12856 results about "Passivation" patented technology

The invention relates to a preparation method of a solar cell, the solar cell and a photovoltaic module, and the solar cell comprises a substrate which comprises a first surface and a second surface. The first surface comprises a metal area and a non-metal area, and the electrode is arranged in the metal area. The metal area is provided with the first suede structure, the non-metal area is provided with the second suede structure, and the reflectivity of the second suede structure is smaller than that of the first suede structure, so that the first suede structure in the metal area is gentle, and the fluctuation amplitude of the second suede structure in the non-metal area is large. The doping layer is arranged in the metal area to prepare the emitting electrode, the uniformity of the doping layer is high due to the gentle first suede structure, and the photoelectric conversion efficiency and stability of the metal area can be improved. The second suede structure with the large fluctuation amplitude improves the sunlight absorption capacity of the non-metal area. And the first suede structure and the second suede structure are respectively provided with a passive film layer and an anti-reflection film layer, so that the efficiency and the performance of the battery are improved.

The embodiment of the invention relates to the field of photovoltaic technology, and provides a solar cell and a preparation method thereof, and a photovoltaic module, so as to avoid the electric leakage condition of doped regions with different doping types, thereby improving the photoelectric conversion efficiency. The solar cell comprises a substrate which comprises a front surface and a back surface which are oppositely arranged; the back surface of the substrate comprises a first doped region and a second doped region which are sequentially arranged at an interval, and an insulating region arranged between the first doped region and the second doped region; the doped polycrystalline silicon passivation contact structure is arranged in the first doped region, the doped amorphous silicon structure is arranged in the second doped region, and the passivation layer is arranged in the insulating region; the doped polycrystalline silicon passivation contact structure comprises a tunneling oxide layer and a doped polycrystalline silicon layer which are sequentially laminated on the back surface of the substrate; the doped amorphous silicon structure comprises a doped amorphous silicon layer, and the doped polycrystalline silicon layer and the doped amorphous silicon layer are different in doping type; wherein the passivation layer is not overlapped with the doped polycrystalline silicon passivation contact structure and the doped amorphous silicon structure respectively along the thickness direction of the substrate.

The invention discloses a semiconductor structure manufacturing method and a semiconductor structure, and the manufacturing method comprises the steps: carrying out the periodic cycle etching of a preset number of times on a substrate through employing an etching technology, forming a first intermediate structure on the substrate, and carrying out the first processing of the first intermediate structure, including employing a first gas and a second gas, removing a part of thickness of the passivation layer deposited on the side wall of the first intermediate structure, and reacting with the substrate material which exists on the side wall and is exposed on the surface of the convex part to generate a reaction product layer; and removing the reaction product layer by using a third gas and a fourth gas so as to remove at least part of the lug boss, and repeatedly executing the etching process and the first processing process until a high aspect ratio etching structure is formed on the substrate. According to the method, the etching process and the side wall processing technology are organically combined, the etching rate and the side wall quality are balanced through alternate circulation, and deep silicon etching with the higher aspect ratio and the smaller nanoscale size can be achieved.

The present disclosure relates to the technical field of back contact solar cells, and in particular relates to a combined passivation back contact solar cell having front wide band gap doping, and a preparation method therefor. The solar cell comprises a silicon wafer, and a first semiconductor layer, a second semiconductor layer and a third semiconductor layer arranged on the front face of the silicon wafer. The third semiconductor layer comprises a second tunneling oxide layer and a third doped polycrystalline silicon layer, provided in sequence from inside to outside. The third doped polycrystalline silicon layer is a doped polycrystalline silicon layer containing a first doping element and a second doping element, the first doping element being phosphorus, and the second doping element comprising any one of carbon and oxygen. Furthermore, the band gap width of the third doped polycrystalline silicon layer is ≥1.6eV. The present disclosure, while ensuring a passivation effect, can greatly decrease device investment costs, greatly reduce parasitic absorption of a third semiconductor layer on the front surface of a cell, and increase short-circuit current of the cell, thereby increasing cell conversion efficiency.

The embodiment of the invention relates to the photovoltaic field, and provides a back contact cell and a manufacturing method thereof, and a photovoltaic module, and the back contact cell comprises a first doped region and a second doped region which are located on a substrate and are spaced from each other; the passivation layer is located on the sides, away from the substrate, of the first and second doped regions; the first main grids and the second main grids are alternately arranged in the first direction, the first fine grids and the second fine grids are alternately arranged in the second direction, the first main grids and the fine grids are right opposite to the first doped region, and the second main grids and the fine grids are right opposite to the second doped region; at least part of the main grids comprise non-contact parts and at least one contact part in contact connection with the non-contact parts, the contact parts penetrate through the passivation layer and are in contact connection with the doped region, and each contact part is at least located in a gap between two adjacent same-polarity fine grids; and the main grid is the first main grid, the doped region is the first doped region and the same-polarity fine grid is the first fine grid, and / or the main grid is the second main grid, the doped region is the second doped region and the same-polarity fine grid is the second fine grid, so that the photoelectric conversion efficiency of the cell is improved.

The invention discloses a back contact cell and a photovoltaic module, relates to the technical field of photovoltaic, and aims to perform field passivation on a first region and an overlapping region through a doping layer, and the doping layer can form a favorable electric field consistent with the induction direction of a first doped silicon layer so as to improve the collection efficiency of the first doped silicon layer on current carriers. The back contact cell includes a semiconductor substrate, a tunneling passivation layer, a first doped silicon layer, an intrinsic silicon layer, a second doped silicon layer, and a doped layer. The tunneling passivation layer and the first doped silicon layer are sequentially arranged on the first region and the overlapping region in a stacked mode. The intrinsic silicon layer and the second doped silicon layer are sequentially arranged on the second area in a stacked mode and further extend to cover the tunneling passivation layer and the first doped silicon layer which are located in the overlapping area. The doped layer is disposed within the first region and the overlapping region of the semiconductor substrate. And the doping concentration of a first doping element with the same conduction type as that of the first doping silicon layer in the doping layer is greater than that of the first doping element in the second region of the semiconductor substrate.

The present invention discloses a self-assembled monolayer hole transport material based on an alkyl polyphosphate anchoring group, a synthesis method thereof, and an application in an inverted perovskite solar cell. The present invention uses carbazole or 3,6-diphenylcarbazole with good hole transport properties as a parent core, and achieves complete coverage and stable self-assembly of the material on the substrate surface by improving the anchoring group from traditional alkyl monophosphate to alkyl diphosphate and triphosphate. The synthesis method of the present invention is simple and the synthesis cost is low. The prepared material can achieve the dual functions of hole transport and perovskite interface passivation, while enhancing the self-assembly strength and stability. When the material is used as a hole transport layer in an inverted perovskite solar cell, a photoelectric conversion efficiency of >20% can be obtained without doping, and the material has broad application prospects.

The invention discloses a thiapyran molecule modified solar cell and a preparation method thereof. The cell sequentially comprises an ITO (Indium Tin Oxide) conductive glass layer, a 4-aminotetrahydro-2H-thiapyran-1, 1-dioxide hydrochloride modified [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] phosphonic acid hole transport layer, a Cs0.05 (FA < 0.77 > MA < 0.23 >) < 0.95 > Pb < (I < 0.77 > Br < 0.23 >) 3 wide-band gap perovskite thin film, a phenethyl ammonium iodide passivation layer, an electron transport layer of [6, 6]-phenyl-C61-butyric acid isomethyl ester, a 2, 9-dimethyl-4, 6, 7-tetrahydro-2H-thiapyran-1, 1-dioxide hydrochloride modified [4-(3, 6-dimethoxy-9H-carbazole-9-yl) butyl] the hole barrier layer is made of 1, 7-biphenyl-1, 10-phenanthroline; the electrode layer is made of metal Ag; according to the scheme, the hole transport layer is modified through thiapyran molecules, agglomeration of the hole transport layer is relieved, and a more compact and more uniform self-assembled single layer is generated by inducing favorable crystal orientation. A good bottom interface is obtained based on thiapyran molecule modification, and ordered growth of high-quality perovskite crystal grains is promoted. In addition, the energy level of the hole transport layer is effectively adjusted through thiapyran molecule treatment, and the extraction and transmission of carriers by the hole transport layer are enhanced.

The invention discloses a back contact solar cell, an assembly and a system. The back contact solar cell comprises a silicon substrate, the back surface of the silicon substrate comprises a plurality of first areas and a plurality of second areas, the first areas and the second areas are arranged at intervals, and each of the first areas and the second areas comprises a passivation selective contact area and a non-passivation selective contact area; the non-passivation selective contact area comprises a passivation anti-reflection layer arranged on the surface of the silicon substrate; the passivation selective contact area of the first area comprises a first passivation layer, a selective transmission layer and a first metal electrode which are sequentially stacked on the surface of the silicon substrate from inside to outside. According to the back contact solar cell, the passivation layer and the selective transmission layer are arranged in the first region and combined with the passivation anti-reflection layer, the excellent passivation contact effect is achieved, a narrow-band-gap highly-doped silicon material does not need to be used, the optical parasitic absorption loss is reduced, the photoelectric conversion efficiency is improved, and then the performance of the back contact solar cell is improved.

Process condition management facilitates the combination of dry development and post-development treatment into a single process chamber, eliminating the necessity for a post-dry development bake step in a separate chamber during semiconductor manufacturing. Thermal dry development and plasma dry development may be performed in the same chamber. Thermal dry development, plasma dry development and passivation such as an O2 flash treatment; or thermal dry development, plasma dry development, passivation and hardening operations are enabled without wafer transfer.

The invention discloses a manufacturing method of a back contact battery, relates to the field of photovoltaic technology, and aims to improve the working performance of the back contact battery. The manufacturing method of the back contact battery comprises the following steps: providing a semiconductor substrate; and sequentially forming a first interface passivation layer and a first doped silicon layer which are stacked on the first surface of the semiconductor substrate along the thickness direction of the semiconductor substrate. And forming an insulating mask pattern on a partial region of one side, deviating from the semiconductor substrate, of the first doped silicon layer. And removing the parts, exposed outside the insulating mask pattern, of the stacked first interface passivation layer and the first doped silicon layer. And texturing treatment is carried out on the surface of the area, exposed out of the insulating mask pattern, of the first surface and the second surface. A first passivation layer is formed on the second side of the semiconductor substrate. And sequentially forming a second interface passivation layer and a second doped silicon layer which are stacked on the first interface passivation layer and the first doped silicon layer which are stacked and the first surface. And selectively etching the stacked second interface passivation layer and second doped silicon layer.

The invention provides a solar cell, which comprises a silicon substrate having a backlight surface and a light facing surface which are opposite, the backlight surface comprises first areas and second areas which are alternately arranged, the first areas of the backlight surface are provided with first pyramid structures, the light facing surface is provided with second pyramid structures, the first pyramid structures are provided with first passivation contact layers, and the second pyramid structures are provided with second passivation contact layers; the first pyramid structure is provided with a first passivation contact layer, the reflectivity of the first area is 5%-14%, the second pyramid structure is provided with a passivation antireflection layer, the reflectivity of the light facing face is 5%-14%, the second area is provided with a second passivation contact layer, the reflectivity of the second area is 25%-50%, and the ratio of the area of the first area to the total area of the backlight face is 40%-70%. The light trapping effect of the light-facing surface is further improved by setting different shapes in different areas of the light-facing surface and the backlight surface, and the passivation effect and the carrier transport effect of the surface of the back pyramid structure are balanced while the light trapping effect of the backlight surface is improved; the photoelectric conversion efficiency and the double-sided rate of the solar cell are improved; and the appearance color difference of the receiving surface is improved.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell with a passivated specific light receiving surface and a preparation method and application thereof.The back contact cell comprises a substrate, the substrate is provided with a backlight surface and a light receiving surface, the light receiving surface of the substrate is sequentially provided with a first tunneling oxide layer, a doped amorphous silicon layer and a silicon medium anti-reflection layer, the thickness of the first tunneling oxide layer is 0.2-1.5 nm, and the thickness of the doped amorphous silicon layer is 0.2-1.5 nm; the doped amorphous silicon layer is doped with an oxygen element and a hydrogen element, the first tunneling oxide layer is doped with a hydrogen element, and the content of the hydrogen element close to the side of the doped amorphous silicon layer in the first tunneling oxide layer is greater than the content of the hydrogen element close to the side of the substrate. According to the invention, good passivation effect and optical loss can be taken into account, and the passivation effect is enhanced, so that the passivation effect and current of the battery are improved, the efficiency of the battery is improved, and the equipment cost is low.

The invention discloses a back contact cell and a photovoltaic module, relates to the technical field of photovoltaic, and is used for preventing a first doped silicon layer and a second doped silicon layer which are opposite in conduction type in the back contact cell from being conducted on the side face of a silicon substrate, restraining side face electric leakage and improving the conversion efficiency of the back contact cell. The back contact cell comprises a silicon substrate, a first doped silicon layer, a surface passivation layer, an antireflection layer, an intrinsic silicon layer, a second doped silicon layer and a transparent conductive layer. The silicon substrate comprises a first surface and a second surface which are oppositely arranged, and a side surface connecting the first surface and the second surface. The first doped silicon layer, the surface passivation layer, the antireflection layer, the intrinsic silicon layer, the second doped silicon layer and the transparent conductive layer are sequentially arranged on the side face in the direction away from the side face. The first doped silicon layer and the second doped silicon layer are opposite in conductive type. In the thickness direction of the silicon substrate, the surface passivation layer and the antireflection layer are further sequentially arranged on the second face, and the surface passivation layer and the antireflection layer extend from the second face to the side face.

The invention discloses a solar cell and a preparation method and application thereof, and relates to the technical field of solar cells. P-type doped regions and N-type doped regions are alternately arranged on the back surface of the crystalline silicon substrate, a boron diffusion doped layer, a first passivation layer and a first antireflection layer are sequentially arranged in the P-type doped regions, and a phosphorus-doped silicon oxide layer, a phosphorus-doped polycrystalline silicon layer, a second passivation layer and a second antireflection layer are sequentially arranged in the N-type doped regions from the surface of the crystalline silicon substrate. A traditional TBC battery P region mostly adopts a two-step process of intrinsic amorphous silicon deposition and boron diffusion to form a polycrystalline silicon layer, but the P region does not contain the polycrystalline silicon layer and can be prepared through a one-step boron diffusion process, so that the process steps can be reduced, and the process time can be shortened; and the action of laser and P-region polycrystalline silicon is avoided, the patterning difficulty of the battery is reduced, and the production yield of the battery can be greatly improved.

The invention provides a solar cell and a photovoltaic module, and relates to the technical field of photovoltaics. The solar cell includes a first surface and a second surface opposite to each other in a thickness direction thereof, and a side surface connecting the first surface and the second surface, the side surface including a cut surface and a non-cut surface; an inorganic passivation layer formed on the cutting surface; at least part of the inorganic passivation layer contains carbon elements. In the invention, on one hand, the inorganic passivation layer on the cutting surface is not easy to damage, and a good passivation effect of the inorganic passivation layer is maintained; and on the other hand, the inorganic passivation layer is easier to bond and chain with silicon and the like on the cutting surface, and the binding force with the cutting surface is better.

Described herein are variations of an analyte monitoring system, including an analyte monitoring device. For example, an analyte monitoring device may include a skin-penetrating microneedle array for use in measuring analyte, such as in a continuous manner. The microneedle array may include, for example, at least one microneedle comprising a working electrode comprising an analyte-sensing aptamer that selectively and reversibly binds to analyte. The working electrode comprises at least one thiol-based passivation molecule that provides protection of the working electrode from, by way of example, foulants and interferents. For example, a sensor may be configured to generate a signal that is indicative of a concentration of an analyte in a fluid, the sensor comprising a working electrode comprising an electrode material, a biorecognition layer disposed at least partially on the electrode material and comprising a biorecognition element that selectively and reversibly binds to an analyte, and an at least partially desiccated hydrogel disposed on the biorecognition layer. For example, a working electrode may be configured to generate a signal indicative of a concentration of an analyte in a fluid, the working electrode comprising an electrode material, a biorecognition element disposed on the electrode material that selectively binds to the analyte, wherein the biorecognition element is functionalized with a redox-active molecule and is configured to change conformation upon binding the analyte to move the redox-active molecule, closer to, or further from, the electrode material, and a passivation element comprising a zwitterionic peptide disposed on the electrode material.

The invention discloses a solar cell and a manufacturing method thereof, and a photovoltaic module, and relates to the field of photovoltaic technology. The solar cell includes: a semiconductor substrate having a first surface including a first region and a second region; the second area comprises an edge area and a middle area, each of the edge area and the middle area comprises a step structure recessed towards the second surface, and the step depth of the step structure of the edge area of the second area is larger than that of the step structure of the middle area of the second area; and the first doping layer is arranged on the first region, and the height of the bottom wall of the step structure in the middle region of the second region is lower than that of the first doping layer. The first passivation layer is arranged on the side, away from the semiconductor substrate, of the first doping layer and arranged on the second area. According to the embodiment of the invention, the thickness along the splitting direction is reduced, so that the splitting difficulty is reduced, meanwhile, the recombination of current carriers is reduced, and the passivation effect is improved.

A nitride-based semiconductor device includes a first and second nitride-based semiconductor layers, two or more source / drain (S / D) electrodes, a gate electrode, a doped III-V semiconductor layer, a gate protection layer and a first passivation layer. The doped III-V semiconductor layer is disposed between the second nitride-based semiconductor layer and the gate electrode. The gate protection layer caps the gate electrode and the doped III-V semiconductor layer and is separated from the S / D electrodes. The first passivation layer covers the second nitride-based semiconductor layer and the gate protection layer and abuts against sidewalls of the S / D electrodes which are separated from the gate protection layer by the first passivation layer.

The invention relates to a production method of a battery piece. The production method comprises the following steps: printing a grid line electrode on the battery piece; sintering the grid line electrode; cutting the battery piece; forming a passivation layer on the cutting edge of the battery piece; and applying voltage and laser to the battery piece so as to anneal the grid line electrode and the passivation layer. According to the application, the voltage and the laser are applied to the battery piece to anneal the grid line electrode, so that the contact resistance between the grid line electrode and the battery piece can be reduced; and the passivation layer is annealed, so that the passivation degree of the passivation layer on the cutting edge can be improved, and the photoelectric conversion efficiency of the produced battery piece is further improved. According to the method, after the passivation layer is formed on the cutting edge of the battery piece, the voltage and the laser are applied to the battery piece, a grid line electrode and the passivation layer can be annealed at the same time, the time for repeatedly arranging equipment for applying the voltage and the laser is saved, the passivation degree of the passivation layer is improved, the production time of the battery piece is shortened, and the production efficiency of the battery piece is improved. And the production efficiency of the battery piece is improved.

The invention provides a solar cell and a preparation method thereof, and a photovoltaic module, the rear surface of a semiconductor substrate is provided with a first region and a second region which are adjacent to each other, and the first region is provided with a first sub-region and first overlapping regions located at the two sides of the first sub-region; the first overlapping area is provided with a tunneling layer, a first doped conductive layer, a passivation layer, a second doped conductive layer and a first transparent conductive layer, the length of the first overlapping area in the first direction is D1, and the first direction is parallel to the surface where the semiconductor substrate is located; the rear surface of the semiconductor substrate is also provided with a third region and a fourth region which are adjacently arranged, and the third region is provided with a third sub-region and third overlapping regions located at the two sides of the third sub-region; the third overlapping region is provided with a tunneling layer, a first doped conductive layer, a passivation layer, a second doped conductive layer and a first transparent conductive layer, the length of the third overlapping region in the first direction is D2, and D1 is different from D2.

The invention discloses a solar cell and a manufacturing method thereof, and a photovoltaic module, and relates to the field of photovoltaic technology. The solar cell includes: a semiconductor substrate having a first surface including a first region and a second region adjacent to a first cut side; the second region comprises a step structure, an included angle is formed between the side wall of the step structure and the thickness direction of the semiconductor substrate, the first region is provided with a first pyramid structure, and the bottom wall of the step structure is provided with a first texture structure or a second pyramid structure; the first doping layer is arranged on the first region, and the height of the bottom wall of the step structure is lower than that of the first doping layer; the first passivation layer is arranged on one side, deviating from the semiconductor substrate, of the first doping layer and is arranged on the second region; the second passivation layer is arranged on the edge, close to the second area, of the first area, part of the second area and the first cutting side face. The passivation effect near the cutting side face is improved, carrier recombination is reduced, and the photoelectric conversion efficiency is improved.

The present disclosure belongs to the technical field of the preparation of hybrid passivated back-contact cells, and specifically relates to a short-process preparation method for a hybrid passivated back-contact cell and the use thereof. The short-process preparation method comprises: S1, texturing both surfaces of a silicon wafer; S2, subjecting the front surface of the silicon wafer to phosphorus diffusion, so as to form a third semiconductor diffusion region, wherein the process of phosphorus diffusion comprises the steps of first performing low-temperature diffusion and then performing cooling and discharging, and during the period, heating is not performed to promote diffusion; S3, removing a diffusion layer that detours to and coats the back surface and a phosphorosilicate glass layer on the front surface, which are both obtained in S2; S4, sequentially depositing a first semiconductor layer and a mask layer on the back surface obtained in S3, and subjecting same to high-temperature annealing crystallization at the same time; S5, forming a second semiconductor opening region; and S6, forming an anti-reflection layer on the front surface of the silicon wafer. In the present disclosure, a passivation effect is good, and the film density is better; moreover, defects such as film holes are effectively ameliorated, the cell conversion efficiency and the cell yield are substantially improved, and the technological process is greatly simplified, thereby greatly reducing the equipment investment cost.

The invention relates to a back contact battery, a manufacturing method thereof and a photovoltaic module. The back contact cell includes: a substrate; the first passivation contact structure and the second passivation contact structure are arranged in the first region and the second region respectively, the first passivation contact structure comprises a P-type first polycrystalline silicon doped conductive layer, and the second passivation contact structure comprises an N-type second polycrystalline silicon doped conductive layer; the first electrode and the second electrode are electrically connected to the first polycrystalline silicon doped conductive layer and the second polycrystalline silicon doped conductive layer respectively; the first area is provided with a suede structure, and at least part of the orthographic projection of the first electrode on the first surface is located in the setting area of the suede structure; or the second area is provided with a suede structure, and at least part of the orthographic projection of the second electrode on the first surface is located in the setting area of the suede structure. According to the back contact battery and the manufacturing method thereof, the contact loss of the photovoltaic module is relatively small, and the efficiency is relatively high.

The invention discloses a preparation method of a semiconductor structure and the semiconductor structure, and the preparation method comprises the steps: carrying out the etching of a substrate through employing an etching technology, so as to form a high-aspect-ratio etching structure on the substrate; after a periodic cycle step of a preset number of times of etching process is completed every time, a treatment process different from the etching process is used, and partial thickness of a passivation layer deposited on the side wall of an intermediate structure formed before the high aspect ratio etching structure is formed is removed. And removing at least part of the protruding part which exists on the side wall and is exposed from the surface of the residual passivation layer. According to the method, the etching process and the side wall processing technology are organically combined, the etching rate and the side wall quality are balanced through alternate circulation, and deep silicon etching with the higher aspect ratio and the smaller nanoscale size can be achieved.

The electrochemical mechanical polishing method and device are characterized in that a workpiece clamping device is adjusted according to the size of the semiconductor wafer and is adsorbed on a pressurizing device, and the semiconductor wafer is connected to a positive electrode of a power supply through a conducting ring to serve as an anode of an electrolysis system; the fixed abrasive pad is fixed on the polishing disc through a conductive adhesive and is connected to a power supply cathode through a conductive ring to serve as a cathode of the electrolysis system; during polishing, a polishing solution is connected with a conductive adhesive for fixing the polishing pad through a through hole in the fixed abrasive pad to form an electrolytic tank path, chemical oxidation and anodic oxidation are carried out on the surface of the third-generation semiconductor wafer during polishing to form a passivation oxide layer with low hardness, and valleys of the passivation oxide layer are passivated and protected. And the peak is quickly removed by the fixed abrasive, so that a polishing mode of anodizing and online removing the surface of the third-generation semiconductor wafer is realized. The method has the advantages of high abrasive utilization rate, high material removal rate, good surface quality, recycling of the polishing solution and the like.

The embodiment of the invention provides a solar cell and a preparation method thereof, and a photovoltaic module. In the embodiment of the invention, a first internal expansion layer with the same conduction type as a first doping layer and / or a second internal expansion layer with the same conduction type as a second doping layer are / is arranged in an interval region used for forming an isolation region on the back surface of a silicon substrate; and the first internal expansion layer and the second internal expansion layer are electrically connected, so that the field passivation effect can be realized, the recombination of minority carriers in the isolation region can be effectively reduced, reverse conduction can be realized when the battery piece is shielded, the breakdown can be avoided, and the hot spot prevention effect can be effectively realized.

The present disclosure provides a perovskite cell and a preparation method therefor, and a photovoltaic module. The perovskite cell comprises a substrate, and a perovskite layer (3) and an electron transport layer which are sequentially arranged on the substrate, wherein the electron transport layer comprises a C60 layer, and the C60 layer is arranged close to the perovskite layer, wherein the perovskite layer (3) comprises a perovskite material and 1,3-diaminopropane dihydroiodide, and / or the perovskite cell further comprises a passivation layer (4) arranged between the perovskite layer and the C60 layer, and the passivation layer (4) comprises 1,3-diaminopropane dihydroiodide.

Process condition management facilitates the combination of dry development and post-development treatment into a single process chamber; eliminating the necessity for a post-dry development bake step in a separate chamber during semiconductor manufacturing. Thermal dry development and plasma dry development may be performed in the same chamber. Thermal dry development, plasma dry development and passivation such as an O2 flash treatment; or thermal dry development, plasma dry development, passivation and hardening operations are enabled without wafer transfer.

Provided are a solar cell, a method for preparing a solar cell, and a photovoltaic module, relating to the field of photovoltaics. The solar cell includes a substrate, a dielectric layer and a doped semiconductor layer which are stacked, a passivation layer, and electrodes. The substrate has a first surface. The first surface includes an edge region and a center region. The edge region surrounds the center region. The edge region is substantially flush with or closer to the second surface than the center region. The dielectric layer is formed over the center region. The passivation layer covers the edge region and a surface of the doped semiconductor layer facing away the dielectric layer. The electrodes are located in the center region, and penetrate the passivation layer in a thickness direction to be in electrical contact with the doped semiconductor layer.