The present invention provides an
oxide film removal apparatus that can uniformly remove the
oxide film from a
wafer in the circumferential direction and suppress the consumption of
etching gas. [Solution] An
oxide film removal apparatus comprising an
etching chamber, a table on which a
wafer having an oxide film on its lower surface is placed, a
gas supply unit that supplies
etching gas toward the ceiling of the etching chamber, and a gas
discharge unit, wherein the etching gas is brought into contact with the oxide film to remove it, the apparatus comprising a
rectifier plate that partitions the space between the ceiling and the table in the vertical direction, the
rectifier plate having a group of openings through which the etching gas passes, the group of openings consisting of a plurality of openings arranged in a two-dimensional periodic arrangement pattern so as to overlap with the
wafer, the
rectifier plate having an opening group forming region where the group of openings is formed, and a
peripheral region provided around the entire circumference outside the opening group forming region to block the downward flow of the etching gas, wherein the oxide film removal apparatus comprises an etching chamber, a table on which a wafer having an oxide film on its lower surface is placed, a
gas supply unit that supplies etching gas toward the ceiling of the etching chamber, and a gas
discharge unit, wherein the oxide film removal apparatus comprises an etching plate that partitions the space between the ceiling and the table in the vertical direction, the group of openings consists of a plurality of openings arranged in a two-dimensional periodic arrangement pattern so as to overlap with the wafer, and the rectifier plate has an opening group forming region where the group of openings is formed, and a
peripheral region provided around the entire circumference outside the opening group forming region to block the downward flow of the etching gas.