2390 results about "Reaction chamber" patented technology

The invention is suitable for the field of atomic layer deposition, and discloses an atomic layer deposition process management method and system based on digital twinning, and the method comprises the steps: building a digital twinning model of an atomic layer deposition production system based on a multi-scale physical information neural network model; acquiring real-time reaction chamber process parameters and real-time state variables, and inputting the real-time reaction chamber process parameters and the real-time state variables into the digital twin model to obtain physical field distribution in the reaction chamber and a predicted growth state of a film on the surface of the substrate; based on the physical field distribution in the reaction cavity and the substrate surface film prediction growth state, decision analysis is carried out through a pre-trained reinforcement learning agent, and correction parameters used for optimizing the film growth quality are obtained; and generating a correction instruction based on the correction parameter, and updating the process parameter of the reaction cavity based on the correction instruction, so that the film on the surface of the substrate in the reaction cavity reaches the target film thickness and uniformity, and thus real-time intelligent closed-loop control of perception-prediction-decision-execution can be formed.

The invention provides an electrochemical active oxygen supply device for a washing machine and a preparation method. The device comprises a shell, a single closed reaction chamber is formed in the shell, a bifunctional anode electrode and a bifunctional cathode electrode are integrated in the reaction chamber, and a compact and uniform reaction area is formed between the anode electrode and the cathode electrode. When water flows through the reaction area, hydrogen peroxide (H2O2) and / or hydroxyl radicals (OH) are / is electrochemically generated on the surface in situ by accurately adjusting the electrode potential of the difunctional anode, so that instant generation and instant utilization of active oxygen are realized. The active oxygen directly enters a washing system of the washing machine along with water flow, bacteria, viruses and fungi can be efficiently inactivated under the normal-temperature or low-temperature washing condition without additionally adding chemical disinfectants, organic stains and peculiar smell molecules are synchronously degraded, and green, efficient and intelligent healthy washing is achieved.

The invention relates to the technical field of wafer processing, in particular to a reaction chamber and plasma processing equipment, which comprises a quartz tube, an induction coil, a Faraday shield cage, a state monitoring device, a rotation driving device and a control unit, and is characterized in that the quartz tube is arranged at the top of a processing chamber; the induction coil is arranged around the outer side of the quartz tube; the Faraday shielding cage is provided with a slit, and the orthographic projection of the slit on the circumferential wall of the quartz tube forms an erosion area; the state monitoring device is used for monitoring the erosion area; the driving end of the rotary driving device is connected with the quartz tube or the Faraday shielding cage; the control unit is in communication connection with the state monitoring device and the rotary driving device; according to the invention, through real-time monitoring and an active regulation and control mechanism, the problem of concentrated erosion of plasma to the quartz tube in a high-hydrogen process is effectively solved.

The invention relates to the technical field of wafer processing equipment, in particular to a reaction cavity for a high-hydrogen process and plasma processing equipment, and the reaction cavity comprises a quartz tube; the first coil surrounds the outer side of the quartz tube and is connected with an external radio frequency power supply; the Faraday shielding cage is annularly arranged outside the quartz tube and between the quartz tube and the first coil, and a plurality of slits which penetrate through the side wall of the Faraday shielding cage and extend in the axial direction are formed in the Faraday shielding cage; the blocking piece is arranged in the quartz tube, and a structure formed by orthographic projection of the blocking piece on the circumferential side wall of the Faraday shielding cage covers a structure formed by orthographic projection of the first coil on the circumferential side wall of the Faraday shielding cage; the blocking piece is arranged in the quartz tube, so that concentrated bombardment of plasma generated in the high-hydrogen process on the inner wall of the quartz tube can be effectively blocked, the problems of erosion of the quartz tube and particle stripping are remarkably relieved, the process yield of plasma processing equipment is increased, and the service life of a machine table is prolonged.

The invention relates to a preparation method and system for an atomic gas chamber for sapphire coating, and the preparation method comprises the steps: S1, placing a cleaned atomic gas chamber on a heating base station of a reaction chamber, and filling the reaction chamber with replacement gas to discharge residual gas in the reaction chamber; s2, filling aluminum source gas into the reaction chamber, and carrying out chemical adsorption on the wall surface of the atomic gas chamber to form a first film layer; s3, filling replacement gas into the reaction chamber to discharge residual aluminum source gas in the reaction chamber; s4, filling oxide gas into the reaction chamber to oxidize the first film layer and convert the first film layer into an aluminum oxide film layer; s5, filling replacement gas into the reaction chamber to discharge residual oxide gas in the reaction chamber; and S6, repeating the steps S2 to S5 to form a preset number of aluminum oxide film layers with a preset thickness on the wall surface of the atomic gas chamber so as to form the atomic gas chamber with the sapphire coating film. The anti-shielding capability of the alkali metal atomic gas chamber can be enhanced, and the electromagnetic wave precision measurement performance of the atomic gas chamber is improved.

The invention relates to a wafer surface temperature control system and a wafer surface temperature control method for MOCVD (Metal Organic Chemical Vapor Deposition) equipment, belongs to the technical field of electronic equipment, and solves the problem that the temperature data in Recipe cannot be modified in the growth process due to the fact that the temperature data in the Recipe is manually modified by the existing equipment before growth. According to the system, an infrared thermometer detects the surface temperature of a wafer in real time in a non-contact mode, and the wafer is arranged in a reaction chamber of MOCVD equipment; the equipment controller calculates a wafer temperature difference value within a preset time interval based on the wafer surface temperature and the wafer target temperature, and then updates the post-offset heater set temperature based on the wafer temperature difference value and the initial heater set temperature; the temperature controller provides a corresponding regulation voltage signal based on the updated offset heater set temperature; and the heater is heated or cooled based on the adjusting voltage signal so as to compensate the surface temperature of the wafer through the heated or cooled heater, so that the surface temperature of the wafer is close to the target temperature of the wafer. The real-time temperature of the surface of the wafer is accurately controlled, and the temperature control efficiency and stability are improved.

The invention provides a wafer lifting device and a reaction chamber. The wafer lifting device comprises a plurality of ejector pins and a lifting mechanism. The first ends of the ejector pins are located on the lower side of the heating disc, and the second ends of the ejector pins extend to the upper side of the heating disc through ejector pin through holes distributed in the heating disc. The surface, facing the ejector pin via hole, of the ejector pin is provided with at least one concave part so as to collect deposited by-products. The lifting mechanism is connected with the first ends of the ejector pins so as to drive the ejector pins to ascend and descend.

The invention belongs to the field of thin films, and particularly discloses an atomic layer deposition method and a thin film prepared through the atomic layer deposition method. According to the deposition method, the reaction cavity, the two input pipeline systems, the outlet valve and the vacuum pump in the atomic layer deposition system are used for controlling precursor pulse deposition and inert gas purging conditions in the atomic deposition process, and the film deposition state is improved; the efficiency of purging and removing substances and impurity residues such as a precursor and a reaction product thereof is improved, the problem that the quality of a deposited film is affected by the impurity residues in a reaction system or on the surface of a sample in the film deposition process is avoided, the uniformity and compactness of film deposition and the coverage rate and conformal rate of a film on the surface of a base material hole are improved, the defects of the film are reduced, and the yield is improved. And the method can be applied to a substrate with a high aspect ratio structure to deposit the film, so that the purpose of manufacturing a large-size complicated special-shaped structure device is achieved.

The invention provides a method and a system for optimizing a process environment in an epitaxial growth reaction cavity, and relates to the technical field of semiconductor detection. The optimal estimation algorithm is compared with a forward model database constructed based on a process scene, the concentration information and the particle source of the particles can be inversed in real time in the epitaxial growth process, process parameters related to particle generation are quantified according to the concentration information and the particle source, and dynamic optimization of the epitaxial growth process environment is achieved. By adopting the scheme, particulate matter risks caused by different mechanisms can be identified in time, and process parameters can be adjusted in a targeted manner, so that particulate matter accumulation and pollution events are effectively inhibited, the epitaxial growth stability and yield are improved, and the film quality and process consistency is ensured.

The invention discloses a digital single-molecule enzyme multi-activity characteristic cross-scale heterogeneity dynamic evaluation method, which comprises the following steps: diluting a pre-combined enzyme-template-primer ternary complex to a single-molecule level so as to load the enzyme-template-primer ternary complex into a reaction chamber in a micropore array chip for rolling circle amplification, a molecular beacon is combined with an amplification product to release a fluorescence signal; monitoring and acquiring the fluorescence signal in real time to generate a time-resolved fluorescence intensity curve; extracting a slope parameter of the fluorescence intensity curve so as to obtain a catalytic synthesis rate through conversion calculation for evaluating enzyme activity; the distribution of catalytic synthesis rate values is fitted using an n-fold Gaussian mixture model to obtain a standard deviation for assessing population homogeneity and a coefficient of variation for assessing stability. According to the invention, cross-scale analysis of single-molecule resolution, multi-parameter dynamic association and environmental interference processing can be realized at the same time, and resolution limitation of a traditional analysis technology is broken through by integrating single-molecule fluorescence tracking and population statistics.

The invention provides a rotating assembly and semiconductor process equipment, and the rotating assembly comprises a sleeve which is provided with a first step structure on the inner wall; the rotating shaft is arranged in the inner cavity of the sleeve and is provided with a second step structure; the pressing block structure is arranged on the second step structure and is connected with the sleeve; the first sealing structure is arranged in a first annular accommodating cavity between the sleeve and the rotating shaft; the first sealing structure comprises a first sealing ring and a second sealing ring; a first groove is formed in the side surface, deviating from the rotating shaft, of the first sealing ring; the second sealing ring surrounds the side face, away from the rotating shaft, of the first sealing ring and is located in the first groove. When the rotary assembly is applied to semiconductor process equipment for bearing wafers, the rotary arrangement of the bearing platform in a reaction chamber and the isolation of a vacuum environment and an external atmospheric environment can be realized, the use of magnetofluid is avoided, the cost is reduced, and the production efficiency is improved. And the risks of sealing failure and reaction chamber pollution caused by magnetic fluid leakage can be eliminated.

The invention discloses a furnace tube reaction cavity structure, and a process method and process equipment of a semiconductor. The furnace tube reaction cavity structure comprises a furnace tube body, wherein a composite coil is axially wound outside the furnace tube body; the composite coil is connected with the alternating-current power supply and the radio-frequency power supply in parallel, heats the furnace tube body through the alternating-current power supply and enables the furnace tube body to be filled with plasmas through the radio-frequency power supply; the high-frequency filter is connected in series in a circuit of the alternating-current power supply and used for preventing high-frequency signals generated by the radio-frequency power supply from entering the circuit of the alternating-current power supply; and the low-frequency filter is connected in series in a circuit of the radio-frequency power supply and is used for preventing low-frequency signals generated by the alternating-current power supply from entering the circuit of the radio-frequency power supply. According to the invention, the chamber structure can be simplified, the equipment cost can be reduced, the stability of high-frequency and low-frequency alternating-current electric signals can be improved, and the risks of non-uniform heating in the tube caused by coil current fluctuation and unstable gas ionization process caused by damage to the stability of a high-frequency magnetic field can be avoided, so that the process effect is improved.

The utility model relates to a cold fuming smoking tank which comprises a smoking insecticide and a tank body, the smoking insecticide is arranged at the bottom of an inner cavity of the tank body, a cigarette lighting hole is formed in the middle of the smoking insecticide, a reaction chamber is arranged on the upper side of the smoking insecticide in the inner cavity of the tank body, a spring is arranged in the reaction chamber, and the upper end of the spring is matched with the top of the tank body. The lower end of the spring is matched with the upper end of the smoking insecticide, and a tank smoke outlet is formed in the top of the tank. During field use, the smoke lighting hole in the middle of the smoke insecticide is heated, smoke formed by the smoke insecticide firstly enters the reaction chamber, and the reaction chamber plays a role in gathering and pressurizing the smoke, so that the smoke has a certain initial speed when being discharged from the smoke outlet of the tank body, and the smoke can quickly climb to the top of the space; the mushroom cloud-shaped volatile smoke is formed, the whole roof can be gradually dispersed with the smoke, and then the smoke naturally sinks, so that insect killing is achieved.

Disclosed is semiconductor manufacturing equipment. The semiconductor manufacturing equipment includes: a remote plasma source used configured to generate plasma; a reaction chamber coupled to the remote plasma source, and defining a space in which a wafer is processed; an exhaust pipeline coupled to the reaction chamber through an exhaust port, and configured to discharge by-products generated in the reaction chamber; a first pipeline coupled to the reaction chamber; a second pipeline coupled to the exhaust pipeline through the exhaust port; and an analyzer configured to analyze a first gas mixture received from the reaction chamber through the first pipeline.

The utility model relates to the technical field of automobile parts, in particular to a three-way catalyst shell with a spiral guide plate, which comprises a three-way catalyst shell body, a reaction chamber is arranged in the three-way catalyst shell body, an air inlet and an air outlet are arranged at two ends of the three-way catalyst shell body, and the air inlet and the air outlet are communicated with the reaction chamber. An air guide structure communicated with the air inlet is arranged in the three-way catalyst shell body and comprises a flow guide column, a spiral flow guide plate and an air distribution plate, the spiral flow guide plate and the air distribution plate are sequentially, coaxially and fixedly connected to the flow guide column in the air inlet direction, and the outer wall of the spiral flow guide plate and the outer wall of the air distribution plate are closely attached to the inner wall of the three-way catalyst shell body. And a plurality of flow guide grooves are formed in the gas distribution plate, so that the problems that the performance of a traditional three-way catalyst is improved by improving the content of precious metal, and the manufacturing cost is sharply increased due to the increase of the content of the precious metal are solved.

The utility model relates to a magnetic Fenton catalyst reaction device. The magnetic Fenton catalyst reaction device comprises a reaction chamber and an electromagnet assembly arranged in the reaction chamber, the electromagnet assembly comprises a stirring unit arranged in the middle and an electromagnetic unit arranged at the bottom of the stirring unit. The utility model provides a magnetic Fenton catalyst reaction device which can be used for accurately separating a powdery magnetic heterogeneous Fenton catalyst from a heterogeneous Fenton system and quickly and directly desorbing and returning the powdery magnetic heterogeneous Fenton catalyst to a heterogeneous Fenton reaction system after the powdery magnetic heterogeneous Fenton catalyst is separated, so that the particle structure of the catalyst is reserved, and the cyclic utilization efficiency is improved.

The invention discloses a negative electrode composite current collector of a non-negative electrode lithium battery and a preparation method of the negative electrode composite current collector. The preparation method comprises the following steps: preparing a metal nanoparticle-metal organic framework composite material MNP-MOF-NH2 by adopting a solvothermal method; the preparation method comprises the following steps: adding MNP-coated MOF-NH2, a conductive agent and a binder into a solvent, mixing and uniformly stirring to obtain a negative electrode coating slurry, coating the surface of a negative electrode current collector foil with the negative electrode coating slurry to form a first coating, placing the first coating in a reaction chamber of atomic layer deposition equipment, introducing a metal source and gas in an alternate feeding deposition mode to generate a layer of compact lithium-loving metal oxide, and carrying out vacuum drying to obtain the lithium-loving metal oxide negative electrode. And drying to obtain a double-gradient composite protective layer, namely the negative electrode composite current collector of the non-negative electrode lithium battery. According to the invention, a double-layer structure of a compact lithium-loving layer, a porous metal organic framework and a metal particle composite layer is constructed, and the upper lithium-loving metal oxide induces uniform nucleation of lithium, so that the deposition barrier is reduced. The network structure of the lower layer MOF provides a space limiting effect to accommodate and separate lithium deposition, in addition, polar groups contained in the MOF promote desolvation and transport of Li +, and metal nanoparticles accelerate ion / electron transport.

Disclosed herein is a method, system and apparatus for forming, by a cyclic process, a dopant concentration gradient in a doped hafnium zirconium oxide (HZO) layer on a substrate, the cyclic process includes, providing the substrate in a reaction chamber, a) pulsing a hafnium precursor(s) into the reaction chamber, where at least a part of the substrate is contacted with the hafnium precursor(s), b) pulsing a zirconium precursor(s) into the reaction chamber, where at least a part of the substrate is contacted with the zirconium precursor(s), c) pulsing an oxygen reactant(s) into the reaction chamber, where at least a part of the substrate is contacted with the oxygen reactant(s), d) pulsing a dopant precursor(s) into the reaction chamber, where at least a part of the substrate is contacted with the dopant precursor(s), and e) purging the reaction chamber.

The invention discloses a gas mixing and uniformizing device for hydrogen fluoride gas phase etching, which comprises a device body, the device body internally comprises a first-stage mixing cavity, a second-stage mixing cavity, a third-stage mixing cavity and a reaction cavity which are sequentially communicated, the first-stage mixing cavity is arranged at the top of the device, and three groups of gas inlet pipelines are respectively arranged outside the device and are communicated with the first-stage mixing cavity; a plurality of groups of spiral blades which are arranged in an annular array are arranged in the second-stage mixing cavity, an annular hole partition plate is arranged at the communication part of the third-stage mixing cavity and the second-stage mixing cavity, a porous partition plate is arranged between the third-stage mixing cavity and the reaction cavity, and flow guide holes which are communicated up and down are formed in the annular hole partition plate and the porous partition plate; a manual sample inlet and a manipulator sample inlet are respectively arranged in front of and behind the reaction cavity, and an exhaust port is arranged at the bottom of the reaction cavity. The method has the advantages that the efficient mixing and uniform distribution of the ethanol steam, the hydrogen fluoride gas and the carrier gas can be realized, and the stability and the etching quality of the etching process are improved.

The invention discloses a method for epitaxial growth of gallium oxide on a patterned composite substrate and a gallium oxide thin film, and belongs to the technical field of semiconductor manufacturing. Comprising the following steps: step 1, providing a patterned composite substrate, placing the patterned composite substrate in a reaction cavity, and baking the patterned composite substrate; 2, preparing a buffer layer on the patterned composite substrate; and step 3, preparing a gallium oxide thin film on the buffer layer. According to the invention, the problem of large difference of gallium oxide heteroepitaxy thermal expansion coefficients is solved, the problem of stress release of high-temperature epitaxial gallium oxide is optimized, the heat dissipation capability is improved, the flatness of an epitaxial gallium oxide film is improved, and the quality of the epitaxial film is also greatly improved.

The invention relates to the technical field of water pollution treatment, and discloses a sulfur autotrophic denitrification filler for nitrogen wastewater treatment and a preparation method thereof.The sulfur autotrophic denitrification filler comprises composite particles capable of being degraded step by step, and the composite particles are synergistically limited by chemical compositions and microscopic physical structures; the main alkali source calcium-based carbonate and the sacrificial alkali source magnesium-based oxide establish an interface self-updating mechanism by utilizing the reaction rate difference; physically, a pore structure composed of a reaction chamber and a throat is built in the filler, self-cleaning of an endogenous mass transfer channel is achieved through denitrification product nitrogen, and through internal cooperation of chemical and physical mechanisms, the problems of interface passivation and pore silting self-locking of traditional sulfur-based filler caused by reaction products are solved; the active self-updating and long-term stable operation capabilities of the filler are realized, so that the application potential of a cheap alkali source is released.

The utility model belongs to the technical field of semiconductor technology, and discloses a plasma cleaning device and semiconductor equipment. The plasma cleaning device comprises a remote plasma source, a first cleaning pipeline and a second cleaning pipeline, wherein the remote plasma source is used for generating plasma. The first cleaning pipeline is connected to the remote plasma source and the reaction chamber, and the second cleaning pipeline is connected to the same remote plasma source and the exhaust pipeline and is connected to the upstream of the exhaust control valve. According to the device, the plasma can be directly input into the reaction chamber and the exhaust pipeline through the first cleaning pipeline and the second cleaning pipeline respectively, so that the plasma is prevented from being inactivated before reaching the exhaust control valve, the exhaust control valve can be thoroughly cleaned, the phenomena of accumulation, blockage and blockage of byproducts are avoided, and the service life of the reaction chamber is prolonged. Therefore, the time cost and the labor cost of disassembly and cleaning are reduced, and the efficiency of semiconductor process equipment is improved.

The invention discloses a gas-liquid atomization rotational flow mixing reaction device which comprises a mounting bracket, the mixing reaction chamber is detachably mounted on the mounting bracket through a bolt; the communicating chamber is detachably mounted at the top of the mixing reaction chamber through a bolt; the gas-liquid separation chamber is detachably mounted at the top of the communicating chamber through a bolt; the atomizing nozzle is fixedly connected to the mixing reaction chamber; the driving unit and the indicating unit are installed on the pressure regulating unit, and one end of the gas feeding pipe is fixedly connected to the atomizing nozzle. By adopting a gas-liquid atomization and rotational flow self-stirring structure, the problems that traditional mechanical stirring is slow in mixing, poor in uniformity and unbalanced in local proportion are fundamentally solved, the phenomena of back mixing and short circuit are eliminated, the reaction is more sufficient, crystallization is more uniform, the yield is higher, meanwhile, a stirring mechanism is omitted, the device is simplified, energy consumption is reduced, parameters such as pH and temperature are fed back more timely, and the production efficiency is improved. And the control precision is greatly improved.

The utility model discloses a reaction furnace and a recovery system, and relates to the technical field of chemical equipment. The reaction furnace comprises a furnace body, a crucible and an isolation protection layer, the crucible and the isolation protection layer are both arranged in the furnace body, the isolation protection layer is arranged in the crucible, a reaction chamber is formed in the isolation protection layer, and the reaction chamber is used for containing reactants; the reaction furnace heats reactants in the reaction chamber through the crucible, and the isolation protection layer is used for separating the reactants in the reaction chamber from the crucible. The scheme at least can be used for improving the process quality of the reaction furnace.

The invention relates to a selective deposition method and deposition equipment of a metal molybdenum film. The method comprises the following steps: a treatment piece is provided with an exposed active surface and an inert surface, and a deposition selection ratio exists between the active surface and the inert surface; the treated part is placed in a reaction chamber for multiple deposition treatment steps, and the deposition treatment steps comprise the steps that carrier gas carries a molybdenum halide precursor containing no oxygen element to enter the reaction chamber, and the carrier gas and the active surface are adsorbed; after the molybdenum halide precursor and the active surface are adsorbed, carrying out first purging treatment on the treated part; after carrying out the first purging treatment, introducing a reductive co-reactant into the reaction chamber, and reducing the molybdenum halide precursor adsorbed on the active surface into a metal molybdenum layer; after the metal molybdenum layer is reduced, carrying out second purging treatment on the reaction chamber and the treatment piece; and after the multiple deposition treatment steps are carried out, the multiple metal molybdenum layers formed in the multiple deposition treatment steps are used as metal molybdenum films. And the conductivity and the forming quality of the metal molybdenum film are improved.

Apparatus for mixing two or more gases prior to entering a reaction chamber, reactor systems including the apparatus, and methods of using the apparatus and systems are disclosed. The systems and methods as described herein can be used to, for example, pulse a mixture of two or more precursors to a reaction chamber.

Valve (1) for closing a passage between a heating chamber (100) and a reaction chamber (120), comprising a housing part (3) forming a valve chamber (5), with a first opening (7) having a first opening edge (7a) oriented towards the heating chamber (100), and a second opening (9) having a second opening edge (9a) oriented towards the reaction chamber (120), wherein the first opening (7) and the second opening (9) together with the valve chamber (5) form a transport channel (11) between the heating chamber (100) and the reaction chamber (120) when open, and comprising a first locking flap (13) for closing the first opening (7), wherein the first locking flap (13) is pivotably arranged in the valve chamber (5) and is pivotable from an open position to a closed position, wherein the first locking flap (13) in the closed position abuts the first opening edge (7a) in a sealing manner.wherein a sealing device (17) is arranged on the first locking flap (13), which can be pressed against the first opening edge (7a) in the closed position, and with a second locking flap (19) for closing the second opening (9), wherein the second locking flap (19) is pivotably arranged in the valve chamber (5) and can be pivoted from an open position to a closed position, wherein the second locking flap (19) rests against the second opening edge (9a) on the side facing the valve chamber (5) in the closed position, wherein in the open position the second locking flap (19) is arranged in front of the first locking flap (13) in the direction of the transport channel (11) and forms a heat radiation shield for the sealing device (17) against heat radiation from the transport channel (11).

The invention provides a 3C-SiC epitaxial layer and a preparation method thereof, and the preparation method comprises the steps: firstly, placing a 4H-SiC substrate in a reaction chamber, and carrying out the homoepitaxial growth on the surface of the 4H-SiC substrate to obtain a 4H-SiC buffer layer; secondly, performing heteroepitaxial growth on the surface of the 4H-SiC buffer layer to obtain a sacrificial layer made of a C or Si material; thirdly, completely converting the sacrificial layer into a 3C-SiC buffer layer by adjusting process parameters of the reaction chamber; and finally, carrying out homoepitaxial growth on the surface of the 3C-SiC buffer layer to obtain a 3C-SiC epitaxial layer. The sacrificial layer made of C or Si is introduced to the surface of the 4H-SiC substrate, the key effect that the sacrificial layer passivates the activity of atomic steps on the surface of 4H-SiC is utilized, the multi-type mixing phenomenon is reduced fundamentally, and therefore the growth quality and the yield of the 3C-SiC epitaxial layer are improved.

An autothermal ammonia reactor includes a chamber, a hydrogen-separation membrane within the chamber, and an ammonia decomposition catalyst. The chamber receives ammonia and air. The chamber including a combustion zone, a catalytic zone, and a hydrogen zone. The catalytic zone is in thermal communication with the combustion zone. The chamber directs the air and a portion of the ammonia from the fluid inlet to the combustion zone to allow the air and ammonia to exothermically react to generate thermal energy. The chamber directs another portion of the ammonia into the catalytic zone to decompose into hydrogen and nitrogen as the ammonia is exposed to the thermal energy from the combustion zone and contacts the catalyst. The chamber directs the hydrogen from the catalytic zone, through a surface of the hydrogen-separation membrane, to the hydrogen zone to allow the hydrogen to exit the chamber through the fluid outlet.