4722 results about "Passivation" patented technology

The invention provides an array substrate and a display device, and the array substrate comprises a substrate; the gate insulating layer is arranged on the substrate; the data line is arranged on the gate insulating layer; the first passivation layer is arranged on the gate insulation layer and covers the data line; the first shielding electrode is arranged on the first passivation layer, and the first shielding electrode is connected with the direct-current voltage signal output end; the second passivation layer is arranged on the first passivation layer and covers the first shielding electrode; the common electrode is arranged on the second passivation layer, and a part of the common electrode is overlapped with the data line and the first shielding electrode; the pixel electrode and the common electrode are arranged on the same layer or stacked, and the pixel electrode is insulated from the common electrode. The first shielding electrode is connected to the direct-current voltage signal, so that the data voltage signal on the data line does not affect the signal on the common electrode, coupling capacitance between the common electrode and the data line is avoided, and poor display of picture flicker is avoided.

The invention relates to a connecting device (1) for electrically connecting at least two terminals, comprising: - at least one connecting element (2) designed for conducting current between the at least two terminals, with at least two contact areas (2a, 2b) for electrical and mechanical connection to the respective terminal, wherein the connecting element (2) comprises a metallic material (3) and a passivation layer (4) that forms at least in one fault condition and encloses the metallic material (3), and - a flux (8) that can be thermally activated by heat input due to a fault condition, which is designed to remove the passivation layer (4) in order to cut through the connecting element (2) in the molten area (2c) in the case of a fault condition that melts only the metallic material (3).

The invention discloses a heterojunction solar cell, a preparation method thereof and a photovoltaic module, and relates to the field of heterojunction solar cells. The heterojunction solar cell comprises a substrate; a front passivation layer and a front anti-reflection layer are sequentially arranged on the front surface of the substrate from inside to outside; the back surface of the substrate is provided with an N-type contact region and a P-type contact region; the N-type contact area is provided with a first passivation layer, a first conductive layer, a first mask layer, a seed layer, a copper gate electrode, insulation paste and a solder strip from inside to outside in sequence. The P-type contact area is provided with a second passivation layer, a second conductive layer, a third conductive layer, a seed layer, a copper gate electrode and a solder strip from inside to outside in sequence. Solder paste is arranged on the side wall of the copper gate electrode. The copper electroplating technology can accurately control the height and width, and is of a main-grid-free structure, so that the material cost is reduced, and the double-sided rate of the solar cell is improved; the conductivity of copper is superior to that of silver paste, so that the short-circuit current, the filling factor and the efficiency of the solar cell structure can be improved.

A surface acoustic wave resonator comprises a multi-layer piezoelectric substrate including a carrier substrate, a layer of a first dielectric material disposed on the carrier substrate, and a layer of piezoelectric material disposed on the layer of the first dielectric material, interdigital transducer electrodes disposed on the layer of piezoelectric material and including interleaved electrode fingers, and a layer of a second dielectric material disposed on a central interleaved region of the interleaved electrode fingers, gap regions of the interdigital transducer electrodes being either free of the layer of the second dielectric material or having a thinner layer of the second dielectric material than the central interleaved region to reduce spurious signals in an admittance curve of the surface acoustic wave resonator.

The embodiment of the invention provides a solar cell slice, a preparation method of the solar cell slice and a photovoltaic module, and the preparation method comprises the steps: providing a solar cell initial structure, and carrying out the thinning of a preset region of the solar cell initial structure through a first laser according to a first cutting width; the PN junction in the preset area is removed through a wet etching process, an isolation groove with a tower footing structure is obtained in the front face of the solar cell initial structure, the isolation groove penetrates through the crystalline silicon substrate in the first direction, and meanwhile the tower footing structure is formed on the back face of the solar cell initial structure; respectively forming a functional film layer and an electrode on the back surface and the front surface of the solar cell initial structure; according to the invention, the second laser is used for cutting the isolation groove according to the second cutting width to obtain the solar cell slice with the step-shaped edge, and the solar cell slice does not need to be subjected to independent section passivation treatment, so that the technological process is simplified, and the production yield is also improved.

The invention belongs to the technical field of solar cells, and relates to a perovskite laminated cell and a preparation method thereof, the perovskite laminated cell can reduce light parasitic absorption, the perovskite laminated cell comprises a bottom crystalline silicon cell, the bottom crystalline silicon cell comprises a substrate, the substrate comprises a first surface and a second surface which are opposite to each other, a first tunneling oxide layer and a first composite passivation layer are sequentially arranged on the first surface in the direction perpendicular to and away from the first surface, and the first composite passivation layer comprises first doped crystalline silicon conductive regions and first wide-band gap conductive regions which are alternately arranged in the direction parallel to the first surface; the top perovskite cell is arranged on the first composite passivation layer and is electrically connected with the bottom crystalline silicon cell, and the top perovskite cell comprises a hole transport layer, a perovskite active absorption layer, an electron transport layer, an interface buffer layer, a transparent conductive layer and an anti-reflection layer which are sequentially far away from the first composite passivation layer; and a first electrode in electrical contact with the transparent conductive layer.

The invention discloses a high-corrosion-resistance powder coating and a preparation method thereof, and belongs to the technical field of powder coatings. Through modification of the resin system, the ultraviolet absorbent modified epoxy resin and the weather-resistant polyester resin are compounded, so that the ultraviolet resistance and the weather resistance of the resin system are remarkably improved, and the corrosion resistance reduction caused by light aging is avoided; the flake graphene forms an excellent physical barrier to block corrosion medium permeation, then chemical passivation of zinc phosphate is combined to inhibit electrochemical corrosion, the synergistic effect is achieved, the corrosion resistance is synergistically enhanced from the physical and chemical angles, the path of the corrosion medium is further prolonged in combination with the laminated structure of the glass flakes, and the corrosion resistance is improved. And meanwhile, the filler A and the filler B can also play a role in enhancing the mechanical strength of the coating, so that the powder coating with high corrosion resistance can be obtained on the whole.

In the field of photovoltaic power generation, a solar cell and a solar cell module capable of improving photoelectric conversion efficiency are provided. [Solution] The solar cell has a first surface and a second surface arranged back to back, and the first surface has first and second regions arranged alternately, and the second region includes a substrate having a groove formed in it relative to the first region, a passivation contact structure located in the first region, a passivation layer covering the surface of the passivation contact structure and the inner wall surface of the groove, and a first electrode located on the passivation layer and electrically connected to the passivation contact structure, and the side of the groove or the side of the passivation contact structure has a recess that is recessed inward along a first direction that is the direction from the second region to the first region, and the recess includes a continuous first side surface and a second side surface, the first side surface is connected to the first region, and the angle between the first side surface and the second side surface is a first obtuse angle.

The invention relates to the technical field of flexible transparent electrodes, in particular to a Cu / Al laminated metal grid flexible transparent electrode and a preparation method thereof. The Cu / Al laminated metal grid flexible transparent electrode comprises a flexible substrate, a copper layer arranged on the flexible substrate and an aluminum layer arranged on the copper layer, and the aluminum layer located on the outer layer spontaneously forms an Al2O3 passivation layer with the thickness of 2-5 nm in air. The Al2O3 passivation layer can effectively prevent oxygen and moisture from permeating inwards, so that oxidation of the copper layer in a humid or high-temperature environment is fundamentally inhibited, long-term stability of the electrical property of the electrode is ensured, and meanwhile, due to the fact that the thickness of the copper layer is 150-250 nm, excellent conductivity is provided, and low square resistance is achieved; the latticed structure maintains high light transmittance of the electrode while ensuring a high conductive path. Finally, the structure has excellent oxidation resistance, high light transmittance, low sheet resistance and flexible stability under the support of a flexible transparent substrate with the thickness of 50-200 [mu] m, and meets the harsh requirements of a new generation of flexible optoelectronic devices on electrode performance.

The invention provides a preparation method of a back contact solar cell. The preparation method comprises the following steps: equally cutting a diffused and etched cell into at least two fragments; performing surface texturing on the cut fragments; performing a passivation process on the back surface and the front surface of the fragment, and forming passivation layers on the back surface, the front surface and the cutting surface of the fragment in the passivation process; patterning the fragments on which the passivation layers are formed so as to define alternative P-type regions and N-type regions on the back surfaces of the fragments; and preparing metalized electrodes corresponding to the P-type region and the N-type region on the back surface of the fragment. The problems that in the prior art, the efficiency loss is large, the repairing cost is high, and the whole piece is scrapped due to local defects caused by battery piece cutting can be solved.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell manufacturing method for improving passivation performance and a back contact cell thereof, and the method comprises the steps: S2, depositing a first semiconductor layer and a phosphorosilicate glass layer on the back surface of a silicon wafer, and reserving the first semiconductor layer and the phosphorosilicate glass layer as a first mask layer; s3, performing texturing cleaning on the front surface of the silicon wafer; the first mask layer is removed in the final cleaning process after texturing; s4, forming a passivation layer and an anti-reflection layer on the front surface of the silicon wafer; s5, coating the back surface to form a second mask layer; s6, forming a second semiconductor opening region; and S7, texturing or polishing the second semiconductor opening area on the back surface, and cleaning by using an HF solution with the mass concentration of 0.5%-5% to remove the second mask layer and the winding plating layer generated in the front surface coating process in the S4. The back surface winding plating layer does not need to be removed, damage to the first semiconductor layer and the front surface film layer can be avoided, the overall passivation level can be improved, and therefore the battery efficiency is improved.

The invention provides a solar cell and a photovoltaic module, and relates to the field of photovoltaic technology. The solar cell includes: a silicon substrate including a first surface and a second surface opposite to each other in a thickness direction of the silicon substrate; the first doping layer and the first passivation layer are sequentially arranged on the first surface; the first seed layer penetrates through the first passivation layer and is electrically connected with the first doping layer, the first base metal layer covers the first seed layer, the first base metal layer is electrically connected with the first doping layer through the first seed layer, and the first seed layer is of a honeycomb structure comprising a plurality of first holes; the first base metal layer comprises a plurality of first metal particles; an interface between the first base metal layer and the first seed layer includes a plurality of interface regions, and in a first interface region of the plurality of interface regions, the first metal particles are filled in the first holes. According to the invention, the cost of the battery is reduced, the conductivity, the drawing force and the structural stability of the electrode structure are improved, and recombination is reduced.

Disclosed is a semiconductor device comprising a substrate including a first surface and a second surface that are opposite to each other, a via structure that penetrates the substrate, a first passivation pattern disposed on the first surface of the substrate and extending onto an upper sidewall of the via structure, and a second passivation pattern disposed on the first passivation pattern and exposing an uppermost surface of the first passivation pattern. At least a portion of the second passivation pattern is externally exposed. The first passivation pattern includes at least one selected from oxide and silicon oxide. The second passivation pattern includes at least one selected from nitride and silicon nitride.

The invention discloses a catalytic electrode which comprises a substrate, and an anti-corrosion layer and a sulfur-phobic layer which are sequentially attached to the substrate, the substrate is a blank foamed nickel substrate, the anti-corrosion layer is formed by dipping the foamed nickel substrate with a ferric salt solution, and the sulfur-phobic layer is formed by processing a precursor with a cobalt salt solution through electro-deposition. Accordingly, a corresponding preparation method is also established, a blank foamed nickel substrate is adopted, firstly, the foamed nickel substrate is subjected to dipping treatment with an iron salt solution to obtain a precursor with an anti-corrosion layer, and then the precursor is subjected to electro-deposition treatment with a cobalt salt solution to form the sulfur-phobic layer on the anti-corrosion layer. Wherein the anti-corrosion layer can isolate a high-sulfur environment and prevent the substrate from being corroded; the sulfur phobic layer may prevent sulfur products from depositing and passivating the electrode. The catalytic electrode provided by the invention solves the problems of sulfur reaction corrosion and passivation, shows excellent catalytic activity and stability, and can be used for catalyzing sulfur oxidation reaction for a long time. In conclusion, the method has the advantages of mild conditions, simple process, economy and practicability, and has obvious large-scale industrial production potential.

The present application relates to the technical field of solar cells. Disclosed are a back contact cell, a photovoltaic module, and a method for manufacturing a back contact cell. The back contact cell comprises: a semiconductor substrate comprising a first face, a second face and a side face, wherein the second face has a first region and a second region; a first doped semiconductor layer is arranged in at least a portion of the first region, and a second doped semiconductor layer is arranged in the second region and extends over a portion of the first doped semiconductor layer; and the side face has a first textured structure region extending in a direction from the first face to the second face, the ratio of the length of the first textured structure region to the thickness of the semiconductor substrate being less than or equal to 80%. Thus, the probability of generating micro-defects between layers due to different lateral etching efficiencies among a first doped semiconductor layer, a second doped semiconductor layer and a semiconductor substrate can be reduced or eliminated, so as to reduce or eliminate the problem of recombination of finally obtained back contact cells, thereby improving the passivation effect of back contact cells, and thus increasing the cell efficiency of the back contact cells.

The invention relates to the technical field of alloy processing, and discloses a high-performance corrosion-resistant nickel-based alloy plate and a preparation method thereof, and the method comprises the following steps: raw material preparation, smelting treatment, casting treatment, hot rolling treatment, solution treatment, aging treatment and surface passivation treatment. According to the invention, when a composite acid system is adopted for passivation treatment, the concentration of chromium / molybdenum atoms in a passivation film is optimized and balanced due to the specific ratio of nitric acid to chromic acid, a chromium oxide provides a compact passivation barrier, and a molybdenum oxide endows the film layer with a self-repairing characteristic to synergistically inhibit pitting nucleation; meanwhile, nano titanium dioxide particles pretreated by silane are embedded into the passivation film in situ under the action of ultrasonic oscillation, organic pollutants adsorbed on a film layer can be decomposed by the photocatalytic characteristic of the nano titanium dioxide particles, the local corrosion effect of a battery caused by dirt coverage is avoided, and the performance of the battery is improved through double upgrading of components and the structure of the passivation film. And the alloy plate has excellent pitting corrosion resistance and fouling resistance in a chloride ion-containing medium.

The invention relates to a nickel-molybdenum anode electrode based on a crack induced self-passivation mechanism and a preparation method of the nickel-molybdenum anode electrode. The method comprises the following steps that 1, a substrate is soaked in a solution A for 1-25 min and then taken out; 2, immersing the substrate treated in the step 1 into a solution B for 10 minutes to obtain a precursor; and 3, putting the precursor into a Joule ultrafast heating device, heating the precursor to 380-450 DEG C at a heating rate greater than or equal to 100 DEG C / min in an air or inert atmosphere, carrying out heat preservation for a certain time, and cooling to obtain the nickel-molybdenum anode electrode. According to the method, the foam nickel three-dimensional framework is free of structural damage through short-time chemical soaking, the original high porosity and interconnection network of the foam nickel three-dimensional framework are perfectly reserved, and the loss rate of the specific surface area is reduced. According to the prepared nickel-molybdenum anode electrode, by means of the self-passivation effect of the crack edge and the component storage function of the thick layer, the Mo dissolution rate is reduced by one order of magnitude, and thousand-hour-level stable operation under the low current density can be achieved.

The invention discloses metallized silver paste for improving sintering dusting of a TOPCon battery, a preparation method and application, and belongs to the technical field of solar battery manufacturing, and the technical scheme is that the metallized silver paste comprises the following components in percentage by mass: 72-87% of a metal phase; 3-9% of a glass phase; 8-12% of an organic carrier; 0.1%-0.5% of a polyimide precursor; 0.1 to 0.5 percent of cerium oxide; wherein the polyimide precursor forms a cross-linked network at a high temperature, the cerium oxide is used as a passivation layer protective agent, and lithium borosilicate glass is also added into the glass phase; according to the metalized silver paste for improving the sintering dusting of the TOPCon cell, the preparation method and the application, the dusting rate is reduced by improving and optimizing materials and process parameters, and compared with a traditional process, the efficiency, the photoelectric conversion efficiency and the yield of the solar cell are further improved.

The invention provides a solar cell, a manufacturing method thereof and a photovoltaic module, and relates to the photovoltaic field. The solar cell comprises a substrate which comprises a first surface and a second surface which are opposite to each other, the first surface is provided with a groove, microstructures are arranged on the first surface of the periphery of the groove, the bottom surface of the groove and the side face of the groove respectively, and the multiple microstructures comprise a first conical structure, a second conical structure and a columnar structure, the height direction of the first conical structure intersects with the height direction of the second conical structure, and the side face of the columnar structure inclines towards the peripheral direction of the groove. The first passivation layer is located on the first surface. The problem that in the prior art, a solar cell is low in sunlight absorption rate is at least solved.

The invention relates to the technical field of refractory materials, in particular to an antioxidant and application thereof in steel ladle slag line bricks, and the antioxidant comprises a Si / SiC multiphase material, modified nano Al2O3 and CaF2; the ladle slag line brick comprises an antioxidant, fused magnesite, crystalline flake graphite and phenolic resin. Si-SiC compound waste is subjected to magnetic separation and acid pickling, then a SiO2 passivation layer is formed through pre-oxidation, moisture and air in the storage period are isolated, and a titanate coupling agent is introduced to improve the wettability and compatibility with phenolic resin. P2O5 released by phosphate on the surface of the modified nano Al2O3 at a high temperature reacts with alkali (earth) metal migrated to a SiO2 oxide layer to prevent the alkali (earth) metal from forming a low-melting-point eutectic substance, CaF2 reacts with SiO2 along with temperature rise, a passivation layer is broken, internal Si and SiC are directly exposed, and boron oxide of the modified nano Al2O3 remarkably reduces activation energy and a temperature threshold value of the reaction of CaF2 and SiO2.

The invention provides a back contact solar cell and a preparation method thereof, a laminated cell and a photovoltaic module, and the back contact solar cell comprises a first conductive region and a second conductive region which are alternately arranged on a second surface of a semiconductor substrate, a first passivation layer, a second passivation layer and a first transparent conductive layer are stacked in the first conductive area, the first passivation layer and the semiconductor substrate are the same in conductive type, and the second passivation layer and the first passivation layer are opposite in conductive type; a third passivation layer and a second transparent conductive layer are arranged in the second conductive area, and a gap is formed between the first transparent conductive layer and the second transparent conductive layer; a fourth passivation layer, a fifth passivation layer and a third transparent conductive layer are stacked on the side surface of the semiconductor substrate, the conduction type of the fourth passivation layer is the same as that of the semiconductor substrate, and the conduction type of the fifth passivation layer is opposite to that of the fourth passivation layer.

The invention provides a back contact solar cell, a solar laminated cell and a photovoltaic module, and relates to the field of photovoltaic technology, the back contact solar cell comprises a substrate, a carrier transport layer, a first anti-reflection layer, a first electrode and a second electrode, the substrate comprises a first surface with a first part and a second part, the first part is provided with a first passivation contact structure, the second part is provided with a second passivation contact structure, the carrier transmission layer is located on the sides, away from the substrate, of the first passivation contact structure and the second passivation contact structure, the first anti-reflection layer is located on the side, away from the substrate, of the carrier transmission layer, and the first electrode is located on the carrier transmission layer. The first electrode is located on the carrier transmission layer and electrically connected with the first passivation contact structure, the second electrode is located on the carrier transmission layer and electrically connected with the second passivation contact structure, the projection of the first electrode is located in the projection of the first passivation contact structure, the projection of the second electrode is located in the projection of the second passivation contact structure, and the cell efficiency is improved through the design.

The embodiment of the invention provides a back contact cell and a preparation method thereof, and a photovoltaic module, and relates to the field of solar cells, and the back contact cell comprises a silicon substrate; a first carrier collection layer having a first conductivity type; a second carrier collection layer having a second conductivity type opposite to the first conductivity type; the passivation anti-reflection layers are arranged on the front surface and the side surface of the silicon substrate; the conducting layers are arranged on the back face and the side face of the silicon substrate, the conducting layers cover the first carrier collection layer and the second carrier collection layer on the back face of the silicon substrate, and the conducting layers are provided with isolation grooves penetrating through the conducting layers in the spacer regions; the conductive layer is located on the side face of the silicon substrate and located on the side, away from the silicon substrate, of the passivation anti-reflection layer. The back contact battery has stable side passivation performance, so that the stability of the back contact battery is enhanced.

The invention discloses a secondary battery, and belongs to the technical field of batteries, according to the secondary battery, cyclic sulfate is introduced into an electrolyte, and meanwhile, the content of the cyclic sulfate in the electrolyte, the nuclear magnetic displacement value of central carbon atoms of the electrolyte and the passivation capability of a negative pole piece are cooperatively regulated and controlled, so that the first-effect performance of the secondary battery can be effectively improved; and meanwhile, the low level of battery impedance can also be considered.

The invention discloses a back contact solar cell and a preparation method thereof, and relates to the technical field of solar cells. The back contact solar cell comprises a silicon substrate, first doped regions, second doped regions and isolation regions, the first doped regions, the second doped regions and the isolation regions are arranged on a first main surface of the silicon substrate, the first doped regions and the second doped regions are arranged alternately, and the isolation regions are located between the adjacent first doped regions and second doped regions; the tunneling passivation layer is arranged in the first doped region and the isolation region; the intrinsic polycrystalline silicon layer is arranged on the outer side of the tunneling passivation layer of the isolation region; the first doped polycrystalline silicon layer is arranged on the outer side of the tunneling passivation layer of the first doped region and comprises first doped atoms; the emitting electrode is arranged in the second doped region and comprises second doped atoms; the conduction types of the first doping atoms and the second doping atoms are opposite; the intrinsic polycrystalline silicon layer and the first doped polycrystalline silicon layer are located on the same layer. According to the embodiment, the influence of laser etching on the cell can be reduced, the preparation process is shortened, and the photoelectric conversion efficiency of the cell is improved.

The invention discloses a solar cell and a preparation method thereof, and a photovoltaic module, the solar cell comprises a silicon substrate, the backlight surface of the silicon substrate comprises a first area and a second area, the first area comprises a plurality of polishing structures and a plurality of light trapping structures protruding relative to the polishing structures, the light trapping structure comprises one or more combinations of a pyramid, a prismatic table, a pyramid-like pyramid or a prismatic table-like pyramid, the diameter of the light trapping structure is 2-20 microns, and the height of the light trapping structure is 0.2-3 microns. The method can effectively improve the light absorption of the backlight surface of the silicon substrate, gives consideration to the improvement of the passivation performance of the backlight surface of the silicon substrate and the reduction of the film explosion risk, and finally achieves the further improvement of the photoelectric conversion efficiency of the solar cell.

The invention discloses a perovskite solar cell based on a cross-linked interface passivation layer, and relates to the technical field of photovoltaic cell materials. The perovskite solar cell sequentially comprises a transparent conductive substrate, an electron transport layer, a perovskite light absorption layer, a crosslinking interface passivation layer, a hole transport layer and a metal electrode from bottom to top, and the cross-linked interface passivation layer is made of a 4-[10-(4-{(1, 2, 2-trifluorovinyl) oxy} phenyl)-10H-phenoxazine-2-yl] phenylphosphonic acid material. The cross-linked interface passivation layer can significantly improve the photovoltaic performance and stability, the intrinsic stability of the device is greatly enhanced by the cross-linked network, and in a double-85 aging test of 85 DEG C / 85% RH, the time required for attenuating the efficiency of the device to 80% of an initial value can exceed 1000 hours.

The invention discloses a display panel and a display device, the display panel comprises an array substrate and an opposite substrate, the array substrate comprises a substrate, a thin film transistor, a passivation layer and a first transparent conductive layer; n thin film transistors are arranged in the direction from the non-display area to the display area, and N is larger than 1; the thin film transistor comprises a grid electrode, a grid insulating layer, an active layer and an electrode layer, the electrode layer comprises a first electrode and a second electrode which are spaced, and the second electrode is close to the display area; the second metal layer comprises an electrode layer, the first metal layer comprises a common electrode wire which is arranged corresponding to the active layer and forms a grid electrode, and the common electrode wire and the second electrode are connected with different electric signals; the first transparent conductive layer comprises a first conductive part, and the first conductive part is electrically connected with the first electrode via hole; the common electrode wires corresponding to the N thin film transistors are connected to the same electric signal, and the second electrodes of the N thin film transistors are sequentially connected with different electric signals. Through the arrangement, the problem that the wiring is easy to corrode is solved.

The invention discloses a method for preparing a boron nitride-gallium oxide thin film flexible dual-band ultraviolet solar blind detector through Van der Waals stripping, and aims to improve the comprehensive performance of the detector. The method comprises the steps of h-BN substrate pretreatment and surface modification, Sn gradient doped beta-Ga2O3 layer preparation, heterojunction interface passivation treatment, two-step Van der Waals stripping and flexible transfer, ohmic contact electrode preparation, gate type Schottky contact electrode preparation, post-treatment and packaging. According to the core, the interface state density is reduced through Al2O3 passivation, and carrier transport is optimized through Sn gradient doping, so that the detector achieves 200-280 nm dual-band response, the peak response rate is high, the response time is short, the leakage current is low, the flexible bending stability is good, high performance and flexibility are both considered, and industrial application can be achieved.

The invention relates to a solar cell and a manufacturing method thereof, and a photovoltaic module, and the manufacturing method comprises the steps: providing a substrate, a first surface comprises first regions and non-first regions which are alternately disposed in a first direction, the non-first regions comprise interval regions and second regions, and the interval regions are located between the adjacent first regions and second regions; forming a first mask layer on the first surface, and at least removing the first mask layer corresponding to the first region; a first passivation contact layer is formed on the first area and the side, away from the second surface, of the first mask layer, at least the first passivation contact layer and the first mask layer corresponding to the non-first area are removed, the first area and the second area are located on the same first plane, and the first plane is parallel to the plane where the substrate is located; and forming a second passivation contact layer on the first passivation contact layer and one side, far away from the second surface, of the non-first region, and at least removing the second passivation contact layer corresponding to the first region and the spacer region. The performance of the solar cell can be improved.