4554 results about "Reaction chamber" patented technology

A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant is a carbon-containing precursor and each silicon-containing precursor is a silane-based precursor with at least a silicon atom having two or more hydrogen atoms bonded to the silicon atom.

A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant can be a depositing additive or a non-depositing additive to increase step coverage of the silicon carbide film.

The invention relates to the technical field of hydrogen preparation, and provides a hydrogen storage device based on a solid hydrogen storage material and a hydrogen production method thereof.The device comprises a fuel tank internally provided with a reaction cavity used for containing an aluminum hydride material and mixed powder; the heater is arranged on the outer side of the fuel tank; the first end of the water recycling assembly is communicated with the reaction cavity, and the second end of the water recycling assembly is communicated with the fuel cell system so as to recycle water generated by the fuel cell system to the reaction cavity; the first end of the hydrogen discharging assembly is communicated with the reaction cavity, and the second end is communicated with a fuel cell system. According to the hydrogen storage device provided by the invention, through the application of the high-specific-energy solid hydrogen storage material aluminum hydride which can be stored at normal pressure and release hydrogen at a relatively low temperature, the thermal decomposition process of the metal hydride in the fuel tank and the coupling reaction process of the metal hydride and water are optimized, and the hydrogen is produced by utilizing the hydrolysis reaction of the aluminum hydride thermal decomposition reactant simple substance aluminum and the water; meanwhile, thermal decomposition of aluminum hydride is promoted through heat released by hydrolysis reaction, hydrogen release is coupled, and effective utilization of heat is achieved.

The invention is suitable for the field of atomic layer deposition, and discloses an atomic layer deposition process management method and system based on digital twinning, and the method comprises the steps: building a digital twinning model of an atomic layer deposition production system based on a multi-scale physical information neural network model; acquiring real-time reaction chamber process parameters and real-time state variables, and inputting the real-time reaction chamber process parameters and the real-time state variables into the digital twin model to obtain physical field distribution in the reaction chamber and a predicted growth state of a film on the surface of the substrate; based on the physical field distribution in the reaction cavity and the substrate surface film prediction growth state, decision analysis is carried out through a pre-trained reinforcement learning agent, and correction parameters used for optimizing the film growth quality are obtained; and generating a correction instruction based on the correction parameter, and updating the process parameter of the reaction cavity based on the correction instruction, so that the film on the surface of the substrate in the reaction cavity reaches the target film thickness and uniformity, and thus real-time intelligent closed-loop control of perception-prediction-decision-execution can be formed.

The invention provides a data detection method and system, a detection device, computer equipment and a storage medium, and the method comprises the steps: obtaining a detection signal of each wafer surface in a planetary reaction cavity, and cutting the detection signal based on a trigger signal to obtain a first signal sequence and a second signal sequence; processing the first signal sequence by adopting a classification model to obtain a material type on each wafer; querying a corresponding optical model based on the material type; and performing iterative optimization on the optical model, the first signal sequence and the second signal sequence by adopting a decoupling algorithm to obtain a temperature detection value and a reflectivity detection value. According to the method, the original detection signal is segmented into the independent signal sequences based on the trigger signal, then the material type is determined according to the independent signal sequences, the corresponding optical model is selected according to the material type, and finally the temperature detection value and the reflectivity detection value with high accuracy are obtained through decoupling according to the optical model. Accurate analysis of a single wafer signal is realized, and process repeatability and stability are greatly improved.

The utility model provides a cyclically-operated carbon dioxide trapping device. A shell of the cyclically-operated carbon dioxide trapping device is connected with an air inlet pipeline, an air outlet pipeline and an exhaust pipeline; the shell is internally provided with a reaction box body, the reaction box body is provided with two reaction cabins, and each reaction cabin is internally provided with a fan, a heater and a carbon dioxide adsorption structure; the air inlet pipeline is connected to the air inlets of the two reaction cabins and is close to the draught fan, the draught fan is used for sucking indoor air into the corresponding reaction box bodies and enabling the indoor air to flow through the heater and the carbon dioxide adsorption structure, and the carbon dioxide adsorption structure is used for adsorbing carbon dioxide in the flowing air; the heater is used for heating flowing air and desorbing carbon dioxide adsorbed in the carbon dioxide adsorption structure; and the two reaction cabins alternately perform adsorption and desorption of carbon dioxide. The device is convenient to operate and can continuously and efficiently control the concentration of indoor carbon dioxide.

The invention provides an electrochemical active oxygen supply device for a washing machine and a preparation method. The device comprises a shell, a single closed reaction chamber is formed in the shell, a bifunctional anode electrode and a bifunctional cathode electrode are integrated in the reaction chamber, and a compact and uniform reaction area is formed between the anode electrode and the cathode electrode. When water flows through the reaction area, hydrogen peroxide (H2O2) and / or hydroxyl radicals (OH) are / is electrochemically generated on the surface in situ by accurately adjusting the electrode potential of the difunctional anode, so that instant generation and instant utilization of active oxygen are realized. The active oxygen directly enters a washing system of the washing machine along with water flow, bacteria, viruses and fungi can be efficiently inactivated under the normal-temperature or low-temperature washing condition without additionally adding chemical disinfectants, organic stains and peculiar smell molecules are synchronously degraded, and green, efficient and intelligent healthy washing is achieved.

The present invention provides a vapor deposition device, comprising: a reaction chamber; a gas injection mechanism, located at the top of the reaction chamber; a susceptor, disposed the reaction chamber, a reaction zone being formed above the susceptor; a rotating shaft, connected to the susceptor; a shielding member, positioned in the reaction chamber and surrounding an inner wall of the reaction chamber, the shielding member comprising an isolation wall near the reaction zone, the isolation wall and the gas injection mechanism forming an enclosed spatial region that covers the reaction zone, a radial dimension of the spatial region gradually increasing from top to bottom, and an outer diameter of the lowest end of the shielding member matching an inner diameter of the reaction chamber; purge channels, distributed on the isolation wall, passing through the isolation wall and in communication with the spatial region, so as to allow a purge gas to be introduced into the spatial region. The vapor deposition device provided by the present invention can improve the production efficiency and quality of materials grown by the device, and extend the maintenance cycle of the reaction chamber.

The invention discloses a deep learning and automatic control chemical reactor and a resource recovery method, and relates to the technical field of hydrometallurgy, and the deep learning and automatic control chemical reactor comprises a chemical reactor, a motor, a heating device, a monitoring device, a data center and a PLC control system. Based on a PLC control system, a Transform-LSTM time sequence prediction model is integrated, so that real-time monitoring of parameters such as mixed liquid temperature, reaction chamber pressure, mixed liquid viscosity, conductivity and the like in a wet leaching reaction process can be realized; and the heating power of the heating device, the rotating speed of the motor, the raw material adding amount of the feeding port, the mixed material discharging time of the discharging port and the air displacement of the air exhaust port can be automatically and accurately controlled. The problems that stirring efficiency is low, parameter regulation and control are lagged, and manual experience is relied on are solved, through a predictive control strategy, the real-time monitoring and dynamic regulation level is remarkably improved, the wet leaching process is optimized, energy consumption is reduced, the high-grade metal leaching efficiency is improved, and the method is suitable for various wet metallurgy processes.

The invention relates to a carbon dioxide capture integrated system which comprises a carbon dioxide lean flue gas rear-end treatment unit, a carbon dioxide rear-end treatment unit and a plurality of integrated modules connected in parallel, the integrated module comprises at least one reactor, each reactor comprises a conductive shell, a heating part and a reaction cavity used for containing a solid adsorption material, and the heating parts are arranged outside the conductive shells and conduct heating in an electromagnetic heating mode. The inner diameter of the reactor is 300-500 mm, and the height of the reactor is 2.5-3 times of the inner diameter. The reactor has an adsorption mode, a desorption mode and a shutdown mode which can be switched; the number of the integrated modules can be adjusted according to the carbon dioxide capturing requirement. According to the system, the installation number of the small integrated modules can be flexibly adjusted according to the carbon dioxide trapping requirement, the carbon dioxide trapping requirements of different scales are met, electromagnetic heating is adopted, rapid and uniform heating of the solid adsorption material is effectively achieved, the power consumption of the system is greatly reduced, and then the trapping efficiency and economical efficiency of the system are improved.

The invention discloses a vacuum transmission valve and semiconductor thin film equipment, the semiconductor thin film equipment comprises a reaction chamber, a transmission chamber and a vacuum transmission valve, and the vacuum transmission valve is installed between the reaction chamber and the transmission chamber. The vacuum transmission valve comprises a valve box, a valve plate fixing shaft, a first sealing valve plate, a second sealing valve plate and a driving assembly, and the valve plate fixing shaft, the first sealing valve plate, the second sealing valve plate and the driving assembly are arranged in the valve box. The first sealing valve plate and the second sealing valve plate are detachably and fixedly arranged on the valve plate fixing shaft back to back in the radial direction of the valve plate fixing shaft. The driving assembly is used for driving the valve plate fixing shaft to drive the first sealing valve plate to move towards the first opening so as to seal the first opening, and driving the second sealing valve plate to move towards the second opening so as to seal the second opening. The two-way sealing valve plate integrally mounted on the valve plate fixing shaft is driven by the driving assembly to move to achieve two-way sealing, and the occupied space is reduced.

The invention relates to the technical field of wafer processing, in particular to a reaction chamber and plasma processing equipment, which comprises a quartz tube, an induction coil, a Faraday shield cage, a state monitoring device, a rotation driving device and a control unit, and is characterized in that the quartz tube is arranged at the top of a processing chamber; the induction coil is arranged around the outer side of the quartz tube; the Faraday shielding cage is provided with a slit, and the orthographic projection of the slit on the circumferential wall of the quartz tube forms an erosion area; the state monitoring device is used for monitoring the erosion area; the driving end of the rotary driving device is connected with the quartz tube or the Faraday shielding cage; the control unit is in communication connection with the state monitoring device and the rotary driving device; according to the invention, through real-time monitoring and an active regulation and control mechanism, the problem of concentrated erosion of plasma to the quartz tube in a high-hydrogen process is effectively solved.

The invention discloses a radio frequency plasma comprehensive testing device and method for an ion process system, and relates to the technical field of plasma testing, and the device comprises a host and a coupling probe; the coupling probe is placed on a radio frequency transmission line of an ion process system, is used for carrying out coupling sampling on radio frequency energy through a capacitance or inductance coupling mode according to an electromagnetic field coupling principle, obtains current and voltage signals through coupling, and is also used for sensing and obtaining real-time temperature data in the probe; the host comprises a main body shell and a shielding frame arranged in the main body shell, and a data processing and analyzing unit is arranged in the shielding frame and used for performing data processing on the received voltage, current and temperature signals; the radio frequency power supply power, the radio frequency power supply frequency spectrum, the impedance of the matcher and the vacuum reaction cavity and other ion process system parameter values are calculated and generated, and meanwhile clutter capture and radio frequency transmission harmonic wave test results in radio frequency transmission are output, so that the comprehensive test of the ion process system is realized.

The invention relates to the technical field of wafer processing equipment, in particular to a reaction cavity for a high-hydrogen process and plasma processing equipment, and the reaction cavity comprises a quartz tube; the first coil surrounds the outer side of the quartz tube and is connected with an external radio frequency power supply; the Faraday shielding cage is annularly arranged outside the quartz tube and between the quartz tube and the first coil, and a plurality of slits which penetrate through the side wall of the Faraday shielding cage and extend in the axial direction are formed in the Faraday shielding cage; the blocking piece is arranged in the quartz tube, and a structure formed by orthographic projection of the blocking piece on the circumferential side wall of the Faraday shielding cage covers a structure formed by orthographic projection of the first coil on the circumferential side wall of the Faraday shielding cage; the blocking piece is arranged in the quartz tube, so that concentrated bombardment of plasma generated in the high-hydrogen process on the inner wall of the quartz tube can be effectively blocked, the problems of erosion of the quartz tube and particle stripping are remarkably relieved, the process yield of plasma processing equipment is increased, and the service life of a machine table is prolonged.

The invention provides a pressure control system of an MOCVD (Metal Organic Chemical Vapor Deposition) reaction cavity and MOCVD epitaxial equipment, and the system comprises a cavity in which a reaction cavity is defined; the exhaust pipeline is communicated with the reaction cavity; the first pressure gauge is fixed on the cavity body, and the first pressure gauge is used for detecting the gas pressure in the reaction cavity; the exhaust valve is configured to control the exhaust flow through the opening degree of the valve; the vacuum pump is used for extracting gas in the reaction cavity; the mass flow controller is configured to be capable of detecting and controlling the flow of gas flowing into the reaction cavity; and the controller is configured to control the valve opening degree of the exhaust valve and / or control the gas inlet flow of the mass flow controller according to the gas pressure detected by the first pressure meter. According to the pressure control system of the MOCVD reaction chamber, the first pressure meter, the exhaust valve and the mass flow controller are arranged on the chamber body, and the gas pressure can be adjusted in real time, so that the product quality can be effectively improved.

The invention discloses a reaction cavity and a multi-stage series micro-channel reactor. The reaction cavity comprises a water-drop-shaped cavity shell and a built-in octopus-like shunting baffle, and a four-section type mixing flow channel is formed between the water-drop-shaped cavity shell and the built-in octopus-like shunting baffle; in the collision shearing section, fluid at a feeding hole impacts the head of the baffle at a high speed to realize forced shunting and primary shearing; according to the deceleration recombination section, a waist expansion flow channel reduces the flow speed and promotes fluid recombination and interface fusion. In the acceleration section, narrow channels between tentacles extrude and accelerate the fluid to enhance permeation and mixing; and in the mixing section, vortex breaking sharp corners are arranged at the tail parts of the baffles to eliminate vortexes and guide the vortexes to a discharge port. The multi-stage reactor is composed of a three-split-flow inlet unit, N reaction cavities connected in series and an outlet unit, and reverse parallel arrangement is achieved through a U-shaped pipe. Except for the reaction cavity, the interior of the reactor is of a solid structure, and the three-flow-dividing inlet adopts the design that a central pipeline is embedded into a peripheral pipeline, so that graded feeding control is realized. The structure has the characteristics of efficient microcosmic forced mixing and low flow resistance.

The invention relates to a preparation method and system for an atomic gas chamber for sapphire coating, and the preparation method comprises the steps: S1, placing a cleaned atomic gas chamber on a heating base station of a reaction chamber, and filling the reaction chamber with replacement gas to discharge residual gas in the reaction chamber; s2, filling aluminum source gas into the reaction chamber, and carrying out chemical adsorption on the wall surface of the atomic gas chamber to form a first film layer; s3, filling replacement gas into the reaction chamber to discharge residual aluminum source gas in the reaction chamber; s4, filling oxide gas into the reaction chamber to oxidize the first film layer and convert the first film layer into an aluminum oxide film layer; s5, filling replacement gas into the reaction chamber to discharge residual oxide gas in the reaction chamber; and S6, repeating the steps S2 to S5 to form a preset number of aluminum oxide film layers with a preset thickness on the wall surface of the atomic gas chamber so as to form the atomic gas chamber with the sapphire coating film. The anti-shielding capability of the alkali metal atomic gas chamber can be enhanced, and the electromagnetic wave precision measurement performance of the atomic gas chamber is improved.

The invention relates to the technical field of wastewater treatment, in particular to a multistage treatment device for industrial heavy metal wastewater, which comprises an integrated wastewater treatment tank, the integrated wastewater treatment tank is formed by combining a sedimentation tank, a reaction tank and a residue filtering tank, a dosing tank is fixedly mounted at the upper end of the reaction tank, and a dosing mechanism is arranged on the inner side of the dosing tank. The chemical feeding mechanism is combined with the mixing mechanism, so that the dynamic mixing of mixed liquid in the reaction cavity is ensured while intermittent chemical feeding during industrial wastewater reaction is realized, and the heavy metal precipitation reaction efficiency is improved; the aeration assembly is combined with the spherical frame, so that uniform aeration is realized, and meanwhile, the supporting strength of the whole structure of the spherical frame is ensured; by arranging the hoop reinforcing assembly, the spherical frame is hooped, so that the overall structure is reinforced, the hoop reinforcing assembly is combined with the uniform aeration assembly, the bidirectional locking effect of the spherical frame and the uniform aeration assembly is achieved, the waste water mixing and stirring effect is achieved, and multiple purposes are achieved.

The invention relates to the technical field of energy, in particular to a solar coupling hydrocarbon fuel reforming low-carbon oil displacement system which comprises a solar collecting lens, a gasification cavity, a reaction cavity, a solar heat collector, a condensation cavity, a hydrogen separation assembly and a catalyst. The solar collecting lens is arranged on one side of the solar heat collector; the gasification cavity and the reaction cavity are arranged in the solar heat collector; a hydrogen separation assembly and a catalyst are arranged in the reaction cavity, the gasification cavity is used for gasifying input excessive liquid water and hydrocarbon fuel to obtain gaseous hydrocarbon fuel and excessive water vapor, the gaseous hydrocarbon fuel and the excessive water vapor are subjected to a water vapor reforming reaction under the action of the catalyst, and generated hydrogen is discharged through the hydrogen separation assembly; the remaining carbon dioxide and water vapor are conveyed into a gas injection well to conduct oil displacement on an oil field; the condensation cavity is connected with the mining well. The efficient and environment-friendly device based on hydrocarbon fuel wet reforming directly heats and displaces oil by recovering hydrogen and residual reaction products, so that the energy utilization rate is increased, and carbon dioxide is recovered.

The invention discloses a portable nucleic acid detection micro-fluidic chip, a nucleic acid detection device and a nucleic acid detection method, and belongs to the field of micro-fluidic chips, a detection module comprises a quantitative chamber, a micro-channel, a reaction chamber, a first connecting channel and a color developing module; the reaction chamber comprises an RPA reaction chamber in which an RPA amplification reagent is pre-embedded, a porous filter membrane and a CRISPR reaction chamber in which a CRISPR detection component is pre-embedded, and the RPA reaction chamber, the porous filter membrane and the CRISPR reaction chamber are sequentially positioned at the same position of the three adjacent chip layers; the aperture of the porous filter membrane is larger than the particle size of an RPA amplification product and smaller than the particle size of a core enzyme in a CRISPR detection component; two ends of the micro-channel are respectively communicated with the quantitative chamber and the RPA reaction chamber; two ends of the first connecting channel are respectively communicated with the CRISPR reaction chamber and the color developing module; the flow resistance of the first connecting channel is smaller than that of the micro-channel. According to the invention, the sequential reaction of RPA amplification and CRISPR cleavage can be completed without depending on artificial transfer of amplification products.

The invention discloses a metallization coating method for a magnetic attraction jig, and relates to the technical field of atomic layer deposition of nano-coatings, and the metallization coating method comprises the following steps: cleaning the surface of a substrate by using an ultrasonic cleaning machine, transferring the cleaned substrate into low-temperature plasma equipment, and selecting argon to carry out plasma activation treatment; preparing a precursor solution, storing the precursor solution under the protection of inert gas, and mounting the substrate activated by the plasma into an ALD (Atomic Layer Deposition) clamp; aLD is started, reaction gas and circulation parameters of each circulation are set, the precursor solution is quantitatively conveyed to an ALD reaction chamber each time, and deposition operation is carried out; according to the method, the surface of the substrate is cleaned by using the ultrasonic cleaning machine, and argon is selected for plasma activation treatment, so that the strong binding force between the substrate and the plating layer is ensured, the stability and durability of the plating layer are improved, and the problem of insufficient adhesive force of the plating layer is solved.

The invention relates to a wafer surface temperature control system and a wafer surface temperature control method for MOCVD (Metal Organic Chemical Vapor Deposition) equipment, belongs to the technical field of electronic equipment, and solves the problem that the temperature data in Recipe cannot be modified in the growth process due to the fact that the temperature data in the Recipe is manually modified by the existing equipment before growth. According to the system, an infrared thermometer detects the surface temperature of a wafer in real time in a non-contact mode, and the wafer is arranged in a reaction chamber of MOCVD equipment; the equipment controller calculates a wafer temperature difference value within a preset time interval based on the wafer surface temperature and the wafer target temperature, and then updates the post-offset heater set temperature based on the wafer temperature difference value and the initial heater set temperature; the temperature controller provides a corresponding regulation voltage signal based on the updated offset heater set temperature; and the heater is heated or cooled based on the adjusting voltage signal so as to compensate the surface temperature of the wafer through the heated or cooled heater, so that the surface temperature of the wafer is close to the target temperature of the wafer. The real-time temperature of the surface of the wafer is accurately controlled, and the temperature control efficiency and stability are improved.

The present invention discloses a multifunctional and convenient reaction chamber for an electrically triggered Joule heating device and an operating method thereof, wherein the reaction chamber comprises a sealing cover and a base that are buckled together, wherein a first conductive fixing clamp and a second conductive fixing clamp are provided in parallel on the inner bottom plate of the base, wherein a sample fixing clamp is clamped and fixed between the first conductive fixing clamp and the second conductive fixing clamp, wherein electrodes are respectively mounted on both ends of a clamping plate on one side of the sample fixing clamp, and the electrodes at both ends are respectively in contact with and cooperate with the corresponding side clamps of the first conductive fixing clamp and the second conductive fixing clamp, wherein the sample is arranged between the clamping plates that are opposite to each other and the two ends of the sample are respectively in contact with and cooperate with the electrodes, and a cooling system is respectively provided on both sides of the sample fixing clamp. The present invention also discloses an operating method for a multifunctional and convenient reaction chamber for an electrically triggered Joule heating device. The present invention can achieve a higher precursor loading amount and a faster cooling speed, and can also meet the requirements of preparing a sample vacuum environment and a variety of reaction atmospheres.

The invention provides a method for growing gallium nitride on graphene based on a patterned silicon substrate. The method comprises the following steps: S1, selecting the patterned silicon substrate with a concave pattern; s2, directly growing a plurality of layers of graphene films on the patterned silicon substrate by using a chemical vapor deposition method; s3, growing a gallium nitride thin film on the patterned silicon substrate on which the graphene thin film is grown through a metal organic chemical vapor deposition method; s4, the graphene layer is arranged between the patterned silicon substrate and the gallium nitride thin film to serve as a buffer layer for gallium nitride growth, the gallium nitride thin film is grown through a high-low-temperature gallium nitride growth technology, that is, the temperature of the reaction chamber is increased to the temperature needed by low-temperature gallium nitride growth in the vacuum environment, the quality of graphene is improved, and the yield of the gallium nitride thin film is increased. In addition, due to the synergistic effect of the graphene layer and the patterned silicon substrate, the dislocation density of the gallium nitride epitaxial layer can be more effectively reduced, the quality of the epitaxial layer is improved, and the reliability of a gallium nitride device is enhanced.

A shutter liner for use in a chemical vapor deposition (CVD) system includes an upper portion that has a cylindrical shape and a lower portion that has an outwardly flared shape. The outwardly flared shape reduces deposition within the reaction chamber by providing an outwardly angled wall surface that occupies a horizontal gap between inner and outer liners that are contained within the reaction chamber.

The invention provides an orthogonal electromagnetic field confinement fusion device and a fusion method. The fusion device comprises a vacuum combustion furnace which comprises a fusion reaction chamber and an inductance tube; the central shaft is arranged in the vacuum combustion furnace in a penetrating manner, a constant potential difference is applied between the inner wall of the vacuum combustion furnace and the central shaft, and a radial polarization electric field is generated in the vacuum combustion furnace; the inductance coil is wound on the outer wall of the vacuum combustion furnace, generates an axial confinement magnetic field in the vacuum combustion furnace and generates a magnetic mirror in the fusion reaction chamber; the fusion method comprises the following steps: S1, constructing an orthogonal electromagnetic field; s2, feeding fuel; s3, radially polarizing the ion ring; s4, induction of FRC is carried out; s5, axial fusion is carried out; s6, energy recovery; the device has the effects of simplifying the nuclear fusion reaction device, reducing the cost of the nuclear fusion reaction and improving the efficiency of the nuclear fusion reaction.

The present invention relates to the technical field of medical instruments, and relates to the technical field of small amplification devices, especially portable amplification devices. Disclosed are a pressing and sealing apparatus for a POCT kit, and a molecular diagnostic device and operation method. The pressing and sealing apparatus for a POCT kit comprises a movable bracket, wherein a transmission assembly can drive the movable bracket to enable a sealing portion to seal a reaction chamber of the POCT kit when the movable bracket moves in a first direction; and when the transmission assembly drives the movable bracket to move in a second direction, a pressing portion comes into contact with the reaction chamber of the POCT kit to enable the reaction chamber of the POCT kit to tightly fit with a heat source. In the molecular diagnostic device including the pressing and sealing apparatus, a valve control portion and a clamping device share a second drive motor, a hot-melt bonding portion of the sealing portion and a detection and acquisition unit of the pressing portion share a first drive motor, a gas source drive part and a clamping apparatus cooperate with each other to drive liquid to flow through chambers of the kit, thereby achieving high integration, few drive parts, reliable operation, high detection accuracy, and small contamination.

The present invention belongs to the field of plating technology and specifically relates to an ALD-Parylene composite film layer, a deposition device, and a deposition method thereof. By reserving a vacuum gap between a heating plate and the outer wall of a cavity, a barrier is formed to isolate the heating plate from heat conduction to the outside of the cavity as the vacuum degree in the cavity increases during the reaction process, thereby avoiding heat loss caused by direct contact and damage to seals, thereby improving the coating effect. The ALD reaction and the Parylene reaction are combined in the same reaction chamber, and different pipeline designs and time-sharing control are used to form a composite film layer structure of alternating ALD film layers and Parylene film layers on the surface of the substrate. The density of the ALD film layer is conducive to enhancing the water resistance of the film layer and sealing the defects of the original Parylene film layer. The softness of the original coating is maintained, and it will not break when subjected to impact and thermal shock, which is conducive to improving the stability of the film layer.

The invention provides semiconductor process equipment and a use method thereof. The semiconductor process equipment comprises a reaction cavity; the evaporator comprises an evaporation cavity, a premixing head, a gas outlet, a carrier gas inlet and an ultrapure water inlet; the premixing head is located at the top of the evaporation cavity, and the carrier gas inlet and the ultrapure water inlet are communicated with the evaporation cavity through the premixing head; the gas outlet is positioned at the bottom of the evaporation cavity; wherein a sleeve structure with a heating function is arranged in the evaporation cavity; the sleeve structure comprises a first sleeve, a second sleeve and a third sleeve; the first sleeve is connected with the top of the evaporation cavity, the lower portion of the first sleeve is located in the evaporation cavity and suspended, and an opening of the premixing head is located in the first sleeve. The second sleeve is connected with the bottom of the evaporation cavity, the upper portion of the second sleeve is located in the evaporation cavity and suspended, and the air outlet is located in the second sleeve. The third sleeve is located in the middle of the evaporation cavity, the upper portion of the third sleeve is inserted into the first sleeve, the lower portion of the third sleeve is inserted into the second sleeve, and the upper portion and the lower portion of the third sleeve are not communicated.