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711 results about "Equivalent series resistance" patented technology

Practical capacitors and inductors as used in electric circuits are not ideal components with only capacitance or inductance. However, they can be treated, to a very good degree of approximation, as being ideal capacitors and inductors in series with a resistance; this resistance is defined as the equivalent series resistance (ESR). If not otherwise specified, the ESR is always an AC resistance, which means it is measured at specified frequencies, 100 kHz for switched-mode power supply components, 120 Hz for linear power-supply components, and at its self-resonant frequency for general-application components. Additionally, audio components may report a "Q factor", incorporating ESR among other things, at 1000 Hz.

Power semiconductor devices and methods of manufacture

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.
Owner:SEMICON COMPONENTS IND LLC

Power semiconductor devices and methods of manufacture

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.
Owner:SEMICON COMPONENTS IND LLC

Power semiconductor devices and methods of manufacture

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.
Owner:SEMICON COMPONENTS IND LLC

Power semiconductor devices and methods of manufacture

Various embodiments for improved power devices as well as their methods of manufacture, packaging and circuitry incorporating the same for use in a wide variety of power electronic applications are disclosed. One aspect of the invention combines a number of charge balancing techniques and other techniques for reducing parasitic capacitance to arrive at different embodiments for power devices with improved voltage performance, higher switching speed, and lower on-resistance. Another aspect of the invention provides improved termination structures for low, medium and high voltage devices. Improved methods of fabrication for power devices are provided according to other aspects of the invention. Improvements to specific processing steps, such as formation of trenches, formation of dielectric layers inside trenches, formation of mesa structures and processes for reducing substrate thickness, among others, are presented. According to another aspect of the invention, charge balanced power devices incorporate temperature and current sensing elements such as diodes on the same die. Other aspects of the invention improve equivalent series resistance (ESR) for power devices, incorporate additional circuitry on the same chip as the power device and provide improvements to the packaging of charge balanced power devices.
Owner:SEMICON COMPONENTS IND LLC

Broad output current scope low pressure difference linear manostat

A low dropout linear voltage regulator with wide output current range and low pressure difference, comprises an error amplifier in the folding common source and common gate structure, a buffer circuit, a driving element, a feedback circuit, a load capacitance equivalent series resistance compensating circuit and a multistage Miller compensation circuit, wherein the buffer circuit changes the low frequency pole into a medium frequency pole and a high frequency pole; the large load capacitance of the load capacitance equivalent series resistance compensating circuit pushes the main pole to the low frequency, causing the gain crossover point to push inwards, and generating a medium frequency zero point for counteracting the medium frequency pole connected serially with the equivalent series resistance; the stride multilevel Miller compensation circuit generates a medium high frequency pole and a medium high frequency zero point slightly smaller than the medium high frequency pole for advancing the phase margin, thereby not only adding the unity gain bandwidth, but also saving considerable chip area. When the output current has a large change range, the structure provided by the invention generates wider unity gain bandwidth, provides the phase margin of greater than 85 degrees, ensures the stability of the system and advances the low pressure difference linear voltage stabilization performance.
Owner:WUHAN UNIV
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