12414 results about "Oxidizing agent" patented technology

A shower head formed by stacking a shower base, a gas diffusion plate, and a shower plate and supplying material gas and oxidizer gas to a wafer on a loading table through a first gas diffusion part and a second gas diffusion part formed in both faces of the gas diffusion plate, first gas outlets formed in the shower plate and communicating with a first gas diffusion space, and second gas outlets formed in the shower plate and communicating with a second gas diffusion space. A plurality of heat transfer columns fitted closely to the lower surface of the shower base are installed in the first gas diffusion part so that portions therebetween can form the first gas diffusion space, and radiant heat from the loading table is transmitted by the heat transfer columns in the thickness direction of the shower head.

An in situ method for forming a HfO₂ high-k dielectric layer in a batch wafer processing system. The method comprises first loading a plurality of wafers into a process chamber, and then pre-treating the plurality of wafers in the process chamber with a first oxidizer. After pre-treating the wafers, and without removing the wafers from the process chamber, the method then comprises depositing HfO₂ on the plurality of wafers by atomic layer deposition, which comprises a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers in the process chamber to a second oxidizer and a hafnium precursor. The hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH).

The invention aims at enabling leakage current characteristics and a step coverage property to be improved by depositing a hafnium silicate film by utilizing an atomic layer evaporation method using a hafnium raw material, a silicon raw material and an oxidizing agent. Disclosed herein is a method of manufacturing a semiconductor device having a trench capacitor including a first electrode formed on an inner surface of a trench, a capacitor insulating film formed on a surface of the first electrode, and a second electrode formed on a surface of the capacitor insulating film. The method includes the step of depositing the capacitor insulating film in a form of a hafnium silicate film by utilizing an atomic layer deposition method using a hafnium raw material, a silicon raw material and an oxidizing agent.

A high-k silicate atomic layer deposition method is disclosed. To produce a hafnium silicate layer, a substrate may be exposed to a pulse of a hafnium precursor, a pulse of an oxidizer, a pulse of a silicon precursor, and a pulse of another oxidizer. A catalyst may additionally be co-flowed with one or more reactants into the chamber through a separate inlet. Alternatively, the catalyst may be flowed to the chamber before the reactant is introduced in a soaking procedure. By either co-flowing the catalyst through separate inlets or by performing a catalyst soak, hafnium silicate formation may proceed at a fast rate and/or at a low temperature.

A combustor method and apparatus is provided. The method utilizes flameless combustion with one or more of three improvements to enhance ignition of the flameless combustor. A catalytic surface can be provided within a combustion chamber to provide flameless combustion at least in the vicinity of the catalytic surface at a temperature that is much lower than the autoignition temperature of fuel in air without the presence of the catalytic surface. Nitrous oxide or supplemental oxygen may also be used as an oxidant either instead of air or with air to reduce ignition temperatures. Further, electrical energy can be passed through the fuel conduit, raising the temperature of the conduit to a temperature above which the fuel will ignite when combined with the oxidant.

Described herein is a method for removing at least a portion of the carbon-containing species within an organosilicate (OSG) film by treating the OSG film with a chemical, such as but not limited to an oxidizer, exposing the OSG film to an energy source comprising ultraviolet light, or treating the OSG film with a chemical and exposing the OSG film to an energy source.

Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and/or trenches).

In a method of forming an oxide layer using an atomic layer deposition and a method of forming a capacitor of a semiconductor device using the same, a precursor including an amino functional group is introduced onto a substrate to chemisorb a portion of the precursor on the substrate. Then, the non-chemisorbed precursor is removed. Thereafter, an oxidant is introduced onto the substrate to chemically react the chemisorbed precursor with the oxidant to form an oxide layer on the substrate. A deposition rate is fast and an oxide layer having a good deposition characteristic may be obtained. Also, a thin oxide film having a good step coverage and a decreased pattern loading rate can be formed.

Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a silicon source chemical, metal source chemical, and an oxidizing agent, wherein the metal source chemical is the next reactant provided after the silicon source chemical. Methods according to some embodiments can be used to form silicon-rich hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surface.

In preferred embodiments, the present invention relates to compositions comprising colloidal metals and/or metals for the treatment and prevention of skin conditions and/or diseases. More specifically, the disclosed metal containing compositions are useful as antioxidants, anti-aging agents, anti-wrinkle agents, anti-peroxidation agents, antimicrobial agents, anti-inflammatory agents, pain-relieving agents, wound recovery agents, sun-screens, sunblocks, and integument and skin-supporting agents when applied to the skin/integument, or administered generally to an animal or human body.

A method and apparatus are described for creating a fluid seal in a subterranean well structure having a fluid seal defect. The method comprises introducing a meltable repair material proximate a structure in a subterranean well which has a fluid seal defect or enhanced seal capacity is required or it is desired to temporarily or permanently hydraulically isolate a portion the well or strengthen the structural integrity of well tubulars or tubular hangers. Exothermic reactant materials are located proximate the meltable repair material. The exothermic reactant material is ignited or an exothermic reaction otherwise initiated which supplies heat to and melts the meltable repair material into a molten mass. The molten mass flows and solidifies across the structure and the fluid seal defect to effect a fluid seal in the subterranean well structure or the structural integrity is enhanced. Examples of preferred exothermic reactant materials include thermite, thermate, fusible chemical reactants such as ammonium chloride and sodium nitrate, and oxidizers and accompanying hydrocarbon based fuels. Examples of preferred meltable repair materials include solder or brazing materials and eutectic metals which expand upon cooling and solidifying from a molten state.

CMP slurries comprising at least an abrasive, at least an organic phosphonate, at least an oxidizer, and water are disclosed. The slurries can optionally include corrosion inhibitors, surfactants, polymers, and bases. The concentrations of the ingredients in the slurries can be appropriately chosen to formulate copper CMP slurry and barrier CMP slurry. The copper CMP slurries are capable of polishing copper at high removal rate and having high selectivity to tantalum barrier. The barrier slurries deliver good planarity and have high hydrogen peroxide stability.

A system and method for co-production of hydrogen and electrical energy. The system comprises a fuel cell assembly comprising a plurality of fuel cells. The fuel cells further comprise a cathode inlet for receiving a compressed oxidant, an anode inlet for receiving a fuel feed stream, an anode outlet in fluid communication with an anode exhaust stream and a cathode outlet in fluid communication with a cathode exhaust stream. At least a portion of the fuel feed stream reacts with the oxidant to produce electrical power. The anode exhaust stream comprises hydrogen. The co-production system further comprises a separation unit in fluid communication with the fuel cell assembly. The separation unit is configured to receive the anode exhaust stream from the fuel cell assembly to separate hydrogen from the anode exhaust stream.

Disclosed is a process that relates to the recovery of a metal catalyst from an oxidizer purge stream produced in the synthesis of carboxylic acid, typically terephthalic acid. The process involves the addition of a wash solution to a high temperature molten dispersion to recover the metal catalyst and then subjecting an aqueous mixture or purified aqueous mixture so formed to a single stage extraction to remove organic impurities to produce an extract stream and a raffinate stream comprising the metal catalyst.

Methods for removing silicon nitride and elemental silicon during contact preclean process involve converting these materials to materials that are more readily etched by fluoride-based etching methods, and subsequently removing the converted materials by a fluoride-based etch. Specifically, silicon nitride and elemental silicon may be treated with an oxidizing agent, e.g., with an oxygen-containing gas in a plasma, or with O₂ or O₃ in the absence of plasma to produce a material that is more rich in Si—O bonds and is more easily etched with a fluoride-based etch. Alternatively, silicon nitride or elemental silicon may be doped with a number of doping elements, e.g., hydrogen, to form materials which are more easily etched by fluoride based etches. The methods are particularly useful for pre-cleaning contact vias residing in a layer of silicon oxide based material because they minimize the unwanted increase of critical dimension of contact vias.

The coverage characteristics or loading effect of an oxide film can be improved without having to increase the supply amount or time of an oxidant. There is provided method of manufacturing a semiconductor device. The method comprises loading at least one substrate to a processing chamber; forming an oxide film on the substrate by alternately supplying a first reaction material and a second reaction material containing oxygen atoms to the processing chamber while heating the substrate; and unloading the substrate from the processing chamber, wherein the forming of the oxide film is performed by keeping the substrate at a temperature equal to or lower than a self-decomposition temperature of the first reaction material and irradiating ultraviolet light to the second reaction material.

This invention is related to so-called combined cycle co-generation installations, and it addresses present concerns of the industry. Among these, combustion stability, corrosion (due to large water content in the flue gases), large heat transfer areas, and the like. In some embodiments, an additional heat exchanger is added to heat combustion air with a portion of the exhaust gases resulting from an engine, preferably a gas turbine. As a result, the efficiency of the cycle will improve, the oxidant will be enriched by above 50% oxygen, the combustion process will be enhanced, and the dimensions of the boiler may be reduced. It is considered that the combustion air will require between 10% and 80% of the total flue gas volume, more preferably between 20% and 40%. This is the portion of the flue gases sent through the heat exchanger. A control system designed to optimize the flow of the different streams is also presented. Other inventive embodiments forego heat exchanges in lieu of precise control of two flows of exhaust gas, with preferred addition of additional oxidant to the boiler bumers.

The present invention provides a well treatment fluid for use in a well, the well treatment fluid comprising water; an amine-based polymer; an polysaccharide-based polymer; and an oxidizing agent that is capable of at least partially oxidizing at least the polysaccharide-based polymer. The present invention also provides a method of treating a subterranean formation penetrated by a wellbore, the method comprising the steps of: (a) forming a well treatment fluid comprising water; an amine-based polymer; a polysaccharide-based polymer; and an oxidizing agent that is capable of at least partially oxidizing at least a portion of the polysaccharide-based polymer; and (b) contacting the well treatment fluid with the subterranean formation. The present invention also provides a method of treating a subterranean formation penetrated by a wellbore, the method comprising the steps of: (a) forming a well treatment fluid comprising water; an amine-based polymer; and a polysaccharide-based polymer; (b) contacting the subterranean formation with the well treatment fluid; and (c) contacting the subterranean formation with an oxidizing agent that is capable of at least partially oxidizing at least a portion of the polysaccharide-based polymer in the well treatment fluid present therein.

A process to produce terephthalic acid is provided, the process including the steps of: providing a feed stream comprising a dialkyl substituted aromatic and in an organic acid solvent: contacting the feed stream with an oxidant, the oxidant containing at least 50% by volume oxygen and at an oxygen partial pressure of at least 1 psia, at a temperature between about 80 DEG C. and about 130 DEG C., in the presence of a catalyst system comprising zirconium and cobalt, wherein the contacting is done in a stirred tank reactor; removing from the stirred tank reactor a vapor stream comprising the organic acid, water vapor and unreacted oxidant; condensing at least a portion of the organic acid and water from the vapor stream; separating at least a portion of the water from the organic acid back to the stirred tank reactor; returning at least a portion of the condensed organic acid back to the stirred tank reactor; continuously recovering from the stirred tank reactor a product comprising a diacid substituted aromatic; isolating solid crystals of diacid substituted aromatic from the reactor product; and recovering from the solid crystals a diacid substituted aromatic having a purity of preferably at least 97% by weight.

A process for modifying an unsaturated polyol fatty acid ester stock, such as an unsaturated triacylglycerol oil, to enhance its reactivity provided. The method includes reacting the unsaturated polyol fatty acid ester stock with an oxygenating agent, such as an oxygen-containing gas. Tempering oils containing reactive polyol fatty acid esters and methods for their production and use are also provided.

A method of making a tissue-derived implantable medical device that includes contacting the tissue with a composition comprising at least one oxidizing agent prior to implantation of the medical device.

A method of thermally processing a tobacco material is provided, the method including the steps of (i) mixing a tobacco material, water, and an additive selected from the group consisting of lysine, glycine, histidine, alanine, methionine, glutamic acid, aspartic acid, proline, phenylalanine, valine, arginine, di- and trivalent cations, asparaginase, saccharides, phenolic compounds, reducing agents, compounds having a free thiol group, oxidizing agents, oxidation catalysts, plant extracts, and combinations thereof, to form a moist tobacco mixture; (ii) heating the moist tobacco mixture at a temperature of at least about 60° C. to form a heat-treated tobacco mixture; and (iii) incorporating the heat-treated tobacco mixture into a tobacco product. Heat-treated tobacco composition prepared according to the method are also provided, such as heat-treated smokeless tobacco composition comprising a tobacco material, water, flavorant, binder, and filler, the heat-treated smokeless tobacco composition having an acrylamide content of less than about 2000 ppb.

The present invention relates to antimicrobial compositions including a critical, near critical, or supercritical (densified) fluid and an antimicrobial agent, to methods of forming these compositions, and to methods employing these compositions. An antimicrobial agent can be generated in the presence of a densified fluid, for example, by reacting an oxidizing agent with a precursor to the antimicrobial agent.

The present invention provides a process for forming cement in a well bore. In this process, a cement composition is formed that comprises a cement and one or more beads mixed with the cement. The cement composition containing the beads is displaced into the well bore, and an inert gas phase is introduced to the cement composition to control a density of the cement composition. The inert gas phase can be introduced by adding a gas generating material to the cement composition and/or a porous material to the cement composition. In an embodiment, the gas generating material is a nitrogen generating material that may be activated by an oxidizing agent. In another embodiment, the gas generating material is a hydrogen generating material, e.g., an aluminum powder. The present invention further provides a cement composition comprising a cement, one or more beads combined with the cement, and an inert gas phase created by, e.g., a gas generating material and/or a porous material.

Chelating ligand precursors for the preparation of olefin metathesis catalysts are disclosed. The resulting catalysts are air stable monomeric species capable of promoting various metathesis reactions efficiently, which can be recovered from the reaction mixture and reused. Internal olefin compounds, specifically beta-substituted styrenes, are used as ligand precursors. Compared to terminal olefin compounds such as unsubstituted styrenes, the beta-substituted styrenes are easier and less costly to prepare, and more stable since they are less prone to spontaneous polymerization. Methods of preparing chelating-carbene metathesis catalysts without the use of CuCl are disclosed. This eliminates the need for CuCl by replacing it with organic acids, mineral acids, mild oxidants or even water, resulting in high yields of Hoveyda-type metathesis catalysts. The invention provides an efficient method for preparing chelating-carbene metathesis catalysts by reacting a suitable ruthenium complex in high concentrations of the ligand precursors followed by crystallization from an organic solvent.

A self-cooled oxidant-fuel burner consisting novel fuel and oxidant nozzles and three compartment refractory burner block design is proposed. The new oxidant-fuel burner can fire in high-temperature (2200 DEG F. to 3000 DEG F.) and high-particulate (or high process volatiles/condensates) furnaces without over-heating or causing chemical corrosion damage to it's metallic burner nozzle and refractory burner block interior. Using various embodiments of nozzle and block shape, the burner can offer a traditional cylindrical flame or flat flame depending on the heating load requirements. The new features of this burner include unique fuel nozzle design for the streamline mixing of fuel and oxidant streams, a controlled swirl input to the oxidant flow for desired flame characteristics, a controlled expansion of flame envelope in the radial and axial dimensions, and efficient sweeping of burner block interior surface using oxidant to provide convective cooling and prevent any build up of process particulates. In addition, a relatively thick wall metallic nozzle construction with heat conduction fins enable efficient heat dissipation from the nozzle tip and providing a maintenance free burner operation.

Etching solutions are disclosed for etching low-k dielectric layers on substrates, said solutions including effective proportions of an oxidant for oxidizing a low-k dielectric layer and effective proportions of an oxide etchant for removing oxides. It is possible to easily remove a low-k dielectric layer using such etching solutions by a single-stage treatment process.

A CMP composition containing 5-aminotetrazole, e.g., in combination with oxidizing agent, chelating agent, abrasive and solvent. Such CMP composition advantageously is devoid of BTA, and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper, even in the presence of substantial levels of copper ions, e.g., Cu<2+>, in the bulk CMP composition at the copper/CMP composition interface during CMP processing.

A dye, such as a fluorescent dye, is incorporated into polymer microparticles using a solvent system composed of a first solvent in which the dye and the microparticle polymer are soluble, a second solvent in which the dye and the microparticle polymer are not or only weakly soluble, and a third solvent in which the dye and the microparticle polymer are not or only weakly soluble. The first and second solvents are immiscible with each other, or at most partially miscible. The third solvent is miscible with the first and second solvents. The formulation provides substantially complete partitioning of the dye to the microparticles. The method may be used to obtain dyed polymer microparticle formed of cross-linked or non-cross-linked polymers. Libraries are provided comprising two or more sets of microparticles of different dye loadings. Fluorescent core-shell microparticles are produced from a mixture of microparticle cores incorporating one or more fluorescent dyes, a polymerization mixture comprising at least one polymerizable shell monomer, at least one free radical polymerization initiator comprising a water-insoluble oxidizing agent, and at least one water-soluble reducing agent.

A CMP composition containing a rheology agent, e.g., in combination with oxidizing agent, chelating agent, inhibiting agent, abrasive and solvent. Such CMP composition advantageously increases the materials selectivity in the CMP process and is useful for polishing surfaces of copper elements on semiconductor substrates, without the occurrence of dishing or other adverse planarization deficiencies in the polished copper.