, and a transfer position at which the substrate is transferred to and from an external transfer mechanism that has entered from the transfer opening; a surrounding part configured to surround the table with a gap therebetween, when the table is located at the process position, so that the surrounding part and the table divide an inside of the vacuum container into an upper space, which is located above the table, and a lower space, which is located below the table; a vacuum exhaust conduit in communication with the upper space, through which a process atmosphere in the upper space is discharged to create a vacuum in the upper space; a heating unit configured to heat a gas contact region ranging from the upper space to the vacuum exhaust conduit, to a temperature higher than a temperature allowing adhesion of reactant; and a heat insulation part disposed between the heating unit and a lower part of the vacuum container surrounding the lower space.

A projection optical system according to the present invention whose image side numerical aperture is greater than or equal to 0.75, and which forms an image of a first object upon a second object using light of a predetermined wavelength less than or equal to 300 nm, comprises: a first lens group G<HIL><PDAT>1 < / BOLD><PDAT>of positive refractive power; a second lens group G<HIL><PDAT>2 < / BOLD><PDAT>of negative refractive power; a third lens group G<HIL><PDAT>3 < / BOLD><PDAT>of positive refractive power; and a fourth lens group G<HIL><PDAT>4 < / BOLD><PDAT>of positive refractive power, and: the first lens group G<HIL><PDAT>1, < / BOLD><PDAT>the second lens group G<HIL><PDAT>2, < / BOLD><PDAT>the third lens group G<HIL><PDAT>3 < / BOLD><PDAT>and the fourth lens group G<HIL><PDAT>4 < / BOLD><PDAT>are arranged in order from a side of the first object; and a distance D in mm along an optical axis between an optical surface of the fourth lens group G<HIL><PDAT>4 < / BOLD><PDAT>closest to the second object, and the second object, satisfies a condition of 0.1<D<5.

A plasma processing apparatus includes: a reaction chamber; two electrodes provided inside the reaction chamber for generating a plasma therebetween, wherein at least one of the electrodes has at least one gas inlet pore through which a gas is introduced into the reaction chamber; and a gas inlet pipe coupled to the gas inlet pore for introducing the gas into the reaction chamber. The gas inlet pipe is grounded and insulated from the gas inlet pore, wherein an insulation member is placed inside the gas inlet pipe and the gas inlet pore.

To automatically purge a transfer chamber by means of inert gas. There is provided a substrate processing apparatus including a controller that performs control so that a transfer chamber 102 connected to a processing chamber 202 for processing a substrate is purged by gas, the controller having a switching unit that switches a function of exhausting the gas in the transfer chamber 102 in a set direction, and a function of circulating the gas through the transfer chamber 102 in an inert gas atmosphere.

An epitaxial growth film formation method allowing to adequately prevent the sticking phenomenon spreading over both a wafer and a susceptor when a horizontal disc-like susceptor is used to form an epitaxial growth film is provided. The epitaxial growth film formation method is a method of forming a vapor growth film on the wafer by placing the wafer having a diameter smaller than that of the susceptor approximately horizontally in substantially a center section on the horizontal disc-like susceptor, wherein the vapor growth film is formed on the wafer by bringing a circumferential recess step adjacent to a bottom inside from an edge part of the wafer and a convex step provided on a circumference of an upper surface inside from the edge part of the susceptor into contact.

A blister package housing a contact lens is described. The package generally includes a base member including a cavity having a bottom surface, for containing a contact lens immersed in a liquid medium. The base member can include a grip region including a curved top surface shaped to accommodate a thumb and a curved bottom surface shaped to accommodate an inner curve of a forefinger. Silicone hydrogel contact lenses located in the liquid medium have a reduced tendency to stick to the bottom surface of the cavity without requiring a surfactant and / or a surface modification of the bottom surface.

When a user steps on a footswitch, high-frequency output power is delivered. A control circuit included in a diathermic power supply calculates the impedance ZSn that is offered by a living tissue immediately after delivery of high-frequency output power is started during the n-th delivery period. The control circuit also calculates the impedance ZEn that is offered thereby immediately before delivery of high-frequency output power is discontinued with elapse of predetermined time. The control circuit then discontinues delivery of high-frequency output power for the predetermined time, and calculates a difference ΔZn between the impedances. When the difference meets a predetermined condition that implies coagulation or when the number of times of delivery reaches a predetermined value, the control circuit discontinues delivery of high-frequency output power.