29505 results about "Oxidizing agent" patented technology

The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

A method of forming a dielectric stack on a pre-treated surface. The method comprises pre-cleaning a semiconductor wafer to remove native oxide, such as by applying hydroflouric acid to form an HF-last surface, pre-treating the HF-last surface with ozonated deionized water, forming a dielectric stack on the pre-treated surface and providing a flow of NH3 in a process zone surrounding the wafer. Alternately, the method includes pre-treating the HF-last surface with NH3, forming the stack after the pre-treating, and providing a flow of N2 in a process zone surrounding the wafer after the forming. The method also includes pre-treating the HF-last surface using an in-situ steam generation process, forming the stack on the pre-treated surface, and annealing the wafer after the forming. The pre-treating includes providing an inert gas flow in a process zone surrounding the HF-last surface, reacting hydrogen with an oxidizer in the process zone for a very short duration, and providing an inert gas flew in the process zone after the reacting.

An atomic layer deposition method to deposit an oxide nanolaminate thin film is provided. The method employs a nitrate ligand in a first precursor as an oxidizer for a second precursor to form the oxide nanolaminates. Using a hafnium nitrate precursor and an aluminum precursor, the method is well suited for the deposition of a high k hafnium oxide / aluminum oxide nanolaminate dielectric for gate dielectric or capacitor dielectric applications on a hydrogen-terminated silicon surface.

The present invention meets these needs by providing improved methods of filling gaps. In certain embodiments, the methods involve placing a substrate into a reaction chamber and introducing a vapor phase silicon-containing compound and oxidant into the chamber. Reactor conditions are controlled so that the silicon-containing compound and the oxidant are made to react and condense onto the substrate. The chemical reaction causes the formation of a flowable film, in some instances containing Si—OH, Si—H and Si—O bonds. The flowable film fills gaps on the substrates. The flowable film is then converted into a silicon oxide film, for example by plasma or thermal annealing. The methods of this invention may be used to fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.

Methods of forming an interfacial layer on a hydrogen-passivated substrate are provided. These methods utilize atomic layer deposition techniques incorporating metal nitrate-based precursors, such as hafnium nitrate or zirconium nitrate, without introducing a hydrating agent, or oxidizing agent, such as water, during the formation of the interfacial layer. Also provided are methods of forming high-k films, by first forming an interfacial layer on the surface of a hydrogen-passivated substrate, and then depositing one, or more, high-k dielectric films.

Systems and methods are delineated which, among other things, are for depositing a film on a substrate that is within a reaction chamber. In an exemplary method, the method may comprise applying an atomic layer deposition cycle to the substrate, wherein the cycle may comprise exposing the substrate to a precursor gas for a precursor pulse interval and then removing the precursor gas thereafter, and exposing the substrate to an oxidizer comprising an oxidant gas and a nitrogen-containing species gas for an oxidation pulse interval and then removing the oxidizer thereafter. Aspects of the present invention utilize molecular and excited nitrogen-oxygen radical / ionic species in possible further combination with oxidizers such as ozone. Embodiments of the present invention also include electronic components and systems that include devices fabricated with methods consistent with the present invention.

The invention includes a chemical vapor deposition method of forming a barium strontium titanate comprising dielectric layer having a varied concentration of barium and strontium, and / or titanium, within the layer. A substrate is positioned within a chemical vapor deposition reactor. Barium and strontium are provided within the reactor by flowing at least one metal organic precursor to the reactor. Titanium is provided within the reactor. One or more oxidizers are flowed to the reactor. In one aspect, conditions are provided within the reactor to be effective to deposit a barium strontium titanate comprising dielectric layer on the substrate from the reactants.

Methods for forming metal silicate films are provided. The methods comprise contacting a substrate with alternating and sequential vapor phase pulses of a metal source chemical, a silicon source chemical and an oxidizing agent. In preferred embodiments, an alkyl amide metal compound and a silicon halide compound are used. Methods according to preferred embodiments can be used to form hafnium silicate and zirconium silicate films with substantially uniform film coverages on substrate surfaces comprising high aspect ratio features (e.g., vias and / or trenches).

A method is described for selectively etching a high k dielectric layer that is preferably a hafnium or zirconium oxide, silicate, nitride, or oxynitride with a selectivity of greater than 2:1 relative to silicon oxide, polysilicon, or silicon. The plasma etch chemistry is comprised of one or more halogen containing gases such as CF4, CHF3, CH2F2, CH3F, C4F8, C4F6, C5F6, BCl3, Br2, HF, HCl, HBr, HI, and NF3 and leaves no etch residues. An inert gas or an inert gas and oxidant gas may be added to the halogen containing gas. In one embodiment, a high k gate dielectric layer is removed on portions of an active area in a MOS transistor. Alternatively, the high k dielectric layer is used in a capacitor between two conducting layers and is selectively removed from portions of an ILD layer.

A method for producing aromatic amino compound (V):by synthesizing intermediate compound (IV):by the reaction of compound (I): H2N—R1 with a mixture of halogenated aryl compounds (II): Ar1—X and (III): Ar2—X in the presence of a noble metal catalyst, followed by eliminating the substituent R1 from the nitrogen atom in compound (IV) under an acidic condition or an alkaline condition or by addition of a reducing agent or an oxidizing agent. (R1: a substituent having 2 to 50 carbon atoms; Ar1 and Ar2: a substituted or unsubstituted hydrocarbon group or heterocyclic group having 6 to 50 carbon atoms and the same with or different from each other; and X: a halogen group). The aromatic amino compound useful as the charge transporting material can be produced efficiently at a great yield without using highly toxic raw materials.

A non-toxic, non-hydroscopic percussion primer composition and methods of preparing the same, including at least one explosive component that has been traditionally considered a moderately insensitive explosive or secondary explosive, and at least fuel particle component having a particle size of about 1.5 microns to about 12 microns, which allows the use of moderately active metal oxidizers. The sensitivity of the primer composition is created by the interaction between the moderately insensitive explosive and the fuel agent such that traditional primary explosives such as lead styphnate or DDNP are not needed. The primer composition also eliminates the risks and dangers associated with traditional nano-sized fuel particles.

A primer composition that includes red phosphorus having an acid scavenger and a polymer thereon. The primer composition includes at least one other component that is substantially free of lead. The other component is at least one oxidizer, or at least one oxidizer and at least one of at least one secondary explosive composition and at least one energetic binder. The primer composition optionally includes at least one element having an ionic charge to ionic radius ratio of 4 or of 8, such as magnesium, zirconium, aluminum, silicon, titanium, tungsten, alloys thereof, and combinations thereof. The red phosphorus and the at least one oxidizer are present in the primer composition at approximately stoichiometric amounts. An ordnance element including the primer composition is also disclosed.