8 results about "Thin oxide" patented technology

A device including an inverter circuit, a hysteresis control circuit, and a high-side input level shifter. The inverter circuit having an output and including at least two series connected PMOS transistors connected, at the output, in series to at least two series connected NMOS transistors. The hysteresis control circuit coupled to the output to provide feedback to the at least two series connected PMOS transistors and to the at least two series connected NMOS transistors. The high-side input level shifter connected to gates of the at least two PMOS transistors and configured to shift a low level of an input signal to a higher level and provide the higher level to one or more of the gates of the at least two PMOS transistors.

The application belongs to the technical field of surface defect detection, and particularly relates to a forging part surface defect detection device, which comprises a base and a PLC control host computer, and further comprises: a material clamping and transferring mechanism fixedly arranged on the base and used for fixing an annular forging part to be detected; a pretreatment mechanism fixedly connected to one side of the upper end of the base and used for treating impurities and dirt on the surface of the forging part before detection; a positive heating mechanism fixedly connected to the rear side of the upper end of the base and located directly above the material clamping and transferring mechanism; and a thermal imaging detection mechanism. The application is adapted to high-temperature working conditions by means of non-contact detection, is not affected by material magnetism and conductivity, can penetrate a thin oxide layer, quickly covers a complex curved surface, accurately identifies micro-cracks, pits and other defects, greatly improves detection accuracy and efficiency, and simultaneously reduces manual labor intensity.

Various embodiments of methods are provided herein for oxidizing a surface of a semiconductor substrate. In the disclosed embodiments, gas-phase oxidizing free radicals are generated and used to oxidize an exposed surface of a material and form a thin oxide film there on. The gas-phase oxidizing free radicals are generated via ultraviolet (UV) photolysis of vaporized peroxide solutions. In some embodiments, an aqueous hydrogen peroxide (H2O2) solution is vaporized and photolyzed with UV light to form gas-phase hydroxyl (HO*) free radicals, which oxidize the exposed surface of the material to form a thin oxide film on the exposed surface of the material.

With this invention, electronic circuit components such as transistors, diodes, zener diodes and varicap diodes, which are conventionally manufactured with semiconductors, can be produced without semiconductors by means of a much simpler and cheaper technology, and by the same technology a compensation capacitor can be manufactured whose capacitance is automatically varied so as to follow changes in the load simultaneously. This principle may also be applied in other areas such as microwaves. In simple terms, the electric and magnetic fields of the main capacitor are blocked by a control voltage and varied between zero and maximum values, and as a result the capacitance of the main capacitor is changed. The fundamental principle here is the control of the electric and magnetic fields between the two conductive plates of a fixed-capacitance capacitor. For this purpose, a control voltage is applied between a third metallic plate, designed as a grid or similar structure so as not to block the electric and magnetic fields of the main capacitor and placed closer to one of the two plates, and the adjacent metallic plate, while a DC voltage (VDD) of suitable value for the circuit is applied across the terminals of the main capacitor. In a slightly different version, two grids are provided so that the structure can be used both as a diode and as a transistor. In both cases, the capacitance value of the main capacitor varies depending on the control voltage, i.e. Co = f(Vi). This means that, similar to classical transistors, the impedance of the circuit varies depending on the control voltage. In this structure, which exhibits behaviour similar to FET transistors, the output voltage is taken across the two outer plates of the capacitor with a design similar to a classical transistor circuit. In the production stage, the dielectric will be formed by coating very thin special plastic or other suitable materials with an appropriate metal of suitable thickness for the design and winding it in roll form. Likewise, dielectric layers may also be formed as very thin oxide or other non-conductive chemical compounds on the surfaces of the metallic 24 plates. That is, use will be made of conventional capacitor technologies such as ceramic, tantalum and electrolytic capacitors. In addition, different methods may be developed depending on the field of application. These designs will find application areas as semiconductor-free transistors, diodes, voltage-controlled variable capacitors, and many other uses, some of which have been explained in this project.

The present application relates to the technical field of automobile wheel manufacturing technology, and particularly relates to a lightweight hot stamping wheel composite forming manufacturing method, comprising the following steps: S1, sequentially performing surface pretreatment on steel material, and forming a matching passivation protective layer; S2, feeding into a hot stamping die for processing to obtain a spoke and a rim blank with uniform structure; S3, performing composite quenching heat treatment to form a uniform martensite structure in the blank matrix; S4, performing surface cleaning on the quenched spoke and rim blank to remove the thin oxide layer generated in the heat treatment process; S5, annularly welding the spoke and the rim to form a wheel semi-finished product; S6, performing accurate secondary induction heating on the weld and the surrounding annealing area; S7, performing gradient accurate water cooling treatment to re-form a uniform and strengthened martensite structure in the weld and the surrounding area; and S8, obtaining a finished lightweight hot stamping wheel after quality inspection. The present application solves the technical problems that the weld strength cannot be accurately reinforced and the overall performance of the wheel is uneven.

This invention discloses a method for preparing a tunneling oxide layer, a solar cell, and a method for preparing the same, relating to the field of photovoltaic technology. This invention optimizes the preparation process of the tunneling oxide layer by first performing pre-oxidation at low temperature with oxygen. Due to the slow deposition at low temperature, a thin oxide layer can be uniformly deposited on the silicon wafer throughout the furnace tube. Then, a hydrogen-containing atmosphere (such as H2 or Ar) is introduced to remove uneven thin layers and improve intra-wafer uniformity. Subsequently, oxygen is continuously introduced under high temperature and low pressure conditions to compensate for insufficient oxygen during rapid and uniform oxide layer deposition, thereby improving inter-wafer uniformity. Finally, a tunneling oxide layer with high uniformity both intra-wafer and inter-wafer is formed, thereby improving the uniformity of n-poly performance and ultimately increasing cell efficiency.

A semiconductor structure is formed using a nanosheet stack that is over a semiconductor substrate. The semiconductor structure includes multiple layers of work function that surround each channel of a plurality of channels in the nanosheet stack and are on the semiconductor substrate under the nanosheet stack. Adjacent layers of the work function metal in the semiconductor structure are separated by an oxide material. The oxide material is a very thin layer of an oxide with a thickness of several angstroms or less. The semiconductor structure includes an n-type work function metal that is over an outer layer of the multiple layers of the work function metal. The n-type work function metal can be an aluminum containing metal that is covered by a capping material under a gate electrode material.