29521 results about "Oxidizing agent" patented technology

The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionized water, forming a dielectric stack on the pre-treated surface and providing a flow of NH3 in a process zone surrounding the wafer. Alternately, the method includes pre-treating the HF-last surface with NH3, forming the stack after the pre-treating, and providing a flow of N2 in a process zone surrounding the wafer after the forming. The method also includes pre-treating the HF-last surface using an in-situ steam generation process, forming the stack on the pre-treated surface, and annealing the wafer after the forming. The pre-treating includes providing an inert gas flow in a process zone surrounding the HF-last surface, reacting hydrogen with an oxidizer in the process zone for a very short duration, and providing an inert gas flew in the process zone after the reacting.

A shower head formed by stacking a shower base, a gas diffusion plate, and a shower plate and supplying material gas and oxidizer gas to a wafer on a loading table through a first gas diffusion part and a second gas diffusion part formed in both faces of the gas diffusion plate, first gas outlets formed in the shower plate and communicating with a first gas diffusion space, and second gas outlets formed in the shower plate and communicating with a second gas diffusion space. A plurality of heat transfer columns fitted closely to the lower surface of the shower base are installed in the first gas diffusion part so that portions therebetween can form the first gas diffusion space, and radiant heat from the loading table is transmitted by the heat transfer columns in the thickness direction of the shower head.

An atomic layer deposition method to deposit an oxide nanolaminate thin film is provided. The method employs a nitrate ligand in a first precursor as an oxidizer for a second precursor to form the oxide nanolaminates. Using a hafnium nitrate precursor and an aluminum precursor, the method is well suited for the deposition of a high k hafnium oxide / aluminum oxide nanolaminate dielectric for gate dielectric or capacitor dielectric applications on a hydrogen-terminated silicon surface.

The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical / ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.

An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system. The method comprises first loading a plurality of wafers into a process chamber, and then pre-treating the plurality of wafers in the process chamber with a first oxidizer. After pre-treating the wafers, and without removing the wafers from the process chamber, the method then comprises depositing HfO2 on the plurality of wafers by atomic layer deposition, which comprises a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers in the process chamber to a second oxidizer and a hafnium precursor. The hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH).

Methods of forming an interfacial layer on a hydrogen-passivated substrate are provided. These methods utilize atomic layer deposition techniques incorporating metal nitrate-based precursors, such as hafnium nitrate or zirconium nitrate, without introducing a hydrating agent, or oxidizing agent, such as water, during the formation of the interfacial layer. Also provided are methods of forming high-k films, by first forming an interfacial layer on the surface of a hydrogen-passivated substrate, and then depositing one, or more, high-k dielectric films.

Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical / ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.

The invention aims at enabling leakage current characteristics and a step coverage property to be improved by depositing a hafnium silicate film by utilizing an atomic layer evaporation method using a hafnium raw material, a silicon raw material and an oxidizing agent. Disclosed herein is a method of manufacturing a semiconductor device having a trench capacitor including a first electrode formed on an inner surface of a trench, a capacitor insulating film formed on a surface of the first electrode, and a second electrode formed on a surface of the capacitor insulating film. The method includes the step of depositing the capacitor insulating film in a form of a hafnium silicate film by utilizing an atomic layer deposition method using a hafnium raw material, a silicon raw material and an oxidizing agent.

A high-k silicate atomic layer deposition method is disclosed. To produce a hafnium silicate layer, a substrate may be exposed to a pulse of a hafnium precursor, a pulse of an oxidizer, a pulse of a silicon precursor, and a pulse of another oxidizer. A catalyst may additionally be co-flowed with one or more reactants into the chamber through a separate inlet. Alternatively, the catalyst may be flowed to the chamber before the reactant is introduced in a soaking procedure. By either co-flowing the catalyst through separate inlets or by performing a catalyst soak, hafnium silicate formation may proceed at a fast rate and / or at a low temperature.

A combustor method and apparatus is provided. The method utilizes flameless combustion with one or more of three improvements to enhance ignition of the flameless combustor. A catalytic surface can be provided within a combustion chamber to provide flameless combustion at least in the vicinity of the catalytic surface at a temperature that is much lower than the autoignition temperature of fuel in air without the presence of the catalytic surface. Nitrous oxide or supplemental oxygen may also be used as an oxidant either instead of air or with air to reduce ignition temperatures. Further, electrical energy can be passed through the fuel conduit, raising the temperature of the conduit to a temperature above which the fuel will ignite when combined with the oxidant.

Described herein is a method for removing at least a portion of the carbon-containing species within an organosilicate (OSG) film by treating the OSG film with a chemical, such as but not limited to an oxidizer, exposing the OSG film to an energy source comprising ultraviolet light, or treating the OSG film with a chemical and exposing the OSG film to an energy source.

Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and / or trenches).

In a method of forming an oxide layer using an atomic layer deposition and a method of forming a capacitor of a semiconductor device using the same, a precursor including an amino functional group is introduced onto a substrate to chemisorb a portion of the precursor on the substrate. Then, the non-chemisorbed precursor is removed. Thereafter, an oxidant is introduced onto the substrate to chemically react the chemisorbed precursor with the oxidant to form an oxide layer on the substrate. A deposition rate is fast and an oxide layer having a good deposition characteristic may be obtained. Also, a thin oxide film having a good step coverage and a decreased pattern loading rate can be formed.

The invention includes a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer having a varied concentration of barium and strontium, and / or titanium, within the layer. A substrate is positioned within a chemical vapor deposition reactor. Barium and strontium are provided within the reactor by flowing at least one metal organic precursor to the reactor. Titanium is provided within the reactor. One or more oxidizers are flowed to the reactor. In one aspect, conditions are provided within the reactor to be effective to deposit a barium strontium titanate comprising dielectric layer on the substrate from the reactants.

Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.

In preferred embodiments, the present invention relates to compositions comprising colloidal metals and / or metals for the treatment and prevention of skin conditions and / or diseases. More specifically, the disclosed metal containing compositions are useful as antioxidants, anti-aging agents, anti-wrinkle agents, anti-peroxidation agents, antimicrobial agents, anti-inflammatory agents, pain-relieving agents, wound recovery agents, sun-screens, sunblocks, and integument and skin-supporting agents when applied to the skin / integument, or administered generally to an animal or human body.

A method and apparatus are described for creating a fluid seal in a subterranean well structure having a fluid seal defect. The method comprises introducing a meltable repair material proximate a structure in a subterranean well which has a fluid seal defect or enhanced seal capacity is required or it is desired to temporarily or permanently hydraulically isolate a portion the well or strengthen the structural integrity of well tubulars or tubular hangers. Exothermic reactant materials are located proximate the meltable repair material. The exothermic reactant material is ignited or an exothermic reaction otherwise initiated which supplies heat to and melts the meltable repair material into a molten mass. The molten mass flows and solidifies across the structure and the fluid seal defect to effect a fluid seal in the subterranean well structure or the structural integrity is enhanced. Examples of preferred exothermic reactant materials include thermite, thermate, fusible chemical reactants such as ammonium chloride and sodium nitrate, and oxidizers and accompanying hydrocarbon based fuels. Examples of preferred meltable repair materials include solder or brazing materials and eutectic metals which expand upon cooling and solidifying from a molten state.

A method is described for selectively etching a high k dielectric layer that is preferably a hafnium or zirconium oxide, silicate, nitride, or oxynitride with a selectivity of greater than 2:1 relative to silicon oxide, polysilicon, or silicon. The plasma etch chemistry is comprised of one or more halogen containing gases such as CF4, CHF3, CH2F2, CH3F, C4F8, C4F6, C5F6, BCl3, Br2, HF, HCl, HBr, HI, and NF3 and leaves no etch residues. An inert gas or an inert gas and oxidant gas may be added to the halogen containing gas. In one embodiment, a high k gate dielectric layer is removed on portions of an active area in a MOS transistor. Alternatively, the high k dielectric layer is used in a capacitor between two conducting layers and is selectively removed from portions of an ILD layer.

A method for producing aromatic amino compound (V):by synthesizing intermediate compound (IV):by the reaction of compound (I): H2N—R1 with a mixture of halogenated aryl compounds (II): Ar1—X and (III): Ar2—X in the presence of a noble metal catalyst, followed by eliminating the substituent R1 from the nitrogen atom in compound (IV) under an acidic condition or an alkaline condition or by addition of a reducing agent or an oxidizing agent. (R1: a substituent having 2 to 50 carbon atoms; Ar1 and Ar2: a substituted or unsubstituted hydrocarbon group or heterocyclic group having 6 to 50 carbon atoms and the same with or different from each other; and X: a halogen group). The aromatic amino compound useful as the charge transporting material can be produced efficiently at a great yield without using highly toxic raw materials.

A system and method for co-production of hydrogen and electrical energy. The system comprises a fuel cell assembly comprising a plurality of fuel cells. The fuel cells further comprise a cathode inlet for receiving a compressed oxidant, an anode inlet for receiving a fuel feed stream, an anode outlet in fluid communication with an anode exhaust stream and a cathode outlet in fluid communication with a cathode exhaust stream. At least a portion of the fuel feed stream reacts with the oxidant to produce electrical power. The anode exhaust stream comprises hydrogen. The co-production system further comprises a separation unit in fluid communication with the fuel cell assembly. The separation unit is configured to receive the anode exhaust stream from the fuel cell assembly to separate hydrogen from the anode exhaust stream.

A non-toxic, non-hydroscopic percussion primer composition and methods of preparing the same, including at least one explosive component that has been traditionally considered a moderately insensitive explosive or secondary explosive, and at least fuel particle component having a particle size of about 1.5 microns to about 12 microns, which allows the use of moderately active metal oxidizers. The sensitivity of the primer composition is created by the interaction between the moderately insensitive explosive and the fuel agent such that traditional primary explosives such as lead styphnate or DDNP are not needed. The primer composition also eliminates the risks and dangers associated with traditional nano-sized fuel particles.

Disclosed is a process that relates to the recovery of a metal catalyst from an oxidizer purge stream produced in the synthesis of carboxylic acid, typically terephthalic acid. The process involves the addition of a wash solution to a high temperature molten dispersion to recover the metal catalyst and then subjecting an aqueous mixture or purified aqueous mixture so formed to a single stage extraction to remove organic impurities to produce an extract stream and a raffinate stream comprising the metal catalyst.

A primer composition that includes red phosphorus having an acid scavenger and a polymer thereon. The primer composition includes at least one other component that is substantially free of lead. The other component is at least one oxidizer, or at least one oxidizer and at least one of at least one secondary explosive composition and at least one energetic binder. The primer composition optionally includes at least one element having an ionic charge to ionic radius ratio of 4 or of 8, such as magnesium, zirconium, aluminum, silicon, titanium, tungsten, alloys thereof, and combinations thereof. The red phosphorus and the at least one oxidizer are present in the primer composition at approximately stoichiometric amounts. An ordnance element including the primer composition is also disclosed.

Methods for removing silicon nitride and elemental silicon during contact preclean process involve converting these materials to materials that are more readily etched by fluoride-based etching methods, and subsequently removing the converted materials by a fluoride-based etch. Specifically, silicon nitride and elemental silicon may be treated with an oxidizing agent, e.g., with an oxygen-containing gas in a plasma, or with O2 or O3 in the absence of plasma to produce a material that is more rich in Si—O bonds and is more easily etched with a fluoride-based etch. Alternatively, silicon nitride or elemental silicon may be doped with a number of doping elements, e.g., hydrogen, to form materials which are more easily etched by fluoride based etches. The methods are particularly useful for pre-cleaning contact vias residing in a layer of silicon oxide based material because they minimize the unwanted increase of critical dimension of contact vias.

The coverage characteristics or loading effect of an oxide film can be improved without having to increase the supply amount or time of an oxidant. There is provided method of manufacturing a semiconductor device. The method comprises loading at least one substrate to a processing chamber; forming an oxide film on the substrate by alternately supplying a first reaction material and a second reaction material containing oxygen atoms to the processing chamber while heating the substrate; and unloading the substrate from the processing chamber, wherein the forming of the oxide film is performed by keeping the substrate at a temperature equal to or lower than a self-decomposition temperature of the first reaction material and irradiating ultraviolet light to the second reaction material.

A method is provided for forming silicon oxide layers during the processing of semiconductor devices by applying a SOG layer including polysilazane to a substrate and then substantially converting the SOG layer to a silicon oxide layer using an oxidant solution. The oxidant solution may include one or more oxidants including, for example, ozone, peroxides, permanganates, hypochlorites, chlorites, chlorates, perchlorates, hypobromites, bromites, bromates, hypoiodites, iodites, iodates and strong acids.