2644results about How to "Fast switching speed" patented technology

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

A semiconductor device includes a thyristor configured to be formed through sequential joining of a first region of a first conductivity type, a second region of a second conductivity type opposite to the first conductivity type, a third region of the first conductivity type, and a fourth region of the second conductivity type, and have a gate formed over the third region. The first to fourth regions are formed in a silicon germanium region or germanium region.

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

A method is disclosed for controlling single-phase DC / AC converters, along with a converter arrangement having at least two single-phase DC / AC converters. A controller is provided which can control the at least two single-phase DC / AC converters, and an isolation transformer, wherein outputs of the at least two single-phase DC / AC converters are cascade-connected with each other and an input of the isolation transformer. The controller is configured to control the at least two single-phase DC / AC converters to deliver power from their inputs to their outputs by turns.

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.

A semiconductor switch is provided with a main element having reverse conductivity and serving as a voltage-driven switching element having a high withstand voltage, an auxiliary element serving as a voltage-driven switching element having a withstand voltage lower than that of the main element, and a high-speed freewheel diode having a withstand voltage equal to that of the main element, wherein a negative pole of the main element is connected to a negative pole of the auxiliary element to define the positive pole of the main element as a positive pole terminal and the positive pole of the auxiliary element as a negative pole terminal, and the high-speed freewheel diode is parallel-connected between the positive pole terminal and the negative pole terminal so that a direction from the negative pole terminal toward the positive pole terminal constitutes a forward direction.

A method of suppressing propagation of leakage current in an array of switching devices. The method includes providing a dielectric breakdown element integrally and serially connected to a switching element within each of the switching device. A read voltage (for example) is applied to a selected cell. The propagation of leakage current is suppressed by each of the dielectric breakdown element in unselected cells in the array. The read voltage is sufficient to cause breakdown in the selected cells but insufficient to cause breakdown in the serially connected, unselected cells in a specific embodiment. Methods to fabricate of such devices and to program, to erase and to read the device are provided.

Method to fabricate high-rise three-dimensional Integrated-Circuits (3D-ICs) is described. It has the major advantage over all the other known methods and prior arts to fabricate or manufacture 3D-ICs in that it substantially reduces RC-delays and fully eliminates or very substantially reduces the large and bulky electrically conductive Through-Silicon-VIAs in monolithic 3D integration. This enables the 3D-ICs to have faster operational speed with denser device integration.

The invention provides a master-slave connecting switching method of a Bluetooth headset. The method comprises the steps that a, host equipment and Bluetooth master equipment are connected through a first link, and the Bluetooth master equipment and Bluetooth slave equipment are connected through a second link; b, the Bluetooth master equipment stops receiving a data package sent by the host equipment, and link information of the first link is sent to the Bluetooth slave equipment; c, when the Bluetooth slave equipment receives the link information of the first link, an ACK confirmation identifier is returned; d, the Bluetooth slave equipment and the host equipment are connected by setting up a third link according to the received link information of the first link; e, when the Bluetooth slave equipment receives a data package, sent by the host equipment, of the third link, the Bluetooth slave equipment sends a confirmation identifier of successful package receiving to the Bluetooth master equipment, and meanwhile, the Bluetooth slave equipment is connected with the host equipment through the third link. According to the method, under the condition that the host equipment is not disconnected, the master equipment and slave equipment of the wireless headset perform seamless switching.

The present invention provides a high quality thin film comparable to a bulk single crystal and providres a semiconductor device with superior characteristics. A channel layer 11, for example, is formed of a semiconductor such as zinc oxide ZnO or the like. A source 12, a drain 13, a gate 14 and a gate insulating layer 15 are formed on the channel layer 111 to form an FET. For a substrate 16, a proper material is selected depending on a thin film material of the channel layer 11 in consideration of compatibility of both lattice constants. For example, if ZnO is used for the semiconductor of the channel layer as a base material, ScAlMgO4 or the like can be used for the substrate 16.

The present invention provides apparatuses and methods for modulating the transmissivity of electrochromic devices utilizing a controller that provides a continuous potential that may be pulsed to the electrochromic device.

A semiconductor structure and a method of manufacturing a silicon on insulator (SOI) structure having a silicon germanium (SiGe) layer interposed between the silicon and the insulator. According to one manufacturing method, a first SiGe layer, a silicon layer, and a second SiGe layer are epitaxially grown in sequence over a first substrate, and then an insulating layer is formed on the second SiGe layer. Then, impurity ions are implanted into a predetermined location of the first substrate underlying the first SiGe layer to form an impurity implantation region. A second substrate is bonded to the insulating layer on the first substrate. After the first substrate is separated along the impurity implantation region and removed, the first SiGe layer remaining on the surface of the separated region is removed so that the surface of the silicon layer may be exposed.

A method for forming thick oxide at the bottom of a trench formed in a semiconductor substrate includes forming a conformal oxide film that fills the trench and covers a top surface of the substrate. and etching the oxide film off the top surface of the substrate and inside the trench to leave a substantially flat layer of oxide having a target thickness at the bottom of the trench. The oxide film can be deposited by sub-atmospheric chemical vapor deposition processes, directional Tetraethoxysilate (TEOS) processes, or high density plasma deposition processes that form a thicker oxide at the bottom of the trench than on the sidewalls of the trench.

In one aspect, an input device having a flexible display and a three-dimensional sensitive layer for acquiring inputs is provided. The flexible display of the input device is advantageously very thin, pliable and energy-saving. The three-dimensional sensitive layer is embedded behind the display means as a 3D touch panel. Inputs on the display means can thus be sensitively identified on a three-dimensional basis, and implemented.

A semiconductor power device includes a drift region of a first conductivity type, a well region extending above the drift region and having a second conductivity type opposite the first conductivity type, an active trench extending through the well region and into the drift region, source regions having the first conductivity type formed in the well region adjacent the active trench, and a first termination trench extending below the well region and disposed at an outer edge of an active region of the device. The sidewalls and bottom of the active trench are lined with dielectric material, and substantially filled with a first conductive layer forming an upper electrode and a second conductive layer forming a lower electrode, the upper electrode being disposed above the lower electrode and separated therefrom by inter-electrode dielectric material. The first termination trench can be lined with a layer of dielectric material that is thicker than the dielectric material lining the sidewalls of the active trench, and is substantially filled with conductive material.

A method is disclosed for controlling single-phase DC / AC converters, along with a converter arrangement having at least two single-phase DC / AC converters. A controller is provided which can control the at least two single-phase DC / AC converters, and an isolation transformer, wherein outputs of the at least two single-phase DC / AC converters are cascade-connected with each other and an input of the isolation transformer. The controller is configured to control the at least two single-phase DC / AC converters to deliver power from their inputs to their outputs by turns.

The invention discloses an electronic control dimming medium which comprises two substrate layers. A mixed layer is arranged between two substrate layers and is made by mixing smectic phase liquid crystal and additives. A conductive electrode layer is arranged at the sides of two substrate layers towards the mixed layer, and the conductive electrode layer is connected with a circuit drive control apparatus. Two substrate layers can be made of glass, or two substrate layers can be made of plastic, or one substrate layer is made of the glass, and the other substrate layer is made of the plastic. When an electric signal which is applied to the conductive electrode layer is controlled, smectic phase liquid crystal molecules can be characterized by different arrangement states, and the arrangement states are the same in the electroless case, so as to ensure that the medium can be switched between a vaporific shielding state and a full transparent state and even can be switched among various gradual progress states of different gray scales. The electronic control dimming medium can be widely applied to the fields of building decoration and fitment, privacy control area, automobile electronics, electronic bulletin board, etc.

Provided is a variable resistive element which performs high speed and low power consumption operation. The variable resistive element comprises a metal oxide layer between first and second electrodes wherein electrical resistance between the first and second electrodes reversibly changes in accordance with application of electrical stress across the first and second electrodes. The metal oxide layer has a filament, which is a current path where the density of a current flowing between the first and second electrodes locally increases. A portion including at least the vicinity of an interface between the certain electrode, which is one or both of the first and second electrodes, and the filament, on an interface between the certain electrode and the metal oxide layer is provided with an interface oxide which is an oxide of at least one element included in the certain electrode and different from the oxide of the metal oxide layer.

The invention discloses a flexible switching system for a vehicle welding production line. The flexible switching system is used for solving the problems of low operating efficiency and poor universality in a current vehicle welding production line. The flexible switching system comprises a piece supplying mechanism, a transition track, a storage mechanism, a rotating platform, a trolley, a steering track switching mechanism and a lifting track switching mechanism, wherein the piece supplying mechanism and the rotating platform are arranged on two ends of the transition track, the storage mechanism is arranged on two sides of the transition track, the steering track switching mechanism is mounted in a joint position of the storage mechanism and the transition track, the lifting track switching mechanism is arranged on the transition track, and the trolley can move among the piece supplying mechanism, the storage mechanism and the rotating platform. According to the flexible switching system, an operating speed of a welding production line is improved, and synchronous operations of the piece supplying and the welding are realized. The flexible switching system is suitable for the mixing-line production of various vehicles, so that the cost on equipment development and operation is lowered, and the efficiency of welding production is improved.

The source / drain zones (140 and 142 or 160 and 162) of a p-channel IGFET (120 or 122) are provided with graded-junction characteristics to reduce junction capacitance, thereby increasing switching speed. Each source / drain zone contains a main portion (140M, 142M, 160M, or 162M) and a more lightly doped lower portion (140L, 142L, 160L, or 162L) underlying, and vertically continuous with, the main portion.

A relay gateway apparatus HO-GW is provided between heterogeneous access networks (a WiMAX access network and a UMB access network). The HO-GW performs conversion of a movement control signal (an Inter-AGW handover control signal) and relay of communication data. When the relay is performed, user data from a CN reaches a wireless terminal MN through an HA of a core network, an access router ASN-GW, the HO-GW, and a base station eBS.

A microelectromechanical system is disclosed that uses a stiff tether between an actuator assembly and a lever that is interconnected with an appropriate substrate such that a first end of the lever may move relative to the substrate, depending upon the direction of motion of the actuator assembly. Any appropriate load may be interconnected with the lever, including a mirror for any optical application.

The invention discloses a joint video monitoring method and a system thereof, belonging to the video monitoring field. The method comprises the following steps: a registration management server receives and stores position information of cameras sent by a monitoring front end, and sends the position information of the cameras to a monitoring terminal; the registration management server receives position information of a monitoring target sent by a navigation forwarder carried on the monitoring target and sends the position information of the monitoring target to the monitoring terminal; and the monitoring terminal selects proper cameras for monitoring according to the position information of the monitoring target and the position information of the cameras, and displays the monitoring video. The system comprises the registration management server, the monitoring terminal, the monitoring front end and the navigation forwarder carried on the monitoring target. The invention can easily control lenses of the cameras, automatically switch scenes during the whole monitoring process at high speed and low cost, and unite a plurality of cameras to jointly monitor the monitoring target.

PCT No. PCT / DE98 / 00945 Sec. 371 Date Jun. 30, 1999 Sec. 102(e) Date Jun. 30, 1999 PCT Filed Apr. 3, 1998 PCT Pub. No. WO99 / 15783 PCT Pub. Date Apr. 1, 1999A fuel injection device for internal combustion engines is proposed in which a fuel injection valve is controlled by the pressure in a pressure chamber, which acts on a pressure shoulder in its opening and closing direction. The pressure supply to the a pressure chamber is controlled by a control valve member which in turn is moved by a pressure in a working chamber. The pressure in the working chamber is controlled by a pre-control valve which has a closing body which, through the influence of the piezoelectric drive mechanism, is moved from a second valve seat to a first valve seat and thereby momentarily opens a relief line of the working chamber. This movement results in an opening of the control valve member and a supplying of high fuel pressure to the pressure chamber for purposes of injection. Thus a very small pre-injection quantity is produced. In order to produce a main injection quantity, the closing body is positioned in an intermediate position between the valve seats and a longer connection of the high-pressure fuel supply to the pressure chamber is consequently produced.

A computing system as described in which individual instructions are executable in parallel by processing pipelines, and instructions to be executed in parallel by different pipelines are supplied to the pipelines simultaneously. The system includes storage for storing an arbitrary number of the instructions to be executed. The instructions to be executed are tagged with pipeline identification tags indicative of the pipeline to which they should be dispatched. The pipeline identification tags are supplied to a system which controls a crossbar switch, enabling the tags to be used to control the switch and supply the appropriate instructions simultaneously to the differing pipelines.

This invention discloses a new switching device supported on a semiconductor that includes a drain disposed on a first surface and a source region disposed near a second surface of said semiconductor opposite the first surface. The switching device further includes an insulated gate electrode disposed on top of the second surface for controlling a source to drain current. The switching device further includes a source electrode interposed into the insulated gate electrode for substantially preventing a coupling of an electrical field between the gate electrode and an epitaxial region underneath the insulated gate electrode. The source electrode further covers and extends over the insulated gate for covering an area on the second surface of the semiconductor to contact the source region. The semiconductor substrate further includes an epitaxial layer disposed above and having a different dopant concentration than the drain region. The insulated gate electrode further includes an insulation layer for insulating the gate electrode from the source electrode wherein the insulation layer having a thickness depending on a Vgsmax rating of the vertical power device.

The present invention is to provide a semiconductor device including: a semiconductor layer that has a first-conductivity-type region, a second-conductivity-type region, a first-conductivity-type region, and a second-conductivity-type region that are adjacent to each other in that order; first and second electrodes that are connected to the first-conductivity-type region and the second-conductivity-type region, respectively, at both ends of the semiconductor layer; and a gate electrode that is coupled to the second-conductivity-type region or the first-conductivity-type region in an intermediate area of the semiconductor layer, the gate electrode being provided over a plurality of faces of a semiconductor layer portion serving as the second-conductivity-type region or the first-conductivity-type region in the intermediate area.

A color image forming apparatus produces a latent image on a photosensitive body based on a signal output from a scanning light detecting part in response to detection of scanning light; a semiconductor laser modulation signal generating part includes a clock generating part and a clock modulation part; a semiconductor laser and a semiconductor laser driving part are provided for each color of yellow, magenta, cyan and black; and further, a plurality of the semiconductor lasers are provided for at least one color of yellow, magenta, cyan and black.