6276 results about "Reaction chamber" patented technology

A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant is a carbon-containing precursor and each silicon-containing precursor is a silane-based precursor with at least a silicon atom having two or more hydrogen atoms bonded to the silicon atom.

A method for making a dense organosilicon film with improved mechanical properties includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising alkoxy silane; and applying energy to the gaseous composition comprising alkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising alkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from ˜2.40 to ˜3.20, an elastic modulus of from ˜6 to ˜30 GPa, and an at. % carbon of from ˜10 to˜45 as measured by XPS.

The present invention relates to a reaction chamber comprising a removable reaction unit and a susceptive casing. The present invention further relates to a reactor incorporating said reaction chamber, and to an assembly comprising said reactor. Additionally, the present invention relates to a method adapted to reduce the preventive maintenance times of the reactor hereinbefore described, and to the use of said reactor in the homoepitaxial or heteroepitaxial deposition of silicon carbide or gallium nitride films on a semiconductor substrate.

A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant can be a depositing additive or a non-depositing additive to increase step coverage of the silicon carbide film.

The invention discloses a multi-stage gas inlet type hydrogen catalytic combustion system and method, and the system comprises a hydrogen supply part, an air supply part, a mixed gas pressure detection part, a mixed gas humidity detection part, a mixed gas hydrogen concentration detection part, a hydrogen catalytic combustion reactor, a branch gas supply part and a post-reaction hydrogen concentration detection part, the air supply component and the hydrogen supply component are connected in parallel and then connected to the hydrogen catalytic combustion reactor through a mixing pipeline, the hydrogen catalytic combustion reactor comprises multiple stages of catalytic reaction cavities which are sequentially distributed from the head end to the tail end, and each catalytic reaction cavity is connected with a branch air supply component. The branch gas supply components are further connected to the hydrogen supply component through branch pipelines, the gas inlet amount of each branch gas supply component is adjustable, the mixing pipeline is communicated with the branch gas supply components through branch connecting pipelines, and a mixed gas pressure detection component, a mixed gas humidity detection component and a mixed gas hydrogen concentration detection component are arranged on the mixing pipeline.

The invention provides a verification method of a mass flow controller and a chemical vapor deposition machine. The method comprises the following steps: in a gap between two adjacent process treatments, setting a first mass flow controller to be a preset flow, introducing first gas into a vacuum reaction chamber through a first gas pipeline, and measuring the gas pressure change of the reaction chamber to obtain a first pressure change rate; setting a second mass flow controller as a preset flow, introducing a second gas into the vacuum reaction chamber through a second gas pipeline, and measuring the gas pressure change of the reaction chamber to obtain a second pressure change rate; obtaining a detection relation coefficient based on the first pressure change rate and the second pressure change rate; and when the deviation ratio between the detection relation coefficient and a pre-obtained reference relation coefficient is greater than a preset threshold value, determining that the at least one mass flow controller has abnormal deviation. Through the method, the gas flow deviation of the machine can be detected, and the flow control condition of the mass flow controller is fed back, so that the use efficiency of the machine is improved, and the detection cost is reduced.

The invention relates to the technical field of hydrogen preparation, and provides a hydrogen storage device based on a solid hydrogen storage material and a hydrogen production method thereof.The device comprises a fuel tank internally provided with a reaction cavity used for containing an aluminum hydride material and mixed powder; the heater is arranged on the outer side of the fuel tank; the first end of the water recycling assembly is communicated with the reaction cavity, and the second end of the water recycling assembly is communicated with the fuel cell system so as to recycle water generated by the fuel cell system to the reaction cavity; the first end of the hydrogen discharging assembly is communicated with the reaction cavity, and the second end is communicated with a fuel cell system. According to the hydrogen storage device provided by the invention, through the application of the high-specific-energy solid hydrogen storage material aluminum hydride which can be stored at normal pressure and release hydrogen at a relatively low temperature, the thermal decomposition process of the metal hydride in the fuel tank and the coupling reaction process of the metal hydride and water are optimized, and the hydrogen is produced by utilizing the hydrolysis reaction of the aluminum hydride thermal decomposition reactant simple substance aluminum and the water; meanwhile, thermal decomposition of aluminum hydride is promoted through heat released by hydrolysis reaction, hydrogen release is coupled, and effective utilization of heat is achieved.

The invention is suitable for the field of atomic layer deposition, and discloses an atomic layer deposition process management method and system based on digital twinning, and the method comprises the steps: building a digital twinning model of an atomic layer deposition production system based on a multi-scale physical information neural network model; acquiring real-time reaction chamber process parameters and real-time state variables, and inputting the real-time reaction chamber process parameters and the real-time state variables into the digital twin model to obtain physical field distribution in the reaction chamber and a predicted growth state of a film on the surface of the substrate; based on the physical field distribution in the reaction cavity and the substrate surface film prediction growth state, decision analysis is carried out through a pre-trained reinforcement learning agent, and correction parameters used for optimizing the film growth quality are obtained; and generating a correction instruction based on the correction parameter, and updating the process parameter of the reaction cavity based on the correction instruction, so that the film on the surface of the substrate in the reaction cavity reaches the target film thickness and uniformity, and thus real-time intelligent closed-loop control of perception-prediction-decision-execution can be formed.

An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.

The invention provides a data detection method and system, a detection device, computer equipment and a storage medium, and the method comprises the steps: obtaining a detection signal of each wafer surface in a planetary reaction cavity, and cutting the detection signal based on a trigger signal to obtain a first signal sequence and a second signal sequence; processing the first signal sequence by adopting a classification model to obtain a material type on each wafer; querying a corresponding optical model based on the material type; and performing iterative optimization on the optical model, the first signal sequence and the second signal sequence by adopting a decoupling algorithm to obtain a temperature detection value and a reflectivity detection value. According to the method, the original detection signal is segmented into the independent signal sequences based on the trigger signal, then the material type is determined according to the independent signal sequences, the corresponding optical model is selected according to the material type, and finally the temperature detection value and the reflectivity detection value with high accuracy are obtained through decoupling according to the optical model. Accurate analysis of a single wafer signal is realized, and process repeatability and stability are greatly improved.

The invention discloses a radio frequency power adjusting system, an adjusting method thereof and semiconductor process equipment. The adjusting system comprises an interference monitoring module which obtains a time domain signal of radio frequency power in a reaction cavity and obtains interference data based on frequency domain characteristics of the time domain signal; the adaptive control module takes the interference data as a state input variable, updates an action output variable by learning an optimal strategy, and determines an optimal action output variable based on an objective function of interference suppression and energy consumption, and the action output variable comprises a frequency regulation variable, an amplitude regulation variable and a pulse width regulation variable; and the feedback adjusting module is used for dynamically adjusting a plurality of process parameters in the reaction cavity based on the optimal action output variable so as to enable the process parameters to reach the target process parameter range. According to the invention, the radio frequency power density in the reaction cavity can be adaptively adjusted, and the optimal dynamic balance between interference suppression and energy consumption is realized, so that the radio frequency interference suppression effect, the process stability and the equipment efficiency are improved.

In a first aspect, the present disclosure relates to a vapor deposition method of coating a carbonaceous substrate with a tantalum carbide coating, where the method includes a coating step. The coating step includes placing the carbonaceous substrate in a reaction chamber and heating the reaction chamber to a temperature between about 1100 DEG C and about 1500 DEG C for a duration of about 1 hour to about 24 hours. The coating step further includes supplying a process gas to the reaction chamber, where the process gas comprises a halide-containing species, and where the process gas comprises less than 4 atomic% carbon and less than 10 vol% H2 within at least 15 minutes after the start of the process. Further, the coating step includes supplying a tantalum-containing substance to the reaction chamber, or placing a tantalum-containing solid into the reaction chamber. Alternatively, the method includes placing a solid comprising a tantalum halide into the reaction chamber.

The invention belongs to the technical field of plasma sources, and provides a high-power high-stability remote plasma source fuzzy hysteresis control method and a circuit, when a reaction cavity is successfully ignited, a plasma source system is controlled to work at constant-frequency variable-duty-ratio constant-power output, and the method comprises the following steps: according to a sampled current value, a duty ratio, a predicted current value and a predicted duty ratio, calculating a constant-frequency variable-duty-ratio constant-power output value; respectively obtaining error control variables e and ec; the error control variables e and ec serve as input values of a fuzzy controller, and the actual control quantity hr output by the fuzzy controller is obtained; obtaining compensation variables # imgabs0 # and # imgabs1 # of the current and the duty ratio based on the error control variables e and ec; and taking the actual control quantity hr as the ring width value of a hysteresis comparator, and respectively compensating the current # imgabs4 # and the duty ratio # imgabs5 # at the moment k by outputting compensation variables # imgabs2 # and # imgabs3 # according to a preset rule. According to the method provided by the invention, a power window in a relatively wide range can be ensured, so that the working stability of the remote plasma source is improved, and the uniformity of a semiconductor manufacturing process is improved.

The invention discloses a wafer vapor deposition device and a use method, and the wafer vapor deposition device comprises a wafer box lifting device which is used for lifting a wafer box; the load locking chamber is arranged between the reaction chamber and the wafer box lifting device, and a wafer cache structure is arranged in the load locking chamber; the wafer cache structure is used for storing wafers which are not subjected to film deposition and transferred from the wafer box to the reaction chamber or storing wafers which are subjected to film deposition and transferred from the reaction chamber to the wafer box; the reaction chambers are used for performing thin film deposition on the wafer; and the wafer transfer device is used for transferring wafers among the wafer box, the wafer cache structure and the reaction chamber. The opening and closing frequency of the load locking cavity is obviously reduced, frequent conversion between atmospheric pressure and vacuum pressure is avoided, the production efficiency is improved, and the operation pressure of a vacuum pumping system is effectively relieved.

The utility model provides a gas inlet device which is used for transmitting reaction gas into a reaction chamber and comprises a guide plate and a gas uniformizing chamber, the guide plate is arranged at the top in the gas uniformizing chamber and comprises a center area and an edge area, the edge area is provided with a first through hole for the reaction gas to pass through, and after the reaction gas passes through the guide plate, the first through hole is communicated with the gas uniformizing chamber. And the gas flows into the reaction chamber through the gas uniformizing chamber. According to the gas inlet device, when reaction gas enters the gas inlet device, mutual pollution between pipelines and cyclones generated by gas convection can be reduced, so that the reaction gas is mixed more sufficiently, gas flowing is more stable, the flow of center gas can be reduced, the gas flowing is more uniform, and the uniformity of the gas reaching the surface of a wafer is improved.

The utility model provides a cyclically-operated carbon dioxide trapping device. A shell of the cyclically-operated carbon dioxide trapping device is connected with an air inlet pipeline, an air outlet pipeline and an exhaust pipeline; the shell is internally provided with a reaction box body, the reaction box body is provided with two reaction cabins, and each reaction cabin is internally provided with a fan, a heater and a carbon dioxide adsorption structure; the air inlet pipeline is connected to the air inlets of the two reaction cabins and is close to the draught fan, the draught fan is used for sucking indoor air into the corresponding reaction box bodies and enabling the indoor air to flow through the heater and the carbon dioxide adsorption structure, and the carbon dioxide adsorption structure is used for adsorbing carbon dioxide in the flowing air; the heater is used for heating flowing air and desorbing carbon dioxide adsorbed in the carbon dioxide adsorption structure; and the two reaction cabins alternately perform adsorption and desorption of carbon dioxide. The device is convenient to operate and can continuously and efficiently control the concentration of indoor carbon dioxide.

The invention discloses a flow control method and device, a storage medium and semiconductor processing equipment. The flow control method comprises the steps that a second switch valve is switched on, a first switch valve is switched off, and the first actual flow of preset gas in a gas pipeline is detected when a flow controller is set to be the first current preset target flow; the second switch valve is switched off, the first switch valve is switched on, and the current equivalent flow of the preset gas in the gas pipeline is detected when the flow controller is set to be the first current preset target flow; calculating current temperature change values of the reaction chamber and the virtual chamber; calculating a first flow correction coefficient of a flow controller according to the first current preset target flow and the first actual flow; calculating a second flow correction coefficient of the flow controller according to the current temperature change value; and correcting the first current preset target flow of the flow controller by adopting the first flow correction coefficient and the second flow correction coefficient. The problem that the thickness of the etched film changes can be solved, and the first sheet effect is restrained.

The invention provides an electrochemical active oxygen supply device for a washing machine and a preparation method. The device comprises a shell, a single closed reaction chamber is formed in the shell, a bifunctional anode electrode and a bifunctional cathode electrode are integrated in the reaction chamber, and a compact and uniform reaction area is formed between the anode electrode and the cathode electrode. When water flows through the reaction area, hydrogen peroxide (H2O2) and / or hydroxyl radicals (OH) are / is electrochemically generated on the surface in situ by accurately adjusting the electrode potential of the difunctional anode, so that instant generation and instant utilization of active oxygen are realized. The active oxygen directly enters a washing system of the washing machine along with water flow, bacteria, viruses and fungi can be efficiently inactivated under the normal-temperature or low-temperature washing condition without additionally adding chemical disinfectants, organic stains and peculiar smell molecules are synchronously degraded, and green, efficient and intelligent healthy washing is achieved.

Disclosed are methods and systems for filling a gap. An exemplary method comprises providing a substrate to a reaction chamber. The substrate comprises the gap. The method further comprises forming a convertible layer on the substrate and exposing the substrate to a conversion reactant. Accordingly, at least a part of the convertible layer is converted into a gap filling fluid. The gap filling fluid at least partially fills the gap. The methods and systems are useful, for example, in the field of integrated circuit manufacture.

The present invention provides a vapor deposition device, comprising: a reaction chamber; a gas injection mechanism, located at the top of the reaction chamber; a susceptor, disposed the reaction chamber, a reaction zone being formed above the susceptor; a rotating shaft, connected to the susceptor; a shielding member, positioned in the reaction chamber and surrounding an inner wall of the reaction chamber, the shielding member comprising an isolation wall near the reaction zone, the isolation wall and the gas injection mechanism forming an enclosed spatial region that covers the reaction zone, a radial dimension of the spatial region gradually increasing from top to bottom, and an outer diameter of the lowest end of the shielding member matching an inner diameter of the reaction chamber; purge channels, distributed on the isolation wall, passing through the isolation wall and in communication with the spatial region, so as to allow a purge gas to be introduced into the spatial region. The vapor deposition device provided by the present invention can improve the production efficiency and quality of materials grown by the device, and extend the maintenance cycle of the reaction chamber.

A fluidized gas reactor includes a system for preventing a fluidizing gas comprising a reactant from premature reaction. The fluidized gas reactor includes a reaction chamber including a particle bed; a gas distribution plate having a plurality of openings therethrough, wherein each opening opens into the reaction chamber; and a plurality of vertical fluidizing gas inlet tubes, each of the fluidizing gas inlet tubes being in fluid communication with one of the openings in the gas distribution plate. Each fluidizing gas inlet tube is configured to receive a fluidizing gas and transport the fluidizing gas to the reaction chamber. A fluidizing gas source provides a stream of the fluidizing gas to the fluidizing gas inlet tubes. A coolant system prevents the fluidizing gas from nndergoing reaction before entering the reaction chamber. The coolant system has a fluid inlet; a coolant flow path in fluid communication with the fluid inlet, the coolant flow path being configured to cool each fluidizing gas inlet tube; and a fluid outlet in fluid communication with the coolant flow path. Each fluidizing gas inlet tube may include a particle outlet and a valve system, where the valve system allows the fluidizing gas flow to the fluidizing gas inlet tubes to be stopped; and allows recovery of particles from the particle bed while the fluidizing gas flow is stopped.

The invention discloses a deep learning and automatic control chemical reactor and a resource recovery method, and relates to the technical field of hydrometallurgy, and the deep learning and automatic control chemical reactor comprises a chemical reactor, a motor, a heating device, a monitoring device, a data center and a PLC control system. Based on a PLC control system, a Transform-LSTM time sequence prediction model is integrated, so that real-time monitoring of parameters such as mixed liquid temperature, reaction chamber pressure, mixed liquid viscosity, conductivity and the like in a wet leaching reaction process can be realized; and the heating power of the heating device, the rotating speed of the motor, the raw material adding amount of the feeding port, the mixed material discharging time of the discharging port and the air displacement of the air exhaust port can be automatically and accurately controlled. The problems that stirring efficiency is low, parameter regulation and control are lagged, and manual experience is relied on are solved, through a predictive control strategy, the real-time monitoring and dynamic regulation level is remarkably improved, the wet leaching process is optimized, energy consumption is reduced, the high-grade metal leaching efficiency is improved, and the method is suitable for various wet metallurgy processes.

The utility model discloses a synchronous water quality purification algae removal ship, relates to the technical field of water treatment, and aims to solve the problem that a large-area water body needs to automatically and synchronously treat algal bloom, SS (suspended solids) and nitrogen and phosphorus pollution. A ship body is fixedly provided with an algae removal reaction bin, an SS removal reaction bin and a nitrogen and phosphorus removal bin, and liquid inlet ends of the three are respectively connected with a liquid pump I, a liquid pump II and a liquid pump III for providing liquid conveying power; an algae removal agent storage bin is fixedly arranged at the upper end or the side wall of the algae removal reaction bin; an iron ion one-way pressure permeable membrane is arranged at a liquid outlet of the algae removal reaction bin and is used for intercepting iron ions in the bin; an SS removal agent storage bin is fixedly arranged at the upper end or the side wall of the SS removal reaction bin; a funnel-shaped slope is arranged at the bin bottom of the SS removal reaction bin, and a sludge outlet is formed in the middle of the slope bottom; a filler is arranged in the nitrogen and phosphorus removal bin, and nitrogen and phosphorus removal functional microorganisms are arranged in the nitrogen and phosphorus removal bin; the device can simultaneously treat water bloom, SS (suspended solids) and nitrogen and phosphorus pollution in a water body, and is suitable for automatic treatment of a large-area water area.

The invention belongs to the technical field of molecular biology, immunology and virology, and discloses an RT-LAMP-CRISPR / Cas12b-based micro-fluidic detection kit and method for beet western yellow virus, isothermal amplification LAMP and CRISPR / Cas12b detection are connected in a reaction chamber by utilizing a raffinose dynamic diffusion system, and simultaneous detection of multiple samples is realized through a micro-fluidic chip. The detection method effectively avoids aerosol pollution, has the advantages of excellent specificity, sensitivity and visualization, is simple and convenient to operate, does not need expensive instruments and equipment, can simply, conveniently and quickly detect whether pepper and beet samples are infected by beet western yellowing virus in the field, and improves the detection efficiency.

The invention relates to a carbon dioxide capture integrated system which comprises a carbon dioxide lean flue gas rear-end treatment unit, a carbon dioxide rear-end treatment unit and a plurality of integrated modules connected in parallel, the integrated module comprises at least one reactor, each reactor comprises a conductive shell, a heating part and a reaction cavity used for containing a solid adsorption material, and the heating parts are arranged outside the conductive shells and conduct heating in an electromagnetic heating mode. The inner diameter of the reactor is 300-500 mm, and the height of the reactor is 2.5-3 times of the inner diameter. The reactor has an adsorption mode, a desorption mode and a shutdown mode which can be switched; the number of the integrated modules can be adjusted according to the carbon dioxide capturing requirement. According to the system, the installation number of the small integrated modules can be flexibly adjusted according to the carbon dioxide trapping requirement, the carbon dioxide trapping requirements of different scales are met, electromagnetic heating is adopted, rapid and uniform heating of the solid adsorption material is effectively achieved, the power consumption of the system is greatly reduced, and then the trapping efficiency and economical efficiency of the system are improved.

The invention provides an epitaxial growth process for improving doping uniformity of n-type doped silicon carbide, and relates to the technical field of semiconductors. The method is based on a chemical vapor deposition growth technology; 11 to 20 gt; the silicon carbide epitaxial growth is carried out by taking silicon carbide with a 4-degree silicon surface in the direction as a substrate, taking trichlorosilane (TCS) and ethylene (C2H4) as growth sources and taking ammonia gas (NH3) as a doping source. Ammonia gas is adopted as an n-type dopant, the decomposition efficiency of the n-type dopant is close to 100% at the temperature of 700 DEG C or above, and the energy of N-H bond breakage of ammonia gas molecules is 390 KJ / mo which is far lower than 946 KJ / mo needed by N-N bond breakage of nitrogen molecules. Therefore, compared with a traditional doping source such as nitrogen, the ammonia gas has higher doping efficiency, residues of excessive nitrogen-containing precursors in the reaction chamber can be reduced, the memory effect is reduced, and thus more excellent in-chip uniformity and stable inter-chip repeatability of the epitaxial wafer are obtained. The selection range of the doping source is widened, the accurate control of the doping concentration is realized, and the stability of the doping concentration in the continuous growth process is improved.

The invention discloses a deposition system for chemical vapor deposition silicon carbide ring production, and relates to the field of high-end equipment manufacturing. The deposition system for producing the chemical vapor deposition silicon carbide ring comprises a furnace body, wherein a reaction chamber and a heating module are arranged in the furnace body; the plurality of spray head groups are connected with gas pipelines; the graphite support is installed at the inner bottom of the bottom cover, the graphite support is used for supporting the annular single crystal substrate, and the graphite support is detachable; the stabilizing mechanism comprises a lifting seat, the supporting arm is fixed to the lifting seat, and the clamping assembly is installed on the supporting arm; the device comprises a furnace body, a nozzle group, a conveying mechanism and a lifting mechanism, and is characterized in that gas containing silicon and carbon is sprayed into the furnace body through the nozzle group, so that the gas containing silicon and carbon can be quickly and uniformly dispersed into a reaction chamber in the furnace body, and the deposition rate and uniformity of silicon carbide on an annular single crystal substrate are ensured; the detachable graphite support is formed by combining a plurality of splicing columns, horizontal supporting rods and clamping needles, and the influence of the graphite support on airflow is reduced by adjusting the number of the splicing columns.

The invention discloses a vacuum transmission valve and semiconductor thin film equipment, the semiconductor thin film equipment comprises a reaction chamber, a transmission chamber and a vacuum transmission valve, and the vacuum transmission valve is installed between the reaction chamber and the transmission chamber. The vacuum transmission valve comprises a valve box, a valve plate fixing shaft, a first sealing valve plate, a second sealing valve plate and a driving assembly, and the valve plate fixing shaft, the first sealing valve plate, the second sealing valve plate and the driving assembly are arranged in the valve box. The first sealing valve plate and the second sealing valve plate are detachably and fixedly arranged on the valve plate fixing shaft back to back in the radial direction of the valve plate fixing shaft. The driving assembly is used for driving the valve plate fixing shaft to drive the first sealing valve plate to move towards the first opening so as to seal the first opening, and driving the second sealing valve plate to move towards the second opening so as to seal the second opening. The two-way sealing valve plate integrally mounted on the valve plate fixing shaft is driven by the driving assembly to move to achieve two-way sealing, and the occupied space is reduced.

The invention relates to the technical field of chemical equipment, in particular to an internal circulation esterification kettle which comprises a kettle body, a circulation stirring assembly, a driving assembly and a scraping assembly. A reaction cavity is formed in the kettle body; the circulating stirring assembly comprises a separation cylinder, a rotating shaft, a first paddle and a driving part; a circulation cavity is formed between the outer wall of the separation cylinder and the inner wall of the kettle body; the first paddle is arranged on the rotating shaft; the driving part is used for driving the rotating shaft to rotate; when the rotating shaft rotates, the first paddle can push materials from the first end of the separation barrel to the second end of the separation barrel, and then the materials flow back to the first end through the circulation cavity; the driving assembly comprises a first gear, a gear ring, a mounting frame and a second gear which form a planetary gear train; the scraping assembly comprises a reciprocating lead screw, a guide rod and a scraping plate, and when the rotating shaft rotates, the scraping plate can rotate by taking the central axis of the rotating shaft as the center and slide up and down along the inner wall of the kettle body in a reciprocating manner. The reaction kettle has the effects of improving the material mixing efficiency and uniformity and reducing adhesion between materials and the inner wall of the reaction kettle.

Various embodiments of the present technology may provide in-situ metrology. A system may include a first sensor embedded within a susceptor and flush with a top surface of the susceptor. The system may also include lift pin pads having a second sensor arranged to contact a lift pin. The system may also include a third sensor arranged outside of a reaction chamber and adjacent to a view port. The system may also include a processor to receive output signals from one or more of the sensors and use the output signals to determine a film thickness on a wafer.