7827 results about "Passivation" patented technology

The invention discloses a semiconductor structure manufacturing method and a semiconductor structure, and the manufacturing method comprises the steps: carrying out the periodic cycle etching of a preset number of times on a substrate through employing an etching technology, forming a first intermediate structure on the substrate, and carrying out the first processing of the first intermediate structure, including employing a first gas and a second gas, removing a part of thickness of the passivation layer deposited on the side wall of the first intermediate structure, and reacting with the substrate material which exists on the side wall and is exposed on the surface of the convex part to generate a reaction product layer; and removing the reaction product layer by using a third gas and a fourth gas so as to remove at least part of the lug boss, and repeatedly executing the etching process and the first processing process until a high aspect ratio etching structure is formed on the substrate. According to the method, the etching process and the side wall processing technology are organically combined, the etching rate and the side wall quality are balanced through alternate circulation, and deep silicon etching with the higher aspect ratio and the smaller nanoscale size can be achieved.

The present invention discloses a self-assembled monolayer hole transport material based on an alkyl polyphosphate anchoring group, a synthesis method thereof, and an application in an inverted perovskite solar cell. The present invention uses carbazole or 3,6-diphenylcarbazole with good hole transport properties as a parent core, and achieves complete coverage and stable self-assembly of the material on the substrate surface by improving the anchoring group from traditional alkyl monophosphate to alkyl diphosphate and triphosphate. The synthesis method of the present invention is simple and the synthesis cost is low. The prepared material can achieve the dual functions of hole transport and perovskite interface passivation, while enhancing the self-assembly strength and stability. When the material is used as a hole transport layer in an inverted perovskite solar cell, a photoelectric conversion efficiency of >20% can be obtained without doping, and the material has broad application prospects.

The invention provides a solar cell, which comprises a silicon substrate having a backlight surface and a light facing surface which are opposite, the backlight surface comprises first areas and second areas which are alternately arranged, the first areas of the backlight surface are provided with first pyramid structures, the light facing surface is provided with second pyramid structures, the first pyramid structures are provided with first passivation contact layers, and the second pyramid structures are provided with second passivation contact layers; the first pyramid structure is provided with a first passivation contact layer, the reflectivity of the first area is 5%-14%, the second pyramid structure is provided with a passivation antireflection layer, the reflectivity of the light facing face is 5%-14%, the second area is provided with a second passivation contact layer, the reflectivity of the second area is 25%-50%, and the ratio of the area of the first area to the total area of the backlight face is 40%-70%. The light trapping effect of the light-facing surface is further improved by setting different shapes in different areas of the light-facing surface and the backlight surface, and the passivation effect and the carrier transport effect of the surface of the back pyramid structure are balanced while the light trapping effect of the backlight surface is improved; the photoelectric conversion efficiency and the double-sided rate of the solar cell are improved; and the appearance color difference of the receiving surface is improved.

The invention provides a solar cell and a photovoltaic module, and relates to the technical field of photovoltaics. The solar cell includes a first surface and a second surface opposite to each other in a thickness direction thereof, and a side surface connecting the first surface and the second surface, the side surface including a cut surface and a non-cut surface; an inorganic passivation layer formed on the cutting surface; at least part of the inorganic passivation layer contains carbon elements. In the invention, on one hand, the inorganic passivation layer on the cutting surface is not easy to damage, and a good passivation effect of the inorganic passivation layer is maintained; and on the other hand, the inorganic passivation layer is easier to bond and chain with silicon and the like on the cutting surface, and the binding force with the cutting surface is better.

Described herein are variations of an analyte monitoring system, including an analyte monitoring device. For example, an analyte monitoring device may include a skin-penetrating microneedle array for use in measuring analyte, such as in a continuous manner. The microneedle array may include, for example, at least one microneedle comprising a working electrode comprising an analyte-sensing aptamer that selectively and reversibly binds to analyte. The working electrode comprises at least one thiol-based passivation molecule that provides protection of the working electrode from, by way of example, foulants and interferents. For example, a sensor may be configured to generate a signal that is indicative of a concentration of an analyte in a fluid, the sensor comprising a working electrode comprising an electrode material, a biorecognition layer disposed at least partially on the electrode material and comprising a biorecognition element that selectively and reversibly binds to an analyte, and an at least partially desiccated hydrogel disposed on the biorecognition layer. For example, a working electrode may be configured to generate a signal indicative of a concentration of an analyte in a fluid, the working electrode comprising an electrode material, a biorecognition element disposed on the electrode material that selectively binds to the analyte, wherein the biorecognition element is functionalized with a redox-active molecule and is configured to change conformation upon binding the analyte to move the redox-active molecule, closer to, or further from, the electrode material, and a passivation element comprising a zwitterionic peptide disposed on the electrode material.

The invention discloses a solar cell and a manufacturing method thereof, and a photovoltaic module, and relates to the field of photovoltaic technology. The solar cell includes: a semiconductor substrate having a first surface including a first region and a second region; the second area comprises an edge area and a middle area, each of the edge area and the middle area comprises a step structure recessed towards the second surface, and the step depth of the step structure of the edge area of the second area is larger than that of the step structure of the middle area of the second area; and the first doping layer is arranged on the first region, and the height of the bottom wall of the step structure in the middle region of the second region is lower than that of the first doping layer. The first passivation layer is arranged on the side, away from the semiconductor substrate, of the first doping layer and arranged on the second area. According to the embodiment of the invention, the thickness along the splitting direction is reduced, so that the splitting difficulty is reduced, meanwhile, the recombination of current carriers is reduced, and the passivation effect is improved.

The invention provides a solar cell and a preparation method thereof, and a photovoltaic module, the rear surface of a semiconductor substrate is provided with a first region and a second region which are adjacent to each other, and the first region is provided with a first sub-region and first overlapping regions located at the two sides of the first sub-region; the first overlapping area is provided with a tunneling layer, a first doped conductive layer, a passivation layer, a second doped conductive layer and a first transparent conductive layer, the length of the first overlapping area in the first direction is D1, and the first direction is parallel to the surface where the semiconductor substrate is located; the rear surface of the semiconductor substrate is also provided with a third region and a fourth region which are adjacently arranged, and the third region is provided with a third sub-region and third overlapping regions located at the two sides of the third sub-region; the third overlapping region is provided with a tunneling layer, a first doped conductive layer, a passivation layer, a second doped conductive layer and a first transparent conductive layer, the length of the third overlapping region in the first direction is D2, and D1 is different from D2.

The invention discloses a solar cell and a manufacturing method thereof, and a photovoltaic module, and relates to the field of photovoltaic technology. The solar cell includes: a semiconductor substrate having a first surface including a first region and a second region adjacent to a first cut side; the second region comprises a step structure, an included angle is formed between the side wall of the step structure and the thickness direction of the semiconductor substrate, the first region is provided with a first pyramid structure, and the bottom wall of the step structure is provided with a first texture structure or a second pyramid structure; the first doping layer is arranged on the first region, and the height of the bottom wall of the step structure is lower than that of the first doping layer; the first passivation layer is arranged on one side, deviating from the semiconductor substrate, of the first doping layer and is arranged on the second region; the second passivation layer is arranged on the edge, close to the second area, of the first area, part of the second area and the first cutting side face. The passivation effect near the cutting side face is improved, carrier recombination is reduced, and the photoelectric conversion efficiency is improved.

The invention discloses a preparation method of a semiconductor structure and the semiconductor structure, and the preparation method comprises the steps: carrying out the etching of a substrate through employing an etching technology, so as to form a high-aspect-ratio etching structure on the substrate; after a periodic cycle step of a preset number of times of etching process is completed every time, a treatment process different from the etching process is used, and partial thickness of a passivation layer deposited on the side wall of an intermediate structure formed before the high aspect ratio etching structure is formed is removed. And removing at least part of the protruding part which exists on the side wall and is exposed from the surface of the residual passivation layer. According to the method, the etching process and the side wall processing technology are organically combined, the etching rate and the side wall quality are balanced through alternate circulation, and deep silicon etching with the higher aspect ratio and the smaller nanoscale size can be achieved.

The embodiment of the invention provides a solar cell and a preparation method thereof, and a photovoltaic module. In the embodiment of the invention, a first internal expansion layer with the same conduction type as a first doping layer and / or a second internal expansion layer with the same conduction type as a second doping layer are / is arranged in an interval region used for forming an isolation region on the back surface of a silicon substrate; and the first internal expansion layer and the second internal expansion layer are electrically connected, so that the field passivation effect can be realized, the recombination of minority carriers in the isolation region can be effectively reduced, reverse conduction can be realized when the battery piece is shielded, the breakdown can be avoided, and the hot spot prevention effect can be effectively realized.

Process condition management facilitates the combination of dry development and post-development treatment into a single process chamber; eliminating the necessity for a post-dry development bake step in a separate chamber during semiconductor manufacturing. Thermal dry development and plasma dry development may be performed in the same chamber. Thermal dry development, plasma dry development and passivation such as an O2 flash treatment; or thermal dry development, plasma dry development, passivation and hardening operations are enabled without wafer transfer.

Provided are a solar cell, a method for preparing a solar cell, and a photovoltaic module, relating to the field of photovoltaics. The solar cell includes a substrate, a dielectric layer and a doped semiconductor layer which are stacked, a passivation layer, and electrodes. The substrate has a first surface. The first surface includes an edge region and a center region. The edge region surrounds the center region. The edge region is substantially flush with or closer to the second surface than the center region. The dielectric layer is formed over the center region. The passivation layer covers the edge region and a surface of the doped semiconductor layer facing away the dielectric layer. The electrodes are located in the center region, and penetrate the passivation layer in a thickness direction to be in electrical contact with the doped semiconductor layer.

The invention discloses a solar cell and a preparation method thereof. The solar cell comprises a semiconductor substrate, the semiconductor substrate is provided with a light receiving surface and a backlight surface which are oppositely arranged, and the backlight surface of the semiconductor substrate is provided with a first area and a second area; a tunneling dielectric layer and a first doping layer, wherein the tunneling dielectric layer and the first doping layer are sequentially stacked on the first region; the intrinsic passivation layer and the second doping layer are sequentially arranged on the second area in a stacked mode, the intrinsic passivation layer is made of intrinsic silicon, and the doping type of the second doping layer is opposite to that of the first doping layer; and the oxidation isolation layer is arranged between the first doping layer and the second doping layer and is used for isolating the first doping layer from the second doping layer in an insulating manner. The problem of electric leakage can be improved.

The invention relates to the field of photovoltaic technology, in particular to a solar cell, a photovoltaic module and a preparation method of the solar cell, the solar cell comprises a substrate, the substrate comprises a first surface and a second surface, the first surface comprises a first area and a second area, and the second surface comprises a third area and a fourth area, the first diffusion layer is located on the first area or located in the substrate corresponding to the first area, the first diffusion layer is opposite to the substrate in conductive type, the second diffusion layer is located in the substrate corresponding to the third area, the second diffusion layer is opposite to the first diffusion layer in conductive type, and the first passivation layer is located on the third area and the fourth area. The first passivation layer covers the second diffusion layer and is in contact with the substrate, the first electrode electrically connected with the first diffusion layer is arranged on the first area, the second electrode electrically connected with the second diffusion layer is arranged on the third area, and the open-circuit voltage and the short-circuit current of the solar cell are improved through the design, and the photoelectric conversion efficiency is improved.

The present application relates to a solar cell, a method for manufacturing the same, a photovoltaic module and a photovoltaic system. The solar cell includes: a substrate (110), including a first surface (S1) and a second surface (S2) being opposite to each other, wherein the first surface (S1) has a first region (A) and a second region (B) adjacent to each other in a first direction; a passivating contact layer (120), located in the first region (A) of the first surface (S1); a polysilicon layer (130) located on at least a part of a surface of the passivating contact layer (120) away from the substrate (110); the passivating contact layer (120) including a first tunneling layer (121) and a first doped layer (122), the first tunneling layer (121) and the first doped layer (122) being sequentially stacked on the first region (A) of the first surface (S1) of the substrate (110) in a direction away from the second surface (S2); and a first passivation layer (140), located on a surface of the polysilicon layer (130) away from the passivating contact layer (120) and on the second region (B) of the first surface (S1).

The invention discloses a back contact cell and a photovoltaic module, relates to the technical field of photovoltaic, and aims to generate a strong electric field on the front surface of a substrate layer through a first passivation layer, separate majority carriers from minority carriers, reduce the carrier recombination rate on one side of the front surface of the back contact cell and improve the photoelectric conversion efficiency of the back contact cell. And moreover, the dependence on chemical passivation by using hydrogen is reduced, so that the problem of ultraviolet light induced degradation in the existing battery technology is inhibited and even solved. The back contact cell includes a substrate layer, and a first passivation layer disposed on a front surface of the substrate layer. The material of the first passivation layer includes a high work function material or a low work function material. The work function of the high work function material is greater than 4.8 eV; or the work function of the low work function material is less than 4.3 eV. The photovoltaic module comprises a battery string and a packaging layer. The battery string is formed by electrically connecting a plurality of back contact batteries provided in the first aspect and various implementation modes thereof; the encapsulation layer covers the surface of the battery string.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact cell and a manufacturing method thereof, a back contact laminated cell and a photovoltaic module, and the manufacturing method comprises the steps: providing a substrate with a first surface and a second surface which are opposite to each other, and the second surface comprises a first region and a second region which are alternately arranged along a second direction; forming a laminated structure comprising a tunneling layer, a doped polycrystalline silicon layer and a first protection layer which are stacked on the first region; forming an initial second passivation lamination layer which covers the second surface and comprises an intrinsic amorphous silicon film and a doped amorphous silicon film which are stacked; forming a second protection layer on one side, far away from the substrate, of the doped amorphous silicon film; etching the first region by adopting a first laser etching process; and taking the second protection layer on the second region as an etching barrier layer, taking the first protection layer as an etching stop layer, and removing the initial second passivation lamination layer or the second protection layer and the initial second passivation lamination layer remaining on the first region by adopting a first etching solution, thereby at least facilitating the improvement of the photoelectric conversion efficiency of the back contact battery.

The invention provides a solar cell and a preparation method thereof. The solar cell comprises a silicon substrate, the front surface of the silicon substrate is provided with a textured structure, the front surface of the silicon substrate is divided into a working area and an edge isolation area, the working area comprises a p-type emitter, a first passivation layer and a first electrode which are sequentially arranged on the front surface from inside to outside, and the edge isolation area comprises the first passivation layer arranged on the front surface. A tunneling oxide layer, an n-type doped polycrystalline silicon layer, a second passivation layer and a second electrode are sequentially arranged on the back face of the silicon substrate from inside to outside, the reflectivity of the suede structure in the working area is R1, the reflectivity of the suede structure in the edge isolation area is R2, R1 / R2 is within the range of 0.3-3, and R2 is within the range of 0.3-3. And the distance between the suede structure substrate of the working area and the suede structure substrate of the edge isolation area is within the range of 3-10 [mu] m.

The invention discloses a back contact cell, a photovoltaic module and a manufacturing method of the back contact cell, and relates to the technical field of solar cells, the back contact cell comprises a semiconductor substrate comprising a first surface, a second surface and a side surface, and the second surface is provided with a first area and a second area. The first doped semiconductor layer is disposed in at least a portion of the first region, and the second doped semiconductor layer is disposed in the second region and extends to a portion of the first doped semiconductor layer. The side face is provided with a first texture structure area extending in the direction from the first face to the second face, and the ratio of the length of the first texture structure area to the thickness of the semiconductor substrate is smaller than or equal to 80%; according to the invention, the probability of tiny defects between layers caused by different lateral etching efficiencies between the first doped semiconductor layer and the semiconductor substrate and between the second doped semiconductor layer and the semiconductor substrate can be reduced or eliminated, so that the problem of recombination of the finally obtained back contact cell can be reduced or eliminated, and the passivation effect of the back contact cell can be improved; therefore, the cell efficiency of the back contact cell is improved.

Provided is a back-contact solar cell. The back-contact solar cell includes: a substrate having first doped regions, second doped regions and gap regions arranged on the substrate; first doped semiconductor layers located on the corresponding first doped regions; second doped semiconductor layers located on the corresponding second doped regions, a conductive type of a second doping element within the second doped semiconductor layer is different from that of a first doping element within the first doped semiconductor layer; a conductive layer located on part of the gap region; a passivation layer covering the first doped semiconductor layers, the second doped semiconductor layers, the conductive layers and the gap regions; first electrodes in electrical contact with the first doped semiconductor layers; and second electrodes, in electrical contact with the second doped semiconductor layers.

The invention is applicable to the field of photovoltaic technology, and provides a solar cell, a cell module and a photovoltaic system.The solar cell comprises a silicon substrate, and a backlight surface of the silicon substrate is provided with a plurality of grooves; the doped region structures are at least arranged at the plurality of grooves, each doped region structure comprises an internal expansion layer arranged in the silicon substrate, and a passivation layer and a first doped layer which are sequentially arranged on the backlight surface of the silicon substrate, and the passivation layer is provided with a plurality of hole structures; for at least part of the grooves, the number of the hole structures at the corresponding positions of the edges of the grooves is larger than that of the hole structures at the corresponding positions of the middles of the grooves. Holes are reduced in the middle of the groove, the passivation effect is improved, and surface recombination of carriers is reduced; and meanwhile, the holes are additionally formed in the edges of the grooves, so that the carrier transmission capability is improved, and carrier transmission recombination is reduced. Therefore, the photoelectric conversion efficiency and the overall performance of the solar cell are improved together.

The invention provides a photovoltaic module, and relates to the technical field of photovoltaics. The photovoltaic module comprises an interconnection piece and a plurality of battery pieces. The battery piece comprises a current collection electrode which is arranged on the side, away from the doped conductive layer, of the passivation layer, the current collection electrode comprises a transmission part and a plurality of contact parts, and interval areas exist between the adjacent contact parts in the first direction; the transmission part is arranged on one side, far away from the semiconductor substrate, of the contact part and is in contact connection with the plurality of contact parts; the plurality of interconnection parts are electrically connected with the current collection electrodes; along the second direction, the plurality of interconnection parts are arranged in rows to form interconnection part rows; in the battery piece, the areas located in the two opposite boundaries of the interconnection part columns in the first direction are confluence areas, and at least one confluence area is provided with at least one part of at least one contact part and a partial transmission part. The pulling force of the current collection electrode and the semiconductor substrate can be enhanced, falling or pulling-off is avoided, and meanwhile collection and transmission of current are facilitated.

The invention relates to the technical field of solar cells, and particularly discloses a back contact solar cell and a preparation method thereof, a cell assembly and a photovoltaic system, the back contact solar cell comprises a silicon substrate, the silicon substrate is provided with a first surface, a second surface and a side surface, the first surface and the second surface are oppositely arranged, and the side surface is respectively connected with the first surface and the second surface; the anti-reflection passivation composite layer comprises a first branch part arranged on the first surface and a second branch part extending from the edge of the first branch part to the outside of the side surface; the anti-reflection passivation composite layer comprises an ultrathin silicon oxide layer, an aluminum oxide layer, a silicon nitride layer, a silicon oxynitride layer and a silicon oxide layer which are sequentially arranged in the direction away from the silicon substrate, and the refractive indexes of the silicon nitride layer, the silicon oxynitride layer and the silicon oxide layer are sequentially decreased. Influences brought by defects on the side face of the silicon substrate can be effectively solved, parasitic absorption on the edge of the cell can be reduced, the anti-reflection and passivation effects of the anti-reflection and passivation composite layer can be effectively improved through mutual cooperation of the multiple material layers, the stress problem can be improved, the conversion efficiency of the cell can be integrally and effectively improved, and the service life of the cell can be prolonged. And the long-term reliability of the battery is ensured.

The invention relates to a back contact solar cell and a preparation method thereof, the back contact solar cell comprises a front surface and a back surface which are oppositely arranged on a semiconductor substrate, and the back surface comprises a first conductive region, a second conductive region and an isolation structure unit, the first conductive regions and the second conductive regions are opposite in conductive type and are alternately arranged in the first direction of the semiconductor substrate, the isolation structure units are located between the first conductive regions and the second conductive regions, and the length of the isolation structure units in the first direction ranges from 20.0 micrometers to 200.0 micrometers. Each isolation structure unit comprises a first isolation region, a second isolation region, a third isolation region, a fourth isolation region and a fifth isolation region which are different in isolation region morphology. According to the isolation structure unit provided by the invention, the good insulation effect is realized, the collection efficiency of current carriers is improved, the passivation performance of the isolation region is improved, meanwhile, the damage to the battery caused by laser grooving can be reduced, and the photoelectric conversion efficiency of the back contact battery is improved.

The invention discloses a solar cell and a photovoltaic module, and relates to the field of photovoltaic technology. The solar cell includes: a semiconductor substrate having a first semiconductor layer on a first surface; the passivation layer at least covers one side, deviating from the semiconductor substrate, of the first semiconductor layer; the seed layer penetrates through the passivation layer and is conductively connected with the first semiconductor layer; at least part of the first grid line is arranged on the side, away from the semiconductor substrate, of the seed layer, and the first grid line is formed by base metal slurry. The height of the seed layer is h1, the height of the first grid line is h2, and 0.08 < = h1 / h2 < = 0.8. Compared with the prior art in which the silver paste burns through the passivation layer to integrally form the silver electrode, the amount of the silver paste required for manufacturing the whole electrode structure of the solar cell can be reduced, and the manufacturing cost of the whole electrode structure is reduced.

The invention discloses a method for passivating a perovskite solar cell by using diphenylamine ammonium salt and a derivative thereof, and belongs to the technical field of perovskite solar cells. According to the method, diphenylamine ammonium salt and a derivative thereof are introduced as an interface modification layer of perovskite through a solution spin-coating process, so that in-situ passivation is realized. The diphenylamino ammonium salt and the derivative thereof can effectively reduce surface defects of perovskite, passivate uncoordinated lead ions, supplement iodine vacancies, significantly reduce non-radiative recombination of a perovskite layer and promote charge extraction by virtue of unique properties of the diphenylamino ammonium salt and the derivative thereof, so that the open-circuit voltage and fill factors of the perovskite solar cell are improved. Meanwhile, large-volume ammonium cations can be gathered on a crystal boundary, so that the defect of the crystal boundary is filled, and ion migration is inhibited. In addition, after passivation, moisture can be effectively prevented from invading the three-dimensional perovskite structure, and the humidity stability and the storage stability of a cell device are remarkably improved. The invention aims at improving the photoelectric conversion efficiency of the perovskite solar cell and realizing the long-term stability of the device performance.

The invention belongs to the technical field of perovskite solar cells, and provides synthesis and application of a novel self-assembled monomolecular hole transport material with conjugated extended tail ends. According to the self-assembled monomolecular hole transport material, a carbazole group is used as a terminal core, an aromatic ring is introduced to the terminal of carbazole to extend a conjugated structure, an alkyl chain is used as a connecting unit, phosphoric acid or acetic acid is used as an anchoring group, and the self-assembled monomolecular hole transport material with conjugated extended terminal is formed. And the stability, the hole transport property, the hole extraction capability and the interface passivation capability of the material are improved. Experiments show that the self-assembled monomolecular hole transport material has an HOMO energy level matched with a perovskite layer, and hole transport is facilitated. When the self-assembled monomolecular hole transport material disclosed by the invention is applied to a trans-perovskite solar cell with a band gap of 1.53 eV, the photoelectric conversion efficiency as high as 26.11% is obtained, and excellent device stability is shown.

The invention relates to the technical field of iron wire electrogalvanizing passivation monitoring, and discloses an iron wire electrogalvanizing passivation intelligent monitoring system with self-adaptive coating thickness control, and the system comprises a coating parameter analysis module which can analyze the matching degree of the coating thickness and the passivation effect according to the equipment operation state information, and generates a parameter analysis parameter set; based on the parameter set, the passivation feature extraction module extracts a space feature value and a distribution variable quantity of a passivation film on the surface of the iron wire to generate an optimized parameter set; the thickness correlation modeling module analyzes the correlation between the coating thickness and the passivation characteristics and generates a dynamic regulation and control result; the abnormal intervention adjustment module extracts a real-time feature matching rate and the like to generate an intervention adjustment data set; and the dynamic feedback regulation and control module analyzes the linkage demand and generates a feedback data table. The system can monitor the iron wire electrogalvanizing passivation process in a self-adaptive mode, the coating thickness is accurately regulated and controlled, and the passivation effect stability and the production efficiency are improved.

The invention provides a silicon wafer and a preparation method thereof, and a solar cell and a preparation method thereof. The silicon wafer is provided with a first surface and a second surface which are opposite, the first surface is provided with a suede structure, and at least one part of the second surface is provided with an irregular hill-shaped structure. The preparation method of the silicon wafer comprises the following steps that acid etching is carried out on the first surface of the silicon wafer to be textured, then alkali texturing is carried out, so that a textured structure is formed on the first surface, and the textured structure can comprise a plurality of pyramid units; and immersing the silicon wafer subjected to alkali texturing into an alkali solution containing an organic polymer additive (such as polyoxyethylene), and finely adjusting the textured structure of the silicon wafer through etching of the alkali solution containing the organic polymer additive so as to form at least one concave part with a light trapping effect on at least one tower surface of the pyramid unit. The silicon wafer and the solar cell not only have excellent light trapping performance, but also do not affect the subsequent passivation effect, thereby effectively improving the current and efficiency of the solar cell.

The invention relates to the photovoltaic field, and provides a back contact cell and a photovoltaic module, the back contact cell comprises a substrate, a first passivation layer, a plurality of isolation parts, a first doped conductive layer, a second doped conductive layer, a first electrode and a second electrode, the first passivation layer is located on a first surface of the substrate; the plurality of isolation parts are arranged on the surface, deviating from the substrate, of the first passivation layer at intervals; doped elements in the first doped conductive layer and doped elements in the second doped conductive layer have different conductive types; the first electrode is in electrical contact with the first doped conductive layer; the second electrode is in electrical contact with the second doped conductive layer; the orthographic projection of the isolation part on the second surface is separated from the orthographic projection of the first electrode on the second surface, and the orthographic projection of the isolation part on the second surface is separated from the orthographic projection of the second electrode on the second surface. The performance of the back contact battery can be improved at least, and the structural stability of the stacked back contact battery is improved.