67results about How to "Fast switching speed" patented technology

The invention provides a switching power supply and a driving circuit and a driving method thereof, the driving circuit comprises a level shift circuit, a pulse generation circuit, a high-side driving circuit and a low-side driving circuit, an output signal of the level shift circuit is used for adjusting the potential of a first node in the high-side driving circuit, and an output signal of the pulse generation circuit is used for adjusting the potential of a second node in the low-side driving circuit. The high-side driving circuit drives the high-side switch unit to be switched on after the potential of the first node reaches a switching-on trigger potential, and the high-side driving circuit drives the high-side switch unit to be switched on after detecting that the driving signal of the low-side switch unit is changed into an invalid state and the high-side control signal is changed into an effective state; an additional potential adjusting path is established for the first node, so that the time for the potential of the first node to reach the turn-on trigger potential is shortened, namely the dead zone time from turn-off of the low-side switch unit to turn-on of the high-side switch unit is shortened, the switching speed of the high-side switch unit is increased, the reduction of dead zone loss and switching loss is realized, and the switching efficiency is improved. And the working efficiency of the switching power supply is improved.

This invention discloses a contactless chip testing system. The platform includes a PC, a data parsing / forwarding module, a source signal excitation module, a gating array, and a chip slot under test. The platform allows for simultaneous multi-selection via a PC's visual interface, enabling automated integrated testing of resistance, capacitance, package integrity, voltage, and overall power consumption between any chip pins. Compared to traditional mechanical probe-based contact testing systems, this invention is more compact. Furthermore, it employs an automatically gating physical path switching method, resulting in a higher switching rate and more efficient package testing.

The application relates to a full GaN power electronic monolithic integrated circuit and a preparation method thereof, which comprises, from bottom to top, an insulating composite substrate, an AlN layer, a Si layer, a GaN / AlGaN buffer layer, a GaN layer and an AlGaN layer; a 2DEG layer is formed between the GaN layer and the AlGaN layer; the AlGaN layer is etched, a p-GaN layer is grown; a p-GaN layer gate portion is etched and filled with a passivation layer, and a gate metal is grown; source metal and drain metal are respectively grown on both sides of the p-GaN layer gate area; a deep groove is arranged between a driving circuit and a low-voltage tube, between a high-voltage tube and the low-voltage tube, and a medium is filled in the deep groove; and the full GaN power electronic monolithic integrated circuit is obtained through a top via and an interconnection process. The application can realize high efficiency and low power consumption, low parasitic effect, and reduce leakage current and switching loss.

The application relates to the technical field of heat exchange, and discloses a column-tube type heat exchanger for fluid heat exchange, which comprises a shell, the inside of the shell is uniformly distributed with inner mounting plates, the outside of the inner mounting plates is rotationally connected with outer mounting plates, the inside of the shell is provided with two inner end plates, the outside of the inner end plates is rotationally connected with outer end plates, the outside of one side of the outer end plates is fixedly connected with a ratchet wheel, the inside of the other side of the outer end plates is rotationally connected with a fixing frame, the upper end of a driving bin two is slidably connected with a sliding shaft, and the upper end of the sliding shaft is fixedly connected with a limiting block. Through the relative rotation of the outer mounting plates and the inner mounting plates, the window area and the flow position of the clear water flow channel formed between the outer mounting plates and the inner mounting plates continuously and dynamically change, the clear water in the shell is forced to continuously change the flow direction, the clear water is prevented from long-term flowing through the local heat exchange area along the fixed flow channel, the outer surfaces of all the heat exchange tubes can be fully contacted with the low-temperature clear water, and balanced and deep heat exchange of the whole tube area is realized.

The utility model relates to electrical measurement and automation test technical field, concretely relates to a kind of AC-DC withstand voltage insulation tester, it includes: main control unit, for executing test program and controlling each module coordinated work;High voltage output module, for generating the AC / DC high voltage required by test;Precise current detection module, for detecting the leakage current of measured piece;Multi-channel test interface, for connecting multiple measured equipment;Automatic switching unit, for automatically switching test channel;Data storage module, for automatically recording test data;Man-machine interface, for displaying test information and receiving operation instruction.The utility model is jointly constituted by innovative design an advanced test system with automation, high precision, high efficiency, intelligent management in one, realizes qualitative leap in test quality, operation convenience, production efficiency and safety etc., fully meets the rigorous requirement of modern industry to electrical safety test equipment.

The application provides a variable driving parameter silicon carbide MOSFET active driving method, circuit and device. The active driving method comprises: in the on process, a power supply is controlled to apply a first weak driving level in a first time period and a first strong driving level in other time periods, the starting time of the first time period is the time when the silicon carbide MOSFET enters the Miller platform, and the ending time is the time when the drain current reaches the current overshoot peak value; in the judgment process, the power supply is controlled to apply a second weak driving level in a third time period and a second strong driving level in other time periods, the starting time of the third time period is the time when the drain-source voltage is equal to the DC bus voltage, and the ending time is the time when the drain-source voltage reaches the voltage overshoot peak value. The method has good versatility and high engineering application value, reduces the additional switching loss caused by weak driving, maintains high switching speed while ensuring the overshoot suppression effect, and thus realizes a better compromise between overshoot, loss and switching time.

The invention discloses a floating interactive intelligent display chip based on dynamic distance sensing and a preparation process, and relates to the field of integrated chip preparation, the floating interactive intelligent display chip comprises a substrate layer, a buffer layer, an intrinsic layer, a multi-quantum well layer, a barrier layer, a source electrode, a grid electrode, a p-GaN layer, an anode and a drain electrode, the buffer layer, the intrinsic layer, the multi-quantum well layer and the barrier layer are sequentially arranged on the substrate layer, and the source electrode, the grid electrode, the p-GaN layer, the anode and the drain electrode are sequentially arranged on the substrate layer. The source electrode is arranged on one side of the upper surface of the barrier layer, the grid electrode is arranged in the middle of the upper surface of the barrier layer, the p-GaN layer is arranged on the other side of the upper surface of the barrier layer, and the anode and the drain electrode are sequentially arranged above the p-GaN layer. An InGaN / GaN multi-quantum well structure is embedded into a p-GaN HEMT epitaxial layer structure to form a light-emitting HEMT structure, and a driving transistor, a light source and a photoelectric detector are subjected to monolithic integration, so that a floating interactive intelligent display chip with an epitaxial integrated structural characteristic is realized.

The application discloses a high-precision quick-switching continuous sandwich plate production line, which comprises a lower plate uncoiling and profiling system, an upper plate uncoiling and profiling system, an upper steel plate transition roller way, a double-track pressure curing machine, a lower roller way, a tracking cutting saw, a cooling bed, a stacking machine, a packing machine, a first mineral wool supply system and a second mineral wool supply system, and the core of the application is that the lower plate uncoiling and profiling system and the upper plate uncoiling and profiling system are installed by exchanging positions, the lower plate uncoiling and profiling system is arranged at the front end of the upper plate uncoiling and profiling system, and part of the upper steel plate transition roller way and the lower profiling machine transverse moving system are cancelled, so that the lower plate uncoiling and profiling system is not interfered by the upper steel plate transition roller way, the plate type can be directly switched by using a crown block to hoist and switch the roller frame assembly of the lower profiling machine, the step of moving the lower profiling machine out of the line to switch the specifications is omitted, the investment cost of the production line is greatly reduced, the use area of the workshop is saved, and the switching of the specifications is more accurate and quick.

The invention discloses a high electron mobility transistor chip and a preparation method thereof, and belongs to the technical field of semiconductors. The high electron mobility transistor chip comprises a substrate, and an alternating polarization layer, a first buffer layer, a second buffer layer, a channel layer, a barrier layer, a super junction layer and a cap layer which are sequentially stacked on the substrate, the alternate polarization layer comprises GaN layers and AlGaN layers which are periodically and alternately stacked to form a superlattice structure; the first buffer layer is a GaN layer; the second buffer layer is a C-doped GaN layer, and the C doping concentration of the second buffer layer is gradually increased along the epitaxial growth direction. According to the embodiment of the invention, the structure process can be effectively simplified, and the preparation cost is reduced.

The utility model discloses a winch clutch mechanism with remote control function, including clutch handle seat, the bottom of clutch handle seat is equipped with the clutch base of screw connection with it, the clutch base is inserted with the clutch pin shaft, is equipped with the plug -in of synchronous up and down movement with it on the clutch pin shaft, the elastic member is installed to the outer layer cover of clutch pin shaft, and the elastic member is located between clutch pin shaft and clutch base, the pull rod is installed on the plug -in, is equipped with the pusher of perpendicular setting with clutch pin shaft in clutch handle seat, and the pusher includes push rod body, is equipped with the guide portion on the push rod body, and the pull rod is attached with the guide portion setting, and the pull rod drives the telescopic clutch pin shaft relative clutch base when push rod body telescopic of pusher control is driven the pull rod relative guide portion moves, and the pull rod drives the telescopic clutch pin shaft to draw, thereby the working condition of convenient control automatic control clutch.

The utility model discloses a kind of optical filter switching mechanism and camera module, it is related to optical imaging field, wherein, optical filter switching mechanism includes: upper cover;Lower cover is connected with upper cover buckle, lower cover is equipped with the installation slot being communicated with containing cavity, upper cover and lower cover are all set up the window being communicated with containing cavity, and two windows are oppositely arranged;Shading piece sets up first port and second port, and shading piece is pasted with first optical filter opposite with first port and second optical filter opposite with second port, one end of shading piece is equipped with connecting hole;Driving mechanism is located in installation slot, driving mechanism includes connecting frame and power component, power component is connected with connecting frame and drives connecting frame reciprocating rotation, one end of connecting frame is equipped with connecting rod, connecting rod is inserted into connecting hole to drive shading piece to slide in containing cavity, and switch first optical filter and second optical filter cover window to pass through light.The optical filter switching mechanism structure simple that the utility model technical scheme proposes can quickly switch optical filter.

This invention relates to a high-precision visual inspection device for pet food production lines, belonging to the field of pet food inspection technology. It includes a main body with a conveyor belt installed inside. A first inspection component is located at the upper end of the conveyor belt, used for preliminary inspection of stains and damaged areas on the material surface. A centering and rejection component is located on one side of the first inspection component, used for centering and rejecting unqualified materials during the conveying process. A first damage detection component is located inside the centering and rejection component, used for initial verification of damaged materials detected by the first inspection component. This invention significantly reduces the rate of missed and false detections through a tiered inspection mode of initial inspection with an industrial camera, initial verification with heating thermal imaging, and secondary verification with airflow temperature difference.

This invention relates to a MOSFET with a trench gate structure on a GaN substrate and a method for fabricating the same, comprising: fabricating a GaN epitaxial layer on a GaN substrate; selectively etching the GaN epitaxial layer to form a trench structure; depositing a first insulating dielectric layer; growing a first metal gate on the first insulating dielectric layer in the trench structure; growing a second insulating dielectric layer on the first metal gate; selectively etching away the second insulating dielectric layer except for the area above the first metal gate and the area of ​​the first insulating dielectric layer except for the area around the first metal gate; depositing silicon dioxide to simultaneously form a sidewall structure on the inner wall of the trench structure, an isolation dielectric layer on the second insulating dielectric layer, and a surface preparation layer of the GaN epitaxial layers on both sides of the trench structure; growing a second metal gate on the isolation dielectric layer; ion implantation on the GaN epitaxial layers on both sides of the trench structure to form source and drain regions, and fabricating contact electrodes and gate electrodes; and fabricating a surface passivation layer, with the contact electrodes and gate electrodes exposed on the surface passivation layer.

A method of fabricating an electrically-controlled birefringence cell. The cell has a cell gap no more than 20 micrometers. The cell has an alignment layer arranged to impart a pretilt on liquid crystal in contact with the alignment layer. The method comprises processing the alignment layer to achieve a surface anchoring value between the liquid crystal and alignment layer of less than 1 mJ / m2.

The embodiment of the invention provides a configuration picture configuration method and device for an energy management system, and the method comprises the steps: recognizing a logic picture related to a control after a user clicks the control of an interface, and determining a template picture related to the logic picture; under the condition that the target template picture is loaded in the memory, determining a data point and / or a grouping mark bound with a template control in the template picture; obtaining a first binding relationship between a first grouping mark in the logic picture and the energy storage equipment, and obtaining a second binding relationship between a second grouping mark in the logic picture and the to-be-displayed text; on the basis of the first binding relation, replacing parameters of the first template control with corresponding parameters of the energy storage device at the data point, and on the basis of the second binding relation, replacing parameters of the second template control with the displayed text; and performing rendering display on the picture instance after parameter replacement on an operation interface to complete configuration of the configuration picture.

The utility model discloses a kind of multi-path polarized switching devices of linear polarized laser, including several polaroids, first polaroid is set on linear polarized laser shooting into optical path, 1 / 2 wave plate that can cut into, cut out optical path is set on the incident light path of each polaroid, 1 / 4 wave plate is set on each polaroid transmission light path, the reflection light path of polaroid is as output light path, 1 / 4 wave plate is set on output light path;Polaroid quantity is set to 2 or more, the last polaroid is set on the reflection light optical path of the first polaroid, the reflection light path of the last polaroid on reflection light path is set 1 / 4 wave plate.The utility model's linear polarized light multi-path polarized switching, in laser application, it is favorable to obtain high efficiency, low cost use.Relative to galvanometer switching has low cost, small noise, switching speed is fast, stable and reliable, suitable for airborne and other harsh environment and the like advantages.

The application provides a MOSFET / IGBT negative feedback active gate drive circuit, which comprises a low-voltage side drive chip, a turn-on voltage feedback regulation loop, an off voltage feedback regulation loop and a high-voltage side switching speed detection loop; the input ends of the turn-on voltage feedback regulation loop and the off voltage feedback regulation loop are connected with a node E in the switching speed detection loop, and the output ends of the turn-on voltage feedback regulation loop and the off voltage feedback regulation loop are respectively connected with a positive voltage power supply end VCC and a negative voltage power supply end VEE or a ground end GND of the drive chip. The application can effectively inhibit overshoot and oscillation in the switching process of the device, and increase the safety of the device; compared with the traditional gate drive, the method has faster switching speed and smaller loss under the same overshoot; the application realizes self-adaptive adjustment of the switching speed by constructing a feedback circuit, and has faster response.

The present application belongs to the technical field of power semiconductor devices, and relates to a self-bias split gate bipolar transistor and a manufacturing method thereof. The present application provides a bias potential for the split gate (11) through the potential of the floating P region (18), thereby forming the electron accumulation ability below the trench, enhancing the conductance modulation ability, and thus enhancing the forward conduction ability of the device. Compared with the traditional split gate structure, the diode and capacitor structure of the self-bias structure are integrated into the IGBT structure, which can simultaneously improve the conduction ability and switching performance of the device without affecting the device size and IGBT operation, eliminates the negative effects brought by the split gate, improves the switching loss and enhances the switching speed, optimizes the forward conduction ability of the device, and improves the compromise characteristics between the forward conduction voltage drop and the off-state loss of the device.

This invention discloses a rapid olfactory material switching device for home olfactory devices, comprising a support device, a fragrance bottle, a spring, a baffle, and a cantilevered buckle. The support device supports the fragrance bottle; one end of the spring is connected to the support device, and the other end is connected to the internal connection of the olfactory device; the baffle is located on the outside of the support device and on the same side as the spring, and is fixed to the outer wall of the olfactory device; the cantilevered buckle is fixed to the support device and can be locked onto the olfactory device. This invention allows for easy and quick fragrance bottle replacement in just three steps: pressing the cantilevered buckle, replacing the fragrance bottle, and pushing the fragrance bottle in.

The utility model relates to the technical field of heat exchangers, and discloses a double-shell heat exchanger which comprises shells, a heat medium inlet pipe is fixedly connected to the upper surface of each shell, a heat medium outlet pipe is fixedly connected to the lower surface of each shell, and a first inlet pipe is fixedly connected to the position, located on the left side of the heat medium inlet pipe, of the upper surface of each shell. A first outlet pipe is fixedly connected to the position, located on the right side of the heat medium inlet pipe, of the upper surface of the shell, a second inlet pipe is fixedly connected to the position, located on the left side of the heat medium outlet pipe, of the lower surface of the shell, a second outlet pipe is fixedly connected to the position, located on the right side of the heat medium outlet pipe, of the lower surface of the shell, and a heat exchange mechanism is arranged in the shell. Impurities in a heat medium are filtered through the filter plates in the filter mechanism, the motor drives the threaded rod to rotate, the filter plate originally located in the filter pipe is driven to move out of the filter pipe, and the filter plate originally located outside the filter pipe is driven to move into the filter pipe, so that switching use of the two filter plates is achieved; the blockage caused by long-time use of the same filter plate is avoided, and long-time shutdown and waiting are not needed.

The application discloses a high-voltage diode, which comprises a cathode, an N-type semiconductor substrate, an N-type semiconductor drift layer, a first oxidation part, a first P-type doped part, a second P-type doped part, a second oxidation part and an anode. The N-type semiconductor substrate is arranged on the cathode. The N-type semiconductor drift layer is arranged on the side of the N-type semiconductor substrate far from the cathode. The first oxidation part is located in the N-type semiconductor substrate and extends into part of the N-type semiconductor drift layer. The first P-type doped part is arranged in the N-type semiconductor drift layer and connected with the first oxidation part. The second P-type doped part is arranged on the side of the N-type semiconductor drift layer far from the cathode. The second oxidation part is located in the second P-type doped part and extends into part of the N-type semiconductor drift layer. The anode is arranged on the side of the second P-type doped part far from the cathode. In the application, the risk of electromagnetic interference (EMI) noise generation can be reduced by introducing the first P-type doped part.

The application provides a fast charging circuit of an energy storage device and a charging method and a charger thereof, wherein the charging circuit comprises a forward conversion module, the forward conversion module outputs a first stable current or a second stable current to the energy storage device through a transformer; an energy storage capacitor is electrically connected to an output power supply of the forward conversion module, and the energy storage capacitor is electrically connected to the energy storage device through a control switch; when the output of the charging circuit is switched from the first stable current to the second stable current, the control switch is closed, the energy storage capacitor charges the energy storage device, so as to accelerate the switching process from the first stable current to the second stable current; the energy storage capacitor is electrically connected to an output port of the transformer, the output port of the transformer is allowed to be switched, so as to maintain the voltage of the energy storage capacitor at a preset voltage. The application can generate continuous current and high-quality pulse current, and the charging efficiency is high.

The application discloses a threshold value adjustable vertical double diffusion metal oxide semiconductor field effect transistor, which comprises a drift region, a body region formed in the drift region from the upper surface of the drift region downwards, a gate oxide layer formed on the upper surfaces of the drift region and the body region, and a PN junction composite polysilicon gate formed on the upper surface of the gate oxide layer and composed of a first type polysilicon and a second type polysilicon, wherein the second type polysilicon covers all surfaces of the first type polysilicon except the bottom, and the vertical projection of the PN junction junction boundary formed by the first type polysilicon and the second type polysilicon is located in the body region in the channel region. When the transistor is turned on, the PN junction composite polysilicon gate is in a reverse bias state, and the threshold voltage is raised by affecting the inversion process of the body region through the junction electric field. The application realizes the raising of the threshold voltage of the device without weakening other performances of the device, and does not change the core gate oxide process and need to cooperate with a groove structure.

The invention discloses a search, rescue, monitoring and sightseeing integrated method and system for a water-land-air three-purpose motorcycle and the motorcycle, and belongs to the technical field of special vehicles. The motorcycle comprises a motorcycle body, a power system, a scene switching mechanism, a function integration module and a control system. A foldable floating body is arranged at the bottom of the vehicle body, telescopic rotors are arranged on the two sides of the vehicle body, and a switchable propelling device is arranged at the tail. The power system adopts a hybrid design to adapt to power requirements of different scenes; the scene switching mechanism realizes quick switching of three scenes of water, land and air; the function integration module integrates three core functions of search and rescue, environment monitoring and sightseeing. And the control system realizes whole-process cooperative control. The system comprises the motorcycle, a terminal control device and a cloud server, and realizes data interaction and remote scheduling. According to the method, a multi-scene task is completed through five steps of scene selection, switching, function starting, real-time regulation and control and task ending. The problems that an existing device is single in function and inconvenient in scene switching are solved, integration of multiple functions of the single device is achieved, scene adaptability and task efficiency are improved, and the device is suitable for water search and rescue, environment monitoring and sightseeing tourism scenes.

The invention relates to the technical field of chemical production power supply safety, in particular to a chemical multi-loop guarantee power supply method and system. According to the method, a three-level power supply architecture in which a main power supply is configured to be a double-circuit mains supply, a first-level standby power supply is a UPS power supply and a second-level standby power supply is a diesel generator is adopted, and a PLC is utilized to monitor the voltage, frequency and harmonic distortion rate of the main power supply in real time; when the main power supply fails, the main power supply is switched to UPS power supply within 10-30 ms; when the energy storage of the UPS is insufficient, the diesel generator is started in advance, and load transfer is completed within 30-60 ms; and after the main power supply is recovered, the load is switched back according to the principle of connection-before-disconnection. According to the invention, millisecond-level seamless power supply switching is realized, the continuity and reliability of power supply of chemical key equipment are remarkably improved, the risk of unplanned shutdown and the probability of safety accidents are effectively reduced, and the operation economy is optimized through intelligent management.

This application provides a charging control circuit, a charging system, and an electric vehicle. The charging control circuit consists of an analog circuit, including: a reverse protection module that receives and unidirectionally transmits a charger signal input from the charger signal input terminal; a signal conditioning module that receives the charger signal output from the reverse protection module and conditions it into a charging control drive signal, wherein the voltage of the charging control drive signal is lower than that of the charger signal; a charging control drive module that receives the charging control drive signal output from the signal conditioning module and conditions it into a charging control signal; and a charging control module including at least one switching device connected to the charger negative terminal and the battery negative terminal, the state of which is controlled by the charging control signal. The technical solution provided by this application reduces the risk of electric shock to users and improves the safety of the electric vehicle charging system while ensuring battery charging efficiency.

This utility model discloses a quick-release fixture for an indenter, comprising: a main board with an open slot, a sliding groove communicating with the open slot, and guide rails corresponding to the open slot and the sliding groove, wherein the indenter can extend into the open slot and move along the guide rail within the sliding groove; a fixing mechanism connected to opposite sides of the main board for a detachable connection between the main board and the object to be tested; a positioning block that can move along the guide rail within the sliding groove, and is locked and unlocked by a locking mechanism; the locking mechanism unlocks the positioning block, allowing it to move along the guide rail to the target position in the sliding groove; the locking mechanism then locks the positioning block, allowing it to remain at the target position in the sliding groove; the indenter moves along the guide rail within the sliding groove until it abuts against the positioning block, thus achieving indentation point positioning by the indenter. The fixing mechanism of this utility model fixes the quick-release fixture to the metal surface to be tested, moves the positioning block to the target position, locks it with the locking mechanism, inserts it into the indenter, and completes the test, resulting in high testing efficiency and accurate data.

The utility model discloses a kind of NAVTEX four-line audio circuit switching systems based on single-chip microcontroller control, comprising: instruction terminal, serial control module, single-chip microcontroller control module, state storage module, control signal monitoring module, line switching module, NAVTEX signal input module, NAVTEX signal output module, first / second signal monitoring module;Main instruction terminal is electrically connected with serial control module, serial control module is electrically connected with single-chip microcontroller control module, single-chip microcontroller control module is electrically connected with button control module, display module, state storage module, control signal monitoring module, line switching module, line switching module is electrically connected with NAVTEX signal input module, NAVTEX signal output module, NAVTEX signal input and output module are electrically connected with first signal monitoring module and second signal monitoring module respectively;The utility model can be used for maritime NAVTEX system audio signal line automatic switching, remote control line switching, signal transmission quality monitoring, line connection state storage and inquiry.

The utility model provides a fluorescence switching device for medical imaging equipment, which comprises a motor and a turntable body, the turntable body comprises a top plate, the motor is connected with the top plate, and a plurality of light filtering components are arranged in the circumferential direction of the top plate; the light filtering assembly comprises an excitation light filter support and a dichroscope support connected with the excitation light filter support, an excitation light filter is arranged on the excitation light filter support, a dichroscope is arranged on the dichroscope support, and the excitation light filter support is fixedly connected with the edge of the top plate; the excitation optical filter is located on one side of the dichroscope in the horizontal direction, and a reflection optical filter is arranged on the top plate. The structure of the light filtering assembly is greatly simplified, the size and the structural complexity of the light filtering assembly are greatly reduced, the weight of the light filtering assembly is effectively reduced, more light filtering modules can be installed on one rotary table body, and more than ten light filtering assemblies can be installed on one rotary table body at the same time. And the switching requirement of a large number of light filtering assemblies can be effectively met.

The utility model relates to a kind of power transistor.The utility model includes first conductive type substrate;Back metal layer, setting in the back of first conductive type substrate;Second conductive type base area, forms in the front of part first conductive type substrate;First conductive type emission area, forms in the front of part second conductive type base area;First conductive type resistance ring, forms in the front of part first conductive type substrate;Insulating dielectric layer, covers the front of first conductive type substrate;Surface protection barrier layer, covers the front of insulating dielectric layer;Passivation layer, covers the front of surface protection barrier layer;Base area metal layer, setting in the front of passivation layer, and first opening and the front of second conductive type base area contact;Emission area metal layer, setting in the front of passivation layer and mutually isolated with base area metal layer, emission area metal layer is contacted in the front of first conductive type emission area by second opening.Effective improvement device overall performance can be carried out.